Manufacturing method for current sensor and current sensor
09702909 ยท 2017-07-11
Assignee
Inventors
Cpc classification
H03F2203/45528
ELECTRICITY
H03F1/30
ELECTRICITY
H03F2200/411
ELECTRICITY
H03F2200/261
ELECTRICITY
Y10T29/4902
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
G01R15/207
PHYSICS
H03F2200/228
ELECTRICITY
G01R35/00
PHYSICS
G01R3/00
PHYSICS
G01R1/30
PHYSICS
International classification
G01R35/00
PHYSICS
G01R3/00
PHYSICS
G01R15/20
PHYSICS
G01R1/30
PHYSICS
Abstract
A manufacturing method is used for a current sensor including a current measurement circuit configured to include magnetoelectric conversion elements, a first amplification-and-correction circuit configured to amplify an output of the current measurement circuit and correct, based on a set first correction amount, a temperature characteristic of an offset, a second amplification-and-correction circuit configured to amplify an output of the first amplification-and-correction circuit, adjust a sensitivity, and correct, based on a set second correction amount, a magnitude of the offset, and a substrate in which the current measurement circuit, the first amplification-and-correction circuit, and the second amplification-and-correction circuit are provided, wherein after the first correction amount is set based on characteristics of the magnetoelectric conversion elements, the magnetoelectric conversion elements are mounted in the substrate and the second correction amount is set.
Claims
1. A method for manufacturing a current sensor including a current measurement circuit including magnetoelectric conversion elements, a first amplification-and-correction circuit configured to amplify an output of the current measurement circuit and correct, based on a first correction amount, a temperature characteristic of an offset, a second amplification-and-correction circuit configured to amplify an output of the first amplification-and-correction circuit so as to adjust a sensitivity, and correct, based on a second correction amount, a magnitude of the offset, and a substrate on which the current measurement circuit, the first amplification-and-correction circuit, and the second amplification-and-correction circuit are provided, the method comprising: setting the first correction amount based on characteristics of a sample magnetoelectric conversion element taken from a same lot or wafer from which the magnetoelectric conversion elements are obtained; mounting the magnetoelectric conversion elements on the substrate after the setting the first correction amount; and setting the second correction amount after the mounting.
2. The method for manufacturing a current sensor according to claim 1, wherein the first correction amount is set so as to reduce temperature dependency of the offset.
3. The method for manufacturing a current sensor according to claim 1, wherein each of the magnetoelectric conversion elements is a magnetoresistance effect element.
4. The method for manufacturing a current sensor according to claim 1, wherein the current sensor is a magnetic proportional type sensor utilizing the output of the current measurement circuit proportional to an external magnetic field.
5. The method for manufacturing a current sensor according to claim 1, wherein the current sensor is a differential type sensor including another set of the current measurement circuit and the first amplification-and-correction circuit, the second amplification-and-correction circuit performing a differential operation on outputs of the current measurement circuits.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1)
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(3)
(4)
(5)
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(8)
(9)
(10)
(11)
(12)
DESCRIPTION OF THE PREFERRED EMBODIMENTS
(13) The reason why a process for adjusting an offset (the deviation of a sensor output from a reference value when a current to be measured is 0 A) is complicated in a current sensor of the related art is that it is necessary to variously change a condition for sensing of a current sensor and actually measure a temperature characteristic at each condition. The present inventor focuses attention on this point, and finds out that a circuit for reducing the temperature dependency of the offset and a circuit for correcting the magnitude (absolute value) of the offset are separately provided, correction of the temperature characteristic of the offset and correction of the magnitude of the offset are isolated from each other, and thus, it is possible to achieve high current measurement accuracy by simple adjustment.
(14) In other words, an outline of the present invention is to separately provide a first amplification-and-correction circuit configured to correct the temperature characteristic of the offset and a second amplification-and-correction circuit configured to correct the magnitude of the offset. According to this configuration, it is possible to reduce the temperature dependency of the offset by the first amplification-and-correction circuit, and to correct the magnitude of the offset by the second amplification-and-correction circuit, in a state in which the temperature dependency is reduced. Therefore, it is unnecessary to actually measure the temperature characteristic under many conditions, and it is possible to achieve high current measurement accuracy by simple adjustment. Hereinafter, a current sensor of the present invention and a manufacturing method therefor will be described with reference to accompanying drawings.
