METHOD FOR PRODUCING A PLURALITY OF CONVERSION ELEMENTS, CONVERSION ELEMENT AND OPTOELECTRONIC COMPONENT

Abstract

A method for producing a plurality of conversion elements (10) is specified, comprising providing a carrier substrate (1), introducing a converter material (3) into a matrix material (2), applying the matrix material (2) with the converter material (3) to individual regions (8) of the carrier substrate (1) in a non-continuous pattern, applying a barrier substrate (5) to the matrix material (2) and to the carrier substrate (1), and singulating the carrier substrate (1) with the matrix material (2) and the barrier substrate (5) into a plurality of conversion elements (10) along singulation lines (V), wherein the conversion elements (10) in each case comprise at least one of the regions (8) of the matrix material (2).

Claims

1. Method for producing a plurality of conversion elements, comprising the following steps: Providing a carrier substrate, Introducing a converter material into a matrix material, Applying the matrix material with the converter material on individual regions of the carrier substrate in a non-continuous pattern, Applying a barrier substrate on the matrix material and on the carrier substrate, Singulating the carrier substrate with the matrix material and the barrier substrate into a plurality of conversion elements along singulation lines, wherein the conversion elements in each case comprise at least one of the regions of the matrix material.

2. Method according to claim 1, in which the converting material comprises a quantum dot wavelength converter.

3. Method according to claim 1, in which the barrier substrate is applied as a casting on the matrix material and the carrier substrate.

4. Method according to claim 1, in which the carrier substrate and the barrier substrate consist of different materials.

5. Method according to claim 1, in which the barrier substrate is deposited on the matrix material and on the carrier substrate from a gas phase.

6. Method according to claim 1, in which the regions are formed in the carrier substrate as cavities.

7. Method according to claim 1, in which the application of the matrix material with the converter material is performed by means of a mask, wherein the mask is applied on the carrier substrate.

8. Method according to claim 7, in which the mask is removed again after the application of the matrix material.

9. Method according to claim 1, in which the application of the matrix material is effected under a protective gas atmosphere or vacuum by means of spray coating, dispersion, printing or jetting.

10. Conversion element, comprising: at least one semiconductor chip on a connecting plate, a carrier substrate on the at least one semiconductor chip, at least one region with a matrix material, wherein a converter material is embedded into the matrix material and the converter material comprises a quantum-dot wavelength converter, a barrier substrate, wherein the matrix material with the converter material is enclosed between the carrier substrate and the barrier substrate, and the barrier substrate encapsulates the arrangement of the matrix material, the semiconductor chip and the connecting plate and the carrier substrate, wherein the conversion element has a plate shape or a strip shape.

11. Optoelectronic component, comprising at least one semiconductor chip on a connecting plate and at least one conversion element according to claim 10, wherein the at least one semiconductor chip is assigned in each case at least one conversion element.

12. Optoelectronic component according to claim 11, wherein the conversion element has a strip shape and is irradiated by a plurality of semiconductor chips.

13. Optoelectronic component according to claim 11, wherein the conversion element is applied directly on an emission surface of the assigned semiconductor chip.

14. Optoelectronic component according to claim 11, in which the conversion element is spaced apart from the semiconductor chip and the emission surface thereof.

15. Method for producing a plurality of conversion elements, comprising the following steps: Providing a plurality of semiconductor chips on a connecting plate, Providing a carrier substrate and applying the carrier substrate on the semiconductor chips, Introducing a converter material into a matrix material, wherein the converter material comprises a quantum-dot wavelength converter, Applying the matrix material with the converter material on individual regions of the carrier substrate in a non-continuous pattern over the semiconductor chips, Applying a barrier substrate on the matrix material and on the carrier substrate, wherein the barrier substrate encapsulates the arrangement of the matrix material, the semiconductor chip and the board and the carrier substrate, Singulating the carrier substrate with the matrix material and the barrier substrate into a plurality of conversion elements with semiconductor chips along singulation lines, wherein the conversion elements in each case comprise at least one of the regions of the matrix material.

Description

[0049] Further advantages, advantageous embodiments and further developments result from the exemplary embodiments described in the following in conjunction with the Figures.

[0050] FIGS. 1a, 2, 3 and 4 show an embodiment of the method for producing a plurality of conversion elements.

[0051] FIG. 1b shows a side view of a conversion element.

[0052] FIGS. 5a, 5b, 5c and 5d show arrangements of conversion elements on optoelectronic components.

[0053] FIG. 6 shows an optoelectronic component with a conversion element.

[0054] Like or equal elements are provided with the same reference numerals throughout the figures. The integral parts illustrated in the figures as well as the size ratios between them are not considered to be made to scale.

