MIRROR DRIVING DEVICE AND DRIVING METHOD THEREOF
20170199375 ยท 2017-07-13
Assignee
Inventors
Cpc classification
H10N30/2043
ELECTRICITY
H10N30/802
ELECTRICITY
H10N30/208
ELECTRICITY
H10N30/101
ELECTRICITY
G02B26/0858
PHYSICS
International classification
Abstract
A piezoelectric actuator part which generates a driving force to rotate a mirror part about a rotation axis includes a first actuator part and a second actuator part having a both-end supported beam structure in which base end parts on both sides in an axial direction of the rotation axis are fixed. Upper electrodes and lower electrodes of the first actuator part and the second actuator part are divided to correspond to a stress distribution of principal stresses in a piezoelectric body during resonance mode vibration, a piezoelectric portion corresponding to positions of a first piezoelectric conversion part and third piezoelectric conversion parts and a piezoelectric portion corresponding to positions of second piezoelectric conversion parts and a fourth piezoelectric conversion part generate stresses in opposite directions.
Claims
1. A mirror driving device comprising: a mirror part having a reflecting surface; a mirror support part which is connected to the mirror part and supports the mirror part so as to be rotatable about a rotation axis; a piezoelectric actuator part which is connected to the mirror support part and generates a driving force to rotate the mirror part about the rotation axis; and a fixing part which supports the piezoelectric actuator part, wherein the piezoelectric actuator part has a laminated structure in which a vibration plate, a lower electrode, a piezoelectric body, and an upper electrode are laminated in this order, and includes a first actuator part and a second actuator part which are piezoelectric unimorph actuators that are deformed by an inverse piezoelectric effect of the piezoelectric body caused by application of a drive voltage, the first actuator part is disposed on one side of both sides of a direction which is orthogonal to a film thickness direction of the piezoelectric body and is an orthogonal direction of the rotation axis in the orthogonal direction which is orthogonal to an axial direction of the rotation axis, with the rotation axis interposed between the both sides in the orthogonal direction of the rotation axis, and the second actuator part is disposed on the other side of the both sides, each of the first actuator part and the second actuator part is connected to the mirror support part, with a configuration in which a first base end part, which is positioned on a side in the axial direction in the first actuator part opposite to a first connection point that is a connection portion between the first actuator part and the mirror support part, and a second base end part, which is positioned on a side in the axial direction in the second actuator part opposite to a second connection point that is a connection portion between the second actuator part and the mirror support part, are fixed to the fixing part, each of the first actuator part and the second actuator part is supported by the fixing part in a both-end supported beam structure, the first actuator part has the first base end part at each of end parts on both sides in the axial direction, a movable part that extends from the first base end part at one of the end parts on both sides of the first actuator part to the first base end part at the other thereof has a shape bypassing the mirror part, the second actuator part has the second base end part at each of the end parts on both sides in the axial direction, a movable part that extends from the second base end part at one of the end parts on both sides of the second actuator part to the second base end part at the other thereof has a shape bypassing the mirror part, the first base end part and the second base end part are separated from each other, the mirror support part is driven to be tilted by causing the first actuator part and the second actuator part to bend in opposite directions, the first actuator part has a first upper electrode part and a second upper electrode part as the upper electrode, and has a first lower electrode part and a second lower electrode part as the lower electrode, which respectively oppose the first upper electrode part and the second upper electrode part with the piezoelectric body interposed therebetween, and each of a first piezoelectric conversion part having the first upper electrode part and the first lower electrode part as an electrode pair and a second piezoelectric conversion part having the second upper electrode part and the second lower electrode part as an electrode pair is constituted by a single or a plurality of electrode pairs, the second actuator part has a third upper electrode part and a fourth upper electrode part as the upper electrode, and has a third lower electrode part and a fourth lower electrode part as the lower electrode, which respectively oppose the third upper electrode part and the fourth upper electrode part with the piezoelectric body interposed therebetween, and each of a third piezoelectric conversion part having the third upper electrode part and the third lower electrode part as an electrode pair and a fourth piezoelectric conversion part having the fourth upper electrode part and the fourth lower electrode part as an electrode pair is constituted by a single or a plurality of electrode pairs, an arrangement of the first piezoelectric conversion part, the second piezoelectric conversion part, the third piezoelectric conversion part, and the fourth piezoelectric conversion part corresponds to a stress distribution of principal stresses in an in-plane direction orthogonal to the film thickness direction of the piezoelectric body during resonance mode vibration accompanied with tilt displacement of the mirror part due to rotation about the rotation axis, and a piezoelectric portion corresponding to positions of the first piezoelectric conversion part and the third piezoelectric conversion part and a piezoelectric portion corresponding to positions of the second piezoelectric conversion part and the fourth piezoelectric conversion part are configured to generate stresses in opposite directions during the resonance mode vibration.
2. The mirror driving device according to claim 1, wherein the first connection point and the first base end part are in a positional relationship so as to be distant from the center of the mirror part in this order in the axial direction of the rotation axis, and the second connection point and the second base end part are in a positional relationship so as to be distant from the center of the mirror part in this order in the axial direction of the rotation axis.
3. The mirror driving device according to claim 1, further comprising: a first connection part which is a member that connects the first actuator part to the mirror support part; and a second connection part which is a member that connects the second actuator part to the mirror support part.
4. The mirror driving device according to claim 1, wherein the first actuator part and the second actuator part are connected to each other, and the mirror support part is connected to a connection portion between the first actuator part and the second actuator part.
5. The mirror driving device according to claim 1, wherein each of the first upper electrode part, the second upper electrode part, the third upper electrode part, the fourth upper electrode part, the first lower electrode part, the second lower electrode part, the third lower electrode part and the fourth lower electrode part is used as an electrode for driving that applies a voltage for driving, at least one electrode of the first upper electrode part, the second upper electrode part, the third upper electrode part, the fourth upper electrode part, the first lower electrode part, the second lower electrode part, the third lower electrode part and the fourth lower electrode part is divided into a plurality of electrodes, and some of the plurality of electrodes are used as electrodes for detection that detect a voltage generated by a piezoelectric effect due to a deformation of the piezoelectric body.
6. The mirror driving device according to claim 1, wherein a drive voltage for piezoelectric driving is applied to at least one electrode part of the first lower electrode part, the second lower electrode part, the third lower electrode part, or the fourth lower electrode part.
7. The mirror driving device according to claim 1, wherein a first mirror support part and a second mirror support part, which support the mirror part from both sides in the axial direction of the rotation axis, are provided as the mirror support part.
8. The mirror driving device according to claim 1, wherein the mirror part, the mirror support part, the first actuator part, and the second actuator part have a line symmetrical form with respect to the rotation axis as an axis of symmetry, in a plan view in a non-driven state.
9. The mirror driving device according to claim 1, wherein the mirror part, the mirror support part, the first actuator part, and the second actuator part have a line symmetrical form with respect to a center line which passes through the center of the mirror part and is orthogonal to the rotation axis as an axis of symmetry, in the plan view in the non-driven state.
