Method of passivating an iron disulfide surface via encapsulation in zinc sulfide

Abstract

A method for passivating the surface of crystalline iron disulfide (FeS.sub.2) by encapsulating it in crystalline zinc sulfide (ZnS). Also disclosed is the related product comprising FeS.sub.2 encapsulated by ZnS in which the sulfur atoms at the FeS.sub.2 surfaces are passivated. Additionally disclosed is a photovoltaic (PV) device incorporating FeS.sub.2 encapsulated by ZnS.

Claims

1. A method for passivating a surface of crystalline iron disulfide, comprising: sputtering iron disulfide to form a layer of crystalline iron disulfide on a substrate, wherein the layer has a surface comprising crystal surfaces; and depositing a capping layer of epitaxial zinc sulfide onto the surface of the crystalline iron disulfide layer under vacuum, wherein the crystal surfaces of the crystalline iron disulfide are encapsulated by the epitaxial zinc sulfide capping layer; wherein the epitaxial zinc sulfide capping layer passivates sulfur atoms present on the crystal surfaces on the surface of the crystalline iron disulfide layer, thereby reducing surface defects as compared to a crystalline iron disulfide layer not capped with a zinc sulfide capping layer.

2. The method of claim 1, wherein the substrate is a rigid material.

3. The method of claim 1, wherein the substrate is a flexible material.

4. The method of claim 1, wherein the crystalline iron disulfide comprises crystallites ranging in size from 1 nm to 10 m.

5. The method of claim 1, wherein the surface defects in the crystalline iron disulfide layer are assessed by comparing an X-ray photoelectron spectroscopy scan of S 2p doublets associated with surface defects with an X-ray photoelectric spectroscopy scan of S 2p doublets associated with the bulk state.

6. The method of claim 1, wherein the crystal surfaces on the surface of the layer of crystalline iron disulfide and the capping layer of epitaxial zinc sulfide form a lattice match.

7. The method of claim 1, wherein the capping layer of epitaxial zinc sulfide has a lattice constant of about 5.411 .

8. The method of claim 1, wherein the crystal surfaces on the surface of layer of crystalline iron disulfide have a lattice constant of about 5.417 .

9. The method of claim 1, wherein the capping layer of epitaxial zinc sulfide is deposited by physical vapor deposition.

10. The method of claim 1, wherein the capping layer of epitaxial zinc sulfide is deposited by chemical vapor deposition.

11. The method of claim 10, wherein the chemical vapor deposition is atomic layer deposition.

12. The method of claim 1, wherein the layer of crystalline iron disulfide is deposited by physical vapor deposition.

13. The method of claim 1, wherein the layer of crystalline iron disulfide is is deposited by chemical vapor deposition.

14. The method of claim 13, wherein the chemical vapor deposition is atomic layer deposition.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 shows a polycrystalline FeS.sub.2 film encapsulated by coating it with a ZnS capping layer.

(2) FIG. 2 shows XPS results comparing the S 2P peak. FIG. 2a is for FeS.sub.2 encapsulated by a ZnS capping layer. FIG. 2b is for FeS.sub.2 encapsulated by a ZnO capping layer. FIG. 2c is for FeS.sub.2 encapsulated by a SiO.sub.2 capping layer.

(3) FIG. 3 shows the atomic structure of an FeS.sub.2 nanocrystal embedded in a ZnS matrix, based on DFT results.

(4) FIG. 4 shows FeS.sub.2 crystallites encapsulated within a ZnS matrix. In FIG. 4a, the substrate is a rigid material. In FIG. 4b, the substrate is a flexible material.

(5) FIG. 5 shows FeS.sub.2 crystallites encapsulated within a ZnS matrix being employed in a PV device.

DETAILED DESCRIPTION OF THE INVENTION

(6) In one embodiment, FeS.sub.2 is sputtered at room temperature from a single target in a partial pressure (1105 T) of sulfur onto a glass substrate. The film was 200 nm thick and polycrystalline. It exhibited the expected cubic pyrite crystal structure as indicated by X-ray diffractometry. The sample was transferred to an evaporation chamber without removal to atmosphere, and a 40 nm thick layer of ZnS was deposited by thermal evaporation. A sketch of this sample is shown in FIG. 1. Transferring the sample between deposition chambers under vacuum avoids oxidation and contamination. Alternatively, high substrate temperature deposition of FeS.sub.2 may be carried out by sputtering from a multi-component target to a high temperature substrate (T.sub.s =400 C.), and sulfurdizing under flowing H.sub.2S at 500 C., for 5 hours. All vacuum-deposited fabrication results in high quality films.

