Method of manufacturing a metal mask
09656291 ยท 2017-05-23
Assignee
Inventors
- Choong Ho Lee (Gunpo-si, KR)
- Tong-Jin Park (Suwon-si, KR)
- Doh-Hyoung Lee (Guri-si, KR)
- SUNG SIK YUN (Suwon-si, KR)
- Da Hee Jeong (Seoul, KR)
- Jun Ho Jo (Seoul, KR)
Cpc classification
B23K26/082
PERFORMING OPERATIONS; TRANSPORTING
International classification
B05C21/00
PERFORMING OPERATIONS; TRANSPORTING
C23C14/04
CHEMISTRY; METALLURGY
Abstract
Disclosed is a method of manufacturing a metal mask. A method of manufacturing a metal mask in accordance with an exemplary embodiment of the present invention includes forming through holes in a plate using a laser, by scanning the laser onto sequentially smaller overlapping portions of the plate.
Claims
1. A method of manufacturing a metal mask, comprising: planarizing a thin plate; and forming through holes in the thin plate, each through hole being formed by scanning a laser multiple times onto a corresponding pattern region of the thin plate, wherein forming the through holes comprises, for each through hole: forming a sloped portion by scanning the laser on successively smaller overlapping portions of the corresponding pattern region; forming an opening below the sloped portion by using the laser to cut through a remaining portion of the plate; and the remaining portion of the plate is less than about 2 m.
2. The method of claim 1, wherein the scanning comprises moving the laser along a path having a zigzag shape.
3. The method of claim 1, wherein the plate comprises an alloy of 36% nickel and a remainder of iron.
4. The method of claim 1, wherein the sloped portion comprises sidewalls that have a substantially constant slope.
5. The method of claim 1, wherein the forming of the opening comprises scanning the laser along only an edge of the opening.
6. The method of claim 1, further comprising mounting the planarized plate on a stage equipped with a laser generating apparatus.
7. The method of claim 1, wherein the laser is an ultra-short pulsed laser.
8. A method of manufacturing a metal mask, comprising: planarizinq a thin plate; and forming through holes in the thin plate, each through hole being formed by scanning a laser multiple times onto a corresponding pattern region of the thin plate, wherein forming the through holes comprises, for each through hole: forming a sloped portion by scanning the laser on successively smaller overlapping portions of the corresponding pattern region; and forming an opening below the sloped portion by using the laser to cut through a remaining portion of the plate, and wherein a thickness of the pattern region of the thin plate prior to scanning the laser is 75 m to 100 m.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1) The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate exemplary embodiments of the invention, and together with the description serve to explain the principles of the invention.
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DETAILED DESCRIPTION OF THE EMBODIMENTS
(11) The invention is described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. This invention may, however, be embodied in many different forms and should not be construed as limited to the exemplary embodiments set forth herein. Rather, these exemplary embodiments are provided so that this disclosure is thorough, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. Like reference numerals in the drawings denote like elements.
(12) It will be understood that when an element or layer is referred to as being on or connected to another element or layer, it can be directly on or directly connected to the other element or layer, or intervening elements or layers may be present. In contrast, when an element is referred to as being directly on or directly connected to another element or layer, there are no intervening elements or layers present. It will be understood that for the purposes of this disclosure, at least one of X, Y, and Z can be construed asXonly, Y only, Z only, or any combination of two or more items X, Y, and Z (e.g., XYZ, XYY, YZ, ZZ).
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(14) A laser irradiation apparatus 10 may be installed in the stage 20. The laser irradiation apparatus 10 may include a generation unit 11 configured to generate the laser L, and a transfer unit 12 configured to transfer the laser L with respect to the metal mask 100.
(15) The laser L may be an ultra-short pulsed laser emitting at a very short wavelength. For example, the laser L may be a pico-second laser or a femto-second laser. Accordingly, very accurate pattern processing can be performed using the laser L, which is described later in detail below.
