Supporting unit, substrate treating device including the same, and method of manufacturing the supporting unit

Abstract

Provided is a supporting unit. The supporting unit includes: a supporting plate including a substrate on a top surface thereof; and a heater having a predetermined pattern at a bottom surface of the supporting plate and heating the supporting plate, wherein the heater includes: a first metal plating layer applied on the bottom surface of the supporting plate along the predetermined pattern; an anti-oxidation layer of a conductive material applied on the first metal plating layer along the predetermined pattern; and a second metal plating layer of a conductive material applied on the anti-oxidation layer in a portion of the pattern.

Claims

1. A supporting unit for heating a semiconductor substrate, comprising: a supporting plate configured to support the semiconductor substrate on a top surface thereof; and a heater having a predetermined pattern at a bottom surface of the supporting plate and heating the supporting plate, wherein the heater comprises: a first metal plating layer applied on the bottom surface of the supporting plate along the predetermined pattern; an anti-oxidation layer of a conductive material applied on the first metal plating layer along the predetermined pattern; and a second metal plating layer of a conductive material applied on the anti-oxidation layer in a portion of the predetermined pattern, and wherein the second metal plating layer is thicker than the first metal plating layer.

2. The supporting unit of claim 1, wherein the second metal plating layer has a thicker thickness than the anti-oxidation layer.

3. The supporting unit of claim 1, wherein the anti-oxidation layer and the second metal plating layer are formed of the same material.

4. The supporting unit of claim 2, wherein the predetermined pattern includes a terminal part that is directly connected to a wire connected to an external power, and the first metal plating layer, the anti-oxidation layer, and the second metal plating layer are sequentially applied on the terminal part.

5. The supporting unit of claim 2, wherein the heater comprises: a first pattern formed in a first area of the supporting plate; a second pattern formed in a second area of the supporting plate separated from the first area, and separated from the first pattern; and a connection pattern connecting the first pattern and the second pattern, wherein the first metal plating layer and the anti-oxidation layer are sequentially applied on the bottom surface of the supporting plate in the first pattern and the second pattern, and wherein the first metal plating layer, the anti-oxidation layer, and the second metal plating layer are sequentially applied on the bottom surface of the supporting plate in the connection pattern.

6. The supporting unit of claim 3, wherein the second metal plating layer is formed of gold (Au).

7. A substrate processing device comprising: a chamber having a space therein; a supporting plate provided inside the chamber and including a semiconductor substrate on a top surface thereof; and a heater forming a predetermined pattern at a bottom surface of the supporting plate and heating the supporting plate, wherein the heater has a first portion of the predetermined pattern for generating heat based on current applied to the predetermined pattern and a second portion of the predetermined pattern for generating no heat, and wherein the second portion is located near a terminal of the predetermined pattern, wherein a first metal plating layer and an anti-oxidation layer are sequentially applied on the bottom surface of the supporting plate in the first portion of the predetermined pattern, wherein the first metal plating layer, the anti-oxidation layer, and a second metal plating layer are sequentially applied on the bottom surface of the supporting plate in the second portion of the predetermined pattern, and wherein the second metal plating layer is thicker than the anti-oxidation layer of a metal material.

8. The substrate processing device of claim 7, wherein the anti-oxidation layer and the second metal plating layer are formed of the same material.

9. The substrate processing device of claim 7, wherein the heater includes a terminal part that is directly connected to a wire applying current, and the terminal part corresponds to the second portion of the predetermined pattern.

10. The substrate processing device of claim 7, wherein the bottom surface of the supporting plate has a first area and a second area separated from each other, wherein the heater comprises: a first pattern formed in the first area and corresponding to the first portion of the predetermined pattern; a second pattern formed in the second area and corresponding to the first portion of the predetermined pattern; and a connection pattern connecting the first pattern and the second pattern and corresponding to the second portion of the predetermined pattern.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) The accompanying drawings are included to provide a further understanding of the present invention, and are incorporated in and constitute a part of this specification. The drawings illustrate exemplary embodiments of the present invention and, together with the description, serve to explain principles of the present invention. In the drawings:

(2) FIG. 1 is a view illustrating a substrate processing device according to an embodiment of the present invention;

(3) FIG. 2 is a bottom view illustrating a supporting unit of FIG. 1;

(4) FIG. 3 is a sectional view taken along line A-A of FIG. 2;

(5) FIG. 4 is a view illustrating a supporting unit according to another embodiment of the present invention;

(6) FIG. 5 is a sectional view taken along line B-B of FIG. 4;

(7) FIG. 6 is a view illustrating a supporting unit according to another embodiment of the present invention;

(8) FIG. 7 is a flowchart illustrating a process of manufacturing a supporting unit according to an embodiment of the present invention;

(9) FIGS. 8 to 12 are views illustrating a process of manufacturing a supporting unit according to the flowchart of FIG. 7;

(10) FIG. 13 is a flowchart illustrating a process of manufacturing a supporting unit according to an embodiment of the present invention; and

(11) FIGS. 14 to 18 are views illustrating a process of manufacturing a supporting unit according to the flowchart of FIG. 13.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

(12) Preferred embodiments of the present invention will be described below in more detail with reference to the accompanying drawings. The present invention may, however, be embodied in different forms and should not be constructed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the present invention to those skilled in the art.

(13) In the drawings, the dimensions of layers and regions are exaggerated for clarity of illustration. It will also be understood that when a layer (or film) is referred to as being on another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present. Further, it will be understood that when a layer is referred to as being under another layer, it can be directly under, and one or more intervening layers may also be present. In addition, it will also be understood that when a layer is referred to as being between two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present. Like reference numerals refer to like elements throughout.

(14) Hereinafter, it will be described about an exemplary embodiment of the present invention in conjunction with the accompanying drawings.

(15) FIG. 1 is a view illustrating a substrate processing device according to an embodiment of the present invention. FIG. 2 is a bottom view illustrating a supporting unit of FIG. 1.

(16) Referring to FIGS. 1 and 2, the substrate processing device 10 includes a chamber 100 and a supporting unit 200.

(17) A space is formed inside the chamber 100. An opening 101 is formed at one sidewall of the chamber 100 and provided as a path through which a substrate W enters and exits.

(18) The supporting unit 200 is provided inside the chamber to support the substrate W. The supporting unit 200 includes a supporting plate 210 and a heater 220.

(19) The supporting plate 210 is a disk having a predetermined thickness and has a radius corresponding to or greater than the substrate W. The substrate W is disposed on the top surface of the supporting plate 210. The supporting plate 210 may be formed of ceramic material. The ceramic material at a high temperature has high chemical stability and less heat deformation.

(20) The heater 220 is formed in a predetermined pattern at the bottom surface of the supporting plate 210 and generates heat by resisting an applied current. The heater 220 generates heat in proportional to a resistance value. A heat generated from the heater 220 is delivered to the substrate W through the supporting plate 210. The heat is dissipated while passing through the supporting plate 210 and delivered to the substrate W with uniform temperature distribution.

(21) The pattern of the heater 220 has a heating area 221 and a non-heating area 222. The heating area 221 has a large resistance value, and thus has a large heating value. The non-heating area 222 has a small resistance value, and thus has a small heating value. The resistance value of the non-heating area 222 is close to 0 and in this case, a heating value is minimized or no heating occurs.

(22) The pattern of the heater 220 has a terminal part 221. The terminal part 221 is an area that is directly connected to a wire connected to an external power. The terminal part 221 is an area applying current to the pattern of the heater 220 and applies current to a portion instead of uniformly applying current to each area. When heat is generated at the terminal part 221, temperature distribution delivered to the substrate W becomes non-uniform. Since a point where the terminal part 221 is provided has a relatively high heating value, an area of the substrate W adjacent to the terminal part 221 may be heated locally at a higher temperature than other areas. Such a temperature imbalance of the substrate W makes substrate processing uneven. Due to the above reason, the terminal part 221 is provided as a non-heating area.

(23) FIG. 3 is a sectional view taken along line A-A of FIG. 2.

