OPTICAL SYSTEM AND METHOD FOR A RADIATION SOURCE
20250008634 ยท 2025-01-02
Assignee
Inventors
Cpc classification
G03F7/702
PHYSICS
G03F7/70233
PHYSICS
G02B19/0019
PHYSICS
H05G2/0086
ELECTRICITY
International classification
H05G2/00
ELECTRICITY
G02B19/00
PHYSICS
Abstract
An optical system for directing first and second laser pulses along an optical axis to a target to generate extreme ultraviolet radiation from said target. The optical system comprises a first optical component configured to redistribute a first laser pulse to form a shaped laser pulse having a hollow region. The optical system comprise a second optical component configured to focus the shaped laser pulse toward the target. The optical system comprises a third optical component configured to focus a second laser pulse toward the target within the hollow region of the shaped laser pulse. The first, second and third optical components are coaxially arranged on the optical axis.
Claims
1.-15. (canceled)
16. An optical system for directing first and second laser pulses along an optical axis to a target to generate extreme ultraviolet radiation from the target, the system comprising: a first optical component configured to redistribute the first laser pulse to form a shaped laser pulse having a hollow region; a second optical component configured to focus the shaped laser pulse toward the target; and a third optical component configured to focus the second laser pulse toward the target within the hollow region of the shaped laser pulse, wherein the first, second and third optical components are coaxially arranged on the optical axis.
17. The optical system of claim 16, wherein the first and second laser pulses comprise different wavelengths.
18. The optical system of claim 16, wherein the first optical component and the third optical component are located on different surfaces of a single optical element.
19. The optical system of claim 18, wherein the first optical component is formed on a front side of the single optical element and the third optical component is formed on a back side of the single optical element.
20. The optical system of claim 16, further comprising a radiation collector configured to receive extreme ultraviolet radiation emitted by the target, wherein the radiation collector comprises an aperture coaxially arranged on the optical axis and wherein the second and third optical components are configured to focus the shaped and second laser pulses through the aperture.
21. The optical system of claim 16, wherein the second optical component is configured to interact with the shaped laser pulse only and the third optical component is configured to interact with the second laser pulse only.
22. The optical system of claim 16, wherein the second optical component comprises an opening coaxially arranged on the optical axis.
23. The optical system of claim 16, wherein the third optical component is configured to focus a third laser pulse along the optical axis to the target within the hollow region of the shaped laser pulse, and wherein the third laser pulse comprises a different wavelength than the first and second laser pulses.
24. An extreme ultraviolet radiation source comprising the optical system of claim 16.
25. A lithographic system comprising the extreme ultraviolet radiation source of claim 24.
26. A method of directing first and second laser pulses along an optical axis to a target to generate extreme ultraviolet radiation from the target, the method comprising: using a first optical component to redistribute the first laser pulse to form a shaped laser pulse having a hollow region; using a second optical component to focus the shaped laser pulse toward the target; using a third optical component to focus the second laser pulse toward the target within the hollow region of the shaped laser pulse; and coaxially arranging the first, second and third optical components on the optical axis.
27. The method of claim 26, wherein the first and second laser pulses comprise different wavelengths of radiation, and the method further comprises: locating the first optical component and the third optical component on different surfaces of a single optical element, or locating the first optical component on a front side of the single optical element and locating the third optical component on a back side of the single optical element.
28. The method of claim 26, further comprising: using a radiation collector to receive extreme ultraviolet radiation emitted by the target; arranging an aperture of the radiation collector coaxially on the optical axis; and using the second and third optical components to focus the shaped and second laser pulses through the aperture.
29. The method of claim 26, further comprising: using the second optical component to interact with the shaped laser pulse only; and using the third optical component to interact with the second laser pulse only.
30. The method of projecting a patterned beam of radiation onto a substrate, comprising using the method of claim 26 to generate extreme ultraviolet radiation.
31. The method of claim 26, further comprising providing an opening in the second optical component and coaxially arranging the opening on the optical axis.
