COMPOUND KOHLER SOLAR CONCENTRATOR WITH OPTIONAL SPECTRUM SPLITTING PHOTOVOLTAIC APPARATUS
20170200848 ยท 2017-07-13
Inventors
- Pablo Benitez (Madrid, ES)
- Juan Carlos Minano (Madrid, ES)
- Ruben MOHEDANO (Madrid, ES)
- Waqidi Falicoff (Talent, OR, US)
Cpc classification
H10F77/63
ELECTRICITY
Y02E10/52
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
International classification
H01L31/054
ELECTRICITY
Abstract
A high concentration photovoltaic device has a Fresnel lens having a front side and a back side, which may be mounted on a cover plate, and a mirror behind the Fresnel lens and facing the Fresnel lens. A secondary lens is unitary with the Fresnel lens and facing the mirror, and is typically on the inside of the cover plate in the center of the Fresnel lens. A photovoltaic cell in front of the secondary lens faces the mirror through the secondary lens. An additional focusing lens may be provided in front of the mirror. Two optical elements of said device form a Khler integrator between a remote source, usually the sun, in front of the device and the photovoltaic cell as a target. The mirror may be spectrally selective, with a secondary photovoltaic cell behind the mirror. Additional photovoltaic cells to collect unfocused light may surround the mirror.
Claims
1. A high concentration photovoltaic device, comprising: a Fresnel lens having a front side and a back side; a mirror behind the Fresnel lens and facing the Fresnel lens; a secondary lens unitary with the Fresnel lens and facing the mirror; and a photovoltaic cell in front of the secondary lens and facing the mirror through the secondary lens; wherein two optical elements of said device form a Khler integrator between a remote source in front of the Fresnel lens and the photovoltaic cell as a target.
2. The device of claim 1, wherein the unitary Fresnel lens and secondary lens are formed on the back of a cover plate.
3. The device of claim 2, wherein the cover plate is glass and the unitary Fresnel lens and secondary lens are of plastic molded onto the cover plate, and the photovoltaic cell is embedded in the plastic between the secondary lens and the cover plate.
4. The device of claim 2, further comprising a heat spreader between the photovoltaic cell and the cover plate, in thermal contact with the photovoltaic cell and the cover plate.
5. The device of claim 4, wherein the heat spreader further comprises arms radiating from the photovoltaic cell, the arms being in contact with a back side of the cover plate along the length of the arms.
6. The device of claim 4, further comprising a second heat spreader on a front side of the cover plate, the second heat spreader having arms in contact with the back side of the cover plate along the length of the arms, the arms of the second heat spreader being aligned in front of the arms of the first heat spreader and the second heat spreader being separated from the first heat spreader by the cover plate, so that at least some of the heat from the first heat spreader is conducted to the second heat spreader through the cover plate, is conducted radially outwards on the front side of the cover plate by the arms of the second heat spreader, and is returned to the cover plate by the second heat spreader for dissipation into the external environment.
7. The device of claim 1, further comprising a third lens in front of the mirror.
8. The device of claim 6, wherein two of the Fresnel lens, the secondary lens, and the third lens form the Khler integrator.
9. The device of claim 1, wherein the mirror is mounted tiltably relative to the Fresnel lens.
10. The device of claim 1, wherein the mirror is a frequency selective partially transmissive mirror, and the device further comprises a second photovoltaic cell behind the mirror.
11. The device of claim 9, wherein the photovoltaic cell in front of the secondary lens is a multi junction photovoltaic cell and the second photovoltaic cell is a single-junction photovoltaic cell.
12. The device of claim 10, wherein the mirror is a band-pass mirror comprising a long-pass mirror and a short-pass mirror.
13. The device of claim 11, wherein the long-pass mirror is partially transmissive at wavelengths longer than the pass-band of the band-pass mirror, the short-pass mirror is partially transmissive at wavelengths shorter than the pass-band of the band-pass mirror, and the two mirrors are matched so that wavelengths outside the pass-band at which each mirror is partially transmissive are wavelengths at which the other mirror is substantially completely reflective.
