Device for mass spectrometry

Abstract

A device for mass spectrometry in continuous operation can be equipped with a focused electron beam source or laser radiation source. It can further include a vacuum chamber, a stage for placing the specimen, and an ion beam column with a plasma source for producing a primary ion beam and a secondary ion mass spectrometer for secondary ion analysis. The ion beam column is connected to an inert gas source and to a reactive gas source and is modified for simultaneous introduction of at least two gases from the inert gas source and reactive gas source. The secondary ion mass spectrometer is of an orthogonal Time-of-Flight type to ensure the function with the ion beam column in continuous operation.

Claims

1. Device for mass spectrometry including a vacuum chamber, stage for placing a specimen, ion beam column with a plasma source for producing primary ion beams and a secondary ion mass spectrometer for analyzing secondary ions, wherein the ion beam column is connected to an inert gas source and a reactive gas source, wherein the ion beam column is configured for continuously introduction of at least one gas from the inert gas source and at least one gas from the reactive gas source, and that the secondary ion mass spectrometer is of an orthogonal Time-Of-Flight type to ensure the function with the ion beam column in continuous operation.

2. Device for mass spectrometry according to claim 1, wherein the plasma source is of an Electron Cyclotrone Resonance type.

3. Device for mass spectrometry according to claim 1, wherein the ion beam column produces a focused ion beam.

4. Device for mass spectrometry according to claim 1, wherein the reactive gas source is an oxygen source.

5. Device for mass spectrometry according to claim 1, wherein the inert gas source is xenon source.

6. Device for mass spectrometry according to claim 1, wherein the inert gas source is argon source.

7. Device for mass spectrometry according to claim 1, wherein the inert gas source is helium source.

8. Device for mass spectrometry according to claim 1, further comprising a device for producing a focused electron beam.

9. Device for mass spectrometry according to claim 1, further comprising a laser radiation source.

Description

DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 schematically depicts an exemplary embodiment of a device with combined ion and electron beams and a Secondary Ion Mass Spectrometer according to the present invention.

(2) FIG. 2 schematically depicts a cross-sectional view of the orthogonal TOF SIMS.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

(3) An exemplary embodiment of the mass spectrometry device in continuous operation in FIG. 1 consists of the vacuum chamber 1 which contains the specimen stage 2 on which a studied specimen 3 is placed. The ion beam column 4 is then connected to the vacuum chamber, producing the primary ion beam 5, preferably focused, which serves to monitor the specimen 3, process the specimen 3 or to deposit any material onto the specimen 3. For many reasons, apparent to the person skilled in the art, it is preferable for monitoring or processing the primary ion beam 5 to be continuous, and at the same time monitor the material composition of the material sputtering from the area on the specimen 3. This is, for example, preferable in deducing which material is currently being sputtered from the specimen 3. This is provided by the orthogonal TOF-type SIMS 6 by analyzing secondary ions 7. An exemplary embodiment is provided by the compact version of the secondary ion mass spectrometer 6 with a smaller housing, which is particularly preferable in combined devices, which are provided not only with the ion beam column 4, but also, for example, the electron beam column 10 or a laser radiation source, these being the so-called multi-beam devices. The secondary ion 7 yield is dependent on the type of primary ions generated by the ion source, their quantity and energy, the angle of incidence of the focused primary ion beam, material composition of the specimen and other conditions. If the secondary ion 7 yield is small, the SIMS analysis cannot be done or it is not sensitive enough. An inert gas source 8, e.g., argon, xenon or helium and a reactive gas source 9, e.g., iodine, chlorine, oxygen or cesium vapors, are connected to the plasma source of the ion beam column 4 to gain a sufficient secondary ion yield. In a preferable embodiment, the ion beam column 4 is provided with an ECR type plasma source. In a preferred embodiment, xenon and oxygen are used to increase the positively charged ions yield, and a combination of xenon and cesium vapors is used to increase the negatively charged ions yield. Alternatively, it is possible to use other known types of plasma sources to produce primary ions.

(4) The device for mass spectrometry in continuous operation can be preferably provided with an electron beam column 10 to form an electron beam 11. With its help, the specimen 3 can be displayed in higher resolution than the ion beam column 4 would allow. The most preferable is utilization of the scanning electron microscope 10. Alternatively, a transmission electron microscope 10 or scanning transmission electron microscope 10 can also be used. The device according to this description can be further provided with a source of laser radiation, for example, a femtosecond laser, which usually achieves higher processing speeds than the ion beam column 4 and is thus preferable to work higher volumes of the specimen.

(5) The mentioned TOF SIMS 6 depicted in FIG. 2 is adapted for continuous measurement of a wide spectrum of ions. It utilizes a high-voltage pulse to accelerate the secondary ions 7, of which the time-of-flight is measured. First, the secondary ions 7 enter the secondary ion 7 transfer and focus optics 12, then the TOF SIMS chamber 13 and are accelerated by a high-voltage (HV) pulser 14, which in this embodiment is a high potential electrode. Secondary ions 7 with the same kinetic energy are directed over the known distances between the HV pulser 14 and the ion detector 15. Secondary ions 7 reach different speeds, based on the ratio of their mass to the charge. The secondary ion speed is determined from the known time of flight over a known distance, and a specific rate of mass to charge is added to it, from which the type of ion is determined. In one TOF SIMS 6 embodiment, secondary ions 7 are directed by the HV pulser 14 straight to an opposite detector, in another embodiment the ion detector 15 can be placed at an angle other than zero and secondary ions 7 can be directed to the ion detector 15 using an electrostatic mirror or similar particle optics elements. The ion detector can also, for example, be of the micro-channel plate multiplier type or other known types

LIST OF FIGURES

(6) 1vacuum chamber

(7) 2specimen stage

(8) 3specimen

(9) 4ion beam column

(10) 5primary ion beam

(11) 6secondary ion mass spectrometer

(12) 7secondary ions

(13) 8inert gas source

(14) 9reactive gas source

(15) 10electron beam column

(16) 11electron beam

(17) 12secondary ion transfer and focus optics

(18) 13TOF SIMS chamber

(19) 14HV pulser

(20) 15ion detector