32. The method of claim 26, further comprising using the third optical component to focus a third laser pulse along the optical axis to the target within the hollow region of the shaped pulse, wherein the third laser pulse comprises a different wavelength to the first and second laser pulses.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0042] Embodiments of the invention will now be described, by way of example only, with reference to the accompanying schematic drawings, in which:
[0043]
[0044]
[0045]
[0046]
[0047]
DETAILED DESCRIPTION
[0048]
[0049] The illumination system IL is configured to condition the EUV radiation beam B before the EUV radiation beam B is incident upon the patterning device MA. Thereto, the illumination system IL may include a facetted field mirror device 10 and a facetted pupil mirror device 11. The faceted field mirror device 10 and faceted pupil mirror device 11 together provide the EUV radiation beam B with a desired cross-sectional shape and a desired intensity distribution. The illumination system IL may include other mirrors or devices in addition to, or instead of, the faceted field mirror device 10 and faceted pupil mirror device 11.
[0050] After being thus conditioned, the EUV radiation beam B interacts with the patterning device MA. As a result of this interaction, a patterned EUV radiation beam B is generated. The projection system PS is configured to project the patterned EUV radiation beam B onto the substrate W. For that purpose, the projection system PS may comprise a plurality of mirrors 13,14 which are configured to project the patterned EUV radiation beam B onto the substrate W held by the substrate table WT. The projection system PS may apply a reduction factor to the patterned EUV radiation beam B, thus forming an image with features that are smaller than corresponding features on the patterning device MA. For example, a reduction factor of 4 or 8 may be applied. Although the projection system PS is illustrated as having only two mirrors 13, 14 in
[0051] The substrate W may include previously formed patterns. Where this is the case, the lithographic apparatus LA aligns the image, formed by the patterned EUV radiation beam B, with a pattern previously formed on the substrate W.
[0052] A relative vacuum, i.e. a small amount of gas (e.g. hydrogen) at a pressure well below atmospheric pressure, may be provided in the radiation source SO, in the illumination system IL, and/or in the projection system PS.
[0053] The radiation source SO shown in
[0054] The lithographic apparatus LA comprises an optical system 100 for directing the laser pulses 2 along an optical axis to the tin at the plasma formation region 4 to generate EUV radiation. An example of the optical system 100 is shown in greater detail in
[0055] The EUV radiation from the plasma is collected and focused by a collector 5. The collector 5 comprises, for example, a near-normal incidence radiation collector 5 (sometimes referred to more generally as a normal-incidence radiation collector). The collector 5 may have a multilayer mirror structure which is arranged to reflect EUV radiation (e.g., EUV radiation having a desired wavelength such as 13.5 nm). The collector 5 may have an ellipsoidal configuration, having two focal points. A first one of the focal points may be at the plasma formation region 4, and a second one of the focal points may be at an intermediate focus 6, as discussed below. The collector 5 may comprise an aperture 20 through which the laser pulses 2 travel to reach the plasma formation region 4.
[0056] The laser system 1 may be spatially separated from the radiation source SO. Where this is the case, the laser pulses 2 may be passed from the laser system 1 to the radiation source SO with the aid of a beam delivery system (not shown) comprising, for example, suitable directing mirrors and/or a beam expander, and/or other optics. The laser system 1, the radiation source SO and the beam delivery system may together be considered to be a radiation system.
[0057] Radiation that is reflected by the collector 5 forms the EUV radiation beam B. The EUV radiation beam B is focused at intermediate focus 6 to form an image at the intermediate focus 6 of the plasma present at the plasma formation region 4. The image at the intermediate focus 6 acts as a virtual radiation source for the illumination system IL. The radiation source SO is arranged such that the intermediate focus 6 is located at or near to an opening 8 in an enclosing structure 9 of the radiation source SO.
[0058]
[0059] In the example of
[0060] The optical system 100 comprises a second optical component 160 configured to focus the shaped laser pulse 150 toward the target. In the example of
[0061] The optical system 100 comprises a third optical component 170 configured to focus the second laser pulse 120 toward the target within the hollow region 155 of the shaped laser pulse 150. That is, the third optical component 170 directs and focuses the second laser pulse 120 along the optical axis 130 to the target such that the second laser pulse 120 propagates within the hollow region 155 of the shaped laser pulse 150. A circular cross-section of the second laser pulse 120 is nested within the inner circle of the annular cross-section of the shaped laser pulse 150 (an example of which, as seen along the optical axis 130, is shown in
[0062] Advantageously, the coaxial arrangement of the first, second and third optical components 140, 160, 170 allows to point the laser pulses 110, 120 (or laser beams) coaxially in to the plasma formation region location 4 and interact with the target even if in the case the target is slightly off axis.
