Semiconductor optoelectronic device with an insulative protection layer and the manufacturing method thereof

Abstract

The present disclosure is to provide an optoelectronic device. The optoelectronic device comprises a heat dispersion substrate; an insulative protection layer on the heat dispersion substrate, wherein the insulative protection layer comprises AlInGaN series material; and an optoelectronic unit comprising an epitaxial structure comprising multiple layers on the insulative protection layer, wherein at least one layer of the epitaxial structure comprises III-V group material devoid of nitride.

Claims

1. An optoelectronic device comprising: a heat dispersion substrate; an insulative protection layer on the heat dispersion substrate, wherein the insulative protection layer comprises AlInGaN series material; and an optoelectronic unit comprising an epitaxial structure comprising multiple layers on the insulative protection layer, wherein at least one layer of the epitaxial structure comprises III-V group material devoid of nitride.

2. The optoelectronic device according to claim 1, further comprising a first connecting layer between the heat dispersion substrate and the insulative protection layer.

3. The optoelectronic device according to claim 2, further comprising a reflection layer between the first connecting layer and the insulative protection layer.

4. The optoelectronic device according to claim 3, further comprising an adhesive layer between the reflection layer and the insulative protection layer.

5. The optoelectronic device according to claim 4, wherein the adhesive layer comprises indium tin oxide or zinc oxide.

6. The optoelectronic device according to claim 2, further comprising a second connecting layer between the optoelectronic unit and the insulative protection layer.

7. The optoelectronic device according to claim 1, further comprising a second connecting layer between the optoelectronic unit and the insulative protection layer.

8. The optoelectronic device according to claim 1, wherein the AlInGaN series material of the insulative protection layer is an undpoed III-V group material.

9. The optoelectronic device according to claim 1, wherein the III-V group material of the layer of the epitaxial structure comprises AlGaInP series material.

10. The optoelectronic device according to claim 9, wherein the layer of the epitaxial structure is closest to the insulative protection layer than the other layers of the epitaxial structure.

11. An optoelectronic device comprising: a heat dispersion substrate; an insulative protection layer on the heat dispersion substrate, wherein the insulative protection layer comprises AlInGaN series material; and multiple micro chips on the insulative protection layer, wherein each micro chip has an epitaxial structure comprising multiple layers and a sidewall, and at least one layer of the epitaxial structure comprises III-V group material devoid of nitride.

12. The optoelectronic device according to claim 11, further comprising an opening between two of the micro chips for separating the two micro chips from each other and exposes the side walls of the two micro chips.

13. The optoelectronic device according to claim 12, further comprising an insulating layer in the opening and covers the side walls of the two micro chips.

14. The optoelectronic device according to claim 12, further comprising a conductive structure electrically connected to the two micro chips.

15. The optoelectronic device according to claim 12, wherein each epitaxial structure comprises a first conductivity type semiconductor layer, a second conductivity type semiconductor layer and an active layer between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and the two micro chips each comprises two electrodes on the first conductivity type semiconductor layer and on the second conductivity type semiconductor layer respectively.

16. The optoelectronic device according to claim 15, wherein the conductive structure is in the opening and connects one electrode of one of the two micro chips and one electrode of the other one of the two micro chips.

17. The optoelectronic device according to claim 11, wherein the III-V group material of the layer of the epitaxial structure comprises AlGaInP series material.

18. The optoelectronic device according to claim 17, wherein the layer of the epitaxial structure is closest to the insulative protection layer than the other layers of the epitaxial structure.

19. The optoelectronic device according to claim 11, further comprising a first connecting layer between the heat dispersion substrate and the insulative protection layer.