First Embodiment
(15)
(16)
(17) In the current measurement circuit 11, a connection point between the magnetoresistance effect elements M1 and M3 is connected to a terminal T1, and a power supply configured to supply a power-supply voltage is connected to the terminal T1. In addition, a connection point between the magnetoresistance effect elements M2 and M4 is connected to a terminal T2, and a ground configured to supply a ground voltage is connected to the terminal T2. A connection point between the magnetoresistance effect elements M1 and M2 is connected to an output terminal O1 of the current measurement circuit 11, and a connection point between the magnetoresistance effect elements M3 and M4 is connected to an output terminal O2 of the current measurement circuit 11. A voltage difference occurring between these two output terminals O1 and O2 fluctuates in response to the magnetic field applied to the current measurement circuit 11, and is sent to a subsequent stage, as the output of the current measurement circuit 11.
(18) The two output terminals O1 and O2 of the current measurement circuit 11 are connected to the non-inverting input terminal (+) and inverting input terminal () of an operational amplifier 121, respectively, included in the amplification-and-correction circuit 12. A correction circuit 122 used for correcting the output of the current measurement circuit 11 is connected to the operational amplifier 121. The correction circuit 122 outputs a correction voltage (a first correction voltage V.sub.1) in accordance with a set correction amount (a first correction amount), and the operational amplifier 121 corrects the output of the current measurement circuit 11 in accordance with the first correction voltage V.sub.1 supplied from the correction circuit 122. In addition, the amplification-and-correction circuit 12 has an amplification function, and the output of the current measurement circuit 11 is amplified with a predetermined amplification factor.
(19) Specifically, in accordance with the first correction voltage V.sub.1 supplied from the correction circuit 122, the operational amplifier 121 may add, to the output of the current measurement circuit 11, such a correction offset as to reduce the influence of the temperature dependency of an offset due to the current measurement circuit 11.
(20) As illustrated in
(21) An output terminal of the amplification-and-correction circuit 12 (an output terminal of the operational amplifier 121) is connected to an input terminal of an operational amplifier 131 included in the amplification-and-correction circuit 13. A correction circuit 132 used for correcting the output of the amplification-and-correction circuit 12, adjusting a sensitivity, and correcting the magnitude of an offset is connected to the operational amplifier 131. The correction circuit 132 outputs a correction voltage (a second correction voltage V.sub.2) and a correction signal (a correction signal S) in accordance with a set correction amount (a second correction amount, a third correction amount), and the operational amplifier 131 corrects an output in accordance with the second correction voltage V.sub.2 and the correction signal S, supplied from the correction circuit 132.
(22) Specifically, the operational amplifier 131 corrects the magnitude of the offset in accordance with the second correction voltage V.sub.2 supplied from the correction circuit 132, and corrects a sensitivity (an amplification factor) in accordance with the correction signal S supplied from the correction circuit 132. The operational amplifier 131 is configured so that the output thereof is not dependent on temperature (so as not to have a temperature characteristic). From this, in the amplification-and-correction circuit 13, it is possible to only correct the magnitude of the offset and the sensitivity without changing a temperature characteristic. The output of the amplification-and-correction circuit 13 (the output of the operational amplifier 131) after correction is the output of the current sensor 1.
(23) Next, a manufacturing method for the current sensor 1 will be described. The magnetoresistance effect elements M1 to M4 for configuring the current measurement circuit 11 are mounted in a substrate (not illustrated) in which the amplification-and-correction circuits 12 and 13 are mounted, and thus, the current sensor 1 is manufactured. The magnetoresistance effect elements M1 to M4 each have an individual characteristic variation. In the manufacturing method of the present embodiment, in order to correct the temperature characteristic of an offset due to the characteristic variations, the first correction amount is set in the amplification-and-correction circuit 12 (the correction circuit 122) before mounting of the magnetoresistance effect elements M1 to M4. The first correction amount may be set based on the temperature characteristics of the magnetoresistance effect elements M1 to M4 and so forth.
