METHOD OF FABRICATION OF Al/GE BONDING IN A WAFER PACKAGING ENVIRONMENT AND A PRODUCT PRODUCED THEREFROM

Abstract

A method of bonding of germanium to aluminum between two substrates to create a robust electrical and mechanical contact is disclosed. An aluminum-germanium bond has the following unique combination of attributes: (1) it can form a hermetic seal; (2) it can be used to create an electrically conductive path between two substrates; (3) it can be patterned so that this conduction path is localized; (4) the bond can be made with the aluminum that is available as standard foundry CMOS process. This has the significant advantage of allowing for wafer-level bonding or packaging without the addition of any additional process layers to the CMOS wafer.

Claims

1. A microelectromechanical systems (MEMS) device comprising: a first substrate comprising a MEMS structure and a patterned germanium layer; and a second substrate comprising a patterned aluminum layer, wherein germanium of the patterned germanium layer of the first substrate is bonded to aluminum of the patterned aluminum layer of the second substrate.

2. The MEMS device of claim 1, wherein the patterned aluminum layer is patterned to substantially match the patterned germanium layer.

3. The MEMS device of claim 1, wherein the germanium bonded to the aluminum comprises at least one of a hermetic seal, an electrical contact, an insulating contact, or a mechanical contact between the first substrate and the second substrate.

4. The MEMS device of claim 3, wherein the germanium is disposed, at least in part, on a non-conductive layer to create the insulating contact.

5. The MEMS device of claim 1, wherein the first substrate comprises at least one via configured to provide electric feedthrough of signals to the second substrate.

6. The MEMS device of claim 1, wherein the MEMS structure comprises at least one of a MEMS radio frequency (RF) device structure, a MEMS gyroscope sensor structure, a MEMS pressure sensor structure, or an accelerometer sensor structure.

7. The MEMS device of claim 1, wherein at least one of the first substrate or the second substrate comprises at least one of a silicon substrate, a multiple layer of silicon substrates, or a substrate comprising at least one of gallium arsenide (GaAs), indium phosphide (InPh), silicon germanium (SiGe), or glass.

8. A microelectromechanical systems (MEMS) device comprising: a first substrate comprising a patterned germanium layer; and a second substrate comprising a patterned aluminum layer, wherein germanium of the patterned germanium layer of the first substrate is bonded to aluminum of the patterned aluminum layer of the second substrate.

9. The MEMS device of claim 8, wherein the patterned germanium layer is patterned to substantially match the patterned aluminum layer.

10. The MEMS device of claim 8, wherein the germanium bonded to the aluminum comprises at least one of a hermetic seal, an electrical contact, an insulating contact, or a mechanical contact between the first substrate and the second substrate.

11. The MEMS device of claim 8, wherein the MEMS device comprises at least one of a MEMS radio frequency (RF) device structure, a MEMS gyroscope sensor structure, a MEMS pressure sensor structure, or an accelerometer sensor structure.

12. The MEMS device of claim 8, wherein at least one of the first substrate or the second substrate comprises at least one of a silicon substrate, a multiple layer of silicon substrates, or a substrate comprising at least one of gallium arsenide (GaAs), indium phosphide (InPh), silicon germanium (SiGe), or glass.

13. A microelectromechanical systems (MEMS) device comprising: a first substrate comprising at least one of a patterned germanium layer configured to susbstantially match an aluminum layer of another substrate or the aluminum layer; and a second substrate comprising the other of the at least one of the patterned germanium layer or the aluminum layer, wherein germanium of the patterned germanium layer is bonded to aluminum of the aluminum layer.

14. The MEMS device of claim 13, wherein the MEMS device comprises at least one of a MEMS radio frequency (RF) device structure, a MEMS gyroscope sensor structure, a MEMS pressure sensor structure, or an accelerometer sensor structure.

15. The MEMS device of claim 13, wherein at least one of the first substrate or the second substrate comprises at least one of a silicon substrate, a multiple layer of silicon substrates, or a substrate comprising at least one of gallium arsenide (GaAs), indium phosphide (InPh), silicon germanium (SiGe), or glass.

16. The MEMS device of claim 15, wherein the at least one the first substrate or the second substrate comprises MEMS structures and a cavity.

17. The MEMS device of claim 15, wherein the at least one of the first substrate or the second substrate comprises a cover substrate.

18. The MEMS device of claim 15, wherein the at least one of the first substrate or the second substrate comprises an integrated circuit.

19. The MEMS device of claim 13, wherein the germanium bonded to the aluminum comprises at least one of a hermetic seal, an electrical contact, an insulating contact, or a mechanical contact between the first substrate and the second substrate.