10. The mirror driving device according to claim 1, further comprising a driving circuit which applies a voltage for driving to electrodes constituting at least one of the upper electrode parts of the first piezoelectric conversion part and the third piezoelectric conversion part, and applies a voltage for driving to electrodes constituting at least one of the lower electrode parts of the second piezoelectric conversion part and the fourth piezoelectric conversion part, wherein the drive voltage applied to the electrodes constituting at least one of the upper electrode parts of the first piezoelectric conversion part and the third piezoelectric conversion part, and the drive voltage applied to the electrodes constituting at least one of the lower electrode parts of the second piezoelectric conversion part and the fourth piezoelectric conversion part are in phase.
11. The mirror driving device according to claim 1, wherein some of the electrodes of the upper electrode part and the lower electrode part of each of the first piezoelectric conversion part, the second piezoelectric conversion part, the third piezoelectric conversion part, and the fourth piezoelectric conversion part are set to be at a floating potential, and a detection circuit which detects a voltage generated by a piezoelectric effect accompanied with deformation of the piezoelectric body from the electrode at the floating potential is provided.
12. The mirror driving device according to claim 1, further comprising a driving circuit which supplies a drive voltage to the piezoelectric actuator part, wherein the driving circuit supplies a voltage waveform of the drive voltage for causing the mirror part to undergo resonance driving.
13. The mirror driving device according to claim 1, wherein the piezoelectric body used in the piezoelectric actuator part is a thin film having a thickness of 1 to 10 m and is a thin film directly formed on a substrate which serves as a vibration plate.
14. The mirror driving device according to claim 1, wherein the piezoelectric body used in the piezoelectric actuator part is one or two or more perovskite type oxides represented by the following general formula (P-1),
General formula ABO.sub.3(P-1) in the formula, A is an element in A-site and is at least one element including Pb, B is an element in B-site and is at least one element selected from the group consisting of Ti, Zr, V, Nb, Ta, Sb, Cr, Mo, W, Mn, Sc, Co, Cu, In, Sn, Ga, Zn, Cd, Fe, Mg, Si, and Ni, O is an oxygen element, and the molar ratio among the A-site element, the B-site element, and the oxygen element is 1:1:3 as a standard, and the molar ratio may be deviated from the reference molar ratio within a range in which a perovskite structure is able to be achieved.
15. The mirror driving device according to claim 1, wherein the piezoelectric body used in the piezoelectric actuator part is one or two or more perovskite type oxides represented by the following general formula (P-2),
General formula A.sub.a(Zr.sub.x,Ti.sub.y,M.sub.b-x-y).sub.bO.sub.c(P-2) in the formula, A is an element in A-site and is at least one element including Pb, M is at least one element selected from the group consisting of V, Nb, Ta, and Sb, 0<x<b, 0<y<b, and 0b-x-y are satisfied, and a:b:c=1:1:3 is standard, and the molar ratio may be deviated from the reference molar ratio within a range in which the perovskite structure is able to be achieved.
16. The mirror driving device according to claim 15, wherein the perovskite type oxide (P-2) includes Nb, and the molar ratio Nb/(Zr+Ti+Nb) is 0.06 or more and 0.20 or less.
17. A mirror driving method in the mirror driving device according to claim 1, comprising: applying a first drive voltage to an electrode constituting at least one piezoelectric conversion part of the first piezoelectric conversion part or the third piezoelectric conversion part; and applying a second drive voltage, which is in phase with the first drive voltage, to an electrode constituting at least one piezoelectric conversion part of the second piezoelectric conversion part or the fourth piezoelectric conversion part, thereby causing the first actuator part and the second actuator part to bend in opposite directions.
18. The mirror driving method according to claim 17, wherein some of the electrodes of the upper electrode parts and the lower electrode parts of each of the first piezoelectric conversion part, the second piezoelectric conversion part, the third piezoelectric conversion part, and the fourth piezoelectric conversion part are used as a detection electrode which detects a voltage generated by a piezoelectric effect accompanied with deformation of the piezoelectric body, and a detection signal is obtained from the detection electrodes during driving of the mirror part.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0068] Hereinafter, embodiments for embodying the present invention will be described in detail with reference to the accompanying drawings.
First Embodiment
[0069]
[0070] The upper surface of the mirror part 12 is a reflecting surface 12C that reflects light. A metal thin film such as Au (gold) or Al (aluminum) is formed on the reflecting surface 12C in order to increase the reflectance of incident rays. Materials and film thicknesses used for mirror coating are not particularly limited, and various designs are possible using well-known mirror materials (high reflectance materials).
[0071] The shape in the plan view of the mirror part 12 that functions as the reflecting part and the shape of the reflecting surface 12C which is a mirror coated region may be coincident with each other or may be different from each other. The reflecting surface 12C can be formed within the area range of the upper surface of the mirror part 12. Although the mirror part 12 having the reflecting surface 12C that reflects light is described in this example, a form in which a reflecting surface 12C that reflects sound waves, electromagnetic waves, or the like is implemented is also possible.
[0072] The mirror support part 14 is connected to the mirror part 12, and supports the mirror part 12 so as to be rotatable about a rotation axis R.sub.A. The mirror support part 14 is constituted by a first torsion bar part 20 and a second torsion bar part 22. The first torsion bar part 20 and the second torsion bar part 22 support the mirror part 12 from both sides in the axial direction of the rotation axis R.sub.A with respect to the mirror part 12. The first torsion bar part 20 corresponds to a form of first mirror support part, and the second torsion bar part 22 corresponds to a form of second mirror support part.
[0073] The piezoelectric actuator part 16 is connected to the mirror support part 14, and generates a driving force to rotate the mirror part 12 about the rotation axis R.sub.A.
[0074] The fixing frame 18 is a member that supports the piezoelectric actuator part 16. Since the mirror part 12 is supported by the piezoelectric actuator part 16 via the mirror support part 14, the fixing frame 18 functions as a member that indirectly supports the mirror part 12 via the piezoelectric actuator part 16. In addition, in the fixing frame 18, wiring and electronic circuits (not illustrated) are provided.
[0075] Hereinafter, for convenience of description, orthogonal xyz axes are introduced into
[0076] The micromirror device 10 has a substantially line symmetrical structure (horizontally symmetrical in
[0077] [Shape of Mirror Part]
[0078] The mirror part 12 of this example has a rectangular shape in a plan view. However, when the invention is implemented, the shape of the mirror part 12 is not particularly limited. The shape is not limited to the rectangular shape illustrated in
[0079] In addition, as an example of another functional shape that can be achieved by the mirror part, as described in JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, Vol. 21, 6 (2012), 1303-1310, there may be cases where a deformation prevention frame which suppresses dynamic deformation of the reflecting surface during scan driving. For example, as illustrated in
[0080] [Structure of Piezoelectric Actuator Part]
[0081] As illustrated in
[0082] As illustrated on the left side of
[0083] Each of first base end parts 36A and 36B which are base end parts on both sides in the rotation axis direction (x-axis direction) in the first actuator part 30 is fixed to the fixing frame 18. The first actuator part 30 is supported by the fixing frame 18 in a both-end supported beam structure by a configuration in which each of the first base end parts 36A and 36B is fixed to the fixing frame 18. The term both-end supported beam structure is synonymous with doubly supported beam structure. The fixing frame 18 corresponds to a form of fixing part.
