Facility for microwave treatment of a load

Abstract

The invention relates to a facility (1) for microwave treatment of a load, including: at least one application device (30); at least one solid-state generator (4) in the field of microwaves, connected to at least one application device by a means for guiding (5) the electromagnetic wave; at least one frequency adjustment system (40) designed for adjusting the frequency of the wave produced by the corresponding generator (4); a measurement system (31) for the or each application device (30), designed for measuring the power reflected P.sub.R(i) by the application device (30); an automated control means (6) connected to each frequency adjustment system (40) and to each measurement system (31) in order to control the adjustment of the frequency f.sub.(i) of the electromagnetic wave according to the reflected power, in order to adjust the reflected power P.sub.R(i) and/or to adjust the transmitted power P.sub.T(i).

Claims

1. A method for the microwave treatment of a plasma-type load for producing a plasma in a treatment chamber, comprising the following steps: generating at least one electromagnetic wave in the microwave range using at least one solid-state generator; providing several elementary plasma sources, each comprising one application device for applying an electromagnetic wave to the inside of the treatment chamber, and a measurement system for measuring a reflected powers P.sub.R(i) which is a power reflected on the corresponding application device due to impedance mismatch; guiding the electromagnetic wave from the at least one solid-state generator to the application devices of the elementary plasma sources without using any matching device between the solid-state generator and each application device; application by each application device of the electromagnetic wave on the plasma-type load to the inside of the treatment chamber; wherein the method further comprises a step for automated adjustment of the frequency f.sub.(i) of the at least one electromagnetic wave so as to minimize the reflected powers P.sub.R(i) on the application devices measured by the measurement systems, with the following steps: p1) measuring by the measurement systems, for the application devices, the reflected power P.sub.R(i) on the application devices; and p2) varying the frequency f.sub.(i) of the electromagnetic wave produced by the generator, until the reflected powers P.sub.R(i) measured on the application devices reaches minimum so as to perform impedance matching on the application devices only by varying said frequency f.sub.(i) such as said method performs impedance matching without using any matching device.

2. The method according to claim 1, wherein the generating step comprises generating at least two electromagnetic waves using at least two generators, the guiding step comprises guiding each electromagnetic wave intended for at least one application device, and the adjustment step comprises adjusting the frequency of each electromagnetic wave independently of one another.

3. The method according to claim 1, wherein the generating step comprises generating N electromagnetic waves using N generators, the guiding step comprises guiding the N electromagnetic waves intended for N application devices, where N is an integer greater than 2, and the adjusting step comprises regulating the frequency of each electromagnetic wave independently of one another.

4. The method according to claim 1, wherein the minimum of the measured reflected power P.sub.R(i) is equal or close to zero.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) Other features and advantages of the present invention will appear upon reading the following detailed description of several non-limiting embodiments, done in reference to the appended figures, in which:

(2) FIG. 1, already discussed, is a diagrammatic perspective and partial cross-sectional view of a reactor for a known microwave treatment facility by plasma production;

(3) FIG. 2, already discussed, is a partial diagrammatic view of a known microwave treatment facility by plasma production;

(4) FIG. 3, already discussed, is a partial diagrammatic view of another known microwave treatment facility by plasma production;

(5) FIG. 4, already discussed, is a partial diagrammatic view of another known microwave treatment facility by plasma production;

(6) FIG. 5 is a diagrammatic view of a first microwave treatment facility according to the invention;

(7) FIG. 6 is a diagrammatic view of a second microwave treatment facility according to the invention;

(8) FIG. 7 is a diagrammatic view of a third microwave treatment facility according to the invention;

(9) FIG. 8 is a diagrammatic view of a fourth microwave treatment facility according to the invention;

(10) FIG. 9 is a diagrammatic view of a fifth microwave treatment facility according to the invention;

(11) FIG. 10 is a diagrammatic view of a sixth microwave treatment facility according to the invention;

(12) FIG. 11 is a diagrammatic view of a seventh microwave treatment facility according to the invention; and

(13) FIG. 12 is a diagrammatic view of an eighth microwave treatment facility according to the invention.

DETAILED DESCRIPTION

(14) The following description pertains to a microwave treatment facility 1 for treating a plasma-type load, in other words, a facility for producing a plasma in a treatment chamber. It is of course possible to consider using the facility 1 for other applications, for example with a treatment chamber of the chemical reactor type containing a solid, liquid and/or gaseous product to be treated by microwaves, or in the context of medical treatment by applying microwave radiation on part of the body to be treated.