20. The MEMS device of claim 13, wherein the patterned germanium layer is patterned to substantially match a patterned portion of the aluminum layer.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0016] FIG. 1 is a flow chart of a method for fabrication of a wafer level package in accordance with the present invention.

[0017] FIGS. 2A and 2B are cross sectional and top views of a first embodiment of an assembly in accordance with the present invention.

[0018] FIGS. 3A and 3B are cross sectional and top views of a second embodiment of an assembly in accordance with the present invention.

[0019] FIG. 4 illustrates an exemplary bonding profile to achieve a proper Al/Ge bond.

DETAILED DESCRIPTION

[0020] The present invention relates generally to wafer bonding and more particularly to a method and system of bonding utilizing aluminum and germanium in a wafer-level packaging of MEMS devices with electrical substrate interconnect environment. The following description is presented to enable one of ordinary skill in the art to make and use the invention and is provided in the context of a patent application and its requirements. Various modifications to the preferred embodiments and the generic principles and features described herein will be readily apparent to those skilled in the art. Thus, the present invention is not intended to be limited to the embodiments shown, but is to be accorded the widest scope consistent with the principles and features described herein.

[0021] FIG. 1 is a flow chart of a method of fabrication of a wafer level package in accordance with the present invention. The method comprises providing a MEMS structure including a substantially germanium top layer, via step 12, and providing a CMOS structure including a substantially aluminum top layer, via step 14. Finally, the method comprises bonding the top layer of the MEMS structure with the top layer of the CMOS structure, via step 16.

[0022] The following describes a preferred embodiment in accordance with the present invention. FIGS. 2A and 2B are cross sectional and top views of a first embodiment of an assembly 100 in accordance with the present invention. Referring to the embodiment shown in FIG. 2A, a standard foundry CMOS wafer 104 which includes aluminum is bonded to a MEMS substrate 102 which includes germanium to provide an aluminum/germanium (Al/Ge) bond 110. In this embodiment, a cavity 106 is within the substrate 104. The CMOS substrate wafer 104 can be any substrate with patterned aluminum shown in FIG. 2B that is designed to interface with the MEMS substrate 102 to make for a complete functioning product. In addition, a plurality of aluminum contacts 116 are on the top of the CMOS substrate 104 which are coupled to bond pads 105 by interconnect 107. Vias 107 are provided in both the bond pads 105 and the aluminum contacts 116 to allow for electrical connection thereto. As an example, the substrate 104 can comprise only a collection of metal layers and interconnects for providing for an electrical interconnection to the MEMS layers. Furthermore, the MEMS substrate 102 includes a MEMS feature 108 to complement the MEMS layers on the MEMS substrates 104, such as corresponding cavity 106. A gap control standoff 111 is provided to provide a precise separation of the MEMS substrate 102 from the CMOS substrate 104. The gap control standoff 111 provides a seal ring 112 for the device.

[0023] FIGS. 3A and 3D are cross sectional and top views of a second embodiment of an assembly in accordance with the present invention. The assembly 200 includes many of the same elements as assembly 100 of FIG. 2A and 2B and those elements have the same reference numerals. Additionally, the assembly 200 has via contacts 202 through the MEMS substrate 102 and the gap control standoff 111 to provide electric feedthrough of signals.

[0024] Another important feature of the substrate 104 is the availability of the multilayer metallization standard in CMOS foundries with chemical-mechanical-polishing of the oxide to make for a very planar metallized layer suitable for forming Al/Ge eutectic alloy with a germanium presence on the MEMS layer. The MEMS substrate 102 can be a silicon wafer or combination of silicon wafers assembled with all the MEMS features and functionalities including any type of preprocessed features.

[0025] In the preferred embodiment, the MEMS substrate on which the germanium has been patterned is a silicon substrate doped with boron to a conductivity of 0.006-0.020 cm. This p+ doping forms an ohmic contact with the aluminum-germanium eutectic mix following the bond.

[0026] To describe the bonding layers in more detail refer now to the following.

[0027] Bonding Layers

[0028] In a preferred embodiment, the top metal layer of the foundry CMOS wafer is a ratio mix of 97.5:2:0.5 Al:Si:Cu and is 700 nm thick and is on a planarized oxide layer using CMP which is the standard processing step for most CMOS processes of 0.5 um or lower geometries. In a preferred embodiment, the bonding layers on the MEMS are 500 nm of germanium deposited in a standard vacuum sputter deposition system which is properly patterned to match the corresponding aluminum patterned for bonding.

[0029] Below is an example of the preferred embodiment of the equipment and process in accordance with the present invention.