[0084] The shape of the fixing frame 18 is not limited to the example of
[0085] For example, instead of the fixing frame 18 illustrated in
[0086] The first base end part 36A illustrated on the left side of
[0087] Similarly, the first base end part 36B illustrated on the right side of
[0088] The first actuator part 30 is a piezoelectric actuator having a both end fixed type both-end supported beam structure in which each of the first base end parts 36A and 36B positioned on both sides in the x-axis direction is restrained by the fixing frame 18.
[0089] Each of the first torsion bar part 20 and the second torsion bar part 22 is connected to the first actuator part 30 in the vicinity of the fixed end of the first actuator part 30, that is, in the vicinity of the first base end parts 36A and 36B, which are root portions where the first actuator part 30 starts to displace.
[0090] The same is applied to the second actuator part 40, and as illustrated on the left side of
[0091] Each of the connection portion 42A between the second actuator part 40 and the connection part 42 and the connection portion 44A between the second actuator part 40 and the connection part 44 corresponds to a form of the second connection point. Otherwise, each of the connection part 42 and the connection part 44 can be interpreted as corresponding to a form of second connection point.
[0092] Each of the second base end parts 46A and 46B which are base end parts on both sides in the rotation axis direction (x-axis direction) in the second actuator part 40 is fixed to the fixing frame 18. That is, the second actuator part 40 is supported by the fixing frame 18 in a both-end supported beam structure by a configuration in which each of the second base end parts 46A and 46B is fixed to the fixing frame 18.
[0093] The second base end part 46A illustrated on the left side of
[0094] Similarly, the second base end part 46B illustrated on the right side of
[0095] The second actuator part 40 is a piezoelectric actuator having a both end fixed type both-end supported beam structure in which both the second base end parts 46A and 46B on both sides in the x-axis direction are restrained by the fixing frame 18. Each of the first torsion bar part 20 and the second torsion bar part 22 is connected to the second actuator part 40 in the vicinity of the fixed end of the second actuator part 40, that is, in the vicinity of the second base end parts 46A and 46B, which are root portions where the second actuator part 40 starts to displace.
[0096] By causing the first actuator part 30 and the second actuator part 40 to bend in opposite directions, the first torsion bar part 20 and the second torsion bar part 22 are be moved in a direction in which they rotate about the rotation axis R.sub.A, such that the mirror part 12 can be driven to be tilted. That is, by performing driving to bend the first actuator part 30 and the second actuator part 40 in opposite directions, the first torsion bar part 20 and the second torsion bar part 22 are induced to undergo tilt displacement, and the mirror part 12 Is rotated about the rotation axis R.sub.A. That is, the reflecting surface 12C of the mirror part 12 is tilted.
[0097] <<Shape of Piezoelectric Actuator Part>>
[0098] Each of the first actuator part 30 and the second actuator part 40 in this example has an actuator shape with a substantially semicircular arc shape in a plan view, and the two are combined to form the piezoelectric actuator part 16 having a substantially annular shape. In
[0099] <<Arrangement of Electrode Parts>>
[0100] The first actuator part 30 has, as the upper electrodes thereof, one first upper electrode part 51 and two second upper electrode parts 52A and 52B. That is, the upper electrodes of the first actuator part 30 has an electrode arrangement structure in an electrode division form divided into the first upper electrode part 51 and the second upper electrode parts 52A and 52B with respect to the longitudinal direction of a beam along the shape of a movable part 38 corresponding to a portion of the beam (beam) that connects the one first base end part 36A and the other first base end part 36B. The first upper electrode part 51 and the second upper electrode parts 52A and 52B are electrodes that are independent (that is, insulated and separated) from each other.
[0101] When a length direction along the shape of the movable part 38 from the one first base end part 36A to the other first base end part 36B in the first actuator part 30 is referred to as the length direction of the first actuator part 30, the first actuator part 30 has a structure in which the second upper electrode part 52A, the first upper electrode part 51, and the second upper electrode part 52B are sequentially arranged side by side along the length direction of the first actuator part 30 from the left in
[0102] The lower electrodes of the first actuator part 30 are also divided into the same division form corresponding to the electrode division form of the upper electrodes. That is, the first actuator part 30 has a first lower electrode part 71 and second lower electrode parts 72A and 72B as the lower electrodes which respectively oppose the first upper electrode part 51 and the second upper electrode parts 52A and 52B. The first actuator part 30 has an electrode arrangement structure in which the second lower electrode part 72A, the first lower electrode part 71, and the second lower electrode part 72B are sequentially arranged side by side along the length direction of the first actuator part 30 from the left in
[0103] A first piezoelectric conversion part 81 is formed by a laminated structure in which a piezoelectric body (see reference numeral 166 in
[0104] Similarly, second piezoelectric conversion parts 82A and 82B are formed by a laminated structure in which piezoelectric bodies are interposed between the second upper electrode parts 52A and 52B and the second lower electrode parts 72A and 72B, respectively. In the second piezoelectric conversion part 82A, a pair of the second upper electrode part 52A and the second lower electrode part 72A functions as an electrode pair, and in the second piezoelectric conversion part 82B, a pair of the second upper electrode part 52B and the second lower electrode part 72B functions as an electrode pair.
[0105] The second actuator part 40 also has the same structure as the first actuator part 30. The second actuator part 40 has, as the upper electrodes thereof, two third upper electrode parts 63A and 63B and one fourth upper electrode part 64. That is, the upper electrodes of the second actuator part 40 has an electrode arrangement structure in an electrode division form divided into the third upper electrode parts 63A and 63B and the fourth upper electrode part 64 with respect to the longitudinal direction of a beam along the shape of a movable part 48 corresponding to a portion of the beam (beam) that connects the one second base end part 46A and the other second base end part 46B.
[0106] The third upper electrode parts 63A and 63B and the fourth upper electrode part 64 are electrodes which are independent (that is, insulated and separated) from each other. When a length direction along the shape of the movable part 48 from the one second base end part 46A to the other second base end part 46B in the second actuator part 40 is referred to as the length direction of the second actuator part 40, the second actuator part 40 has a structure in which the third upper electrode part 63A, the fourth upper electrode part 64, and the third upper electrode part 63B are sequentially arranged side by side along the length direction of the second actuator part 40 from the left in
[0107] In addition, the lower electrodes of the second actuator part 40 are also divided into the same division form corresponding to the electrode division form of the upper electrodes. That is, the second actuator part 40 has third lower electrode parts 93A and 93B and a fourth lower electrode part 94 as the lower electrodes which respectively oppose the electrode parts of the third upper electrode parts 63A and 63B and the fourth upper electrode part 64 with piezoelectric bodies interposed therebetween. The second actuator part 40 has an electrode arrangement structure in which the third lower electrode part 93A, the fourth lower electrode part 94, and the third lower electrode part 93B are sequentially arranged side by side along the length direction of the second actuator part 40 from the left in
[0108] Third piezoelectric conversion parts 103A and 103B are formed by a laminated structure in which piezoelectric bodies are interposed between the third upper electrode parts 63A and 63B and the third lower electrode parts 93A and 93B. In the third piezoelectric conversion part 103A, a pair of the third upper electrode part 63A and the third lower electrode part 93A functions as an electrode pair, and in the third piezoelectric conversion part 103B, a pair of the third upper electrode part 63B and the third lower electrode part 93B function as an electrode pair.
