PROJECTION EXPOSURE APPARATUS FOR SEMICONDUCTOR LITHOGRAPHY WITH A VIBRATION DAMPER AND METHOD FOR DESIGNING A VIBRATION DAMPER

Abstract

A projection exposure apparatus has a vibration damper with a holder and a mass that is connected to the holder via a damping element. The vibration damper comprises a temperature control device for the temperature control of the damping element. The disclosure also relates to a method for designing a vibration damper.

Claims

1. An apparatus, comprising: a vibration damper, comprising: a holder; a mass; a damping element connecting the holder and the mass; and a temperature control device configured to control a temperature of the damping element, wherein the apparatus is a semiconductor lithography projection exposure apparatus.

2. The apparatus of claim 1, wherein the temperature control device is part of the damping element.

3. The apparatus of claim 1, wherein the temperature control device is supported by the holder.

4. The apparatus of claim 1, wherein the temperature control device is supported by the mass.

5. The apparatus of claim 1, wherein the temperature control device is not in mechanical contact with the vibration damper.

6. The apparatus of claim 1, wherein the temperature control device is configured to heat the vibration damper.

7. The apparatus of claim 1, wherein the temperature control device is configured to heat the damping element.

8. The apparatus of claim 1, wherein the temperature control device is configured to cool the vibration damper.

9. The apparatus of claim 1, wherein the temperature control device is configured to cool the damping element.

10. The apparatus of claim 1, wherein the vibration damper comprises a sensor.

11. The apparatus of claim 1, wherein the vibration damper comprises a controller.

12. The apparatus of claim 1, the vibration damper comprises a controller configured to provide closed-loop control of the temperature control device via a signal from the sensor as a feedback variable.

13. The apparatus of claim 1, the vibration damper comprises a controller configured to provide closed-loop control of the temperature control without a feedback variable.

14. The apparatus of claim 1, wherein the temperature control device comprises an infrared heater.

15. The apparatus of claim 1, further comprising a structure held by the vibration damper.

16. The apparatus of claim 15, wherein the vibration damper is configured to dampen vibrations of the structure.

17. The apparatus of claim 16, wherein the structure comprises a pin.

18. The apparatus of claim 15, wherein the structure comprises a pin.

19. The apparatus of claim 1, further comprising an actuator which comprises a structure, wherein the structure is held by the vibration damper.

20. A method of designing a vibration damper which comprises a holder, a mass, a damping element connecting the holder and the mass, and a temperature control device configured to control a temperature of the damping element, the method comprising: determining a target temperature for the vibration damper; determining material properties of the damping element at the target temperature; designing the temperature control device; and designing the vibration damper for the target temperature.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Exemplary embodiments and variants of the disclosure are explained in more detail below with reference to the drawing, in which:

[0024] FIG. 1 shows a basic structure of a DUV projection exposure apparatus in which the disclosure can be implemented;

[0025] FIG. 2 shows a basic structure of an EUV projection exposure apparatus in which the disclosure can be implemented;

[0026] FIGS. 3A-3C show schematic views of in each case an embodiment of the disclosure;

[0027] FIG. 4 shows an embodiment of the disclosure; and

[0028] FIG. 5 shows a flowchart for a method according to the disclosure.

EXEMPLARY EMBODIMENTS

[0029] FIG. 1 illustrates an exemplary projection exposure apparatus 1 in which the disclosure can be applied. The projection exposure apparatus 1 serves for the exposure of structures on a substrate which is coated with photosensitive materials, and which generally consists predominantly of silicon and is referred to as a wafer 2, for the production of semiconductor components, such as computer chips.

[0030] In this case, the projection exposure apparatus 1 substantially comprises an illumination device 3 for illuminating an object field 8 in an object plane 9, a reticle holder 6 for receiving and exactly positioning a mask provided with a structure and arranged in the object plane 9, the mask being a so-called reticle 7, which is used to determine the subsequent structures on the wafer 2, a wafer holder 10 for mounting, moving and exactly positioning precisely the wafer 2, and an imaging device, namely a projection optical unit 13, having a plurality of optical elements 14, which are held by way of mounts 15 in a lens housing 16 of the projection optical unit 13.

[0031] A basic functional principle in this case provides for the structures introduced into the reticle 7 to be imaged on the wafer 2, the imaging generally reducing the scale.

[0032] A light source 4 of the illumination device 3 provides a projection beam 17 in the form of electromagnetic radiation, the projection beam being used for the imaging of the reticle 7 arranged in the object plane 9 onto the wafer 2 arranged in the region of an image field 11 in an image plane 12, the electromagnetic radiation being in a wavelength range of between 100 nm and 300 nm, for example. The source 4 used for this radiation may be a laser, a plasma source or the like. The radiation is shaped via optical elements 18 in an illumination optical unit 5 of the illumination device 3 in such a way that the projection beam 17, when incident on the reticle 7 arranged in the object plane 9, illuminates the object field 8 with the desired properties with regard to diameter, polarization, shape of the wavefront and the like.

