Production process for device

Abstract

A production process for a device in which a first substrate and a second substrate are bonded to each other with bonding surfaces thereof mutually bonded and the second substrate has a through-hole, the production process including the steps of bonding the first substrate and the second substrate to each other with the presence of a non-bonding region formed by a recessed shape portion recessed from at least one of the bonding surface of the first substrate and the bonding surface of the second substrate; and causing at least a part of a portion of the second substrate corresponding to the non-bonding region to pass through.

Claims

1. A production process for a device in which a first substrate and a second substrate are bonded to each other with bonding surfaces thereof mutually bonded and which includes an electrode PAD on the first substrate, the production process comprising: bonding the first substrate and the second substrate to each other such that a non-bonding region is formed by a recessed shape portion recessed from at least one of the bonding surface of the first substrate and the bonding surface of the second substrate, and the electrode PAD is arranged in the non-bonding region; and removing, after the bonding of the first substrate and the second substrate, all parts of a portion of the second substrate corresponding to the non-bonding region so as to expose the electrode PAD on the first substrate.

2. The production process for the device according to claim 1, further comprising forming the recessed shape portion on the bonding surface of the first substrate.

3. The production process for the device according to claim 1, further comprising forming the recessed shape portion on the bonding surface of the second substrate.

4. A production process for a device in which a first substrate and a second substrate are bonded to each other with bonding surfaces thereof mutually bonded, the production process comprising: bonding the first substrate and the second substrate to each other such that a non-bonding region is formed by a recessed shape portion recessed from at least one of the bonding surface of the first substrate and the bonding surface of the second substrate; and removing, after the bonding of the first substrate and the second substrate, at least a part of a portion of the second substrate corresponding to the non-bonding region so as to form an opening that passes through the second substrate, wherein the recessed shape portion is formed on the bonding surfaces of both of the first substrate and the second substrate.

5. The production process for the device according to claim 1, wherein: a plurality of devices are formed in a bonded substrate obtained by bonding the first substrate and the second substrate to each other, and the process comprises cutting and dividing the bonded substrate into a plurality of chips of the devices, after the removing of the at least the part of the portion of the second substrate.

6. The production process for the device according to claim 1, wherein: a structure is formed on a surface of the first substrate, in the bonding of the first substrate and the second substrate, the first substrate and the second substrate overlap each other such that at least a surface of the structure and the second substrate do not come into contact with each other, and in the removing of the at least the part of the portion of the second substrate, the surface of the structure is exposed via the opening.

7. The production process for the device according to claim 1, wherein the second substrate has another recess, which forms a flow channel.

8. A production process for a device in which a first substrate and a second substrate are bonded to each other with bonding surfaces thereof mutually bonded, the production process comprising: bonding the first substrate and the second substrate to each other such that a non-bonding region is formed by a recessed shape portion recessed from at least one of the bonding surface of the first substrate and the bonding surface of the second substrate; and removing by dicing, after the bonding of the first substrate and the second substrate, at least a part of a portion of the second substrate corresponding to the non-bonding region so as to expose the surface of the first substrate.

9. The production process for the device according to claim 8, further comprising forming the recessed shape portion on the bonding surface of the first substrate.

10. The production process for the device according to claim 8, further comprising forming the recessed shape portion on the bonding surface of the second substrate.

11. The production process for the device according to claim 8, wherein: a plurality of devices are formed in a bonded substrate obtained by bonding the first substrate and the second substrate to each other, and the process comprises cutting and dividing the bonded substrate into a plurality of chips of the devices, after the removing of the at least the part of the portion of the second substrate.

12. The production process for the device according to claim 8, wherein: a structure is formed on a surface of the first substrate, in the bonding of the first substrate and the second substrate, the first substrate and the second substrate overlap each other such that at least a surface of the structure and the second substrate do not come into contact with each other, and in the removing of the at least the part of the portion of the second substrate, the surface of the structure is exposed via the opening.

13. The production process for the device according to claim 8, wherein the removing is conducted for all parts of the portion of the second substrate corresponding to the non-bonding region.

14. The production process for the device according to claim 8, wherein the second substrate has another recess, which forms a flow channel.

15. A production process for a device in which a first substrate and a second substrate are bonded to each other with bonding surfaces thereof mutually bonded and which includes an electrode PAD on the first substrate, the production process comprising: bonding the first substrate and the second substrate to each other such that a non-bonding region is formed by a recessed shape portion recessed from at least one of the bonding surface of the first substrate and the bonding surface of the second substrate, and the electrode PAD is arranged in the non-bonding region; and removing, after the bonding of the first substrate and the second substrate, at least a part of a portion of the second substrate corresponding to the non-bonding region so as to expose the electrode PAD on the first substrate, wherein the second substrate has another recess, which forms a flow channel.