(15) In a first embodiment of the invention illustrated in FIG. 5, the plasma production facility 1 includes:

(16) a reactor 2 having a treatment chamber 20 in the volume of which the plasma is produced;

(17) an elementary plasma source 3 comprising an application device 30 applying an electromagnetic wave in the microwave range to the inside of the treatment chamber 20, as well as a measurement system 31 for measuring the power reflected by the application device 30;

(18) an electromagnetic wave generator 4 in the microwave range, of the solid-state type, connected to the application device 30 by means 5 for guiding the electromagnetic energy, the generator 4 comprising a frequency adjustment system 40 designed to adjust the frequency of the wave between approximately 2400 and 2500 MHz, or even in another predetermined frequency range; and

(19) a controller 6 connected at the input to the measurement system 31 and at the output to the frequency adjustment system 40.

(20) For the rest of the description and the other embodiments:

(21) the or each application device 30 is of the coaxial applicator type, but the invention is not limited to such a coaxial applicator, and other types of devices for applying microwave power may be considered, for example such as a discharge tube (surfatron, Evenson cavity, downstream source, semi-metallic plasma torch, dielectric tube, etc.), an antenna, a waveguide with a dielectric window, etc.

(22) the or each generator 4 is of the solid-state electromagnetic wave generator type, also called transistor generator, which has the advantage of making it possible to monitor the frequency of the electromagnetic wave, manually or automatically, in its operating frequency range (unlike a magnetron);

(23) the or each guide means 5 is made in the form of a coaxial cable that is particularly well suited to be connected directly on a solid-state generator 4, although other forms of guide means may be considered, for example such as waveguides.

(24) The measurement system 31 may be made up of an insulator combining a circulator and a load. When the elementary source emits reflective power, the circulator deflects that power onto the load. By coupling, a fraction of that power is debited and measured. By knowing the debited fraction (or attenuation coefficient), it is possible to deduce the reflected power therefrom. The measurement system may also be a system for measuring parameters S, and in particular S1.1.

(25) The controller 6 is designed for six operating modes.

(26) In a first operating mode, the controller 6:

(27) receives, as input, the reflected power measurement P.sub.RM from the measurement system 31;

(28) monitors (or varies) the frequency f of the electromagnetic wave produced by the generator 4 until the reflected power P.sub.R measured by the application device substantially reaches a first reference value V.sub.R.

(29) In other words, the controller 6 finds the frequency f for which the reflected power P.sub.R is equivalent to the first reference value V.sub.R; that first reference value V.sub.R may be set substantially at a zero value, or at least at the minimum accessible value, so as to match the impedance between the plasma and the elementary source 3.

(30) In a second operating mode, the controller 6:

(31) receives, as input, the reflected power measurement P.sub.R from the measurement system 31;

(32) receives, as input, the value of the incident power P.sub.IN on the source, that value coming from the generator 4 to which the controller 6 is connected;

(33) calculating a set point V.sub.CR of the reflected power P.sub.R corresponding to a transmitted power P.sub.T equal to a second reference value V.sub.T, i.e., VC.sub.R=P.sub.INV.sub.T;

(34) monitoring (or varying) the frequency f of the electromagnetic wave produced by the generator 4 until the reflected power P.sub.R measured by the application device substantially reaches the set point V.sub.CR.

(35) Thus, the reflected power P.sub.R is subjugated to the set point VC.sub.R to regulate the transmitted power P.sub.T to the second reference value V.sub.T. In other words, the controller 6 finds the frequency f for which P.sub.T=V.sub.T.

(36) In a third operating mode, the controller 6:

(37) receives, as input, the reflected power measurement P.sub.R from the measurement system 31;

(38) receives, as input, the value of the incident power P.sub.IN on the source, said value coming from the generator 4 to which the controller 6 is connected;

(39) monitoring (or varying) both the frequency f and the incident power P.sub.IN until the reflected power P.sub.R measured by the application device substantially reaches a first reference value V.sub.R.

(40) In other words, the controller 6 finds a pair (frequency f, incident power P.sub.IN) for which the reflected power P.sub.R is equivalent to the first reference value V.sub.R.

