QUANTUM DOTS WITH REDUCED SATURATION QUENCHING
20170207370 ยท 2017-07-20
Inventors
- Roelof Koole (Eindhoven, NL)
- Manuela Lunz (Waalre, NL)
- Dirk Veldman (Eindhoven, NL)
- Patrick John Baesjou (Eindhoven, NL)
Cpc classification
H10H20/872
ELECTRICITY
G02B6/1225
PHYSICS
International classification
Abstract
The invention provides a lighting device comprising (a) a light converter comprising a light receiving face; and (b) a solid state light source configured to generate a light source light with a photon flux of at least 10 W/cm.sup.2 at the light receiving face, wherein the light converter is configured to convert at least part of the light source light into light converter light having a first frequency, wherein the light converter comprises a semiconductor quantum dot in an optical structure selected from a photonic crystal structure and a plasmonic structure, wherein the optical structure is configured to increase the photon density of states in the light converter resonant with the first frequency for reducing saturation quenching, and wherein the quantum dot has a quantum efficiency of at least 80%.
Claims
1. A lighting device comprising: a) a light converter comprising a light receiving face; b) a solid state light source configured to generate a light source light with a photon flux of at least 10 W/cm.sup.2 at the light receiving face, wherein the light converter is configured to convert at least part of the light source light into light converter light having a first frequency, wherein the light converter comprises a semiconductor quantum dot in an optical structure selected from a photonic crystal structure and a plasmonic structure, wherein the optical structure is configured to increase the photon density of states in the light converter resonant with the first frequency for reducing saturation quenching, and wherein the quantum dot has a quantum efficiency of at least 80%.
2. The lighting device according to claim 1, wherein the light converter comprises a plurality of quantum dots in the optical structure, wherein the optical structure comprises said plasmonic structure, and wherein the plasmonic structure is an irregular plasmonic structure.
3. The lighting device according to claim 1, wherein the light converter comprises a plurality of quantum dots in the optical structure, wherein the optical structure comprises said plasmonic structure, and wherein the plasmonic structure is a regular plasmonic structure.
4. The lighting device according to claim 1, wherein the light converter comprises a polycrystalline photonic crystal structure comprising a plurality of said quantum dots.
5. The lighting device according to claim 1, wherein the quantum dot luminescent core has a shortest distance to a metallic structure comprised by the optical structure of at least 5 nm.
6. The lighting device according to claim 1, wherein the quantum dot comprises a silica coating or a wherein the optical structure comprises a silica structure comprising quantum dots.
7. The lighting device according to claim 1, wherein the light converter comprises a plurality of different semiconductor quantum dots configured to convert at least part of the light source light into light converter light having a distribution of first frequencies.
8. The lighting device according to claim 7, comprising a plurality of optical structure domains, wherein the optical structure domains are configured to increase the photon density of states in the vicinity of one or more quantum dots and resonant with the first frequency of said one or more quantum dots.
9. The lighting device according to claim 1, wherein the quantum dot(s) has (have) a quantum efficiency of at least 90% and wherein the quantum dot(s) has (have) in the light converter a radiative decay time of 4 ns or less.
10. A light converter comprising a light receiving face configured to receive light source light from a light source, wherein the light converter is configured to convert at least part of the light source light into light converter light having a first frequency, wherein the light converter comprises a semiconductor quantum dot in an optical structure selected from a photonic crystal structure and a plasmonic structure, wherein the optical structure is configured to increase the photon density of states in the light converter and resonant with the first frequency for reducing saturation quenching, and wherein the quantum dot has a quantum efficiency of at least 80%.
11. The light converter according to claim 10, wherein the light converter comprises a polycrystalline photonic crystal structure comprising a plurality of quantum dots.
12. The light converter according to claim 10, wherein the quantum dot comprises a silica coating or a wherein the optical structure comprises a silica structure comprising said quantum dots.
13. The light converter according to claim 10, wherein the quantum dot has a shortest distance to a metallic structure comprised by the optical structure of at least 5 nm.
14. The light converter according to claim 10, wherein the optical structure comprises a plasmonic optical structure comprising a silica structure comprising said quantum dots with a shortest distance to a metallic structure comprised by the optical structure of at least 5 nm.
15. Use of a light converter comprising a semiconductor quantum dot in an optical structure selected from a photonic crystal structure and a plasmonic structure, wherein the optical structure is configured to increase the photon density of states at the quantum dot and resonant with the first frequency for reducing saturation quenching, and wherein the quantum dot has a quantum efficiency of at least 80%, to prevent saturation quenching of the quantum dot.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0090] Embodiments of the invention will now be described, by way of example only, with reference to the accompanying schematic drawings in which corresponding reference symbols indicate corresponding parts, and in which:
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[0096] The drawings are not necessarily on scale.
DETAILED DESCRIPTION OF THE EMBODIMENTS
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[0098] The light converter may include a light receiving face 110, which is directed to the light source 10, and a light exit face 120 (in general opposite of the light receiving face 110). From this face light converter light 101 may emanate. However, it is not excluded that this light may also escape from one or more other faces, including the light receiving face. However, especially the light receiving face may be directed to the light source, and the light exit face may be directed to the exterior of the lighting device. The light receiving face 110 is configured upstream of the light exit face 120, and both are configured downstream of the light source 10. The light escaping from the converter at the downstream side thereof, i.e. escaping from the light exit face 120 may at least include the light converter light 101, which includes emission form the quantum dots (not depicted; see below), but may optionally also include non-converted light source light 11. This may especially relevant when the light source light 11 includes visible light, like blue light. The combination of light source light and light converter light is indicated with reference 2.
[0099] Note that in the configurations of
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[0102] In
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[0104] Other embodiments may alternatively or additionally include e.g. structures where the QDs themselves are actually part of the regular photonic or plasmonic structures. For example, a very regular array or superlattice of QDs could itself be a plasmonic or photonic structure. This effect can also be used to increase the light output per time as the QDs earlier get a chance to emit again. Therefore, this method can also be used to reduce the amount of material needed to achieve a certain level of conversion without running into a problem with saturation.
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