Lithium-Tellurium Silicon-Lead Bismuth Multi-component Glass-Oxide-Complex System and Conductive Paste Containing Same

Abstract

The present disclosure discloses a lithium-tellurium silicon-lead bismuth multi-component glass-oxide-complex system and conductive paste containing same, belonging to the technical field of solar cells. According to the present disclosure, a “functional modularization” strategy is adopted in a formula design of the glass-oxide-complex system, and glass oxide systems with selective reactivity for different passivation layers are compounded based on the structures, compositions and thicknesses of the passivation layers, so that a paste formula is developed, which is composed of lithium-containing, tellurium-silicon-containing and lead-containing glass oxides. Due to adoption of the modularized formula strategy, active ingredients can be better controlled, and the overall paste formula is more optimized, so that the laminated passivation layers can be selectively burned through to obtain a more balanced contact, and better battery performance on silicon wafers with different passivation layer thicknesses can be achieved, thus achieving excellent photoelectric conversion efficiency.

Claims

1. A lithium-tellurium silicon-lead bismuth multi-component glass-oxide-complex system for solar cell conductive paste, wherein the system is prepared by mixing a lithium-containing glass-oxide-complex (A-GOC), a tellurium silicon-containing glass-oxide-complex (T-GOC), a lead bismuth-containing glass-oxide-complex (L-GOC), and a balanced phase glass-oxide-complex (D-GOC), wherein the lithium-containing glass-oxide-complex (A-GOC) is obtained by mixing and melting Li.sub.2O, Bi.sub.2O.sub.3, PbO and a metal oxide M1 to form a glass-oxide frit, then quenching, and grinding; the lead bismuth-containing glass-oxide-complex (L-GOC) is obtained by mixing and melting PbO, Bi.sub.2O.sub.3, SiO.sub.2, Al.sub.2O.sub.3, ZnO and B.sub.2O.sub.3 to form a glass-oxide frit, then quenching, and grinding; and based on the total mass of the L-GOC, a formula of the L-GOC comprises: 2-50% by mass of PbO, 5-85% by mass of Bi.sub.2O.sub.3, 2-10% by mass of SiO.sub.2, 0.5-15% by mass of Al.sub.2O.sub.3, 0-6% by mass of ZnO, and 0.5-25% by mass of B.sub.2O.sub.3; the tellurium silicon-containing glass-oxide-complex (T-GOC) is obtained by mixing and melting SiO.sub.2, TeO.sub.2 and a metal oxide M3 to form a glass-oxide frit, then quenching, and grinding; the balanced phase glass-oxide-complex (D-GOC) is obtained by mixing and melting one or more metal oxides used in the A-GOC, the L-GOC and the T-GOC to form a glass-oxide frit, then quenching, and grinding; the metal oxide M1 is an oxide of at least one of Na, K, Mg, Ca, Sr, Ba, Zn, P, B, Ti, Sb, and Ge; and the metal oxide M3 is an oxide of at least one of Na, Zn, P, B, Ag, Al, Ti, W, V, Cr, Mn, Co, Ni, Cu, Nb, Ta, Th, Ge, Mo, La, Sb, Bi, and Ce.

2. The lithium-tellurium silicon-lead bismuth multi-component glass-oxide-complex system according to claim 1, wherein the system is composed of the multiple GOCs separated from each other: the A-GOC, the L-GOC, the T-GOC and the D-GOC; the A-GOC accounts for 0.1-50% by mass in the lithium-tellurium silicon-lead bismuth multi-component glass-oxide-complex system; the L-GOC accounts for 5-30% by mass in the lithium-tellurium silicon-lead bismuth multi-component glass-oxide-complex system; the T-GOC accounts for 20-90% by mass in the lithium-tellurium silicon-lead bismuth multi-component glass-oxide-complex system; and the D-GOC accounts for 0-20% by mass in the lithium-tellurium silicon-lead bismuth multi-component glass-oxide-complex system.

3. The lithium-tellurium silicon-lead bismuth multi-component glass-oxide-complex system according to claim 1, wherein a formula of the A-GOC is as follows:
[Li.sub.2O].sub.a1—[SiO.sub.2—Bi.sub.2O.sub.3].sub.b1-[M1O.sub.n1].sub.c1, wherein a1, b1 and c1 are respectively mass fractions in the A-GOC of corresponding oxides in the A-GOC; a1+b1+c1=100%, 2%<a1<50%, 43%<b1<85%, 1%<c1<10%; and the value of n1 is used for balancing positive and negative charges of the whole formula.