(41) For example, for the reflected power P.sub.R to reach a first reference value V.sub.R that is substantially zero, it is possible to consider first that the controller 6 seeks a frequency for which the reflected power P.sub.R is minimal but still greater than zero, and secondly, the controller 6 seeks the incident power P.sub.IN for which the reflected power P.sub.R is substantially equal to zero; the incident power P.sub.IN only being adjusted if the first reference value V.sub.R cannot be reached by playing only on the frequency.

(42) In a fourth operating mode, the controller 6:

(43) receives, as input, the reflected power measurement P.sub.R from the measurement system 31;

(44) receives, as input, the value of the incident power P.sub.IN on the source, that value coming from the generator 4 to which the controller 6 is connected;

(45) monitoring (or varying) both the frequency f and the incident power P.sub.IN until the transmitted power P.sub.T=P.sub.INP.sub.R is substantially equal to a second reference value V.sub.T.

(46) In other words, the controller 6 finds a pair (frequency f, incident power P.sub.IN) for which P.sub.T=V.sub.T. For example, for the transmitted power P.sub.T to reach the second reference value V.sub.T, it is possible to consider that first, the controller 6 seeks a frequency for which the transmitted power P.sub.T comes closest to the second reference value V.sub.T (without seeking to minimize the reflected power P.sub.R) and, secondly, the controller 6 seeks the incident power P.sub.IN for which the transmitted power P.sub.T is equal to the second reference value V.sub.T; the incident power P.sub.IN only being adjusted if the second reference value V.sub.T cannot be reached only by playing on the frequency.

(47) In a fifth operating mode, the controller 6:

(48) receives, as input, the reflected power measurement P.sub.RM coming from the measurement system 31;

(49) receives, as input, the value of the incident power P.sub.IN on the source, that value coming from the generator 4 to which the controller 6 is connected;

(50) monitoring (or varying) the frequency f until the reflected power P.sub.R substantially reaches a first reference value V.sub.R, preferably until the reflected power P.sub.R reaches a minimum;

(51) monitoring (or varying) the incident power P.sub.IN until the transmitted power P.sub.T=P.sub.INP.sub.R is substantially equal to a second reference value V.sub.T.

(52) In other words, the controller 6 finds a pair (frequency f, incident power P.sub.IN) for which P.sub.R=V.sub.R (P.sub.R=accessible minimum) and P.sub.T=V.sub.T. For the monitoring step of the frequency, it is possible to consider the controller 6 starting from the initial frequency, then varying the frequency f of the side where the reflected power P.sub.R decreases until it finds a minimum.

(53) In a sixth operating mode, the facility is an Electron Cyclotron Resonance (ECR) plasma production facility. In that case, the elementary source 3 further comprises a magnetic structure (not shown) designed to create a magnetic resonance field which, combined with the electromagnetic wave, makes it possible to produce an Electronic Cyclotron Resonance (ECR) plasma.

(54) In this sixth operating mode, the controller 6:

(55) calculates a frequency instruction Cf.sub.(i) for the or each frequency adjustment system 40, corresponding to a predetermined value of the resonance surface of the or each elementary plasma source 3; and

(56) monitors, for each elementary source 3, the frequency adjustment system 40 in question in order to subjugate the frequency f.sub.(i) of the electromagnetic wave produced by the or each generator 4 to the corresponding set point Cf.sub.(i) so that the resonance surface of the or each elementary plasma source 3 reaches the corresponding predetermined value.

(57) In a second embodiment of the invention illustrated in FIG. 6, the plasma production facility 1 is identical to that of the first embodiment of FIG. 5, with the exception that it further comprises an impedance matching device 7 positioned upstream from the applicator 30.

(58) This impedance matching device 7 thus makes it possible to perform a first impedance matching, optionally mean, with an adjustment for the operations, before the controller 6 can perform a second fine impedance matching and/or a regulation of the transmitted power, automatic and in real-time during the operations, in particular by implementing the operating modes described above.

