Manufacturing method for high silicon grain oriented electrical steel sheet

Abstract

Disclosed is a manufacturing method for a high silicon grain oriented electrical steel sheet, the silicon content of the high silicon grain oriented electrical steel is greater than 4 wt %, comprising the steps of: (1) performing decarburization annealing of a cold-rolled steel plate; (2) allowing high silicon alloy particles in a completely solid state to collide at a high speed with the surface of the decarburization annealed steel plate to be sprayed, thus forming a high silicon alloy coating on the surface of the steel plate to be sprayed; (3) coating a release agent and drying; and (4) annealing. The manufacturing method for the high silicon grain oriented electrical steel sheet of the present invention is inexpensive, and, the high silicon grain oriented electrical steel sheet produced is of stable quality and is provided with great magnetic performance.

Claims

1. A method for manufacturing a high silicon grain-oriented electrical steel plate, wherein the high silicon grain-oriented electrical steel plate has a silicon content of greater than 4 wt %, the method comprising steps of: (1) performing a decarburization annealing to a cold-rolled steel plate, thereby forming a decarburization annealed steel plate; (2) spraying high silicon alloy particles of complete solid state collide on a surface of the decarburization annealed steel plate at a high speed of 500-900 m/s, so as to form a high silicon alloy coating on the surface of the decarburization annealed steel plate; (3) further coating a separation agent on the high silicon alloy coating from step (2) and drying; and (4) annealing.

2. The method for manufacturing a high silicon grain-oriented electrical steel plate according to claim 1, wherein in step (2), the high silicon alloy particles have a Si content of 10-50 wt %.

3. The method for manufacturing a high silicon grain-oriented electrical steel plate according to claim 1, wherein in step (2), the high silicon alloy particles have a particle size of 1-80 μm.

4. The method for manufacturing a high silicon grain-oriented electrical steel plate according to claim 1, wherein in step (2), the high silicon alloy particles are driven by jet flow of working gas to collide.

5. The method for manufacturing a high silicon grain-oriented electrical steel plate according to claim 4, wherein the working gas is nitrogen, helium or mixture of nitrogen and helium.

6. The method for manufacturing a high silicon grain-oriented electrical steel plate according to claim 4, wherein the high silicon alloy particles and the working gas are ejected via a nozzle.

7. The method for manufacturing a high silicon grain-oriented electrical steel plate according to claim 6, wherein a temperature of the high silicon alloy particles at an outlet of the nozzle is controlled between 80-500° C.

8. The method for manufacturing a high silicon grain-oriented electrical steel plate according to claim 6, wherein the working gas is heated to 200-700° C. and then is sent to the nozzle.

9. The method for manufacturing a high silicon grain-oriented electrical steel plate according to claim 6, wherein the nozzle is a Laval nozzle.

10. The method for manufacturing a high silicon grain-oriented electrical steel plate according to claim 6, wherein the outlet of the nozzle is set 10-60 mm away from the surface of the decarburization annealed steel plate.

11. The method for manufacturing a high silicon grain-oriented electrical steel plate according to claim 1, wherein the high silicon alloy coating is formed on one side or both sides of the surface of the decarburization annealed steel plate, and a thickness of the high silicon alloy coating satisfies the following formula:
T.sub.c/T.sub.s≥(x1−x2)/(x3−x1) wherein T.sub.c is a thickness of the high silicon alloy coating, in μm, when the high silicon alloy coating is formed on both sides of the decarburization annealed steel plate, the thickness of the high silicon alloy coating is the sum of coating thickness of two sides of the decarburization annealed steel plate; T.sub.s is a thickness of the decarburization annealed steel plate, in μm; x1 is a target silicon content of the high silicon grain-oriented electrical steel plate, in wt %; x2 is an initial silicon content of the decarburization annealed steel plate, in wt %; x3 is a silicon content of the high silicon alloy particles, in wt %.

12. The method for manufacturing a high silicon grain-oriented electrical steel plate according to claim 1, wherein a total oxygen content on the surface of the decarburization annealed steel plate is controlled to less than 700 ppm, an element C content is controlled to less than 50 ppm, and a dew point of the decarburization annealing is controlled between 40-65° C.

