Splitter

Abstract

In a splitter, a first duplexer including a first transmit filter and a first receive filter at a first antenna terminal and a second duplexer including a second transmit filter and a second receive filter at a second antenna terminal are connected to each other. A second transmit band of the second transmit filter and a second receive band of the second receive filter are positioned in a frequency range between a first transmit band of the first transmit filter and a first receive band of the first receive filter. Each of the second transmit filter and the second receive filter of the second duplexer includes an elastic wave filter. The elastic wave filter includes a high acoustic velocity film defining a high acoustic velocity member, a low acoustic velocity film through which transversal waves propagate at a lower velocity than those propagating through the high acoustic velocity film, a piezoelectric film disposed on the low acoustic velocity film, and IDT electrodes disposed on the piezoelectric film, which are stacked on each other in this order.

Claims

1. A splitter comprising: a first duplexer including a first antenna terminal connected to an antenna, a first transmit filter connected to the first antenna terminal and including a first transmit band, and a first receive filter including a first receive band; and a second duplexer including a second antenna terminal connected to the antenna, a second transmit filter connected to the second antenna terminal and including a second transmit band, and a second receive filter including a second receive band; wherein the second transmit band and the second receive band are in a frequency range between the first transmit band and the first receive band; and each of the second transmit filter and the second receive filter of the second duplexer includes an elastic wave filter, and the elastic wave filter includes a high acoustic velocity member through which bulk waves propagate at a higher acoustic velocity than elastic waves propagating through a piezoelectric film, a low acoustic velocity film which is stacked on top of the high acoustic velocity member and through which bulk waves propagate at a lower acoustic velocity than bulk waves propagating through the piezoelectric film, the piezoelectric film stacked on top of the low acoustic velocity film, and an IDT electrode stacked on top of the piezoelectric film.

2. The splitter according to claim 1, wherein the high acoustic velocity member is a high acoustic velocity film; and the splitter further comprises a support substrate on top of which the high acoustic velocity film is stacked.

3. The splitter according to claim 1, wherein the high acoustic velocity member is a high acoustic velocity support substrate.

4. The splitter according to claim 1, wherein, when a frequency difference between the first transmit band and the second transmit band is represented by f1 and when a frequency difference between the second receive band and the first receive band is represented by f2, f1 is greater than about 1% of a lower limit frequency of the second transmit band, and f2 is greater than about 1% of an upper limit frequency of the second receive band.

5. The splitter according to claim 1, wherein the first and second transmit filters are ladder circuit filters, and the first and second receive filters are longitudinally coupled resonator-type elastic wave filters.

6. The splitter according to claim 1, wherein the first duplexer is a Band4 duplexer, and the second duplexer is a Band25 duplexer.

7. The splitter according to claim 1, further comprising an impedance matching circuit that connects the first and second duplexers to the antenna.

8. The splitter according to claim 1, wherein the splitter is operational in two communication systems and performs transmission and reception simultaneously in the two communication systems.

9. The splitter according to claim 1, wherein the first and second duplexers include surface acoustic wave devices.

10. The splitter according to claim 1, wherein the second transmit filter is a ladder filter including a plurality of surface acoustic wave resonators.

11. The splitter according to claim 1, wherein the second receive filter includes a 5-IDT longitudinally coupled resonator-type elastic wave filter.

12. The splitter according to claim 1, wherein the second duplexer includes a multilayer substrate including a low acoustic velocity film and a high acoustic velocity film stacked on each other under a piezoelectric film in this order from a top to bottom direction.

13. The splitter according to claim 1, wherein a protective film is provided to cover the IDT electrode.

14. The splitter according to claim 1, wherein first transmit filter is a ladder filter including a plurality of series arm resonators.

15. The splitter according to claim 1, wherein the first transmit filter includes first and second longitudinally coupled resonator-type elastic wave filters.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 is a schematic sectional view illustrating the structure of a second duplexer of a splitter according to a preferred embodiment of the present invention.

(2) FIG. 2 is a block diagram of a splitter according to a preferred embodiment of the present invention.