(59) In a third embodiment of the invention illustrated in FIG. 7, the plasma production facility 1 includes:

(60) a reactor 2 having a treatment chamber 20 in the volume of which the plasma is produced;

(61) several elementary plasma sources 3 each comprising an applicator 30 inside the treatment chamber 20 applying an electromagnetic wave in the microwave range, as well as a measurement system 31 for measuring the power reflected by the corresponding application device 30;

(62) an electromagnetic wave generator 4 in the microwave range, of the solid-state type, connected to the applicators 30 by coaxial cables 5, the generator 4 comprising a frequency adjustment system 40 designed to adjust the frequency of the wave between approximately 2400 and 2500 MHz, or even in another predetermined frequency range; and

(63) a controller 6 connected at the input to the measurement system 31 and at the output to the frequency adjustment system 40; and

(64) a power divider 8 placed at the output of the generator 4 and designed to divide the microwave power generated by the generator 4 by the number k of elementary sources 3, the power divider 8 having k outputs each connected to an applicator 30 by a coaxial cable 5, each output of the power divider 8 thus debiting 1/k of the total power delivered by the generator 4 to an applicator 30.

(65) The controller 6 is designed to implement the six operating modes described above, with the difference that a single generator 4 is associated with several elementary sources 3. Thus, the controller 6 can:

(66) in the first operating mode: regulate the reflected power P.sub.R(i) on each elementary source (i) by playing on the frequency f of the wave generated by the shared generator 4, preferably for impedance matching;

(67) in the second operating mode: regulate the transmitted power P.sub.T(i) on each elementary source (i) by playing on the frequency f of the wave generated by the shared generator 4;

(68) in the third operating mode: regulate the reflected power P.sub.R(i) on each elementary source (i) by playing on the frequency f of the wave generated by the shared generator 4 and on the incident power P.sub.IN(i) on the source (i), knowing that the incident power P.sub.IN(i) for the source (i) corresponds to a fraction of the power P.sub.GEN of the generator 4 after the power division done by the divider 8;

(69) in the fourth operating mode: performing a regulation of the transmitted power P.sub.T(i) on each elementary source (i) by playing on the frequency f of the wave generated by the shared generator 4 and on the incident power P.sub.IN(i) on the source (i) (fraction of the power P.sub.GEN of the generator 4);

(70) in the fifth operating mode: regulating, for each source (i), the reflected power P.sub.R(i) and regulating the transmitted power P.sub.T(i) by playing on the frequency f of the wave generated by the shared generator 4 and on the incident power P.sub.IN(i) on the source (i) (fraction of the power P.sub.GEN of generator 4); and

(71) in the sixth operating mode: monitoring the resonance surface, in the creation areas associated with the elementary sources (i), by playing on the frequency f of the wave generated by the shared generator 4.

(72) Of course, this facility has a limitation due to the fact that the generator 4 powers several elementary sources 3, such that the reflected powers P.sub.R(i) measured on the various applicators 30 do not all reach exactly a same first reference value V.sub.R(i) since a dispersion may exist between the applicators 30 and, further, the elementary sources 3 may interact with each other. The fact nevertheless remains that the controller 6 allows an overall and average regulation of the reflected power and/or the transmitted power, as well as the resonance surface, on all of the elementary sources 3, by playing on the frequency f, and optionally the power P.sub.GEN, of the wave generated by the signal generator 4.

(73) However, in theory, if the applicators 30 are identical, or more accurately if the microwave lines between the generator 4 and each source 3 are identical, and if the division of the power done by the divider 8 is equitable irrespective of the frequency f, and if the operating conditions are identical at the end of each applicator 30 (in other words, if the plasma is uniform in the vicinity of the applicators 30), then the frequency f may be identical [to] each of the sources 3 so as to perform the impedance matching and/or the transmitted power regulation and/or the monitoring of the resonance surfaces.

(74) In a fourth embodiment of the invention illustrated in FIG. 8, the plasma production facility 1 is identical to that of the third embodiment of FIG. 7, with the difference that it further comprises an impedance matching device 7 positioned between the generator 4 and the power divider 8.

(75) This impedance matching device 7 thus makes it possible to perform a first impedance matching, optionally mean, with an adjustment prior to the operations, before the controller 6 can perform a second impedance matching for all of the elementary sources 3, automatically and in real-time during the operations. In general, the controller 6 is designed to implement the six operating modes described above, with the difference that an impedance matching shared by all of the sources 3 is done with the shared impedance matching device 7.

(76) In a fifth embodiment of the invention illustrated in FIG. 9, the plasma production facility 1 is identical to that of the third embodiment of FIG. 7, with the difference that it further comprises several impedance matching devices 7 positioned between the power divider 8 and the applicators 30, with one impedance matching device 7 per applicator 30.

