METAL-DOPED QUANTUM DOT, LED DEVICE AND BACKLIGHT MODULE

Abstract

A metal-doped quantum dot is provided. By doping metal in the intrinsic quantum dot, the quantum dot has fluorescent stability and may not be quenched at high temperature. Meanwhile, the metal-doped quantum dot is used to prepare red, green and blue quantum dot dielectric layers, and the red, green and blue quantum dot dielectric layers are packaged in a LED device to mix the red, green and blue light to obtain a white light. In addition, the above LED device can be used to prepare a LED bar with simple structure which is adapt for a side-incident backlight module and good for designing ultra-thin and narrow bezel product.

Claims

1. A metal-doped quantum dot, comprising: an intrinsic quantum dot made of any two or more of IB group element, IIB group element, IIIA group element, VA group element and VIA group element, and a doped metal which is one or more of IB group element, VIII group element and VIB group element.

2. The metal-doped quantum dot of claim 1, wherein the intrinsic quantum dot is one or more of CdSe, ZnS, ZnSe or CuInS, and the doped metal is one or more of Ag, Cr, Ni or Cu.

3. The metal-doped quantum dot of claim 1, wherein the content of the doped metal in the metal-doped quantum dot is 2-8%.

4. The metal-doped quantum dot of claim 2, wherein the content of the doped metal in the metal-doped quantum dot is 2-8%.

5. A method of preparing the metal-doped quantum dot of claim 1, comprising: preparing an intrinsic quantum dot and a metal to be doped; injecting the doped metal into the intrinsic quantum dot under conditions of heating reflux and stirring, to form the metal-doped quantum dot.

6. A method of preparing the metal-doped quantum dot of claim 2, comprising: preparing an intrinsic quantum dot and a metal to be doped; injecting the doped metal into the intrinsic quantum dot under conditions of heating reflux and stirring, to form the metal-doped quantum dot.

7. A method of preparing the metal-doped quantum dot of claim 3, comprising: preparing an intrinsic quantum dot and a metal to be doped; injecting the doped metal into the intrinsic quantum dot under conditions of heating reflux and stirring, to form the metal-doped quantum dot.

8. A LED device, comprises a positive electrode and a negative electrode, wherein the LED device further comprises a quantum dot dielectric layer disposed between the positive electrode and the negative electrode, and the quantum dot dielectric layer comprises a metal doped quantum dot, wherein the metal-doped quantum dot comprises an intrinsic quantum dot made of any two or more of IB group element, IIB group element, IIIA group element, VA group element or VIA group element, and a doped metal which is one or more of IB group element, VIII group element or VIB group element.

9. The LED device of claim 8, wherein the quantum dot dielectric layer includes a blue light quantum dot dielectric layer, a green light quantum dot dielectric layer and a red light quantum dot dielectric layer.

10. The LED device of claim 9, wherein the blue light quantum dot dielectric layer, the green light quantum dot dielectric layer and the red light quantum dot dielectric layer are sequentially disposed from the negative electrode to the positive electrode, such that both sides of the blue light quantum dot dielectric layer contact the negative electrode and the green light quantum dot dielectric layer, respectively; and both sides of the red light quantum dot dielectric layer contact the positive electrode and the green light quantum dot dielectric layer, respectively.

11. A backlight module, comprises: a light guide plate, a LED bar disposed at an edge side of the light guide plate, an optical film disposed above the light guide plate and a reflective sheet disposed under the light guide plate, wherein the LED bar comprises a LED device comprising a positive electrode, a negative electrode and a quantum dot dielectric layer disposed between the negative electrode and the positive electrode, and the quantum dot dielectric layer comprises an intrinsic quantum dot which is made of any two or more of IB group element, IIB group element, IIIA group element, VA group element or VIA group element, and a doped metal which is one or more of IB group element, VIII group element or VIB group element.

12. The backlight module of claim 11, wherein the LED bar further comprises a frame for fixing the LED device, and the LED bar is strip shaped to allow the several LED devices to be arranged along the length direction of the frame, and the width of the frame is greater than the width of any of the LED devices to receive the LED device.

13. The backlight module of claim 12, wherein the backlight module is a side-incident backlight module.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0040] FIG. 1 is a comparison diagram of temperature decay testing of the ZnSe quantum dot not doped with metal and the ZnSe quantum dot doped with metal in the present invention.

[0041] FIG. 2 is a structural diagram of the LED device provided in embodiment 10.

[0042] FIG. 3 is a structural diagram of the LED device provided in embodiment 12.