[0063] In another embodiment, the third optical component 170 comprises a focusing mirror having a concave reflective surface or a flat surface upon which the second laser pulse 120 is incident. In the embodiment wherein the third optical component 170 comprises a mirror having a flat surface, the optical system 100 further comprises an additional focusing system (not shown in the figures) positioned in the upstream configured to focus the second laser pulse 120.
[0064] In the example of
[0065] The first optical component 140 is configured to interact with the first laser pulse 110 only. The second optical component 160 is configured to interact with the shaped laser pulse 150 only. The third optical component 170 is configured to interact with the second laser pulse 120 only. This advantageously allows each optical component 140,160, 170 to be tailored towards interacting with its respective laser pulse 110, 120. For example, the first laser pulse 110, and therefore the shaped laser pulse 150, may have a wavelength of about 10.6 m. The first laser pulse 110 may be a CO2 laser pulse (i.e. generated by a carbon dioxide laser). The first and second optical components 140, 160 may therefore be designed specifically to be as reflective as possible for wavelengths of about 10.6 m. For example, the first and/or second optical components 140, 160 may comprise a reflective coating material such as, for example, Copper, Silicon Carbide, Silicon, coated steel, etc. As another example, the second laser pulse 120 may have a wavelength of about 1030 nm or 1064 nm. The second laser pulse 120 may be a pulse generated in a solid state laser, such as a YAG laser. The third optical component 170 may therefore be designed specifically to be as reflective as possible for wavelengths of about 1030 nm or 1064 nm. For example, the third optical component 170 may comprise a reflective coating material such as, for example, Silver, Gold, etc. Devoting different optical components 140,160, 170 to different laser pulses 110, 120 also advantageously reduces the risk of the optical components overheating and thereby deforming or becoming damaged compared to known optical system that use a single optical element to interact with both laser pulses.
[0066] Additionally, the optical system of the present invention advantageously makes easier the coating selection process, allowing using well known coatings for each laser pulses or laser beams.
[0067] Whilst
[0068]
[0069] The second optical component (not shown in
[0070] In another embodiment, laser pulses 120 and 200 may be located next to each other on the third optical component 170. Therefore, the third optical component 170 is configured to focus said pulses even if they are placed in different areas of said third optical component 170. This means that the second laser pulse 120 and the third laser pulse 200 are close to the axis. Therefore, the angle with respect to the optical axis 130 is reduced in comparison with other arrangements of the state of the art, which in turn advantageously increases the conversion efficiency of the extreme ultraviolet radiation source SO.
[0071] It will be appreciated that each laser pulse 120, 150, 200 travels along the optical axis 130 and arrives at the target at different times. The view of
[0072] Each laser pulse comprises one or more different characteristics (e.g. wavelength, power, shape, etc.) for interacting with the target in different ways. The second laser pulse 120 may arrive at the target first. The second laser pulse 120 may be configured to change a shape of the target. For example, the second laser pulse 120 may be configured to change the target from a droplet shape to a flattened circular, or pancake shape. The second laser pulse 120 may comprise a wavelength of about 1030 nm or about 1064 nm. The second laser pulse 120 may be generated by one or more of any suitable lasers such as, for example, a solid state laser, a semiconductor laser, etc.
[0073] The third laser pulse 200 may arrive at the target second. That is, the third laser pulse 200 may be incident on the target after the second laser pulse 120 and before the first laser pulse 110. The third laser pulse 200 may be configured to prepare the target for receipt of the first laser pulse 110. For example, the third laser pulse 200 may be configured to atomize the target (i.e. convert the pancake droplet to many small particles, similar to a gaseous state) in preparation for receipt of the first laser pulse 110 for the generation of EUV radiation. The third laser pulse 200 may act to increase an absorption of the first laser pulse 110 by the target. The third laser pulse 200 may have a wavelength of about 1064 nm. The third laser pulse 200 may be generated by one or more of any suitable lasers such as, for example, a solid state laser, a semiconductor laser, etc. A single laser may be used to generate the second laser pulse 120 and the third laser pulse 200.
[0074] It should be understood that another definition of atomizing the target may be rarifying the target.
