RESONANT MICROELECTROMECHANICAL SENSOR WITH IMPROVED OPERATION

Abstract

A resonant sensor including a support, a proof body suspended from the support and having a resonant frequency ωa, means for measuring a force including at least one resonator of resonant frequency ω.sub.rn, said force being applied by the proof body, and a mechanical decoupling structure interposed between the proof body and the resonator, said decoupling structure including a decoupling mass, a first connecting element between the decoupling mass and the proof body, a second connecting element between the decoupling mass and the resonator, the decoupling structure having a main vibration mode whose resonant frequency ω.sub.d is such that ωa <ω.sub.d< ω.sub.rn, said decoupling structure forming a mechanical low-pass filter between the proof body and the resonator.

FIG. 1

Claims

1. A resonant sensor including a support, a proof body suspended from the support and having a resonant frequency ωa, means for measuring a force including at least one resonator of resonant frequency ω.sub.rn, said force being applied by the proof body, and a mechanical decoupling structure interposed between the proof body and the resonator, said decoupling structure including a decoupling mass, a first connecting element between the decoupling mass and the proof body, a second connecting element between the decoupling mass and the resonator, the decoupling structure having a main vibration mode whose resonant frequency ω.sub.d is such that ωa <ω.sub.d< ω.sub.rn, said mechanical decoupling structure forming a mechanical low-pass filter between the proof body and the resonator.

2. The resonant sensor according to claim 1, wherein ω.sub.d < 10×ω.sub.rn.

3. The resonant sensor according to claim 1, wherein the first connecting element has a stiffness kd1, wherein the proof body is suspended from the support by suspension means having a stiffness k.sub.a and wherein the ratio k.sub.a/k.sub.d1 is between 1 and 100.

4. The resonant sensor according to claim 1, wherein the resonator is directly anchored to the proof body and the first connecting element includes a spring.

5. The resonant sensor according to claim 1, wherein the decoupling mass is in the form of a beam which is rotatably hinged relative to the support about a direction normal to a plane of the sensor.

6. The resonant sensor according to claim 5, wherein the decoupling mass is directly anchored to the support through a longitudinal end.

7. The resonant sensor according to claim 1, wherein the decoupling structure includes means for suspending from the support.

8. The resonant sensor according to claim 1, wherein the proof body and the decoupling structure have a thickness of one or more tens of .Math.m and the resonator has a cross-section area in the order of a few hundred nm on each side.

9. The resonant sensor according to claim 1, including means for modifying stiffness of the first connecting element, and/or means for modifying stiffness of the second connecting element and/or means for modifying stiffness of the means for suspending the decoupling structure from the support.

10. The resonant sensor according to claim 1, comprising at least a first layer and a second layer, the first layer having a thickness of one or more tens of .Math.m and the second layer having a thickness of a few hundred nm on each side, wherein the proof body and the decoupling structure are made in the first layer and wherein the decoupling structure includes a third layer of a material different from that of the first layer.

11. The resonant sensor according to claim 1, including two differentially-mounted resonators, each resonator being connected to the proof body through a decoupling structure.

12. The resonant sensor according to claim 1, forming a resonant accelerometer, wherein the proof body is a seismic mass.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0027] The present invention will be better understood based on the following description and the appended drawings in which:

[0028] FIG. 1 is a schematic representation of a resonance accelerometer according to the invention.

[0029] FIG. 2 is a representation of the mechanical model of the resonant accelerometer of FIG. 1.

[0030] FIG. 3 is a top view of a practical embodiment of an accelerometer according to FIG. 1 implementing a differential measurement.

[0031] FIGS. 4A to 4F are schematic representations of decoupling means according to other exemplary embodiments.

[0032] FIG. 5 is a schematic representation of a resonant sensor according to the invention in which the proof body is movable in an out-of-plane direction.

DETAILED DESCRIPTION OF PARTICULAR EMBODIMENTS

[0033] In FIG. 1, a schematic representation of an example of an accelerometer according to the invention including a seismic mass 2 suspended from a support 4 or substrate and movable in the sensor plane relative to the support van be seen. The plane of the sensor is considered to be parallel to the support and forms a mean plane for the mass parallel to the larger faces of the mass. In the example represented, the mass 2 is movable along the X direction.

[0034] The accelerometer includes a resonator 6 formed by a beam with a nanometric cross-section, hereinafter referred to as a nanoresonator, which has a cross-section area much smaller than that of the mass and the springs, ideally more than an order of magnitude smaller than the cross-section area of the springs. The cross-section area of the nanoresonator is for example between a few tens of nm to 1 .Math.m on each side, for example the cross-section area can be between 25 nm × 25 nm and 2 .Math.m × 2 .Math.m. The nanoresonator is suspended through a first longitudinal end from the support 4 and through a second longitudinal end from the seismic mass 2 via decoupling means. The nanoresonator 6 extends along the X direction so that it is compressed or stretched upon moving the mass. The Y direction is contained in the plane and is orthogonal to the X direction.

