PUPIL STOP FOR AN ILLUMINATION OPTICAL UNIT OF A METROLOGY SYSTEM
20220342317 · 2022-10-27
Inventors
Cpc classification
G03F7/70133
PHYSICS
G01B2210/56
PHYSICS
International classification
Abstract
A pupil stop serves for use in an illumination optical unit of a metrology system for determining, as a result of illumination and imaging under illumination and imaging conditions corresponding to those of an optical production system, an aerial image of an object to be measured. The pupil stop has two pole passage openings for specifying a respective pole of an illumination of the illumination optical unit specified by the pupil stop. In each case at least one stop web passes through the respective pole passage opening and consequently divides the pole passage opening into a plurality of partial pole openings. This yields a pupil stop with which an accuracy of a convergence of the illumination and imaging conditions of the optical production system to the illumination and imaging conditions of the optical measurement system can be improved.
Claims
1. A pupil stop for an illumination optical unit of a metrology system for determining, as a result of illumination and imaging under illumination and imaging conditions corresponding to those of an optical production system, an aerial image of an object to be measured, comprising at least two pole passage openings for specifying a respective pole of a multipole illumination of the illumination optical unit specified by the pupil stop, comprising in each case at least one stop web, which passes through the respective pole passage opening and consequently divides the pole passage opening into a plurality of partial pole openings.
2. The pupil stop of claim 1, wherein the stop webs are arranged symmetrically with respect to a center of the pupil stop.
3. The pupil stop of claim 1, wherein exactly one stop web is arranged in each pole passage opening.
4. The pupil stop of claim 1, wherein the pole passage openings each have a first, greater aperture width (W.sub.G) and a second, smaller aperture width (W.sub.K) in two mutually perpendicular directions (σ.sub.y, σ.sub.x) in an arrangement plane, an aspect ratio (W.sub.G/W.sub.K) between the greater aperture width (W.sub.G) and the smaller aperture width (W.sub.K) being greater than 2, with the stop webs in each case extending along the second, smaller aperture width (W.sub.K).
5. The pupil stop of claim 1, wherein two of the pole passage openings are spaced apart from one another along a dipole direction (x), the stop webs extending along the dipole direction (x).
6. An illumination optical unit of a metrology system for determining, as a result of illumination and imaging under illumination and imaging conditions corresponding to those of an optical production system, an aerial image of an object to be measured, comprising a pupil stop according to claim 1.
7. A metrology system for determining, as a result of illumination and imaging under illumination and imaging conditions corresponding to those of an optical production system, an aerial image of an object to be measured, comprising an illumination optical unit according to claim 6, an imaging optical unit for imaging a portion of the object into a measurement plane, and a spatially resolving detection device, arranged in the measurement plane.
8. The metrology system of claim 7, wherein the imaging optical unit has an image-side numerical aperture which is greater than 0.5.
9. The pupil stop of claim 1, wherein the stop web has a constant transverse dimension across its web extension.
10. The pupil stop of claim 2, wherein exactly one stop web is arranged in each pole passage opening.
11. The pupil stop of claim 2, wherein the pole passage openings each have a first, greater aperture width (W.sub.G) and a second, smaller aperture width (W.sub.K) in two mutually perpendicular directions (σ.sub.y, σ.sub.x) in an arrangement plane, an aspect ratio (W.sub.G/W.sub.K) between the greater aperture width (W.sub.G) and the smaller aperture width (W.sub.K) being greater than 2, with the stop webs in each case extending along the second, smaller aperture width (W.sub.K).
12. The pupil stop of claim 3, wherein the pole passage openings each have a first, greater aperture width (W.sub.G) and a second, smaller aperture width (W.sub.K) in two mutually perpendicular directions (σ.sub.y, σ.sub.x) in an arrangement plane, an aspect ratio (W.sub.G/W.sub.K) between the greater aperture width (W.sub.G) and the smaller aperture width (W.sub.K) being greater than 2, with the stop webs in each case extending along the second, smaller aperture width (W.sub.K).
13. The pupil stop of claim 2, wherein two of the pole passage openings are spaced apart from one another along a dipole direction (x), the stop webs extending along the dipole direction (x).
14. The pupil stop of claim 3, wherein two of the pole passage openings are spaced apart from one another along a dipole direction (x), the stop webs extending along the dipole direction (x).
