CAPACITOR OF SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD FOR MANUFACTURING THE SAME

Abstract

Provided are a capacitor of a semiconductor integrated circuit and a method for manufacturing the same, for example a metal-insulator-metal (MIM) type capacitor of a semiconductor integrated circuit, which is capable of improving adhesive force between an electrode layer and a dielectric layer of a capacitor, and a method for manufacturing the same. For example, the present disclosure provides a capacitor for a semiconductor integrated circuit having a new structure, which is capable of preventing a delamination phenomenon on an interface between a lower electrode layer and a dielectric layer by further forming a buffer layer, which is capable of decreasing or compensating for a difference in a coefficient of thermal expansion, between a metal electrode layer and a dielectric layer, particularly, between the lower electrode layer and the dielectric layer, and a method for manufacturing the same.

Claims

1. A semiconductor integrated circuit, comprising: a substrate comprising a substrate coefficient of thermal expansion (CTE); and a capacitor on the substrate and comprising: a lower seed layer on a topmost substrate surface of the substrate and comprising a lower seed CTE; a lower electrode layer on the lower seed layer and comprising a lower electrode CTE; a buffer layer on the lower electrode layer and comprising a buffer CTE; a dielectric layer on the buffer layer and comprising a dielectric CTE; an upper seed layer on the dielectric layer and comprising an upper seed CTE; and an upper electrode layer on the upper seed layer and comprising an upper electrode CTE; wherein: the lower electrode CTE is greater than the buffer CTE; the buffer CTE is greater than the dielectric CTE; the lower electrode CTE is greater than the lower seed CTE; the lower seed CTE is greater than the substrate CTE; the upper electrode CTE is greater than the upper seed CTE; the upper seed CTE is greater than the dielectric CTE; and a difference between the lower electrode CTE and the buffer CTE is greater than a difference between the buffer CTE and the dielectric CTE.

2. The semiconductor integrated circuit of claim 1, wherein: the substrate comprises one or both of a semiconductor material and/or a glass material; each layer of the capacitor is formed on the substrate; materials of the lower seed layer, of the buffer layer, and of the upper seed layer are the same as each other; the lower seed layer comprises a plated layer onto the topmost substrate surface; the lower electrode layer comprises a plated layer plated onto the lower seed layer; the buffer layer comprises a sputtered layer sputtered onto the lower electrode layer; the dielectric layer comprises a chemical vapor deposition layer deposited onto the buffer layer; the upper seed layer comprises a plated layer plated onto the dielectric layer; and the upper electrode layer comprises a plated layer plated onto the upper seed layer.

3. A semiconductor integrated circuit, comprising: a substrate; and a capacitor on the substrate and comprising: a lower electrode layer coupled to the substrate and comprising a lower electrode coefficient of thermal expansion (CTE); a buffer layer on the lower electrode layer and comprising a buffer CTE; a dielectric layer on the buffer layer and comprising a dielectric CTE; and an upper electrode layer on the dielectric layer; wherein: the lower electrode CTE is greater than the buffer CTE; and the buffer CTE is greater than the dielectric CTE.

4. The semiconductor integrated circuit of claim 3, wherein: the buffer layer comprises one or more of: titanium-tungsten (TiW), titanium (Ti), chrome (Cr), and/or tungsten (W).

5. The semiconductor integrated circuit of claim 3, wherein: the dielectric layer comprises one or more of: silicon nitride (SiN), aluminum oxide (Al2O3), and/or hafnium oxide (HfO3).

6. The semiconductor integrated circuit of claim 3, wherein: each layer of the capacitor is formed on the substrate.

7. The semiconductor integrated circuit of claim 3, wherein: the substrate comprises one or both of a semiconductor material and/or a glass material.

8. The semiconductor integrated circuit of claim 3, wherein: a difference between the lower electrode CTE and the buffer CTE is greater than a difference between the buffer CTE and the dielectric CTE.

9. The semiconductor integrated circuit of claim 3, comprising: a lower seed layer between the substrate and the lower electrode layer and comprising a lower seed CTE; wherein: the lower electrode CTE is greater than the lower seed CTE; and the lower seed CTE is greater than a CTE of the substrate.