[0109] Similarly, a fourth piezoelectric conversion part 104 is formed by a laminated structure in which a piezoelectric body is interposed between the fourth upper electrode part 64 and the fourth lower electrode part 94. In the fourth piezoelectric conversion part 104, a pair of the fourth upper electrode part 64 and the fourth lower electrode part 94 functions as an electrode pair.
[0110] For each of the upper electrodes and the lower electrodes of the piezoelectric actuator part 16, regarding a plurality of the electrode parts (51, 52A, 52B, 63A, 63B. 64, 71, 72A, 72B, 93A, 93B, 94) arranged to be divided from each other as described above, the electrode parts to which the same drive voltage is applied or the electrode parts set to be at the same potential (for example, a ground potential as a reference potential) may be connected to each other via an appropriate wiring part.
[0111] For example, the first upper electrode part 51 and the third upper electrode parts 63A and 63B forming a group may be connected to each other via a wiring part (not illustrated), and the second lower electrode parts 72A and 72B and the fourth lower electrode part 94 forming a group may be connected to each other through a wiring part (not illustrated).
[0112] Furthermore, in the example of
[0113] Although a schematic plan view is illustrated in
[0114] Details of the arrangement of each of the electrode pairs of the first piezoelectric conversion part 81, the second piezoelectric conversion parts 82A and 82B, the third piezoelectric conversion parts 103A and 103B, and the fourth piezoelectric conversion part 104 in the piezoelectric actuator part 16 will be described later.
Second Embodiment
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[0116] The micromirror device 110 illustrated in
[0117] That is, the piezoelectric actuator part 16 of the micromirror device 110 illustrated in
[0118] In the example of
[0119] The micromirror device 110 has a simple structure in which the connection parts 32, 34, 42, and 44 described with reference to
[0120] Furthermore, in the micromirror device 110 in
[0121] In the device structure of the second embodiment illustrated in
[0122] <Structure of Piezoelectric Actuator Part>
[0123] In the following description, the structure of the second embodiment having a simple device shape will be described as an example. However, the same description is applied to the structure of the first embodiment.
[0124]
[0125] The lower electrode 164 includes the first lower electrode part 71, the second lower electrode parts 72A and 72B, the third lower electrode parts 93A and 93B, and the fourth lower electrode part 94. However, in
[0126] A piezoelectric conversion part is formed by a laminated structure in which the piezoelectric body 166 is interposed between the lower electrode 164 and the upper electrode 168. The piezoelectric conversion part is a portion that functions as a piezoelectric element and can also be expressed as the term piezoelectric element part or piezoelectric active part. The piezoelectric conversion part can be used as a driving part for displacing the actuator part and can be used as a sensor part. Here, in order to simplify the description, a form in which the piezoelectric conversion part is used as a driving part will be described. The term driving part is synonymous with driving force generating part.
[0127] The first actuator part 30 and the second actuator part 40 function as piezoelectric unimorph actuators which undergo bending deformation in upward and downward directions in
[0128] In this embodiment, as illustrated in
[0129] That is, for each of the piezoelectric conversion parts of the first piezoelectric conversion part 81, the second piezoelectric conversion parts 82A and 82B, the third piezoelectric conversion parts 103A and 103B, and the fourth piezoelectric conversion part 104, laminated structure part of the upper electrode/the piezoelectric body/the lower electrode is divided.
[0130] Since a portion of the piezoelectric body 166 interposed between the upper and lower electrodes functions as a driving force generating part or a stress detection part (sensor part), unnecessary piezoelectric portions (such as portions that do not have at least one of the upper and lower electrodes) that do not directly contribute to the operation of the piezoelectric conversion part (piezoelectric element part) can be removed. By removing the unnecessary piezoelectric portions and separating the piezoelectric body in units of the piezoelectric conversion parts, the stiffness of the actuator part is lowered, and the actuator part can be easily deformed.
[0131] When the invention is implemented, separation of the piezoelectric layers corresponding to the arrangement of the divided electrode parts (division by removal of the unnecessary portions) is not necessarily required. The piezoelectric layer may not be divided in units of the piezoelectric conversion parts and may also be used as a single sheet of (single) piezoelectric film.
[0132] In addition, the second embodiment, the example in which each electrode part of the first upper electrode part 51, the second upper electrode parts 52A and 52B, the third upper electrode parts 63A and 63B, the fourth upper electrode part 64, the first lower electrode part 71, the second lower electrode parts 72A and 72B, the third lower electrode parts 93A and 93B, and the fourth lower electrode part 94 is formed by a single electrode is described. However, the electrode parts (51, 52A, 52B, 63A, 63B, 64, 71, 72A, 72B, 93A, 93B, 94) are not limited to the embodiment in which each electrode part is formed by a single electrode, and a single electrode part may also be formed by a plurality of electrodes.
[0133] The film thickness of the respective layers illustrated in
[0134] <Description of Operation of Piezoelectric Actuator Part>
[0135] Next, the operation of the piezoelectric actuator part 16 will be described. Here, an example in which regarding the first piezoelectric conversion part 81 and the third piezoelectric conversion parts 103A and 103B illustrated in
[0136] In order to simplify the description, a voltage waveform V.sub.11 applied to the first upper electrode part 51 and a voltage waveform V.sub.21 applied to the third upper electrode parts 63A and 63B are set to be the same voltage waveform V.sub.1 (V.sub.11=V.sub.21=V.sub.1), and a voltage waveform V.sub.12 applied to the second lower electrode parts 72A and 72B and a voltage waveform V.sub.22 applied to the fourth lower electrode part 94 are set to be the same voltage waveform V.sub.2 (V.sub.12=V.sub.22=V.sub.2). Furthermore, the voltage waveform V.sub.1 and the voltage waveform V.sub.2 have in an in-phase relationship.
[0137] Regarding the voltage waveform of the drive voltage, for example, the expressions of the voltage waveforms V.sub.1 and V.sub.2 are respectively expressed as follows.
V.sub.1=V.sub.off1+V.sub.1A sin t
V.sub.2=V.sub.off2+V.sub.2A sin t
[0138] In the above expressions, V.sub.1A and V.sub.2A are the voltage amplitudes, is the angular frequency, and t is the time.
[0139] The voltage amplitudes V.sub.1A and V.sub.2A can be arbitrary values of 0 or more, respectively. That is, the values are arbitrary values that satisfy V.sub.1A0, and V.sub.2A0. The offset voltages V.sub.off1 and V.sub.off2 are arbitrary. It is preferable to set the offset voltage such that, for example, V.sub.1 and V.sub.2 do not exceed the polarization reversal voltage of the piezoelectric body. The polarization reversal voltage is a voltage corresponding to the coercive electric field.
[0140] By applying the voltage waveforms V.sub.1 and V.sub.2 which are in phase as described above, the first actuator part 30 and the second actuator part 40 undergo bending deformation due to the inverse piezoelectric effect of the piezoelectric body 166.
[0141] The drive voltage of the voltage waveform V.sub.1 corresponds to a form of first drive voltage, and the drive voltage of the voltage waveform V.sub.2 corresponds to a form of second drive voltage.
