METHOD FOR FORMING FILM ON FLEXIBLE SUBSTRATE BY VAPOR DEPOSITION

Abstract

A method for forming a film on a flexible substrate by vapor deposition is provided, wherein the method is capable of reducing in size of the entire apparatus and improving an efficiency to thereby enhance productivity. A film formation method includes the steps of: transporting the flexible substrate through a first zone in a vacuum chamber, into which a raw material gas containing metal or silicon is introduced, so that components included in the raw material gas are adsorbed onto the flexible substrate, and performing sputter deposition by transporting the flexible substrate through a second zone in the vacuum chamber, the second zone being separated from the first zone and including a target material containing metal or silicon.

Claims

1. A film formation method for forming a thin film on a flexible substrate, the method comprising the steps of: transporting the flexible substrate through a first zone in a vacuum chamber, into which a raw material gas containing metal or silicon is introduced, so that components included in the raw material gas are adsorbed onto the flexible substrate, and performing sputter deposition by transporting the flexible substrate through a second zone in the vacuum chamber, the second zone being separated from the first zone and including a target material containing metal or silicon.

2. The film formation method of claim 1, further comprising a step of transporting the flexible substrate through a third zone into which an inert gas is introduced between the steps of transporting the flexible substrate through the first zone and transporting the flexible substrate through the second zone.

3. The film formation method of claim 1, wherein a component of metal contained in the raw material gas is the same as a component of metal contained in the target material.

4. The film formation method of claim 1, wherein a component of metal contained in the raw material gas is different from a component of metal contained in the target material.

5. The film formation method according to claim 1, wherein the target material includes silicon.

6. The film formation method of claim 1, wherein the second zone includes a plurality of the target materials, and at least two of the target materials are different in the components of materials included or different in percentages of the components.

7. The film formation method of claim 1, wherein film formation is performed by reactive sputtering in the second zone.

8. The film formation method of claim 1, wherein a film thickness of a sputter film formed after the flexible substrate passes through the second zone once is 0.2 nm or more.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0029] FIG. 1 is a schematic cross-sectional view of a vacuum chamber that enables a film formation method according to an embodiment of the present invention.

DESCRIPTION OF REPRESENTATIVE EMBODIMENTS

[0030] Please note that the invention should not necessarily be limited to the representative embodiments. The representative embodiments are provided for the purpose of illustrating the type embodiments within the invention.

[0031] A film formation method according to the present invention is a method for forming a thin film on a flexible substrate, the method including the steps of: transporting the flexible substrate through a first zone in a vacuum chamber, into which a raw material gas containing metal or silicon is introduced, so that components included in the raw material gas are adsorbed onto the flexible substrate, and performing sputter deposition by transporting the flexible substrate through a second zone in the vacuum chamber, the second zone being separated from the first zone and including a target material containing metal or silicon.

[0032] In the step of transporting the flexible substrate through the first zone, the raw material gas containing metal or silicon covers the entire surface of the flexible substrate in a three dimensional manner, including holes and pits present on the flexible substrate. In the subsequent step of transporting the flexible substrate through the second zone, a thin film containing components which constitute the sputtering target is expected to be formed by sputter deposition. Accordingly, deposition for a film thickness from a few atomic layers to a few tens or a few hundreds of atomic layers is expected depending on the sputter deposition conditions. By repeating these steps, a film thickness corresponding to one atomic layer level is achieved in the first zone, and a film thickness corresponding to the sputter deposition is achieved in the second zone. Although sputter deposition is a process having many defects, the raw material gas in the first zone covers the defects, if any, to thereby form a generally good thin film. The above may be applied to a dielectric film, gas barrier film and the like.

[0033] In addition, the method may further include a step of transporting the flexible substrate through a third zone into which an inert gas is introduced between the steps of transporting the flexible substrate through the first zone and transporting the flexible substrate through the second zone. This can prevent gases in the first zone and the second zone from being mixed and avoid unintentional film deposition onto an inner wall of the chamber and onto the flexible substrate.

[0034] In addition, a thin film of a single material can be produced when the components of metal contained in the raw material gas are the same as the components of metal contained in the target material.

[0035] On the other hand, a mixture thin film or a composite thin film containing a plurality of metals may be produced when the components of metal contained in the raw material gas are different from the components of metal contained in the target material. Further, the term components of metal refers not only to the components contained in the raw material gas and the target material, but also the components of main metal (such as atomic ratio and weight ratio).

[0036] These can be selected depending on the application of a thin film.

[0037] Further, when the target material includes silicon, a silicon-containing thin film can be produced in the step of sputter deposition without using an expensive silicon-containing raw material gas.

[0038] In addition, when the second zone includes a plurality of target materials with different material properties included or different component ratio of the material properties included, a thin film can be produced with a variety of compositions.

[0039] In addition, when reactive sputtering is used as a sputter deposition, an inexpensive non-oxide target such as metal can be used.

