Polycrystalline compacts including nanoparticulate inclusions, cutting elements and earth-boring tools including such compacts, and methods of forming same
09708857 ยท 2017-07-18
Assignee
Inventors
Cpc classification
B01J3/06
PERFORMING OPERATIONS; TRANSPORTING
B22F2005/001
PERFORMING OPERATIONS; TRANSPORTING
C22C26/00
CHEMISTRY; METALLURGY
C22C2026/008
CHEMISTRY; METALLURGY
B22F7/06
PERFORMING OPERATIONS; TRANSPORTING
B24D3/06
PERFORMING OPERATIONS; TRANSPORTING
E21B10/567
FIXED CONSTRUCTIONS
C22C2026/006
CHEMISTRY; METALLURGY
B24D18/0054
PERFORMING OPERATIONS; TRANSPORTING
International classification
E21B10/46
FIXED CONSTRUCTIONS
E21B10/567
FIXED CONSTRUCTIONS
B24D99/00
PERFORMING OPERATIONS; TRANSPORTING
B24D3/06
PERFORMING OPERATIONS; TRANSPORTING
B01J3/06
PERFORMING OPERATIONS; TRANSPORTING
B24D18/00
PERFORMING OPERATIONS; TRANSPORTING
C22C26/00
CHEMISTRY; METALLURGY
Abstract
A polycrystalline compact comprises a plurality of grains of hard material and a plurality of nanoparticles disposed in interstitial spaces between the plurality of grains of hard material. The nanoparticles have cores of a first material and at least one oxide material on the cores. An earth-boring tool comprises such a polycrystalline compact. A method of forming a polycrystalline compact comprises combining a plurality of hard particles with a plurality of nanoparticles to form a mixture and sintering the mixture to form a polycrystalline hard material comprising a plurality of interbonded grains of hard material. A method of forming a cutting element comprises infiltrating interstitial spaces between interbonded grains of hard material in a polycrystalline material with a plurality of nanoparticles.
Claims
1. A polycrystalline compact, comprising: a plurality of grains of hard material; and a plurality of nanoparticles disposed in interstitial spaces between the plurality of grains of hard material, wherein each nanoparticle of the plurality comprises: a core comprising a first material; and at least one oxide material on the core, the at least one oxide material different from the first material.
2. The polycrystalline compact of claim 1, wherein the plurality of grains of hard material comprises a plurality of grains of diamond.
3. The polycrystalline compact of claim 1, wherein the grains of hard material exhibit a first thermal conductivity at 23 C. and the nanoparticles exhibit a second thermal conductivity at 23 C., and wherein the second thermal conductivity is less than about 50 Wm.sup.1K.sup.1.
4. The polycrystalline compact of claim 1, further comprising a catalyst material in the interstitial spaces between the plurality of grains of hard material.
5. The polycrystalline compact of claim 1, wherein the grains of hard material exhibit a first thermal conductivity at 23 C. and the nanoparticles exhibit a second thermal conductivity at 23 C., wherein the second thermal conductivity is less than about 0.2 times the first thermal conductivity.
6. The polycrystalline compact of claim 1, wherein the core comprises at least two particles.
7. The polycrystalline compact of claim 1, wherein the core comprises tungsten carbide and the at least one oxide material on the core comprises alumina.
8. The polycrystalline compact of claim 5, wherein the at least one oxide material on the core comprises a first oxide material comprising alumina, a second oxide material comprising zirconia, and a third oxide material comprising alumina.
9. The polycrystalline compact of claim 1, wherein the plurality of nanoparticles occupies from about 0.01% to about 50% by volume of the polycrystalline compact.
10. The polycrystalline compact of claim 1, further comprising a substrate bonded to the plurality of grains of hard material.
11. An earth-boring tool comprising the polycrystalline compact of claim 1.
12. The earth-boring tool of claim 11, wherein the earth-boring tool is a fixed-cutter rotary drill bit.
13. A method of forming a polycrystalline compact, comprising: combining a plurality of hard particles with a plurality of nanoparticles to form a mixture, each nanoparticle of the plurality of nanoparticles comprising: a core comprising a first material and; at least one oxide material on the core, the at least one oxide material different from the first material; and sintering the mixture to form a polycrystalline hard material comprising a plurality of interbonded grains of hard material.