[0075] The first laser pulse 110 may arrive at the target last. That is, the first laser pulse 110 may be incident on the target after the second laser pulse 120 and the third laser pulse 200. The first laser pulse 110 may be configured to cause the target to emit EUV radiation. For example, the first laser pulse 110 may convert the target into a plasma that emits EUV radiation. The first laser pulse 110 may comprise a wavelength of about 10.6 m. The first laser pulse 110 may be generated by one or more of any suitable lasers such as, for example, a CO.sub.2 laser.
[0076] As previously discussed with reference to
[0077] The example of the previous paragraph may be applicable for lithography systems with high numerical aperture NA optics. For EUV lithography systems, it should be understood as high NA a system with NA above 0.33, for example 0.55. High NA optics results in shorter effective focal length of said optics. The coaxial arrangement of the laser pulses 120, 150, 200 (e.g. as shown in
[0078] The coaxial arrangement of the laser pulses 120, 150, 200 reduces an angle between the angle of incidence of the first laser pulse 110 on the target and an angle of incidence of the second laser pulse 120 on the target compared to known optical systems. This advantageously improves an efficiency of a radiation source SO and/or a lithographic apparatus LA comprising the optical system 100 because less EUV radiation is lost at the target and/or in the far field (i.e. in the illumination system IS and/or projection system PS of the lithographic apparatus LA). The angle between the angle of incidence of the first laser pulse 110 on the target and the angle of incidence of the second laser pulse 120 on the target may be substantially zero.
[0079] The coaxial arrangement of the laser pulses 120, 150, 200 reduces an angle between the angle of incidence of the first laser pulse 110 at the target and the optical axis 130 upon which the aperture 20 of the radiation collector is centered compared to known optical systems. This advantageously improves an efficiency of a radiation source SO and/or a lithographic apparatus LA comprising the optical system 100 because less EUV radiation is lost through a tilt in the EUV radiation in the far field (i.e. in the illumination system IS and/or projection system PS of the lithographic apparatus LA). In addition, losses of EUV radiation at the intermediate focus 6 are reduced due to the image of the plasma at the intermediate focus (i.e. the virtual radiation source for the illumination system IS) not being tilted. The angle between the angle of incidence of the first laser pulse 110 at the target and the optical axis 130 upon which the aperture 20 of the radiation collector is centered may be substantially zero.
[0080] The coaxial arrangement of the laser pulses 120, 150, 200 increases a numerical aperture available to the laser pulses 110, 120, 200 compared to known optical systems. Increasing the numerical aperture available to the laser pulses 110, 120, 200 advantageously decreases a presence of optical aberrations which may in turn reduce losses of EUV radiation and/or reduce the strength of unwanted back reflections occurring in the optical system 100 and/or the lithographic apparatus LA. Increasing the numerical aperture available to the laser pulses 110, 120, 200 also advantageously reduces a limit on the size of the third laser pulse 200 at the target, which may in turn improve an efficiency with which EUV radiation is generated.
[0081] The coaxial arrangement of the laser pulses 120, 150, 200 advantageously increases the conversion efficiency of the extreme ultraviolet radiation source SO.
[0082] The coaxial arrangement of the laser pulses 120, 150, 200 advantageously increases a stability and reproducibility of the beam profile of the first laser pulse 110 incident on the target, which in turn improves an efficiency and stability of EUV generation and lithographic printing when incorporating the optical system 100.
[0083] The optical system of
[0084]
[0085] The alternative optical system 400 comprises a second optical component 460 configured to focus the shaped laser pulse 150 towards the target. In the example of
[0086] The alternative optical system 400 comprises a third optical component 470 configured to focus the second laser pulse 120 toward the target within the hollow region 455 of the shaped laser pulse 450. In the example of
[0087] In another embodiment the third optical element may be an opening or an aperture. In said embodiment, an additional optical element may be located upstream configured to focus the second laser pulse 120.