(3) FIG. 3 is a circuit diagram illustrating a second duplexer of a splitter according to a preferred embodiment of the present invention.

(4) FIG. 4 is a circuit diagram illustrating a first duplexer of a splitter according to a preferred embodiment of the present invention.

(5) FIG. 5 is a graph illustrating attenuation frequency characteristics of first transmit filters of first duplexers in an example and in a comparative example.

(6) FIG. 6 is a graph illustrating attenuation frequency characteristics of first receive filters of first duplexers in the example and in the comparative example.

(7) FIG. 7 is a Smith chart illustrating the impedance at an antenna terminal of a second duplexer of a splitter according to a preferred embodiment of the present invention.

(8) FIG. 8 is a Smith chart illustrating the impedance at the antenna terminal of a second duplexer of a splitter of a comparative example.

(9) FIG. 9 is a graph illustrating the relationship between the frequency and the reflection coefficient of a second transmit filter of a splitter according to a preferred embodiment of the present invention.

(10) FIG. 10 is a graph illustrating the relationship between the frequency and the reflection coefficient of a second receive filter of a splitter according to a preferred embodiment of the present invention.

(11) FIG. 11 is a schematic sectional view illustrating the structure of a second duplexer of a splitter according to another preferred embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

(12) The present invention will be clarified with reference to the drawings through illustration of specific preferred embodiments of the present invention.

(13) FIG. 2 is a block diagram of a splitter according to a preferred embodiment of the present invention. A splitter 1 includes an antenna terminal 3 connected to an antenna 2. First and second duplexers 11 and 12 are connected to the antenna terminal 3 via an impedance matching circuit 4. The impedance matching circuit 4 is preferably defined by a known circuit that performs impedance matching. The impedance matching circuit 4 is not an essential component in the splitter 1 according to a preferred embodiment of the present invention.

(14) In this preferred embodiment, the splitter 1 preferably is used in two communication systems, Band4 and Band25, for example. That is, the splitter 1 is able to perform transmission or reception at the same time in these two communication systems.

(15) The first duplexer 11 is a Band4 duplexer, while the second duplexer 12 is a Band25 duplexer. The transmit band of Band4, that is, a first transmit band, is 1710 MHz to 1755 MHz, while the receive band of Band4, that is, a first receive band, is 2110 MHz to 2155 MHz. The transmit band of Band25, that is, a second transmit band, is 1850 MHz to 1915 MHz, while the receive band of Band25, that is, a second receive band, is 1930 MHz to 1995 MHz.

(16) Accordingly, the second transmit band and the second receive band are positioned between the first transmit band and the first receive band.

(17) When the frequency difference between the first transmit band and the second transmit band is represented by f1 and when the frequency difference between the second receive band and the first receive band is represented by f2, f1=95 MHz and f2=115 MHz in this preferred embodiment.

(18) As shown in FIG. 2, the first duplexer 11 includes a first transmit terminal 11a and a first receive terminal 11b. Similarly, the second duplexer 12 includes a second transmit terminal 12a and a second receive terminal 12b. In a known splitter that achieves transmission or reception at the same time in Band4 and Band25, there is a problem in that a considerable loss occurs in a Band4 duplexer, that is, in a first duplexer having a first transmit band and a first receive band. In contrast, in the splitter 1 of this preferred embodiment, it is possible to significantly reduce the loss in the first duplexer 11. This will be clarified through a detailed explanation of the configurations of the first and second duplexers 11 and 12.

(19) In this preferred embodiment, the first and second duplexers 11 and 12 include surface acoustic wave devices.

(20) FIG. 3 is a circuit diagram of the second duplexer 12. The second duplexer 12 includes a common connecting terminal 12c, which defines and functions as a second antenna terminal, and the above-described second transmit terminal 12a and second receive terminal 12b. A second transmit filter 13 is connected between the common connecting terminal 12c and the second transmit terminal 12a.

(21) The second transmit filter 13 is a ladder filter including a plurality of surface acoustic wave resonators. More specifically, series arm resonators S1a through S1c, S2a and S2b, S3a through S3c, S4, and S5a through S5c are connected to each other in a direction from the common connecting terminal 12c to the second transmit terminal 12a.

