Apparatus for manufacturing single crystal

Abstract

The present invention provides an apparatus for manufacturing a single crystal according to a Czochralski method, including: a crucible configured to contain a raw material melt; a cylindrical heater surrounding the crucible, the heater being configured to heat the raw material melt; a main chamber that accommodates the crucible and the heater; an electrode that is inserted from the bottom of the main chamber and supports the cylindrical heater, the electrode being configured to supply electric power to the heater; and a melt-leakage receiving tray disposed on the bottom of the main chamber, the tray being configured to receive the raw material melt leaking from the crucible, wherein a melt-leakage cover is disposed below the crucible and above the electrode, the cover being configured to prevent contact between the raw material melt leaking from the crucible and the electrode.

Claims

1. An apparatus for manufacturing a single crystal according to a Czochralski method, comprising: a crucible configured to contain a raw material melt; a cylindrical heater surrounding the crucible, the heater being configured to heat the raw material melt; a main chamber that accommodates the crucible and the heater; an electrode that is inserted from the bottom of the main chamber and supports the cylindrical heater, the electrode being configured to supply electric power to the heater; and a melt-leakage receiving tray disposed on the bottom of the main chamber, the tray being configured to receive the raw material melt leaking from the crucible, wherein one melt-leakage cover is disposed below the crucible and above the electrode, the cover being configured to prevent contact between the raw material melt leaking from the crucible and the electrode and having a ring shape that extends such that the cover is disposed along the entire circumference of the crucible, a heat-insulating plate through which the electrode extends is disposed between the melt-leakage receiving tray and the melt-leakage cover, the melt-leakage cover has a structure that guides the raw material melt leaking from the crucible toward the heat-insulating plate, and the heat-insulating late has a structure that guides the raw material melt toward the melt-leakage detector provided in the melt-leakage receiving tray.

2. The apparatus for manufacturing a single crystal according to claim 1, wherein the melt-leakage receiving tray is provided with a melt-leakage detector for detecting the leakage of melt, and the melt-leakage cover has a structure that guides the raw material melt leaking from the crucible toward the melt-leakage detector.

3. The apparatus for manufacturing a single crystal according to claim 2, wherein the structure of the melt-leakage cover that guides the raw material melt has a rib disposed at a periphery of an upper surface of the cover and a notch formed in part of the rib.

4. The apparatus for manufacturing a single crystal according to claim 1, wherein the structure of the melt-leakage cover that guides the raw material melt has a rib disposed at a periphery of an upper surface of the cover and a notch formed in part of the rib.

Description

BRIEF DESCRIPTION OF DRAWINGS

(1) FIG. 1 is a schematic diagram of an exemplary apparatus for manufacturing a single crystal according to the present invention;

(2) FIG. 2 is a schematic diagram of an exemplary melt-leakage cover;

(3) FIG. 3 is a graph showing the result of electric power consumption in example and comparative example; and

(4) FIG. 4 is a schematic diagram of an example of a conventional apparatus for manufacturing a single crystal.

DESCRIPTION OF EMBODIMENTS

(5) An embodiment of the inventive apparatus for manufacturing a single crystal will now be described in detail by way of example with reference to the drawings, but the present invention is not limited to this embodiment.

(6) FIG. 1 schematically shows an exemplary apparatus for manufacturing a single crystal according to the present invention. The apparatus manufactures a single crystal, such as a silicon single crystal, according to the CZ method.

(7) As shown in FIG. 1, the apparatus 1 for manufacturing a single crystal includes a main chamber (a pulling chamber) 2, a crucible 3 accommodated in the main chamber 2, a cylindrical heater 4 (simply referred to as a heater, hereinafter) disposed so as to surround the crucible 3, a crucible holding shaft 5 and its rotation mechanism (not shown) for rotating the crucible 3, a seed chuck 7 for holding a silicon seed crystal 6, a wire 8 for pulling the seed chuck 7, a winding mechanism (not shown) for rotating or winding the wire 8. The wire 8 is reeled up to pull the seed crystal 6 that has been brought into contact with or dipped into a raw material melt 9 (a molten material), such as a silicon melt here, contained in the crucible 3, so that a silicon crystal 12 can be grown.

(8) The crucible 3 is composed of a quartz crucible disposed on the inside on which the raw material melt 9 is received and a graphite crucible disposed on the outside. A heat-insulating material 10 is also disposed around the outside of the heater 4.

(9) Moreover, a melt-leakage receiving tray 13 having a sufficient internal volume to contain the entire raw material melt is disposed at the bottom of the main chamber 2.

(10) Moreover, a water-cooled electrode 14 made of metal is inserted from the bottom of the main chamber 2. The electrode 14 is coupled with the heater 4 at its upper end though a clump and the like to serve as a support for the heater 4 and a supplier of electric power.

