Package structure including a cavity coupled to an injection gas channel composed of a permeable material

Abstract

A packing structure including: a cap secured to at least one first substrate and forming at least one cavity between the cap and the first substrate; a layer of at least one first material permeable to a gas, arranged in the cap and/or in the first substrate and/or at the interface between the cap and the first substrate, and forming at least one part of a wall of the cavity; a portion of at least one second material non-permeable to said gas, the thickness of which is higher than or equal to that of the layer of the first material, and surrounding at least one first part of the layer of the first material forming said part of the wall of the cavity; an aperture passing through the cap or the first substrate and opening onto or into said part of the layer of the first material.

Claims

1. A packaging structure comprising: a cap secured to at least one first substrate and forming at least one cavity between the cap and the first substrate; a layer of at least one first material permeable to a gas, arranged in the cap and/or in the first substrate and/or at an interface between the cap and the first substrate, and forming at least one part of a wall of the cavity; a portion of at least one second material non-permeable to said gas, the thickness of which is higher than or equal to that of the layer of the first material, and surrounding at least one first part of the layer of the first material forming said part of the wall of the cavity; and an aperture passing through the cap or the first substrate and opening onto or into said part of the layer of the first material.

2. The packaging structure according to claim 1, wherein said part of the layer of the first material surrounds the cavity.

3. The packaging structure according to claim 1, further including at least one micro-device arranged in the cavity.

4. The packaging structure according to claim 1, wherein the second material is a metal.

5. The packaging structure according to claim 1, wherein the first material includes at least one of the following elements: semiconductor oxide, semiconductor nitride, and glass.

6. The packaging structure according to claim 1, wherein at least one part of the portion of the second material is surrounded by a second part of the layer of the first material.

7. The packaging structure according to claim 1, wherein the cap includes at least one second substrate.

8. The packaging structure according to claim 7, wherein the layer of the first material and the portion of the second material are arranged at an interface between the first substrate and the second substrate.

9. The packaging structure according to claim 1, wherein the layer of the first material is arranged between a support layer of the first substrate and an upper layer of the first substrate.

10. The packaging structure according to claim 3, wherein the layer of the first material is arranged between a support layer of the first substrate and an upper layer of the first substrate, wherein the upper layer of the first substrate is a semiconductor layer in which the micro-device is made.

11. The packaging structure according to claim 10, wherein the second material corresponds to a semiconductor similar to that of the upper layer of the first substrate.

12. The packaging structure according to claim 1, wherein the first substrate is of an SOI-type and the layer of the first material corresponds to the insulating layer of the first substrate.

13. The packaging structure according to claim 1, further comprising at least one plugging material arranged on and/or in the aperture such that the cavity is hermetically closed.

14. The packaging structure according to claim 13, wherein the aperture passes through said part of the layer of the first material and opens onto a portion of electrically conducting material, and the plugging material corresponds to an electrically conducting layer arranged at least in the aperture and electrically connecting the portion of the electrically conducting material to an electrical contact arranged outside the aperture.

15. The packaging structure according to claim 1, further comprising several cavities formed between the cap and the first substrate and arranged adjacent to each other, wherein at least one dimension of each of the parts of the layer of the first material forming the parts of the wall of at least two of the cavities is different for each of said at least two of said cavities and/or wherein a dimension of a cross-section of the aperture associated with each of at least two of the cavities is different.

16. The packaging structure according to claim 15, wherein the portions of the second material surrounding each of the parts of the layer of the first material forming the part of the wall of each of the cavities are distinct from each other.

17. A method for manufacturing a packaging structure, the method comprising: making at least one cap and at least one first substrate for being secured to each other by forming at least one cavity between the cap and the first substrate; making a layer of at least one first material permeable to at least one gas, arranged in the cap and/or in the first substrate and/or at an interface between the cap and the first substrate, and for forming at least one part of a wall of the cavity; making at least one portion of at least one second material non-permeable to said gas, the thickness of which is higher than or equal to that of the layer of the first material, and surrounding at least one first part of the layer of the first material for forming said part of the wall of the cavity; securing the cap to the first substrate, forming the cavity; and making at least one aperture passing through the cap or the first substrate and opening onto or into said part of the layer of the first material.

