Fast frequency divider circuit using combinational logic
09667231 ยท 2017-05-30
Assignee
Inventors
Cpc classification
International classification
H03B19/00
ELECTRICITY
Abstract
The various technologies presented herein relate to performing on-chip frequency division of an operating frequency of a ring oscillator (RO). Per the various embodiments herein, a conflict between RO size versus operational frequency can be addressed by dividing the output frequency of the RO to a frequency that can be measured on-chip. A frequency divider circuit (comprising NOR gates and latches, for example) can be utilized in conjunction with the RO on the chip. In an embodiment, the frequency divider circuit can include a pair of latches coupled to the RO to facilitate dividing the oscillating frequency of the RO by 2. In another embodiment, the frequency divider circuit can include four latches (operating in pairs) coupled to the RO to facilitate dividing the oscillating frequency of the RO by 4. A plurality of ROs can be MUXed to the plurality of ROs by a single oscillation-counting circuit.
Claims
1. An electrical circuit, comprising: a ring oscillator (RO) comprising a plurality of stages, the RO configured to: oscillate at a frequency when the RO is energized with a first electrical signal; and output a first plurality of output signals from respective stages in the plurality of RO stages; and a plurality of NOR gates, the plurality of NOR gates configured to respectively receive the first plurality of output signals and output a second plurality of output signals; and a plurality of latches, the plurality of latches configured to respectively receive the second plurality of output signals and generate an output, wherein the output is division of an oscillating frequency of the RO by an integer.
2. The electrical circuit of claim 1, wherein the electrical circuit is located in an application-specific integrated circuit (ASIC).
3. The electrical circuit of claim 1, wherein the electrical circuit forms part of a physical unclonable function (PUF).
4. The electrical circuit of claim 1, wherein the integer is a factor of 2.
5. The electrical circuit of claim 4, wherein the plurality of latches comprise a first latch and a second latch, and an oscillating frequency of a signal output by the second is half the oscillating frequency of the RO.
6. The electrical circuit of claim 4, wherein the plurality of latches comprise a first latch, a second latch, a third latch, and a fourth latch, and an oscillating frequency of a signal output by the second latch is half the oscillating frequency of the RO, and an oscillating frequency of a signal output by the fourth latch is one quarter of the oscillating frequency of the RO.
7. The electrical circuit of claim 6, wherein the plurality of stages forming the RO comprise a NAND gate and a plurality of inverters, wherein the first electrical signal is applied to the NAND gate, and a NAND output signal from the NAND gate is input into a first inverter in the plurality of inverters and input into a first input of a first NOR gate in the plurality of NOR gates, a first inverter output signal from the first inverter is input into a second inverter and input into a first input of a second NOR gate in the plurality of NOR gates, and a third inverter output signal from the second inverter is input into a second input of the first NOR gate and is input into a second input of the second NOR gate in the plurality of NOR gates.
8. The electrical circuit of claim 7, the first latch comprises an input EN.sub..1., an input D.sub..1., an output Q.sub..1., and an output Qn.sub..1., the second latch comprises an input EN.sub..2., an input D.sub..2., an output Q.sub..2., and an output Qn.sub..2., wherein the output of the first NOR gate is connected to the EN.sub..1. input of the first latch, the output of the second NOR gate is connected to the EN.sub..2. input of the second latch, the Qn.sub..2. output of the second latch is connected to the D.sub..1. input of the first latch, the Q.sub..1. output of the first latch is connected to the D.sub..2. input of the second latch, and the oscillating frequency is measured at the output Q.sub..2. of the second latch.
9. The electrical circuit of claim 7, wherein the plurality of RO stages further comprises a third inverter and a fourth inverter, wherein the third inverter and the fourth inverter are located in series between the NAND gate and the first inverter in the plurality of RO stages.
10. The electrical circuit of claim 1, wherein the RO, the plurality of NOR gates and the plurality of latches form a first RO circuit located in an application-specific integrated circuit (ASIC), the ASIC further comprising a second RO circuit, wherein the second RO circuit further comprising: a second RO comprising a second plurality of inverters, the second RO configured to oscillate at a second frequency when the second RO is energized with the first electrical signal and output a third plurality of output signals; a second plurality of NOR gates, the second plurality of NOR gates configured to respectively receive the third plurality of output signals and output a fourth plurality of output signals; and a second plurality of latches, the second plurality of latches configured to respectively receive the fourth plurality of output signals and generate a second output, wherein the second output facilitates determination of a second oscillating frequency of the second RO.