14. The device of claim 1, wherein the mirror is smaller in area than the Fresnel lens, further comprising an additional photovoltaic cell behind an outer part of the Fresnel lens outside the mirror, operative in use to generate electricity from light incident from directions other than directly in front of the Fresnel lens.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0056] The above and other aspects, features and advantages of the present invention will be apparent from the following more particular description thereof, presented in conjunction with the following drawings wherein:
[0057]
[0058]
[0059]
[0060]
[0061]
[0062]
[0063]
[0064]
[0065]
[0066]
[0067]
[0068]
[0069]
[0070]
[0071]
[0072]
[0073]
[0074]
[0075]
[0076]
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0077] A better understanding of various features and advantages of the present invention will be obtained by reference to the following detailed description and accompanying drawings, which set forth illustrative embodiments in which certain principles of the invention are utilized.
[0078] Reference is now made to
[0079]
[0080]
[0081]
[0082] The solar cells used for HCPV cannot convert the entire solar spectrum into electricity. With present day multi-junction (MJ) cells some of the spectrum is under-utilized. By adding a single junction solar cell that is designed for this unused spectrum, more of the solar spectrum can be converted to electricity.
[0083]
[0084] The CCF architecture is much simpler than some of the earlier approaches taught in the aforementioned inventors' previous applications. The new approach can easily handle both sky splitting and spectrum splitting in the same module, as exemplified by the embodiments of
[0085]
[0086] The rotation movement can be centered near the center of the mirror. The rotation center could also be more than a single point so that both rotation and displacement movements are combined to compensate for off-axis focal length variations. The movement could also be only a displacement parallel to the optical axis of the system that compensates focal length variations of the optical system.
[0087]
[0088] With the conventional FK system, the POE and SOE form the two-element Khler lens pair. With the addition of the 2.sup.nd lens, the Khler lens pair can be any combination of the three lenses. In
[0089]
[0090] In
[0091]
[0092]
[0093] Mirror 911 can either be a one or two-sided dichroic mirror. In
[0094] The method of designing the longpass filter of Table 1 can be summarized as follows. You start with the following seed formula: 0.73 (.75H.5L.75H)8 0.85(.75H.5L.75H)8 1.0(.75H.5L.75H)8 1.18(.75H.5L.75H)8 1.30(.75H.5L.75H)8, where H represents a quarter wave thickness of the high index material, in this case Tantalum Pentoxide, and the L represents a quarter wave thickness of the low index material, in this case Silicon Dioxide. The convention is that the stack is defined as from the medium (air) to the substrate (BK7 glass). The constants in the seed formula, 0.73, 0.85, 1.0, 1.18 and 1.30 can be modified as needed as can the number of terms of the (.75H.5L.75H)8. For example, the term with the constant 0.73 creates a high reflectance region centered at approximately 425 nm with a width of 100 nm and region of high transmittance at longer wavelengths. The next term with the constant 0.85 adds a reflectance zone centered at approximately 525 nm with a 100 nm width and region of high transmittance at longer wavelengths but with ripples going from approximately 50 to 90% transmittance below 475 nm, which is in reflectance zone relating to the 0.73 term. This lower rippled zone reinforces the reflection of the 0.73 term stack. By adjusting the constants for a number of (.75H.5L.75)8 terms an excellent starting long pass filter can be designed. Then one must set up the desired targets and apply optimization to reach the final design.
[0095] The targets are based on the desired 100% transmission zone, which in this case is 964 nm to 1028 nm, and the shorter wavelength region, where a 100% reflectance is desired, which in this case is 350 nm to 962 nm. Note that the targets are in 2 nm increments going from 350 nm to 1028 nm. No targets are set above 1028 nm, allowing the zone above 1028 nm to 1800 nm to have transmission ripples with spikes and troughs, which is this case may be desirable, as will be explained below. A target of 100% reflectance with a tolerance of 0.05 is set for the shorter wave band and a target of 100% transmission with a tolerance of 0.05 is set for the transmission band. The reference angle is set to 642 nm and the angle of incidence for all wavelengths is set to the mean wavelength of the bundle of rays striking the two-sided filter, which in this case is 12.5. Also setting minimum and maximum thickness for each element in the stack is useful to make sure the stack is manufacturable. For the design in Table 2 a minimum of 20 nm and maximum of 200 nm for all layers in the stack. Optimization using standard Simplex or Conjugate Gradient or others known in the prior art arrive readily to the solution.