14. The method of claim 13, wherein combining a plurality of hard particles with a plurality of nanoparticles to form a mixture comprises combining a plurality of diamond particles with a plurality of nanoparticles to form the mixture.
15. The method of claim 13, wherein combining a plurality of hard particles with a plurality of nanoparticles to form a mixture comprises combining a plurality of hard particles exhibiting a first thermal conductivity at 23 C. with nanoparticles exhibiting a second thermal conductivity at 23 C., wherein the second thermal conductivity is less than about 0.2 times the first thermal conductivity.
16. The method of claim 15, wherein combining a plurality of hard particles having a first thermal conductivity at 23 C. with a plurality of nanoparticles having a second thermal conductivity at 23 C. to form a mixture comprises combining a plurality of hard particles with nanoparticles comprising a material having a thermal conductivity less than about 50 Wm.sup.1K.sup.1.
17. The method of claim 13, further comprising adding a catalyst to the mixture, the catalyst selected to promote formation of inter-granular bonds between the grains of hard material.
18. A method of forming a cutting element comprising a polycrystalline compact, the method comprising infiltrating interstitial spaces between interbonded grains of hard material in a polycrystalline material with a plurality of nanoparticles, each nanoparticle of the plurality of nanoparticles comprising: a core comprising a first material and; at least one oxide material on the core, the at least one oxide material different from the first material.
19. The method of claim 18, wherein infiltrating interstitial spaces between interbonded grains of hard material in a polycrystalline material with a plurality of nanoparticles comprises infiltrating interstitial spaces between interbonded diamond grains with a plurality of nanoparticles.
20. The method of claim 18, wherein infiltrating interstitial spaces between interbonded grains of hard material in a polycrystalline material with a plurality of nanoparticles comprises infiltrating interstitial spaces between interbonded grains of hard material in a polycrystalline material with a material having a thermal conductivity of less than about 50 Wm.sup.1K.sup.1.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1) While the specification concludes with claims particularly pointing out and distinctly claiming what are regarded as embodiments of the disclosure, various features and advantages of embodiments of the disclosure may be more readily ascertained from the following description of some embodiments of the disclosure when read in conjunction with the accompanying drawings, in which:
(2)
(3)
(4)
(5)
DETAILED DESCRIPTION
(6) The illustrations presented herein are not actual views of any particular polycrystalline compact, microstructure of a polycrystalline compact, particle, cutting element, or drill bit, and are not drawn to scale, but are merely idealized representations employed to describe the present disclosure. Additionally, elements common between figures may retain the same numerical designation.
(7) As used herein, the term drill bit means and includes any type of bit or tool used for drilling during the formation or enlargement of a wellbore and includes, for example, rotary drill bits, percussion bits, core bits, eccentric bits, bi-center bits, reamers, mills, drag bits, roller cone bits, hybrid bits, and other drilling bits and tools known in the art.
(8) As used herein, the term particle means and includes any coherent volume of solid matter having an average dimension of about 2 mm or less. Grains (i.e., crystals) and coated grains are types of particles. As used herein, the term nanoparticle means and includes any particle having an average particle diameter of about 500 nm or less. Nanoparticles include grains in a polycrystalline material having an average grain size of about 500 nm or less.
(9) As used herein, the term polycrystalline material means and includes any material comprising a plurality of grains or crystals of the material that are bonded directly together by inter-granular bonds. The crystal structures of the individual grains of the material may be randomly oriented in space within the polycrystalline material.
(10) As used herein, the term polycrystalline compact means and includes any structure comprising a polycrystalline material formed by a process that involves application of pressure (e.g., compaction) to the precursor material or materials used to form the polycrystalline material.
(11) As used herein, the term inter-granular bond means and includes any direct atomic bond (e.g., covalent, metallic, etc.) between atoms in adjacent grains of material.