20. The optoelectronic device according to claim 11, further comprising a second connecting layer between the micro chips and the insulative protection layer.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) The foregoing aspects and many of the attendant advantages of this application will become more readily appreciated as the same becomes better understood by reference to the following detailed description, when taken in conjunction with the accompanying drawings, wherein:

(2) FIGS. 1, 2(a), 3-7 illustrate diagrams of a semiconductor device structure in accordance with the first embodiment of the present application;

(3) FIGS. 2(b)-2(e) illustrate diagrams of a semiconductor device structure in accordance with the second embodiment of the present application;

(4) FIGS. 8-12 illustrate diagrams of a semiconductor device structure in accordance with the third embodiment of the present application;

(5) FIGS. 13(a)-13(d) illustrate diagrams of a semiconductor device structure in accordance with the fourth embodiment of the present application.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

(6) The first embodiment of the present application discloses a semiconductor light emitting device with a protection layer structure which is highly insulative, wherein the protection layer can avoid the current leakage forming between the light-emitting unit and the heat dispersion substrate. The foregoing aspects and many of the attendant advantages of this application will become more readily appreciated as the same becomes better understood by reference to the following detailed description, when taken in conjunction with the FIG. 1-FIG. 7. The application discloses a semiconductor light emitting device 11 with a light emitting unit comprising an epitaxial structure 1. The epitaxial structure 1 comprises a first growth substrate 10, a first conductivity type semiconductor layer 20 formed on the first growth substrate 10, an active layer 30 formed on the first conductivity type semiconductor layer 20, and a second conductivity type semiconductor layer 40 formed on the active layer 30, as shown in FIG. 1. The method of forming an epitaxial structure comprises providing a first growth substrate 10, then growing a first conductivity type semiconductor layer 20 on the first growth substrate 10 by the Metal-Organic Chemical Vapor Deposition method. When the growth of the first conductivity type semiconductor layer 20 is finished, the active layer 30 and the second conductivity type semiconductor layer 40 are grown successively. The first growth substrate 10 mentioned above can be GaAs. The first conductivity type semiconductor layer 20, the active layer 30 and the second conductivity type semiconductor layer 40 mentioned above comprise III-V group compound, such as AlGaInP series material. A regularly or irregularly roughened surface is formed on the surface of the second conductivity type layer 40 by an etch method, and a second connecting layer 50 is formed on the roughened surface.

(7) Referring to FIG. 2(a), another epitaxial structure 2 which has a protection layer 70 grown on a second growth substrate 60 by the Metal-Organic Chemical Vapor Deposition method. The second growth substrate can be sapphire, the protection layer 70 is highly insulative and includes III-V group compound such as AlInGaN series material wherein undoped GaN is a preferred material. A regularly or irregularly roughened surface is formed on the protection layer 70 surface by etch method (not shown in the figures). The epitaxial structure 1 is connected with the epitaxial structure 2 by the second connecting layer 50, and the second growth substrate 60 is removed then so the structure shown in FIG. 3 is formed.

(8) As FIG. 4 shows, an adhesive layer 80, a reflection layer 90 and a third connecting layer 100A are formed in sequence on the protection layer 70. As FIG. 5 shows, a heat dispersion substrate 110 is provided, and a forth connecting layer 100B is formed on the heat dispersion substrate 10. The structure having the third connecting layer 100A shown in FIG. 4 faces the structure having the forth connecting layer 100B shown in FIG. 5 so the third connecting layer 100A and the forth connecting layer 100B form a first connecting layer 100, as FIG. 6 shows. The material of the second connecting layer 50 can be polymer material like BCB, Epoxy, SOG, SU8 etc., or oxide such as TiO.sub.2, Ti.sub.2O.sub.5, Ta.sub.2O.sub.3, Ta.sub.2O.sub.5, ITO, AZO, ZnO, and Al.sub.2O.sub.3, or nitride such as SiON.sub.X, SiN.sub.X, GaN, AlN, or diamond. The function of the adhesive layer 80 is to increase the adhesive force between the protection layer 70 and the reflection layer 90, the material of the adhesive layer can be ITO or ZnO, the material of the reflection layer 90 can be aluminum, silver, or other high reflectivity materials. The material of the first connecting layer 100, the third connecting layer 100A, and the forth connecting layer 100B can be soldering tin, low temperature metal, and metal silicides, such as PbSn, AuGe, AuBe, AuSi, Sn, In, PdIn. The material of the heat dispersion substrate 110 can be Si, Ge, Cu, Mo, AlN, ZnO.

