HIGH PRECISION HIGH RELIABILITY AND QUICK RESPONSE THERMOSENSITIVE CHIP AND MANUFACTURING METHOD THEREOF

Abstract

A high precision high reliability and quick response thermosensitive chip and manufacturing method thereof is provided, including a thermosensitive ceramic semiconductor substrate; glass protective layers are alternately spray-coated and sintered on the two surfaces of the thermosensitive ceramic semiconductor substrate; and the two surfaces of the thermosensitive ceramic semiconductor substrate having the glass protective layers are printed with metal electrode layers. The thermosensitive chip achieves quick response, accurate control of resistance precision and has high precision; in addition, the glass protective layers thereof enable the thermosensitive chip to have high reliability.

Claims

1-9. (canceled)

10. A high precision high reliability and quick response thermosensitive chip, comprising a thermosensitive ceramic semiconductor substrate, wherein glass protective layers are spray-coated and sintered alternately on two surfaces of the thermosensitive ceramic semiconductor substrate, and the two surfaces of the thermosensitive ceramic semiconductor substrate having the glass protective layers are printed with metal electrode layers.

11. The high precision high reliability and quick response thermosensitive chip of claim 10, wherein the glass protective layers are disposed alternately, and the glass protective layers on the two surfaces of the thermosensitive ceramic semiconductor substrate are disposed correspondingly.

12. The high precision high reliability and quick response thermosensitive chip of claim 10, wherein the metal electrode layers are gold or silver electrodes.

13. The high precision high reliability and quick response thermosensitive chip of claim 11, wherein the metal electrode layers are gold or silver electrodes.

14. A manufacturing method of the high precision high reliability and quick response thermosensitive chip of claim 10, comprising the following steps: (1) providing a thermosensitive ceramic semiconductor substrate; (2) spray-coat glass protective layers: spray-coat the two surfaces of the thermosensitive ceramic semiconductor substrate with glass liquid that made of glass powder correspondingly to form glass protective layers, the glass protective layers are disposed alternately on each of the surfaces of the thermosensitive ceramic semiconductor substrate; (3) sinter glass protective layers: sinter the thermosensitive ceramic semiconductor substrate that is spray-coated with glass protective layers; (4) print metal electrode layers: print metal paste and sinter metal paste to form metal electrode layers on the two surfaces of the thermosensitive ceramic semiconductor substrate having glass protective layers; (5) slice the thermosensitive ceramic semiconductor substrate having glass protective layers and metal electrode layers into square pieces according to prescribed size; (6) arriving at thermosensitive chips.

15. A manufacturing method of the high precision high reliability and quick response thermosensitive chip of claim 11, comprising the following steps: (1) providing a thermosensitive ceramic semiconductor substrate; (2) spray-coating the two surfaces of the thermosensitive ceramic semiconductor substrate with glass liquid that made of glass powder correspondingly to form glass protective layers, the glass protective layers are disposed alternately on each of the surfaces of the thermosensitive ceramic semiconductor substrate; (3) sintering the thermosensitive ceramic semiconductor substrate that is spray-coated with glass protective layers; (4) printing metal paste and sinter metal paste to form metal electrode layers on the two surfaces of the thermosensitive ceramic semiconductor substrate having glass protective layers; (5) slicing the thermosensitive ceramic semiconductor substrate having glass protective layers and metal electrode layers into square pieces according to prescribed size; (6) arriving at thermosensitive chips.

16. A manufacturing method of the high precision high reliability and quick response thermosensitive chip of claim 12, comprising the following steps: (1) providing a thermosensitive ceramic semiconductor substrate; (2) spray-coating the two surfaces of the thermosensitive ceramic semiconductor substrate with glass liquid that made of glass powder correspondingly to form glass protective layers, the glass protective layers are disposed alternately on each of the surfaces of the thermosensitive ceramic semiconductor substrate; (3) sintering the thermosensitive ceramic semiconductor substrate that is spray-coated with glass protective layers; (4) printing metal electrode layers: print metal paste and sinter metal paste to form metal electrode layers on the two surfaces of the thermosensitive ceramic semiconductor substrate having glass protective layers; (5) slicing the thermosensitive ceramic semiconductor substrate having glass protective layers and metal electrode layers into square pieces according to prescribed size; (6) arriving at thermosensitive chips.

17. A manufacturing method of the high precision high reliability and quick response thermosensitive chip of claim 13, comprising the following steps: (1) providing a thermosensitive ceramic semiconductor substrate; (2) spray-coating the two surfaces of the thermosensitive ceramic semiconductor substrate with glass liquid that made of glass powder correspondingly to form glass protective layers, the glass protective layers are disposed alternately on each of the surfaces of the thermosensitive ceramic semiconductor substrate; (3) sintering the thermosensitive ceramic semiconductor substrate that is spray-coated with glass protective layers; (4) printing metal paste and sinter metal paste to form metal electrode layers on the two surfaces of the thermosensitive ceramic semiconductor substrate having glass protective layers; (5) slicing the thermosensitive ceramic semiconductor substrate having glass protective layers and metal electrode layers into square pieces according to prescribed size; (6) arriving at thermosensitive chips.

18. The manufacturing method of the high precision high reliability and quick response thermosensitive chip of claim 14, wherein step (2) spray-coat glass protective layers further comprises: (2a) mounting the thermosensitive ceramic semiconductor substrate on a shielding bar in order to shield area that doesn't need to be spray-coated with glass; (2b) using a sprayer to spray-coat upper and lower surfaces of the mounted thermosensitive ceramic semiconductor substrate with prepared glass liquid that made of glass powder evenly.