[0088] Despite comprising transmissive components rather than reflective components, the alternative optical system 400 conditions laser pulses 110, 120 to achieve the same result as the optical system 100 of
[0089] The first optical component 440 is configured to interact with the first laser pulse 110 only. The second optical component 460 is configured to interact with the shaped laser pulse 150 only. The third optical component 470 is configured to interact with the second laser pulse 120 only. This advantageously allows each optical component 440, 460, 470 to be tailored towards interacting with its respective laser pulse 110, 120. For example, the first laser pulse 110, and therefore the shaped laser pulse 150, may have a wavelength of about 10.6 m. The first and second optical components 440, 460 may therefore be designed specifically to be as transmissive as possible for wavelengths of about 10.6 m. For example, the first and/or second optical components 140, 160 may comprise a material such as ZnSe. As another example, the second laser pulse 120 may have a wavelength of about 1030 nm or about 1064 nm. The third optical component 470 may therefore be designed specifically to be as reflective as possible for wavelengths of about 1030 nm or about 1064 nm. For example, the third optical component 170 may comprise a material such as Quartz, Fused Silica, BK7, etc. Devoting different optical components 440, 460, 470 to different laser pulses 110, 120 also advantageously reduces the risk of the optical components overheating and thereby deforming or becoming damaged compared to known optical system that use a single optical element to interact with both laser pulses.
[0090]
[0091] The method may comprise an optional step of locating the first optical component and the third optical component on different surfaces of a single optical element (e.g. the single optical element 180 shown in
[0092] The method may comprise an optional step of using a radiation collector to receive extreme ultraviolet radiation emitted by the target (e.g. the radiation collector 5 shown in
[0093] The method may comprise an optional step of using the second and third optical components to focus the shaped and second laser pulses through the aperture (e.g. the coaxial arrangement shown in
[0094] The method may comprise an optional step of using the first optical component to interact with the first laser pulse only. The method may comprise an optional step of using the second optical component to interact with the shaped laser pulse only. The method may comprise an optional step of using the third optical component to interact with the second laser pulse only. Each of these optional steps is demonstrated by for example, the optical systems of
[0095] The method may comprise an optional step of providing an opening in the second optical component. The method may comprise an optional step of coaxially arranging the opening on the optical axis. Each of these optional steps is demonstrated by for example, the optical systems of
[0096] The method may comprise an optional step of using the third optical component to focus a third laser pulse along the optical axis to the target within the hollow region of the shaped pulse. The third laser pulse may comprise a different wavelength to the first and second laser pulses. Each of these optional steps is demonstrated by for example, the coaxial arrangement of
[0097] A method of projecting a patterned beam of radiation onto a substrate, may comprise using the method of
[0098] Although specific reference may be made in this text to the use of lithographic apparatus in the manufacture of ICs, it should be understood that the lithographic apparatus described herein may have other applications. Possible other applications include the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, flat-panel displays, liquid-crystal displays (LCDs), thin-film magnetic heads, etc.
[0099] Although specific reference may be made in this text to embodiments of the invention in the context of a lithographic apparatus, embodiments of the invention may be used in other apparatus. Embodiments of the invention may form part of a mask inspection apparatus, a metrology apparatus, or any apparatus that measures or processes an object such as a wafer (or other substrate) or mask (or other patterning device). These apparatus may be generally referred to as lithographic tools. Such a lithographic tool may use vacuum conditions or ambient (non-vacuum) conditions.
[0100] Where the context allows, embodiments of the invention may be implemented in hardware, firmware, software, or any combination thereof. For example, the embodiments of the invention may be implemented using a computer program comprising computer readable instructions configured to cause a computer to carry out a method according to the invention. Embodiments of the invention may include a computer readable medium carrying said computer program. As another example, embodiments of the invention may be implemented using a computer apparatus comprising a memory storing processor readable instructions and a processor arranged to read and execute instructions stored in said memory. Said processor readable instructions may comprise instructions arranged to control the computer to carry out a method according to embodiment of the invention. Embodiments of the invention may also be implemented as instructions stored on a machine-readable medium, which may be read and executed by one or more processors. A machine-readable medium may include any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computing device). For example, a machine-readable medium may include read only memory (ROM); random access memory (RAM); magnetic storage media; optical storage media; flash memory devices; electrical, optical, acoustical or other forms of propagated signals (e.g. carrier waves, infrared signals, digital signals, etc.), and others. Further, firmware, software, routines, instructions may be described herein as performing certain actions. However, it should be appreciated that such descriptions are merely for convenience and that such actions in fact result from computing devices, processors, controllers, or other devices executing the firmware, software, routines, instructions, etc. and in doing that may cause actuators or other devices to interact with the physical world.
