Method of preparing strain released strip-bent x-ray crystal analyzers

Abstract

A method of preparing two dimension bent X-ray crystal analyzers in strips feature is provided. A crystal wafer in strips is bonded to a curved substrate which offers the desired focus length. A crystal wafer in strips is pressed against the surface of the substrate forming curved shape by anodic bonding or glue bonding. The bonding is permanently formed between crystal wafer and its substrate surface, which makes crystal wafer has same curvature as previously prepared substrate.

Claims

1. A Method of making x-ray crystal analyzer in two dimension bending with strip crystal feature by bonding crystal wafer in strips with curved substrate.

2. The method of claim 1, wherein the bonding method is anodic boing, it comprising: pressing the top crystal wafer strips and substrate together, heating all set to high temperature, applying high voltage on wafer and its substrate, forming chemical atomic bond between the crystal wafer and its glass substrate.

3. The method of claim 2, wherein the crystal wafer strips can be bonded one by one, or bonded all in same time.

4. The method of clam 1, wherein the bonding method can be glue method or others, in which, it can bond crystal wafer and substrate together.

5. The method of claim 4, wherein there can be a interlayer between wafer strips and substrate.

6. The method of claim 1, wherein the crystals can be silicon, germanium, sapphire, quartz, lithium fluoride, diamond, Lithium Niobium oxide and all crystals which can be sliced and bent.

7. The method of claim 1, wherein the substrate can be metal and glass.

8. The method of claim 1, wherein the crystal wafer can be cut in any shape and any pieces, but are aligner in their original position in the wafer.

9. The method of claim 1, wherein the bending radius can be any length between 10 mm to 3000 mm.

Description

BRIEF DESCRIPTION OF DRAWINGS

(1) The foregoing and other objects, aspects and advantages will be better understood from the following detailed description of a preferred embodiment of the invention with reference to the drawings, in which:

(2) FIG. 1 is a schematic drawing of materials preparing as following in manufacturing Crystal analyzer: FIG. 1A. crystal wafer 101 for bonding; FIG. 1B. wafer is cut to several strips 102, here 6 strips; FIG. 1C. concave substrate 103;

(3) FIG. 2 is a schematic drawing of anodic bonding system for crystal analyzers. 102wafers strips; 103concave glass substrate; 104hotplate; 105curved die for pressing, forcing the flat crystal wafer strips to match the substrate curved surface; 106pressor with pressure on; 107high voltage power supplier; 100electric wires;

(4) FIG. 3 crystal wafer strips are bonded to concave substrate 105;

(5) FIG. 4 is a schematic drawing of Johann type strip-bent crystal analyzer used in x-ray spectrometer of Rowland circle geometry. 109Rowland circle; 110sample measured in x-ray; 111x-ray detector; 105strip-bent crystal analyzer; 112Bragg's angle; 113emitted or scattered x-rays; 114diffracted x-rays;

(6) FIG. 5 is a plot of x-ray elastic scanning with a silicon crystal strip-bent analyzer to check analyzer properties. It is measured with incident energy at 7919 eV, Bragg's angle at 87, it gives energy resolution around 0.2 eV;

DETAILED DESCRIPTION

(7) The present disclosure relates a method which can help to prepare any focus length crystal analyzers bent in two dimensions, which based on silicon or germanium crystal wafers, but not only limit to them. This invention works on crystal wafers which can be bonded by anodic bonding or glue bonding method, such as silicon and germanium crystals. Anodic bonding will get better quality.

(8) Here we describe this invention in anodic bonding method in details:

(9) Preparing double or single side polished crystal wafers for anodic bonding in thin thickness, which is based on focus length needed. Thickness of the wafer can be chose as T/F<10.sup.3. Where T is crystal wafer thickness and F is focus length in need. See 101 in FIG. 1A.

(10) Cut crystal wafer 101 in strips but keep all strips in same order as in a whole wafer. See 102 in FIG. 1B.

(11) Preparing optical grade polished glass substrate 103 in FIG. 1C, which is suitable for anodic bonding and have similar thermal expansion coefficient as bonding crystal wafers. Machining these substrate's one side surface to concave curved shape as needed and leave the other side flat. The substrate's thickness is less than 20 mm on edge.

(12) Set the substrate on a hotplate 104 at temperature between 250 C. and 400 C. with crystal wafer strips on its top. See FIG. 2.

(13) Applying force on pressor 106 then to a convex die 105 on top of this setting, where 105 has same curved shape as the substrate 103. Increasing force until tightly contacting wafer 102 and substrate 103 together.

(14) Applying high voltage 107 on the crystal wafer and its substrate. The voltage can be as high as 1000V to 3000V, and current 1 mA to 40 mA dependent on substrate thickness and the force applied.

(15) Normally it takes 3-10 minutes for bonding. Waiting for another 90 minutes or longer for solid after it was bonded.

(16) Cooling down the bonded crystal analyzer 108 on site to room temperature in air. See FIG. 3.

(17) The crystal analyzer 108 is normally employed in the Rowland circle with either the Johann or Johansson geometries, for wavelength-specific focusing of X-rays in diffraction way. Here FIG. 4 shows a schematic drawing of Johann type Strip-bent crystal analyzer used in x-ray spectrometer of Rowland circle geometry. X-rays emitted or scattered from target sample 110 are collected by strip-bent crystal analyzer 105. After diffracting in 105, those diffracted x-rays get into a x-ray detector 111. Both count rates and Bragg's angles are recorded and plotted out to form x-ray spectra. One plot in FIG. 5 is x-ray elastic scanning of silicon crystal strip-bent analyzer Si(444). It is measured with incident energy at 7919 eV, Bragg's angle at 87, it gives energy resolution around 0.2 eV.