4. The lithium-tellurium silicon-lead bismuth multi-component glass-oxide-complex system according to claim 1, wherein a formula of glass or crystalline oxides containing tellurium and silicon in the T-GOC is as follows:
[TeO.sub.2].sub.a3—[SiO.sub.2].sub.b3-[M3O.sub.n3].sub.c3, wherein a3, b3 and c3 are respectively mass fractions in the T-GOC of corresponding oxides in the T-GOC; a3+b3+c3=100%, 10%<a3<80%, 10%<b3<80%, 1%<c3<10%; and the value of n3 is used for balancing positive and negative charges of the whole formula.

5. The lithium-tellurium silicon-lead bismuth multi-component glass-oxide-complex system according to claim 1, wherein based on the total mass of the A-GOC, the formula of the A-GOC comprises: 15-25% by mass of Li.sub.2O, 50-70% by mass of PbO, 10-20% by mass of Bi.sub.2O.sub.3, 0-6% by mass of ZnO, and 0.5-3% by mass of B.sub.2O.sub.3.

6. The lithium-tellurium silicon-lead bismuth multi-component glass-oxide-complex system according to claim 1, wherein based on the total mass of the T-GOC, the formula of the T-GOC comprises: 10-20% by mass of SiO.sub.2, 60-80% by mass of TeO.sub.2, 2-20% by mass of Bi.sub.2O.sub.3, 0.5-2% by mass of B.sub.2O.sub.3, and 0.5-2% by mass of Na.sub.2O.

7. The lithium-tellurium silicon-lead bismuth multi-component glass-oxide-complex system according to claim 1, wherein based on the total mass of the D-GOC, a formula of the D-GOC comprises: 35-50% by mass of SiO.sub.2, 20-30% by mass of PbO, 2-10% by mass of MgO, 0.5-2% by mass of TiO.sub.2, and 25-40% by mass of Bi.sub.2O.sub.3.

8. Conductive paste containing the lithium-tellurium silicon-lead bismuth multi-component glass-oxide-complex system according to claim 1.

Description

BRIEF DESCRIPTION OF FIGURES

[0058] FIG. 1 is a schematic diagram of a structure of a solar cell.

DETAILED DESCRIPTION

Example 1

[0059] Preparation of a Glass-Oxide-Complex (GOC) System:

[0060] Different A-GOC1, L-GOC1, T-GOC1, and D-GOC1 were prepared from the components described in Table 1 below, and a single component Mix1 without separation was also prepared as a control. Samples were prepared in batches of 200 g by mixing the individual oxide components in the amounts specified in Table 1. The oxide mixture was put into a 0.5 L platinum crucible, and then the crucible was put into a glass melting furnace at 1,300° C. for 30 minutes to obtain a glass and oxide frit. The frit was taken out and poured into a twin-roll cooler for quenching to obtain glass slag. After being ground in a 1 L planetary ball mill, the glass slag was sieved with a 325-mesh sieve to obtain A-GOC1 powder, L-GOC1 powder, T-GOC1 powder, D-GOC1 powder, and Mix1 powder, respectively.

TABLE-US-00001 TABLE 1 Formulas of A-GOC1, L-GOC1, T-GOC1, D-GOC1 and Mix1 Mix1 A-GOC1 L-GOC1 T-GOC1 D-GOC1 A-GOC Li.sub.2O 6.04% 19.36% / / / PbO 18.20%  58.31% / / / Bi.sub.2O.sub.3 4.87% 15.60% / / / ZnO 1.80%  5.77% / / / B.sub.2O.sub.3 0.30%  0.96% / / / L-GOC PbO 0.57% /  2.19% / / Bi.sub.2O.sub.3 16.39%  / 63.02% / / Al.sub.2O.sub.3 2.83% / 10.88% / / SiO.sub.2 0.57% /  2.19% / / B.sub.2O.sub.3 5.65% / 21.72% / / T-GOC SiO.sub.2 6.07% / / 14.95% / TeO.sub.2 27.27%  / / 67.14% / Bi.sub.2O.sub.3 6.07% / / 14.95% / B.sub.2O.sub.3 0.60% / /  1.48% / Na.sub.2O 0.60% / /  1.48% / D-GOC SiO.sub.2 1.00% / / / 46.08% PbO 0.50% / / / 23.04% MgO 0.05% / / /  2.31% TiO.sub.2 0.02% / / /  0.92% Bi.sub.2O.sub.3 0.60% / / / 27.65%