(22) A parallel arm resonator P1 is connected between a node between the series arm resonators S1c and S2a and a ground potential. A parallel arm resonator P2 is connected between a node between the series arm resonators S2b and S3a and the ground potential. Parallel arm resonators P3a and P3b connected in series with each other are disposed between a node between the series arm resonators S3c and S4 and the ground potential. An end portion of the parallel arm resonator P1 closer to the ground potential, an end portion of the parallel arm resonator P2 closer to the ground potential, and an end portion of the parallel arm resonator P3b closer to the ground potential are connected to a common connecting portion. Inductance L1 is connected between this common connecting portion and the ground potential. Parallel arm resonators P4a and P4b and inductance L2 connected in series with each other are connected between a node between the series arm resonators S4 and S5a and a ground potential.

(23) The series arm resonators S1a through S5c and the parallel arm resonators P1 through P4b each include a surface acoustic wave resonator.

(24) A second receive filter 14 is connected between the common connecting terminal 12c and the second receive terminal 12b. The second receive filter 14 includes a 5IDT longitudinally coupled resonator-type elastic wave filter 15. Surface acoustic wave resonators 16 and 17 are connected in series with each other between the longitudinally coupled resonator-type elastic wave filter 15 and the common connecting terminal 12c. A surface acoustic wave resonator 18 is connected between a node between the surface acoustic wave resonators 16 and 17 and a ground potential.

(25) A surface acoustic wave resonator 19 is connected between an end portion of the longitudinally coupled resonator-type elastic wave filter 15 closer to the receive terminal and a ground potential.

(26) In this preferred embodiment, the second duplexer 12 includes a substrate with a multilayer structure in which a low acoustic velocity film and a high acoustic velocity film are stacked on each other under a piezoelectric film in this order from the top to bottom direction. FIG. 1 is a sectional view schematically illustrating such a structure of a surface acoustic wave device.

(27) As shown in FIG. 1, a surface acoustic wave device 21 includes a support substrate 22. The support substrate 22 may be made of a suitable insulator or semiconductor. In this preferred embodiment, the support substrate 22 is made of Si, for example.

(28) As a high acoustic velocity member, a high acoustic velocity film 23 through which transversal waves propagate at a relatively high velocity is stacked on the support substrate 22. A low acoustic velocity film 24 is stacked on the high acoustic velocity film 23. A piezoelectric film 25 is stacked on the low acoustic velocity film 24. IDT electrodes 26 are provided on the piezoelectric film 25. These IDT electrodes 26 correspond to IDT electrodes of the above-described surface acoustic wave resonators and longitudinally coupled resonator-type elastic wave filter.

(29) In the specification, the high acoustic velocity member is a member through which bulk waves propagate at a higher acoustic velocity than elastic waves, such as surface waves and boundary waves, propagating through the piezoelectric film. The low acoustic velocity film is a film through which bulk waves propagate at a lower acoustic velocity than bulk waves propagating through the piezoelectric film.

(30) As materials for the high acoustic velocity film 23 and the low acoustic velocity film 24, suitable insulating materials that satisfy the above-described relationships concerning the acoustic velocity may be used. Examples of such insulating materials are silicon oxide, silicon nitride, silicon oxynitride, aluminum nitride, aluminum oxide, and titanium oxide. In this preferred embodiment, the high acoustic velocity film 23 is made of AlN, and the low acoustic velocity film 24 is made of SiO.sub.2, for example.

(31) The piezoelectric film 25 may be formed of a suitable piezoelectric material. Examples of such a piezoelectric material are piezoelectric monocrystal such as LiTaO.sub.3, LiNbO.sub.3, and quarts and piezoelectric ceramics such as PZT.

(32) The IDT electrodes 26 may be made of a suitable metal or alloy. Examples of such a metal and alloy are Cu, Al, Pt, Ti, W, Ag, an AgPd alloy, and an AlCu alloy. The IDT electrodes 26 may be made of a multilayer metal film including multiple metal films stacked on each other.