19. The manufacturing method of the high precision high reliability and quick response thermosensitive chip of claim 14, wherein the step (3) of sinter glass protective layers further comprises: removing the shielding bar, sinter the spray-coated thermosensitive ceramic semiconductor substrate at a temperature to melt the glass powder, so that the glass and thermosensitive ceramic semiconductor substrate are tightly bonded.

20. The manufacturing method of the high precision high reliability and quick response thermosensitive chip of claim 19, wherein a sintering temperature range of the glass protective layers is 600650 C.

21. The manufacturing method of the high precision high reliability and quick response thermosensitive chip of claim 14, wherein the step (4) print metal electrode layers further comprises: (4a) using a printing machine to print metal paste evenly on upper and lower surfaces of the thermosensitive ceramic semiconductor substrate having glass protective layers; (4b) sintering at a temperature such that the metal electrode layers are closely bonded to the glass protective layers and thermosensitive semiconductor ceramic layer.

22. The manufacturing method of the high precision high reliability and quick response thermosensitive chip of claim 21, wherein a sintering temperature of the metal electrode layers is 9501100 C.

Description

BRIEF DESCRIPTION

[0032] Some of the embodiments will be described in detail, with reference to the following figures, wherein like designations denote like members, wherein:

[0033] FIG. 1 is a three-dimensional view of the thermosensitive chip of embodiments of the present invention; FIG. 2 is a side sectional view of the thermosensitive chip of embodiments of the present invention;

[0034] FIGS. 3A to 3F are the flow charts of the manufacturing process of the thermosensitive chip of embodiments of the present invention.

DETAILED DESCRIPTION

[0035] Referring to FIG. 1 and FIG. 2, the high precision high reliability and quick response thermosensitive chip 10 of embodiments of the present invention, comprising a thermosensitive ceramic semiconductor substrate 1, wherein glass protective layers 2 are spray-coated and sintered alternately on the two surfaces of the thermosensitive ceramic semiconductor substrate 1. The two surfaces of the thermosensitive ceramic semiconductor substrate 1 having the glass protective layers 2 are printed with metal electrode layers 3. The glass protective layers 2 are spaced apart in bars. The glass protective layers 2 on the two surfaces of the thermosensitive ceramic semiconductor substrate 1 are disposed correspondingly. The metal electrode layers 3 are gold or silver electrode layers.

[0036] The following also provides a manufacturing method of the high precision high reliability and quick response thermosensitive chip, the specific steps of which are:

[0037] (1) to make a thermosensitive ceramic semiconductor substrate 1; in this step, the thermosensitive ceramic semiconductor substrate can be made by the traditional ceramic semiconductor process, which flows from preparing ingredients to powdering, isostatic pressing powdering, sintering into dense semiconductor ceramic blocks, cutting semiconductor ceramic blocks and to forming the thermosensitive ceramic semiconductor substrate 1 (as shown in FIG. 3A).

[0038] (2) to spray-coat glass protective layers 2; as shown in FIG. 3B, (2a) Mount: the thermosensitive ceramic semiconductor substrate 1 is mounted on a shielding bar 20 in order to isolate the area that doesn't need to be spray-coated.

[0039] (2b) spray-coat glass: using a sprayer to spray-coat the upper and lower surfaces of the properly mounted thermosensitive ceramic semiconductor substrate 1 with prepared glass liquid that made of glass powder evenly.

[0040] Therefore, glass protective layers 2 are formed on the two surfaces of the thermosensitive ceramic semiconductor substrate 1. The glass protective layers 2 on each of the surfaces of the thermosensitive ceramic semiconductor substrate 1 are disposed alternately, therefore separating each of the surfaces of the thermosensitive ceramic semiconductor substrate 1 into a non-conductive region with the glass protective layer 2 and a conductive region without glass protective layer.

[0041] (3) to sinter glass protective layers 2; after removing the shielding bar 20, as shown in FIG. 3C, the spray-coated thermosensitive ceramic semiconductor substrate 1 is sintered under 600650 C. to melt the glass powder, so that the glass and thermosensitive ceramic semiconductor substrate 1 are tightly bonded.

[0042] (4) to print metal electrode layers 3; as shown in FIG. 3D, to print metal paste and sinter the metal paste to form metal electrode layers 3 on the two surfaces of the thermosensitive ceramic semiconductor substrate 1 having glass protective layers 2. Specifically, (4a) to print metal paste: using printing machine to print the metal paste evenly on the upper and lower surfaces of the thermosensitive ceramic semiconductor substrate 1 having glass protective layers 2.

[0043] (4b) sinter metal electrode layers 3: sinter at a temperature such that the metal electrode layers 3 are closely bonded to the glass protective layers 2 and the ceramic layer of the thermosensitive ceramic semiconductor substrate 1. The sintering temperature of the metal electrode layers 3 is 9501100 C.

[0044] (5) to slice: as shown in FIG. 3E, the above mentioned thermosensitive ceramic semiconductor substrate having glass protective layers and metal electrode layers is sliced into square pieces according to the prescribed size.

[0045] (6) to acquire thermosensitive chips; the structure of the thermosensitive chip 10 is as shown in FIG. 3F. Both the metal electrode layers 3 and the glass protective layers 2 are kept on each of the two surfaces of the thermosensitive ceramic semiconductor substrate 1 while slicing.

[0046] Although the present invention has been disclosed in the form of preferred embodiments and variations thereon, it will be understood that numerous additional modifications and variations could be made thereto without departing from the scope of the invention.

[0047] For the sake of clarity, it is to be understood that the use of a or an throughout this application does not exclude a plurality, and comprising does not exclude other steps or elements.