Antenna tuning circuitry with reduced interference
09865922 ยท 2018-01-09
Assignee
Inventors
- Daniel Charles Kerr (Oak Ridge, NC, US)
- Christian Rye Iversen (Vestbjerg, DK)
- Eric K. Bolton (Kernersville, NC, US)
- Ruediger Bauder (Feldkirchen-Westerham, DE)
- Nadim Khlat (Cugnaux, FR)
Cpc classification
International classification
Abstract
Antenna tuning circuitry includes an antenna tuning node, an antenna tuning switch, and a resonant tuning circuit. The antenna tuning node is coupled to a resonant conduction element of an antenna. The antenna tuning switch and the resonant tuning circuit are coupled in series between the antenna tuning switch and the antenna tuning node, such that the resonant tuning circuit is between the antenna tuning node and the antenna tuning switch. The resonant tuning circuit is configured to resonate at one or more harmonic frequencies generated by the antenna tuning switch such that a high impedance path is formed between the antenna tuning switch and the antenna tuning node at harmonic frequencies generated by the antenna tuning switch. Accordingly, harmonic interference generated by the antenna tuning switch is prevented from reaching the antenna, while simultaneously allowing for tuning of the antenna.
Claims
1. Antenna tuning circuitry comprising: an antenna tuning node coupled directly to a resonant conduction element of an antenna; an antenna tuning switch; a resonant tuning circuit coupled between the antenna tuning switch and the antenna tuning node such that the resonant tuning circuit is coupled directly to the antenna tuning node and the antenna tuning switch is coupled between the resonant tuning circuit and ground, the resonant tuning circuitry configured to resonate at one or more harmonic frequencies generated by the antenna tuning switch such that a high impedance path is formed between the antenna tuning switch and the antenna tuning node at the one or more harmonic frequencies generated by the antenna tuning switch, wherein when the antenna tuning switch is closed, the antenna tuning circuitry is configured to change an impedance of the resonant conduction element of the antenna such that a resonant frequency of the resonant conduction element is changed; an additional antenna tuning switch; and an additional resonant tuning circuit coupled between the additional antenna tuning switch and the antenna tuning node and configured to resonate at one or more harmonic frequencies of the additional antenna tuning switch such that a high impedance path is formed between the additional antenna tuning switch and the antenna tuning node at the one or more harmonic frequencies generated by the additional antenna tuning switch.
2. The antenna tuning circuitry of claim 1 wherein the resonant tuning circuit comprises a resonant capacitor coupled in parallel with a resonant inductor.
3. The antenna tuning circuitry of claim 2 wherein the resonant capacitor and the antenna tuning switch are monolithically integrated on a semiconductor die.
4. The antenna tuning circuitry of claim 3 wherein the semiconductor die is a silicon-on-insulator (SOI) semiconductor die.
5. The antenna tuning circuitry of claim 1 wherein the resonant tuning circuit and the additional resonant tuning circuit each comprise a resonant capacitor coupled in parallel with a resonant inductor.
6. The antenna tuning circuitry of claim 5 wherein each one of the resonant tuning capacitors in the resonant tuning circuit and the additional resonant tuning circuit, the antenna tuning switch, and the additional antenna tuning switch, are monolithically integrated on a semiconductor die.
7. The antenna tuning circuitry of claim 6 wherein the semiconductor die is a silicon-on-insulator (SOI) semiconductor die.
8. Antenna circuitry comprising: a low-band resonant conduction element; a high-band resonant conduction element; and antenna tuning circuitry comprising: an antenna tuning node coupled directly to one of the low-band resonant conduction element and the high-band resonant conduction element; an antenna tuning switch; a resonant tuning circuit coupled between the antenna tuning switch and the antenna tuning node such that the resonant tuning circuit is coupled directly to the antenna tuning node and the antenna tuning switch is coupled between the resonant tuning circuit and ground, the resonant tuning circuitry configured to resonate at one or more harmonic frequencies of the antenna tuning switch such that a high impedance path is formed between the antenna tuning switch and the antenna tuning node at the one or more harmonic frequencies generated by the antenna tuning switch, wherein when the antenna tuning switch is closed, the antenna tuning circuitry is configured to change an impedance of the resonant conduction element of the antenna such that a resonant frequency of the resonant conduction element is changed; an additional antenna tuning switch; and an additional resonant tuning circuit coupled between the additional antenna tuning switch and the antenna tuning node and configured to resonate at one or more harmonic frequencies of the additional antenna tuning switch such that a high impedance path is formed between the additional antenna tuning switch and the antenna tuning node at the one or more harmonic frequencies generated by the additional antenna tuning switch.