13. The method for manufacturing a high silicon grain-oriented electrical steel plate according to claim 1, wherein in step (4), implementing a secondary recrystallization at an annealing temperature above 1100° C. and in a N.sub.2+H.sub.2 atmosphere, and then heating the coated decarburization annealed steel plate at temperature above 1150° C. for at least 20 hours and in a reducing atmosphere having a H.sub.2 content over 90%, so as to achieve a uniform diffusion of element Si.

14. The method for manufacturing a high silicon grain-oriented electrical steel plate according to claim 1, wherein after the step (4), the method further comprises the steps of: applying an insulating coating and performing hot stretching leveling annealing.

Description

BRIEF DESCRIPTION OF DRAWINGS

(1) FIG. 1 is a schematic view showing a structure of a cold spray treatment device for realizing the cold spray treatment process in the method for manufacturing the high silicon grain-oriented electrical steel plate of the present invention in some embodiments.

DETAILED DESCRIPTION OF INVENTION

(2) The method for manufacturing the high silicon grain-oriented electrical steel plate of the present invention will be further explained and described in conjunction with the description of the drawings and specific embodiments. However, the explanation and the description do not improperly limit the technical solution of the present invention.

(3) FIG. 1 is a schematic view showing a structure of a cold spray treatment device for realizing the cold spray treatment process in the method for manufacturing the high silicon grain-oriented electrical steel plate of the present invention in some embodiments. It can be seen that the cold spray treatment device for realizing the cold spray treatment process in the manufacturing method of the present invention includes: a gas tank 3, a gas control device 4, a particle conveyor 5, a gas heater 6, a support roller 7 with temperature control function, a nozzle device 8, a particle recovery device 9, and a steel plate temperature detection device 10 for measuring temperature of steel plate.

(4) The specific working mode is described here. After a cold-rolled steel plate 1 undergoes decarburization annealing treatment in a decarburization annealing furnace 2, it enters the cold spray treatment device for treatment. The working gas in the gas tank 3 is transported to the gas heater 6 through the gas control device 4 (such as pipelines and valves); the working gas is heated by the gas heater 6 and then transported to the nozzle device 8, and is accelerated in the nozzle device 8 to form high speed jet. After the particle conveyor 5 injects the high silicon alloy particles into the nozzle device 8, the high silicon alloy particles are accelerated to collision velocity by the high speed jet. When particles collide with the surface of the decarburization annealed steel plate to be sprayed at high speed, a high silicon alloy coating is formed on the surface of the steel plate to be sprayed. The nozzle device 8 is fixedly arranged around the support roller 7 that is provided with temperature control function, so that the decarburization annealed steel plate to be sprayed is cold sprayed when running through the support roller 7. In addition, in some other embodiments, the nozzle device 8 can also move back and forth along the width direction of the steel plate to be sprayed. The high silicon alloy particles left after colliding with the surface of the steel plate to be sprayed at high speed are collected by the particle recovery device 9. After the steel plate is cold sprayed, it enters a separation agent coating system 11 for subsequent processing.

(5) Below, this technical solution will use specific example data to further describe the technical solution of this case and prove the beneficial effects of this case:

(6) The steel billets in Example 1-24 and Comparative Example 1-15 use the same mass percentage of chemical elements.

(7) Table 1 lists the mass percentages of the chemical elements of the steel billets of the high silicon grain-oriented electrical steel plates in Example 1-24 and Comparative Example 1-15.

(8) TABLE-US-00001 TABLE 1 (wt %, the balance is Fe and other unavoidable impurities) Si C Mn S Als N 3.15 0.046 0.11 0.005 0.030 0.0065

Examples 1-10 and Comparative Examples 1-5

(9) The high silicon grain-oriented electrical steel plates of Examples 1-10 and Comparative Examples 1-5 were prepared by the following steps of:

(10) (1) reheating the steel billet containing the mass percentage of each chemical element in Table 1 at 1050˜1215° C., then hot rolling and annealing at 1050˜1150° C. and pickling; thereafter rolling by a single stand mill;