11. The electrical circuit of claim 10, further comprising: a multiplexor (MUX), wherein the first RO circuit and the second RO circuit are connected to the MUX to facilitate selection for oscillating frequency determination; and a counter configured to receive an output from the MUX to enable determination of at least one of the oscillating frequency of the RO or the second oscillating frequency of the second RO.
12. An application-specific integrated circuit (ASIC), comprising: a ring oscillator (RO) comprising a plurality of stages, the RO configured to: oscillate at a frequency when the RO is energized with a first electrical signal; and and output a first plurality of output signals from respective stages in the plurality of RO stages; and a plurality of NOR gates, the plurality of NOR gates configured to respectively receive the first plurality of output signals and output a second plurality of output signals; and a plurality of latches, the plurality of latches configured to respectively receive the second plurality of output signals and generate an output, wherein the output facilitates determination of an oscillating frequency of the RO.
13. The ASIC of claim 12, wherein the output has an oscillating frequency that is a fraction of the oscillating frequency of the RO.
14. The ASIC of claim 13, wherein the plurality of latches comprises a first latch and a second latch, and an oscillating frequency of a signal output by the second latch is half the oscillating frequency of the RO.
15. The ASIC of claim 13, wherein the plurality of latches comprises a first latch, a second latch, a third latch, and a fourth latch, and an oscillating frequency of a signal output by the second latch is half the oscillating frequency of the RO, and an oscillating frequency of a signal output by the fourth latch is one quarter of the oscillating frequency of the RO.
16. The ASIC of claim 15, wherein the plurality of RO stages comprise a NAND gate, a first inverter, and a second inverter, wherein the first electrical signal is applied to the NAND gate, and a NAND output signal from the NAND gate is input into the first inverter and input into a first input of a first NOR gate in the plurality of NOR gates, a first inverter signal from the first inverter is input into the second inverter and input into a first input of a second NOR gate in the plurality of NOR gates, a third inverter signal from the second inverter is input into a second input of the first NOR gate and is input into a second input of the second NOR gate.
17. The ASIC of claim 16, wherein the RO further comprises a third inverter and a fourth inverter, wherein the third inverter and the fourth inverter are located in series between the NAND gate and the first inverter.
18. The ASIC of claim 16, the first latch comprises an input EN.sub..1., an input D.sub..1., an output Q.sub..1., and an output Qn.sub..1., the second latch comprises an input EN.sub..2., an input D.sub..2., an output Q.sub..2., and an output Qn.sub..2., wherein the output of the first NOR gate is connected to the EN.sub..1. input of the first latch, the output of the second NOR gate is connected to the EN.sub..2. input of the second latch, the Qn.sub..2. output of the second latch is connected to the D.sub..1. input of the first latch, the Q.sub..1. output of the first latch is connected to the D.sub..2. input of the second latch, and the oscillating frequency is measured at the output Q of the second latch.
19. An application-specific integrated circuit (ASIC) comprising: a ring oscillating (RO) means configured to: oscillate at a particular frequency when energized with an excitation signal; and output a first plurality of signals from respective stages of the RO means during operation with the excitation signal; and a frequency dividing means configured to generate a frequency divided signal based upon the first plurality of signals output from the respective stages of the RO means when the RO means is energized by the excitation signal, wherein the frequency divided signal is indicative of the particular frequency at which the RO oscillates, and further wherein the frequency dividing means comprises: a plurality of NOR gates, the plurality of NOR gates configured to respectively receive the first plurality of output signals and output a second plurality of output signals; and a plurality of latches, the plurality of latches configured to respectively receive the second plurality of output signals and generate the frequency divided signal.
20. The ASIC of claim 19, wherein the frequency divided signal is a fraction of an oscillating frequency of the RO means when the RO means is energized by the excitation signal.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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DETAILED DESCRIPTION
(7) Various technologies are presented herein pertaining to performing on-chip frequency determinations for a chip-based RO, wherein like reference numerals are used to refer to like elements throughout. In the following description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of one or more aspects. It may be evident, however, that such aspect(s) may be practiced without these specific details. In other instances, well-known structures and devices are shown in block diagram form in order to facilitate describing one or more aspects.
(8) As used herein, the terms component, device, and system are intended to encompass computer-readable data storage that is configured with computer-executable instructions that cause certain functionality to be performed when executed by a processor. The computer-executable instructions may include a routine, a function, or the like. It is also to be understood that a component or system may be localized on a single device or distributed across several devices. The terms component, device, and system are also intended to encompass hardware configured to cause certain functionality to be performed, where such hardware can include, but is not limited to including, Field-programmable Gate Arrays (FPGAs), Application-specific Integrated Circuits (ASICs), Application-specific Standard Products (ASSPs), System-on-a-chip systems (SOCs), Complex Programmable Logic Devices (CPLDs), etc.