[0142] As the simplest example, it is possible to set V.sub.1=V.sub.2, and it is possible to cause the first actuator part 30 and the second actuator part 40 to bend in opposite directions by using the voltage waveform V.sub.1 of a single type of drive voltage.
[0143] By causing the frequency of the voltage waveform to be coincident with a resonance frequency corresponding to a resonance mode in which the first torsion bar part 20 and the second torsion bar part 22 undergo tilt displacement, the mirror part 12 undergoes significant tilt displacement, and thus a wide range can be scanned.
[0144] <Relationship Between Stress Distribution During Driving in Resonance Mode Vibration and Arrangement of Electrode Parts>
[0145]
[0146] In
[0147] In addition,
[0148] In a case where the first actuator part 30 and the second actuator part 40 are in the bending deformation state illustrated in
[0149] The compressive stress and the tensile stress mentioned here are defined by selecting two principal stresses in a plane substantially orthogonal to the film thickness direction of the piezoelectric body 166 from three orthogonal principal stress vectors and determining the direction with a higher absolute value (the direction with the maximum principal stress). In a case where the film thickness direction is set to the z axis, the two principal stresses in the plane substantially orthogonal to the film thickness direction are stresses generated in the x-y plane, and correspond to .sub.1 and .sub.2 in
[0150] The reason for the above definition is that the dimensions of the actuator part are generally planar in the piezoelectric MEMS device and the stress .sub.3 in the film thickness direction can be regarded as almost 0. The phrase the dimensions are planar means that the height is sufficiently smaller than the dimension in the plane direction. The term stresses in opposite directions is determined on the basis of the above definition. The plane direction of the x-y plane described above corresponds to the in-plane direction orthogonal to the film thickness direction of the piezoelectric body.
[0151] In addition, in
[0152] According to the stress distribution as illustrated in
[0153] That is, the first piezoelectric conversion part 81 is provided for the tensile stress region 171 in
[0154] The stress distribution during an operation due to resonance mode vibration (resonance driving) can be analyzed by using a mode analysis method with parameters such as device dimensions, the Young's modulus of a material, and device shapes, which are given by using a well-known finite element method software. When the device is designed, the stress distribution in the piezoelectric body at the time of driving in the resonance mode is analyzed, the regions of the piezoelectric conversion parts are divided so as to correspond to the division of the compressive stress regions and the tensile stress regions in the stress distribution on the basis of the analysis result, and the arrangement of the first piezoelectric conversion part 81, the second piezoelectric conversion parts 82A and 82B, the third piezoelectric conversion parts 103A and 103B, and the fourth piezoelectric conversion part 104 is determined.
[0155] In addition, from the viewpoint of groups of the piezoelectric conversion parts corresponding to regions with common stress directions, the piezoelectric conversion parts can be divided into two groups. The first piezoelectric conversion part 81 and the third piezoelectric conversion parts 103A and 103B belong to a first group (first electrode group), the second piezoelectric conversion parts 82A and 82B and the fourth piezoelectric conversion part 104 belong to a second group (second electrode group).
[0156] In the arrangement of the electrode parts divided as described above, any one electrode part of the upper electrode part and the lower electrode part of the piezoelectric conversion parts (piezoelectric conversion parts belonging to the same group) corresponding to the region with the same stress direction are set to be at the ground potential, and the in-phase drive voltage is applied the other electrode part. In addition, the pressure conversion parts (piezoelectric conversion part belonging to different groups) corresponding to the region of different stress directions (stresses in opposite directions) are configured so that the lower electrode of the piezoelectric conversion part belonging to one group is set to be at the ground potential and the voltage waveform V.sub.1 is applied to the upper electrode while the upper electrode of the piezoelectric conversion part belonging to the other group is set to be at the ground potential and the voltage waveform V.sub.2 in phase with V.sub.1 is applied to the lower electrode. Accordingly, in the most efficient manner, a piezoelectric force can be converted into tilt displacement.
[0157] In the first actuator part 30, as illustrated in
[0158] Furthermore, in
[0159] As another configuration, a form in which the first upper electrode part 51 and the third upper electrode parts 63A, 63B are set to be at the ground potential and the voltage waveform V.sub.1 of the drive voltage is applied to the first lower electrode part 71 and the third lower electrode parts 93A and 93B while the second lower electrode parts 72A and 72B and the fourth lower electrode part 94 are set to be at the ground potential and the voltage waveform V.sub.2 of the drive voltage is applied to the second upper electrode parts 52A and 52B and the fourth upper electrode part 64 is also possible. In this case, the electrode parts having the same potential are connected by wiring parts.
[0160] Furthermore, in addition to the embodiment in which all of the first piezoelectric conversion part 81, the second piezoelectric conversion parts 82A and 82B, the third piezoelectric conversion parts 103A and 103B, and the fourth piezoelectric conversion part 104 are used as driving force generating parts, an embodiment in which some piezoelectric conversion parts thereof are used as sensor parts (stress detection part) for sensing (for detection) is also possible. Moreover, each of the electrode parts constituting the electrode pair of each piezoelectric conversion part is not limited to an embodiment constituted by a single electrode, and at least one electrode part among the electrode parts (51, 52A, 52B, 63A, 63B, 64, 71, 72A, 72B, 93A, 93B, and 94) may also be constituted by a plurality of electrodes.
[0161] <Use Form and Modification Example of Device>
[0162] Hereinafter, an example of a mirror driving method of the micromirror device according to the embodiment of the present invention will be described.
Use Example 1
[0163]
[0164] In this case, as illustrated in
[0165] On the other hand, for the second piezoelectric conversion parts 82A and 82B of the first actuator part 30 and the fourth piezoelectric conversion part 104 of the second actuator part 40, a lower electrode driving system which is driven by connecting each of the upper electrode parts (52A, 52B, and 64) to the ground potential and applying the voltage waveform V.sub.2 in phase with V.sub.1 to the lower electrode parts (72A, 72B, and 94) is employed.
[0166] In this manner, by using all of the piezoelectric conversion parts (81, 82A, 82B, 93A, 93B, and 94) as the driving force generating parts, a large displacement angle can be realized.
[0167] It addition, the phrase in phase is not limited to a phase difference of 0 and includes an allowable range of a phase difference (for example, 10) that can be substantially treated as the same phase to a degree at which no problems are caused in practice.
[0168] For the plurality of piezoelectric element parts (piezoelectric conversion parts) that function as the driving force generating parts, in order to adjust the operation performance between the elements, the voltage amplitude and the phase difference of the drive voltage applied to each piezoelectric element part may be appropriately adjusted. A case of changing the voltage amplitude and the phase difference within the range of such adjustment is also included in the scope of the implementation of the present invention.
Use Example 2
[0169]
[0170] In
[0171] The detection electrode is set to be at a floating potential, and detects a voltage generated by the piezoelectric effect (positive piezoelectric effect) of the piezoelectric body 166. In FIG. 9, the electrodes indicated by s.sub.1 and s.sub.2 are detection electrodes for extracting a signal for sensing and represent electrodes set to be at a floating potential. Setting at the floating potential is synonymous with setting to the electrically open state.