[0033] An image of the reticle 7 is generated by way of the projection beam 17 and, after having been correspondingly reduced by the projection optical unit 13, is transferred to the wafer 2 arranged in the image plane 12, as has already been explained above. In this case, the reticle 7 and the wafer 2 can be moved counter to one another in matched fashion, so that regions of the reticle 7 are imaged onto corresponding regions of the wafer 2 virtually continuously during what is called a scanning operation. The projection optical unit 13 has a multiplicity of individual refractive, diffractive and/or reflective optical elements 14, such as for example lens elements, mirrors, prisms, terminating plates and the like, the optical elements 14 being able to be actuated for example via one or more actuator arrangements, not illustrated separately in the figure.

[0034] FIG. 2 shows by way of example a basic structure of a microlithographic EUV projection exposure apparatus 101 in which the disclosure can likewise find application. The structure of the projection exposure apparatus 101 and the principle of imaging a structure on a reticle 107 arranged in the object plane 109 onto a wafer 102 arranged in the image field 111 is comparable to the structure and procedure described in FIG. 1. Identical component parts are designated by a reference sign increased by 100 relative to FIG. 1, that is to say the reference signs in FIG. 2 begin with 101. In contrast to a transmitted-light apparatus as described in FIG. 1 shows that only optical elements 114, 118 embodied as mirrors are used for imaging and/or for illumination in the EUV projection exposure apparatus 101 on account of the short wavelength of the used EUV radiation 117 in the range of 1 nm to 120 nm, for example of 13.5 nm.

[0035] The illumination device 103 of the projection exposure apparatus 101 comprises, besides a light source 104, an illumination optical unit 105 for the illumination of the object field 108 in an object plane 109. The EUV radiation 117 in the form of optical used radiation generated by the light source 104 is aligned via a collector, which is integrated in the light source 104, in such a way that it passes through an intermediate focus in the region of an intermediate focal plane 119 before it is incident on a field facet mirror 120. Downstream of the field facet mirror 120, the EUV radiation 117 is reflected by a pupil facet mirror 121. With the aid of the pupil facet mirror 121 and an optical assembly 122 having mirrors 118, the field facets of the field facet mirror 120 are imaged into the object field 108. Apart from the use of mirrors 114, the structure of the downstream projection optical unit 113 does not differ in principle from the structure described in FIG. 1 and is therefore not described in further detail.

[0036] FIG. 3A shows a sectional illustration of a vibration damper 20 according to the disclosure, as can be used in one of the projection exposure apparatuses 1, 101 described in FIGS. 1 and 2. The vibration damper 20 is connected via a holder 23 to a structure to be damped, which is in the form of a pin 28. In this case, the pin 28 can be part of an actuator of one of the projection exposure apparatuses 1, 101 described in FIGS. 1 and 2. In the embodiment shown in the figure, the holder 23 is connected to a mass 21 via a damping element which is designed as a membrane 22 and which comprises an elastomer. Alternatively, the damping element can also have a conical shape or a shape designed as a free-form surface. The vibration damper 20 damps a vibration in the axial direction of the pin 28; the mass 21 designed as a ring thus likewise vibrates in the axial direction of the pin 28, with the membrane 22 being deformed in the process. Kinetic energy of the vibration is dissipated into thermal energy as a result of the material deformation in the membrane 22. The membrane 22 is therefore heated by heat which the actuator gives off during operation and additionally by the heat generated by the dissipation of energy, which leads to a change in the damping behavior of the vibration damper 20 on account of the temperature dependence of the stiffness and damping of the elastomer of the membrane 22. The self-heating of the elastomer through movement is negligible vis-à-vis the external heat source. The holder 23 further comprises a temperature control device in the form of a heating element 24 which is extensively connected to a first side of the holder 23. By controlling the temperature of the vibration damper 20, the latter can be kept at a constant temperature, which as a result leads to a constant stiffness and damping of the elastomer. A temperature sensor 25 which detects the temperature of the holder 23 is arranged on the opposite second side of the holder 23. Alternatively, the temperature sensor 25 can also be arranged on the membrane 22 or the mass 21, which is indicated by dashed lines. However, the arrangement on the holder 23 allows for the secure connection to the pin 28 which can simplify a connection, for example via a cable. The temperature of the membrane 22 can be determined via the detected temperature of the vibration damper 20. From this, it is possible to subsequently determine the amount of energy that has to be introduced into the vibration damper 20 via the heating element 24 in order to keep the temperature of the vibration damper constant at a previously determined target temperature. The temperature sensor 25 can be designed, for example, as a bimetal, as a resistance sensor or else as contactless infrared sensors. Alternatively, a vibration sensor 26 is arranged on the same side of the holder 23 as the temperature sensor 25. In the case where the vibration sensor 26 replaces the temperature sensor 25, the vibration of the holder 23 and hence of the pin 28 is detected, which is why the vibration sensor 26 may also be arranged directly on the pin 28 (shown using dashed lines). The vibration can be compared with a target vibration, whereupon subsequently the damping of the vibration damper 20 is determined on the basis of the determined deviation and the temperature of the vibration damper is determined. The thermal energy provided by the heating element 24 can then be adjusted. A deviation in the vibration of the pin 28 which is relevant to the imaging quality of the projection exposure apparatus 1, 101 is detected directly, whereas the temperature of the vibration damper 20 only allows indirect conclusions to be drawn about the actual vibration of the pin 28. A combination of temperature sensor 25 and vibration sensor 26 combines the features of temperature and vibration closed-loop control. Optionally, the vibration of the pin 28 can also be derived from the control signals of the actuator.