(11) (2) in an atmosphere of the mixture of humid nitrogen and hydrogen with a dew point of 40˜65° C., performing a decarburization annealing with the cold-rolled steel plate at an annealing temperature of 820˜850; controlling the total oxygen content on the surface of the decarburization annealed steel plate to be sprayed to be less than 700 ppm, and controlling element C content to be less than 50 ppm;

(12) (3) ejecting the high silicon alloy particles and the heated working gas (nitrogen) of 400° C. onto the surface of the steel plate to be sprayed via a Laval nozzle with a conical inner surface so that making the high silicon alloy particles of complete solid state collide with the surface of the decarburization annealed steel plate to be sprayed at a speed of 500-900 m/s, thereinto, the high silicon alloy particles having a Si content of 10-50 wt %, the high silicon alloy particles having a particle size of 1-80 nm, the temperature of the high silicon alloy particles at the outlet of the nozzle being controlled as 300° C., and the outlet of the nozzle being set 25 mm away from the surface of the steel plate to be sprayed;

(13) (4) coating a separation agent MgO and kiln drying;

(14) (5) annealing: implementing a secondary recrystallization at an annealing temperature above 1100° C. in a N.sub.2+H.sub.2 atmosphere, and then evenly heating the steel plate at a temperature above 1150° C. for at least 20 hours in a reducing atmosphere having a H.sub.2 content over 90%;

(15) (6) removing unreacted components left on the surface of the annealed steel plate via acid, then applying an insulating coating containing phosphate and colloidal silicon dioxide and performing hot stretching leveling annealing, so as to obtain the finished steel plate.

(16) Table 2-1, Table 2-2, and Table 2-3 list the specific process parameters of the method for manufacturing the high silicon grain-oriented electrical steel plates of Examples 1-10 and Comparative Examples 1-5.

(17) TABLE-US-00002 TABLE 2-1 Step (2) Step(1) Total oxygen Element C Annealing Dew point content on the content on the Reheating temperature of temperature of Decarburization surface of steel surface of steel temperature of hot rolled decarburization annealing plate to be plate to be Serial number billet(° C.) plate (° C.) annealing (° C.) temperature (° C.) sprayed (ppm) sprayed (ppm) Example 1 1083 1086 45 840 503 15 Example 2 1190 1141 60 830 498 20 Example 3 1125 1078 54 830 398 39 Example 4 1198 1144 60 840 592 11 Example 5 1116 1097 52 820 481 25 Example 6 1095 1149 64 845 420 28 Example 7 1118 1055 45 840 357 41 Example 8 1080 1087 55 840 596 22 Example 9 1061 1140 65 835 440 13 Example 10 1146 1100 52 835 624 18 Comparative 1132 1094 339 Example 1 Comparative 1193 41 666 29 Example 2 Comparative 1215 1126 54 830 541 20 Example 3 Comparative 1056 62 825 634 41 Example 4 Comparative 1201 830 12 Example 5

(18) TABLE-US-00003 TABLE 2-2 Step(3) Si Particle Collision content in size of velocity of Thickness of Thickness of Target high silicon high silicon high silicon high silicon steel plate to silicon alloy particles alloy particles alloy particles alloy coating be sprayed content Spray (x1 − x2)/ Serial number (wt %) (μm) (m/s) Tc (μm) Ts (μm) (wt %) surface Tc/Ts (x3 − x1) Example 1 11.3 72 757 142 220 5.0 both sides 0.645 0.294 Example 2 18.6 46 849 65 285 5.0 both sides 0.228 0.136 Example 3 26.5 13 684 52 260 6.5 upper surface 0.200 0.168 Example 4 26.5 38 684 48.3 260 6.5 upper surface 0.186 0.168 Example 5 37.9 25 686 40.1 260 6.5 upper surface 0.154 0.107 Example 6 37.9 25 628 25.9 220 6.5 upper surface 0.118 0.107 Example 7 37.9 25 618 29.2 220 6.5 upper surface 0.133 0.107 Example 8 45.6 25 615 28.0 220 6.5 lower surface 0.127 0.086 Example 9 45.6 18 531 22.7 220 6.5 upper surface 0.103 0.086 Example 10 49.5 1.5 609 21.3 220 6.5 upper surface 0.097 0.078 Comparative 25 685 260 6.5 both sides 0.068 Example 1 Comparative 25 781 200 260 6.5 both sides 0.769 1.117 Example 2 Comparative 36.5 260 6.5 both sides 0.112 Example 3 Comparative 38.9 673 260 6.5 both sides 0.103 Example 4 Comparative 37.9 10 785 15.8 260 6.5 upper surface 0.107 Example 5
Among them, x1 is a target silicon content of the high silicon grain-oriented electrical steel plate, and its unit parameter is wt %; x2 is an initial silicon content of the steel plate to be sprayed, and its unit parameter is wt %; x3 is a silicon content of the high silicon alloy particles, and its unit parameter is wt %.