[0172] As described above, when some electrode parts among the plurality of electrode parts are used as voltage detection parts, a voltage generated by the positive piezoelectric effect of the piezoelectric body can be detected, and from the detected voltage signal (detection signal), the stress of the actuator part can be detected. That is, the voltage detection part functions as a stress detection part. Accordingly, a feedback driving circuit that monitors the driven state of the mirror part 12 during driving of the mirror part 12 and enables the resonance state to be maintained or the like can be configured.
[0173] As illustrated in
Use Example 3
[0174]
[0175] Each of the first lower electrode part 71 and the fourth upper electrode part 64 is constituted by a single electrode. However, the first lower electrode part 71 and the fourth upper electrode part 64 may also be divided into a plurality of electrodes according to the arrangement of the electrodes 51A, 51B, and 51C of the first upper electrode part 51 and the electrodes 94A, 94B, and 94C of the fourth lower electrode part 94.
[0176] Among the plurality of electrodes 51A to 51C constituting the first upper electrode part 51, the electrode 51B disposed at the center is used as a voltage detection part (electrode for sensing) at a floating potential, and the remaining (left and right) electrodes 51A and 51C are used as drive voltage application parts (that is, driving force generating parts).
[0177] Similarly, among the plurality of electrodes 94A to 94C constituting the fourth lower electrode part 94, the electrode 94B disposed at the center is used as a voltage detection part (electrode for sensing) at a floating potential and the remaining (left and right) electrodes 94A and 94C are used as drive voltage application parts (that is, driving force generating parts). Accordingly, stress detection can be achieved while minimizing the electrode region occupied by the voltage detection parts and maintaining a high scan angle.
[0178] In
[0179] <Production Method of Example 1>
[0180] As Example 1, a micromirror device was fabricated by the following production method.
[0181] [Procedure 1] On a silicon on insulator (SOI) substrate having a laminated structure of a handle layer of 350 micrometers [m], a box layer of 1 micrometer [m], and a device layer of 24 micrometers [m], a Ti layer of 30 nanometers [nm] and an Ir layer of 150 nanometers [nm] were formed at a substrate temperature of 350 C. by a sputtering method. A conductive layer formed by the laminate of the Ti layer (30 nm) and the Ir layer (150 nm) corresponds to the lower electrode 164 described with reference to
[0182] [Procedure 2] A piezoelectric body (PZT) layer was formed into 2.5 micrometers [m] on the substrate in which the laminate of the lower electrode (Ti/Ir) was formed in Procedure 1, by sing a radio frequency (RF) sputtering device.
[0183] A mixed gas of 97.5% Ar and 2.5% O.sub.2 was used as the film formation gas, and a target material having a composition of Pb.sub.1.3((Zr.sub.0.52 Ti.sub.0.48).sub.0.88Nb.sub.0.12)O.sub.3 was used. The film formation pressure was set to 2.2 millitorr [mTorr] (about 0.293 pascal [Pa]), and the film formation temperature was set to 450 C. The obtained PZT layer was an Nb-doped PZT thin film to which Nb was added in an atomic compositional ratio of 12%.
[0184] The compositional ratio of Pb contained in the formed PZT thin film was measured by an X-ray fluorescence analysis (XRF) method, and the molar ratio Pb/(Zr+Ti+Nb) was 1.05. That is, the chemical formula at this time is a=1.05 with =1 represented in Pb.sub.a(Zr.sub.x,Ti.sub.y,Nb.sub.b-x-y).sub.bO.sub.c.
[0185] As described above, the ratio of the amount a of Pb contained in the PZT thin film having a perovskite structure that is actually obtained can take a value other than 1.00 due to the presence of interstitial atoms, defects, and the like. In addition, for the same reason, the ratio c of O atoms can also take a value other than 3.00.
[0186] [Procedure 3] On the substrate on which the PZT layer is formed in procedure 2, an upper electrode having a laminated structure of Pt/Ti was patterned by a lift-off method, pattern etching of the PZT thin film was performed by ICP (inductively coupled plasma) dry etching. Regarding the patterning of the lower electrode, a desired pattern may be formed in the lower electrode forming process of Procedure 1, and a desired pattern may be formed by etching in Procedure 3.
[0187] [Procedure 4] Thereafter, pattern etching of the device layer was performed by a silicon dry etching process, and the shapes of the actuator part, the mirror part, and the fixing frame were processed.
[0188] [Procedure 5] Next, the handle layer was subjected to deep reactive-ion etching (Deep RIE) from the rear surface of the substrate.
[0189] [Procedure 6] Last, the box layer was removed from the rear surface by dry etching, whereby a micromirror device having the configuration as illustrated in
[0190] In this example, the PZT thin film was directly formed on the substrate by the sputtering method, and the dry etching was thereafter performed. As described above, by thinning the piezoelectric body, the fabrication process can be simplified and fine patterning can be achieved. Accordingly, the yield can be significantly improved, a further reduction in the size of the device can be coped with.
[0191] However, when the present invention is implemented, the piezoelectric body of the actuator part is not limited to the thin film piezoelectric body, and a unimorph actuator may also be formed by attaching a bulk piezoelectric body to a vibration plate.
[0192] <Examples of Dimensions of Example 1>
[0193] As an example of the shape of the device according to Example 1, specific examples of dimensions of Example 1 are illustrated in
[0194] The dimension a is the length in the x-axis direction of the base end parts (164A and 164B). The dimension b is the width dimension in the x-axis direction of the beam (beam) portions in the actuator parts (30 and 40). The dimension c is the length in the x-axis direction of the torsion bar parts (20 and 22). The dimension d is the width dimension in the x-axis direction of the mirror part 12. The dimension e is the length of the mirror part 12 in the y-axis direction. The dimension f is the width dimension in the y-axis direction of the torsion bar parts (20 and 22). The dimension g is the width dimension in the y-axis direction of the base end parts (146A and 146B).
Comparative Example 1
[0195] A micromirror device according to Comparative Example 1 as illustrated in
[0196] In the device 210 illustrated in
[0197]
V.sub.3=V.sub.off3+V.sub.3A sin(t+)
[0198] In the above expression, V.sub.off3 is the offset voltage, V.sub.3A is the voltage amplitude, is the phase difference, and =180 is given herein.
[0199] V.sub.3A may be any value equal to or greater than 0, but may also be the same value (V.sub.3A=V.sub.2A=V.sub.1A) as the voltage waveforms V.sub.1 and V.sub.2 described above. The offset voltage V.sub.off3 is arbitrary, and is preferably set such that, for example, V.sub.3 does not exceed the polarization reversal voltage of the piezoelectric body. In a device evaluation experiment, which will be described later, the offset voltage V.sub.off3 for the voltage waveform V.sub.3 and the offset voltages V.sub.off1 and V.sub.off2 for the voltage waveforms V.sub.1 and V.sub.2 are the same voltage value V.sub.off (=V.sub.off1=V.sub.off2=V.sub.off3).
[0200] As described above, in the form of
[0201] In a case of where stress detection is performed in the device form illustrated in
[0202] <Evaluation Experiment on Operation of Device>
[0203] An experiment was conducted to compare the operation performance of the device fabricated in Example 1 and the device fabricated in Comparative Example 1.
