BAW-filter operating using bulk acoustic waves and passive components forming a balun

Abstract

The present invention relates to a BAW filter operating with bulk acoustic waves, which has a multilayer construction, wherein functional layers of a BAW resonator operating with bulk acoustic waves are realized by the multilayer construction, and wherein an interconnection of passive components is furthermore formed by the multilayer construction, said interconnection forming a balun, wherein the balun has at least one inductance (L1, L2, L3) and at least one capacitance (C1, C2) which are formed from structured functional layers of the BAW resonator. Furthermore, the invention relates to a method for producing the BAW filter.

Claims

1. A bulk acoustic wave (BAW) filter, comprising: a multilayer construction, wherein functional layers of a single BAW resonator operating with bulk acoustic waves are realized by the multilayer construction, and wherein an interconnection of passive components is furthermore formed by the multilayer construction, said interconnection forming a balun, wherein the balun has at least one inductance and at least one capacitance which are formed from structured functional layers of the single BAW resonator, and wherein structured metal layers which form the inductance and structured metal layers which form the capacitance are arranged at least partly one above another.

2. The BAW filter according to claim 1, wherein the functional layers of the single BAW resonator comprise an acoustic mirror, a first electrode a piezoelectric layer, a second electrode and a trimming layer.

3. The BAW filter according to claim 2, wherein the inductance is formed by one or a plurality of metal layers of the acoustic mirror and/or a metal layer of the first electrode and/or a metal layer of the second electrode.

4. The BAW filter according to one of claims 1 to 3, wherein the inductance is formed by a spiral metallization which is structured from a metallic functional layer of the BAW filter.

5. The BAW filter according to claim 2, further comprising: structurally identical BAW resonators except that they differ in thickness of the trimming layer, wherein the thickness of the trimming layer of one of the BAW resonators is chosen in such a way that the BAW resonator acts as a capacitance.

6. The BAW filter according to claim 2, wherein the capacitance is formed by structured metal layers in two different layers from the following layers, one or a plurality of metal layers of the acoustic mirror, a metal layer of the first electrode and a metal layer of the second electrode.

7. The BAW filter according to claim 1, wherein the capacitance is formed by two structured metal layers which are arranged in two different layers of the multilayer construction and which overlap one another in the multilayer construction.

8. A duplexer, wherein a BAW filter according to claim 1 and a further filter operating with acoustic waves are arranged on a common chip.

9. The BAW filter according to claim 1, wherein the balun connects an unbalanced input to two output ports of a balanced output, wherein the balun has a first signal path which connects the unbalanced input to the first balanced output port via a first inductance, a first node, a second inductance and a second node, a second signal path which connects the second node to the second balanced output port via a first capacitance, a third inductance and a third node, and a third signal path which connects the first node to the third node via a second capacitance.

10. The BAW filter according to claim 1, wherein the balun and the single BAW resonator are arranged alongside one another.

11. A method for producing a bulk acoustic wave (BAW) filter, comprising: applying a multilayer construction on a substrate, wherein functional layers of a single BAW resonator are successively applied and structured, and wherein layers of the multilayer construction are structured in such a way that they form an interconnection of passive components, which forms a balun having at least one inductance and at least one capacitance which are formed from structured functional layers of the single BAW resonator, wherein structured metal layers which form the inductance and structured metal layers which form the capacitance are arranged at least partly one above another.

12. The method according to claim 11, wherein structured metal layers which form the inductance and/or the capacitance are produced by photolithographic patterning.

13. The method according to claim 11 or 12, wherein an acoustic mirror, a first electrode, a piezoelectric layer, a second electrode and a trimming layer are applied successively on the substrate.

14. The method according to claim 11, wherein the single BAW resonator and the balun are structured temporally in parallel.

15. A BAW filter with bulk acoustic waves, comprising: a multilayer construction, wherein functional layers of a BAW resonator operating with bulk acoustic waves are realized by the multilayer construction, wherein an interconnection of passive components is furthermore formed by the multilayer construction, said interconnection forming a balun, wherein the balun has at least one inductance and at least one capacitance which are formed from structured functional layers of the BAW resonator, and wherein structured metal layers which form the inductance and structured metal layers which form the capacitance are arranged at least partly one above another.

16. A bulk acoustic wave (BAW) filter, comprising: a multilayer construction, wherein functional layers of a BAW resonator operating with bulk acoustic waves are realized by the multilayer construction, and wherein an interconnection of passive components is furthermore formed by multilayer construction, said interconnection forming a balun, wherein the balun has at least one inductance and at least one capacitance which are formed from structured functional layers of the BAW resonator, wherein the balun connects an unbalanced input to two output ports of a balanced output, and wherein the balun has a first signal path which connects the unbalanced input to the first balanced output port via a first inductance, a first node, a second inductance and a second node, a second signal path which connects the second node to the second balanced output port via a first capacitance, a third inductance and a third node, and a third signal path which connects the first node to the third node via a second capacitance.