(19) TABLE-US-00004 TABLE 2-3 Step(5) Annealing temperature High of secondary temperature Uniform recrystal- H.sub.2 of uniform heating lization content heating time Serial number (° C.) (%) (° C.) (h) Example 1 1100 95 1175 36 Example 2 1100 95 1175 36 Example 3 1100 95 1200 28 Example 4 1120 95 1200 28 Example 5 1120 100 1200 28 Example 6 1120 100 1200 28 Example 7 1120 100 1220 24 Example 8 1150 100 1220 24 Example 9 1150 100 1220 24 Example 10 1150 100 1220 24 Comparative 1120 100 1200 28 Example 1 Comparative 1120 28 Example 2 Comparative 1120 100 1200 28 Example 3 Comparative 1120 100 1200 28 Example 4 Comparative 1120 100 1200 Example 5
The performances of the high silicon grain-oriented electrical steel plates of Examples 1-10 and Comparative Examples 1-5 were tested for iron loss P.sub.10/400, magnetic induction B.sub.8 and magnetostriction λ.sub.10/400. The test results are listed in Table 3.

(20) TABLE-US-00005 TABLE 3 Si content Magnetostriction in finished P.sub.10/400 B.sub.8 λ.sub.10/400 steel plate Serial number (W/Kg) (T) (×10.sup.−6) (wt %) Example 1 7.5 1.65 0.4 4.5 Example 2 7.0 1.57 0.3 5.6 Example 3 6.7 1.65 0.2 6.3 Example 4 6.6 1.47 0.1 6.7 Example 5 6.4 1.47 0.1 6.8 Example 6 7.3 1.67 0.3 6.0 Example 7 6.3 1.37 0.1 6.4 Example 8 7.0 1.40 0.1 6.7 Example 9 5.7 1.49 0.1 6.5 Example 10 5.9 1.37 0.1 6.9 Comparative — — — — Example 1 Comparative 8.7 1.91 0.7 3.5 Example 2 Comparative — — — — Example 3 Comparative — — — — Example 4 Comparative 8.9 1.91 0.6 3.7 Example 5

(21) It can be seen from Table 3 that all Examples 1-10 can obtain high silicon grain-oriented electrical steel plates with a silicon content higher than 4 wt %. The test results show that, compared with the finished steel plates with conventional silicon content, high-silicon steel plates have relatively low B.sub.8 due to the increase in silicon content, while high-silicon steel plates have excellent high-frequency magnetic properties with high-frequency iron loss P.sub.10/400 between 5.7˜7.5 W/kg and magnetostriction λ.sub.10/400 less than 0.4×10.sup.−6. Comparative Examples 1-5 cannot obtain the required high silicon grain-oriented electrical steel plates.

(22) In order to verify the quality and performance of the sprayed steel plate, this technical solution includes Examples 11-20 and Comparative Examples 6-12. In Examples 11-20 and Comparative Examples 6-12, the high silicon grain-oriented electrical steel plate were sprayed by the following steps of:

(23) (1) reheating the steel billet containing the mass percentage of each chemical element of Table 1 at 1050˜1215° C., then hot rolling and annealing at 1050˜1150° C. and pickling; thereafter cold rolling by a single stand mill to obtain a cold-rolled steel plate with a size of 0.285 mm;

