Method for manufacturing on compound glass substrate multi-colored LED for use in video display board

Abstract

A method for manufacturing on a compound glass substrate a multi-colored LED for use in a video display board includes preparing a first masking layer on a compound glass substrate; depositing a first-color epitaxial layer on the first-color LED growing region and the first masking layer, to form a first-color LED; removing the first masking layer and the first-color epitaxial layer on the first masking layer; preparing a second masking layer, wherein the second masking layer is used to mask another region except a second-color LED growing region; depositing a second-color epitaxial layer on the second-color LED growing region and the second masking layer, to form a second-color LED; removing the second masking layer and the second-color epitaxial layer on the second masking layer; and grinding, cleaning, and performing an electrical test on a surface of the compound glass substrate.

Claims

1. A method for manufacturing on a compound glass substrate a multi-colored LED for use in a video display board, the compound glass substrate comprising a glass substrate and an individualized epitaxial dice of crystal substrate accommodated at one side of the glass substrate, the method comprising: preparing a first masking layer on a compound glass substrate, wherein the first masking layer is used to mask another region except a first-color LED growing region; depositing a first-color epitaxial layer on the first-color LED growing region and the first masking layer, to form a first-color LED, wherein the first-color epitaxial layer comprises a first-color N-type epitaxial layer and a first-color P-type epitaxial layer; removing the first masking layer and the first-color epitaxial layer on the first masking layer; preparing a second masking layer, wherein the second masking layer is used to mask another region except a second-color LED growing region; depositing a second-color epitaxial layer on the second-color LED growing region and the second masking layer, to form a second-color LED, wherein the second-color epitaxial layer comprises a second-color N-type epitaxial layer and a second-color P-type epitaxial layer; removing the second masking layer and the second-color epitaxial layer on the second masking layer; and grinding, cleaning, and performing an electrical test on a surface of the compound glass substrate; wherein the first masking layer, the second masking layer, and the third masking layer are prepared at one side of the individualized epitaxial dice of crystal substrate; the preparing of the first masking layer on the compound glass substrate comprises: depositing SiO.sub.2 on the compound glass substrate by means of physical vapor deposition; performing step Mesa photoetching on the Sio.sub.2, to expose SiO.sub.2 on the first-color LED growing region; and etching the SiO.sub.2 on the first-color LED growing region, to expose the individualized epitaxial dice of crystal substrate within the first-color LED growing region.

2. The method according to claim 1, wherein the individualized epitaxial dice of crystal substrate comprise: any one of an SiC lining, an Al.sub.2O.sub.3 lining, and a GaAs lining.

3. The method according to claim 1, wherein the deposition is specifically: causing epitaxial layer growing by using a metal-organic chemical vapor deposition (MOCVD) method.

4. The method according to claim 1, wherein before the grinding, cleaning, and performing an electrical test on a surface of the compound glass substrate, the method further comprises: preparing a third masking layer, wherein the third masking layer is used to mask another region except a third-color LED growing region; depositing a third-color epitaxial layer on the third-color LED growing region and the third masking layer, to form a third-color LED, wherein the third-color epitaxial layer comprises a third-color N-type epitaxial layer and a third-color P-type epitaxial layer; and removing the third masking layer and the third-color epitaxial layer on the third masking layer.

5. A method for manufacturing on a compound glass substrate a multi-colored LED for use in a video display board, the compound glass substrate comprising a glass substrate and an individualized epitaxial dice of crystal substrate accommodated at one side of the glass substrate, the method comprising: preparing a first masking layer on a compound glass substrate, wherein the first masking layer is used to mask another region except a first-color LED growing region; depositing a first-color epitaxial layer on the first-color LED growing region and the first masking layer, to form a first-color LED, wherein the first-color epitaxial layer comprises a first-color N-type epitaxial layer and a first-color P-type epitaxial layer; removing the first masking layer and the first-color epitaxial layer on the first masking layer; preparing a second masking layer, wherein the second masking layer is used to mask another region except a second-color LED growing region; depositing a second-color epitaxial layer on the second-color LED growing region and the second masking layer, to form a second-color LED, wherein the second-color epitaxial layer comprises a second-color N-type epitaxial layer and a second-color P-type epitaxial layer; removing the second masking layer and the second-color epitaxial layer on the second masking layer; and grinding, cleaning, and performing an electrical test on a surface of the compound glass substrate; wherein the first masking layer, the second masking layer, and the third masking layer are prepared at one side of the individualized epitaxial dice of crystal substrate; wherein the preparing of the second masking layer specifically comprises: depositing SiO.sub.2 on the compound glass substrate by means of physical vapor deposition; performing step Mesa photoetching on the SiO.sub.2, to expose SiO.sub.2 on the second-color LED growing region; and etching the SiO.sub.2 on the second-color LED growing region, to expose the individualized epitaxial dice of crystal substrate within the second-color LED growing region.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 is a flowchart of a method for manufacturing on a compound glass substrate a multi-colored LED for use in a video display board according to an embodiment of the present invention;

(2) FIG. 2 is a first schematic diagram of a process of the manufacturing method according to this embodiment of the present invention;