18. The manufacturing method according to claim 17, further comprising, after the making of the aperture, injecting said gas into the cavity through the aperture and said part of the layer of the first material, and then hermetically closing the cavity by forming at least one plugging material on and/or in the aperture.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) The present invention will be better understood upon reading the description of exemplary embodiments given by way of purely indicating and in no way limiting purposes with reference to the appended drawings in which:

(2) FIG. 1 to show a packaging structure according to a first embodiment;

(3) FIG. 4 shows a part of a packaging structure according to an alternative of the first embodiment;

(4) FIGS. 5A to 5I show the steps of a method for manufacturing the packaging structure according to the first embodiment;

(5) FIGS. 6A to 6K show the steps of a method for manufacturing a packaging structure according to a second embodiment;

(6) FIGS. 7A to 7E show a part of the steps of the method for manufacturing the packaging structure according to the second embodiment.

(7) Identical, similar or equivalent parts of the different figures described hereinafter bear the same reference numerals so as to facilitate switching from one figure to the other.

(8) The different parts shown in the figures are not necessarily drawn to a uniform scale, to make the figure more understandable.

(9) The different possibilities (alternatives and embodiments) should be understood as being non-mutually exclusive and can be combined to each other.

DETAILED DISCLOSURE OF PARTICULAR EMBODIMENTS

(10) FIG. 1 is first referred to which shows a cross-section view of a profile of a packaging structure 100 according to a first embodiment.

(11) The packaging structure 100 is herein formed by assembling a first substrate 102 with a second substrate 104. Both these substrates 102 and 104 each include a material non-permeable to a gas, advantageously a noble gas (corresponding to one type of noble gas or a mixture of different types of noble gases) to be injected in cavities of the structure 100, for example a semiconductor such as silicon.

(12) One or more micro-devices 106 are made in and/or on the first substrate 102 which is used as a support for these micro-devices 106. In the example of FIG. 1, three micro-devices 106.1, 106.2 and 106.3 are made at a front face of the first substrate 102. The micro-devices 106 are each packaged in a cavity 108 (referenced 108.1, 108.2 and 108.3 in FIG. 1 respectively for each of the micro-devices 106.1, 106.2 and 106.3) formed between both substrates 102, 104. In this first embodiment, the cavities 108 are formed in a thickness part of the second substrate 104 which forms the cap of the structure 100.

(13) The substrates 102 and 104 are secured to each other. A layer 110 is arranged at the interface between the substrates 102 and 104, at the periphery of the cavities 108. This layer 110 is formed by at least one first material which is permeable to a gas, such as helium and/or argon, intended to be injected in the cavities 108. The first material includes for example SiO.sub.2 and/or one or more components derived from SiO.sub.2 such as SiON or SiOC, deposited as a thin layer, for example with a thickness between about 10 nm and 10 m. The layer 110 may also include silicon nitride and/or glass.

(14) A portion 112 of at least one second material non-permeable to the gas intended to be injected in the cavities 108 is formed in the layer 110. Here, the upper faces of the portion 112 and of the layer 110 form a continuous surface, and the lower faces of the portion 112 and of the layer 110 also form a continuous surface. This portion 112 is made here as a bead surrounding each of the cavities 108. The portion 112 is for example formed by one or more superimposed metal layers, for example of titanium and/or aluminium and/or copper and/or gold and/or germanium. The thickness of the portion 112 is higher than or equal (equal in the example of FIG. 1) to that of the layer 110, and for example between about 0.2 m and 10 m. Thus, because the materials of the substrates 102 and 104 and of the portion 112 are non-permeable to the gas intended to be injected in the cavities 108, the atmospheres of the cavities 108 are well insulated from each other by the materials. Without the presence of the portion 112, the atmospheres of the cavities 108 would communicate with each other through the material of the layer 110 which is permeable to the injected gas. FIG. 2 shows a top cross-section view of the layer 110 and of the portion 112.

(15) In order to enable the gas to be injected in the cavities 108, apertures 114 are formed through the second substrate 104, at the side walls of the cavities 108. The apertures 114 have for example here, in the plane parallel to the front face of the first substrate 102, circular-shaped cross-sections. The apertures 114 are preferably extended through the layer 110. Each of the apertures 114 is made such that it opens onto or into a part of the layer 110 which is delimited by the portion 112 and which communicates with one of the cavities 108. In the examples of FIGS. 1 and 2, a first aperture 114.1 is made such that it opens into a part 116.1 of the layer 110 which is delimited by the portion 112 and which communicates with the first cavity 108.1. Thus, the gas injected in the first aperture 114.1 passes through this part 116.1 of the layer 110 which separates the first aperture 114.1 from the first cavity 108.1. A second aperture 114.2 is made such that it opens into a part 116.2 of the layer 110 which is delimited by the portion 112 and which communicates with the second cavity 118.2. Thus, the gas injected in the second aperture 114.2 passes through this part 116.2 of the layer 110 which separates the second aperture 114.2 from the second cavity 118.2. Finally, for the third cavity 108.3, no aperture is herein formed to open onto or into a part of the layer 110 communicating with the third cavity 108.3.