(24) (2) in an atmosphere of the mixture of humid nitrogen and hydrogen with a dew point of 40˜65° C., performing a decarburization annealing with the cold-rolled steel plate at an annealing temperature of 820˜850; controlling the total oxygen content on the surface of the decarburization annealed steel plate to be sprayed to be less than 700 ppm, and controlling element C content to be less than 50 ppm, so as to obtain a decarburization annealed steel plate with a size of 0.285 mm;

(25) (3) ejecting the high silicon alloy particles and the heated working gas (such as nitrogen) onto the surface of the steel plate to be sprayed via a Laval nozzle with a conical inner surface so that making the high silicon alloy particles of complete solid state collide with the surface of the decarburization annealed steel plate to be sprayed at a speed of 500-900 m/s, thereinto, the high silicon alloy particles having a Si content of 37.9 wt %, the high silicon alloy particles having a particle size of 20 μm, the temperature of the high silicon alloy particles at the outlet of the nozzle being controlled as 80-500° C., and the outlet of the nozzle being set 10-60 mm away from the surface of the steel plate to be sprayed; the Si content in the final high silicon grain-oriented electrical steel plate being expected to be 6.5 wt %.

(26) Table 4-1 and Table 4-2 list the specific process parameters of the spraying and pre-spraying steps of Examples 11-20 and Comparative Examples 6-12.

(27) TABLE-US-00006 TABLE 4-1 Step (2) Step(1) Total oxygen Element C Annealing Dew point Decarburization content on the content on the Reheating temperature of temperature of annealing surface of steel surface of steel temperature of hot rolled decarburization temperature plate to be plate to be Serial number billet(° C.) plate (° C.) annealing(° C.) (° C.) sprayed (ppm) sprayed (ppm) Example 11 1208 1114 47 838 396 23 Example 12 1185 1144 59 823 514 9 Example 13 1068 1059 59 828 625 29 Example 14 1099 1083 58 848 558 21 Example 15 1125 1120 56 838 530 27 Example 16 1200 1059 51 833 634 15 Example 17 1076 1137 57 833 347 20 Example 18 1087 1101 48 833 529 7 Example 19 1161 1129 53 823 425 48 Example 20 1085 1132 56 838 586 23 Comparative 1134 1138 50 838 662 17 Example 6 Comparative 1060 1101 53 843 668 16 Example 7 Comparative 1103 1085 46 828 366 24 Example 8 Comparative 1091 1052 58 828 394 24 Example 9 Comparative 1199 1065 59 833 623 14 Example 10 Comparative 1196 1073 62 843 623 10 Example 11 Comparative 1084 1076 45 838 372 24 Example 12

(28) TABLE-US-00007 TABLE 4-2 Step(3) Distance between Collision Temperature of the outlet of the Thickness velocity high silicon nozzle and the of high of high alloy particles Temperature of surface of the silicon alloy Working silicon alloy at the outlet of working steel plate to Spray coating (x1 − x2)/ Serial number gas particles (m/s) the nozzle (° C.) gas(° C.) be sprayed (mm) surface Tc(μm) Tc/Ts (x3 − x1) Example 11 N.sub.2 500 500 200 25 upper surface 31.5 0.111 0.107 Example 12 N.sub.2 500 250 450 25 both sides 38.4 0.135 0.107 Example 13 N.sub.2 650  80 450 60 upper surface 37.5 0.132 0.107 Example 14 N.sub.2 650 125 300 45 upper surface 41.6 0.146 0.107 Example 15 N.sub.2 650 250 300 30 upper surface 50.3 0.176 0.107 Example 16 N.sub.2 + He 650 250 450 25 upper surface 49.6 0.174 0.107 Example 17 N.sub.2 650 450 500 10 upper surface 52.8 0.185 0.107 Example 18 He 750 300 450 25 lower surface 70.8 0.248 0.107 Example 19 He 750 300 550 25 upper surface 73.8 0.259 0.107 Example 20 He 900 300 700 25 both sides 130.8 0.459 0.107 Comparative N.sub.2 300 300 25 both sides unbonding — 0.107 Example 6 Comparative N.sub.2 300 300 25 both sides a little — 0.107 Example 7 bonding Comparative N.sub.2 630 25 both sides unbonding — 0.107 Example 8 Comparative N.sub.2 630 300 25 both sides 135.3 0.475 0.107 Example 9 Comparative N.sub.2 630 25 both sides 158.9 0.558 0.107 Example 10 Comparative N.sub.2 630 300 550 both sides 125.6 0.441 0.107 Example 11 Comparative N.sub.2 630 300 550 upper surface 25.8 0.091 0.107 Example 12
Among them, x1 is a target silicon content of the high silicon grain-oriented electrical steel plate, and its unit parameter is wt %; x2 is an initial silicon content of the steel plate to be sprayed, and its unit parameter is wt %; x3 is a silicon content of the high silicon alloy particles, and its unit parameter is wt %.