[0096] The method of designing the shortpass filter uses the more standard starting seed formula of (LH)27L, where H and L are the same two materials in the longpass stack. In this case the zone of 100% transmission is set substantially the same as the longpass filter, while the 100% reflectance zone is set to start a few nm above the end of the transmission zone and end at the longest wavelength of the design, in this case 1800 nm. The tolerance settings for the transmission and reflectance zones are 0.1. And the angle of incidence for all the targets is chosen to be the median of the bundle of rays on the filter, which as before is 12.5 . In this case the lower reflectance band starting from 350 nm is allowed to float. The optimization approaches of refinement and synthesis can be used to closely meet the target goals. In this case for the design of Table 2 the approach used was the Optimac algorithm in the software Essential Macleod by The Thin Film Center, Inc of Arizona, USA.
[0097] After the long pass and short pass designs are completed, the two can be modeled as a complete two-sided filter on a substrate. The stacks can be further refined using optimization techniques with the targets now including the full range of wavelengths, which in this case are from 350 nm to 1800 nm. Typically, this is not required. However, another approach can be used which works quite well and is very easy to implement. The approach is to make small adjustments in the reference angle so that either the shortpass or longpass filters are either moved to the left on the transmission plot (toward the shorter wavelengths) or to the right (toward the longer wavelengths). If the transmission zones for the shortpass and longpass filters are a little wider than is required, this allows for adjustment of the two positions of the curves using the reference angle. And also it allows the designer to pick the zones of desired reflectance such that undesirable spikes in one of the filters in the reflectance zone lines up with a trough in the other in the same wavelength region. This works very well for the short wavelength region of the longpass filter where the spikes are very narrow in width but not so well for the longer wavelength. Still, even in the longer wavelength region there is a reflectance boost resulting from the multiplicative effect of having two filters.
TABLE-US-00001 TABLE 1 Design: Longpass - Front side Reference Wavelength (nm): 642 Optical Physical Packing Refractive Extinction Thickness Thickness Geometric Layer Material Density Index Coefficient (FWOT) (nm) Thickness Medium Air 1 0 1 Ta2O5 1 2.13255 0 0.158404 47.69 0.074279 2 SiO2 1 1.45677 0 0.172702 76.11 0.118552 3 Ta2O5 1 2.13255 0 0.172362 51.89 0.080825 4 SiO2 1 1.45677 0 0.157011 69.2 0.10778 5 Ta2O5 1 2.13255 0 0.163053 49.09 0.076459 6 SiO2 1 1.45677 0 0.193165 85.13 0.132598 7 Ta2O5 1 2.13255 0 0.178758 53.81 0.083824 8 SiO2 1 1.45677 0 0.192102 84.66 0.131869 9 Ta2O5 1 2.13255 0 0.254571 76.64 0.119374 10 SiO2 1 1.45677 0 0.197447 87.02 0.135538 11 Ta2O5 1 2.13255 0 0.131869 39.7 0.061836 12 SiO2 