(12) As used herein, the term catalyst material refers to any material that is capable of catalyzing the formation of inter-granular bonds between grains of hard material during a sintering process (e.g., an HTHP process). For example, catalyst materials for diamond include cobalt, iron, nickel, other elements from Group VIII-A of the periodic table of the elements, and alloys thereof.
(13) As used herein, the term hard material means and includes any material having a Knoop hardness value of about 3,000 Kg.sub.f/mm.sup.2 (29,420 MPa) or more. Hard materials include, for example, diamond and cubic boron nitride.
(14) As used herein, the term low thermal conductivity nanoparticle, means and includes a particle comprising a material that exhibits a bulk thermal conductivity of about one hundred watts per meter-Kelvin (100 Wm.sup.1K.sup.1) or less at a temperature of 23 C. Low thermal conductivity nanoparticles include, for example, nanoparticles at least partially formed from alumina.
(15)
(16) In some embodiments, the polycrystalline material 12 comprises polycrystalline diamond. In such embodiments, the cutting element 10 may be referred to as a PDC cutting element. In other embodiments, the polycrystalline material 12 may comprise another hard material such as, for example, polycrystalline cubic boron nitride.
(17)
(18) The overall reduction of thermal conductivity in the polycrystalline material 12 (
(19) In some embodiments, and as shown in
(20) In additional embodiments, the grains 18 of the polycrystalline material 12 may have a multi-modal (e.g., bi-modal, tri-modal, etc.) grain size distribution. For example, the polycrystalline material 12 may comprise a multi-modal grain size distribution as disclosed in at least one of U.S. Pat. No. 8,579,052, issued Nov. 12, 2013, titled Polycrystalline Compacts Including In-Situ Nucleated Grains, Earth-Boring Tools Including Such Compacts, and Methods of Forming Such Compacts and Tools; U.S. Pat. No. 8,727,042, issued May 20, 2014; titled Polycrystalline Compacts Having Material Disposed in Interstitial Spaces Therein, and Cutting Elements Including Such Compacts; and U.S. Pat. No. 8,496,076, issued Jul. 30, 2013, titled Polycrystalline Compacts Including Nanoparticulate Inclusions, Cutting Elements and Earth-Boring Tools Including Such Compacts, and Methods of Forming Such Compacts; the disclosure of each of which is incorporated herein in its entirety by this reference.
(21) As known in the art, the average grain size of grains within a microstructure may be determined by measuring grains of the microstructure under magnification. For example, a scanning electron microscope (SEM), a field emission scanning electron microscope (FESEM), or a transmission electron microscope (TEM) may be used to view or image a surface of a polycrystalline material 12 (e.g., a polished and etched surface of the polycrystalline material 12). Commercially available vision systems are often used with such microscopy systems, and these vision systems are capable of measuring the average grain size of grains within a microstructure.
(22) In some embodiments, at least some of the grains 18 of hard material may comprise in-situ nucleated grains 18 of hard material, as disclosed in U.S. Pat. No. 8,579,052, previously incorporated herein by reference.
(23) The interstitial spaces 22 between the grains 18 of hard material may be at least partially filled with low thermal conductivity particles 19 and with a catalyst material.
(24) The low thermal conductivity particles 19 disposed in the interstitial spaces 22 between the interbonded grains 18 of hard material may comprise a material having a lower thermal conductivity than the interbonded grains 18 of hard material. For example, the interbonded grains 18 of hard material may have a thermal conductivity of between about 500 Wm.sup.1K.sup.1 and about 2600 Wm.sup.1K.sup.1 at 23 C. The low thermal conductivity particles 19 may comprise a material that exhibits a thermal conductivity of about 100 Wm.sup.1K.sup.1 or less at 23 C. in bulk form, or even about 50 Wm.sup.1K.sup.1 or less at 23 C. in bulk form. In one embodiment, the particles 19 may have a thermal conductivity of about 1 Wm.sup.1K.sup.1 or less at 23 C. In another embodiment, the particles 19 may have a thermal conductivity of about 0.2 Wm.sup.1K.sup.1 or less at 23 C., such as particles having nano-scale layers of alumina and tungsten. The material of the particles 19 may have a bulk thermal conductivity of less than about 20% of the thermal conductivity of the interbonded grains 18, less than about 5% of the thermal conductivity of the interbonded grains 18, or even less than about 1% of the thermal conductivity of the interbonded grains 18. The approximate bulk thermal conductivities at 23 C. for some materials are shown below in Table 1.