(33) A suitable protective film may be provided to cover the IDT electrodes 26.

(34) In the surface acoustic wave device 21, surface acoustic waves excited by the IDT electrodes 26 propagate through the piezoelectric film 25. In this case, since the low acoustic velocity film 24 and the high acoustic velocity film 23 are stacked under the piezoelectric film 25, a leakage of surface acoustic waves in the downward direction is significantly reduced or prevented. Accordingly, energy of the surface acoustic waves is effectively enclosed within the piezoelectric film 25, thus making it possible to increase the Q factor.

(35) In the splitter 1 of this preferred embodiment, since the second duplexer 12 includes the above-described surface acoustic wave device 21, the Q factor is increased in the second duplexer 12. Accordingly, concerning the frequency characteristics of the second duplexer 12, the reflectance in the first transmit band and in the first receive band is significantly improved, thus making it possible to decrease the loss in the first duplexer 11. This will be discussed in a greater detail later through illustration of experiments.

(36) FIG. 4 is a circuit diagram of the first duplexer 11. The first duplexer 11 includes a common connecting terminal 11c, which defines and functions as a second antenna terminal, and the above-described first transmit terminal 11a and first receive terminal 11b.

(37) A first transmit filter 31 is connected between the common connecting terminal 11c and the first transmit terminal 11a. The first transmit filter 31 is a ladder filter. The first transmit filter 31 includes series arm resonators S11a through S15b.

(38) Inductance L11 is connected in parallel with the series arm resonators S15a and S15b. Parallel arm resonators P11a and P11b are connected in series with each other between a node between the series arm resonators S11c and S12 and a ground potential. A parallel arm resonator P12 is connected between a node between the series arm resonators S12 and S13a and a ground potential. Parallel arm resonators P13a and P13b are connected in series with each other between a node between the series arm resonators S13b and S14a and a ground potential. Inductance L12 is connected between the ground potential and end portions of the parallel arm resonators P11b, P12, and P13b closer to the ground potential. A parallel arm resonator P14 is connected between a node between the series arm resonators S14b and S15a and a ground potential. Inductance L13 is connected between the ground potential and an end portion of the parallel arm resonator P14 closer to the ground potential.

(39) A first receive filter 32 is connected between the common connecting terminal 11c and the first receive terminal 11b. The first receive filter 32 includes first and second longitudinally coupled resonator-type elastic wave filters 33 and 34. The first and second longitudinally coupled resonator-type elastic wave filters 33 and 34 are connected in parallel with each other. Surface acoustic wave resonators 35a through 35c are connected in series with each other between the input terminals of the first and second longitudinally coupled resonator-type elastic wave filters 33 and 34 and the common connecting terminal 11c. Surface acoustic wave resonators 36a and 36b are connected in series with each other between the output terminals of the first and second longitudinally coupled resonator-type elastic wave filters 33 and 34 and a ground potential.

(40) In this preferred embodiment, the structure of the first duplexer 11 is also similar to that of the surface acoustic wave device 21 shown in FIG. 1. Accordingly, in the first duplexer 11, too, the Q factor is increased. However, the first duplexer 11 may not necessarily have the structure of the surface acoustic wave device 21. That is, the first duplexer 11 may be defined by a surface acoustic wave device of a structure without a low acoustic velocity film and a high acoustic velocity film.

(41) As discussed above, in the splitter 1 of this preferred embodiment, the reflectance in the first transmit band and in the first receive band is enhanced in the second duplexer 12, thus making it possible to decrease the loss. This will be discussed below through illustration of specific experiments.

(42) As non-limiting examples of various preferred embodiments of the present invention, the duplexers of the above-described preferred embodiment were preferably formed in the following manner.