(24) An example of a calculation method for the first correction amount set in the amplification-and-correction circuit 12 will be described.
(25) In the current sensor 1, the offset of V.sub.out has a temperature characteristic. If it is assumed that temperature is T ( C.), the temperature characteristic (the primary coefficient of temperature) of V.sub.ofs is a (1/ C.), and the temperature characteristic (the primary coefficient of temperature) of V.sub.trim is (1/ C.), the offset of V.sub.out may be expressed by the primary expression of temperature. If a condition where the offset of V.sub.out becomes zero at room temperature (here, 25 C.) and a condition where the temperature characteristic becomes a minimum at temperature T are applied, a relationship between the correction offset V.sub.trim.sub._.sub.min of the amplification-and-correction circuit 12 necessary to minimize the temperature characteristic of the offset of V.sub.out and the correction offset V.sub.trim.sub._.sub.RT of the amplification-and-correction circuit 12 necessary to zero the offset of V.sub.out at room temperature is expressed as, for example, the following Expression (1).
(26)
(27) A method for obtaining individual parameters on the right side of the above-mentioned Expression (1) will be described.
(28)
(29) In this way, from the characteristics of the magnetoresistance effect elements M1 to M4, the operational amplifier 121, and so forth, acquirable in advance, and the above-mentioned Expression (1), it is possible to calculate the correction offset V.sub.trim.sub._.sub.min of the amplification-and-correction circuit 12 necessary to minimize the temperature characteristic of the offset. Therefore, such a first correction amount as to generate the first correction voltage V.sub.1 corresponding to the correction offset V.sub.trim.sub._.sub.min is set in the amplification-and-correction circuit 12 (the correction circuit 122) before mounting of the magnetoresistance effect elements M1 to M4, and thus, it is possible to easily reduce the temperature dependency of the offset.
(30) The characteristic variations of the magnetoresistance effect elements M1 to M4 within a same lot or a same wafer are small. Therefore, if the characteristic of a typical sample is acquired in advance, the characteristic may be used in common at the time of adjusting another current sensor 1. From this, it is unnecessary to actually measure the temperature characteristics of all the magnetoresistance effect elements M1 to M4 for each current sensor. Therefore, it is possible to further simplify adjustment.
(31) After the first correction amount is set in the amplification-and-correction circuit 12, the magnetoresistance effect elements M1 to M4 to configure the current measurement circuit 11 are mounted in a substrate. In this state, the temperature dependency of the offset is minimized. Therefore, it is possible to set the second correction amount and the third correction amount in the amplification-and-correction circuit 13 by simple measurement. As illustrated in, for example,
(32) In this way, in the current sensor 1 and the manufacturing method therefor of the present embodiment, the first amplification-and-correction circuit 12 configured to correct the temperature characteristic of an offset and the second amplification-and-correction circuit 13 configured to correct the magnitude of the offset are separately provided, and after the first correction amount is set in the first amplification-and-correction circuit 12, based on the characteristics of the magnetoelectric conversion elements M1 to M4, and the temperature characteristic of the offset is corrected, the second correction amount is set in the second amplification-and-correction circuit 13 and the magnitude of the offset is corrected. Therefore, it is possible to perform correction of the temperature characteristic of the offset and correction of the magnitude of the offset in an isolated manner. From this, it is unnecessary to acquire temperature characteristics under many conditions, and it is possible to achieve high current measurement accuracy by simple adjustment.
(33) In addition, in the current sensor 1 and the manufacturing method therefor of the present embodiment, the first correction amount of the first amplification-and-correction circuit 12 may be set so that the influence of the temperature characteristic of the offset becomes small. Therefore, it is possible to adequately remove the influence of the temperature characteristic of the offset. In addition, the current sensor 1 may be a magnetic proportional type utilizing the output of the current measurement circuit 11 proportional to an external magnetic field. Therefore, it is possible to adjust the offset by simple correction processing utilizing the above-mentioned Expression (1).