(25) TABLE-US-00001 TABLE 1 Approximate Thermal Conductivity Material at 23 C. (Wm.sup.1K.sup.1) Diamond (type IIa) 2300 Cubic boron nitride varies - 1300 is max theoretical bulk Diamond (type I) 895 Platinum 716 Silicon carbide 490 Copper 401 Tungsten 174 Silicon 148 Tungsten carbide 84 Alumina (polycrystalline) 36 Titanium carbide 31 Titanium 21 Titanium dioxide (polycrystalline) 8.4 Zirconia 2.0 Silicon dioxide (polycrystalline) 1.4 Selenium 0.5 Molybdenum disulfide 0.2
(26) Thermal conductivity of a material may vary as a function of temperature. For example, the thermal conductivity of some materials may decrease as temperature increases. The thermal conductivity of other materials may increase as temperature increases. A low thermal conductivity material may be selected based on its thermal conductivity at ambient room temperature (e.g., 23 C.), thermal conductivity at an operating temperature (e.g., 750 C.) or thermal conductivity at any other temperature.
(27) The low thermal conductivity material of the particles 19 may comprise, for example, one or more of elementary metals (e.g., commercially pure tungsten), metal alloys (e.g., tungsten alloys), refractory metals, intermetallic compounds, ceramics (e.g., carbides, nitrides, oxides), and combinations thereof. As particular non-limiting examples, the low thermal conductivity particles 19 may comprise at least one of alumina and zirconia.
(28) In some embodiments, the low thermal conductivity particles 19 may, at least initially (prior to a sintering process used to form the polycrystalline material 12), comprise at least two materials, as does a low thermal conductivity particle 100 illustrated in
(29) Each coating of the at least one coating 104, 106, 108 may have a thickness of between about two nanometers (2 nm) and about five nanometers (5 nm), such as a thickness of about two nanometers (2 nm) to about three nanometers (3 nm). In some embodiments, each of the at least one coating 104, 106, 108 may be conformally deposited on the core 102. In other embodiments, one or more of the coatings 104, 106, 108 may be formed partially over the core 102, or may be formed having variable thicknesses. In some embodiments, multiple coatings of the same material may be formed over the core 102, For example, a first coating 104, a second coating 106, and a third coating 108 may be formed over the core 102, each coating 104, 106, 108 comprising alumina, In alternative embodiments, at least two coatings 104, 106, 108 comprising different materials may be formed on the core 102. For example, in one embodiment, the first coating 104 comprising alumina may be formed over the core 102, the second coating 106 comprising zirconia may be formed over the first coating 104, and the third coating 108 comprising alumina may be formed over the second coating 106, While
(30) By way of example and not limitation, processes such as liquid sol-gel, flame spray pyrolysis, chemical vapor deposition (CVD), physical vapor deposition (PVD) (e.g., sputtering), and atomic layer deposition (ALD), may be used to provide the at least one coating 104, 106, 108 on the core 102. Other techniques that may be used to provide the at least one coating 104, 106, 108 on the core 102 include colloidal coating processes, plasma coating processes, microwave plasma coating processes, physical admixture processes, van der Waals coating processes, and electrophoretic coating processes. In some embodiments, the at least one coating 104, 106, 108 may be provided on the core 102 in a fluidized bed reactor (not shown).
(31) Referring again to
(32) Some of the low thermal conductivity particles 19 may be mechanically bonded to the grains 18 of hard material after the sintering process (e.g., an HPHT process) used to form the polycrystalline material 12.