[0035] The decoupling means hereinafter referred to as the “decoupling structure” S1 comprises a decoupling mass 8 suspended from the support through suspension means 10. In the example represented, the suspension means 10 includes two pairs of parallel beams 12, the beams 12 of each pair extending on either side of the decoupling mass 8 with respect to the X direction and along the Y direction. The decoupling mass 8 can then move in the X direction, with the beams 12 flexurally deforming.

[0036] The decoupling means also includes a first connecting element 14 connecting the decoupling mass 8 to the seismic mass 2, and a second connecting element 16 connecting the decoupling mass 8 and the nanoresonator 6.

[0037] In this example, the nanoresonator 6 is directly anchored to the decoupling mass 8 of the decoupling structure S1, so the second connecting element 16 can be considered rigid. The first connecting element 14 implemented is such that it is capable of elastic deformation and performs the function of a force-transmitting spring between the seismic mass 2 and the nanoresonator. In this example, the first connecting element 14 includes a rectangular-shaped frame 18, with the seismic mass 2 being directly connected to one long side 18.1 and the decoupling mass 8 being connected to the other long side 18.2, the long sides being capable of deformation in the X direction. This exemplary embodiment is not exclusive of other forms which will be described below.

[0038] In FIG. 2, a mechanical model of the accelerometer of FIG. 1 can be seen.

[0039] The suspended seismic mass 2 has a mass, the suspension means of the mass 2 are modelled by a spring R.sub.a having a stiffness k.sub.a between the mass 2 and the support. The nanoresonator is modelled by a spring R.sub.nr having a stiffness k.sub.nr. The decoupling mass 8 has a mass m.sub.d, the suspension means of the decoupling mass 8 is modelled by a spring R.sub.d2 having a stiffness k.sub.d2 between the decoupling mass 8 and the support 4 and the first connecting element 14 is modelled by a spring R.sub.d1 having a stiffness k.sub.d1 between the decoupling mass 8 and the seismic mass 2.

[0040] The decoupling structure acts as a resonator and filters frequencies above its resonant frequency ω.sub.d. From the model in FIG. 2, this resonant frequency can be calculated as:

[00001]${\omega }_d^2=\frac{k_{d2}+k_{d1}+k_{nr}}{m_d}$

[0041] The characteristics of the decoupling structure are chosen so that it transmits the low-frequency signals of the acceleration to be measured and actually filters spurious modes whose high frequencies may couple with the resonance mode of the nanoresonator. For this, the decoupling structure is made such that:

[00002]${\omega }_a<{\omega }_d<{\omega }_{nr}$

[0042] With ω.sub.a the natural frequency of the accelerometer and ω.sub.nr the natural frequency of the nanoresonator.

[0043] Preferably, 10 ω.sub.d.< ω.sub.nr is chosen.

[0044] Furthermore, the transfer function of the resonant accelerometer is given by the relationship between acceleration and stress applied to the nanoresonator designated σ.sub.nr and considering that the resonant frequency of the nanoresonator is proportional to its stress.

[0045] The transfer function can be written as:

[00003]$\frac{{\sigma }_{nr}}{a}=\frac{m_a}{S_{nr}}\left[\frac{k_{nr}}{k_{nr}+k_{d2}}\right]\left[\frac{k_{d1}}{k_a+k_{d1}}\right]$

[0046] With S.sub.nr being the transverse cross-section area of the nanoresonator.

[0047] If it is considered that the beams 12 of the decoupling structure have only a stability function, the stiffness k.sub.d2 of the set of beams 12 is negligible in comparison with the stiffness k.sub.nr of the nanoresonator, the transfer function can be approximated to:

[00004]$\frac{{\sigma }_{nr}}{a}\cong \frac{m_a}{S_{nr}}\left[\frac{k_{d1}}{k_a+k_{d1}}\right]$

[0048] It is noticed that the sensitivity of the resonant accelerometer is set by the ratio between stiffnesses k.sub.d1 and k.sub.a. Preferably, the values of these stiffnesses are chosen so that the accelerometer has a high sensitivity. The ratio K.sub.a/k.sub.d1 is advantageously less than 100 and preferably equal to or close to 1.

[0049] The resonant coupling structure may have resonance modes other than its main resonance mode at frequency ω.sub.d, which may interfere with the operating range of the nanoresonator and thus disturb operation of the accelerometer. The dimensioning of the different parts of the decoupling structure allows these interfering modes to be set so that they are outside the operating frequency range of the nanoresonator.

[0050] By way of example only, dimensioning of the decoupling structure and the resonant frequency values of its spurious modes will be given. The decoupling structure is the one shown in FIG. 1.