[0204] As experiment subjects, four types of devices, Example 1 (driving only), Example 1 (with angle sensing), Comparative Example 1 (driving only), and Comparative Example 1 (with angle sensing) evaluated. Example 1 (driving only), Example 1 (with angle sensing), Comparative Example 1 (driving only), and Comparative Example 1 (with angle sensing) respectively correspond to forms of
[0205] Furthermore, the dimensions of the device are all exemplified in
[0206] The voltage waveforms V.sub.1 and V.sub.2 in a sine wave having a voltage amplitude V.sub.PP are input to the electrode parts for driving in each device to induce resonance vibration accompanied with the rotational motion of the mirror part 12, and the mechanical deflection angle of the mirror part 12 was measured at a laser scan angle. Regarding a method of applying the drive voltage, the devices of Example 1 and Example 1 (with angle sensing) conform to the illustration of
[0207] The results of the experiment are shown in
[0208] As is apparent from
[0209] <Piezoelectric Material>
[0210] A piezoelectric body suitable for this embodiment may be a body including one or two or more perovskite type oxides represented by the following general formula (P-1).
General formula ABO.sub.3(P-1)
[0211] In the formula, A is an element in A-site and is at least one element including Pb.
[0212] B is an element in B-site and is at least one element selected from the group consisting of Ti, Zr, V, Nb, Ta, Sb, Cr, Mo, W, Mn, Sc, Co, Cu, In, Sn, Ga, Zn, Cd, Fe, Mg, Si, and Ni.
[0213] O is an oxygen element.
[0214] The molar ratio between the A-site element, the B-site element, and the oxygen element is 1:1:3 as a standard, and the molar ratio may also be deviated from the reference molar ratio within a range in which the perovskite structure can be achieved.
[0215] The perovskite type oxides represented by the above general formula (P-1) include: lead-containing compounds such as lead titanate, lead zirconate titanate (PZT), lead zirconate, lanthanum lead titanate, lead lanthanum zirconate titanate, lead magnesium niobate-lead zirconate titanate, lead nickel niobate-lead zirconate titanate, and lead zinc niobate-lead zirconate titanate and mixed crystal systems thereof; and lead-free compounds such as barium titanate, strontium barium titanate, sodium bismuth titanate, bismuth potassium titanate, sodium niobate, potassium niobate, lithium niobate, and bismuth ferrite and mixed crystal systems thereof.
[0216] In addition, the piezoelectric film of this embodiment preferably includes one or two or more perovskite type oxides (P-2) represented by the following general formula (P-2).
General formula A.sub.a(Zr.sub.x,Ti.sub.y,M.sub.b-x-y).sub.bO.sub.c(P-2)
[0217] In the formula, A is an element in A-site and is at least one element including Pb.
[0218] M is at least one element selected from the group consisting of V, Nb, Ta, and Sb.
[0219] 0<x<b, 0<y<b, and 0bxy are satisfied.
[0220] a:b:c=1:1:3 is standard, and the molar ratio may be deviated from the reference molar ratio within a range in which the perovskite structure can be achieved.
[0221] The perovskite type oxide (P-2) is an oxide in which a part of the B-site of intrinsic PZT or PZT is substituted with M. It is known that in the PZT to which various donor ions having a valence higher than the valence of the substituted ion are added, characteristics such as piezoelectric performance are improved compared to the intrinsic PZT. It is preferable that M is one or two or more donor ions having a valence higher than that of tetravalent Zr or Ti. As such donor ions, there are V.sup.5+, Nb.sup.5+, Ta.sup.5+, Sb.sup.5+, Mo.sup.6+, and W.sup.6+.
[0222] The range of b-x-v is not particularly limited as long as the perovskite structure can be achieved. For example, in a case where M is Nb, the molar ratio Nb/(Zr+Ti+Nb) is preferably 0.05 or more and 0.25 or less, and more preferably 0.06 or more and 0.20 or less.
[0223] Since a piezoelectric film made of the perovskite type oxides represented by the above general formulas (P-1) and (P-2) has a high piezoelectric strain constant (d31 constant), a piezoelectric actuator comprising the piezoelectric film has excellent displacement characteristics.
[0224] Furthermore, the piezoelectric actuator comprising the piezoelectric film made of the perovskite type oxides represented by the general formulas (P-1) and (P-2) has voltage-displacement characteristics with excellent linearity. These piezoelectric materials exhibit good actuator characteristics and sensor characteristics when the present invention is implemented. In addition, the perovskite type oxide represented by the general formula (P-2) has a higher piezoelectric constant than that represented by the general formula (P-1).
[0225] As a specific example of the piezoelectric body in this embodiment, for example, a lead zirconate titanate (PZT) thin film doped with Nb in an atomic composition percentage of 12% may be used. By forming a film of PZT doped with 12% Nb by a sputtering method or the like, a thin film having piezoelectric characteristics as high as a piezoelectric constant of d31=250 m/V can be stably fabricated.
[0226] In addition, in this example, PZT is selected as the piezoelectric material used for the actuator part (the driving force generating part and the stress detection part), but the piezoelectric material does not need to be limited to this material. For example, a lead-free piezoelectric body such as BaTiO.sub.3, KNaNbO.sub.3, or BiFeOs may be used, and a non-perovskite piezoelectric body such as AlN and ZnO.sub.2 may also be used.
[0227] <Film Formation Method>
[0228] A vapor deposition method is preferable as the film formation method of the piezoelectric body. For example, in addition to the sputtering method, various methods such as an ion plating method, a metal organic chemical vapor deposition (MOCVD) method, and a pulse laser deposition (PLD) method may be applied. It is also conceivable to use a method other than the vapor deposition method (for example, sol-gel method). A configuration in which a piezoelectric thin film is directly formed on a substrate by a vapor deposition method or a sol-gel method is preferable. In particular, the piezoelectric body 166 of this embodiment is preferably a thin film having a film thickness of 1 m or more and 10 m or less.
[0229] <Waveforms of Drive Voltages>
[0230] In Example 1 described above, voltage waveforms which are in phase are used as the waveforms of the drive voltages. Although the voltage waveforms V.sub.1 and V.sub.2 are set to be in phase (phase difference =0), the phases of the two do not need to be completely coincident with each other, and the phase difference therebetween may be shifted to some extent from 0. For example, in a case where a component (noise vibration) other than the intended resonance vibration occurs, there may be cases where the phase difference between V.sub.1 and V.sub.2 is shifted from 0 by a small amount from in order to eliminate this component. For example, when the phase difference is within a range of 10 degrees, the waveforms can be regarded as being in phase.
[0231] In addition, the voltage amplitudes V.sub.1A and V.sub.2A of the voltage waveforms may be different from each other or may be any value including 0 V. Furthermore, the application voltage is not limited to a sine wave, and periodic waveforms such as a square wave and a triangular wave may also be applied thereto.
[0232] Moreover, as described above, when V.sub.1=V.sub.2 is satisfied, only one type of drive waveform can be used for the device, and a simple driving circuit can be formed.
[0233] When the present invention is implemented, the types of the drive waveforms may be two or more types. For example, as illustrated in
[0234] As these four types of drive voltages, for example, the following waveforms may be used.