10. The semiconductor integrated circuit of claim 9, wherein: materials of the lower seed layer and of the buffer layer are the same as each other.

11. The semiconductor integrated circuit of claim 9, comprising: an upper seed layer between the dielectric layer and the upper electrode layer and comprising an upper seed CTE; wherein: the upper electrode CTE is greater than the upper seed CTE; and the upper seed CTE is greater than the dielectric CTE.

12. The semiconductor integrated circuit of claim 11, wherein: materials of the lower seed layer, of the buffer layer, and of the upper seed layer are the same as each other.

13. The semiconductor integrated circuit of claim 3, wherein: the buffer layer comprises a sputtered layer sputtered onto the lower electrode layer.

14. A method of manufacturing a capacitor for a semiconductor integrated circuit, the method comprising: providing a substrate; and forming a capacitor on the substrate, said forming comprising: forming a lower electrode layer on the substrate; forming a buffer layer on the lower electrode layer; forming a dielectric layer on the buffer layer; and forming an upper electrode layer on the second seed layer; wherein: the lower electrode CTE of the lower electrode layer is greater than a buffer CTE of the buffer layer; and the buffer CTE is greater than a dielectric CTE of the dielectric layer.

15. The method of claim 14, wherein: the buffer layer is sputtered onto the lower electrode layer and comprises one or more of titanium-tungsten (TiW), titanium (Ti), chrome (Cr), and/or tungsten (W).

16. The method of claim 14, wherein: the dielectric layer is formed by chemical vapor deposition onto the buffer layer and comprises one or more of silicon nitride (SiN), aluminum oxide (Al2O3), and/or hafnium oxide (HfO3).

17. The method of claim 14, wherein: forming the capacitor comprises plating a lower seed layer on the substrate; and forming the lower electrode layer comprises plating the lower electrode layer on the lower seed layer.

18. The method of claim 17, wherein: forming the capacitor comprises plating an upper seed layer on the dielectric layer; and forming the upper electrode layer comprises plating the upper electrode layer on the upper seed layer.

19. The method of claim 18, wherein: a material of the buffer layer is same as at least one of: a material the upper seed layer; or a material of the lower seed layer.

20. The method of claim 1, wherein: forming the lower electrode layer comprises: forming the lower electrode layer above a topmost surface of the substrate.

Description

BRIEF DESCRIPTION OF SEVERAL VIEWS OF THE DRAWINGS

[0032] FIG. 1 is a cross-sectional view illustrating a structure of a capacitor of a semiconductor integrated circuit in the related art.

[0033] FIG. 2 is a cross-sectional view illustrating a structure of a capacitor of a semiconductor integrated circuit according to the present disclosure.

[0034] FIG. 3 is actual images of the comparison of the capacitor in the related art and the capacitor of the present disclosure by an electron microscope.

DETAILED DESCRIPTION

[0035] Hereinafter, an exemplary embodiment of the present disclosure will be described in detail with reference to the accompanying drawings.

[0036] FIG. 2 is a cross-sectional view illustrating a structure of a capacitor of a semiconductor integrated circuit according to the present disclosure.

[0037] As illustrated in FIG. 2, a capacitor 20 according to the present disclosure has a metal-insulator-metal (MIM) type structure including a lower electrode layer 12, which is formed on a wafer 10 (for example, silicon or glass) and is made of a metal (for example, copper), a dielectric layer 14 (for example, silicon nitride (SiN)) formed on the lower electrode layer 12, and an upper electrode layer 16, which is formed on the dielectric layer 14 and is made of a metal (for example, copper), and a buffer layer 18, which is capable of decreasing a difference in a coefficient of thermal expansion between the respective metal electrodes 12 and 16 and the dielectric layer 14, particularly, the lower electrode layer 16 and the dielectric layer 14, is further formed.

[0038] The capacitor of the present disclosure is manufactured by a process below.

[0039] First, a first seed layer (titanium-tungsten (TiW) layer) for plating the lower electrode layer is coated on the wafer 10 by using a sputtering method.

[0040] Subsequently, the lower electrode layer 12 made of a metal (for example, copper) is formed on the first seed layer 11 by using a typical plating process.