(43) As the support substrate 22, a Si substrate having a thickness of 200 m was used. As the high acoustic velocity film 23, an AlN film having a thickness of 1345 nm was used. As the low acoustic velocity film 24, a SiO.sub.2 film having a thickness of 670 nm was used. As the piezoelectric film 25, a LiTaO.sub.3 film having a thickness of 650 nm and a cut angle of 55 was used. As the IDT electrodes 26, a multilayer metal film constituted by a Ti film having a thickness of 12 nm and an AlCu film having a thickness of 162 nm and containing 1 Cu weight % stacked on each other in this order was used. A SiO.sub.2 film having a thickness of 25 nm was formed on the IDT electrodes as a protective film.

(44) The splitter 1 including the first and second duplexers 11 and 12 provided in the above-described multilayer structure was fabricated. The specifications of the first and second duplexers 11 and 12 are as follows.

(45) Details of the series arm resonators S1a through S5c and the parallel arm resonators P1 through P4b are those indicated in Table 1.

(46) TABLE-US-00001 TABLE 1 S5a to S3a to S1a to S5c P4a, P4b S4 P3a, P3b S3c P2 S2a, S2b P1 S1c IDT wavelength 2.0249 2.1093 1.9213 2.1115 2.0224 2.113 2.0472 2.1244 2.0249 (m) Reflector ditto ditto ditto Ditto ditto ditto ditto ditto 2.0449 wavelength (m) Interdigital width 30.62 68.23 28.94 83.25 30.56 66.29 37.44 65 31.6 (m) Number of pairs 288 79 235 73 120 70 262 74 258 of electrode fingers of IDT Number of 21 21 21 21 21 21 21 21 21 electrode fingers of reflector Duty 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5

(47) The specifications of the 5IDT longitudinally coupled resonator-type elastic wave filter 15 are those indicated in Table 2 and Table 3. In Table 2, IDTc is the central IDT, IDTa and IDTe are IDTs located at both ends, IDTb is an IDT disposed between IDTa and IDTc, and IDTd is an IDT disposed between IDTc and IDTe. Moreover, main portion indicates electrode fingers other than a narrow-pitch portion, and narrow-pitch portion indicates narrow-pitch electrode fingers.

(48) TABLE-US-00002 TABLE 2 Reflector 1.9855 Wavelength (m) IDTa and IDTe main portion 1.986 IDTa and IDTe narrow-pitch portion 1.8155 IDTb and IDTd narrow-pitch portion (outer) 1.8155 IDTb and IDTd main portion 1.9355 IDTb and IDTd narrow-pitch portion (inner) 1.8605 IDTc narrow-pitch portion 1.8945 IDTc main portion 1.9765

(49) TABLE-US-00003 TABLE 3 Number of pairs of electrode fingers IDTa and IDTe main portion 20.5 IDTa and IDTe narrow-pitch portion 1.5 IDTb and IDTd narrow-pitch portion (outer) 1 IDTb and IDTd main portion 13.5 IDTb and IDTd narrow-pitch portion (inner) 3.5 IDTc narrow-pitch portion 4.5 IDTc main portion 20

(50) The number of pairs of electrode fingers, interdigital width, and duty of the surface acoustic wave resonators 16 through 19 are those indicated in Table 4.

(51) TABLE-US-00004 TABLE 4 Surface acoustic wave resonator 16 18 17 19 IDT wavelength (m) 1.917 1.917 1.917 1.9885 Reflector wavelength (m) Interdigital width (m) 28.95 28.95 28.95 60.78 Number of pairs of electrode 80 80 80 82 fingers of IDT Number of electrode fingers 29 29 29 21 of reflector Duty 0.5 0.5 0.5 0.5

(52) Details of the series arm resonators S11a through S15b and the parallel arm resonators P11a through P14 are those indicated in Table 5.

(53) TABLE-US-00005 TABLE 5 S11a S15a, S15b P14 S14a, S14b P13a, P13b S13a, S13b P12 S12 P11a, P11b to S11c IDT wavelength 2.3108 2.3349 2.236 2.3289 2.2428 2.3227 2.2295 2.3224 2.226 (m) Reflector 2.356 2.3349 2.2342 2.3381 2.3083 2.3449 2.3259 2.3341 2.3164 wavelength (m) Interdigital width 80.7 41.9 55.2 41.8 50.9 33.1 46.2 70.3 52.9 (m) Number of pairs 154 129 114 149 146 100 141 77 166 of electrode fingers of IDT Number of electrode 14 18 14 18 14 18 14 18 14 fingers of reflector Duty 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5

(54) Details of the first and second longitudinally coupled resonator-type elastic wave filters 33 and 34 are those indicated in Table 6 and Table 7.