Description

(1) The invention is explained in greater detail below on the basis of exemplary embodiments and the associated figures. The figures show different exemplary embodiments of the invention on the basis of schematic illustration that is not true to scale.

(2) FIG. 1 shows the multilayer construction of a BAW filter.

(3) FIG. 2 shows a balun circuit.

(4) FIG. 3A shows a structured bottom electrode, which is part of a multilayer construction in which the circuit shown in FIG. 2 is realized.

(5) FIG. 3B shows a structured top electrode, which is likewise part of the multilayer construction which realizes the circuit shown in FIG. 2.

(6) FIG. 4 shows the insertion losses S12, S23 of a BAW duplexer according to the invention.

(7) FIG. 5 shows an excerpt from the curves shown in FIG. 4.

(8) FIG. 6 shows the reflection factor S33 at the reception port of a BAW duplexer according to the invention.

(9) FIG. 7 shows the isolation of a BAW duplexer according to the invention.

(10) FIG. 1 schematically shows a BAW filter, which has a multilayer construction arranged on a substrate SUB. The multilayer construction comprises an acoustic mirror SP, a bottom electrode BE, a piezoelectric layer PZ, a top electrode TE and a trimming layer TR.

(11) An alternating signal can be applied to the bottom and top electrodes BE, TE and excites a bulk acoustic wave in the piezoelectric layer PZ. The acoustic mirror SP then prevents said wave from emerging from the BAW resonator and penetrating into the substrate SUB. For this purpose, the acoustic mirror SP comprises alternately layers having relatively high acoustic impedance and layers having relatively low acoustic impedance. Preferably, the acoustic mirror SP can comprise alternately SiO.sub.2 and metal layers.

(12) The trimming layer TR can be an SiO.sub.2 layer. The resonant frequency of the acoustic resonator is defined by the thickness of the SiO.sub.2 trimming layer TR.

(13) The multilayer construction shown in FIG. 1 can be used for forming an acoustic BAW resonator. An interconnection of passive components can furthermore be realized by a structuring according to the invention of the functional layers of the multilayer construction, a balun being formed by said interconnection.

(14) FIG. 2 shows an equivalent circuit diagram of the balun realized by structured functional layers of the multilayer construction. The balun has an unbalanced input port EP and two output ports AP1, AP2, which form a balanced output. A signal that is present at the unbalanced input port EP is divided into two signals by the circuit shown in FIG. 2, said signals being output at the balanced output. The two signals are phase-shifted by 180 with respect to one another by the circuit shown in FIG. 2.

(15) The balun has a first signal path S1, which connects the unbalanced input port EP to a first balanced output port AP1. In said first signal path S1, a first inductance L1, a first node K1, a second inductance L2 and a second node K2 are interconnected in series with one another. Furthermore, the balun has a second signal path S2, which connects the second node K2 to the second balanced output port AP2 via a first capacitance C1, a third inductance L3 and a third node K3. In the second signal path S2, a fourth node K4 is furthermore arranged between the first capacitance C1 and the third inductance L3. Via the fourth node K4, the second signal path S2 is interconnected with a reference potential GND. The balun furthermore has a third signal path S3, which connects the first node K1 to the third node K3 via a second capacitance C2.

(16) FIGS. 3A and 3B then show how the equivalent circuit diagram shown in FIG. 2 can be realized in a multilayer construction. In this case, FIG. 3A shows structured metallizations M1_BE-M5_BE of a bottom electrode BE and FIG. 3B shows structured metallizations M1_TE-M6_TE of a top electrode TE. The metallizations structured from bottom and top electrodes BE, TE are arranged in a common multilayer construction and are connected to one another at the desired locations by means of plated-through holes D1-D7.

(17) The unbalanced input port EP is arranged in the top electrode TE. The unbalanced input port EP is connected to a first spiral metallization M1_TE of the top electrode TE, which partly forms the first inductance L1. The first spiral metallization M1_TE of the top electrode TE is connected to a first spiral metallization M1_BE of the bottom electrode BE via a first plated-through hole D1. The two spiral metallizations M1_TE, M1_BE together form the first inductance L1.

(18) The first spiral metallization M1_BE of the bottom electrode BE is in turn connected to a second plated-through hole D2, which realizes the first node K1. The second plated-through hole D2 is connected in the top electrode TE to a second spiral metallization M2_TE of the top electrode TE, which forms the second inductance L2 in the first signal path.