(34) In addition, while, in the present embodiment, after the first correction amount is set in the amplification-and-correction circuit 12, based on the characteristics of the magnetoelectric conversion elements M1 to M4, the magnetoresistance effect elements M1 to M4 to configure the current measurement circuit 11 are mounted in a substrate and the second correction amount is set in the second amplification-and-correction circuit 13, the manufacturing method for the current sensor 1 is not limited to this. After mounting the magnetoresistance effect elements (magnetoelectric conversion elements) M1 to M4 in the substrate, the first correction amount of the first amplification-and-correction circuit 12 and the second correction amount of the second amplification-and-correction circuit 13 may be set.
(35)
Second Embodiment
(36) In the present embodiment, a current sensor having a form different from the above-mentioned embodiment will be described.
(37) As illustrated in
(38) An I/V amplifier 22 that converts the feedback current into a voltage is connected to the feedback coil 21. The I/V amplifier 22 is configured to include an operational amplifier 221, and an inverting input terminal () thereof is connected to the feedback coil 21. A reference voltage is applied to a non-inverting input terminal (+) of the operational amplifier 221. An output terminal of the operational amplifier 221 is connected to the inverting input terminal () of the operational amplifier 221 through a resistance element 222. In addition, the output terminal of the operational amplifier 221 is connected to the amplification-and-correction circuit (the second amplification-and-correction circuit) 13.
(39) The current sensor 2 of the present embodiment is manufactured in the same method as that of the current sensor 1. In other words, the magnetoresistance effect elements M1 to M4 to configure the current measurement circuit 11 are mounted in a substrate (not illustrated) in which the amplification-and-correction circuits 12 and 13 are mounted, and thus, the current sensor 2 is manufactured. In the present embodiment, before mounting of the magnetoresistance effect elements M1 to M4, the first correction amount is set in the amplification-and-correction circuit 12 (the correction circuit 122). The first correction amount may be set based on the temperature characteristics of the magnetoresistance effect elements M1 to M4 and so forth.
(40) An example of a calculation method for the first correction amount set in the amplification-and-correction circuit 12 will be described.
(41) In the current sensor 2, the offset of V.sub.out has a temperature characteristic. If it is assumed that temperature is T ( C.), the temperature characteristic of V.sub.ofs is a (1/ C.), the temperature characteristic of V.sub.trim is (1/ C.), the temperature characteristic of the sensitivity of the current measurement circuit 11 is (1/ C.), and the temperature characteristic of the sensitivity caused by a magnetic balance type is (1/ C.), the offset of V.sub.out may be expressed by the primary expression of temperature. If a condition where the offset of V.sub.out becomes zero at room temperature (here, 25 C.) and a condition where the temperature characteristic becomes a minimum at temperature T are applied, a relationship between the correction offset V.sub.trim.sub._.sub.min of the amplification-and-correction circuit 12 necessary to minimize the temperature characteristic of the offset of V.sub.out and the correction offset V.sub.trim.sub._.sub.RT of the amplification-and-correction circuit 12 necessary to zero the offset at room temperature is expressed as, for example, the following Expression (2).
(42)
(43) Based on the above-mentioned Expression (2), it is possible to calculate the correction offset V.sub.trim.sub._.sub.min of the amplification-and-correction circuit 12 necessary to minimize the temperature characteristic of the offset, from various kinds of characteristics acquirable in advance. Therefore, such a first correction amount as to generate the first correction voltage V.sub.1 corresponding to the correction offset V.sub.trim.sub._.sub.min is set in the amplification-and-correction circuit 12 (the correction circuit 122) before mounting of the magnetoresistance effect elements M1 to M4, and thus, it is possible to easily reduce the temperature dependency of the offset.
(44) After the first correction amount is set in the amplification-and-correction circuit 12, the magnetoresistance effect elements M1 to M4 to configure the current measurement circuit 11 are mounted in the substrate. In this state, the temperature dependency of the offset is minimized. Therefore, it is possible to set the second correction amount and the third correction amount in the amplification-and-correction circuit 13 by simple measurement. If the second correction amount and the third correction amount are set in the amplification-and-correction circuit 13, the current sensor 2 is completed.