(29) The mass of the high silicon alloy coating of the high silicon grain-oriented electrical steel plates of Examples 11-20 and Comparative Examples 6-12 are listed in Table 5.

(30) TABLE-US-00008 TABLE 5 Serial number Mass of high silicon alloy coating Example 11 The coating thickness met the minimum requirements and was not oxidized Example 12 The coating thickness met the minimum requirements and was not oxidized Example 13 The coating thickness met the minimum requirements and was not oxidized Example 14 The coating thickness met the minimum requirements and was not oxidized Example 15 The coating thickness met the minimum requirements and was not oxidized Example 16 The coating thickness met the minimum requirements and was not oxidized Example 17 The coating thickness met the minimum requirements and was not oxidized Example 18 The coating thickness met the minimum requirements and was not oxidized Example 19 The coating thickness met the minimum requirements and was not oxidized Example 20 The coating thickness met the minimum requirements and was not oxidized Comparative unbonding Example 6 Comparative a little bonding, coating oxidation Example 7 Comparative unbonding Example 8 Comparative coating oxidation Example 9 Comparative coating oxidation Example 10 Comparative coating oxidation Example 11 Comparative coating was thin Example 12

(31) It can be seen from Table 5 that all Examples 11-20 can obtain required high silicon alloy coatings, while Comparative Examples 6-12 cannot obtain required high silicon alloy coatings.

(32) The high silicon grain-oriented electrical steel plates of Example 21-24 and Comparative Example 13-15 were prepared by the following steps of:

(33) (1) reheating the steel billet containing the mass percentage of each chemical element of Table 1 at 1050˜1215° C., then hot rolling and annealing at 1050˜1150° C. and pickling; thereafter cold rolling by a single stand mill to obtain a steel plate with the target thickness;

(34) (2) in an atmosphere of the mixture of humid nitrogen and hydrogen with a dew point of 40˜65° C., performing a decarburization annealing with the cold-rolled steel plate at an annealing temperature of 820˜850; controlling the total oxygen content on the surface of the decarburization annealed steel plate to be sprayed to be less than 700 ppm, and controlling element C content to be less than 50 ppm;

(35) (3) ejecting the high silicon alloy particles and the heated working gas (such as nitrogen) onto the surface of the steel plate to be sprayed via a Laval nozzle with a conical inner surface so that making the high silicon alloy particles of complete solid state collide with the surface of the decarburization annealed steel plate to be sprayed at a speed of 650 m/s, thereinto, the high silicon alloy particles having a Si content of 37.9 wt %, the high silicon alloy particles having a particle size of 20 μm, the temperature of the high silicon alloy particles at the outlet of the nozzle being controlled as 250° C., and the outlet of the nozzle being set 25 mm away from the surface of the steel plate to be sprayed;

(36) (4) coating a separation agent MgO and kiln drying;

(37) (5) annealing: implementing a secondary recrystallization at an annealing temperature above 1100° C. in a N.sub.2+H.sub.2 atmosphere, and then evenly heating the steel plate at a temperature above 1150° C. for at least 20 hours in a reducing atmosphere having a H.sub.2 content over 90%;

(38) (6) removing unreacted components left on the surface of the annealed steel plate via acid, then applying an insulating coating containing phosphate and colloidal silicon dioxide and performing hot stretching leveling annealing, so as to obtain the finished steel plate.

(39) Table 6-1, Table 6-2, and Table 6-3 list the specific process parameters of the method for manufacturing the high silicon grain-oriented electrical steel plates of Examples 21-24 and Comparative Examples 13-15.