[0061] Preparation of Conductive Paste:

[0062] A list of components used in the following examples and control examples is as follows:

[0063] (1) conductive powder: spherical silver powder (AG-4-8, Dowa HighTech Co., Ltd.) with an average particle size (D50) of 2 μm;

[0064] (2) a glass and oxide complex GOC: Mix1, or a multi-component mixture of A-GOC1, L-GOC1, T-GOC1, and D-GOC1;

[0065] (3) an organic carrier:

[0066] a binder: ethyl cellulose (Dow Chemical Co., Ltd., STD4); a solvent: terpineol (Nippon Terpine Co., Ltd.); and a thixotropic agent: DISPARLON 6500 (Kusumoto Chemicals, Ltd.).

[0067] 1 wt % of ethyl cellulose and 0.6 wt % of a thixotropic agent were fully dissolved in 6 wt % of terpineol at 50° C.; and 90 wt % of Ag powder and 2.4 wt % of GOC were added into the obtained solution and mixed uniformly, and the obtained mixture was then mixed and dispersed by using a three-roll mixer to obtain metallized silver paste P0-1, and P1-P4.

[0068] Under the premise of keeping the other components unchanged, only the GOC content was increased to 2.5 wt %, uniform mixing was carried out, and the obtained mixture was then mixed and dispersed by using the three-roll mixer to obtain metallized silver paste P0-2, and P5-P8.

[0069] Under the premise of keeping the other components unchanged, only the GOC content was increased to 2.6 wt %, uniform mixing was carried out, and the obtained mixture was then mixed and dispersed by using the three-roll mixer to obtain metallized silver paste P0-3, and P9-P12.

[0070] Under the premise of keeping the other components unchanged, only the GOC content was increased to 3 wt %, uniform mixing was carried out, and the obtained mixture was then mixed and dispersed by using the three-roll mixer to obtain metallized silver paste P0-4, and P13-P16.

[0071] Under the premise of keeping the other components unchanged, only the GOC content was increased to 4.2 wt %, uniform mixing was carried out, and the obtained mixture was then mixed and dispersed by using the three-roll mixer to obtain metallized silver paste P0-5, and P17-P20.

[0072] 80 mg of each type of metallized silver paste and 600 mg of aluminum paste were printed on the front and back sides of silicon wafers with different passivation layer thicknesses in predetermined patterns by means of silk-screen printing, and dried in an infrared drying oven. The silicon wafers were rapidly sintered in a rapid sintering furnace at 900° C. for 30 minutes and cooled to room temperature, thereby preparing a solar cell.

[0073] The structure of the obtained solar cell is shown in FIG. 1. The metallized silver paste was sintered to form a front electrode, and the aluminum paste was sintered to form a back partial contact. The structure of a pure silicon wafer includes: front SiN.sub.x-silicon wafer-Al.sub.2O.sub.3-back SiN.sub.x.

[0074] The performance of the solar cell was tested and characterized by using EL images through an EL tester. The foggy black (foggy blackening with light darkness) of the cell was expressed as: serious which referred to that a foggy black area was greater than 20% of a total area of cells; general which referred to that 10% of the total area of the cells was less than or equal to the foggy black area, and the foggy black area was less than or equal to 20% of the total area of the cells; acceptable which referred to slight foggy black, where the foggy black area was less than 10% of the total area of the cells; and excellent which referred to no foggy black. The results are shown in Tables 2-6.

