Electrode and method for production

Abstract

An electrode for an electrochemical reaction bath has a base body, an active side which is configured to come into contact with the reaction bath, and a passive side which is configured to come into contact with at least one electrical conductor. The passive side includes a doped carbon coating that is preferably less than 5 μm in thickness. Preferably the doped carbon coating is a doped polycrystalline diamond coating in sp.sup.3 configuration and is doped with boron.

Claims

1. An electrode for an electrochemical reaction bath, the electrode comprising a base body, an active side which is configured to come into contact with the reaction bath, and a passive side which is configured to come into contact with at least one electrical conductor, wherein the passive side has a doped carbon coating.

2. The electrode according to claim 1 wherein the doped carbon coating is a doped diamond coating.

3. The electrode according to claim 1 wherein the base body is made of silicon, and/or the doped carbon coating is doped with boron.

4. The electrode according to claim 1 wherein the active side comprises a doped diamond coating

5. The electrode according to claim 4 wherein the doped diamond coating is doped with boron.

6. A method for producing an electrode according to claim 1, wherein the method comprises: coating the active side of the base body with a doped diamond coating, cleaning the passive side, and coating the passive side with the doped carbon coating.

7. The method according to claim 6 wherein the passive side is ground prior to coating the passive side.

8. The method according to claim 7 wherein at least some of the material of the base body when being ground.

9. The method according to claim 7 wherein the passive side is subjected to an etching treatment after grinding.

10. The method according to claim 9 wherein the etching is performed with one or more of potassium hydroxide and hydrofluoric acid.

11. The method according to claim 6 wherein, when cleaning the passive side, the passive side is cleaned in at least one gas phase etching step.

12. The method according to claim 11 wherein the at least one gas phase is a hydrogen (H.sub.2) gas.

13. The method according to claim 6 wherein the doped carbon coating is less than 5 μm thick

14. The method according to claim 6 wherein the doped carbon coating is less than 2 μm thick

15. The method according to claim 6 wherein the doped carbon coating is less than 1 μm thick.

16. The method according to claim 6 wherein the passive side exhibits a surface roughness of 0.2 μm<R.sub.a<0.6 μm prior to coating with the doped carbon coating and/or of R.sub.z<10 μm and/or R.sub.a<1.0 μm after coating.

17. The method according to claim 6 wherein the doped carbon coating is a doped polycrystalline diamond coating in sp.sup.3 configuration.

Description

DESCRIPTION OF THE DRAWINGS

[0010] FIG. 1 is a schematic view of an exemplary electrode according to the invention.

DETAILED DESCRIPTION

[0011] The invention is based on the knowledge that a carbon coating, especially if it is in the form of a doped diamond coating, greatly reduces wear and corrosion on the passive side of the electrode, yet still exhibits sufficient conductivity. In addition, a raw surface of the carbon coating, in particular the diamond coating, can have an activating effect on the individual elements or pins used to transmit the electrical current, since an oxide layer formed on the individual elements or pins is mechanically removed by the relative movement between the electrode and the individual elements or pins.

[0012] The doped carbon coating is preferably a doped diamond coating. Doping with boron, for example, increases the electrical conductivity of the diamond coating to such an extent that the electrical current required for operating the electrode can be transferred.

[0013] The base body is preferably made from silicon. Alternatively or additionally, the doped carbon coating is doped with boron. The silicon is preferably highly conductive.

[0014] In a preferred embodiment, the active side of the electrode features a doped diamond coating, which is preferably doped with boron. FIG. 1 shows a base body 1 of an electrode with an active side 3 and a passive side 5, where the shape of the electrode can be widely varied to suit the needs of the application.

[0015] The invention also solves the problem addressed by way of a method for producing an electrode of the type described here, the method comprising the following steps:

[0016] a) Coating the active side of the base body with a doped diamond coating,

[0017] b) Cleaning the passive side,

[0018] c) Coating the passive side with the doped carbon coating.

[0019] In step a) of the method, the active side of the base body is provided with a doped diamond coating. This preferably occurs via vapor deposition, known as CVD (chemical vapor deposition) in the prior art. In this case, it is advantageous if this coating only takes place on the active side of the base body. However, this is difficult to achieve with vapor deposition, such that the passive side of the base body opposite the active side also has a low coating following the execution of step a) of the method. The careful selection of distances between base bodies that are simultaneously coated in a single step of the method reduces the coating of the respective passive side of the base body.

[0020] This is why the passive side of the base body is cleaned in step b) of the method. Any deposits or depositions applied to the passive side of the base body in step a) of the method are removed. The passive side that is cleaned in this manner is then coated with a doped carbon coating. This is also preferably done in a CVD process.

