PROCESS FOR ACTIVATING A LAYER ON A GLASS SUBSTRATE

Abstract

A process for activating a layer supported by a glass substrate includes carrying out a heat treatment in a chamber of a stack of several examples of the glass substrate, the glass substrates being separated by an interlayer powder. The layer to be activated may be an ITO layer, or a titanium oxide layer, or an SiO.sub.2 layer, or a silver layer.

Claims

1. A process for activating a layer supported by a glass substrate comprising carrying out a heat treatment in a chamber of a stack of several examples of said glass substrate, said glass substrates being separated by an interlayer powder.

2. The process as claimed in claim 1, wherein the stack comprises 2 to 30 glass substrates.

3. The process as claimed in claim 1, wherein the stack rests in the chamber at least partially on the edge of its substrates.

4. The process as claimed in claim 1, wherein the stack rests on a trestle.

5. The process as claimed in claim 1, wherein 1 to 20 stacks are placed in the chamber.

6. The process as claimed in claim 1, wherein several stacks are placed in the chamber, two neighboring stacks being separated from one another by a distance of at least 1 cm.

7. The process as claimed in claim 1, wherein during the heat treatment, the chamber is stationary and any stack in the chamber is stationary.

8. The process as claimed in claim 1, wherein the glass substrates are heated at a sufficiently low temperature so that the mechanical properties of a glass sheet of the glass substrate are not modified.

9. The process as claimed in claim 8, wherein stresses in the glass and the impact behavior of the glass substrate are not modified by the heat treatment.

10. The process as claimed in claim 1, wherein the glass of the glass substrate is not tempered.

11. The process as claimed in claim 1, wherein the heat treatment comprises a temperature maximum below the strain point of the glass contained in the substrate.

12. The process as claimed in claim 1, wherein the heat treatment comprises a temperature maximum below 495 C.

13. The process as claimed in claim 12, wherein the temperature maximum is at least 200 C.

14. The process as claimed in claim 13, wherein the glass substrate is heated for at least 0.5 hour at a temperature of at least 300 C.

15. The process as claimed in claim 1, wherein the layer to be activated is deposited by magnetron sputtering, the heat treatment increasing its crystalline nature.

16. The process as claimed in claim 1, wherein the layer to be activated is an ITO layer, or a titanium oxide layer, or an SiO.sub.2 layer, or a silver layer.

17. The process as claimed in claim 1, wherein the heating is carried out by hot air convection in the chamber.

18. The process as claimed in claim 1, wherein the interlayer powder is based on calcium carbonate or silicate and has a D90 of less than 400 microns.

19. The process as claimed in claim 12, wherein the temperature maximum is below 450 C.

20. The process as claimed in claim 13, wherein the temperature maximum is at least 300 C.

21. The process as claimed in claim 14, wherein the glass substrate is heated for at least 1 hour at a temperature of at least 300 C.

22. The process as claimed in claim 18, wherein the D90 is less than 200 microns.

Description

[0045] FIG. 1 shows a chamber 1 inside which a trestle 2 bearing several stacks 3 of glass substrates is positioned. A space 4 allows air to circulate between two neighboring stacks. The stacks are held in place owing to spacers 5 that allow the air to circulate.

[0046] FIG. 2 gives an example of a temperature profile that may be applied to the stacked glass substrates. The temperature of a glass substrate is given on the y-axis and the time on the x-axis. The temperature Sp is the strain point, that is to say the lower annealing temperature that the temperature profile must not exceed in order to avoid modifying the mechanical properties of the glass. In this example, a temperature hold having a duration D.sub.p is applied at the temperature maximum M.sub.T. The layer is essentially activated during the activation duration D.sub.a, during which the substrate is above a minimum activation temperature T.sub.m.