(16) In the example of FIG. 1, the portion 112 is surrounded by a second part of the layer 110 corresponding to the external part of the layer 110.

(17) The amount of injected gas in each cavity 108 depends on several parameters: the dimensions (for example the diameter in the case of an aperture having a circular cross-section) of the cross-section of the aperture 114 associated with the cavity; the dimensions of the part 116 of the layer 110 of permeable material located between the aperture 114 and the cavity 108, that is the length (dimension along the axis X in FIGS. 1 and 2) and the cross-section (widththickness) of the portion of permeable material through which the gas has to pass before ending in the cavity 108; the gas injection parameters, that is the pressure with which the gas is injected as well as the duration of this gas injection.

(18) In the example of FIGS. 1 and 2, the apertures 114.1 and 114.2 have substantially similar diameters. Furthermore, the gas injection is simultaneously made in the cavities 108.2 and 108.2 during a same step by arranging the packaging structure 100 in an enclosure in which a gas is present at a certain pressure, for example between about 0.5 bar and 10 bars, and for a duration defined as a function of the pressure in the enclosure and the desired pressure in the cavities, for example between about a few minutes and a few hours. Further, because the thickness of the layer 110 is substantially constant at the entire packaging structure 100, the cross-sections of the parts 116.1 and 116.2 of the layer 110 through which the gas passes to end in the cavities 108.1 and 108.2 are the same. On the other hand, the apertures 114.1 and 114.2 are made at different distances from the cavities 108.2 and 108.2. Thus, the length of the part 116.1 of the layer 110 through which the gas passes to end in the first cavity 108.1 is lower than that through which this gas passes to end in the second cavity 108.2, which results, after the implementation of the gas injection step, in a residual pressure of this gas in the first cavity 108.1 higher than that in the second cavity 108.2.

(19) After this step of injecting gas in the cavities 108.1 and 108.2, these cavities are hermetically closed again by plugging the apertures 114.1 and 114.2 via depositing a plugging material, herein as a layer 118, at least in the apertures 114.1 and 114.2, the thickness of the layer 118 being here advantageously higher than or equal to the thickness of the layer 110 such that the parts 116.1 and 116.2 of the layer 110 through which the gas has been injected in the cavities 108.1 and 108.2 are no longer in contact with the atmosphere external to the cavities 108.1 and 108.2. In the case of a plugging material 118 conformably deposited into the apertures 114, the thickness of this plugging material 118 can be low and in particular lower than the thickness of the layer 110 because such a conform deposition enables the walls of the apertures 114 to be covered for making the cavities 108 hermetic without necessarily filling the apertures 114. When the apertures 114 are made through a part of the thickness of the layer 110, the plugging layer 118 is then made with a thickness higher than or equal to that of this part of the thickness of the layer 110. Finally, if the apertures 114 are made such that they open onto the layer 110 without passing through it, then the thickness of the plugging layer 118 is chosen at least equal to the minimum thickness ensuring a hermetic closure of the apertures 114, this minimum thickness depending in particular on the material(s) used for making the layer 118. In the example of FIG. 3, the layer 118 is deposited into the apertures 114 but also onto the second substrate 104.

(20) Thanks to the impermeability achieved between the different cavities 108 of the structure 100, it is for example possible to achieve in one of the cavities 108 a final pressure close to 1 bar, or even of more than 1 bar, and in an adjacent cavity, a very low pressure, for example lower than about 10.sup.1 mbar, and this thanks in particular to the portion 112 non-permeable to the gas and formed in the layer 110.

(21) In the example of FIGS. 1 and 2, the cavities 108 have dimensions substantially similar to each other. Alternatively, it is possible that the cavities 108 have different dimensions from each other.