16. The production process for the device according to claim 15, further comprising forming the recessed shape portion on the bonding surface of the first substrate.

17. The production process for the device according to claim 15, further comprising forming the recessed shape portion on the bonding surface of the second substrate.

18. The production process for the device according to claim 15, wherein: a plurality of devices are formed in a bonded substrate obtained by bonding the first substrate and the second substrate to each other, and the process comprises cutting and dividing the bonded substrate into a plurality of chips of the devices, after the removing of the at least the part of the portion of the second substrate.

19. The production process for the device according to claim 15, wherein: a structure is formed on a surface of the first substrate, in the bonding of the first substrate and the second substrate, the first substrate and the second substrate overlap each other such that at least a surface of the structure and the second substrate do not come into contact with each other, and in the removing of the at least the part of the portion of the second substrate, the surface of the structure is exposed via the opening.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIGS. 1A1, 1A2, 1B1, 1B2, 1C1 and 1C2 are schematic views of conventional production steps.

(2) FIGS. 2A and 2B are schematic views of a case where no non-bonding region is provided and a case where the non-bonding region is provided.

(3) FIGS. 3A1, 3A2, 3B1, 3B2, 3C1, 3C2, 3D1, 3D2, 3E1 and 3E2 are schematic views of a production process of the present invention.

(4) FIGS. 4A and 4B are process flows of steps in a conventional technique and steps in the present invention.

(5) FIGS. 5A, 5B, 5C, 5D, 5E and 5F are schematic views of Example 1.

(6) FIG. 6 is a process flow of Example 1.

(7) FIGS. 7A, 7B, 7C, 7D and 7E are schematic views of Example 2.

(8) FIG. 8 is a process flow of Example 2.

(9) FIGS. 9A, 9B, 9C, 9D and 9E are schematic views of Example 3.

(10) FIG. 10 is a process flow of Example 3.

DESCRIPTION OF THE EMBODIMENTS

(11) Preferred embodiments of the present invention will now be described in detail in accordance with the accompanying drawings.

(12) A production process for a device in the present invention is a production process for a device in which a first substrate and a second substrate are bonded to each other with bonding surfaces thereof mutually bonded and the second substrate has a through-hole, the production process including the steps of bonding the first substrate and the second substrate to each other with the presence of a non-bonding region formed by a recessed shape portion recessed from at least one of the bonding surface of the first substrate and the bonding surface of the second substrate; and causing at least a part of a portion of the second substrate corresponding the non-bonding region to pass through.

(13) In a production process in an embodiment of the present invention, a recessed portion is formed in a part of two substrates to provide a non-bonding region between the substrates after bonding. After the bonding, that portion corresponding to the non-bonding region of the substrate which faces an electrode PAD is removed to expose an electrode PAD portion. FIG. 2A is a schematic view of a case where no non-bonding region is provided, and FIG. 2B is a schematic view of a case where a non-bonding region is provided. In the case where no non-bonding region 18 is provided (FIG. 2A), an electrode portion 14 and an unnecessary portion 19 to be removed after the bonding are bonded to each other, and the unnecessary portion 19 cannot be removed. In the case where the non-bonding region 18 is provided (FIG. 2B), since the non-bonding region 18 is present between the electrode portion 14 and the unnecessary portion 19 to be removed after the bonding, the electrode portion 14 and the unnecessary portion 19 are not bonded to each other. Accordingly, it is possible to remove the unnecessary portion 19 by machining to form an opening.

(14) In the configuration of the present invention described above, there is no need to form an opening in a substrate to be a cover before the bonding, and the rigidity of the substrate is thereby secured. This solves the problem of the substrate being broken when the substrate is held, conveyed, or transferred, and allows chips to be arranged even at a substrate end, thereby increasing the number of chips which can be obtained from the substrate.

(15) FIGS. 3A1 to 3E2 are schematic views of steps in the present invention. Multiple electrode PADS 14 are arranged as structures on a bonding surface of an electrode substrate 11 (first substrate) (FIGS. 3A1 and 3A2), and a recessed shape portion 10 to be the non-bonding region 18 is formed in a portion on a bonding surface of a substrate 17 (second substrate) to be a cover, the portion corresponding to a through-hole to be formed later (FIGS. 3B1 and 3B2).