TABLE-US-00002 TABLE 2 Conductive paste formula and EL test results of cells when a passivation layer thickness is 52 nm P0-1 P1 P2 P3 P4 Mix1 (wt %) 2.4 / / / / A-GOC1 (wt %) / 0.23 0.48 0.80 1.00 L-GOC1 (wt %) / 0.34 0.34 0.39 0.39 T-GOC1 (wt %) / 1.69 1.51 1.20 1.00 D-GOC1 (wt %) / 0.14 0.07 0.01 0.01 EL General General Slight foggy No foggy Slight foggy black-acceptable black black-acceptable

TABLE-US-00003 TABLE 3 Conductive paste formula and EL test results of cells when a passivation layer thickness is 60 nm P0-2 P5 P6 P7 P8 Mix1 (wt %) 2.5 / / / / A-GOC1 (wt %) / 0.24 0.5 0.83 1.04 L-GOC1 (wt %) / 0.36 0.35 0.4 0.4 T-GOC1 (wt %) / 1.76 1.58 1.25 1.04 D-GOC1 (wt %) / 0.14 0.07 0.02 0.02 EL General General Slight foggy No foggy Slight foggy black-acceptable black black-acceptable

TABLE-US-00004 TABLE 4 Conductive paste formula and EL test results of cells when a passivation layer thickness is 68 nm P0-3 P9 P10 P11 P12 Mix1 (wt %) 2.6 / / / / A-GOC1 (wt %) / 0.25 0.52 0.86 1.08 L-GOC1 (wt %) / 0.37 0.37 0.41 0.41 T-GOC1 (wt %) / 1.83 1.64 1.30 1.08 D-GOC1 (wt %) / 0.15 0.07 0.03 0.03 EL General Slight foggy Slight foggy No foggy Slight foggy black-acceptable black-acceptable black black-acceptable

TABLE-US-00005 TABLE 5 Conductive paste formula and EL test results of cells when a passivation layer thickness is 72 nm P0-4 P13 P14 P15 P16 Mix1 (wt %) 3 / / / / A-GOC1 (wt %) / 0.29 0.60 1.00 1.25 L-GOC1 (wt %) / 0.43 0.42 0.45 0.45 T-GOC1 (wt %) / 2.11 1.90 1.50 1.25 D-GOC1 (wt %) / 0.17 0.08 0.05 0.05 EL General General Slight foggy No foggy Slight foggy black-acceptable black black-acceptable

TABLE-US-00006 TABLE 6 Conductive paste formula and EL test results of cells when a passivation layer thickness is 80 nm P0-5 P17 P18 P19 P20 Mixl (wt %) 4.2 / / / / A-GOC1 (wt %) / 0.40 0.84 1.39 1.75 L-GOC1 (wt %) / 0.60 0.59 0.63 0.63 T-GOC1 (wt %) / 2.96 2.65 2.10 1.74 D-GOC1 (wt %) / 0.24 0.12 0.08 0.08 EL General General Slight foggy No foggy Slight foggy black-acceptable black black-acceptable

[0075] In the testing process of the solar cell, the present disclosure conducted statistical confidence analysis (p value analysis) on electrical performance testing, and the obtained test samples and reference samples were significantly different (p<0.05), thus excluding the difference caused by test errors.

Example 2

[0076] Preparation of a Glass-Oxide-Complex (GOC) System:

[0077] Different A-GOC2, L-GOC2, T-GOC2, and D-GOC2 were prepared from the components described in Table 7 below, and a single component Mix2 without separation was also prepared as a control. Samples were prepared in batches of 200 g by mixing the individual oxide components in the amounts specified in Table 1. The oxide mixture was put into a 0.5 L platinum crucible, and then the crucible was put into a glass melting furnace at 1,300° C. for 30 minutes to obtain a glass and oxide frit. The frit was taken out and poured into a twin-roll cooler for quenching to obtain glass slag. After being ground in a 1 L planetary ball mill, the glass slag was sieved with a 325-mesh sieve to obtain A-GOC2 powder, L-GOC2 powder, T-GOC2 powder, D-GOC2 powder, and Mix2 powder, respectively.

TABLE-US-00007 TABLE 7 Formulas of A-GOC2, L-GOC2, T-GOC2, D-GOC2 and Mix2 Mix2 A-GOC2 L-GOC2 T-GOC2 D-GOC2 A-GOC Li.sub.2O 5.73% 20.47% / / / PbO 17.93%  64.06% / / / B.sub.2O.sub.3 3.60% 12.86% / / / ZnO /  0.00% / / / B.sub.2O.sub.3 0.73%  2.61% / / / L-GOC PbO 1.15% /  3.73% / / Bi.sub.2O.sub.3 18.76%  / 60.83% / / Al.sub.2O.sub.3 3.55% / 11.51% / / SiO.sub.2 0.64% /  2.08% / / B.sub.2O.sub.3 6.74% / 21.85% / / T-GOC SiO.sub.2 5.73% / / 14.82%  / TeO.sub.2 28.67%  / / 74.16%  / Bi.sub.2O.sub.3 3.60% / / 9.32% / B.sub.2O.sub.3 0.33% / / 0.85% / Na.sub.2O 0.33% / / 0.85% / D-GOC SiO.sub.2 0.93% / / / 37.05% PbO 0.56% / / / 22.31% MgO 0.07% / / /  2.79% TiO.sub.2 0.04% / / /  1.59% Bi.sub.2O.sub.3 0.91% / / / 36.26%