(33) In some embodiments, the polycrystalline material 12 may also include a catalyst material 24 disposed in interstitial spaces 22 between the interbonded grains 18 of the polycrystalline hard material and between the particles 19. The catalyst material 24 may comprise a catalyst used to catalyze formation of inter-granular bonds 26 between the grains 18 of hard material in the polycrystalline material 12. In other embodiments, however, the interstitial spaces 22 between the grains 18 and the particles 19 in some or all regions of the polycrystalline material 12 may be at least substantially free of such a catalyst material 24. In such embodiments, the interstitial spaces 22 may comprise voids filled with gas (e.g., air).
(34) In embodiments in which the polycrystalline material 12 comprises polycrystalline diamond, the catalyst material 24 may comprise a Group VIII-A element iron, cobalt, or nickel) or an alloy thereof, and the catalyst material 24 may comprise between about one tenth of one percent (0.1%) and about ten percent (10%) by volume of the hard polycrystalline material 12. In additional embodiments, the catalyst material 24 may comprise a carbonate material such as a carbonate of one or more of magnesium, calcium, strontium, and barium. Carbonates may also be used to catalyze the formation of polycrystalline diamond.
(35) The layer of hard polycrystalline material 12 of the cutting element 10 may be formed using a high-temperature/high-pressure (HTHP) process. Such processes, and systems for carrying out such processes, are generally known in the art. In some embodiments, the polycrystalline material 12 may be formed on a supporting substrate 16 (as shown in
(36) To form the polycrystalline material 12 in an HTHP process, a particulate mixture comprising particles (e.g., grains) of hard material and low thermal conductivity particles 100 (
(37) In embodiments in which a carbonate catalyst material 24 (e.g., a carbonate of one or more of magnesium, calcium, strontium, and barium) is used to catalyze the formation of polycrystalline diamond, the particulate mixture may be subjected to a pressure greater than about 7.7 GPa and a temperature greater than about 2,000 C.
(38) The particulate mixture may comprise hard particles for forming the grains 18 of hard material previously described herein. The particulate mixture may also comprise at least one of particles of catalyst material 24, and low thermal conductivity particles 100 for forming the particles 19 in the polycrystalline material 12. In some embodiments, the particulate mixture may comprise a powder-like substance. In other embodiments, however, the particulate mixture may be carried by (e.g., on or in) another material, such as a paper or film, which may be subjected to the HTHP process. An organic binder material also may be included with the particulate mixture to facilitate processing.
(39) Thus, in some embodiments, the low thermal conductivity particles 100 may be admixed with the hard particles used to form the grains 18 to form a particulate mixture, which then may be sintered in an HPHT process.
(40) In some embodiments, the low thermal conductivity particles 100 may be admixed with the hard particles used to form the grains 18 of hard material prior to a modified HPHT sintering process used to synthesize a nanoparticulate composite that includes the low thermal conductivity particles 100 and nanoparticles of hard material.
(41) In some embodiments, the low thermal conductivity particles 100 may be grown on, attached to, adhered to, or otherwise connected to the hard particles used to form the grains 18 prior to the sintering process. The low thermal conductivity particles 100 may be attached to the hard particles by functionalizing exterior surfaces of at least one of the low thermal conductivity particles 100 and the hard particles. After attaching the low thermal conductivity particles 100 to the hard particles, the resulting particulate mixture may be subjected to an HPHT process to form a polycrystalline material 12 comprising grains of hard material 18 and low thermal conductivity particles 19, as described above.
(42) In additional embodiments, the low thermal conductivity particles 100 may be combined with the catalyst material 24 prior to the sintering process. For example, the low thermal conductivity particles 100 may be grown on, attached to, adhered to, or otherwise connected to particles of catalyst material, and the coated particles of catalyst material may be combined with hard particles to form the particulate mixture prior to the sintering process. The low thermal conductivity particles 100 may be attached to the particles of catalyst material by functionalizing exterior surfaces of at least one of the low thermal conductivity particles 100 and the catalyst particles. After attaching the low thermal conductivity particles 100 to the catalyst particles and admixing with hard particles, the resulting particulate mixture may be subjected to an HPHT process to form a polycrystalline material 12, as described above.