(16) The material of the electrode substrate 11 and the substrate 17 to be the cover is selected from materials which have resistance to temperature at which the device is used and to samples and chemicals used in the device and have no contamination effects and which are suitable for usage conditions such as optical characteristics. For example, when used at high temperature, the material of the electrode substrate 11 and the substrate 17 can be selected from materials such as glass, silicon, and metal. When corrosion resistance, alkali resistance, and acid resistance need to be secured, the material of the electrode substrate and the substrate 17 is preferably selected from glass and silicon. Moreover, when the temperature is not high, a resin material can be selected.

(17) A material with low specific resistance is used as the material of the electrode PAD 14, and, for example, metal such as gold or aluminum is used.

(18) The electrode substrate 11 and the substrate 17 to be the cover are bonded to each other with the presence of the non-bonding region 18 formed by the recessed shape portion 10, and the bonded substrate 20 is thereby formed (FIGS. 3C1 and 3C2). Thermal bonding, room temperature bonding, anode bonding, or the like is used as a bonding method, depending on the substrate material. In FIGS. 3A1 to 3E2, the recessed shape portion 10 is formed in the substrate 17 to be the cover. However, the recessed shape portion recessed from the bonding surface may be formed in one of the electrode substrate 11 and the substrate 17 to be the cover or in both substrates to form the non-bonding region 18 between the electrode PAD 14 and the substrate 17 to be the cover. The recessed shape portion can be formed by using dry etching, wet etching, or machining methods such as dicing, laser machining, milling, or blasting, and the formation method is not limited to these methods. An upper portion corresponding to the non-bonding region 18 is the unnecessary portion 19 which needs to be removed to expose the electrode (FIGS. 3D1 and 3D2).

(19) Next, an electrode opening is formed by machining the substrate 17 to be the cover and thereby removing the unnecessary portion 19, and thus at least a part of a portion corresponding to the non-bonding region 18 is caused to pass through (FIGS. 3E1 and 3E2). A machining method such as dicing, laser machining, milling, or blasting is used for the machining of the unnecessary portion 19. Alternatively, the removal can be performed by using a method such as dry etching, wet etching, or ion milling, depending on the material of the substrate 17 to be the cover. Multiple devices each having a configuration in which the structure (electrode PAD 14) is open to the outside are thus formed in the bonded substrate 20 in which the electrode openings are formed as described above, and the bonded substrate 20 can be cut and divided into multiple chips by being subjected to dicing or laser machining.

(20) FIG. 4A illustrates a conventional production process flow, and FIG. 4B illustrates a production process flow of the present invention. In the conventional process, a substrate in which an opening is formed prior to bonding of substrates is attached to an electrode substrate, and a device is thereby formed. However, the present invention is characterized in that the machining for forming the opening for the required portion is performed after the bonding of the substrates. Although the embodiment is described by giving the example in which the opening for the electrode PAD portion is formed for external electrical connection, the purpose of forming the opening is not limited to this. The method described herein can expose a part of the bonded substrate by forming an opening, and is effective also for such a structure as a MEMS device in which mechanical access from the outside is necessary and for a structure in which optical access is necessary for observation from the outside, and the like

Example 1

(21) An example of a microfluidic device is given below to describe the present invention more specifically. Schematic views of Example 1 are illustrated in FIGS. 5A to 5F.

(22) Electrode Substrate

(23) A substrate in which an electrode 22 and a SiO.sub.2 passivation film 23 are formed on a synthetic quartz substrate 27 with a thickness of 0.7 mm is used as an electrode substrate 21 (FIG. 5A).

(24) Substrate to be Cover

(25) A synthetic quartz substrate with a thickness of 0.7 mm is used as a substrate 24 to be a cover. A recessed shape portion 26 to be a non-bonding region 25 is formed in a portion where an electrode opening is to be formed after bonding, to have a depth of 20 m (FIG. 5B). In the case of forming a flow channel in the substrate 24 to be the cover, the flow channel and the non-bonding region 25 can be formed simultaneously.

(26) Bonding of Substrates

(27) Bonding surfaces of the electrode substrate 21 and the substrate 24 to be the cover are activated by an ion gun in vacuum, and the electrode substrate 21 and the substrate 24 to be the cover are bonded to each other by applying pressure thereto while being aligned such that the electrode 22 and the non-bonding region 25 overlap with each other (FIG. 5C).

(28) Machining of Opening

(29) The substrate 24 to be the cover on the non-bonding region 25 is removed by dicing to form a through-hole in the substrate 24 with a cut depth of a dicing blade adjusted to such a height that the dicing blade reaches the non-bonding region 25 but does not reach the passivation film 23 (FIG. 5D), and an opening is thereby formed (FIG. 5E).