(55) TABLE-US-00006 TABLE 6 Reflector 1.8926 Wavelength (m) Main portions of IDTs at both ends 1.8702 Narrow-pitch portions of IDTs at both ends 1.7737 Narrow-pitch portion of central IDT 1.7651 Main portion of central IDT 1.8742

(56) TABLE-US-00007 TABLE 7 Number of pairs of electrode fingers Main portions of IDTs at both ends 19 Narrow-pitch portions of IDTs at both ends 2.5 Narrow-pitch portion of central IDT 3 Main portion of central IDT 24

(57) Details of the surface acoustic wave resonators 35a through 35c, 36a, and 36b are those indicated in Table 8.

(58) TABLE-US-00008 TABLE 8 Surface acoustic wave resonator 35a to 35c 36a, 36b IDT wavelength (m) 1.8378 1.9049 Reflector wavelength (m) Interdigital width (m) 30 61 Number of pairs of electrode fingers of IDT 180 110 Number of electrode fingers of reflector 58 38 Duty 0.5 0.5

(59) For comparison, a splitter of a comparative example was fabricated in a manner similar to the above-described example, except that surface acoustic wave devices without the above-described high acoustic velocity film and low acoustic velocity film were used. That is, as the multilayer structure of the surface acoustic wave devices, a LiTaO.sub.3 film having a thickness of 600 nm and a cut angle of 55 was stacked on a support substrate, and then, IDT electrodes were formed on the LiTaO.sub.3 film in a manner similar to the above-described example.

(60) In FIGS. 5 and 6, the solid line indicates the result of the example, while the broken line indicates the result of the comparative example. FIG. 5 illustrates attenuation frequency characteristics of the first transmit filter of the first duplexer. FIG. 6 illustrates attenuation frequency characteristics of the first receive filter of the first duplexer.

(61) As is seen from FIGS. 5 and 6, the insertion loss in the first transmit band and in the first receive band is reduced to a smaller level in the example than in the comparative example. In particular, the insertion loss in the transmit band is effectively reduced. The reason for this may be that the reflectance in the first transmit band and in the first receive band is enhanced in the second duplexer 12. This will be explained below with reference to FIGS. 7 and 8.

(62) FIG. 7 is a Smith chart illustrating the impedance at the antenna terminal of the second duplexer in the above-described example. FIG. 8 is a Smith chart illustrating the impedance at the antenna terminal of the second duplexer in the splitter of the above-described comparative example.

(63) In FIGS. 7 and 8, markers M1, M2, M3, and M4 indicate the positions of 1710 MHz, 1755 MHz, 2110 MHz, and 2155 MHz, respectively. That is, the transmit band of Band4, that is, the first transmit band, is located between marker M1 and marker M2, while the first receive band, that is, the receive band of Band4, is located between marker M3 and marker M4.

(64) Upon comparing FIG. 7 with FIG. 8, it is clearly seen that, in the above-described example in comparison with the comparative example, both in the first receive band and in the first transmit band, the curves in the impedance Smith chart are close to the outer peripheral edge, and thus, the reflectance approximates to 1. That is, in the above-described example in comparison with the comparative example, the reflectance in the first transmit band and in the first receive band is enhanced in the second duplexer. Accordingly, signals in the first transmit band and in the first receive band are unlikely to enter the second duplexer 12. Because of this reason, loss is effectively reduced in the transmission characteristics and reception characteristics of the first duplexer 11, as shown in FIGS. 5 and 6.

(65) In the above-described example, since the second duplexer 12 has the multilayer structure shown in FIG. 1, as discussed above, the Q factor is increased, and because of this reason, the reflectance in the first transmit band and in the first receive band is enhanced.