[0051] The seismic mass 2 and its suspension means are made in a 20 m thick Si layer; and the nanoresonator is made in a thinner layer of 0.25 m thickness.

[0052] The in-plane dimensions of the mass can be between 20 .Math.mx20 .Math.m and 50 .Math.m×50 .Math.m.

[0053] The nanoresonator has a cross-section area of 250 × 250 nm.sup.2 and a length of 10 .Math.m, which has a nanoresonator frequency range of 10 MHz-20 MHz during its operation as a sensor.

[0054] The decoupling structure is made in the 20 .Math.m silicon layer with the following dimensions: [0055] The square-shaped decoupling mass has sides of length L.sub.m2 = 20 .Math.m and a mass m.sub.2. [0056] The length of the beams 12 is L.sub.f2 = 20 .Math.m is the length of the elements, and their width is w.sub.f2=1 .Math.m. [0057] The first connecting element 14 includes two arms of length L.sub.c1 = 50 .Math.m and width w.sub.c1 = 1 .Math.m, connected at their ends by square masses of side length L.sub.mc1 = 5 .Math.m and mass m.sub.c1. [0058] The filtering resonant frequency ω.sub.d is 1.7 MHz. The decoupling structure has spurious frequencies of 0.5 MHz and 22 MHz. These frequencies do not interfere with the operating range of 10 MHz - 20 MHz for the nanoresonator.

[0059] In FIG. 3, a practical example of a resonant accelerometer implementing the decoupling structure S1 can be seen.

[0060] The accelerometer includes two differentially-mounted nanoresonators 6, each nanoresonator being connected to the seismic mass 2 via the decoupling structure S1. The seismic mass is suspended from the support by four U-shaped springs 20. These four springs are modelled by the spring having a stiffness ka in the model in FIG. 2.

[0061] In the example represented, the decoupling mass 8 of the decoupling structure S1 is suspended through four beams 12. According to another example represented in FIG. 4A, the decoupling mass 108 is suspended through more flexible supports 112 than the beams 12, for example U-shaped or Z-shaped supports. Further, more or less than four supports may be implemented.

[0062] Still alternatively, no support is implemented and the decoupling mass 8 is suspended through its connection to the accelerometer mass and through its connection to the nanoresonator.

[0063] Further, in another exemplary embodiment, the nanoresonator is not directly anchored to the decoupling mass, and the second connecting element 16 between the mass of the decoupling means and the nanoresonator may have some flexibility and for example be similar to the first connecting element 14 of FIG. 1.

[0064] In FIG. 4B, another exemplary embodiment of a decoupling structure S2 can be seen, in which the connection 216 between the nanoresonator 206 and the decoupling structure is not mechanical but electrostatic. The decoupling structure and the nanoresonator are then configured to have a strong capacitive coupling therebetween. In this example, the nanoresonator 206 is oriented orthogonally to the axis X and in parallel to and facing a face of the decoupling mass 208. Thus, by applying a potential difference between the mass 208 and the nanoresonator 206, a capacitive coupling between the nanoresonator 206 and the face of the mass 208 is generated. This coupling ensures stress transmission from the seismic mass 202 to the nanoresonator 206. Furthermore, it allows the nanoresonator to be prestressed. The connecting element 214 between the seismic mass 202 and the decoupling mass 28 may be replaced with an electrostatic connection.

[0065] According to another exemplary embodiment of a decoupling structure S3 represented in FIG. 4C, the first connecting element 314 between the decoupling mass 308 and the seismic mass 302 is formed by a beam having a higher stiffness than the first connecting element 14 of FIG. 1. Nevertheless, such a beam has some flexibility that has to be taken into account in modelling the decoupling structure. This example has the advantage of reducing signal losses in comparison with a more flexible connecting element.

[0066] In a MEMS&NEMS system, for example a resonant accelerometer, the seismic mass of the accelerometer is made in a thick material layer, for example of silicon, for example 20 .Math.m thick and the nanoresonator is made in a much thinner material layer, for example of silicon nitride, for example 0.25 .Math.m thick. Preferably, the decoupling structure can be made in the thick layer as the seismic mass and have the same thickness. A decoupling structure made in the much thinner layer does not depart from the scope of the invention, however, it may have a significant number of spurious modes at the nanoresonator frequency.

[0067] Preferably, the seismic mass has larger in-plane dimensions than the decoupling structure to limit the occurrence of spurious modes of the decoupling means in the frequency range of the nanoresonator. Preferably, the surface area of the seismic mass is at least 10 times larger than that of the decoupling structure.

[0068] Alternatively, the decoupling structure is made in the thick layer, and is then thinned to a thickness intermediate between the thickness of the seismic mass and the nanoresonator. This may allow more freedom to set the resonant frequency of the decoupling structure and increase the sensitivity of the sensor in comparison with an unthinned structure.