[0078] Preparation of Conductive Paste:

[0079] A list of components used in the following examples and control examples is as follows:

[0080] (1) conductive powder: spherical silver powder (AG-4-8, Dowa HighTech Co., Ltd.) with an average particle size (D50) of 2 μm;

[0081] (2) a glass and oxide complex GOC: Mix2, or a multi-component mixture of A-GOC2, L-GOC2, T-GOC2, and D-GOC2;

[0082] (3) an organic carrier:

[0083] a binder: ethyl cellulose (Dow Chemical Co., Ltd., STD4); a solvent: terpineol (Nippon Terpine Co., Ltd.); and a thixotropic agent: DISPARLON 6500 (Kusumoto Chemicals, Ltd.).

[0084] 1 wt % of ethyl cellulose and 0.6 wt % of a thixotropic agent were fully dissolved in 6 wt % of terpineol at 50° C.; and 90 wt % of Ag powder and 2.4 wt % of GOC were added into the obtained solution and mixed uniformly, and the obtained mixture was then mixed and dispersed by using a three-roll mixer to obtain metallized silver paste P0-6, and P21-P24.

[0085] Under the premise of keeping the other components unchanged, only the GOC content was increased to 2.5 wt %, uniform mixing was carried out, and the obtained mixture was then mixed and dispersed by using the three-roll mixer to obtain metallized silver paste P0-7, and P25-P28.

[0086] Under the premise of keeping the other components unchanged, only the GOC content was increased to 2.6 wt %, uniform mixing was carried out, and the obtained mixture was then mixed and dispersed by using the three-roll mixer to obtain metallized silver paste P0-8, and P29-P32.

[0087] Under the premise of keeping the other components unchanged, only the GOC content was increased to 3 wt %, uniform mixing was carried out, and the obtained mixture was then mixed and dispersed by using the three-roll mixer to obtain metallized silver paste P0-9, and P33-P36.

[0088] Under the premise of keeping the other components unchanged, only the GOC content was increased to 4.2 wt %, uniform mixing was carried out, and the obtained mixture was then mixed and dispersed by using the three-roll mixer to obtain metallized silver paste P0-10, and P37-P40.

[0089] 80 mg of each type of metallized silver paste and 600 mg of aluminum paste were printed on the front and back sides of silicon wafers with different passivation layer thicknesses in predetermined patterns by means of silk-screen printing, and dried in an infrared drying oven. The silicon wafers were rapidly sintered in a rapid sintering furnace at 900° C. for 30 minutes and cooled to room temperature, thereby preparing a solar cell.

[0090] The structure of the obtained solar cell is shown in FIG. 1. The metallized silver paste was sintered to form a front electrode, and the aluminum paste was sintered to form a back partial contact. The structure of a pure silicon wafer includes: front SiN.sub.x-silicon wafer-Al.sub.2O.sub.3-back SiN.sub.x.

[0091] The performance of the solar cell was tested and characterized by using EL images through an EL tester. The foggy black of the cell was expressed as: serious which referred to that a foggy black area was greater than 20% of a total area of cells; general which referred to that 10% of the total area of the cells was less than or equal to the foggy black area, and the foggy black area was less than or equal to 20% of the total area of the cells; acceptable which referred to slight foggy black, where the foggy black area was less than 10% of the total area of the cells; and excellent which referred to no foggy black. The results are shown in Tables 8-12.