(9) The upper surface of the first conductivity type semiconductor 20 is exposed after removing the first growth substrate 10, then the regularly or irregularly roughened surface is formed by the etch method. By etching from the first conductivity type semiconductor layer 20 to the second conductivity type semiconductor layer 40, a partial portion surface of the second conductivity type semiconductor layer is exposed, then the electrodes 15 and 25 are formed on the upper surface of the first conductivity type semiconductor layer 20 and on the exposed surface of the second conductivity type semiconductor layer 40, then the structure of the light-emitting device 11 as the FIG. 7 is formed.

(10) The second embodiment of the present application discloses a semiconductor light emitting device with a protection layer structure which is highly insulative. The foregoing aspects and many of the attendant advantages of this application will become more readily appreciated as the same becomes better understood by reference to the following detailed description when taken in conjunction with the FIG. 2(b)-FIG. 2(e). Referring to FIG. 2(b), another epitaxial structure 2 which has a protection layer 70 grown on a second growth substrate 60 by the Metal-Organic Chemical Vapor Deposition method is provided. The second growth substrate can be sapphire, and the protection layer 70 is highly insulative and includes III-V group compound such as AlInGaN series material wherein undoped GaN is a preferred material. A regularly or irregularly roughened surface is formed on the protection layer 70 surface by etch method (not shown in the figures). The protection layer has the first surface c and the second surface d, the area of the first surface c is larger than the area of the second surface d. The epitaxial structure 2 is larger than the epitaxial structure 1 in size. The epitaxial structure 1 is connected with the epitaxial structure 2 by the second connecting layer 50, so the structure shown in FIG. 2(c) is formed.

(11) The upper surface of the first conductivity type semiconductor 20 is exposed after removing the first growth substrate 10, then the regularly or irregularly roughened surface is formed by the etch method. By etching from the first conductivity type semiconductor layer 20 to the second conductivity type semiconductor layer 40, a partial portion surface of the second conductivity type semiconductor layer is exposed, then the electrodes 15 and 25 are formed on the upper surface of the first conductivity type semiconductor layer 20 and on the exposed surface of the second conductivity type semiconductor layer 40, then the structure of the light-emitting device 16 as FIG. 2(e) is formed.

(12) The third embodiment of the present application discloses a semiconductor light emitting device with a protection layer structure which is highly insulative, and it can avoid the high voltage to breakdown the semiconductor light emitting device structure. The foregoing aspects and many of the attendant advantages of this application will become more readily appreciated as the same becomes better understood by reference to the following detailed description, when taken in conjunction with the FIGS. 8-12. The semiconductor light emitting device of this embodiment is operated in direct current or alternating current, and the device structure and manufacturing process different from that of the first embodiment as shown in FIGS. 1-6 are described as follows. First, removing the first growth substrate 10 in FIG. 6, as shown in FIG. 8. As FIG. 9 shows, forming the plurality of openings 140 by etching the first conductivity type semiconductor layer 20, active layer 30, the second conductivity type semiconductor layer 40, and the upper surface of the second connecting layer 50 by developing and etch process. Then etching the first conductivity type semiconductor layer 20, active layer 30, and the upper surface of the second conductivity type semiconductor layer 40 by developing and etch process. As FIG. 10 shows, the plurality of electrodes 35, 45 are formed on respectively and connecting electrically with the first conductivity type semiconductor layer 20 and the second conductivity type semiconductor layer 40 to form the plurality of micro chips 13. The electrodes 35, 45 are formed by deposition method for ohmic contact.

(13) An insulating layer 120 is formed inside the plurality of openings 140 to avoid the current leakage. The material of the insulating layer can be dielectric materials such as SiOx or SiNx as shown in FIG. 11. Finally, the plurality of conductive structures 130 are formed and are connected electrically with the plurality of electrodes 35, 45 in a series connection or parallel connection. The illumination unit including the lighting module composed of the plurality of micro chips 13 is shown in FIG. 12. Every active layer of every micro chip emits the same or different wavelength, and the module composed with the plurality of micro chips can be operated in direct current or alternating current.

(14) The fourth embodiment of the present application discloses a semiconductor light emitting device with a protection layer structure which is highly insulative, and it can avoid the reversion current to breakdown the semiconductor light emitting device structure.