(7) Initial X-ray photoelectron spectroscopy (XPS) results for this sample were obtained and compared to results for bare FeS.sub.2 and films with ZnS, ZnO and SiO.sub.2 encapsulation layers. The encapsulation layers were removed in steps inside an ultra-high vacuum chamber with an ion beam, and XPS scans were carried out after each removal step. The results, shown in FIG. 2, compare the S 2p doublets of 400 nm thick FeS.sub.2 films with 40 nm thick ZnS, ZnO, and SiO.sub.2 capping layers. In each case a combination of S 2p doublets associated with both the bulk states and surface defects is present. The peak with lowest binding energy (near 161 eV) is the S 2p.sub. 3/2component of the doublet and is associated with these surface defects. For both ZnO and SiO.sub.2, this peak is stronger than the peak associated with the bulk states, indicating a larger concentration of surface defects, presumably S.sup.2. For the ZnS-capped sample, however, the defect peak is smaller relative to the bulk peak, indicating that the surface defects have been partially passivated. This is the first demonstration of passivation of FeS.sub.2 surface defects by a ZnS capping layer.

(8) To obtain an atomic scale understanding of the bonding between FeS.sub.2 and ZnS, DFT calculations were carried out. The FeS.sub.2 and ZnS have a nearly perfect lattice match, with lattice spacings of 5.417 and 5.411 , respectively, and form an epitaxial layer. Because of this the two materials can form a nearly defect-free interface. An illustration of an FeS.sub.2nanocrystal encapsulated in ZnS, based on DFT, is shown in FIG. 3.

(9) Several other embodiments of the invention are shown in FIG. 4. In these cases, FeS.sub.2 crystallites are encapsulated within a ZnS matrix. The FeS.sub.2 crystallites may vary in size from 1 nm to 10 m, and the ZnS separating FeS.sub.2 crystallites is at least one monolayer thick. FIG. 4a shows an embodiment in which the substrate is a rigid material such as rigid glass or a semiconductor wafer; and FIG. 4b shows an embodiment in which the substrate is a flexible material such as polymer, flexible glass, or metal foil. In the latter case, the FeS.sub.2 and ZnS matrix constitute a film that may flex along with the substrate.

(10) In another embodiment, the film comprising FeS.sub.2 crystallites encapsulated within a ZnS matrix is employed as the absorber in a PV device. One example of a suitable device architecture is shown in FIG. 5. In this example, the device comprises a substrate, a conductive bottom contact, the FeS2 crystallites encapsulated within a ZnS matrix, a transparent p-type layer, a transparent conductive to serve as the top contact, and a metal grid that aids efficient charge collection. FeS.sub.2 is typically an n-type semiconductor, so in this architecture, the transparent p-type layer is used in conjunction with the FeS.sub.2/ZnS layer to form a p-n junction. Any other suitable PV device architecture, such as a Schottky junction device, could be used.

(11) The FeS.sub.2 crystallite size may vary from 1 nm to 10 cm. Individual crystallites may be in contact, as is the case in polycrystalline bulk samples or thin films, or crystallites may be separated with each entirely encapsulated in ZnS. The FeS.sub.2 may be a natural or synthetic bulk sample.

(12) The FeS.sub.2 may be film deposited by any suitable deposition technique. This technique may be any physical vapor, chemical vapor deposition, atomic layer deposition, or other suitable deposition process.

(13) The ZnS may be a film deposited by any suitable deposition technique. This technique may be any physical vapor, chemical vapor deposition, atomic layer deposition, or other suitable deposition process. The S content in FeS.sub.2 could vary by up to 20% from stoichiometry.

(14) The Fe in FeS.sub.2 could be partially substituted by Si with a ratio of up to 50%, i.e. Fe.sub.1xSi.sub.xS.sub.2 where x<0.5. The Zn in ZnS could be partially substituted by another metal including Ni, Mn, Cu, Ag, or Pb with a ratio of up to 50%. The S in ZnS could be partially substituted by Se or O with a ratio of up to 50%.

(15) The above descriptions are those of the preferred embodiments of the invention. Various modifications and variations are possible in light of the above teachings without departing from the spirit and broader aspects of the invention. It is therefore to be understood that the claimed invention may be practiced otherwise than as specifically described. Any references to claim elements in the singular, for example, using the articles a, an, the, or said, is not to be construed as limiting the element to the singular.