[0101] While specific embodiments of the invention have been described above, it will be appreciated that the invention may be practiced otherwise than as described. The descriptions above are intended to be illustrative, not limiting. Thus it will be apparent to one skilled in the art that modifications may be made to the invention as described without departing from the scope of the clauses set out below [0102] 1. An optical system for directing first and second laser pulses along an optical axis to a target to generate extreme ultraviolet radiation from said target comprising: [0103] a first optical component configured to redistribute the first laser pulse to form a shaped laser pulse having a hollow region; [0104] a second optical component configured to focus the shaped laser pulse toward the target; and, [0105] a third optical component configured to focus the second laser pulse toward the target within the hollow region of the shaped laser pulse, wherein the first, second and third optical components are coaxially arranged on the optical axis. [0106] 2. The optical system of clause 1, wherein the first and second laser pulses comprise different wavelengths. [0107] 3. The optical system of clause 1 or clause 2, wherein the first optical component and the third optical component are located on different surfaces of a single optical element. [0108] 4. The optical system of clause 3, wherein the first optical component is formed on a front side of the single optical element and the third optical component is formed on a back side of the single optical element. [0109] 5. The optical system of any preceding clause, comprising a radiation collector configured to receive extreme ultraviolet radiation emitted by the target, wherein the radiation collector comprises an aperture coaxially arranged on the optical axis and wherein the second and third optical components are configured to focus the shaped and second laser pulses through the aperture. [0110] 6. The optical system of any preceding clause, wherein the second optical component is configured to interact with the shaped laser pulse only and the third optical component is configured to interact with the second laser pulse only. [0111] 7. The optical system of any preceding clause, wherein the second optical component comprises an opening coaxially arranged on the optical axis. [0112] 8. The optical system of any preceding clause, wherein the third optical component is configured to focus a third laser pulse along the optical axis to the target within the hollow region of the shaped laser pulse, wherein the third laser pulse comprises a different wavelength to the first and second laser pulses. [0113] 9. An extreme ultraviolet radiation source comprising the optical system of any of clauses 1 to 8. [0114] 10. A lithographic system comprising the extreme ultraviolet radiation source of clause 9. [0115] 11. A method of directing first and second laser pulses along an optical axis to a target to generate extreme ultraviolet radiation from said target comprising: [0116] using a first optical component to redistribute the first laser pulse to form a shaped laser pulse having a hollow region; [0117] using a second optical component to focus the shaped laser pulse toward the target; [0118] using a third optical component to focus the second laser pulse toward the target within the hollow region of the shaped laser pulse; and, coaxially arranging the first, second and third optical components on the optical axis. [0119] 12. The method of clause 11, wherein the first and second laser pulses comprise different wavelengths of radiation. [0120] 13. The method of clause 11 or clause 12, comprising locating the first optical component and the third optical component on different surfaces of a single optical element. [0121] 14. The method of clause 13, comprising: [0122] locating the first optical component on a front side of the single optical element; and, locating the third optical component on a back side of the single optical element. [0123] 15. The method of any of clauses 11 to 14, comprising: [0124] using a radiation collector to receive extreme ultraviolet radiation emitted by the target; [0125] arranging an aperture of the radiation collector coaxially on the optical axis; and, using the second and third optical components to focus the shaped and second laser pulses through the aperture. [0126] 16. The method of any of clauses 11 to 15, comprising: [0127] using the second optical component to interact with the shaped laser pulse only; and, using the third optical component to interact with the second laser pulse only. [0128] 17. The method of any of clauses 11 to 16, comprising: [0129] providing an opening in the second optical component; and, [0130] coaxially arranging the opening on the optical axis. [0131] 18. The method of any of clauses 11 to 17, comprising using the third optical component to focus a third laser pulse along the optical axis to the target within the hollow region of the shaped pulse, wherein the third laser pulse comprises a different wavelength to the first and second laser pulses. [0132] 19. A method of projecting a patterned beam of radiation onto a substrate, comprising using the method of any of clauses 11 to 18 to generate extreme ultraviolet radiation. [0133] 20. A computer program comprising computer readable instructions configured to cause a computer to carry out a method according to any of clauses 11 to 19. [0134] 21. A computer readable medium carrying a computer program according to clause 20. [0135] 22. A computer apparatus comprising: [0136] a memory storing processor readable instructions; and [0137] a processor arranged to read and execute instructions stored in said memory; [0138] wherein said processor readable instructions comprise instructions arranged to control the computer to carry out a method according to any of clauses 11 to 19.