(9) Further, the term or is intended to mean an inclusive or rather than an exclusive or. That is, unless specified otherwise, or clear from the context, the phrase X employs A or B is intended to mean any of the natural inclusive permutations. That is, the phrase X employs A or B is satisfied by any of the following instances: X employs A; X employs B; or X employs both A and B. In addition, the articles a and an as used in this application and the appended claims should generally be construed to mean one or more unless specified otherwise or clear from the context to be directed to a singular form. Additionally, as used herein, the term exemplary is intended to mean serving as an illustration or example of something, and is not intended to indicate a preference.
(10) As previously mentioned, attempting to obtain on-chip frequency measurements from a ring oscillator (RO) can be problematic when a number of stages of the RO is relatively small. For example, the RO can be located on a 33 millimeter (mm) IC, using 350 nanometer (nm) technology. For an understanding of the effect of number of stages in a RO versus the number of ROs that can be incorporated into a device (e.g., 33 mm IC), the following is provided. 5-stage ROs could occupy approximately 0.28 m.sup.2 and a 3-stage would occupy of that area, 0.168 m.sup.2, meaning that for a 3-stage configuration: 53 million ROs would fit in 9 mm.sup.2, or 535,000 ROs if only 1% area were permitted. For a 5-stage configuration: 32 million ROs would fit in 9 mm.sup.2 or 321,000 ROs if only 1% area were permitted. For a 30-stage configuration: 5.2 million ROs would fit in 9 mm.sup.2 or 52,000 ROs if only 1% area were permitted (1.74 m.sup.2 area per RO).
(11) Conventionally, to measure frequency of a RO, the RO must include a large number of stages, e.g., typically ROs comprising 30 stages (e.g., 29 or 31) are utilized. However, as previously mentioned, as more stages are utilized, their individual variability becomes lost as the operation tends to an average frequency of operation. It may therefore be desirable to utilize fewer stages; however, the output frequency can become difficult to measure. Per the various embodiments presented herein, the conflict between RO size versus operational frequency can be addressed by tightly integrating a frequency divider with the RO, such that the signal output by the frequency divider is readily measurable. More specifically, a frequency divider circuit (comprising NAND gates and latches) can be utilized in conjunction with the RO on the chip. In an embodiment, the frequency divider circuit can include a pair of latches to facilitate dividing the oscillating frequency of the RO by 2. In another embodiment, the frequency divider circuit can include four latches (operating in pairs) coupled to the RO to facilitate dividing the oscillating frequency of the RO by 4.
(12) The various embodiments presented herein enable manufacture of an IC (e.g., an application-specific integrated circuit (ASIC)) comprising a RO and a frequency divider circuit to facilitate on-chip measurement of the operational oscillating frequency of the RO, and further, outputs a signal from which the operational oscillating frequency of the RO can be determined. The various embodiments presented herein can also be utilized for a RO-based physical unclonable function(s) (PUF(s)).
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(14) Electrical circuit 100 comprises an IC 110 having located thereon a RO 120 and a frequency divider 130, wherein, upon excitation with an energizing signal EN, signals output from the RO 120 are input into the frequency divider 130. As shown in
(15) Working left to right from the NAND gate 122 to the second latch 134, the respective inputs, outputs, and connections are now presented. The NAND gate 122 has a pair of inputs I.sub.1 and I.sub.2, and an output O.sub.1. The inverter 124 has an input I.sub.3 and an output O.sub.2. The inverter 126 has an input I.sub.4 and an output O.sub.3. The NOR gate 142 has inputs I.sub.5 and I.sub.6, and output O.sub.4. The NOR gate 144 has inputs I.sub.7 and I.sub.8, and output O.sub.5. The first latch 132 has inputs D.sub.1 and EN.sub.1, and outputs Q.sub.1 and Qn.sub.1. The second latch 134 has inputs D.sub.2 and EN.sub.2, and outputs Q.sub.2 and Qn.sub.2.
(16) As shown on
(17) As further shown in
(18) During operation of the electrical circuit 100, the NAND gate 122 is utilized to enable or disable the RO 120. Rather than only allowing the output node 126 to be utilized by the frequency divider, each stage of the RO 120 can be tapped, per the signals on lines 128 and 129.