(43) In some embodiments, the low thermal conductivity particles 100 may be grown on, attached, adhered, or otherwise connected to both particles of hard material and particles of catalyst material, and the coated particles may be combined to form the particulate mixture.
(44) As previously mentioned, a particulate mixture that includes hard particles for forming the interbonded grains 18 of hard material, low thermal conductivity particles 100, and, optionally, a catalyst material 24 (for catalyzing the formation of inter-granular bonds 26 between the grains 18), may be subjected to an HTHP process to form a polycrystalline material 12. After the HTHP process, catalyst material 24 (e.g., cobalt) and low thermal conductivity particles 19 may be disposed in at least some of the interstitial spaces 22 between the interbonded grains 18 of hard material.
(45) Optionally, the catalyst material 24 may be removed from the polycrystalline material 12 after the HTHP process using processes known in the art. However, the removal of the catalyst material 24 may also result in the removal of at least a portion of the low thermal conductivity particles 19, which may be undesirable. For example, a leaching process may be used to remove the catalyst material 24 and/or the low thermal conductivity particles 19 from the interstitial spaces 22 between the grains 18 of hard material in at least a portion of the polycrystalline material 12. By way of example and not limitation, a portion of the polycrystalline material 12 may be leached using a leaching agent and process such as those described more fully in, for example, U.S. Pat. No. 5,127,923, previously incorporated herein by reference, and U.S. Pat. No. 4,224,380, titled Temperature Resistant Abrasive Compact and Method for Making Same, issued Sep. 23, 1980, the disclosure of which is incorporated herein in its entirety by this reference. Specifically, aqua regia (a mixture of concentrated nitric acid (HNO.sub.3) and concentrated hydrochloric acid (HCl)) may be used to at least substantially remove catalyst material 24 and/or low thermal conductivity nanoparticles from the interstitial spaces 22. It is also known to use boiling hydrochloric acid (HCl) and boiling hydrofluoric acid (HF) as leaching agents. One particularly suitable leaching agent is hydrochloric acid (HCl) at a temperature of above 110 C., which may be provided in contact with the polycrystalline material 12 for a period of about two (2) hours to about sixty (60) hours, depending upon the size of the body of polycrystalline material 12. After leaching the polycrystalline material 12, the interstitial spaces 22 between the interbonded grains 18 of hard material within the polycrystalline material 12 subjected to the leaching process may be at least substantially free of catalyst material 24 used to catalyze formation of inter-granular bonds 26 between the grains in the polycrystalline material 12. Only a portion of the polycrystalline material 12 may be subjected to the leaching process, or the entire body of the polycrystalline material 12 may be subjected to the leaching process.
(46) In additional embodiments of the present disclosure, low thermal conductivity particles 19, 100 may be introduced into the interstitial spaces 22 between interbonded grains 18 of hard, polycrystalline material 12 after the catalyst material 24 and any other material in the interstitial spaces 2.2 has been removed from the interstitial spaces 22 (e.g., by a leaching process). For example, after subjecting a polycrystalline material 12 to a leaching process, low thermal conductivity particles 19, 100 may be introduced into the interstitial spaces 22 between the grains 18 of hard material in the polycrystalline material 12. Low thermal conductivity particles 19, 100 may be suspended in a liquid (e.g., water and/or another solvent) to form a suspension and the leached polycrystalline material 12 may be soaked in the suspension to allow the liquid and the low thermal conductivity particles 19, 100 to infiltrate into the interstitial spaces 22. The liquid (and the low thermal conductivity particles 19, 100 suspended therein) may be drawn into the interstitial spaces 22 by capillary forces. In some embodiments, pressure may be applied to the liquid to facilitate infiltration of the liquid suspension into the interstitial spaces 22.