1 1.45677 0 0.171547 75.6 0.117758 13 Ta2O5 1 2.13255 0 0.192364 57.91 0.090204 14 SiO2 1 1.45677 0 0.189303 83.43 0.129948 15 Ta2O5 1 2.13255 0 0.123316 37.12 0.057826 16 SiO2 1 1.45677 0 0.167358 73.76 0.114883 17 Ta2O5 1 2.13255 0 0.252444 76 0.118377 18 SiO2 1 1.45677 0 0.303566 133.78 0.208383 19 Ta2O5 1 2.13255 0 0.161404 48.59 0.075686 20 SiO2 1 1.45677 0 0.167027 73.61 0.114656 21 Ta2O5 1 2.13255 0 0.20586 61.97 0.096533 22 SiO2 1 1.45677 0 0.316254 139.37 0.217093 23 Ta2O5 1 2.13255 0 0.170089 51.21 0.079759 24 SiO2 1 1.45677 0 0.147961 65.21 0.101568 25 Ta2O5 1 2.13255 0 0.154825 46.61 0.072601 26 SiO2 1 1.45677 0 0.175192 77.21 0.120261 27 Ta2O5 1 2.13255 0 0.359868 108.34 0.16875 28 SiO2 1 1.45677 0 0.221007 97.4 0.151711 29 Ta2O5 1 2.13255 0 0.238037 71.66 0.111621 30 SiO2 1 1.45677 0 0.184722 81.41 0.126803 31 Ta2O5 1 2.13255 0 0.1995 60.06 0.09355 32 SiO2 1 1.45677 0 0.224012 98.72 0.153773 33 Ta2O5 1 2.13255 0 0.313059 94.25 0.146801 34 SiO2 1 1.45677 0 0.229717 101.24 0.157689 35 Ta2O5 1 2.13255 0 0.185005 55.7 0.086753 36 SiO2 1 1.45677 0 0.197956 87.24 0.135887 37 Ta2O5 1 2.13255 0 0.251871 75.83 0.118108 38 SiO2 1 1.45677 0 0.264637 116.63 0.181661 39 Ta2O5 1 2.13255 0 0.256294 77.16 0.120182 40 SiO2 1 1.45677 0 0.212853 93.8 0.146113 41 Ta2O5 1 2.13255 0 0.343003 103.26 0.160842 42 SiO2 1 1.45677 0 0.151193 66.63 0.103787 43 Ta2O5 1 2.13255 0 0.210843 63.47 0.098869 44 SiO2 1 1.45677 0 0.345394 152.22 0.237096 45 Ta2O5 1 2.13255 0 0.322203 97 0.151088 46 SiO2 1 1.45677 0 0.236534 104.24 0.162369 47 Ta2O5 1 2.13255 0 0.368381 110.9 0.172743 48 SiO2 1 1.45677 0 0.099438 43.82 0.068259 49 Ta2O5 1 2.13255 0 0.369423 111.21 0.173231 50 SiO2 1 1.45677 0 0.128777 56.75 0.088399 51 Ta2O5 1 2.13255 0 0.386057 116.22 0.181031 52 SiO2 1 1.45677 0 0.182882 80.6 0.12554 53 Ta2O5 1 2.13255 0 0.411772 123.96 0.193089 54 SiO2 1 1.45677 0 0.196865 86.76 0.135138 55 Ta2O5 1 2.13255 0 0.433882 130.62 0.203457 56 SiO2 1 1.45677 0 0.223993 98.71 0.153761 57 Ta2O5 1 2.13255 0 0.4611 138.81 0.21622 58 SiO2 1 1.45677 0 0.162307 71.53 0.111416 59 Ta2O5 1 2.13255 0 0.173259 52.16 0.081245 60 SiO2 1 1.45677 0 0.177951 78.42 0.122155 61 Ta2O5 1 2.13255 0 0.393062 118.33 0.184316 62 SiO2 1 1.45677 0 0.216993 95.63 0.148955 63 Ta2O5 1 2.13255 0 0.330572 99.52 0.155013 64 SiO2 1 1.45677 0 0.295264 130.12 0.202685 65 Ta2O5 1 2.13255 0 0.366086 110.21 0.171666 66 SiO2 1 1.45677 0 0.323567 142.6 0.222113 67 Ta2O5 1 2.13255 0 0.360054 108.39 0.168838 68 SiO2 1 1.45677 0 0.297485 131.1 0.204209 69 Ta2O5 1 2.13255 0 0.368612 110.97 0.172851 70 SiO2 1 1.45677 0 0.281457 124.04 0.193207 71 Ta2O5 1 2.13255 0 0.389269 117.19 0.182537 72 SiO2 1 1.45677 0 0.304088 134.01 0.208742 73 Ta2O5 1 2.13255 0 0.361221 108.74 0.169385 74 SiO2 1 1.45677 0 0.293142 129.19 0.201227 75 Ta2O5 1 2.13255 0 0.331089 99.67 0.155255 76 SiO2 1 1.45677 0 0.348471 153.57 0.239209 77 Ta2O5 1 2.13255 0 0.364577 109.76 0.170959 78 SiO2 1 1.45677 0 0.270152 119.06 0.185447 79 Ta2O5 1 2.13255 0 0.343733 103.48 0.161184 80 SiO2 1 1.45677 0 0.210208 92.64 0.144297 81 Ta2O5 1 2.13255 0 0.370376 111.5 0.173678 82 SiO2 1 1.45677 0 0.31286 137.88 0.214763 Substrate BK 7 1.51481 0 Total Thickness 20.72609 7516.63 11.70814