[0037] FIGS. 3B and 3C show variants of the embodiment of a vibration damper 20 described in FIG. 3A, which is why only the differences from the embodiment described in FIG. 3A are discussed, and no temperature sensor 25 is shown either.

[0038] The heating element 24 is arranged on the membrane 22 in FIG. 3B. The heating element 24 comprises flexible and durable wires, which do not affect the stiffness and damping of the elastomer of the membrane 22 and which are not damaged, for example the wire does not break, as a result of the constant movement of the membrane 22. The heating element 24 can also be surrounded by the elastomer of the membrane 22.

[0039] The heating element 24 is arranged on the mass 21 in FIG. 3C. This is desirable, for example, when a majority of the introduced thermal energy flows into the membrane 22 via the holder 23, as a result of which a temperature gradient forms in the membrane 22. By arranging the heating element 24 on the mass 21, the temperature gradient can be minimized.

[0040] FIG. 4 shows a vibration damper 20, the temperature control device being designed as an infrared heater 27, that is to say it is not mechanically connected to the vibration damper 20 but acts thereon without contact. The infrared heater 27 is designed in such a way here that the membrane 22 is exposed to infrared radiation over its entire area. Alternatively, the infrared heater 27 can also be designed as a laser, which can apply infrared radiation to the entire surface of the membrane 22 via a scanning movement. This can allow for the membrane 22 to be locally exposed to infrared radiation to different degrees by way of the duration of the irradiation and the intensity of the laser, and so it is possible to set a desired temperature distribution, for example a homogeneous temperature distribution, in the membrane 22. The temperature of the membrane 22 can also be detected contactlessly by an infrared sensor (not shown).

[0041] FIG. 5 shows a flowchart of a method according to the disclosure for designing a vibration damper described in FIGS. 3A-c and 4, comprising the following method steps:

[0042] A target temperature for the vibration damper is determined in a first method step 31. The material properties of the damping element 22 are determined at the target temperature in a second method step 32.

[0043] The temperature control device 24, 27 is designed in a third method step 33. The vibration damper 20 is designed in a fourth method step 34.

LIST OF REFERENCE SIGNS

[0044] 1 DUV projection exposure apparatus [0045] 2 Wafer [0046] 3 Illumination device [0047] 4 Light source [0048] 5 Illumination optical unit [0049] 6 Reticle holder [0050] 7 Reticle [0051] 8 Object field [0052] 9 Object plane [0053] 10 Wafer holder [0054] 11 Image field [0055] 12 Image plane [0056] 13 Projection optical unit [0057] 14 Optical elements (projection optical unit) [0058] 15 Mounts [0059] 16 Lens housing [0060] 17 Projection beam [0061] 18 Optical elements (illumination device) [0062] 20 Vibration damper [0063] 21 Mass [0064] 22 Membrane [0065] 23 Holder [0066] 24 Heating element [0067] 25 Temperature sensor [0068] 26 Vibration sensor [0069] 27 Infrared heating [0070] 28 Structure [0071] 31 Method step 1 [0072] 32 Method step 2 [0073] 33 Method step 3 [0074] 34 Method step 4 [0075] 101 EUV projection exposure apparatus [0076] 102 Wafer [0077] 103 Illumination device [0078] 104 Light source [0079] 105 Illumination optical unit [0080] 106 Reticle holder [0081] 107 Reticle [0082] 108 Object field [0083] 109 Object plane [0084] 110 Wafer holder [0085] 111 Image field [0086] 112 Image plane [0087] 113 Projection optical unit [0088] 114 Optical elements (projection optical unit) [0089] 115 Mounts [0090] 116 Lens housing [0091] 117 Projection beam [0092] 118 Optical elements (illumination device) [0093] 119 Intermediate focus [0094] 120 Field facet mirror [0095] 121 Pupil facet mirror [0096] 122 Optical assembly