Fabrication of semiconductor device using alternating high and low temperature layers

Abstract

A method for fabricating a III-nitride semiconductor body that includes high temperature and low temperature growth steps.

Claims

1. A method of fabricating a semiconductor device, said method comprising: providing a silicon substrate; and growing a III-nitride body over a major surface of said substrate to a final thickness over a growth period of time, wherein growing said III-nitride body comprises growing at least two AlN layers including a first AlN layer and a second AlN layer grown directly on said first AlN layer, and growing a superlattice over said second AlN layer, said first AlN layer grown during a period of low temperature growth at a first temperature, said second AlN layer grown on said first AlN layer during a period of high temperature growth at a second temperature, and said superlattice grown at a constant temperature, wherein said first temperature is lower than said second temperature.

2. The method of claim 1, wherein a number of layers grown at said second temperature is equal to a number of layers grown at said first temperature.

3. The method of claim 1, further comprising forming a buffer layer over said III-nitride body.

4. The method of claim 3, further comprising forming an active layer over said buffer layer, said active layer providing an active region for fabricating a power FET.

5. The method of claim 1, wherein said second temperature is constant over said growth period of time.

6. The method of claim 1, wherein said first temperature is constant over said growth period of time.

7. The method of claim 1, wherein said period of high temperature growth is varied.

8. The method of claim 1, wherein said period of low temperature growth is varied.

9. The method of claim 1, wherein said period of high temperature growth and said period of low temperature growth are varied.

10. The method of claim 1, wherein said period of high temperature growth is equal to said period of low temperature growth.

11. The method of claim 1, wherein said period of high temperature growth is different than said period of low temperature growth.

Description

BRIEF DESCRIPTION OF THE DRAWING(S)

(1) FIGS. 1A and 1B illustrate a method according to the first embodiment of the present invention.

(2) FIGS. 2A and 2B illustrate a method according to the second embodiment of the present invention.

(3) FIGS. 3A and 3B illustrate a method according to the third embodiment of the present invention.

(4) FIGS. 4A and 4B illustrate a method according to the fourth embodiment of the present invention.

(5) FIG. 5 schematically illustrates an example of a III-nitride device fabricated according to the present invention.

DETAILED DESCRIPTION OF THE FIGURES

(6) Referring to FIGS. 1A-1B, in a process according to the first embodiment of the present invention a III-nitride super lattice body 10 (e.g. AlN body) is grown on a substrate 12 by varying the growth temperature over a growth period of time. Specifically, the growth temperature is varied in cycles, each cycle 14 including a period of high temperature growth followed by a period of low temperature growth. Thus, as illustrated in FIG. 1A graphically a III-nitride semiconductor body is grown for a first period of time 16 at a high temperature T.sub.1 (e.g. 1000 C.), and then another III-nitride body is grown for a second period of time 18 at a lower temperature T.sub.2 (e.g. 800 C.). Growth cycle 14 is then repeated until a III-nitride super lattice body of a desired thickness is obtained.

(7) It should be noted that it has been observed that the best results can be achieved if a process according to the present invention starts with a low temperature growth step first. Thus, it is preferred that a process according to the present invention starts with a low temperature growth step and then followed with other steps as explained in relation to the embodiments described below.

(8) In a method according to the first embodiment, high growth temperature T.sub.1 in all cycles are equal to one another, and low growth temperature T.sub.2 in all cycles are equal to one another. Note that first period of time 16 in all cycles may be equal to one another and even equal to second period of time 18 in all cycles. Similarly, second period of time in all cycles 14 may be equal to one another. First and second periods of time 16, 18 may also be varied as desired.

(9) Referring to FIGS. 2A and 2B, in a method according to the second embodiment of the present invention, high growth temperature T.sub.1 in all cycles 14 are equal, while low growth temperatures T.sub.2, T.sub.3, T.sub.4, . . . T.sub.N (N=an integer representing the last III-nitride body formed during a low temperature growth step) are different from one another. Preferably, low growth temperatures start from a low value (T.sub.1) and are increased in each step to a higher temperature.

(10) Referring now to FIGS. 3A and 3B, in a method according to the third embodiment of the present invention, high growth temperature and low growth temperature in each cycle is varied, whereby preferably the two growth temperatures converge with every cycle. Thus, in the first cycle T.sub.1 is the high growth temperature while T.sub.2 is the low growth temperature. In the next cycle T.sub.3 is the high growth temperature and T.sub.4 is the low growth temperature. The cycles are repeated until T.sub.X (last high growth temperature) and T.sub.Y (last low growth temperature are reached). To converge the two growth temperatures the high growth temperature is lowered while the low growth temperature is increased in each cycle. Thus, T.sub.1>T.sub.3 while T.sub.2<T.sub.4 until preferably a final growth temperature T.sub.f is reached after reaching T.sub.X and T.sub.Y.

(11) Referring now to FIGS. 4A and 4B, in a method according to the fourth embodiment of the present invention, the growth temperature is varied continuously until a desired thickness is obtained. For example, the growth temperature can start from a high value and descend continuously to a low value (curve 20) or start from a low growth temperature and ascend to a high value (curve 22).

(12) Referring to FIG. 5, a III-nitride device can be formed over a III-nitride super lattice that is formed according to the present invention. For example, a device can be formed over a III-nitride super lattice 10 that is formed according to the third embodiment of the present invention (or other embodiments) as illustrated in FIG. 5. Such a III-nitride device may include a III-nitride transition layer (or layers) 24, a III-nitride buffer layer 26, and a III-nitride active layer 28 which may constitute the active region for a high electron mobility transistor (HEMT). It should be noted that a device according to the present invention is not limited to a HEMT. Other devices such as III-nitride MISFETs, MISHFETs, HEMFETs, HJFET or the like may also be formed on a III-nitride super lattice 10 formed according to the present invention.

(13) Furthermore, it should be noted that in a process according to the present invention the alloy composition can be changed as the temperature is varied. Thus, for example, the alloy composition of one III-nitride semiconductor body grown at a high temperature can be different from the alloy composition of another III-nitride body grown at a low temperature. In another variation, the alloy composition in the body of a III-nitride body grown at high temperature or low temperature can be varied as well; i.e. a III-nitride body can have a varying alloy composition.

(14) In a method according to the present invention substrate 12 may be composed of silicon, sapphire, a III-nitride substrate such as a GaN substrate, silicon carbide or the like. Silicon, however, is a preferred substrate for economic reasons.

(15) Although the present invention has been described in relation to particular embodiments thereof, many other variations and modifications and other uses will become apparent to those skilled in the art. It is preferred, therefore, that the present invention be limited not by the specific disclosure herein, but only by the appended claims.