(47) After infiltrating the interstitial spaces 22 with the liquid suspension, the polycrystalline material 12 may be dried to remove the liquid from the interstitial spaces 22, leaving behind the low thermal conductivity particles 19, 100 therein. Optionally, a thermal treatment process may be used to facilitate the drying process. Alternatively, a liquid precursor may be chosen such that the liquid containing low thermal conductivity nanoparticles 103 will infiltrate the interstitial spaces 22 and solidify, holding the nanoparticles 103 in place after drying, curing, or other treatment.
(48) The polycrystalline material 12 then may be subjected to a thermal process (e.g., a standard vacuum furnace sintering process) to at least partially sinter the low thermal conductivity particles 19, 100 within the interstitial spaces 22 in the polycrystalline material 12. Such a process may be carried out below any temperature that might be detrimental to the polycrystalline material 12.
(49) Embodiments of cutting elements 10 of the present disclosure that include a polycrystalline compact comprising polycrystalline material 12 formed as previously described herein, such as the cutting element 10 illustrated in
(50) Polycrystalline hard materials that include low thermal conductivity nanoparticles in interstitial spaces between the interbonded grains of hard material, as described hereinabove, may exhibit improved thermal stability, improved mechanical durability, or both improved thermal stability and improved mechanical durability relative to previously known polycrystalline hard materials. By including the low thermal conductivity nanoparticles in the interstitial spaces between the interbonded grains of hard material, less catalyst material may be disposed in interstitial spaces between the grains in an ultimate polycrystalline hard material, and the thermal conductivity of the polycrystalline material may be reduced, which may improve one or both of the thermal stability and the mechanical durability of the ultimate polycrystalline hard material.
(51) Additional non-limiting example embodiments of the disclosure are described below.
(52) Embodiment 1: A polycrystalline compact comprising a plurality of grains of hard material having a first thermal conductivity at 23 C. and a plurality of nanoparticles having a second thermal conductivity at 23 C. disposed in interstitial spaces between the plurality of grains of hard material, The second thermal conductivity is less than about 0.2 times the first thermal conductivity.
(53) Embodiment 2: The polycrystalline compact of Embodiment 1, wherein the plurality of grains of hard material comprises a plurality of grains of diamond.
(54) Embodiment 3: The polycrystalline compact of Embodiment 1 or Embodiment 2, wherein the second thermal conductivity is less than about 50 Wm.sup.1K.sup.1.
(55) Embodiment 4: The polycrystalline compact of Embodiment 3, wherein the second thermal conductivity is about 0.2 Wm.sup.1K.sup.1.
(56) Embodiment 5: The polycrystalline compact of any of Embodiment 1 through Embodiment 4, further comprising a catalyst material in the interstitial spaces between the plurality of grains of hard material.
(57) Embodiment 6: The polycrystalline compact of any of Embodiment 1 through Embodiment 5, wherein the plurality of nanoparticles comprises alumina,
(58) Embodiment 7: The polycrystalline compact of any of Embodiment 1 through Embodiment 6, wherein each nanoparticle of the plurality of nanoparticles comprises a core comprising a first material and at least one coating on the core. The at least one coating comprises a second, different material.
(59) Embodiment 8: The polycrystalline compact of Embodiment 7, wherein the core comprises at least two particles.
(60) Embodiment 9: The polycrystalline compact of Embodiment 7 or Embodiment 8, wherein the core comprises tungsten carbide and the at least one coating on the core comprises alumina.
(61) Embodiment 10: The polycrystalline compact of any of Embodiment 7 through Embodiment 9, wherein the at least one coating on the core comprises a first coating comprising alumina, a second coating comprising zirconia, and a third coating comprising alumina.
(62) Embodiment 11: The polycrystalline compact of any of Embodiment 1 through Embodiment 10, wherein the plurality of nanoparticles occupies from about 0.01% to about 50% by volume of the polycrystalline compact.
(63) Embodiment 12: The polycrystalline compact of any of Embodiment 1 through Embodiment 11, further comprising a substrate bonded to the plurality of grains of hard material.
(64) Embodiment 13: An earth-boring tool comprising a polycrystalline compact. The polycrystalline compact has a plurality of grains of hard material having a first thermal conductivity at 23 C. and a plurality of nanoparticles having a second thermal conductivity at 23 C. disposed in interstitial spaces between the plurality of grains of hard material. The second thermal conductivity is less than about 0.2 times the first thermal conductivity.