[0043] FIG. 4 is a structural diagram of the LED bar provided in embodiment 12.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS

[0044] Below, the present disclosure will be explained in details according to detailed embodiments. It should be understood that, these detailed exemplary embodiments are only used to illustrate the present invention, but not make any limitation of any forms to the actual protection scope of the present invention.

Embodiment 1

[0045] The present embodiment provides a metal-doped quantum dot, which is prepared as follows:

[0046] preparing an intrinsic quantum dot, i.e., ZnSe quantum dot; and

[0047] injecting copper ions as metal element into the ZnSe quantum dot at 160 C., constantly stirring and heating for 5 hours, thereby forming the ZnSe quantum dot doped with copper ions (which is named Q-1), in which the content of the doped copper ions is about 5%.

[0048] The quantum dot is a blue light quantum dot and has a particle size of 11 nm.

Embodiment 2

[0049] The present embodiment provides a metal-doped quantum dot, which is prepared as follows:

[0050] preparing an intrinsic quantum dot, i.e., ZnSe quantum dot; and

[0051] injecting copper ions as metal element into the ZnSe quantum dot at 140 C., constantly stirring and heating for 10 hours, thereby forming the ZnSe quantum dot doped with copper ions (which is named Q-2), in which the content of the doped copper ions is about 3%.

[0052] The quantum dot is a blue light quantum dot and has a particle size of 8 nm.

Embodiment 3

[0053] The present embodiment provides a metal-doped quantum dot, which is prepared as follows:

[0054] preparing an intrinsic quantum dot, i.e., ZnSe quantum dot; and

[0055] injecting copper ions as metal element into the ZnSe quantum dot at 180 C., constantly stirring and heating for 7.5 hours, thereby forming the ZnSe quantum dot doped with copper ions (which is named Q-3), in which the content of the doped copper ions is about 8%.

[0056] The quantum dot is a blue light quantum dot and has a particle size of 12 nm.

Embodiment 4

[0057] The present embodiment provides a metal-doped quantum dot, which is prepared as follows:

[0058] preparing an intrinsic quantum dot, i.e., ZnSe quantum dot; and

[0059] injecting copper ions as metal element into the ZnSe quantum dot at 160 C., constantly stirring and heating for 7.5 hours, thereby forming the ZnSe quantum dot doped with copper ions (which is named Q-4), in which the content of the doped copper ions is about 5%.

[0060] The quantum dot is a green light quantum dot and has a particle size of 17 nm.

Embodiment 5

[0061] The present embodiment provides a metal-doped quantum dot, which is prepared as follows:

[0062] preparing an intrinsic quantum dot, i.e., ZnSe quantum dot; and

[0063] injecting copper ions as metal element into the ZnSe quantum dot at 140 C., constantly stirring and heating for 10 hours, thereby forming the ZnSe quantum dot doped with copper ions (which is named Q-5), in which the content of the doped copper ions is about 4%.

[0064] The quantum dot is a green light quantum dot and has a particle size of 12 nm.

Embodiment 6

[0065] The present embodiment provides a metal-doped quantum dot, which is prepared as follows:

[0066] preparing an intrinsic quantum dot, i.e., ZnSe quantum dot; and

[0067] injecting copper ions as metal element into the ZnSe quantum dot at 180 C., constantly stirring and heating for 7.5 hours, thereby forming the ZnSe quantum dot doped with copper ions (which is named Q-6), in which the content of the doped copper ions is about 7%.

[0068] The quantum dot is a green light quantum dot and has a particle size of 20 nm.

Embodiment 7

[0069] The present embodiment provides a metal-doped quantum dot, which is prepared as follows:

[0070] preparing an intrinsic quantum dot, i.e., ZnSe quantum dot; and

[0071] injecting copper ions as metal element into the ZnSe quantum dot at 160 C., constantly stirring and heating for 10 hours, thereby forming the ZnSe quantum dot doped with copper ions (which is named Q-7), in which the content of the doped copper ions is about 5%.

[0072] The quantum dot is a red light quantum dot and has a particle size of 23 nm.

Embodiment 8

[0073] The present embodiment provides a metal-doped quantum dot, which is prepared as follows:

[0074] preparing an intrinsic quantum dot, i.e., ZnSe quantum dot; and

[0075] injecting copper ions as metal element into the ZnSe quantum dot at 150 C., constantly stirring and heating for 9 hours, thereby forming the ZnSe quantum dot doped with copper ions (which is named Q-8), in which the content of the doped copper ions is about 4%.