(66) Accordingly, in this preferred embodiment, the loss in the first transmit band and in the first receive band of the first duplexer 11 is effectively reduced. It is thus possible to considerably reduce the loss in the splitter 1 which supports Band25 and Band4 whose f1 and f2 are small, in comparison with a known splitter.

(67) The problem with an increase in the loss in the first duplexer 11 as discussed above is particularly noticeable when f1 and f2 are small, that is, when the differences in the pass band between the first duplexer and the second duplexer are small. If there are great differences in the pass band between the first duplexer and the second duplexer, the reflectance approximates to 1.

(68) Preferably, f1 is greater than about 1% of the lower limit frequency of the second transmit band, and f2 is greater than about 1% of the upper limit frequency of the second receive band. This will be explained below with reference to FIGS. 9 and 10.

(69) FIG. 9 is a graph illustrating the relationship between the frequency and the reflection coefficient obtained from the impedance Smith chart of the second duplexer in the above-described preferred embodiment. In the above-described comparative example, the maximum reflection coefficient in 1650 to 1850 MHz is 0.83. In contrast, as is seen from FIG. 9, in the above-described preferred embodiment, the reflection coefficient is increased to 0.83 or higher in the frequency range of 1830 MHz and lower. Accordingly, at the frequency lower than 1830 MHz, the reflection coefficient can be increased to a higher level than in the comparative example. The lower limit frequency of the second transmit band is 1850 MHz. Thus, if f1 is set to be greater than {(18501830)/1850}100(%)=1.08(%) of the lower limit frequency of the second transmit band, the loss may be reduced even more effectively.

(70) FIG. 10 is a graph also illustrating the relationship between the frequency and the reflection coefficient obtained from the impedance Smith chart of the second duplexer in the above-described preferred embodiment. In the comparative example, the maximum reflection coefficient in a higher frequency range of 1950 MHz to 2200 MHz is 0.89. As is seen from FIG. 10, in the example, the reflection coefficient at 2015 MHz is 0.89. Thus, if f2 is set to be greater than {(20151995)/1995}100(%)=1.00(%) of the upper limit frequency of the second receive band, the reflection coefficient is able to be increased to about 0.89 or greater. Accordingly, by setting f2 to be greater than about 1% of the upper limit frequency of the second receive band, the loss in the higher frequency range is reduced even more effectively.

(71) The upper limits of f1 and f2 are not restricted technically. However, if various communication standards are considered, it is desirable that the upper limits of f1 and f2 be about 50% of the lower limit frequency of the second transmit band and the upper limit frequency of the second receive band, respectively.

(72) In the above-described preferred embodiment, the high acoustic velocity film 23, which defines and functions as a high acoustic velocity member, is stacked on the support substrate 22, as shown in FIG. 1. Instead of this structure, a high acoustic velocity support substrate 23A, which defines and functions as a high acoustic velocity member, may be used, as shown in FIG. 11. In this case, the support substrate 22 may be omitted. Regarding the material for the high acoustic velocity support substrate 23A, a material similar to that used for the high acoustic velocity film 23 may be used.

(73) A surface acoustic wave device 41 shown in FIG. 11 is similar to the surface acoustic wave device 21 shown in FIG. 1, except that the high acoustic velocity support substrate 23A is used.

(74) In the above-described preferred embodiment, the first and second transmit filters are ladder circuit filters, and the first and second receive filters are longitudinally coupled resonator-type elastic wave filters. However, the circuit configurations of the transmit filters and the receive filters are not restricted to these configurations. The transmit filters and the receive filters may include elastic wave filters of various circuit configurations using elastic waves. Moreover, instead of surface acoustic waves, boundary acoustic waves may be used.

(75) The transmit bands and the receive bands of the first and second duplexers are not restricted to Band4 and Band25, as discussed above. It is possible to provide a splitter which supports various multiple bands according to various preferred embodiments of the present invention.

(76) While preferred embodiments of the present invention have been described above, it is to be understood that variations and modifications will be apparent to those skilled in the art without departing from the scope and spirit of the present invention. The scope of the present invention, therefore, is to be determined solely by the following claims.