(16) Although not shown in
(17) As shown in
(18)
(19) The metal mask 100 may be used in a process of depositing light-emitting materials on a substrate of a display device. In accordance with an exemplary embodiment of the present invention, the metal mask 100 may be used to deposit organic light-emitting materials on a substrate of an OLED display. More particularly, the organic light-emitting materials may be deposited on the substrate in a pattern corresponding to openings that are formed in the metal mask 100.
(20) Referring to
(21) Through holes can be accurately formed even in a thin plate having a thickness of about 10 m, because the thin plate 110 is processed using an ultra-short pulsed laser, as described above. Since a processing depth formed when using an ultra-short pulsed laser is used is about 1 m to 4 m, the thickness of the thin plate 110 is generally 100 m or less, for processing efficiency. Herein, the processing depth refers to an amount of material removed by one or more pulses of the laser. The deposition parts 120 may be configured to deposit organic light-emitting materials on a substrate of an OLED display.
(22) Referring to
(23) The through holes 150 may be arranged in a matrix at a constant interval. An interval G between the through holes 150 (refer to
(24) As the interval G between the through holes 150 is reduced, organic light-emitting materials can be deposited more accurately, and the resolution of the organic light-emitting materials can be increased. If the interval G between the through holes 150 is too small, however, the structure of the metal mask 100 may become weak, which may make it difficult to handle a completed metal mask 100. For this reason, the interval G between the through holes 150 is generally 50 m or less.
(25) As shown in the cross-section of
(26) More particularly, referring to
(27) Referring to
(28) The bottom portion 132 extends from the second opening 152. In accordance with an exemplary embodiment of the present invention, the bottom portion 132 can have substantially vertical sidewalls that extend from the sidewalls of the sloped portion 131. Accordingly, the inside surface 130 of the through hole 150 can include the sloped portion 131 that extends from the first opening 151 to the bottom portion 132, and the bottom portion 132 can extend to the second opening 152. The length H of the bottom portion 132 in the vertical direction can be 2 m, or less.
(29) If the length H of the bottom portion 132 is reduced in the vertical direction as described above, irregularities in a deposition film may be reduced, due to a limited incident angle of organic light-emitting materials in a process of depositing the organic light-emitting materials. The characteristics of the metal mask 100 are described in brief below, with reference to the drawing of a metal mask fabricated using a conventional method, so that the characteristics of the metal mask 100 can be compared with those of the conventional metal mask.
(30)
(31) Referring to
(32) In general, when forming the patterns of a metal mask, a wet etching method for etching parts that need to be removed, by selectively dissolving the parts using soluble chemical materials, is used. The inside surface of the pattern has a concave shape, because the wet etching method is isotropic. Accordingly, the sloped portion 31 has a variable slope rather than a continuous slope, and the bottom portion 32 is also sloped rather than vertical, as shown in
(33) The length h of the bottom portion 32 in the vertical direction is 4 m or more, due to the limitations of the etching method. A difference in the shape between the cross-section of the conventional metal mask and the cross-section of the metal mask 100 can be determined.
(34) The metal mask fabricated using a conventional method, that is, the etching method, is problematic, in that an incident angle limits a process of depositing organic light-emitting materials. Accordingly, the conventional metal mask is problematic in that the precision of pattern processing is low, and it is difficult to uniformly form a deposition film, as compared with using the metal mask 100.
(35) Furthermore, the metal mask fabricated using the conventional etching method has a limit with respect to the fabrication of a display device having a large size and high resolution, due to size limitations of the through holes and a reduction in through hole location precision. In contrast, a metal mask fabricated using a laser can solve the problems of the conventional metal mask, and a method of manufacturing a metal mask in accordance with an exemplary embodiment of the present invention is described in detail below.
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(37) The method of manufacturing a metal mask may include a first operation of evenly disposing the thin plate 110 and a second operation of forming the through holes 150 in the thin plate 110. In the first operation, the through holes 150 are ready to be formed in the thin plate 110. In accordance with an exemplary embodiment of the present invention, the first operation may include a planarization operation of making the thin plate 110 in a flat shape, and a mounting operation of mounting the thin plate 110 on the stage 20 equipped with the laser irradiation apparatus 10. More particularly, since the thin plate 110 made of an Invar material is initially supplied in a roll form, the planarization operation is performed in order to make the thin plate 110 have a flat shape.