9. The antenna circuitry of claim 8 wherein the resonant tuning circuit comprises a resonant capacitor coupled in parallel with a resonant inductor.
10. The antenna circuitry of claim 9 wherein the resonant capacitor and the antenna tuning switch are monolithically integrated on a semiconductor die.
11. The antenna circuitry of claim 10 wherein the semiconductor die is a silicon-on-insulator (SOI) semiconductor die.
12. The antenna circuitry of claim 8 wherein the resonant tuning circuit and the additional resonant tuning circuit each comprise a resonant capacitor coupled in parallel with a resonant inductor.
13. The antenna circuitry of claim 12 wherein each one of the resonant tuning capacitors in the resonant tuning circuit and the additional resonant tuning circuit, the antenna tuning switch, and the additional antenna tuning switch, are monolithically integrated on a semiconductor die.
14. The antenna circuitry of claim 13 wherein the semiconductor die is a silicon-on-insulator (SOI) semiconductor die.
15. The antenna circuitry of claim 8 wherein the antenna circuitry is configured to simultaneously: receive a high-band receive signal via the high-band resonant conduction element; and transmit a low-band transmit signal via the low-band resonant conduction element.
16. The antenna circuitry of claim 15 wherein the resonant tuning circuit is configured to resonate at one or more harmonic frequencies of the low-band transmit signal.
17. The antenna circuitry of claim 16 wherein the low-band transmit signal is a band 17 uplink signal with a frequency range between about 704-716 MHz and the high-band receive signal is a band 4 downlink signal with a frequency range between about 2110-2155 MHz.
18. The antenna circuitry of claim 17 wherein the resonant tuning circuit is configured to resonate at a third harmonic frequency of the low-band transmit signal.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1) The accompanying drawings incorporated in and forming a part of this specification illustrate several aspects of the disclosure, and together with the description serve to explain the principles of the disclosure.
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DETAILED DESCRIPTION
(9) The embodiments set forth below represent the necessary information to enable those skilled in the art to practice the disclosure and illustrate the best mode of practicing the disclosure. Upon reading the following description in light of the accompanying drawings, those skilled in the art will understand the concepts of the disclosure and will recognize applications of these concepts not particularly addressed herein. It should be understood that these concepts and applications fall within the scope of the disclosure and the accompanying claims.
(10) It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present disclosure. As used herein, the term and/or includes any and all combinations of one or more of the associated listed items.
(11) Relative terms such as below or above or upper or lower or horizontal or vertical may be used herein to describe a relationship of one element, layer, or region to another element, layer, or region as illustrated in the Figures. It will be understood that these terms and those discussed above are intended to encompass different orientations of the device in addition to the orientation depicted in the Figures.
(12) The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used herein, the singular forms a, an, and the are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms comprises, comprising, includes, and/or including when used herein specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
(13) Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It will be further understood that terms used herein should be interpreted as having a meaning that is consistent with their meaning in the context of this specification and the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
(14) Turning now to
(15) The first resonant tuning circuit 28A, the second resonant tuning circuit 28B, and the third resonant tuning circuit 28C are each associated with a particular impedance, which may be the same or different from one to the next. In operation, the control circuitry 30 opens and closes the first antenna tuning switch SW.sub.AT1, the second antenna tuning switch SW.sub.AT2, and/or the third antenna tuning switch SW.sub.AT3, either separately or together, in order to alter the impedance of the resonant conducting element 22 of the antenna 24. Changing the impedance of the resonant conducting element 22 effectively changes the resonant frequency thereof, thereby tuning the antenna 24 to a desired frequency or frequencies. Accordingly, the antenna 24 may more easily transmit or receive signals about a desired frequency or frequencies. Additionally, the first resonant tuning circuit 28A, the second resonant tuning circuit 28B, and the third resonant tuning circuit 28C are each configured to resonate at one or more harmonic frequencies generated by the antenna tuning switch SW.sub.AT to which they are attached, as discussed in further detail below. When the first resonant tuning circuit 28A, the second resonant tuning circuit 28B, and the third resonant tuning circuit 28C resonate, they each produce a substantially high impedance, thereby blocking harmonic signals generated by the antenna tuning switch SW.sub.AT coupled to the circuitry from reaching the antenna tuning node 26 and thus the antenna 24. Accordingly, the antenna 24 may be tuned while simultaneously avoiding problematic harmonic distortion.