(24) Referring to FIG. 3, the heater 220 includes a first metal plating layer a, an anti-oxidation layer b, and a second metal plating layer c.

(25) The first metal plating layer a is formed along the pattern of the heater 220 at a predetermined thickness on the bottom surface of the supporting plate 210. The first metal plating layer a is formed of a conductive metal material having a predetermined resistance value. According to an embodiment of the present invention, the first metal plating layer a may be formed of nickel or a nickel-mixed metal material. Or, the first metal plating layer a may be formed of a NiP material. The first metal plating layer a has the same resistance value in each area of the pattern of the heater 220.

(26) The anti-oxidation layer b is thinly formed on the first metal plating layer a along the pattern of the heater 220. The anti-oxidation layer b blocks the first metal plating layer a from being exposed to air to prevent the oxidation of the first metal plating layer a. The anti-oxidation layer b is formed of a metal material having a less resistance value than the first metal plating layer a. The anti-oxidation layer b may be formed of an Au material. The anti-oxidation layer b may have a very thinner thickness than the first metal plating layer a, and has a less resistance value than the first metal plating layer a. Therefore, the anti-oxidation layer b may less affect the amount of an entire heating value of the heater 220.

(27) The second metal plating layer c is formed on the anti-oxidation layer b in the non-heating area 222. According to an embodiment of the present invention, the second metal plating layer c is formed on the anti-oxidation layer b at the terminal part 221. The second metal plating layer c is formed at a thicker thickness than the first metal plating layer a and the anti-oxidation layer b. The second metal plating layer c is formed of a metal material having a less resistance value than the first metal plating layer a. The second metal plating layer c may be formed of the same material as the anti-oxidation layer b. The second metal plating layer c may be formed of an Au material. Since the second metal plating layer c is thick, a partial resistance of the pattern of the heater 220 having the second metal plating layer c is close to 0. Thus, an area having the second metal plating layer c is provided as the non-heating area 222 where no heat is generated.

(28) According to the above-mentioned embodiment of the present invention, although it is described that the terminal part 221 corresponds to a non-heating area having the second metal plating layer c, the second metal plating layer c may be formed in the heating area 221 providing heat from the terminal part 221 to a desired pattern. In an area of the pattern of the heater 220, the second metal plating layer c may be formed in an area where heat is to be prevented.

(29) FIG. 4 is a view illustrating a supporting unit according to another embodiment of the present invention.

(30) Referring to FIG. 4, the bottom surface of the supporting plate 210 may be divided into a plurality of areas according to an area having a heater pattern. According to an embodiment of the present invention, the bottom surface of the supporting plate 21 may be divided into four areas, and for convenience of description, the four areas are referred to as first to fourth areas 211 to 214. The first area 211 is positioned symmetric to the second area 212 on the basis of the center of the supporting plate 210, and the third area 213 is positioned symmetric to the fourth area 214. A heater pattern is provided in each area. For further understanding, a first pattern 230 in the first area 211 and a second pattern 240 in the second area 212 are shown in FIG. 4.

(31) The first pattern 230 and the second pattern 240 form heater patterns separated from each other. The terminal part 231 to which external current is applied is provided to only the first pattern 230. In order to deliver a current applied to the first pattern 230 to the second pattern 240, a connection pattern 250 is provided. The connection pattern 250 connects a connection terminal 232 of the first pattern 230 to a connection terminal 241 of the second pattern 240. According to an embodiment of the present invention, the connection pattern 250 connects the first pattern 230 and the second pattern 240, passing through the third area 213 and the fourth area 214. Since the connection pattern 250 is provided only for applying current from the first pattern 230 to the second pattern 240, it is required not to affect a temperature distribution of the substrate W. Since the connection pattern 250 is locally provided to the supporting plate 210, when heat occurs from the connection pattern 250, only a portion of the substrate W are heated. Therefore, the connection pattern 250 is required to be provided to a non-heating area where no heat occurs. Thus, the connection pattern 250 may have a structure in which a first metal plating layer a1, an anti-oxidation layer b2, and a second metal plating layer c1 are sequentially applied on the bottom surface of the supporting plate 210 as shown in FIG. 5. The first metal plating layer a1, the anti-oxidation layer b2, and the second metal plating layer c1 are formed of the same materials as those in the embodiment of FIG. 3. Since the second metal plating layer c3 has a relatively thick thickness, the total resistance of the connection pattern 250 is close to 0. Due to this, since almost no heat is generated in the connection pattern 250, the connection pattern 250 minimally affects a temperature distribution of the substrate W.