V.sub.11=V.sub.off1+V.sub.11A sin t
V.sub.12=V.sub.off12+V.sub.12A sin t
V.sub.21=V.sub.off21+V.sub.21A sin t
V.sub.22=V.sub.off2+V.sub.22A sin t
[0235] In the expressions, each of V.sub.11A, V.sub.12A, V.sub.21A, and V.sub.22A is the voltage amplitude, a is the angular frequency, and t is the time.
[0236] Each of V.sub.11A, V.sub.12A, V.sub.21A, and V.sub.22A may have an arbitrary value of 0 or more. All of V.sub.11A, V.sub.12A, V.sub.21A, and V.sub.22A may be set to different values, or some or all thereof may also be set to the same value. In addition, in the above expressions, the phases of V.sub.11 and V.sub.21 are coincident with each other, and the phases of V.sub.12 and V.sub.22 are coincident with each other. However, these phases do not need to be completely coincident with each other, and a slight phase shift of about 10 is acceptable.
[0237] <Drive Voltage Supplying Means (Driving Control Part)>
[0238]
[0239] The voltage waveform V.sub.2 for driving is supplied from the driving circuit 310 to the second lower electrode parts 72A and 72B of the first actuator part 30 and the electrodes 94A and 94C of the second actuator part 40. In addition, in
[0240] The driving circuit 310 supplies the voltage waveforms V.sub.1 and V.sub.2 of the drive voltage for causing the mirror part 12 to undergo resonance driving at near the resonance frequency fx of the resonance mode in which the mirror part 12 (see
[0241] Each of the electrode 51B of the first actuator part 30 and the electrode 94B of the second actuator part 40, which are used for sensing, is connected to a detection circuit 312.
[0242] The first lower electrode part 71 and the second upper electrode parts 52A and 52B in the first actuator part 30 and the third lower electrode parts 93A and 93B and the fourth upper electrode part 64 in the second actuator part 40 are connected to the common terminal (V.sub.0 terminal, for example, GND terminal) of the driving circuit 310 or the detection circuit 312. Each electrode is connected to the driving circuit 310 or the detection circuit 312 via a wiring member such as wire bonding or a pattern wiring part on a substrate (not illustrated).
[0243] A voltage signal is detected from the electrode 51B and the electrode 94B for sensing via the detection circuit 312, and the detection results are notified to a control circuit 314. On the basis of the signal obtained from the detection circuit 312, the control circuit 314 sends a control signal to the driving circuit 310 so as to maintain resonance and controls the application of the drive voltages to the first actuator part 30 and the second actuator part 40.
[0244] For example, feedback is applied to the driving circuit 310 so as to maintain resonance so that the phases of the waveform of the drive voltage applied to the piezoelectric actuator parts and the waveform detected from the stress detection part (sensor part) have predetermined values. The control circuit 314 controls the voltage or driving frequency applied to the piezoelectric actuator part based on the detection signal obtained from the stress detection part of the mirror part 12.
[0245] Such a feedback control circuit may be embedded in the detection circuit 312. In addition, the driving circuit 310, the detection circuit 312, and the control circuit 314 may be collectively configured as an integrated circuit such as an application specific integrated circuit (ASIC).
Operational Effects of Embodiment
[0246] According to the above-described embodiment, since the electrode parts are arranged according to the stress distribution generated in the piezoelectric bodies at the time of deformation of the actuator parts, the actuator parts can be efficiently driven, and compared to the configuration in the related art, a larger mirror tilt angle can be obtained.
[0247] Furthermore, according to the embodiment of the present invention, since the displacement efficiency is improved compared to the configuration in the related art, even in a case where some of the electrodes are used for stress detection, a sufficient displacement angle can be obtained. Moreover, according to this embodiment, since driving can be performed by using voltage waveforms which are in phase, the configuration of the driving circuit can be simplified. In particular, as the simplest configuration, a configuration in which the first actuator part 30 and the second actuator part 40 are displaced in opposite directions by one type of voltage waveform.
[0248] <Another Example of Form of Piezoelectric Actuator Part>
[0249]
[0250] In the first actuator part 30 of the micromirror device 410 illustrated in
[0251] The first actuator part 30 and the second actuator part 40 having the actuator shape as illustrated in
[0252] As the actuator shapes of the first actuator part 30 and the second actuator part 40, various forms are possible. As illustrated in
[0253] <Modification Example of Mirror Support Part>
[0254] In the above-described embodiment, the first torsion bar part 20 and the second torsion bar part 22 are connected to positions coincident with the rotation axis R.sub.A of the mirror part 12, and are formed to extend in the axial direction of the rotation axis R.sub.A toward the outside of the mirror part 12. In addition,
[0255] For example, in a case where the substantially center portion in the longitudinal direction of the mirror part 12 (not limited to the true center point on design but the vicinity thereof) is the rotation axis R.sub.A, in addition to an embodiment in which a torsion bar is connected to a single point at the position substantially coincident with the rotation axis R.sub.A, a structure in which torsion bars are connected at positions of two or more points in axial symmetry with respect to the position of the rotation axis R.sub.A interposed therebetween within a range in which the position can be regarded as the substantially center portion, is also possible.
Application Example
[0256] The mirror driving device of the present invention can be used in various applications as an optical device that reflects light such as laser light and changes the traveling direction of light. For example, the mirror driving device can be widely applied to an optical deflector, an optical scanning device, a laser printer, a barcode reader, a display device, various optical sensors (distance measuring sensors and shape measurement sensors), an optical communication device, a laser projector, an optical coherence tomography diagnostic device, and the like. Furthermore, the present invention is not limited to the applications in which light is reflected, and can also be applied to a mirror device in applications in which sound waves are reflected.
[0257] In addition, the present invention is not limited to the above-described embodiments, and many modifications are possible by those with ordinary skill in the art within technical scope of the present invention.
EXPLANATION OF REFERENCES
[0258] 10: micromirror device [0259] 12: mirror part [0260] 12C: reflecting surface [0261] 13: deformation prevention frame [0262] 14: mirror support part [0263] 15: mirror part [0264] 16: Piezoelectric actuator part [0265] 18: fixing frame [0266] 20: first torsion bar part [0267] 22: second torsion bar part [0268] 30: first actuator part [0269] 32, 34: connection part [0270] 32A, 34A: connection portion [0271] 36A, 36B: first base end part [0272] 38: movable part [0273] 40: second actuator part [0274] 42, 44: connection part [0275] 42A, 44A: connection portion [0276] 46A, 46B: second base end part [0277] 48: movable part [0278] 51: first upper electrode part [0279] 52A, 52B: second upper electrode part [0280] 63A, 63B: third upper electrode part [0281] 64: fourth upper electrode part [0282] 71: first lower electrode part [0283] 72A, 72B: second lower electrode part [0284] 81: first piezoelectric conversion part [0285] 82A, 82B: second piezoelectric conversion part [0286] 93A, 93B: third lower electrode part [0287] 94: fourth lower electrode part [0288] 103A, 103B: third piezoelectric conversion part [0289] 104: fourth piezoelectric conversion part [0290] 110: Micromirror device [0291] 132, 134: connection portion [0292] 142: connection point [0293] 144: connection point [0294] 160: vibration plate [0295] 164: lower electrode [0296] 166: piezoelectric body [0297] 168: upper electrode [0298] 310: driving circuit [0299] 312: detection circuit [0300] 314: control circuit [0301] 410: Micromirror device