TABLE-US-00008 TABLE 8 Conductive paste formula and EL test results of cells when a passivation layer thickness is 44 nm P0-6 P21 P22 P23 P24 Mix2 (wt %) 2.04 / / / / A-GOC1 (wt %) / 0.20 0.40 0.67 0.85 L-GOC1 (wt %) / 0.29 0.29 0.31 0.31 T-GOC1 (wt %) / 1.43 1.29 1.05 0.87 D-GOC1 (wt %) / 0.12 0.06 0.01 0.01 EL General General Slight foggy No foggy Slight foggy black-acceptable black black-acceptable

TABLE-US-00009 TABLE 9 Conductive paste formula and EL test results of cells when a passivation layer thickness is 48 nm P0-7 P25 P26 P27 P28 Mix2 (wt %) 2.37 / / / / A-GOC1 (wt %) / 0.23 0.47 0.78 0.99 L-GOC1 (wt %) / 0.33 0.33 0.37 0.37 T-GOC1 (wt %) / 1.67 1.50 1.21 0.99 D-GOC1 (wt %) / 0.14 0.07 0.01 0.02 EL General General Slight foggy No foggy Slight foggy black-acceptable black black-acceptable

TABLE-US-00010 TABLE 10 Conductive paste formula and EL test results of cells when a passivation layer thickness is 56 nm P0-8 P29 P30 P31 P32 Mix2 (wt %) 2.63 / / / / A-GOC1 (wt %) / 0.25 0.53 0.85 1.07 L-GOC1 (wt %) / 0.38 0.37 0.42 0.43 T-GOC1 (wt %) / 1.85 1.66 1.35 1.10 D-GOC1 (wt %) / 0.15 0.07 0.01 0.03 EL General Slight foggy Slight foggy No foggy Slight foggy black-acceptable black-acceptable black black-acceptable

TABLE-US-00011 TABLE 11 Conductive paste formula and EL test results of cells when a passivation layer thickness is 64 nm P0-9 P33 P34 P35 P36 Mix2 (wt %) 2.78 / / / / A-GOC1 (wt %) / 0.27 0.55 0.89 1.15 L-GOC1 (wt %) / 0.40 0.39 0.43 0.42 T-GOC1 (wt %) / 1.95 1.76 1.44 1.16 D-GOC1 (wt %) / 0.16 0.08 0.02 0.05 EL General General Slight foggy No foggy Slight foggy black-acceptable black black-acceptable

TABLE-US-00012 TABLE 12 Conductive paste formula and EL test results of cells when a passivation layer thickness is 76 nm P0-10 P37 P38 P39 P40 Mix2 (wt %) 3.86 / / / / A-GOC1 (wt %) / 0.37 0.77 1.23 1.61 L-GOC1 (wt %) / 0.55 0.54 0.56 0.58 T-GOC1 (wt %) / 2.72 2.44 2.02 1.61 D-GOC1 (wt %) / 0.22 0.11 0.06 0.07 EL General General Slight foggy No foggy Slight foggy black-acceptable black black-acceptable

[0092] From the view of the results of printing and performance testing of silicon wafers with different passivation layer thicknesses, with the increase of the passivation layer thickness, the percentage of glass powder in a formula system gradually increases. Compared with MIX1 and MIX2, the separated A-GOC, L-GOC, T-GOC and D-GOC can achieve obviously superior results by continuously adjusting the proportion of all the components. According to the effects of the A-GOC1, the L-GOC1, the T-GOC1 and the D-GOC1 on different passivation layers in different proportions, P3, P7, P11, P15 and P19 show the best effect. According to the effects of the A-GOC2, the L-GOC2, the T-GOC2 and the D-GOC2 on different passivation layers in different proportions, P23, P27, P31, P35 and P39 show the best effect.

Comparative Example 1

[0093] Different Na-GOC, Pb-GOC, Si—Te-GOC, and Si-GOC were prepared from the components described in Table 13 below, and a single component Mix3 without separation was also prepared as a control. Samples were prepared in batches of 200 g by mixing the individual oxide components in the amounts specified in Table 13. The oxide mixture was put into a 0.5 L platinum crucible, and then the crucible was put into a glass melting furnace at 1,300° C. for 30 minutes to obtain a glass and oxide frit. The frit was taken out and poured into a twin-roll cooler for quenching to obtain glass slag. After being ground in a 1 L planetary ball mill, the glass slag was sieved with a 325-mesh sieve to obtain GOC powder and Mix3 powder.

[0094] Preparation of conductive paste and cells: formulas and production of paste P0-11 to P0-P15 and P41-P60 were implemented according to the process in Example 1. Corresponding performance test results are shown in Tables 14-15.