15. The illumination optical unit of claim 6, wherein the stop webs are arranged symmetrically with respect to a center of the pupil stop.
16. The illumination optical unit of claim 6, wherein exactly one stop web is arranged in each pole passage opening.
17. The metrology system of claim 7, wherein the stop webs are arranged symmetrically with respect to a center of the pupil stop.
18. The metrology system of claim 7, wherein exactly one stop web is arranged in each pole passage opening.
19. The metrology system of claim 7, wherein the pole passage openings each have a first, greater aperture width (W.sub.G) and a second, smaller aperture width (W.sub.K) in two mutually perpendicular directions (σ.sub.y, σ.sub.x) in an arrangement plane, an aspect ratio (W.sub.G/W.sub.K) between the greater aperture width (W.sub.G) and the smaller aperture width (W.sub.K) being greater than 2, with the stop webs in each case extending along the second, smaller aperture width (W.sub.K).
20. The metrology system of claim 7, wherein two of the pole passage openings are spaced apart from one another along a dipole direction (x), the stop webs extending along the dipole direction (x).
Description
BRIEF DESCRIPTION OF DRAWINGS
[0020] An exemplary embodiment of the invention is explained in greater detail below with reference to the drawings. In said drawings:
[0021]
[0022]
[0023]
DETAILED DESCRIPTION
[0024]
[0025] In order to facilitate the representation of positional relationships, a Cartesian xyz-coordinate system is used hereinafter. The x-axis in
[0026] The illumination system 4 includes an EUV light source 5 and an illumination optical unit 6, depicted schematically in each case. The light source can be a laser plasma source (LPP; laser produced plasma) or a discharge source (DPP; discharge produced plasma). In principle, a synchrotron-based light source can also be used, for example a free electron laser (FEL). A used wavelength of the illumination light 1 can lie in the range of between 5 nm and 30 nm. In principle, in the case of a variant of the projection exposure apparatus 2, it is also possible to use a light source for another used light wavelength, for example for a used wavelength of 193 nm.
[0027] The illumination light 1 is conditioned in the illumination optical unit 6 of the illumination system 4 such that a specific illumination setting of the illumination is provided, that is to say a specific illumination angle distribution. Said illumination setting corresponds to a specific intensity distribution of the illumination light 1 in an illumination pupil of the illumination optical unit of the illumination system 4. A pupil stop 7 arranged in a pupil plane 8 of the illumination optical unit 6 serves to provide the respective illumination setting.
[0028] The pupil stop 7 is held in a stop holder 7a. This may be a quick-change stop holder which facilitates a replacement of the pupil stop 7 currently used in the illumination with at least one change pupil stop. Such a quick-change holder can comprise a cartridge having a plurality of pupil stops 7, in particular different pupil stops, for specifying various illumination settings.
[0029] An image-side numerical aperture of the imaging optical unit 3 is 0.7. Depending on the embodiment of the imaging optical unit 3, the image-side numerical aperture is greater than 0.5 and can also be 0.55, 0.6, 0.65, 0.75, 0.8 or even greater. This image-side numerical aperture of the imaging optical unit 3 is adapted to the image-side numerical aperture of the production projection exposure apparatus to be simulated by the imaging by the metrology system. Accordingly, the illumination setting set by the dipole pupil stop 7 is also adapted to a production illumination setting of this production projection exposure apparatus.
[0030]
[0031] The dipole pupil stop 7 has two pole passage openings 10, 11, the entire outer contour of which is approximately segment shaped. The pole passage opening 10 to the left in
[0032] Edge contours of the pole passage openings 10, 11 are mirror symmetrical in relation to a plane of symmetry 13 which is parallel to the yz-plane and which has a coordinate of σ.sub.x=0, and so it is sufficient to describe the edge form of one of the two pole passage openings 10, 11 below.
[0033] The two pole passage openings 10, 11 serve to specify a respective pole of a dipole illumination of the illumination optical unit 6 specified by the dipole pupil stop 7. The illumination light 1 can pass through the pupil plane 8 by way of the two pole passage openings 10, 11. The illumination light 1 is blocked by the dipole pupil stop 7 away from the pole passage openings 10, 11. This blocking can be implemented by absorption and/or reflection and/or scattering of the illumination light 1.