(15) The foregoing aspects and many of the attendant advantages of this application will become more readily appreciated as the same becomes better understood by reference to the following detailed description, when taken in conjunction with the FIG. 13(a)-FIG. 13(d).

(16) The light emitting diode 14 that can avoid the reverse current breaking down the structure is exemplified in this embodiment. There are three differences in device structure and manufacturing process compared with the first embodiment shown in FIGS. 1-6. First, the protection layer 70 is composed of conductive materials, and the electricity is different from the second conductivity type semiconductor layer 40, and the material can be GaN doped with the impurity, dope a single layer structure of III-V group materials or zinc oxide doped with the impurity, or a multiple layers structure stacked alternately with zinc oxide and silicon or zinc oxide and indium oxide tin. Second, the material of forming the second connecting layer 50 can be soldering tin, low temperature metal, and metal silicide, such as PbSn, AuGe, AuBe, AuSi, Sn, In, and PdIn. Third, the material of forming the first connecting layer 100 can be polymer material like BCB, Epoxy, SOG, SUB, or oxide such as TiO.sub.2, Ti.sub.2O.sub.5, Ta.sub.2O.sub.3, Ta.sub.2O.sub.5, ITO, AZO, ZnO, and Al.sub.2O.sub.3, or nitride such as SiONx, SiNx GaN, AlN, or diamond. As FIG. 13(a) shows, removing the first growth substrate (not shown in the figures) to expose the top surface of the first conductivity type semiconductor layer 20, then forming a regularly or an irregularly roughened surface by etch method. By etching from up the first conductivity type semiconductor layer 20 to down the active layer 30, a portion surface a of the second conductivity type semiconductor layer 40 is exposed, then by etching from up the first conductivity type semiconductor layer 20 down to the active layer 30, the second conductivity type semiconductor layer 40, the second connecting layer 50, the protecting layer 70, and the top surface b of the adhesive layer 80 is exposed. Forming an electrode A on the exposed surface a of the second conductivity type semiconductor layer 40 electrically connecting with the second conductivity type semiconductor layer 40. Forming a conductive structure 130 on the sidewall of the active layer 30, the second conductivity type semiconductor layer 40, the second connecting layer 50, and the protecting layer 70, then forming an electrode B covering the conductive structure to form the light-emitting diode 14. The conductivity type of the protecting layer 70 is different from the second conductivity type semiconductor layer 40 and can form a diode characteristic stack C to prevent the electric static discharge. The diode stack structure D is formed by the first conductivity type semiconductor layer 20, the active layer 30, and the second conductivity type semiconductor layer 40, and electrically connected to the diode characteristic stack in anti-parallel by the conductive structure 30, as FIG. 13(b) shows. As FIG. 13(c) shows, when the forward current flows from electrode A to electrode B, the current passes through the diode stack structure D formed by the second conductivity type semiconductor layer 40, the active layer 30, and the first conductivity type semiconductor layer 20 in sequence, and the light-emitting diode 14 is normal operation. As FIG. 13(d) shows, when the reverse current flows from electrode B to electrode A, the current passes through the diode stack structure C formed by the adhesive layer 80, the protecting layer 70, the second connecting layer 50, and the second conductivity type semiconductor layer 40 in sequence to prevent the electric static discharge. The current does not flow through the active layer 30 so the device structure having no breakdown by the reverse current is formed. The stack structure C formed by the protecting layer 70, the second connecting layer 50 and the second conductivity type semiconductor layer 40 is provided with a function to prevent the electric static discharge.

(17) The embodiments of the above mentioned, the growth substrate is at least one material selected from the group consist of silicon carbide, gallium nitride, and aluminum nitride. The first conductivity type semiconductor layer, the active layer, ant the second conductivity type semiconductor layer of the above mentioned can be a single layer or multiple layers structure, such as super-lattice. Besides, the epitaxial structure of the application mentioned does not limit to growth in epitaxial method on the growth substrate, other forming methods such as directly connect or connect to a heat dispersion substrate by a medium in connecting method belong to the scope of the application.

(18) It should be noted that the proposed various embodiments are not for the purpose to limit the scope of the invention. Any possible modifications without departing from the spirit of the invention may be made and should be covered by the application.