TABLE-US-00013 TABLE 13 Formulas of Na-GOC, Pb-GOC, Si-Te-GOC, Si-GOC and Mix3 Mix3 Na-GOC Pb-GOC Si-Te-GOC Si-GOC Na-GOC Na.sub.2O 6.04% 19.36% / / / PbO 18.20%  58.31% / / / Bi.sub.2O.sub.3 4.87% 15.60% / / / ZnO 1.80%  5.77% / / / B.sub.2O.sub.2 0.30%  0.96% / / / Pb-GOC PbO 0.57% /  2.19% / / Bi.sub.2O.sub.3 16.39%  / 63.02% / / Al.sub.2O.sub.3 2.83% / 10.88% / / SiO.sub.2 0.57% /  2.19% / / B.sub.2O.sub.3 5.65% / 21.72% / / Si-Te-GOC SiO.sub.2 6.07% / / 14.95% / TeO.sub.2 27.27%  / / 67.14% / Bi.sub.2O.sub.3 6.07% / / 14.95% / B.sub.2O.sub.2 0.60% / /  1.48% / Na.sub.2O 0.60% / /  1.48% / Si-GOC SiO.sub.2 1.00% / / / 46.08% PbO 0.50% / / / 23.04% MgO 0.05% / / /  2.30% TiO.sub.2 0.02% / / /  0.92% Bi.sub.2O.sub.3 0.60% / / / 27.65%

TABLE-US-00014 TABLE 14 Conductive paste formula and EL test results of cells when a passivation layer thickness is 60 nm P0-12 P45 P46 P47 P48 Mix3 (wt %) 2.5 / / / / Na-GOC (wt %) / 0.24 0.5 0.83 1.04 Pb-GOC (wt %) / 0.36 0.35 0.4 0.4 Si-Te-GOC (wt %) / 1.76 1.58 1.25 1.04 Si-GOC (wt %) / 0.14 0.07 0.02 0.02 EL General General Slight foggy serious Slight foggy black-acceptable black-acceptable

TABLE-US-00015 TABLE 15 Conductive paste formula and EL test results of cells when a passivation layer thickness is 80 nm P0-15 P57 P58 P59 P60 Mix3 (wt %) 4.2 / / / / Na-GOC (wt %) / 0.40 0.84 1.39 1.75 Pb-GOC (wt %) / 0.60 0.59 0.63 0.63 Si-Te-GOC (wt %) / 2.96 2.65 2.10 1.75 Si-GOC (wt %) / 0.24 0.12 0.08 0.08 EL General General General serious Slight foggy black-acceptable

[0095] It can be seen from the results of Comparative Example 1 that the paste prepared by using the separated Na-GOC, Pb-GOC, Si—Te-GOC and Si-GOC is not very ideal in EL test results, and more in foggy black phenomena.

Comparative Example 2

[0096] Different Li-GOC, Pb-GOC, Bi—Te-GOC, and Si-GOC were prepared from the components described in Table 16 below, and a single component Mix4 without separation was also prepared as a control. Samples were prepared in batches of 200 g by mixing the individual oxide components in the amounts specified in Table 19. The oxide mixture was put into a 0.5 L platinum crucible, and then the crucible was put into a glass melting furnace at 1300° C. for 30 minutes to obtain a glass and oxide frit. The frit was taken out and poured into a twin-roll cooler for quenching to obtain glass slag. After being ground in a 1 L planetary ball mill, the glass slag was sieved with a 325-mesh sieve to obtain GOC powder and Mix4 powder.

[0097] Preparation of conductive paste and cells: formulas and production of paste P0-16 to P0-P20 and P61-P80 were implemented according to the process in Example 2. Corresponding performance test results are shown in Tables 17-21.