[0034] An edge portion 14 of the pole passage opening 10 opposite the edge portion 12 in the direction of the negative σ.sub.x-coordinate has a rectilinear design and extends approximately at the coordinate σ.sub.x=0.75.
[0035] In the region of maximum positive and negative σ.sub.x-coordinates, the two edge portions 12, 14 abut one another not by way of a sharp corner but by way of a bevel portion 15, 16. These bevel portions 15, 16 are short in comparison with the other edge portions 12, 14 and are located in the region of the +0.7 and −0.7 σ.sub.x-coordinates.
[0036] Each pole passage opening 10, 11 has a stop web 17, 18, which passes through the respective pole passage opening 10, 11 and consequently divides the respective pole passage opening 10, 11 into a plurality of partial pole openings, specifically two partial pole openings 10a, 10b and 11a, 11b.
[0037] The two stop webs 17, 18 extend along the σ.sub.x-coordinate level with the σ.sub.y=0 coordinate. On account of the mirror symmetry of the pole passage openings 10, 11, the stop webs 17, 18 also extend symmetrically with respect to the plane of symmetry 13, in which the center Z of the pupil 9 is located. The center Z of the pupil 9 coincides with a center, that is to say a stop centroid, of the dipole pupil stop 7.
[0038] In the embodiment according to
[0039] In the pupil plane 8, that is to say in an arrangement plane of the dipole pupil stop 7, the pole passage openings 10, 11 have a greater aperture width W.sub.G along the σ.sub.y-coordinate and have a second, smaller aperture width W.sub.K along the pupil coordinate σ.sub.x perpendicular thereto. A pupil coordinate extent σ.sub.x is approximately 1.4 (−0.7 to +0.7) for the larger aperture width W.sub.G and, in the case of the smaller aperture width W.sub.K, the aperture width in the direction of the ac pupil coordinate is approximately 0.4 (−0.8 to −0.4 or +0.4 to +0.8). An aspect ratio between the greater aperture width W.sub.G and the smaller aperture width W.sub.K is approximately 3.5, and is therefore greater than 2.
[0040] The stop webs 17, 18 each extend along the smaller aperture width W.sub.K.
[0041] A thickness of the stop webs 17, 18 in the direction of the σ.sub.y pupil coordinate is approximately 0.05 (σ.sub.y=−0.025 to +0.025).
[0042] The two pole passage openings 10, 11 specify an x-dipole, that is to say an x-dipole illumination setting of the illumination optical unit 6. Thus, the x-direction is a dipole direction of this setting. The stop webs 17, 18 extend along this dipole direction x.
[0043] The two pole passage openings 10, 11 are spaced apart from one another along the dipole direction x, to be precise, expressed in values of the a-coordinate, by approximately 0.8 (σ.sub.x=−0.4 to +0.4).
[0044] Instead of an x-dipole, a pupil stop in the style of the dipole pupil stop 7 may also be embodied as a quadrupole pupil stop, for example in the style of a C-quad. An embodiment of a C-quad with non-divided pole passage openings is known from FIG. 3a in WO 2012/028303 A1.
[0045] In
[0046]
[0047] Below, the dipole pupil stop 20 is only described where it differs from the dipole pupil stop 7. Component parts and functions which were already explained above in conjunction with the pupil stop 7 have the same reference signs and are not discussed again in detail.
[0048] In the case of the dipole pupil stop 20, the stop webs 17, 18 have a smaller σ.sub.y-extent, which is approximately half the σ.sub.y-extent of the stop webs 17, 18 in the embodiment according to
[0049] Moreover,
[0050] ys denotes the extent of the stop webs 17, 18 in the σ.sub.y-direction.
[0051] xm denotes the distance between the rectilinear edge portion 14 and the center coordinate σ.sub.x=0.
[0052] d denotes a distance between the partial circle-shaped edge portion 12 of the pole passage opening 10 and the most distant pupil point with the σ.sub.x/σ.sub.x-coordinates [1, 0].
[0053] The metrology system 2 is used as follows: Initially, the imaging optical unit 3 on the one hand and—by way of the respective pupil stop 7 or 20 on the other hand—an image-side numerical aperture, and an illumination setting are set, the latter corresponding to the best possible extent to the illumination and imaging conditions of a production projection exposure apparatus to be measured.