(16) Although three resonant tuning circuits 28 coupled in series with three antenna tuning switches SW.sub.AT are shown in
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(18) As discussed above, the values of the first resonant capacitor C.sub.R1 and the first resonant inductor L.sub.R1 are chosen such that the parallel combination of the first resonant capacitor C.sub.R1 and the first resonant inductor L.sub.R1 provides a desirable impedance value for presenting to the antenna tuning node 26 in order to tune the resonant conducting element 22 of the antenna 24, while simultaneously resonating at one or more harmonic frequencies generated by the first antenna tuning switch SW.sub.AT1 in order to block harmonic signals generated by the first antenna tuning switch SW.sub.AT1 from reaching the antenna tuning node 26 and thus the resonant conducting element 22 of the antenna 24. The values of the second resonant capacitor C.sub.R2, the second resonant inductor L.sub.R2, the third resonant capacitor C.sub.R3, and the third resonant inductor L.sub.R3 are chosen similarly, such that the combination of the second resonant capacitor C.sub.R2 and the second resonant inductor L.sub.R2 and the combination of the third resonant capacitor C.sub.R3 and the third resonant inductor L.sub.R3 provide a desirable impedance value for presenting to the antenna tuning node 26 in order to tune the resonant conducting element 22 of the antenna 24, while simultaneously resonating at one or more harmonic frequencies generated by the second antenna tuning switch SW.sub.AT2 and the third antenna tuning switch SW.sub.AT3, respectively in order to block harmonic signals generated by the second antenna tuning switch SW.sub.AT2 and the third antenna tuning switch SW.sub.AT3 from reaching the antenna tuning node 26 and thus the resonant conducting element 22 of the antenna 24.
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(21) The resonant capacitor C.sub.R and the resonant inductor L.sub.R are configured to resonate at one or more harmonic frequencies generated by the first antenna tuning switch SW.sub.AT1, the second antenna tuning switch SW.sub.AT2, and the third antenna tuning switch SW.sub.AT3. When the resonant capacitor C.sub.R and the resonant inductor L.sub.R resonate, they produce a substantially low impedance path from the antenna tuning node 26 to ground, thereby shorting harmonic signals generated by the first antenna tuning switch SW.sub.AT1, the second antenna tuning switch SW.sub.AT2, and the third antenna tuning switch SW.sub.AT3 to ground and preventing harmonic distortion from reaching the antenna 24. Accordingly, the antenna 24 may be tuned while simultaneously avoiding problematic harmonic distortion.
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(26) On the transmit side, the transceiver circuitry 44 receives digitized data, which may represent voice, data, or control information. The encoded data is modulated to produce a carrier signal at a desired transmit frequency. The carrier signal is then delivered to one or more of the plurality of power amplifiers 46A-46N, where it is amplified and delivered to the antenna switching circuitry 52, which may have previously set the impedance of the antenna 24 in order to optimize transmission of signals about a desired frequency, through the duplexer circuitry 50. The antenna switching circuitry 52 selectively couples one or more output terminals of the plurality of power amplifiers 46A-46N to the diplexer 54. The carrier signal is then filtered by the diplexer 54, and delivered through the antenna tuning circuitry 20 to the antenna 24. As discussed above, the antenna tuning circuitry 20 is configured to ensure optimal operation of the antenna 24 over a wide bandwidth, thereby increasing the performance of the RF front end circuitry 42. The control circuitry 30 may be configured to control not only the antenna tuning circuitry 20, but also one or more additional operating parameters of the transceiver circuitry 44, the antenna switching circuitry 52, and/or the diplexer 54.
(27) Those skilled in the art will recognize improvements and modifications to the embodiments of the present disclosure. All such improvements and modifications are considered within the scope of the concepts disclosed herein and the claims that follow.