TABLE-US-00002 TABLE 2 Design: ShortpassBackside of Filter Reference Wavelength (nm): 1087 Optical Physical Packing Refractive Extinction Thickness Thickness Geometric Layer Material Density Index Coefficient (FWOT) (nm) Thickness Medium Air 1 0 1 SiO2 1 1.44936 0 0.047158 35.37 0.032537 2 Ta2O5 1 2.1 0 0.328185 169.87 0.156279 3 SiO2 1 1.44936 0 0.332795 249.59 0.229615 4 Ta2O5 1 2.1 0 0.730083 377.9 0.347659 5 SiO2 1 1.44936 0 0.098316 73.74 0.067834 6 Ta2O5 1 2.1 0 0.257213 133.14 0.122482 7 SiO2 1 1.44936 0 0.393134 294.84 0.271246 8 Ta2O5 1 2.1 0 0.193938 100.39 0.092352 9 SiO2 1 1.44936 0 0.258145 193.61 0.178109 10 Ta2O5 1 2.1 0 0.278104 143.95 0.13243 11 SiO2 1 1.44936 0 0.286848 215.13 0.197913 12 Ta2O5 1 2.1 0 0.301028 155.82 0.143347 13 SiO2 1 1.44936 0 0.229139 171.85 0.158097 14 Ta2O5 1 2.1 0 0.216246 111.93 0.102975 15 SiO2 1 1.44936 0 0.276757 207.56 0.19095 16 Ta2O5 1 2.1 0 0.308741 159.81 0.147019 17 SiO2 1 1.44936 0 0.262161 196.62 0.18088 18 Ta2O5 1 2.1 0 0.237995 123.19 0.113331 19 SiO2 1 1.44936 0 0.254921 191.19 0.175885 20 Ta2O5 1 2.1 0 0.272837 141.23 0.129922 21 SiO2 1 1.44936 0 0.27954 209.65 0.192871 22 Ta2O5 1 2.1 0 0.280113 144.99 0.133387 23 SiO2 1 1.44936 0 0.258728 194.04 0.178511 24 Ta2O5 1 2.1 0 0.259037 134.08 0.123351 25 SiO2 1 1.44936 0 0.263278 197.45 0.181651 26 Ta2O5 1 2.1 0 0.280656 145.27 0.133646 27 SiO2 1 1.44936 0 0.363664 272.74 0.250913 28 Ta2O5 1 2.1 0 0.407393 210.87 0.193997 29 SiO2 1 1.44936 0 0.34872 261.53 0.240602 30 Ta2O5 1 2.1 0 0.295915 153.17 0.140912 31 SiO2 1 1.44936 0 0.296472 222.35 0.204553 32 Ta2O5 1 2.1 0 0.24109 124.79 0.114805 33 SiO2 1 1.44936 0 0.27017 202.62 0.186406 34 Ta2O5 1 2.1 0 0.288401 149.28 0.137334 35 SiO2 1 1.44936 0 0.329805 247.35 0.227552 36 Ta2O5 1 2.1 0 0.368275 190.63 0.175369 37 SiO2 1 1.44936 0 0.386659 289.99 0.266779 38 Ta2O5 1 2.1 0 0.329026 170.31 0.156679 39 SiO2 1 1.44936 0 0.319912 239.93 0.220726 40 Ta2O5 1 2.1 0 0.341577 176.81 0.162656 41 SiO2 1 1.44936 0 0.446073 334.55 0.307772 42 Ta2O5 1 2.1 0 0.325138 168.3 0.154828 43 SiO2 1 1.44936 0 0.336421 252.31 0.232116 44 Ta2O5 1 2.1 0 0.410089 212.27 0.195281 45 SiO2 1 1.44936 0 0.4317 323.77 0.297855 46 Ta2O5 1 2.1 0 0.354078 183.28 0.168609 47 SiO2 1 1.44936 0 0.372739 279.55 0.257174 48 Ta2O5 1 2.1 0 0.449103 232.46 0.213858 49 SiO2 1 1.44936 0 0.342776 257.08 0.236501 50 Ta2O5 1 2.1 0 0.328441 170.01 0.1564 51 SiO2 1 1.44936 0 0.371863 278.89 0.25657 52 Ta2O5 1 2.1 0 0.391052 202.42 0.186215 53 SiO2 1 1.44936 0 0.366632 274.97 0.252961 54 Ta2O5 1 2.1 0 0.362789 187.79 0.172757 55 SiO2 1 1.44936 0 0.289342 217 0.199634 Substrate BK 7 1.50636 0 Total Thickness 17.35041 10959.23 10.08209