(11) The electrode 14 and a crucible holding shaft 5 are surrounded and covered by a sleeve 15. The reason is that when the raw material melt leaking from the crucible reaches the melt-leakage receiving tray 13, the electrode 14 and the crucible holding shaft 5 will be protected from the leaking raw material melt.

(12) The inventive apparatus 1 for manufacturing a single crystal is also provided with a melt-leakage cover 16 below the crucible 3 and above the electrode 14. A heat-insulating plate 11 may further be disposed between the melt-leakage cover 16 and the melt-leakage receiving tray 13.

(13) The melt-leakage cover 16 will now be described in detail.

(14) Since the melt-leakage cover 16 is disposed between the crucible 3 and the electrode 14, even when the raw material melt 9 in the crucible 3 leaks and drops toward the electrode 14, the melt will contact only the melt-leakage cover 16, which is disposed at a position higher than that of the electrode 14; it is possible to prevent the contact of the raw material melt with the electrode 14, which is disposed below the melt-leakage cover 16, and the coupling part between the electrode 14 and the heater 4. In this way, the electrode 14 made of metal, the coupling part, and so on can be protected from the raw material melt and prevented from damaging. Unlike a conventional apparatus, the inventive apparatus can thereby eliminate the need for breaking part of the heater 4 and the coupling part to which a raw material melt has stuck, when the heater 4 is taken out.

(15) Since the melt-leakage cover 16 is provided, it is possible to inhibit an escape of heat radiating from the heater 4 into a lower location in the main chamber 2. The raw material melt in the crucible 3 can thereby be efficiently heated, and electric power needed upon manufacture can be reduced. The cost and environmental load can thereby be reduced.

(16) The position at which the melt-leakage cover 16 is disposed need only be below the crucible 3 and above the electrode 14; the specific position is not particularly limited. The position may be, for example, 10 mm or more away from the crucible 3 downward and above the electrode 14, such as 10 mm or more away from the coupling part between the electrode 14 and the heater 4 upward. At such a position, the melt-leakage cover 16 does not interfere with the crucible 3, the electrode 14, and the coupling part and so on during operation; thereby the occurrence of spark due to a short can be prevented.

(17) Other than that, the size, the shape, and the like of the melt-leakage cover 16 are not particularly limited, provided it has a sufficient size and shape to protect the electrode 14 from the leaking raw material melt. For example, the size may be the minimum size needed to cover only an upper part of the electrode 14; as shown in FIG. 2, the shape may be a ring shape that extends such that it is disposed along the entire circumference of the crucible 3.

(18) In an example shown in FIG. 2, because of the ring shape, the crucible holding shaft 5 can extend through a center hole, and even when the raw material melt 9 leaks from any location of the crucible 3 located above, directly falling of the melt on a lower location in the main chamber 2 can be prevented. In addition, with respect to the cylindrical heater 4, an escape of the radiant heat into a lower location can be inhibited at any circumferential position, and the raw material melt 9 can thereby be more efficiently heated. The melt can even be heated with uniform thermal distribution in circumferential direction of the crucible 3.

(19) The melt-leakage cover 16 is integrated with an heat-insulating plate 11 disposed below the cover. The electrode 14, for example, extends through the heat-insulating plate 11. In this embodiment, a member 17 having a proper thickness for use in height position adjustment is prepared separately. The member 17 for use in height position adjustment is placed on the heat-insulating plate 11 and the melt-leakage cover 16 is placed thereon. These components are fixed by engaging their fitting parts appropriately formed therein to prevent their positional differences.

(20) As shown in FIG. 2, the heat-insulating plate 11 has an electrode-through hole 22 and is configured such that the electrode 14 can extend therethrough.

(21) The melt-leakage cover 16 may be made of a graphite material; the member 17 for use in height position adjustment may be made of a heat-insulating material or a graphite material.

(22) Without through the member 17 for use in height position adjustment, the melt-leakage cover 16 and the heat-insulating plate 11 can be directly integrated by proper adjustment of the thickness or the location of the melt-leakage cover 16 and the heat-insulating plate 11.

(23) The melt-leakage cover 16 and the heat-insulating plate 11 can also be disposed independently.

(24) Whether they are disposed integrally or independently may be appropriately decided according to the size of the main chamber 2, positional relationships among the other components, or the like.

(25) The difference between the heat-insulating plate 11 and the melt-leakage cover 16 depends on whether they cover the upper part of the electrode 14 or not.

(26) Moreover, a rib 18 is disposed along the circumference of the upper surface of the melt-leakage cover 16. The disposed rib 18 enables the raw material melt falling on the melt-leakage cover 16 to be temporally held.

(27) A notch 19 is formed in part of the rib 18. The notch 19 allows the raw material melt held in an area surrounded by the rib 18 to flow downward therethrough. Together with adjustment of a location at which the notch 19 is formed, provision of the melt-leakage cover 16 such that the notch 19 is located right above a desired location into which the raw material melt flows enables the raw material melt to be guided to the desired location through the notch 19.