[0069] In one exemplary embodiment, the decoupling structure and the seismic mass may be made of the same material, for example silicon. A layer of a different material may be deposited on the decoupling structure for altering mechanical properties of the decoupling structure, for example stiffnesses of the connecting and suspension elements.

[0070] In another example, the decoupling structure is made of a different material than the seismic mass which allows, while keeping the same dimensions of the decoupling structure, a decoupling mass with a larger or smaller mass and/or more or less rigid connecting and/or suspension elements. Making the decoupling structure in a different material may for example include etching the MEMS layer, depositing, for example by sputtering, a selective material onto the desired zone for forming the decoupling structure and then depositing the decoupling structure material onto the desired zone.

[0071] In another example, the decoupling structure is made in the layer in which the nanoresonator is made.

[0072] This example allows more flexible supports and a more flexible second connecting element 16 to be made due to their smaller dimensions. Furthermore, the decoupling mass 8 has a reduced mass.

[0073] This may also allow for more freedom in setting the resonant frequency of the decoupling structure.

[0074] In FIG. 4D, another exemplary embodiment of a decoupling structure S4 can be seen, wherein the first connecting element 414 between the seismic mass 402 and the decoupling mass 408 includes a beam oriented along the Y-direction, along which the nanoresonator 406 is aligned, the beam is embedded through one end to the seismic mass and through another end to the decoupling mass 408. The beam has flexibility in the X direction and is rigid in the Y direction. More generally, the connecting element 414 is flexible in a direction orthogonal to the axis of the nanoresonator and rigid in the axis of the nanoresonator allowing greater freedom in the relative arrangement of the seismic mass and the decoupling structure.

[0075] In FIG. 4E, a further exemplary embodiment of a decoupling structure S5 can be seen, in which the decoupling mass 508 includes a beam suspended from the support so as to be rotatably movable in the X-Y plane. In this example, the decoupling mass 508 extends along the Y direction and the nanoresonator 506 is anchored to a longitudinal end 508.1 of the decoupling mass 508. The seismic mass 502 is connected to the other longitudinal end 508.2 of the decoupling mass 508 through a serpentine-shaped connecting element 514. Two beams 522 aligned along the Y-direction and anchored to the decoupling mass 508 in proximity to the end 508.1 form a pivot connection. For example, serpentine-shaped suspension means 512 suspend the decoupling mass 508 from the support 504 at the end 508.2. In this example, the decoupling mass does not deform during operation of the accelerometer.

[0076] In FIG. 4F, another exemplary embodiment of a decoupling structure S6 can be seen, which differs from structure S5 in FIG. 4E, in that the decoupling mass 608 is directly anchored to the support 604 by its end 608.1 and flexurally deforms during operation of the accelerometer. The nanoresonator 606 is anchored to the beam at its end 608.1. In this example, a support 604 for the decoupling mass 608 is not required, as the anchoring of the decoupling mass 608 provides support.

[0077] In one advantageous embodiment, the decoupling structure is such that it allows adjustment of its resonant frequency and possibly of the spurious modes of the decoupling structure. The structure has means for modifying stiffness of the first connecting element between the decoupling mass and the seismic mass, and/or stiffness of the second connecting element between the decoupling mass and the nanoresonator, and/or the stiffness of the means for suspending the decoupling mass from the support. Such an adjustment of the decoupling structure allows a resonant sensor with several operating ranges to be made.

[0078] For example, the stiffness adjustment means may be of the piezoelectric type. For example, the connecting elements and/or the suspension elements include a layer of piezoelectric material, and the rigidity of these elements can be modified by choosing intensity of the electric current flowing in this layer. The stiffness of each element can be adjusted separately. This adjustment can be made at the factory, thereby making a single sensor structure that is then adapted to different applications, or it can be made during operation of the accelerometer depending on external conditions. Alternatively, the adjustment means are, in a non-limiting way, of the thermal/thermoelectric or electrostatic type.

[0079] The present invention is also applicable to a resonant sensor in which the proof body 702 is movable in an out-of-plane direction relative to the support 704 as depicted in FIG. 5. The decoupling structure S7 is for example disposed between the resonator 706 and the proof body 702.

[0080] The resonant sensor according to the invention is manufactured using micro&nanomicroelectromechanical systems (M&NEMS) manufacturing techniques.

[0081] For example, it can be manufactured using the method described in document WO201148138.

[0082] The present invention is particularly adapted to the production of resonant accelerometers, allowing to obtain a relatively high dynamic range and a relatively wide frequency range.

[0083] The invention can be applied to making other resonant sensors, such as resonant force sensors, as for example pressure sensors, flow meters, magnetometers. The invention is especially advantageous in the case of sensors with a very wide dynamic range, which implies a wide frequency range of the nanoresonator, and consequently a high probability of having spurious modes present in this range.