[0021] The doped carbon coating is only necessary in the area of the passive side, which is used for the electrical contacting. In the case of full-surface contacting, a flat contact element, such as a plate, is arranged on the passive side, preferably pressed against it. In this case, the entire passive side is to be provided with the doped carbon coating. If only partial-surface contacting is used, in which at least one flat contact element is also used, but whose surface is smaller than the passive side of the electrode, only the area of the passive side that comes into contact with the at least one contact element is to be provided with the doped carbon coating. It may be advantageous to use multiple flat contact elements, for example two, three or four. In the case of partial-surface contacting, it may also be advantageous to provide the entire passive side of the electrode with the doped carbon coating.

[0022] In the case of contacting via pins or similar elements, it is again only the area of the passive side that comes into contact with the contact elements which must be provided with the doped carbon coating. Coating a larger surface, preferably the entire passive side, is advantageous.

[0023] If at least one flat contact element is used, it is advantageous to grind and, where necessary, etch the passive side prior to coating with the doped carbon coating. The passive side can be treated this way even without a flat contact element.

[0024] The passive side is preferably ground prior to coating the passive side, wherein it is particularly preferable to remove material of the base body. Coating the active side of the base body leads to a slight bending or deformation of the base body, which also causes the passive side of the base body to deform. In particular, this has an impact on the planarity of the passive side of the base body. Therefore, in step b) of the method, the passive side is not only cleaned but also ground. A bending of the passive side renders uniform electrical contacting of the passive side more difficult, in particular in the case of full-surface or partial-surface contacting, where a homogeneous current distribution across the different individual contacts is to be achieved. Moreover, grinding the passive side removes any residues that may have formed on the passive side during CVD coating. Particularly preferably, a native silicon surface is available after cleaning the passive side. Grinding the passive side is especially advantageous if extensive, preferably full-surface, contacting of the passive side is to be achieved. If only individual elements or pins are used, the effect of the grinding is smaller, but nevertheless advantageous.

[0025] In a preferred embodiment, the base body to be ground, the active side of which already exhibits a doped diamond coating, is placed for grinding on a surface that provides particular protection of the coated active side. To this end, for example, a foil arrangement is used that compensates for any slight unevenness of the coated active side and at the same time prevents mechanical impacts and damages. Preferably a two-part grinding process is used. In a first grinding step, the diamond-coated areas of the passive side are removed. Other parasitically deposited carbon layers, for example graphite or amorphous carbon, are also removed in this process step. As far as possible, there is no infeed into the silicon surface. When the carbon layers have been removed from the passive side, the material of the base body, preferably silicon, is removed in a second grinding step. For example, 10 μm of infeeds are ground with each grinding step. Multiple such grinding steps can be carried out consecutively, wherein it has been proven advantageous if a maximum of five such infeeds are used, so that a maximum of 50 μm of material of the base body is removed.

[0026] The passive side is preferably subjected to an etching treatment after grinding, in particular with potassium hydroxide (KOH.sub.aq) or hydrofluoric acid (HF.sub.aq). The passive side can be etched with hydrogen or sulphuric acid (H.sub.2SO.sub.4) to remove carbon components, especially graphite components. Treatment with sulphuric acid is considerably coarser. When the passive side has been ground, there are normally no more carbon components or graphite components on the passive side. In this case, the passive side can be etched with potassium hydroxide, for example to remove grinding damage from the surface.

[0027] In a preferred embodiment, while cleaning the passive side, the passive side is cleaned in at least one gas phase etching step, preferably by means of a hydrogen (H.sub.2) gas. The surface of the passive side of the base body is further cleaned by gas phase etching. Adapted diamond nucleation can ensure that as few layer defects as possible occur during the subsequent coating of the passive side with the doped carbon coating.

[0028] Preferably, the doped carbon coating is less than 5 μm thick, preferably less than 2 μm thick. It preferably exhibits a thickness of at least 1 μm. The aim is to achieve the thinnest possible layer thickness with a closed, but not necessarily defect-free coating. The lower the thickness of the carbon coating, the smaller the influence of the coating on the base body. By keeping the thickness of the coating as low as possible, a renewed bending of the base body as well as mechanical stresses are reduced. It also lowers costs. The carbon coating is preferably a diamond coating. However, it may also be designed as a graphite layer or a combination of graphite and diamond layers. A fully defect-free carbon layer is advantageous, but not essential. The applied carbon coating is only subjected to a load specifically at the individual electrical contacts.

[0029] Preferably, the passive side exhibits a surface roughness of 0.2 μm<R.sub.a<0.6 μm prior to coating with the doped carbon coating and/or of R.sub.z<10 μm and/or R.sub.a<1 μm after coating.

[0030] In a preferred embodiment, the doped carbon coating is a doped polycrystalline diamond coating in sp.sup.3 configuration. A doped carbon coating in sp.sup.2 configuration, which is also possible, exhibits a lower resistance to chemical corrosion as well as poorer mechanical properties. In the neutral basic state, carbon atoms have four electrons in the outermost shell, two of which are in the so-called “s” orbital and two in the so-called “p” orbital. These four orbitals hybridize in the diamond structure to form the so-called “sp.sup.3” orbitals.