[0098] The performance of the two-sided filter is shown in Transmittance Plot 1100 with x-axis 1103 for the wavelength range of 300 nm to 1800 nm and y-axis 1102 for transmittance in percent from 0 to 100%. There are 3 plot lines in Plot 1100: solid line 1104 representing the transmittance of the band-pass filter at 0 incidence angle, dashed line 1105 representing the transmittance of the band-pass filter at 12.5 and short long line 1106 representing the transmittance of the band-pass filter at 25. The overall bandwidth of the high transmission range of the two-sided filter of Table 1 and 2 is around 100 nm, with the high reflectance bandwidth going from 350 nm to 920 and 1050 to 1800 nm. The filter exhibits very little incidence angle shift as can be seen in the lateral displacement going from incidence angles of 0 to 25. The angle shift is low because the incidence angles are kept low on the filter but it is also a consequence of the design algorithm used, which is partly based on teachings in U.S. Pat. No. 7,859,754Wideband dichroic-filter design for LED-phosphor beam-combining.
[0099] In all of the above described configurations, if a large cover glass is used, and especially because the module can be thin, a dense honeycomb structure can be used between the glass and the mirror to provide stiffness.
[0100] Depending on the use, many of the configurations described above, especially when sky splitting or rotating mirrors is employed, have free areas surrounding the mirrors and within the enclosure. These free areas can be used for other purposes. A couple of examples are listed below.
[0101] The free area could be used to change the look of the CPV module. Currently, almost all CPV modules look grey. This limitation could be overcome by painting the mirrored part of the substrate which is not optically active nor has any function other than the enclosure.
[0102] The free area could be used to display an advertising logo. When the size of each concentrator unit is small, an image of the cell, with a size much bigger than a single unit aperture, can be seen when looking at the concentrator normal to the aperture (at a distance greater than a few meters). The image seen is a combination of the individual cells' images created by each concentrator unit. The angular size of this image is constant (and equal to the concentrator acceptance angle). In particular, it does not depend on the distance at which one looks at the module. This is why, the cell image occupies more and more concentrator units when we increase this distance. This effect can be used to create logos or advertisements whose size is adapted to the observer distance. The particular configuration of the CCF allows creating these images for the solid angle occupied by common observers during normal operation of the CPV array. These images are created from features printed on the free area of the substrate supporting the mirror. Additionally, we can use other effects such as the Moire Effect.
[0103] There are some disadvantages in the CCF design; however; as will be shown below, these are minimal and can be overcome by novel solutions.
[0104] The heat spreader and MJ cell block part of the incoming radiation. For an FK concentrator with C.sub.g=1024, and with an acceptance angle of 1.1 deg, only 1.8% of the aperture area is blocked. This is not a significant amount and is not a major drawback.