[0041] Subsequently, the buffer layer 18, which is capable of decreasing a difference in a coefficient of thermal expansion between the lower electrode layer 12 and the dielectric layer 14, is coated on a surface of the lower electrode layer 12 by using a sputtering method.

[0042] The buffer layer 18 may be made of TiW, which is the same as the material of the first and second seed layers (TiW) used during the process of manufacturing the capacitor, as a material, which is capable of decreasing a difference in a coefficient of thermal expansion between the lower electrode layer 12 and the dielectric layer 14, but the material of the buffer layer 18 is not limited to TiW, and a material, such as Ti, Cr, and W, may be used considering a coefficient of thermal expansion and an electric characteristic.

[0043] Accordingly, any one selected from TiW, Ti, Cr, and W is adopted as the buffer layer 18 and is coated on the lower electrode layer 12 by the sputtering method.

[0044] Next, a silicon nitride (SiN) is coated on the lower electrode layer 12 as the dielectric layer 14 by using a plasma-enhanced chemical vapor deposition (PECVD) method.

[0045] Otherwise, an aluminum oxide (Al.sub.2O.sub.3) or a hafnium oxide (HfO.sub.3) is coated on the lower electrode layer 12 as the dielectric layer 14 by using a PECVD method in order to improve a capacitance density.

[0046] Subsequently, a second seed layer 15 (titanium-tungsten (TiW) layer) for plating the upper electrode layer is coated on the dielectric layer 14 by using a sputtering method.

[0047] Subsequently, the upper electrode layer 16 made of a metal (for example, copper) is formed on the second seed layer 15 by using a typical plating process.

[0048] By sequentially performing the aforementioned processes, the MIM type capacitor in the related art, in which the lower electrode layer 12, the dielectric layer 14, and the upper electrode layer 16 are sequentially laminated, is completed, and the buffer layer 18 is present between the lower electrode layer 12 and the dielectric layer 14, and the second seed layer 15 made of the same material as that of the buffer layer is present between the dielectric layer 14 and the upper electrode layer 16, so that it is possible to decrease a difference in a coefficient of thermal expansion between the respective electrode layers 12 and 16 and the dielectric layer 14, particularly, the lower electrode layer 12 and the dielectric layer 14, thereby easily preventing a delamination phenomenon on an interface of the lower electrode layer 12 and the dielectric layer 14.

[0049] A coefficient of thermal expansion of the lower and upper electrode layers 12 and 16 is 16 to 18 ppm/ C., a coefficient of thermal expansion of the dielectric layer (for example, SiN) is 2.1 to 3.1 ppm/ C., a coefficient of thermal expansion of the first and second seed layers (for example, TiW) is 4.5 to 4.6 ppm/ C., and a coefficient of thermal expansion of the buffer layer (for example, TiW) is also 4.5 to 4.6 ppm/ C.

[0050] Accordingly, in the related art, the lower electrode layer 12 is directly in contact with the dielectric layer 14, so that there is a problem in that a delamination phenomenon occurs on the interface between the lower electrode layer 12 and the dielectric layer 14 due to the excessively large difference in a coefficient of thermal expansion between the lower electrode layer 12 and the dielectric layer 14. However, in the present disclosure, the buffer layer 18 present between the lower electrode layer 12 and the dielectric layer 14 serves to decrease a difference in a coefficient of thermal expansion between the lower electrode layer 12 and the dielectric layer 14, thereby easily preventing a delamination phenomenon on an interface between the lower electrode layer 12 and the dielectric layer 14.

[0051] As a test example of the present disclosure, cross-sections of the capacitor of the present disclosure including the buffer layer as described above and the capacitor in the related art were observed by using an electron microscope, and the result is illustrated in FIG. 3.

[0052] As can be seen in FIG. 3, it is observed that a delamination phenomenon occurs on the interface between the lower electrode layer 12 and the dielectric layer 14 in the capacitor in the related art, but in the present disclosure, the interface between the lower electrode layer 12 and the dielectric layer 14 is firmly bonded without delamination by the buffer layer 18 present between the lower electrode layer 12 and the dielectric layer 14.