(45) In this way, in the current sensor 2 of the present embodiment, the first amplification-and-correction circuit 12 configured to correct the temperature characteristic of an offset and the second amplification-and-correction circuit 13 configured to correct the magnitude of the offset are separately provided, and after the first correction amount is set in the first amplification-and-correction circuit 12, based on the characteristics of the magnetoelectric conversion elements M1 to M4, and the temperature characteristic of the offset is corrected, the second correction amount is set in the second amplification-and-correction circuit 13 and the magnitude of the offset is corrected. Therefore, it is possible to perform correction of the temperature characteristic of the offset and correction of the magnitude of the offset in an isolated manner. From this, it is unnecessary to acquire temperature characteristics under many conditions, and it is possible to achieve high current measurement accuracy by simple adjustment. The configuration or the method illustrated in the present embodiment may be implemented by being arbitrarily combined with a configuration or a method illustrated in another embodiment.
Third Embodiment
(46) In the present embodiment, a current sensor having a form different from the above-mentioned embodiments will be described.
(47) As illustrated in
(48) In the amplification-and-correction circuits 12a and 12b, the output terminals of operational amplifiers 121a and 121b are connected to the non-inverting input terminal (+) and the inverting input terminal () of the operational amplifier 131, respectively. The amplification-and-correction circuit 13 calculates a difference between an output V.sub.a of the amplification-and-correction circuit 12a and an output V.sub.b of the amplification-and-correction circuit 12b, and corrects the magnitude of an offset and a sensitivity.
(49) In such a differential type current sensor 3, by performing correction so that the temperature characteristics of offsets become equal to each other in the amplification-and-correction circuits 12a and 12b, it is possible to cancel out the temperature characteristics of offsets.
(50) The temperature characteristics of offsets generated in the current measurement circuits 11a and 11b are corrected in the amplification-and-correction circuits 12a and 12b so as to become equal to each other, and thus, it is possible to cancel out the temperature characteristics of offsets. In other words, the current sensor 3 may be put into a differential type utilizing the current measurement circuits 11a and 11b, and thus, it is possible to cancel out the temperature characteristics of offsets and achieve high current measurement accuracy.
(51) In addition, since, in the current sensor 3 of the present embodiment, it is possible to cancel out the temperature characteristics of offsets, it is not necessary to minimize the temperature characteristics of offsets in the amplification-and-correction circuits 12a and 12b. The configuration or the method illustrated in the present embodiment may be implemented by being arbitrarily combined with a configuration or a method illustrated in another embodiment.
(52) As described above, in the current sensors 1, 2, and 3 and the manufacturing methods therefor of the present invention, the amplification-and-correction circuits (the first amplification-and-correction circuit) 12, 12a, and 12b that each correct the temperature characteristic of an offset and the amplification-and-correction circuit (the second amplification-and-correction circuit) 13 that corrects the magnitude of the offset are separately provided, and after the first correction amount is set in each of the amplification-and-correction circuits 12, 12a, and 12b, based on the characteristics of the magnetoelectric conversion elements, and the temperature characteristic of the offset is corrected, the second correction amount is set in the amplification-and-correction circuit 13 and the magnitude of the offset is corrected. Therefore, it is possible to perform correction of the temperature characteristic of the offset and correction of the magnitude of the offset in an isolated manner. From this, it is unnecessary to acquire temperature characteristics under many conditions, and it is possible to achieve high current measurement accuracy by simple adjustment.
(53) In addition, while, in each of the above-mentioned embodiments, the current sensor in which the bridge circuit configuring the current measurement circuit is configured using the four magnetoresistance effect elements is exemplified, the bridge circuit may be configured to include a fixed resistance element or the like, whose resistance value is not caused to change by an external magnetic field. In addition, if being capable of detecting an induction magnetic field, the current measurement circuit may be a circuit other than the bridge circuit.
(54) In addition, a connection relationship between individual elements, the sizes thereof, and so forth in the above-mentioned embodiments may be modified without changing the spirit of the invention. In addition, the configurations, the methods, and so forth illustrated in the above-mentioned embodiments may be implemented with being arbitrarily combined. In addition to this, the present invention may be modified and implemented without departing from the scope of the invention.
(55) An current sensor of the present invention may be used for sensing the magnitude of a motor driving current of, for example, an electric vehicle, a hybrid vehicle, or the like.