(22) In the previously described structure 100, a portion of getter material 120 is arranged in the third cavity 108.3. This portion of getter material 120 is for making a gas absorption in order to reduce the pressure within the third cavity 108.3. Thus, in the previously described packaging structure 100, the pressure within the first cavity 108.1 is higher than that within the second cavity 108.2 which is in turn higher than that within the third cavity 108.3. In this example, because no gas is injected in the third cavity 108.3 and by virtue of the presence of the getter material 120, it is possible to achieve in the third cavity 108.3 a very low residual pressure for example lower than or equal to about 1 mbar, or even a vacuum level that can range up to about 10.sup.3 mbar, or even 10.sup.4 mbar. The pressure within the first cavity 108.1 is for example higher than or equal to about 1 bar. The pressure within the second cavity 108.2 is for example between about 10 mbars to a few hundred mbars (<1 bar).

(23) Alternatively, it is possible that portions of getter material are also arranged in one or more of the other cavities 108 of the structure 100.

(24) The assembly of the second substrate 104 to the first substrate 102 may correspond, for example, to a molecular, anodic, metal or sintered glass sealing. The nature of the layer 110 depends in particular on the sealing type made. The sealing made is however compatible with the presence of a layer of material permeable to the gas to be injected in the cavities 108. This assembly may be made or not under a particular atmosphere such that a particular gas composition and/or pressure are present in the cavities 108 before the gas injection step. The choice of a particular atmosphere upon assembling both substrates 102, 104 may in particular be made as a function of the desired atmosphere in the cavity(es) 108 which are not intended to be subjected to a gas injection (as the cavity 108.3 in the example described here).

(25) Alternatively to the example described in connection with FIGS. 1 and 2, it is possible that the apertures 114.1 and 114.2 are made at substantially similar distances from the cavities 108.1 to 108.2 such that the length of the part 116.1 of the layer 110 through which the gas passes to end in the first cavity 108.1 is substantially similar to that through which this gas passes to end in the second cavity 108.2. In this case, a pressure difference in the cavities 108.1 and 108.2 can be achieved by making the apertures

(26) 114.1 and 114.2 with different dimensions with respect to the other (with different diameters in the case of apertures 114 having a circular cross-section, or with sides with different dimensions in the case of apertures 114 having a cross-section with a shape other than circular, for example polygonal). A pressure difference in the cavities 108.1 and

(27) 108.2 can also be achieved by making the layer 110 such that the different parts 116 of this layer through which the gas is intended to pass have no similar widths, this gas thus passing through portions 116 of permeable material having different cross-sections.

(28) In the previously described first embodiment, a single portion 112 separates two adjacent cavities 108. Alternatively, it is possible that several portions 112 of material non-permeable to the gas injected in the cavities 108 are made in the layer 110, such that each portion 112 surrounds one of the cavities 108. In the example of FIG. 4, each of the cavities 108.1, 108.2 and 108.3 is surrounded by a portion 112 which are respectively referenced 112.1, 112.2 and 112.3 and each forming a bead of material non-permeable to the gas surrounding each of the cavities. Thus, two adjacent cavities 108 are separated from each other by two distinct portions 112 of non-permeable material. Such a configuration of the non-permeable material into several distinct beads is advantageous to make, after plugging the cavities 108, a cutting of the substrates 102, 104 in order to form individual chips each including one of the micro-devices 106. The configuration previously described in connection with FIG. 1 is on the other hand enough when the third micro-devices 106.1-106.3 are not intended to be separated from each other as individual chips.

(29) The steps of a method for manufacturing the structure 100 are described below in connection with FIGS. 5A to 5I. In these figures, a single cavity 108 is shown, although the structure 100 may include several cavities 108 in which several micro-devices 106 are packaged.

(30) The layer 110 of permeable material is first deposited onto the face of the second substrate 104 which is intended to be arranged on the side of the first substrate 102 (FIG. 5A). The layer 110 includes for example SiO.sub.2 and may be made by thermal (dry or wet) oxidation of the second substrate 104 when the same includes silicon, or by PECVD.

(31) The cavity 108 is then made through the layer 110 and in a part of the thickness of the second substrate 104, for example through dry or wet etching (FIG. 5B).

(32) The layer 110 is then locally etched, at the periphery of the cavity 108, in order to form in the layer 110 a location 122 in which the portion 112 of material non-permeable to the gas is intended to be made thereafter (FIG. 5C). The location 122 forms for example a trench surrounding the cavity 108.

(33) The portion 112 is then made by depositing into the location 122 the material(s) non-permeable to the gas to be injected in the cavity 108, for example a deposition of one or more metal layers into the location 122. In the example of FIG. 5D, the material(s) forming the portion 122 is (are) deposited into the location 122 but also advantageously next to this location, on a part of the layer 110, that is with a width (dimension along the axis X) higher than that of the location 122. This portion 112 is for example formed by one or more metal layers deposited by PVD, and then shaped by etching. It is however possible that the portion 112 is made with a width similar to that of the location 122, as is the case in previously described FIGS. 1 to 4, even with a width lower than that of the location 122. The portion 112 is thus here partly arranged into the layer 110.