(32) FIG. 6 is a view illustrating a supporting unit according to another embodiment of the present invention.

(33) Referring to FIG. 6, a non-heating area 280 may be provided in various forms at the bottom surface of the supporting plate 210. According to an embodiment of the present invention, the non-heating area 280 may be provided in a star-like shape. As shown in FIG. 5, the first metal plating layer a1, the anti-oxidation layer b1, and the second metal plating layer c1 are sequentially applied at the bottom surface of the supporting plate 210 in the non-heating area 280. The second metal plating layer c1 is provided at a relatively thick thickness. The shape of the non-heating area 280 is not limited to the above, and may be determined according to the position and shape of each area of a substrate controlling temperature.

(34) FIG. 7 is a flowchart illustrating a process of manufacturing a supporting unit according to an embodiment of the present invention. FIGS. 8 to 12 are views illustrating a process of manufacturing a supporting unit according to the flowchart of FIG. 7.

(35) Referring to FIGS. 7 to 12, the method of manufacturing a supporting unit includes forming a first metal plating layer pattern in operation S100, forming an anti-oxidation layer pattern in operation S200, and forming a second metal plating layer in operation S300.

(36) The forming of the first metal plating layer pattern in operation S100 is forming a first metal plating layer pattern at the bottom surface of the supporting plate 210. A catalyst applying process, an electroless plating process, and a pattern forming process are sequentially performed.

(37) The catalyst applying process is a process for applying a catalyst on the surface of the supporting plate 210 and is performed after a cleaning process on the surface of the supporting plate 210 is completed. The catalyst is a metal material and is applied on an entire bottom area of the supporting plate 210. Plating is performed only in an area where a catalyst is applied.

(38) After the catalyst is applied, a first metal plating layer is applied. The first metal plating layer is formed through an electroless plating method. The electroless plating method is a process of precipitating metal on a surface of an object to be processed by reducing metal ions in a metallic salt solution by using the strength of a reducing agent through a self-catalytic method, instead of receiving electrical energy from the outside. Since metal is slowly precipitated on the surface of the object to be processed in the electroless plating process, the first metal plating layer may be applied at a thin thickness. The first metal plating layer is applied to an area where the catalyst is applied, i.e., an entire bottom area of the supporting plate 210.

(39) The pattern forming process removes areas other than areas corresponding to a pattern in an area of the first metal plating layer. The pattern forming process may be accomplished through a photolithography process and its detailed description is omitted. Once the pattern forming process is completed, as shown in FIG. 8, a first metal plating layer pattern a is formed at the bottom surface of the supporting plate 210.

(40) The forming of the anti-oxidation layer pattern in operation S200 form an anti-oxidation layer b on the first metal plating layer pattern a. The forming of the anti-oxidation layer pattern in operation S200 is performed through an electroless plating method. Since the first metal plating layer pattern a serves as a catalyst, the anti-oxidation layer b is applied on only the surface of the first metal plating layer pattern a. As shown in FIG. 9, the anti-oxidation layer b is applied on an entire area of the first metal plating layer pattern a, by using the same pattern as the first metal plating layer pattern a. The anti-oxidation layer b is very thinly applied on the first metal plating layer pattern a so as to prevent the first metal plating layer pattern a from being exposed to air.

(41) The forming of the second metal plating layer in operation S300 is a process of forming a second metal plating layer c in the area of the anti-oxidation layer pattern b corresponding to a non-heating area and including a mask applying process, an electrolytic plating process, and a mask removing process.

(42) The mask applying process, as shown in FIG. 10, applies a mask m in the area of the anti-oxidation layer b where no second metal plating layer c is required. The mask m prevents the second metal plating layer c from being formed on the anti-oxidation layer b. The mask m may be provided in a tape form and may be detachable.