[0054] With the illumination setting that is respectively set, the illumination light 1 illuminates an object field 21 of an object plane 22 of the metrology system 2. Thus, a lithography mask 23, which is also referred to as a reticle, is arranged in the object plane 22 as an object to be illuminated during the production as well. Above the object plane 22, which extends parallel to the xy-plane, a structure section of the lithography mask 23 is shown schematically in
[0055] The illumination light 1 is reflected from the lithography mask 23, as depicted schematically in
[0056] Within the imaging optical unit 3, the illumination or imaging light 1 propagates between the entrance pupil plane 25 and an exit pupil plane 26. A circular exit pupil 27 of the imaging optical unit 3 lies in the exit pupil plane 26. The imaging optical unit 3 can have an anamorphic embodiment and generates the circular exit pupil 27 from the round or elliptic entrance pupil 8.
[0057] The imaging optical unit 3 images the object field 21 into a measurement or image field 28 in an image plane 29 of the projection exposure apparatus 2. Below the image plane 29,
[0058] The imaging light intensities I (x, y, z.sub.W) at the various z-values around the image plane 29 are also referred to as a 3D aerial image of the projection exposure apparatus 2.
[0059] A spatially resolving detection device 30, which can be a CCD camera or a CMOS camera, is arranged in the image plane 29, which represents a measurement plane of the metrology system 2. The detection device 30 registers the imaging light intensities I (x, y, z.sub.W).
[0060] The imaging optical unit 3 can have a magnifying imaging scale greater than 100 when imaging the object field 21 into the image field 28. This imaging scale can be greater than 200, can be greater than 250, can be greater than 300, can be greater than 400, can be greater than 500. The imaging scale of the imaging optical unit 3 is regularly less than 2000.
[0061] The shadowing within the pole passage openings 10, 11 as a result of the stop webs 17, 18 leads to the dipole illumination within the metrology system 2 better corresponding to a corresponding dipole illumination of the production system to which there should be convergence in respect of the illumination and imaging conditions. Surprisingly, this applies despite the fact that the production system lacks corresponding webs or shadowing within the poles of the dipole illumination.
[0062] In particular, good correspondence can be achieved in respect of a NILS (normalized image log slope, derivative of an aerial image intensity curves at an edge position of an imaged structure) parameter. With regard to the definition of this NILS parameter, reference is made to US 2015/0 042 974 A1, herein incorporated by reference.
[0063] It is also possible to reduce deviations (ΔCD) between the critical dimensions (CD) which are able to be imaged firstly with the imaging optical unit of the metrology system and secondly with the imaging optical unit of the production system. These deviations are typically specified normalized to the critical dimension that can be imaged by the production system. The reduction in the deviation applies, in particular, to the value ΔCD.sub.V, that is to say to the change in the critical dimension in the case of structures extending vertically (in the y-direction). In particular, the value ΔCD.sub.V can be better than 5%.
[0064] In the context of the definition of the parameter CD, reference is made to U.S. Pat. No. 9,176,390 B, herein incorporated by reference.
[0065] Particularly deviations in a proportionality between a change in the critical dimension on the wafer in relation to the change in the critical dimension on the mask:
MEEF=ΔCD.sub.Wafer/ΔCD.sub.Mask
can be advantageously reduced by the use of the dipole pupil stop 7 or 20.
[0066] The normalized value:
can advantageously be kept small.
[0067] This applies, in particular, to the vertical component ΔMEEF.sub.V, which can be kept smaller than 20%, smaller than 15% and even smaller than 10%. A measuring error ΔCD of the metrology system 2 of 1% of the critical target dimension arises for a value ΔMEEF of 10% and a minimum resolvable defect size ΔCD=10% of a critical target dimension.
[0068] While this specification contains many implementation details, these should not be construed as limitations on the scope of the invention or of what can be claimed, but rather as descriptions of features specific to particular embodiments of the invention. Certain features that are described in this specification in the context of separate embodiments can also be implemented in combination in a single embodiment. Conversely, various features that are described in the context of a single embodiment can also be implemented in multiple embodiments separately or in any suitable subcombination. The separation of various system components in the embodiments described above should not be understood as requiring such separation in all embodiments. Moreover, although features can be described above as acting in certain combinations and even initially claimed as such, one or more features from a claimed combination can in some cases be excised from the combination, and the claimed combination can be directed to a subcombination or variation of a subcombination.
[0069] Thus, particular embodiments of the invention have been described. Other embodiments are within the scope of the following claims.