(30) Passivation Film Removal

(31) The passivation film 23 is removed by dry etching to expose the electrode 22 covered with the passivation film 23 (FIG. 5F).

(32) FIG. 6 illustrates a flow in Example 1.

(33) Example 1 is an example in which the non-bonding region 25 is provided in the substrate 24 to be the cover.

Example 2

(34) Example 2 is described below. FIGS. 7A to 7E are schematic views of Example 2.

(35) Electrode Substrate

(36) A substrate in which a gold electrode 22 and a SiO.sub.2 passivation film 23 are formed on a synthetic quartz substrate 27 with a thickness of 0.7 mm is used as an electrode substrate 21. A recessed shape portion 26 is formed before bonding by removing the passivation film 23 on the gold electrode 22 by dry etching (FIG. 7A). A portion where the passivation film 23 is removed serves as the non-bonding region 25 after the bonding. As illustrated in FIGS. 7A to 7E, the gold electrode 22 is formed in the electrode substrate 21 to be recessed from a bonding surface (on the side of the passivation film 23).

(37) Substrate to be Cover

(38) A synthetic quartz substrate with a thickness of 0.7 mm is used as a substrate 24 to be a cover (FIG. 7B). In the case of forming a flow channel in the substrate 24 to be the cover, only the flow channel is formed.

(39) Bonding of Substrates

(40) The electrode substrate 21 and the substrate 24 to be the cover are activated by an ion gun and are bonded to each other as in Example 1 (FIG. 7C).

(41) Machining of Opening

(42) A portion of the substrate 24 to be the cover above the non-bonding region 25 is removed by dicing to form a through-hole in the substrate 24 with a cut depth of a dicing blade adjusted to such a height that the dicing blade reaches the non-bonding region 25 but does not reach the gold electrode 22 (FIG. 7D), and an opening is thereby formed (FIG. 7E).

(43) FIG. 8 illustrates a flowchart of Example 2. Example 2 is an example in which the non-bonding region 25 is provided by removing the passivation film 23 of the electrode substrate 21.

Example 3

(44) Example 3 is described below. FIGS. 9A to 9E are schematic views of Example 3.

(45) Electrode Substrate

(46) A substrate in which a gold electrode 22 and a SiO.sub.2 passivation film 23 are formed on a synthetic quartz substrate 27 with a thickness of 0.7 mm is used as an electrode substrate 21. A recessed shape portion 26 is formed by removing the passivation film 23 on the gold electrode 22 by dry etching (FIG. 9A). A portion where the passivation film 23 is removed serves as the non-bonding region 25 after the bonding. As illustrated in FIGS. 9A to 9E, the gold electrode 22 is formed in the electrode substrate 21 to be recessed from a bonding surface (on the side of the passivation film 23).

(47) Substrate to be Cover

(48) A synthetic quartz substrate with a thickness of 0.7 mm is used as a substrate 24 to be a cover. A recessed shape portion 26 to be the non-bonding region 25 is formed in a portion where an electrode opening is to be formed after the bonding (FIG. 9B). In the case of forming a flow channel in the substrate 24 to be the cover, the flow channel and the non-bonding region 25 can be formed simultaneously.

(49) Bonding of Substrates

(50) The electrode substrate 21 and the substrate 24 to be the cover are activated by an ion gun and are bonded to each other. In this case, the electrode substrate 21 and the substrate 24 to be the cover are bonded to each other while being aligned such that an electrode 22 and the non-bonding region 25 overlap with each other (FIG. 9C).

(51) Machining of Opening

(52) An unnecessary portion of the substrate 24 to be the cover above the non-bonding region 25 is removed by dicing to form a through-hole in the substrate 24 with a cut depth of a dicing blade adjusted to such a height that the dicing blade reaches the non-bonding region 25 but does not reach the gold electrode 22 (FIG. 9D), and an opening is thereby formed (FIG. 9E).

(53) FIG. 10 illustrates a flowchart of Example 3. Example 3 is an example in which the non-bonding region 25 is provided in both of the electrode substrate 21 and the substrate 24 to be the cover.

(54) The present invention relates to a method of forming multiple structures which are arranged on a substrate in a device formed by bonding two substrates and which are used for electrical connection with the outside, mechanical connection with the outside, or optical connection, and can be utilized in production of MEMS, microfluidic devices, and electronic parts.

(55) While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. The scope of the following claims is to be accorded the broadest interpretation so as to encompass all such modifications and equivalent structures and functions.

(56) This application claims the benefit of Japanese Patent Application No. 2015-084843, filed Apr. 17, 2015, which is hereby incorporated by reference herein in its entirety.