APPARATUS FOR THE PREPARATION OF SILANES

Abstract

The invention relates to a process for preparing dimeric and/or trimeric silanes by conversion of monosilane in a plasma and to a plant for performance of the process.

Claims

1-15. (canceled)

16. A plant for performance of a process for preparing dimeric and/or trimeric silanes, the plant comprising: a reactor for generation of a gas discharge, with a dedicated upstream reactant feed and downstream hydrogen-permeable membrane, in order to set a defined ratio of the partial hydrogen pressure to the partial pressure of the gaseous silanes in the resulting phase; wherein said process is for preparing dimeric and/or trimeric silanes of the general formula I: ##STR00003## wherein n =0 or 1, by i) subjecting a reactant stream comprising monosilane of the general formula II and hydrogen, ##STR00004## ii) to a gas discharge, and iii) obtaining dimeric and/or trimeric silanes of the formula I from the resulting phase, and setting a defined ratio of the partial hydrogen pressure to the partial pressure of the silanes which are gaseous under the conditions selected in the resulting phase.

17. The plant according to claim 16, wherein the reactor has a dedicated downstream compressor to increase the pressure of the resulting phase, the compressor more particularly being provided between the reactor and the membrane.

18. The plant according to claim 16, further comprising: a compressor downstream of the reactor, with a condenser dedicated to said compressor and a downstream crude product outlet or crude product vessel dedicated to said condenser, downstream of which is disposed the membrane for setting the partial hydrogen pressure of the resulting phase by contacting of the resulting phase with the membrane, which gives a reactant stream which is transferred by means of a line into the reactor.

19. The plant according to claim 16, having an arrangement for performance of a cycle operation of the process, wherein the reactor has a dedicated downstream compressor, and said compressor has a dedicated condenser, and the plant has the hydrogen-permeable membrane downstream of the condenser, with a line dedicated to one side of the membrane and to the reactor, and a product outlet or product vessel is also provided downstream of the condenser; and discharged hydrogen is removed on the other side of the membrane.

20. The plant according to claim 16, wherein the pressure in process step iii) is elevated relative to the pressure in process stage ii).

21. The plant according to claim 16, wherein the resulting phase in process step iii) has a pressure of 1 bar.sub.ab to 100 bar.sub.ab.

22. The plant according to claim 16, wherein the monosilane in process step ii) is subjected to the gas discharge in the presence of hydrogen at a pressure between 0.05 mbar.sub.abs and 15,000 mbar.sub.abs.

23. The plant according to claim 16, wherein the gas discharge in process step ii) is effected at a pressure between 0.1 mbar.sub.abs and 1,000 mbar.sub.abs.

24. The plant according to claim 16, wherein the gas discharge in process step ii) is effected at a temperature between 60 C. and 10 C.

25. The plant according to claim 16, wherein the reactant stream has a defined ratio of hydrogen and monosilane in percent by volume (% by vol.) of 15:1 to 1:5.

26. The plant according to claim 16, wherein the reactant stream in step ii) is exposed to a nonthermal plasma.

27. The plant according to claim 16, wherein the defined ratio in process step iii) of the partial hydrogen pressure to the partial pressure of the gaseous silanes is set by means of a hydrogen-permeable membrane.

28. The plant according to claim 27, wherein the membrane is permeable to hydrogen and essentially impermeable to silanes.

29. The plant according to claim 27, wherein the membrane comprises the following materials: quartz, metal, metallic alloy, ceramic. zeolite, organic polymer and/or the membrane is a composite membrane having an at least two-layer structure comprising one or more of said materials.

Description

[0058] By continuous fractional distillation, ultrahigh-purity disilane was drawn off as a low boiler at the top of the column 17 and trisilane as a high boiler at the bottom of the column.

[0059] The general process regime of Example 1 is not limited to the specified process parameters, but can be generalized in accordance with the description.

[0060] FIG. 1 and FIG. 2 show a schematic diagram of an inventive plant 0 for performance of the process according to the invention.

[0061] FIG. 3 shows a diagram of the hydrogen permeability of various membrane materials.

LIST OF REFERENCE NUMERALS

[0062] 0 plant [0063] 1 reactor [0064] 2 compressor [0065] 3 condenser [0066] 4 crude product outlet or crude product vessel [0067] 5 membrane [0068] 6 vacuum pump [0069] 7 inverter for plasma production [0070] 8 hydrogen sourcestartup of the process [0071] 9 monosilane source [0072] 10 line/resulting phase [0073] 11 line/reactant feed [0074] 12 line/reactant feed [0075] 13 line/monosilane [0076] 14 line/resulting phase [0077] 15 line/hydrogen [0078] 16 product-conveying pump [0079] 17 columnfractional distillation [0080] 18 lineinert gas for hydrogen removal