[0105]
[0106] The mirror is not a perfect reflector and some energy will be lost. All HCPV systems have optical losses. Inexpensive mirrors with efficiencies above 96% for the spectrum of interest are available. This includes conventional 2nd surface flat mirror on glass, to high reflectance solar reflective films (http:/ /solutions.3m.com/wps/portal/3M/en_US /Renewable/Energy/Product/Films/Solar_Mirror/.
[0107] A solution is to use total internal reflectors made of V grooves. In the case of FK architectures, the V grooves should be in the radial symmetry with respect to the symmetry axis of each one of the POE quadrants. The principle is taught in US Publication 2010-0002320-A1 by several of the same inventors.
[0108] For spectrum splitting, a dichroic or other frequency selective mirror is required and these can be expensive, especially if a custom design is needed. All-polymeric solutions are available, such as 3M Cool Mirror film, and one of these could be a good fit. 3M, and others, could also adapt an inexpensive design to fit the requirements of the new systems.
[0109] The heat load that can be adequately dissipated by the cover glass in the CFSC design is low so this design works most effectively with small solar cells. This can be seen as a disadvantage, but the combined advantages of the system have distinct advantages in many applications.
[0110]
[0111]
[0112]
[0113]
[0114]
[0115]
[0116] Based on the above analysis the best architecture for the CCF of the six in
[0117]
[0118]
[0119] The mirror 113, 203, etc., and other structures associated with the mirror are omitted from
[0120] The top heat spreader 1301 is not provided with any metallic connection through the cover plate 1303. The cover plate 1303 is uninterrupted, in the interests of mechanical integrity and weather-tightness. Surprisingly, enough heat can be conducted from the lower or back heat spreader 1302 through the glass to the top or front heat spreader 1301 for the top heat spreader to be useful. The top heat spreader can conduct the heat that it receives from the bottom heat spreader 1302 radially outwards, and can either dissipate that heat directly to the ambient environment by radiation or by conduction/convection into the atmosphere, or can return the heat to the outer surface of the glass cover plate 1303 for similar dissipation. This arrangement is valuable in some embodiments, where the thickness of the lower heat spreader 1302 (and therefore its ability to conduct heat) is limited because it is desirable to embed the lower heat spreader 1302 completely in the silicone molding of the primary lens 109a, etc., and it is desirable to keep the primary lens 109a, etc. thin, because silicone is both expensive and not perfectly transparent.
[0121] In embodiments (see
[0122] As illustrated in
[0123] The top heat spreader 1301 is not involved in the electrical circuitry, because it is isolated by the glass cover 1303, but may be identical to the bottom heat spreader 1302, so that only one silk-screening mask is needed. Because the heat is transferred vertically through the glass from the bottom heat spreader 1302, the isolating gap between the sections corresponding to the gap between sections 1302A and 1302B does not significantly detract from the performance of the heat spreader.
[0124] It will be appreciated that a heat spreader on only one surface of the glass plate 1303 may be used. However, because the width of the arms of the heat spreader may be limited, in order to avoid blocking too much of the incoming sunlight, that may require a thicker heat spreader to provide sufficient heat conduction. As noted above, there are advantages to a thin heat spreader. In particular, if a thick heat spreader, more similar to those in our earlier WO 2011/066286, is used on the underside of the glass, care may be needed to ensure that the optic is molded without distortions or bubbles.
[0125] The embodiments have been shown in the drawings with the direction from which incident light is expected to arrive upwards, and that direction has been variously referred to as up and front. These and other expressions of orientation or direction are not limiting. The HCPV devices, when used as solar concentrators, will preferably be oriented with that direction towards the sun, which depends on geographical location and time of day and year. When used for other purposes, the devices may be in other orientations. When not in use, the devices may be parked, stored, and shipped in any convenient orientation.
[0126] Various embodiments have been described, and various ways in which features of different embodiments may be combined have been mentioned. However, the skilled reader will see how other features of the described embodiments may be combined, and other ways in which the embodiments may be modified.
[0127] The preceding description of the presently contemplated best mode of practicing the invention is therefore not to be taken in a limiting sense, but is made merely for the purpose of describing the general principles of the invention. The full scope of the invention should be determined with reference to the Claims.