[0076] The quantum dot is a red light quantum dot and has a particle size of 18 nm.

Embodiment 9

[0077] The present embodiment provides a metal-doped quantum dot, which is prepared as follows:

[0078] preparing an intrinsic quantum dot, i.e., ZnSe quantum dot; and

[0079] injecting copper ions as metal element into the ZnSe quantum dot at 180 C., constantly stirring and heating for 8 hours, thereby forming the ZnSe quantum dot doped with copper ions (which is named Q-9), in which the content of the doped copper ions is about 7%.

[0080] The quantum dot is a red light quantum dot and has a particle size of 25 nm.

[0081] Performance Testing Experiments

[0082] As for the ZnSe quantum dot not doped with a metal, a temperature decay test is performed to respective ZnSe quantum dot doped with copper ions prepared in the embodiments 1-9, the result is shown in FIG. 1.

[0083] As shown in FIG. 1, luminescence decay of the ZnSe quantum dot not doped with a metal gets obvious with the temperature raises, but luminescence decay of the ZnSe quantum dot doped with copper ions is not obvious when the temperature rises, that means the ZnSe quantum dot doped with copper ions has good thermal stability, i.e., the metal-doped quantum dot has good thermal stability and may not be easily quenched at high temperature.

Embodiment 10

[0084] The present embodiment discloses a LED device, as shown in FIG. 2, the LED device includes an ITO negative electrode 11 disposed on the left side, a sliver positive electrode 12 disposed on the right side and quantum dot dielectric layers disposed therebetween. These quantum dot dielectric layers are a blue light quantum dot dielectric layer 13 having a thickness of 3 um, a green light quantum dot dielectric layer 14 having a thickness of 2 um and a red light quantum dot dielectric layer 15 having a thickness of 2 um disposed in a sequence from left to right, where the left side of the light quantum dot dielectric layer 13 contacts the ITO negative electrode, the right side of the blue light quantum dot dielectric layer 13 contacts the green light quantum dot dielectric layer 14, the right side of the green quantum dielectric layer 14 contacts the left the side of the red light quantum dot dielectric layer 15, and the right side of the red quantum dot dielectric layer 15 contacts the metal positive electrode 12.

[0085] It can be understood that the blue light quantum dot dielectric layer in the present embodiment is composed of the blue quantum dots in embodiment 1, the green light quantum dot dielectric layer is composed of the green light quantum dots in embodiment 4, and the red light quantum dot dielectric layer is composed of the red quantum dots in embodiment 7.

[0086] In the present embodiment, a LED device is made by means of evaporation technique. In particular, the LED device is manufactured by evaporating and stacking the blue light quantum dot dielectric layer, the green light quantum dot dielectric layer, the red light quantum dot dielectric layer and the sliver positive electrode sequentially on the ITO negative electrode. Further, evaporation technique is a conventional technique, thus is not illustrated herein.

Embodiment 11

[0087] Embodiment 11 differs from embodiment 10 only in that the thickness of the blue light quantum dot dielectric layer is 2 m, the thickness of the green light quantum dot dielectric layer is 1 m, and the thickness of the red light quantum dot dielectric layer is 1 m according to the present embodiment.

Embodiment 12

[0088] The present embodiment provides a side-incident backlight module. As shown in FIG. 3, the side-incident module includes a light guide plate 2, a LED bar 1 disposed on the left side of the light guide plate 2, an optical film 3 disposed above the light guide plate 2 and a reflective sheet 4 disposed under the light guide plate.

[0089] As shown in FIG. 4, the LED bar 1 includes several LED devices 10 and a frame 20 for fixing the LED devices. The frame 20 is strip shaped to allow the several LED devices 10 to be arranged therein along the length direction of the frame 20 (left-right direction shown in FIG. 4), and the width of the frame 20 (up-down direction shown in FIG. 2) is greater than that of the LED device, such that several LED devices can be arranged in a line in the frame exactly. On can understand that, the LED device in the present embodiment is the LED device prepared in embodiment 4, and the number of the LED bars can be determined according demand of the backlight module, thus the number of the LED devices may be 12 as shown in FIG. 4, or other numbers.

[0090] The above embodiments in the present disclosure are enumerated to explain the present disclosure clearly, but not limitation to the embodiments in the present invention. To those ordinary skilled in the art, any other change or variation in different forms can also be made based on the above explanation. Here, it cannot or do not have to make an exhaustion to all embodiments. Any amendments, equivalent placement and improvement made within the spirit and principle of the present disclosure should be included in the protection scope of the claims of the present invention.