[0030] Required Equipment

[0031] The bonding is performed in a commercially available wafer bonder such as that supplied by Electronic Visions Group, Inc., or Suss Microtec, Inc. The equipment should meet the following standards and have the following capabilities: (1) temperature control of both the top and the bottom chuck to nominally 450 degrees Celsius (C); (2) ambient pressure control to sub-tor; (3) ambient gas control (via a purge line); (4) plumbed with 4-3-5 percent forming gas; and (5) the capability of applying a uniform force across the wafer pair of a minimum of 3000 N.

[0032] In the preferred embodiment, the wafers are pre cleaned and then aligned prior to bonding in a compatible alignment tool.

[0033] Pre-bond Cleaning

[0034] In the preferred embodiment, both the CMOS wafer and the MEMS wafer are cleaned prior to bonding. Both wafers are assumed to be free of any photoresist or other extraneous materials from previous processing steps. The wafers are cleaned by: (1) a 1.30 second dip in deionized water, (2) a 1.30 second dip in 50:1 HF; (3) a dump rinse; and (4) a standard spin-rinse-dry process.

[0035] Alignment

[0036] The bonding pair is aligned in an Electronic Visions 620 wafer-wafer aligner. Separation flags are inserted to maintain separation of the bonded pair prior to bonding.

[0037] Bonding

[0038] The aligned pair is transferred to an Electronic Visions 501 bonder. The purge line of this machine has been plumbed with forming gas. Following the cool down period of the bonding recipe, the bonding is complete and requires no further processing. An example of an exemplary bonding temperature profile for achieving the proper Al/Ge bond is shown in FIG. 4.

DESCRIPTION OF VARIOUS AND ALTERNATE EMBODIMENTS

[0039] Alternative embodiments include, for example, (1) the utilization of different materials on top of the germanium to protect it during subsequent MEMS processing; (2) the employment of different pre-bond cleaning methods; (3) the bond may be performed unaligned; (4) the bond may be performed without patterning the aluminum and/or the germanium; (5) the CMOS wafer may be bonded without any additional processing other than the pre-bond clean; (6) the aluminum-germanium bond may be configured so as not to create a hermetic seal; (7) utilization of a substrate other than a MEMS wafer (such as a simple cover wafer); (8) the MEMS substrate may comprise something other than a gyroscope (such as a pressure sensor or accelerometer); (9) the aluminum of the standard CMOS wafer may comprise different formulations of standard aluminum (2% silicon, 2% silicon/1% copper, etc.)

[0040] In addition, (10) a specific temperature profile can be utilized; (11) a forming gas can be used to deoxidize the contact surfaces; (12) aluminum can be utilized as the standard metallization used for IC fabrication; (13) aluminum substrate can be kept below a predetermined temperature to prevent complete leaching of aluminum and germanium alloy from the oxide on the substrate; (14) the bonding can be performed using controlled ambient such as forming gas; (15) the bonding can be performed using low pressure bonding force or high pressure bonding force as assistance for/in order to assist in breaking of the aluminum oxide to initiate the interaction; (16) two wafers can be prealigned prior to bonding process; (17) a special cleaning solution can be utilized to clean the oxide from both surfaces; (18) the bonding surfaces can be cleaned by sputter etching; (19) a thin layer of TiW can be utilized to protect the bonding surface during MEMS processing; (20) including pre bond cleaning using plasma and/or other insitu cleaning techniques, in addition to a more concentrated forming gas and higher force bond; (21) the germanium can be deposited on a non-conductive layer (such as silicon dioxide) to create an insulating contact.

[0041] The germanium can be deposited on a semiconductor substrate that has been doped such that the resulting contact between the aluminum of the substrate and the MEMS is rectifying. This substrate can be a silicon substrate with n-type doping to 0.020.05 Q-cm.

[0042] The germanium can be deposited on a semiconductor substrate that has been doped such that the resulting contact between the aluminum of the substrate and the MEMS is ohmic.

[0043] A method and structure of bonding of germanium to aluminum between two substrates to create a robust electrical and mechanical contact is disclosed. An aluminum-germanium bond has the following unique combination of attributes: (1) it can form a hermetic seal; (2) it can be used to create an electrically conductive path between two substrates; (3) it can be patterned so that this conduction path is localized; (4) the bond can be made with the aluminum that is available as a standard foundry CMOS process. This has the significant advantage of allowing for wafer-level bonding or packaging without the addition of any additional process layers to the CMOS wafer.

[0044] Although the present invention has been described in accordance with the embodiments shown, one of ordinary skill in the art will readily recognize that there could be variations to the embodiments and those variations would be within the spirit and scope of the present invention. Accordingly, many modifications may be made by one of ordinary skill in the art without departing from the spirit and scope of the appended claims.