(19) The progression of the state of the RO 120, except for gate delays, can be represented in the following, Table 1. The first three row headers on the left-hand side represent the nodes (NAND 122, inverter 124, inverter 126) of the circuit 100, which are the outputs of the three stages of the RO 120 (O1, O2, O3). The column headers represent the states of the circuit over time starting at an arbitrary point 0. The circuit oscillates in six states on this scale. Essentially, the sequence {0,1,0} rotates around the RO 120. At time point 0, the state is {1,1,0}. In this state, the input I3 to inverter 124 is a 1 but its output O2 is a 1 so the inverter transitions its output to a 0. At time point 1, the output O2 of inverter 124 is now a 0, but the output O3 of inverter 126 is a 0 and so inverter 126 transitions. At time step 2, the output O3 of inverter 126 is a 1 and the output of NAND 122 is a 1 and so NAND 122 switches its output O1 to a 0 (1 nand 1 is 0). These switching events continue around the RO 120 until time point 6 which is the same as time point 0 and then the pattern repeats.
(20) TABLE-US-00001 TABLE 1 RO State Progression 0 1 2 3 4 5 6 7 8 9 10 11 NAND 122 1 1 1 0 0 0 1 1 1 0 0 0 INV 124 1 0 0 0 1 1 1 0 0 0 1 1 INV 126 0 0 1 1 1 0 0 0 1 1 1 0 NOR 142 0 0 0 0 0 1 0 0 0 0 0 1 NOR 144 0 1 0 0 0 0 0 1 0 0 0 0 LATCH 132 0 0 0 0 0 1 1 1 1 1 1 0 LATCH 134 1 0 0 0 0 0 0 1 1 1 1 1
(21) To count the number of periods of the RO, two non-overlapping intervals in a single period are utilized to enable operation of the two latches 132 and 134 in a mutually-exclusively fashion. This emulates the theory of operation of the master/slave flip-flop. To simplify the logic circuitry, the states 1 and 5 of the period (which are identical to states 7 and 11) have been chosen, per Table 1. The choice of these two presented states are example states. Another example of a valid choice would be states 2 and 4, in which case, AND gates could be utilized in place of the NOR gates 142 and 144 presented herein. Two new signals, O4 and O5 are generated using NOR gates 142 and 144. They can be expressed by O4=(NAND0 v INV2) and O5=(INV1 v INV2). Finally, these two signals O4 and O5 are connected to the two latches 132 and 134, with the input D.sub.1 of the first latch 132 connected to the active-low output of the second latch Qn.sub.2, and the input D.sub.2 to the second latch 134 connected to the active-high output Q.sub.1 of the first latch 132. The active-high output Q.sub.2 of the second latch 134 is the oscillating signal frequency-divided by 2, as shown in the last two rows of Table 1.
(22) During experimentation, the nominal oscillating frequency of the three-stage RO 120 for a 0.35 m process was 1.7 GHz, while the divided frequency was 850 MHz, which can be latched by a typical frequency divider implemented with a master/slave flip-flop. Experimental results are presented in
(23) As previously mentioned, the RO 120 can comprise a plurality of stages, wherein RO 120 presented in
(24) Further, while
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(27) At 610, a RO is stimulated. The RO can comprise an odd-numbered amount of stages, wherein the stages comprise a NAND gate and a plurality of inverters connected in series. The plurality of inverters includes a penultimate inverter and a final inverter. A signal being output from the NAND gate, which is the input to the penultimate inverter in the case of a 3-stage RO, is input into a first channel of a first NOR gate in a pair of NOR gates. A signal output from the penultimate inverter is input to a first channel of a second NOR gate in the pair of NOR gates. A signal output from the final inverter is connected to second channels of both NOR gates in the pair of NOR gates. Hence, the second channels of both NOR gates receive the same input signal while the respective first channels receive signals that are also received by the penultimate inverter and the final inverter. Hence, based upon the sequence of initial NAND gate, inverters, subsequent pair of NOR gates, a pair of signals are generated based upon the single input utilized to operate the RO. The respective binary state of the signal being input into the pair of NOR gates is shown in Table 1.
(28) At 620, respective outputs from the pair of NOR gates are fed into respective EN inputs of a pair of latches. The input D1 of the first latch being connected to the active-low output of the second latch Qn2, and the input D2 to the second latch connected to the active-high output Q1 of the first latch. The active-high output Q2 of the second latch is the oscillating signal frequency-divided by 2, OUTDIV2.
(29) What has been described above includes examples of one or more embodiments. It is, of course, not possible to describe every conceivable modification and alteration of the above structures or methodologies for purposes of describing the aforementioned aspects, but one of ordinary skill in the art can recognize that many further modifications and permutations of various aspects are possible. Accordingly, the described aspects are intended to embrace all such alterations, modifications, and variations that fall within the spirit and scope of the appended claims. Furthermore, to the extent that the term includes is used in either the details description or the claims, such term is intended to be inclusive in a manner similar to the term comprising as comprising is interpreted when employed as a transitional word in a claim.