(34) As shown in FIG. 5E, a portion of getter material 120 may be deposited onto the bottom wall of the cavity 108, in particular when the cavity 108 is intended to include a gas residual pressure lower than about 1 mbar once it is hermetically closed.

(35) Alternatively to the steps previously described in connection with FIGS. 5B and 5E, it is possible to make, directly after depositing the layer 110, the local etching of the layer 110 forming the location 122, and then forming the portion 112, and finally performing the etching of the cavity 108 through the layer 110 and a part of the thickness of the second substrate 104.

(36) The obtained cap shown in FIG. 5E is then assembled to the first substrate 102 including the micro-device(s) 106, for example by a metal sealing (heat compression or eutectic), as shown in FIG. 5F. Because the portion 112 has been previously made such that it is deposited into the location 122 but also that it covers a part of the layer 110, the material of the cap in contact with the first substrate 102 corresponds to the material of the portion 112 which thus acts as a sealing joint. The assembly between the first substrate 102 and the second substrate 104 is ensured both by the portion 112 and the layer 110.

(37) The aperture 114 is then made by etching through the second substrate 104 and the layer 110 such that it opens into the part of the layer 110 which is delimited by the portion 112 (FIG. 5G). As previously described, the aperture 114 may pass through the entire thickness of the layer 110 (and open onto the first substrate 102 or a part of the material of the portion 112 as is the case in FIG. 5G), or a part of the thickness of the layer 110, or also not pass through the layer 110 and directly open onto the same.

(38) The gas is then injected into the cavity 108 via the aperture 114 and the part 116 of the layer 110 which is arranged between the inside of the cavity 108 and the aperture 114 and which forms a channel of a material permeable to this gas. The gas path during this injection step is represented in dotted lines in FIG. 5H. FIG. 5H well illustrates the fact that the gas injected in the aperture 114 can pass only through the channel formed by the part 116 of the layer 110 and that this gas is blocked in the other direction by the portion 112. Thus, adjacent cavities are not impacted by the permeation of the gas passing through the aperture 114.

(39) As shown in FIG. 5I, the structure 100 is completed by plugging the aperture 114 by depositing the layer of the plugging material 118 in the aperture 114, and here also on the second substrate 104.

(40) A method for making the packaging structure 100 according to a second embodiment is described below in connection with FIGS. 6A to 6K.

(41) This second embodiment differs from the first embodiment in that the gas is intended to be injected into the cavities through apertures and channels made in the first substrate including the micro-devices. As for previous FIGS. 5A to 5I, a single cavity 108 is shown in FIGS. 6A to 6K, even though the structure 100 may include several cavities 108 in which several micro-devices 106 are packaged.

(42) In this second embodiment, the structure 100 is made from a first substrate 102 of the SOI (Silicon On Insulator)-type, or more generally of a semiconductor on insulator-type, including a solid layer 201, or support layer, the layer 110 arranged on the layer 201 and corresponding to the buried insulating layer (BOX) of the SOI substrate and the material of which (SiO.sub.2 for example) is permeable to the gas intended to be injected in the cavities of the packaging structure 100, and a superficial layer, or upper layer, of semiconductor 202, here silicon, arranged on the layer 110 and the thickness of which is for example lower than about 1 m (FIG. 6A).

(43) The location 122 of the portion 112 intended to hermetically close the cavity 108 at the layer 110 is then etched through the layers 202 and 110 (FIG. 6B).

(44) As shown in FIG. 6C, a thick semiconductor layer of the same nature as that of the layer 202 is then formed on the layer 202 and in the previously made location 122. This step is for example made by deposition, for example through epitaxy, and for example with a thickness corresponding to the desired semiconductor thickness for making the micro-device 106, for example between about 2 m and 100 m. The layer 202 and the deposited semiconductor form together a semiconductor layer 204 arranged on the layer 110 and, in the location 122, the deposited semiconductor forms the portion 112 of material non-permeable to the gas.

(45) The layer 204 is then structured by etching to obtain the micro-device 106, typically by deep etching of the semiconductor of the layer 204 and then releasing the micro-device 106 by etching, for example wet etching, parts of the layer 110 to which the micro-device 106 is secured (FIG. 6D).