(77) These impedance matching devices 7 thus make it possible to perform a first impedance matching, optionally mean, for each elementary source 3, with an adjustment prior to the operations. Next, the controller 6 makes it possible to perform a second impedance matching for all of the elementary sources 3, automatically and in real-time during the operations. In general, the controller 6 is designed to implement the six operating modes described above, with the difference that an individual impedance matching for each source 3 may be done with each impedance matching device 7, independently from one source 3 to the next. In this way, it is possible to compensate the differences between the applicators 30 (or more accurately between the microwave lines between the generator 4 and each source 3), disparities in the power division done by the divider 8, and lack of homogeneity of the plasma at the end of the applicators 30.

(78) In a sixth embodiment of the invention shown in FIG. 10, the plasma production facility 1 includes:

(79) a reactor 2 having a treatment chamber 20 in the volume of which the plasma is produced;

(80) several elementary plasma sources 3 each comprising an applicator 30 inside the treatment chamber 20 for applying electromagnetic waves in the microwave range, as well as a measurement system 31 for measuring the power reflected by the corresponding application device 30; and

(81) several electromagnetic wave generators 4 in the microwave range, of the solid-state type, each connected to an applicator 30 by a coaxial cable 5, with one generator 4 per elementary source 3, each generator 4 comprising a frequency adjustment system 40 designed to adjust the frequency of the wave between approximately 2400 and 2500 MHz, or even in another predetermined frequency range; and

(82) a controller 6 connected at the input to the measurement systems 31 of the different elementary sources 3 and at the output to the frequency adjustment systems 40 of the different generators 4.

(83) The controller 6 is designed to implement the six operating modes described above, with the difference that each generator 4 is associated with a single elementary source 3. Thus, the controller 6 can:

(84) in the first operating mode: regulate the reflected power P.sub.R(i) on each elementary source (i) (independently from one source to the next) by playing on the frequency f.sub.(i) of the wave generated by the associated generator 4, preferably for impedance matching;

(85) in the second operating mode: regulate the transmitted power P.sub.T(i) on each elementary source (i) (independently from one source to the next) by playing on the frequency f.sub.(i) of the wave generated by the associated generator 4;

(86) in the third operating mode: regulating the reflected power P.sub.R(i) on each elementary source (i) by playing on the frequency f.sub.(i) of the wave generated by the associated generator 4 and on the incident power P.sub.IN(i) on the source (i) (independently from one source to the next), knowing that the incident power P.sub.IN(i) for the source (i) substantially corresponds to the power P.sub.GEN(i) of the associated generator 4, to within the feed losses (such that playing on the incident power P.sub.IN(i) on the source (i) results in playing on the power P.sub.GEN(i) of the associated generator 4);

(87) in the fourth operating mode: regulating the transmitted power P.sub.T(i) on each elementary source (i) (independently from one source to the next) by playing on the frequency f.sub.(i) of the wave generated by the associated generator 4 and on the incident power P.sub.IN(i) on the source (i) (and therefore on the power P.sub.GEN(i) of the associated generator 4);

(88) in the fifth operating mode: regulating, for each source (i), the reflected power P.sub.R(i) and regulating the transmitted power P.sub.T(i) by playing on the frequency f.sub.(i) of the wave generated by the associated generator 4 and on the incident power P.sub.IN(i) on the source (i) (and therefore on the power P.sub.GEN(i) of the associated generator 4); and

(89) in the sixth operating mode: monitoring the resonance surface, and therefore the creation areas associated with each elementary source (i) (independently from one source to the next), by playing on the frequency f.sub.(i) of the wave generated by the associated generator.

(90) Thus, the controller 6 monitors the frequency adjustment systems 31 (monitoring the frequency) and the generators 4 (monitoring the incident power) independently of one another.

(91) For example, in the first operating mode (regulation of the reflected power), for the first elementary source 3, a first reflected power P.sub.R(1) is measured, and the controller 6 finds a first frequency f.sub.(1) for the first generator 4 allowing that reflected power P.sub.R(1) to reach a first reference value V.sub.R(1), for example zero or at least minimal. The regulation of the reflected power P.sub.R(1) by varying the frequency of the first generator 4 is done using a first feedback loop that concerns only the first elementary source 3 and the first generator 4.