(28) The guiding structure 20 for the leaking raw material melt in the melt-leakage cover 16 is not limited to the example in FIG. 2, but appropriately determined. Another practical example is a structure in which the raw material melt can flow downward through a through hole and the like formed in the melt-leakage cover 16.

(29) The structure need only be capable of guiding the raw material melt to a desired location while preventing contact of the raw material melt with the electrode 14, the coupling part, and so on.

(30) The guiding structure may be configured so as to guide the raw material melt to a melt-leakage detector 21 provided in the melt-leakage receiving tray 13. The melt-leakage receiving tray 13 may be configured such that it merely receives the raw material melt leaking from the crucible 3. In an example shown in FIG. 1, however, the melt-leakage detector 21 is provided to automatically detect the leakage of melt. Such an apparatus can detect the occurrence of the leakage of melt itself and immediately take an effective action, such as power down. The melt-leakage detector 21 can continuously detect the temperature of the melt-leakage receiving tray 13 and decide whether the leakage of melt has occurred, according to variation in detected values.

(31) If the above guiding structure 20 of the melt-leakage cover 16 is configured to guide a raw material melt so as to directly flow near the melt-leakage detector 21, then a raw material melt that would flow into the coupling part between the heater 4 and the electrode 14, and so on in a conventional apparatus can also be guided to the melt-leakage detector 21. The leakage of melt can therefore be detected, or sometimes in a shorter time than previously. In the past, even through the melt-leakage detector is provided, it was not possible to detect the leakage of melt in the case where the leaking melt flows into the coupling part, and so on.

(32) The guiding structure 20 of the melt-leakage cover 16 may also be configured such that the raw material melt is guided so as to flow first toward the heat-insulating plate 11 and then near the melt-leakage detector 21 through the heat-insulating plate 11. In this configuration, the heat-insulating plate 11 is preferably provided with a similar guiding structure to that of the melt-leakage cover 16.

(33) The this type of melt-leakage cover 16 and heat-insulating plate 11 allows the raw material melt 9 leaking from the crucible 3 to be finally guided to the melt-leakage detector 21 with the guiding structure 20 of the melt-leakage cover 16 and the heat-insulating plate 11. The ability to detect the leakage of melt thereby becomes excellent.

EXAMPLE

(34) The present invention will now be more specifically described with reference to example and comparative example, but the present invention is not limited to this example.

Example

(35) A silicon single crystal was manufactured with the inventive apparatus 1 for manufacturing a single crystal, provided with a graphite melt-leakage cover as shown in FIG. 1.

(36) Polycrystalline silicon of 140 kg was charged into a quartz crucible with a diameter of 61 cm, and melted. A horizontal magnetic field with a central intensity of 0.4T was applied. Through a process for maturing the silicon melt, a seed crystal having a (001) plane was dipped into the silicon melt.

(37) At this time, the flow rate of Ar was adjusted to 120 L/min. The pressure in the apparatus for manufacturing a single crystal was adjusted to 75 Torr (9999 Pa) by resistance provided in an exhaust pipe. After a necking process, the diameter of the single crystal was increased to a desired diameter of 200 mm. A boron-doped, 200 mm-diameter silicon single crystal was then grown in which the specific resistance of a constant diameter portion, which became a product, was adjusted to 10 .Math.cm.

(38) The average electric power consumed in the growth of this silicon single crystal was investigated. The result is shown in FIG. 3. As shown in FIG. 3, the result was 95 kW. The average electric power consumption was lower than that in the later-described comparative example. This is considered to be because in this example, the melt-leakage cover was disposed above the electrode to prevent radiant heat from the heater from escaping into below the melt-leakage cover, particularly into a lower location of the main chamber through the electrode-through hole of the heat-insulating plate; thereby the silicon melt was efficiently heated, unlike the comparative example using a conventional apparatus for manufacturing a single crystal.

Comparative Example

(39) A silicon single crystal was manufactured with the conventional apparatus 101 for manufacturing a single crystal, as shown in FIG. 4, in which no melt-leakage cover was provided.

(40) The other operational conditions were the same as in the above example.

(41) As shown in FIG. 3, the average electric power consumed in the growth of this silicon single crystal was 100 kW. The average electric power consumption was higher than that in the above example of the present invention.

(42) It is to be noted that the leakage of melt occurred during operation. The apparatus 101 for manufacturing a single crystal in comparative example allowed the raw material melt to contact the electrode and so on, whereas the apparatus 1 for manufacturing a single crystal in the above example protected the electrode from the raw material melt with the melt-leakage cover.

(43) It is to be noted that the present invention is not limited to the foregoing embodiment. The embodiment is just an exemplification, and any examples that have substantially the same feature and demonstrate the same functions and effects as those in the technical concept described in claims of the present invention are included in the technical scope of the present invention.