(38) A process of cutting the thin plate 110 into appropriate sizes may be included in the planarization operation. The thin plate 110 can be made flat using a jig employing an electromagnetic force.
(39) The mounting operation is performed in order to mount the thin plate 110 on the stage 20. The thin plate 110 may be mounted on the stage 20 in a horizontal state. The stage 20 may include a fixing device for fixing the thin plate 110, so that the thin plate 110 is not moved when processing the patterns 150, for example, a vacuum chuck. The stage 20 may further include an additional driving device configured to move the stage 20.
(40) The stage 20 may be equipped with the laser irradiation apparatus 10 configured to radiate a laser to the thin plate 110 mounted on the stage 20. In this case, the laser irradiation apparatus 10 may be disposed over the stage 20. The second operation of forming the through holes 150 in the thin plate 110 is performed after the thin plate 110 is secured to the stage 20.
(41) In the second operation, the through holes 150 can be formed in the thin plate 110 using a laser. In this case, the through holes 150 can be formed in the pattern region of the thin plate 110, by gradually forming a groove 140, by radiating the laser L onto the pattern region. That is, the second operation can be divided into a groove formation operation and an opening formation operation, and the groove and opening formation operations are consecutive operations.
(42) Referring to
(43) That is, the thickness of the thin plate 110 is reduced by 2 m each time the laser L is scanned across the thin plate 110, until the through hole 150 is completed. In other words, each scan increases the depth of the groove 140, until the thin plate 110 is completely penetrated and the through hole 150 is formed. In addition, the area over which the laser L is scanned may be reduced in subsequent scans, such that the inclined portion 131 can be formed. In other words, the laser may be scanned over sequentially smaller overlapping areas to form the sloped portion 131.
(44) The processed depth can be controlled by controlling power of the laser L. If the number of scans used when processing the pattern 150 is increased, the time taken for the processing is increased, but processing precision can be improved. In contrast, if the number of scans is reduced by increasing the processing depth of the laser L, the time taken for the processing is reduced, but processing precision may be relatively reduced.
(45) In accordance with an exemplary embodiment of the present invention, an area to which the laser L is scanned can be reduced in subsequent scans. Accordingly, the sloped portion 131 can be formed in the inside surface of the groove 140, as shown in
(46) As shown in
(47) As shown in
(48) Referring to
(49) As described above, the through holes 150 can be accurately formed in the thin plate 110 using the laser L. The processing precision of the through holes 150 can be further improved by using an ultra-short pulsed laser as described above.
(50) For example, if a pico-second laser or a femto-second laser is used, processing using a cold ablation process is possible. More particularly, if an ultra-short pulsed laser, such a pico-second laser or a femto-second laser, is used, the surface of a processing article is not molten upon processing, but is directly evaporated in a particle form, because the ultra-short pulsed laser has a very short pulse duration and very high instant peak energy. Thus, processing is completed before heat is transferred to surrounding areas. Accordingly, processing can be performed almost without generating heat in the processing article.
(51) Accordingly, in the method of manufacturing a metal mask in accordance with an exemplary embodiment of the present invention, the through holes 150 can be processed minutely, precisely, and effectively, using the cold ablation process, without damaging the thin plate 110, because the through holes 150 are formed using the ultra-short pulsed laser.
(52) As described above, the method of manufacturing a metal mask in accordance with an exemplary embodiment of the present invention can be used to effectively process accurate patterns, because the ultra-short pulsed laser is used.
(53) Accurate patterns can be formed using a method of forming a flat layer having a specific depth by scanning a laser having a constant processing depth, over an area multiple times.
(54) The metal mask 100 includes the plurality of minute through holes 150 formed in the thin plate 110 having a large size and a thin thickness. Accordingly, the metal mask 100 can be applied to a process of depositing light-emitting materials for a large-sized and high-resolution display device, because of the precision of the through holes 150.
(55) While this invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.