(43) Once the mask m is applied, a second metal plating layer c is formed through an electrolytic plating method. The electrolytic plating method is a process of applying a layer of another metal on a metal surface through the principle of electrolysis, and may apply a metal layer at a faster speed, compared to an electroless plating method. The second metal plating layer c is not applied in an area where the mask m is applied, as shown in FIG. 11, and is applied on the anti-oxidation layer b in an area where no mask m is applied. The second metal plating layer c is applied at a thicker thickness than the anti-oxidation layer b. Since the second metal plating layer c is applied through an electrolytic plating method, a time for application may be short.

(44) Once the second metal plating layer c is completely applied, the mask m is removed as shown in FIG. 12.

(45) FIG. 13 is a flowchart illustrating a process of manufacturing a supporting unit according to an embodiment of the present invention. FIGS. 14 to 18 are views illustrating a process of manufacturing a supporting unit according to the flowchart of FIG. 13.

(46) Referring to FIGS. 13 to 18, the method of manufacturing a supporting unit includes forming a first metal plating layer pattern in operation S100, forming a second metal plating layer in operation S200, and forming an anti-oxidation layer patter in operation S300.

(47) The forming of the first metal plating layer pattern in operation S100 forms a first metal plating layer pattern a on the bottom surface of the supporting plate 210 as shown in FIG. 14. Since the forming of the first metal plating layer pattern in operation S100 is identical to the forming of the first metal plating layer pattern in operation S100, its detailed description is omitted.

(48) The forming of the second metal plating layer in operation S200 is a process of forming a second metal plating layer b on the pattern area of the first metal plating layer pattern a corresponding to a non-heating area and including a mask applying process, an electrolytic plating process, and a mask removing process.

(49) The mask applying process, as shown in FIG. 15, applies a mask m in the area of the first metal plating layer pattern a where no second metal plating layer b is required. The mask m prevents the second metal plating layer b from being formed on the first metal plating layer pattern a. The mask m may be provided in a tape form and may be detachable.

(50) Once the mask m is applied, a second metal plating layer b is formed through an electrolytic plating method. The second metal plating layer b is not applied in an area where the mask m is applied, as shown in FIG. 16, and is applied on the first metal plating layer pattern a in an area where no mask m is applied. The second metal plating layer b is applied at a predetermined thickness

(51) Once the second metal plating layer b is completely applied, the mask m is removed as shown in FIG. 17.

(52) The forming of the anti-oxidation layer patter in operation S300 forms an anti-oxidation layer pattern c on the first metal plating layer pattern a and the second metal plating layer b. The forming of the anti-oxidation layer pattern in operation S300 is performed through an electroless plating method. Since the first metal plating layer pattern a and the second metal plating layer b serve as a catalyst, the anti-prevention layer c, as shown in FIG. 18, is separately applied on the surface of the first metal plating layer pattern a and the surface of the second metal plating layer b. The anti-oxidation layer c is applied at a very thin thickness and prevents the first metal plating layer pattern a and the second metal plating layer b from being exposed to air.

(53) The supporting unit may be provided during a bake process. Additionally, the supporting unit may be applied to various processes for heating a substrate at a predetermined temperature and processing it.

(54) Furthermore, a substrate provided to a treatment process may include a wafer for semiconductor production and a substrate for flat display panel production.

(55) According to embodiments of the present invention, since heat is generated in a desired area of a heater pattern, each area of a substrate is heated uniformly.

(56) According to embodiments of the present invention, a thickness of a metal layer used for forming a hater pattern is adjusted by each area through a method of manufacturing a supporting unit.

(57) The above-disclosed subject matter is to be considered illustrative, and not restrictive, and the appended claims are intended to cover all such modifications, enhancements, and other embodiments, which fall within the true spirit and scope of the present invention. Thus, to the maximum extent allowed by law, the scope of the present invention is to be determined by the broadest permissible interpretation of the following claims and their equivalents, and shall not be restricted or limited by the foregoing detailed description.