(65) Embodiment 14: The earth-boring tool of Embodiment 13, wherein the earth-boring tool is a fixed-cutter rotary drill bit.
(66) Embodiment 15: A method of forming a polycrystalline compact, comprising combining a plurality of hard particles having a first thermal conductivity at 23 C. and a plurality of nanoparticles having a second thermal conductivity at 23 C. to form a mixture and sintering the mixture to form a polycrystalline hard material comprising a plurality of interbonded grains of hard material. The second thermal conductivity is less than about 0.2 times the first thermal conductivity.
(67) Embodiment 16: The method of Embodiment 15, wherein combining a plurality of hard particles and a plurality of nanoparticles to form a mixture comprises combining a plurality of diamond particles and a plurality of nanoparticles to form the mixture.
(68) Embodiment 17: The method of Embodiment 15 or Embodiment 16, wherein combining a plurality of hard particles having a first thermal conductivity at 23 C. and a plurality of nanoparticles having a second thermal conductivity at 23 C. to form a mixture comprises combining a plurality of hard particles with nanoparticles comprising a material having a thermal conductivity less than about 50 Wm.sup.1K.sup.1.
(69) Embodiment 18: The method of any of Embodiments 15 through 17, wherein combining a plurality of hard particles having a first thermal conductivity at 23 C. and a plurality of nanoparticles having a second thermal conductivity at 23 C. to form a mixture comprises combining a plurality of hard particles with nanoparticles comprising alumina.
(70) Embodiment 19: The method of any of Embodiments 15 through 18, further comprising adding a catalyst to the mixture, the catalyst selected to promote formation of inter-granular bonds between the grains of hard material.
(71) Embodiment 20: The method of any of Embodiments 15 through 19, wherein sintering the mixture comprises sintering the mixture in an HTHP process.
(72) Embodiment 21: The method of any of Embodiments 15 through 20, further comprising forming a nanoparticle of the plurality of nanoparticles comprising coating a core comprising a first material with a second material. The second material comprises the material having a lower thermal conductivity than the plurality of hard particles.
(73) Embodiment 22: A method of forming a cutting element, comprising infiltrating interstitial spaces between interbonded grains of hard material in a polycrystalline material with a plurality of nanoparticles. The plurality of nanoparticles have a thermal conductivity at 23 C. of less than about 20% of a thermal conductivity at 23 C. of the interbonded grains of hard material.
(74) Embodiment 23: The method of Embodiment 22, wherein infiltrating interstitial spaces between interbonded grains of hard material in a polycrystalline material with a plurality of nanoparticles comprises infiltrating interstitial spaces between interbonded diamond grains with a plurality of nanoparticles,
(75) Embodiment 24: The method of Embodiment 22 or Embodiment 23, wherein infiltrating interstitial spaces between interbonded grains of hard material in a polycrystalline material with a plurality of nanoparticles comprises infiltrating interstitial spaces between interbonded grains of hard material in a polycrystalline material with a material having a thermal conductivity of less than about 50 Wm.sup.1K.sup.1.
(76) Embodiment 25: The method of any of Embodiments 22 through 24, wherein infiltrating interstitial spaces between interbonded grains of hard material in a polycrystalline material with a plurality of nanoparticles comprises infiltrating interstitial spaces between interbonded grains of hard material in a polycrystalline material with nanoparticles comprising alumina.
(77) While the present disclosure has been described herein with respect to certain embodiments, those of ordinary skill in the art will recognize and appreciate that it is not so limited, Rather, many additions, deletions, and modifications to the embodiments described herein may be made without departing from the scope of the invention as hereinafter claimed, including legal equivalents. In addition, features from one embodiment may be combined with features of another embodiment while still being encompassed within the scope of the invention as contemplated by the inventor. Further, embodiments of the disclosure have utility with different and various bit profiles, as well as various cutting element types and configurations.