(19) Furthermore, the second plated-through hole D2 is connected to a rectangular metallization M3_TE in the top electrode, wherein a structurally identical second rectangular metallization M2_BE of the bottom electrode BE is situated opposite said rectangular metallization M3_TE. The two rectangular metallizations M3_TE, M2_BE form a plate capacitor, which forms the capacitance C2 in the third signal path S3.

(20) The rectangular metallization M2_BE in the bottom electrode BE is furthermore connected to a third plated-through hole D3, which connects the rectangular metallization M2_BE in the bottom electrode BE to the top electrode TE. The third plated-through hole D3 constitutes the third node K3. The third plated-through hole D3 is connected firstly to the second balanced output port AP2 and secondly to a fourth spiral metallization M4_TE, which is arranged in the top electrode TE and which forms the third inductance L3 in the signal path S2.

(21) The fourth spiral metallization M4_TE in the top electrode TE is connected to the bottom electrode BE via a fourth plated-through hole D4. In the bottom electrode BE, the fourth plated-through hole D4 is connected to a third metallization M3_BE. The third metallization M3_BE of the bottom electrode BE is in turn connected to a fifth metallization M5_TE of the top electrode TE via a fifth plated-through hole D5.

(22) The fifth metallization M5_TE of the top electrode TE is connected via a further connection to a reference potential GND and to a sixth rectangular metallization M6_TE of the top electrode. In the bottom electrode BE, a structurally identical fourth rectangular metallization M4_BE is situated opposite said rectangular metallization M6_TE. The two rectangular metallizations M6_TE, M4_BE form the first capacitance C1 in the signal path S2.

(23) The fourth rectangular metallization M4_BE of the bottom electrode BE is connected to a sixth plated-through hole D6, which connects the bottom electrode BE to the top electrode TE. The sixth plated-through hole D6 forms the first balanced output port AP in the top electrode TE.

(24) Moreover, the fourth metallization M4_BE in the bottom electrode BE is connected to a seventh plated-through hole D7 via a fifth metallization M5_BE. The seventh plated-through hole D7 connects the bottom electrode BE to the second metallization M2_TE of the top electrode TE. The second metallization M2_TE in turn forms the second inductance L2.

(25) The realization of the balun circuit in a multilayer construction as described here constitutes only one possible configuration of the invention.

(26) Inductances L1, L2, L3 are realized by spiral metallizations M1_TE, M1_BE, M2_TE, M4_TE in one or a plurality of layers of the multilayer construction. Capacitances C1, C2 are formed by planar metallizations M2_BE, M3_TE, M6_TE, M4_BE which are arranged in two different layers of the multilayer construction and are situated opposite one another.

(27) FIGS. 4 to 7 are based on a duplexer comprising a BAW filter according to the invention. In this case, the BAW filter according to the invention is arranged in the reception path of the duplexer. A conventional BAW filter is used in the transmission path of the duplexer.

(28) FIG. 4 shows the insertion losses S12 and S23 as a function of the frequency for a BAW duplexer. The frequency in MHz is plotted on the abscissa, and the attenuation in dB is plotted on the ordinate.

(29) The curve S12 describes the insertion loss of a TX filter, i.e. the transmission from a transmission port to the antenna port as a function of the frequency of the signal. The curve S23 describes the insertion loss of the RX filter, i.e. the transmission from the antenna port to a reception port as a function of the frequency of the signal.

(30) In FIG. 4, and in the following figures, the curves S12, S23 are plotted multiply. In this case, a first curve is based on a duplexer having ideal components, a second curve is based on a duplexer having partly ideal and partly real components, and a third curve is based on a duplexer having real components.

(31) FIG. 5 shows an excerpt from the curve S23 shown in FIG. 4.

(32) FIG. 6 shows the reflection factor at the reception port described by the curve S33. The frequency in MHz is plotted on the abscissa and the attenuation in dB is plotted on the ordinate.

(33) FIG. 7 shows a curve S13 describing the isolation between a transmission port and a reception port in a BAW duplexer. The frequency in MHz is plotted on the abscissa, and the attenuation in dB is plotted on the ordinate.

REFERENCE SIGNS

(34) SUBSubstrate

(35) SPAcoustic mirror

(36) BEBottom electrode

(37) PZPiezoelectric layer

(38) TETop electrode

(39) TRTrimming layer

(40) EPInput port

(41) AP1, AP2Output port

(42) S1-S3Signal path

(43) L1-L3Inductance

(44) K1-K4Node

(45) C1, C2Capacitance

(46) GNDReference potential

(47) M1_TE-M6_TEMetallization of the top electrode

(48) M1_BE-M5_BEMetallization of the bottom electrode

(49) D1-D7Plated-through hole

(50) S12Insertion loss of the Tx filter

(51) S23Insertion loss of the Rx filter

(52) S33Reflection factor of the reception port

(53) S13Isolation