Organic semiconductive component

Abstract

A semiconductive component with a layer system includes at least one layer comprising a compound of the general formula (I) or (II). ##STR00001##

Claims

1. A semiconductive component having a layer system wherein at least one layer comprises a compound of formula I or II ##STR00017## where: R1 and R2 and/or R6 and R7, in each case together, form a heterocyclic 5-membered ring or 6-membered ring having at least one heteroatom selected from S, O, N and P, or a homocyclic 6-membered ring having no further fusion, and R1 and R2 or R6 and R7 are independently an H or another radical if they do not form a heterocyclic or homocyclic ring, R3, R4 and R5 are independently H or a radical selected from aryl, alkyl, fluorinated or partly fluorinated alkyl, unsaturated alkyl, and R8 and R9 are independently selected from halogen, alkyl, fluorinated or partly fluorinated alkyl, alkenyl, alkynyl, alkoxy, aryl or heteroaryl.

2. The semiconductive component as claimed in claim 1, where R1 and R2 and/or R6 and R7, in each case together, form a heterocyclic 5-membered ring or 6-membered ring having at least one heteroatom selected from S, O, N and P.

3. The semiconductive component as claimed in claim 1, where R1 and R2 and R6 and R7, in each case together, form a heterocyclic 5-membered ring or 6-membered ring having at least one heteroatom selected from S, O, N and P.

4. The semiconductive component as claimed in claim 1, where R4 is selected from aryl, alkyl, fluorinated or partly fluorinated alkyl or unsaturated alkyl.

5. The semiconductive component as claimed in claim 1, wherein the compound has a molar mass of 300-1500 g/mol.

6. The semiconductive component as claimed in claim 1, wherein the component comprises an optoelectronic component.

7. The semiconductive component as claimed in claim 1, wherein the layer comprising at least one compound of the general formula I or II is a light-absorbing layer.

8. The semiconductive component as claimed in claim 1, wherein at least one doped, partly doped or undoped charge carrier transport layer is present in the layer system as well as the layer comprising at least one compound of the general formula I or II.

9. The semiconductive component as claimed in claim 7, wherein the light-absorbing layer is configured as a mixed layer composed of at least two different compounds with or without additional adjoining individual layer or as a double mixed layer or as a triple mixed layer.

10. The semiconductive component as claimed in claim 1, wherein the component is configured as a tandem cell or multiple cell.

11. The semiconductive component as claimed in claim 1, wherein the component is transparent or partly transparent, the component being transparent or partly transparent within a spectral range visible to the human eye.

12. A method of fabricating a semiconductive element comprising: use of a compound of formula I or II ##STR00018## where: R1 and R2 and/or R6 and R7, in each case together, form a heterocyclic 5-membered ring or 6-membered ring having at least one heteroatom selected from S, O, N and P, or a homocyclic 6-membered ring having no further fusion, and R1 and R2 or R6 and R7 are independently an H or another radical if they do not form a heterocyclic or homocyclic radical, R3, R4 and R5 are independently H or a radical selected from aryl, alkyl, fluorinated or partly fluorinated alkyl, unsaturated alkyl, and R8 and R9 are independently selected from halogen, alkyl, alkenyl, alkynyl, alkoxy, aryl or heteroaryl.

13. The method as claimed in claim 12, wherein the semiconductive element comprises a solar cell.

14. The semiconductive component as claimed in claim 4, where R4 is selected from fluorinated or partly fluorinated alkyl.

15. The semiconductive component as claimed in claim 6, wherein the component comprises a solar cell, an OFET or a photodetector.

Description

BRIEF DESCRIPTION OF THE DRAWING FIGURES

(1) The invention is to be elucidated in detail hereinafter with reference to some working examples and figures. The working examples are intended to describe the invention without restricting it. The figures show:

(2) FIG. 1 a schematic diagram of a semiconductive component,

(3) FIG. 2 a graph of an absorption spectrum of an inventive compound of the general formula II,

(4) FIG. 3 a graph of a spectral external quantum yield of an inventive compound of the general formula II in a semiconductive component and

(5) FIG. 4 a graph of the fill factor and the efficiency of an MIP component at different substrate temperatures.

DETAILED DESCRIPTION

Working Example

Compound (1)

(6) In one working example, an MIP component consisting of a sample on glass with a transparent ITO base contact (M), a layer of fullerene C.sub.60 (I), a 1:1 mixed layer of compound 1 with fullerene C.sub.60 (I), a p-doped hole transport layer composed of Di-NPB and NDP9 and a top contact of gold is produced, the mixed layer of compound 1 and C.sub.60 having been deposited at a substrate temperature of 110 C.

(7) ##STR00016##

(8) FIG. 2 shows the current-voltage curve of this component. The most important parameters are the fill factor FF of 66%, the open-circuit voltage UOC of 0.69 V and the short-circuit current jSC of 9.2 mA, and show a well-functioning solar cell.

(9) FIG. 3 shows the the diagram of the spectral external quantum yield, which is defined as the number of electrons cond.sub.60 and compound 1 are photoactive.

Working Example 2

(10) One MIP each as described in example 1 was produced at the following different substrate temperatures: 50 C., 70 C., 90 C. and 110 C. It can be seen from the graph in FIG. 4 that the fill factor and efficiency likewise rise with rising substrate temperature.