(46) A substrate of another type than the SOI substrate may be used for making the micro-device 106. It is for example possible to use a semiconductor solid (of the bulk type) substrate, forming the first substrate 102, on which the layers 110 and 202 are made by successive depositions. It is also possible to use a BSOI (Bonded SOI)-type substrate the feature of which is to have a very thick semiconductor upper layer (typically between about 10 m and 100 m). However, the advantage of the use of an SOI substrate including a thin surface layer is, with respect to the use of a BSOI-type substrate, to facilitate the creation of the locations 122 and plugging these locations with semiconductor because of the thinness of the surface layer 202.

(47) In parallel to making the layer 110 and the micro-device 106 on the first substrate 102, the cap of the packaging structure 100 is made from the second substrate 104 (FIG. 6E).

(48) A sealing bead 206, for securing the second substrate 104 to the first substrate 102, is then made on one of the faces of the second substrate 104 (FIG. 6F). The sealing bead 206 for example includes one or more metal materials when the securement between the substrates 102 and 104 is to be made by metal sealing.

(49) The cavity 108 is then made through the second substrate 104 (FIG. 6G).

(50) A portion of getter material 120 may be made in the cavity 108, in particular when the pressure desired in the cavity 108 after hermetically closing the same is lower than about 1 mbar (FIG. 6H).

(51) The cap thus obtained is assembled to the first substrate 102, and more precisely to the layer 204, for example by a metal-type (heat compression or eutectic) sealing method, via the sealing bead 206 (FIG. 6I).

(52) The aperture 114 is then made from the back face of the first substrate 102, through the layer 201 and the layer 110 such that the aperture 114 opens onto or into the part of the layer 110 which is surrounded by the portion 112 (FIG. 6J).

(53) The gas is then injected into the aperture 114. The gas path in the aperture 114 and in the part 116 of the layer 110 through which the gas is intended to pass is represented in dotted lines in FIG. 6K. As previously, the gas residual pressure achieved in the cavity 108 depends on the dimensions of the cross-section of the aperture 114, on the geometry of the part 116 (length and cross-section) as well as on the pressure and on the duration with which the gas is sent into the aperture 114.

(54) After injecting the gas into the cavity 108, the packaging structure 100 is plugged by depositing the layer of plugging material 118, as previously described for the first embodiment, that is at least in the aperture 114 and possibly on the entire back face of the first substrate 102.

(55) Regardless of the embodiment of the packaging structure 100, the aperture 114 made through the first substrate 102 or through the second substrate 104 can further be used for making a conducting via (or TSV, that is Through Silicon Via). FIGS. 7A to 7E show part of the steps of a method for manufacturing the packaging structure 100 according to an alternative of the second embodiment in which the aperture 114 is used for making a conducting via. In FIGS. 7A to 7E, the packaging structure 100 is only partly shown.

(56) The steps previously described in connection with FIGS. 6A to 6I are first implemented. In FIG. 7A, a part of the structure 100 in which the aperture will be made is shown.

(57) The aperture 114 is then made from the back face of the first substrate 102, through the layer 201 and the layer 110, such that it opens onto a part 205 of the layer 204 forming an electrode of the micro-device 106 (FIG. 7B).

(58) A passivation layer 208 is then formed, for example by conformably depositing oxide on the layer 201 and onto the side walls of the aperture 114 (FIG. 7C). The part of the passivation layer 208 initially deposited onto the bottom wall of the aperture 114, that is on the part 205 forming an electrode of the micro-device 106, is removed, for example by etching, in order to make this electrode accessible from the aperture 114.

(59) A gas is then injected into the cavity 108 through the aperture 114 and the part 116 of the layer 110.

(60) An electrically conducting, for example metallic, layer 210, is then formed on a part of the passivation layer 208 located on the external face of the layer 201 and on the part 205 of the layer 204 (FIG. 7D). The layer 210 thus forms an electrical connection between the part 205 and one of the external faces of the structure 100 (here at the back face of the first substrate 102). The layer 110 also acts as a screen towards the gas injected into the cavity 108 and thus hermetically plugs the cavity 108.

(61) The structure 100 is then completed by depositing a second passivation layer 212 covering the electrically conducting layer 210. An aperture is then formed through the second passivation layer 212, facing a part of the layer 210 at which an electrical contact recovery is intended to be made. A metallization 214 is then made in this aperture and a connecting ball 216, acting as an electrical contact for the part 205, is formed on the metallization 214.