TABLE-US-00016 TABLE 16 Formulas of Li-GOC, Pb-GOC, Bi-Te-GOC, Si-GOC and Mix4 Mix4 Li-GOC Pb-GOC Bi-Te-GOC Si-GOC Li-GOC Li.sub.2O 5.73% 20.47% / / / PbO 17.93%  64.06% / / / Bi.sub.2O.sub.3 3.60% 12.86% / / / ZnO /  0.00% / / / B.sub.2O.sub.3 0.73%  2.61% / / / Pb-GOC PbO 1.15% /  3.73% / / Bi.sub.2O.sub.3 18.76%  / 60.83% / / Al.sub.2O.sub.3 3.55% / 11.51% / / SiO.sub.2 0.64% /  2.08% / / B.sub.2O.sub.3 6.74% / 21.85% / / Bi-Te-GOC SiO.sub.2 5.73% / / 14.82%  / TeO.sub.2 28.67%  / / 74.16%  / Bi.sub.2O.sub.3 3.60% / / 9.32% / B.sub.2O.sub.3 0.33% / / 0.85% / MgO 0.33% / / 0.85% / Si-GOC SiO.sub.2 0.93% / / / 37.05% PbO 0.56% / / / 22.31% MgO 0.07% / / /  2.79% TiO.sub.2 0.04% / / /  1.59% Bi.sub.2O.sub.3 0.91% / / / 36.26%

TABLE-US-00017 TABLE 17 Conductive paste formula and EL test results of cells when a passivation layer thickness is 44 nm P0-16 P61 P62 P63 P64 Mix4 (wt %) 2.04 / / / / Li-GOC (wt %) / 0.19 0.41 0.67 0.85 Pb-GOC (wt %) / 0.29 0.29 0.31 0.31 Bi-Te-GOC (wt %) / 1.43 1.29 1.05 0.87 Si-GOC (wt %) / 0.12 0.06 0.01 0.01 EL General General Serious Slight foggy General black-acceptable

TABLE-US-00018 TABLE 18 Conductive paste formula and EL test results of cells when a passivation layer thickness is 48 nm P0-17 P65 P66 P67 P68 Mix4 (wt %) 2.37 / / / / Li-GOC (wt %) / 0.23 0.47 0.78 0.99 Pb-GOC (wt %) / 0.34 0.33 0.37 0.37 Bi-Te-GOC (wt %) / 1.66 1.50 1.21 0.99 Si-GOC (wt %) / 0.14 0.07 0.01 0.02 EL Slight foggy Serious General General Slight foggy black-acceptable black-acceptable

TABLE-US-00019 TABLE 19 Conductive paste formula and EL test results of cells when a passivation layer thickness is 56 nm P0-18 P69 P70 P71 P72 Mix4 (wt %) 2.63 / / / / Li-GOC (wt %) / 0.25 0.53 0.85 1.08 Pb-GOC (wt %) / 0.38 0.37 0.42 0.43 Bi-Te-GOC (wt %) / 1.85 1.66 1.35 1.09 Si-GOC (wt %) / 0.15 0.07 0.01 0.03 EL General General Slight foggy Serious Slight foggy black-acceptable black-acceptable

TABLE-US-00020 TABLE 20 Conductive paste formula and EL test results of cells when a passivation layer thickness is 64 nm P0-19 P73 P74 P75 P76 Mix4 (wt %) 2.78 / / / / Li-GOC (wt %) / 0.27 0.56 0.89 1.16 Pb-GOC (wt %) / 0.40 0.39 0.43 0.42 Bi-Te-GOC (wt %) / 1.95 1.76 1.44 1.16 Si-GOC (wt %) / 0.16 0.08 0.02 0.05 EL Slight foggy General Serious General Slight foggy black-acceptable black-acceptable

TABLE-US-00021 TABLE 21 Conductive paste formula and EL test results of cells when a passivation layer thickness is 76 nm P0-20 P77 P78 P79 P80 Mix4 (wt %) 3.86 / / / / Li-GOC (wt %) / 0.37 0.77 1.23 1.61 Pb-GOC (wt %) / 0.55 0.54 0.56 0.58 Bi-Te-GOC (wt %) / 2.72 2.44 2.02 1.61 Si-GOC (wt %) / 0.22 0.11 0.06 0.07 EL General Serious General Slight foggy General black- acceptable

[0098] It can be seen from the results of Comparative Example 2 that the paste prepared by using the separated Bi—Te-GOC, Li-GOC, Pb-GOC and Si-GOC is not very ideal in EL test results, and more in foggy black phenomena, thus having a failure in achieving the purpose of improving battery performance.

[0099] Although the present disclosure has been disclosed as above with exemplary embodiments, it is not intended to limit the present disclosure. Those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present disclosure. Therefore, the protection scope of the present disclosure shall be defined in the claims.