(40) TABLE-US-00009 TABLE 6-1 Step (2) Step (1) Total oxygen Element C Annealing Dew point content on the content on the Reheating temperature of temperature of Decarburization surface of steel surface of steel temperature of hot rolled decarburization annealing plate to be plate to be Serial number billet(° C.) plate (° C.) annealing (° C.) temperature (° C.) sprayed (ppm) sprayed (ppm) Example 21 1125 1060 45 825 325 25 Example 22 1090 1060 55 825 423 27 Example 23 1190 1070 60 830 567 11 Example 24 1100 1115 65 835 665 36 Comparative 1150 1100 840 19 Example 13 Comparative 1130 1150 65 830 20 Example 14 Comparative 1180 1080 35 830 403 Example 15

(41) TABLE-US-00010 TABLE 6-2 Step(3) Thickness of Target Thickness of Temperature of steel plate to silicon high silicon Working working be sprayed content Spray alloy coating (x1 − x2)/ Serial number gas gas(° C.) Ts(μm) (wt %) surface Tc(μm) Tc/Ts (x3 − x1) Example 21 N.sub.2 480 220 6.5 upper surface 47 0.213 0.107 Example 22 N.sub.2 650 220 6.5 upper surface 28 0.130 0.107 Example 23 He 340 260 6.5 both sides 78 0.298 0.107 Example 24 He 380 260 6.5 both sides 75 0.289 0.107 Comparative N.sub.2 340 220 6.5 upper surface 45 0.204 0.107 Example 13 Comparative N.sub.2 380 220 6.5 upper surface 53 0.242 0.107 Example 14 Comparative He 340 260 6.5 both sides 61 0.236 0.107 Example 15
Among them, x1 is a target silicon content of the high silicon grain-oriented electrical steel plate, and its unit parameter is wt %; x2 is an initial silicon content of the steel plate to be sprayed, and its unit parameter is wt %; x3 is a silicon content of the high silicon alloy particles, and its unit parameter is wt %.

(42) TABLE-US-00011 TABLE 6-3 Step(5) Annealing temperature High of secondary temperature Uniform recrystal- H.sub.2 of uniform heating lization content heating time Serial number (° C.) (%) (° C.) (h) Example 21 1120 92 1175 32 Example 22 1140 92 1175 32 Example 23 1120 100 1200 28 Example 24 1140 100 1200 28 Comparative 1120 92 1175 32 Example 13 Comparative 1140 92 1175 32 Example 14 Comparative 1120 100 1200 28 Example 15
The content of element Si in the finished steel plates of the high silicon grain-oriented electrical steel plates of Examples 21-24 and Comparative Examples 13-15 are listed in Table 7.

(43) TABLE-US-00012 TABLE 7 Content of element Si in finished Serial number steel plate (wt %) Example 21 6.7 Example 22 6.1 Example 23 6.5 Example 24 6.7 Comparative 3.9 Example 13 Comparative 3.7 Example 14 Comparative 6.7 Example 15

(44) It can be seen from Table 7 that all Examples 21-24 can obtain high silicon grain-oriented electrical steel plates with required Si content, while the silicon content in the finished steel plates of comparative examples 13 and 14 are less than 4 wt %. The C content on the surface of the decarburization annealed steel plate to be sprayed of Comparative Example 15 is higher than 50 ppm, and Comparative Examples 13-15 cannot obtain required high silicon grain-oriented electrical steel plates.

(45) It should be noted that the prior art part of the protection scope of the present invention is not limited to the embodiments given in this application document, and all prior arts that do not contradict the solution of the present invention, including but not limiting the previous patent documents, prior publications, prior public use, etc., can all be included in the protection scope of the present invention.

(46) In addition, the combination of various technical features in this case is not limited to the combination described in the claims of this case or the combination described in the specific embodiments. All technical features described in this case can be freely combined or integrated in any way, unless conflicts arise among them.

(47) It should also be noted that the embodiments listed above are only specific embodiments of the present invention. Obviously, the present invention is not limited to the above embodiments, and the subsequent similar changes or modifications that can be directly derived from or easily associated with the disclosure of the present invention by those skilled in the art, should fall within the protection scope of the present invention.