(3) FIG. 3 is a second schematic diagram of a process of the manufacturing method according to this embodiment of the present invention;

(4) FIG. 4 is a third schematic diagram of a process of the manufacturing method according to this embodiment of the present invention;

(5) FIG. 5 is a fourth schematic diagram of a process of the manufacturing method according to this embodiment of the present invention;

(6) FIG. 6 is a fifth schematic diagram of a process of the manufacturing method according to this embodiment of the present invention;

(7) FIG. 7 is a sixth schematic diagram of a process of the manufacturing method according to this embodiment of the present invention;

(8) FIG. 8 is a seventh schematic diagram of a process of the manufacturing method according to this embodiment of the present invention;

(9) FIG. 9 is an eighth schematic diagram of a process of the manufacturing method according to this embodiment of the present invention;

(10) FIG. 10 is a ninth schematic diagram of a process of the manufacturing method according to this embodiment of the present invention;

(11) FIG. 11 and FIG. 12 respectively are a schematic cross-sectional view and a front view of a pit-matrix glass plate formed through thermo-compressionally shaping;

(12) FIG. 13(a) and FIG. 13(b) respectively are a cross-sectional view and a top view of a lining;

(13) FIG. 14 shows a mounted interleaving paper;

(14) FIG. 15 and FIG. 16 respectively are a front view and a cross-sectional view of a glass plate obtained after linings are mounted onto pits; and

(15) FIG. 17 and FIG. 18 respectively are a cross-sectional view and a front view of a glass plate formed through high-temperature thermo-compressionally shaping.

DETAILED DESCRIPTION

(16) The following further describes in detail technical solutions of the present invention with reference to the accompanying drawings and embodiments.

(17) A method for manufacturing on a compound glass substrate a multi-colored LED for use in a video display board provided in the present invention is mainly applied to display panel manufacturing in the fields such as LED display, mini-spacing LED display, ultra-high density LED display, front-light-emitting LED television, front-light-emitting LED monitor, LED video wall, LED indicator, and LED special lighting.

(18) FIG. 1 is a flowchart of a method for manufacturing on a compound glass substrate a multi-colored LED for use in a video display board according to an embodiment of the present invention. In this embodiment, using a three-colored LED manufacturing method as an example for description, a person skilled in the art should know according to descriptions of the present invention that a method for preparing a single-colored, double-colored, or three-colored LED may be obtained by simplifying or repeating partial processing based on the method of the present invention.

(19) The compound glass substrate used in this embodiment is a compound glass substrate manufactured by using a method for manufacturing a compound glass substrate for use in an epitaxial LED display module applied in patent No. 201410485949.5, and includes a glass substrate and an individualized epitaxial dice of crystal substrate accommodated at one side of the glass substrate, where the individualized epitaxial dice may include: an SiC lining, an Al.sub.2O.sub.3 lining, a GaAs lining, or the like.

(20) It should be noted that, in the manufacturing method in the present invention, a color of an LED chip needed at each position on a video display board is preset, and the individualized epitaxial dice is preferably arranged into a matrix with equal spacing and is used for LED epitaxial growth.

(21) The manufacturing method of the present invention includes the following steps:

(22) Step 101: Prepare a first masking layer on a compound glass substrate, where the first masking layer is used to mask another region except a first-color LED growing region.

(23) Specifically, as shown in FIG. 2, the first masking layer is an SiO.sub.2 layer, and is used to mask the another region except the first-color LED growing region. In this example, a first color is blue.

(24) The preparing a first masking layer specifically includes:

(25) depositing SiO.sub.2 on one side, accommodated with the individualized epitaxial dice, of the compound glass substrate by means of physical vapor deposition;

(26) performing step Mesa photoetching on the SiO2, to expose SiO2 on the first-color LED growing region; and

(27) etching the SiO2 on the first-color LED growing region, to expose the individualized epitaxial dice within the first-color LED growing region.

(28) Step 102: Deposit a first-color epitaxial layer on the first-color LED growing region and the first masking layer, to form a first-color LED.

(29) Specifically, as shown in FIG. 3, the first-color epitaxial layer includes a first-color N-type epitaxial layer (B-N) and a first-color P-type epitaxial layer (B-P).

(30) In this example, the epitaxial layer is GaN. An MOCVD method is used as the deposition method.

(31) Step 103: Remove the first masking layer and the first-color epitaxial layer on the first masking layer.

(32) Specifically, as shown in FIG. 4, only the B-N and B-P within the first-color LED growing region is kept after the removing, to form the first-color LED, that is, a blue LED.

(33) Step 104: Prepare a second masking layer, where the second masking layer is used to mask another region except a second-color LED growing region.

(34) Specifically, as shown in FIG. 5, the second masking layer is an SiO.sub.2 layer, and is used to mask the another region except the second-color LED growing region. In this example, a second color is green.