(92) Likewise, for the second elementary source 3, a second reflected power P.sub.R(2) is measured, and the controller 6 finds a second frequency f.sub.(2) for the second generator 4 allowing that reflected power P.sub.R(2) to reach a second reference value V.sub.R(2), for example zero or at least minimal. The regulation of the reflected power P.sub.R(2) by varying the frequency of the second generator 4 is done using a second feedback loop that concerns only the second elementary source 3 and the second generator 4.

(93) This facility has the advantage, relative to the third, fourth and fifth embodiments, of regulating the power (impedance adaptation) and/or regulating transmitted power and/or monitoring the resonance surfaces for each elementary source 3, independently of one another. This facility thus makes it possible to monitor the power transmitted on each elementary source 3, still independently of one another, for example out of a concern for homogenizing the plasma, by playing on the frequencies of each generator 4, independently of one another.

(94) In a seventh embodiment of the invention illustrated in FIG. 11, the plasma production facility 1 is identical to that of the sixth embodiment of FIG. 10, with the difference that it further comprises several impedance matching devices 7 positioned between the generators 4 and the applicators 30, with one impedance matching device 7 per applicator 30.

(95) These impedance matching devices 7 thus make it possible to perform a first impedance matching, optionally mean, for each elementary source 3, with an adjustment prior to the operations. Next, the controller 6 makes it possible to implement the six operating modes described above, for example to perform a second fine impedance matching for each elementary source 3 (first, third and fifth embodiments), independently, automatically and in real-time during the operations for each elementary source.

(96) In an eighth embodiment of the invention illustrated in FIG. 12, the plasma production facility 1 comprises a first sub-facility according to the third embodiment of FIG. 7, and a second sub-facility also according to the third embodiment of FIG. 7, where the applicators 30 of the two sub-facilities are positioned within a same treatment chamber 20 of the same reactor 2.

(97) Thus, the first sub-facility comprises:

(98) several elementary plasma sources 3 each comprising an applicator 30 inside the treatment chamber 20 and a measurement system 31 for measuring the power reflected by the corresponding application device 30;

(99) an electromagnetic wave generator 4 in the microwave range, connected to the applicators 30 by coaxial cables 5, the generator 4 comprising a frequency adjustment system 40 designed to adjust the frequency of the wave between approximately 2400 and 2500 megahertz, or even in another predetermined frequency range; and

(100) a power divider 8 placed at the output of the generator 4 and having k outputs each connected to an applicator 30 by a coaxial cable 5, each output of the power divider 8 thus debiting 1/k of the total power delivered by the generator 4 to an applicator 30.

(101) Thus, the second sub-facility comprises:

(102) several elementary plasma sources 3 each comprising an applicator 30 inside the same treatment chamber 20 and a measurement system 31 for measuring the power reflected by the corresponding application device 30;

(103) an electromagnetic wave generator 4 in the microwave range, of the solid-state type, connected to the applicators 30 by coaxial cables 5, the generator 4 comprising a frequency adjustment system 40 designed to adjust the frequency of the wave between approximately 2400 and 2500 megahertz, or even in another predetermined frequency range; and

(104) a power divider 8 placed at the output of the generator 4 and having m outputs (where m is not necessarily equal to k) each connected to an applicator 30 by a coaxial cable 5, each output of the power divider 8 thus debiting 1/m of the total power delivered by the generator 4 to the applicator 30.

(105) Furthermore, the facility 1 comprises a controller 6 connected at the input to the measurement systems 31 of all of the elementary sources 3, and at the output to the frequency adjustment systems 40 of the two generators 4.

(106) Of course, it is possible to consider, in one and/or the other of the two sub-facilities, providing one impedance matching device per generator (as in the case of the fourth embodiment of FIG. 8) or one impedance matching device per applicator (as in the case of the fifth embodiment of FIG. 8).

(107) It is also possible to consider adding a new sub-assembly, or replacing one of the two sub-assemblies with a new sub-assembly, that new sub-assembly being able to be of the type of the first, second, sixth or seventh embodiments, with one generator per applicator. In that case, the facility still comprises a single controller connected to the different measurement systems 31 and the different frequency adjustment systems 40.

(108) Of course, the example embodiment mentioned above is in no way limiting, and other improvements and details may be added to the facility according to the invention, without going beyond the scope of the invention, where other forms of application device and/or guide means for guiding the electromagnetic wave may for example be produced.