[0040] In addition, when the film thickness of the sputter film formed after the flexible substrate passes through the second zone once is determined as 0.2 nm or more, the film formation speed can be effectively improved.

[0041] With reference to FIG. 1, an embodiment of the present invention will be described in detail. FIG. 1 is a schematic cross-sectional view of a vacuum chamber that enables a film formation method according to an embodiment of the present invention.

[0042] A vacuum chamber 100 can be separated into at least three zones by partitions 202. A flexible substrate 205 reciprocates among the respective zones. A raw material gas is introduced into a first zone 101. Sputtering targets 203 are disposed in a second zone 102 so that the target material is set corresponding to the film type of the target of film formation. The sputtering targets 203 may be the same material type or may have the same composition ratio. Alternatively, only one or a plurality of the sputtering targets 203 or each sputtering target 203 may be different from each other. As seen from the FIGURE, when other sputtering targets 204 are disposed between the plurality of sputtering targets 203 so that the sputtering targets 203 and 204 are located on both sides of the flexible substrate 205, film formation can be performed on both surfaces. When different materials are used for the sputtering targets 203 and the sputtering targets 204, thin films of different material can be formed on one and the other surfaces of the flexible substrate 205.

[0043] Here, when the main component of the metal or silicon mainly contained in the raw material gas is the same as the main component of the metal or silicon mainly contained in the sputtering target, a thin film of the same (a single) component can be formed. However, when they are different from each other, a thin film of a plurality of components can be formed. Of the components which constitute the film, when the components of sputter deposition accounts for a large portion and the components of the raw material gas adsorbed in the first zone 101 accounts for a small portion, the components of the raw material gas may also be used as a doping material for the sputter film.

[0044] The flexible substrate 205 is set in the vacuum chamber 100 in the film formation apparatus, and make a vacuum in the chamber. Since the required degree of vacuum varies depending on the film properties or allowable processing speed in film formation, it should not be unambiguously determined. The material for the flexible substrate 205 may be PET (polyethylene terephthalate), PEN (polyethylene naphthalate), polyimide or the like, or any other material including a foil, paper, and cloth that can bear the transport of the substrate in the apparatus configuration. The material may also be silicon or glass which is thinned and curved. A composite material containing the above material can also be used.

[0045] If necessary, the vacuum chamber 100 is heated as appropriate.

[0046] Subsequently, a raw material gas containing metal or silicon is introduced into the first zone 101, and argon gas is introduced into the second zone 102. In the case where reactive sputtering is performed in the second zone 102, a reactive gas such as oxygen is also introduced. During this operation, cleaning on the target surface by pre-sputtering is also performed.

[0047] An inert argon or nitrogen gas may be introduced as a purge gas into the third zone 103. Here, a gas pressure of the third zone 103 may be set to be the highest among those of the other zones. Accordingly, the probability or percentage of mixture of the precursor introduced into the first zone 101 and the precursor introduced into the second zone 102 can be reduced. However, this does not apply to a case where a component inactive to the raw material gas introduced into the first zone 101 is selected as a gas for sputtering.

[0048] Then, sputter deposition is performed along with the start of transportation of the flexible substrate 205. Although general DC sputtering can be used, radio frequency waves, microwaves, an inductively coupled plasma (ICP), and the like can also be used as a plasma excitation source depending on the number of cathodes (targets). Known techniques may also be applied to prevent arcing. Examples of these techniques include use of a pulsed DC power supply and use of a DC power supply with an arc-cut control circuit.

[0049] The power applied to plasma during sputter deposition can be freely set depending on desired film properties and film formation speed. In sputter deposition, the film thickness of the produced film generally increases in proportion to discharge power. By appropriately setting the film thickness, adsorption of the raw material gas and sputter deposition can be appropriately repeated in a complementary and alternative manner.

[0050] The flexible substrate 205 reciprocates between the first zone 101 and the second zone 102 until a desired film thickness is obtained. Since the transport speed of the substrate is limited by the throughput required and permitted by the film properties, it is not advantageous to use a pre-defined speed.

[0051] After the film formation is performed until the desired film thickness is obtained, the plasma is turned off, supply of gases including the raw material gas is stopped, and the vacuum chamber 100 is evacuated to completely discharge the gas remaining in the chamber. After that, the vacuum chamber 100 is vented to remove the flexible substrate 205. In a case where the flexible substrate 205 is paid out and taken up in a roll-to-roll manner by a separate chamber, the separate chamber is vented to remove the roll on which the film is formed.

[0052] Thus, the film formation is complete.

INDUSTRIAL APPLICABILITY

[0053] The present invention can be used in the process of producing a thin film on a flexible substrate while transporting the flexible substrate.

REFERENCE SIGNS LIST

[0054] 100 vacuum chamber

[0055] 101 first zone

[0056] 102 second zone

[0057] 103 third zone

[0058] 201 roller

[0059] 202 zone separator

[0060] 203 sputtering target

[0061] 204 sputtering target

[0062] 205 flexible substrate