(35) The preparing a second masking layer specifically includes:

(36) depositing SiO.sub.2 on one side, accommodated with the individualized epitaxial dice, of the compound glass substrate by means of physical vapor deposition;

(37) performing step Mesa photoetching on the SiO.sub.2, to expose SiO.sub.2 on the first-color LED growing region; and

(38) etching the SiO.sub.2 on the first-color LED growing region, to expose the individualized epitaxial dice within the first-color LED growing region.

(39) Step 105: Deposit a second-color epitaxial layer on the second-color LED growing region and the second masking layer, to form a second-color LED.

(40) Specifically, as shown in FIG. 6, the second-color epitaxial layer includes a second-color N-type epitaxial layer (G-N) and a second-color P-type epitaxial layer (G-P).

(41) The deposition method for the epitaxial layer may also be implemented in an MOCVD manner.

(42) Step 106: Remove the second masking layer and the second-color epitaxial layer on the second masking layer.

(43) Specifically, a removing method is the same as the method shown in step 103. As shown in FIG. 7, only G-N and G-P within the second-color LED growing region are kept after the removing, to form a second-color LED, that is, a green LED.

(44) Step 107: Prepare a third masking layer, where the third masking layer is used to mask another region except a third-color LED growing region.

(45) Specifically, as shown in FIG. 8, the third masking layer is an SiO.sub.2 layer, and is used to mask the another region except the third-color LED growing region. In this example, a third color is red.

(46) The preparation method is the same as the preparation method of the foregoing two masking layers, and no further details are described herein again.

(47) Step 108: Deposit a third-color epitaxial layer on the third-color LED growing region and the third masking layer, to form a third-color LED.

(48) Specifically, as shown in FIG. 9, the third-color epitaxial layer includes a third-color N-type epitaxial layer (R-N) and a third-color P-type epitaxial layer (R-P).

(49) The deposition method for the epitaxial layer may also be implemented in an MOCVD manner.

(50) Step 109: Remove the third masking layer and the third-color epitaxial layer on the third masking layer.

(51) Specifically, a removing method is the same as the method shown in step 103. As shown in FIG. 10, only R-N and R-P within the third-color LED growing region are kept after the removing, to form a third-color LED, that is, a red LED.

(52) Therefore, the three-colored LED, for use in a video display board, needing to be manufactured in the present invention is obtained.

(53) Step 110: Grind, clean, and perform an electrical test on a surface of the compound glass substrate.

(54) It should be noted that, in the present invention, an MOCVD deposition process is used for LED epitaxy, so that multiple chips can be obtained by means of one time of epitaxy.

(55) For the convenience of understanding, the following briefly describes a process of preparing the compound glass substrate.

(56) First, a glass plate is prepared, and a pit matrix is formed on the glass plate through thermo-compressionally shaping. The matrix is shown in FIG. 11. In an example, the pits have a same size and depth, and spacing between the pits is the same.

(57) Then, individualized epitaxial dice of crystal substrate are prepared. Material of the dice may be SiC, Al.sub.2O.sub.3, GaAs, or the like. The dice are generally 80 micrometers thick, and in a rectangular shape. FIG. 13(a) and FIG. 13(b) respectively are a cross-sectional view and a top view of the dice. The dice may be obtained by cutting a large made-up sheet by using a laser.

(58) A graphic lining is mounted onto a WAFER interleaving paper. The interleaving paper obtained after mounting is shown in FIG. 13.

(59) A needle printer is used to mount the dice from the WAFER into the pit in the glass plate. The front view and the rear view of the glass plate after the dice are mounted onto the pits are respectively shown in FIG. 14 and FIG. 15.

(60) Finally, thermo-reshaping is performed on the glass plate until the compound glass substrate is formed. In a process of positioning and thermo-compressionally shaping in a mould, the glass is in a melting state. In this case, the glass plate is separately shown in FIG. 16 and FIG. 17. Cooling, mould striping, grinding and polishing a surface integrated with the individualized epitaxial dice, high-temperature melt-down and annealing, cleaning, drying, testing, and packaging are performed sequentially.

(61) In the method for manufacturing on a compound glass substrate a multi-colored LED for use in a video display board provided in the present invention, epitaxial layers for growing different colors are selected separately by using masking layers, so as to form LEDs of different colors on different regions of a compound glass substrate. The method provided in the present invention has easy implementation, is low-cost, and is applicable to mass production and application. Epitaxial growth of multiple LEDs with a same color can be completed on the compound glass substrate at a time, to form an LED display module, which therefore ensures consistency between LED chips of colors in the LED display module, that is, ensures consistent and good display effect, so that an MTBF of an LED display panel achieves stability and reliability of 100 thousand hours.

(62) In the foregoing embodiment, the parameters such as the temperature, the concentration, and the time are only a specific embodiment, and do not limit the present invention. A person skilled in the art can adjust the parameters without creative efforts, to obtain effect the same as that in the present invention. Therefore, adjustment on the parameter values shall fall within the protection scope of the present invention.

(63) The foregoing specific implementation manners are details descriptions of the objective, the technical solutions, and the beneficial effects of the present invention. It should be understood that, the foregoing descriptions are merely specific implementation manners of the present invention, but are not intended to limit the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present disclosure shall fall within the protection scope of the present invention.