[0055] FIG. 1a shows a sequence of method steps for producing multiple conversion elements 10 in a plan view. A carrier substrate 1 is provided in the first step. The carrier substrate 1 has a solid consistency and a rectangular layout, in order to serve as a mechanically-stable base for further components during the production method. Furthermore, it is also possible to provide the carrier substrate 1 in liquid form and to subsequently cure it. The carrier substrate 1 may advantageously consist of or contain a single layer or alternatively a multilayer structure. The multilayer structure contains or consists of various polymers, such as silicones, epoxide, PET, perylene or polysilazanes or contains or consists of different inorganic materials, such as SiO.sub.x, SiN.sub.x, Al.sub.2O.sub.3, TiO.sub.2 or ZrO.sub.2. The multilayer structure may further comprise a layer sequence of organic or inorganic materials. The carrier substrate 1 can advantageously be produced from thin glass and advantageously has a thickness of 50 m to 100 m.

[0056] In the next method step, multiple non-continuous regions 8 of a matrix material 2 comprising a quantum dot wavelength conversion material 3 are attached to the carrier substrate 1 in a non-continuous pattern. The regions 8 have a square structure, in particular.

[0057] The converter material 3 is advantageously introduced into the matrix material 2, wherein the matrix material is liquid, for example, and is cured after the introduction of the converter material. The matrix material 2 is a liquid polymer material such as silicone, acrylate or similar, for example. Subsequently, the matrix material with the converter material can advantageously be processed into a thin plate, wherein the plate has a thickness of 20 m to 200 m. Processing the matrix material into a thin plate is effected by means of slit casting, screen printing, stencil printing or compression molding. Subsequently, a singulation of the plate into a plurality of small plates can be effected by means of punching, sawing or cutting with blades or laser.

[0058] Allocating the regions 8 on the carrier substrate 1 can therefore advantageously be adapted to the respective need.

[0059] In the next method step, a barrier substrate 5 is applied on the matrix material 2 and the carrier substrate 1. Here, it is advantageously possible to apply the barrier substrate 5 in an already finished state or to shape it during application, for example the barrier substrate 5 additionally has a rigid consistency or is applied on the matrix material 2 and the carrier substrate 1 in a non-solid form, liquid form for example, and subsequently cured. A barrier substrate 5, which is not applied in solid phase on the matrix material 2 or the carrier substrate 1, can advantageously be changed and adapted in shape and design after or during application, for example, advantageously a desired shape of the outer surface and/or the edge surface can be achieved. After the application, the barrier substrate 5 is laminated and has an plan outer surface that faces away from the carrier substrate 1.

[0060] The carrier substrate 5 may advantageously consist of a single layer or alternatively a multilayer structure or contain such a structure. The multilayer structure contains or consists of, for example, various polymers, such as silicones, epoxide, PET, perylene or polysilazanes, or contains or consists of different inorganic materials, such as SiO.sub.x, SiN.sub.x, Al.sub.2O.sub.3, TiO.sub.2 or ZrO.sub.2 or contains or consists of layer sequences of organic and inorganic materials. The barrier substrate 5 can advantageously be produced of thin glass and advantageously has a thickness of 50 m to 100 m.

[0061] Preferably, the barrier substrate 5 completely encapsulates the matrix material and the carrier substrate 1, so that the all exposed surfaces of the matrix material are covered by the barrier substrate.

[0062] In the next method step, the carrier substrate 1 with the matrix material and barrier substrate 5 is singulized in multiple conversion elements 10 along the singulation lines V, wherein the conversion elements 10 respectively comprise one of the regions 8 of the matrix material.

[0063] The singulation lines V run in straight lines parallel to the side surface of the carrier substrate 1 and intersect at right angles.

[0064] Singulation is effected by means of singulation methods such as sawing, cutting with blades or lasers or punching. This way, a plurality of conversion elements 10 can advantageously be produced in a simple manner, which elements are shown in a side view in FIG. 1b with the carrier substrate 1 and the barrier substrate 5 and a cross-section through the matrix material 2.

[0065] FIG. 2 shows a sequence of method steps for producing multiple conversion elements 10 in a plan view. In addition to the course of the method of FIG. 1a, a mask 15 is applied on the carrier substrate 1 prior to the application of the matrix material 2. The mask 15 advantageously comprises rectangular or squared recesses 16 in which the matrix material 2 is introduced. According to FIG. 1a, after the introduction of the matrix material 2, the barrier substrate 5 is applied on the matrix material 2 and the mask 15. Alternatively, it is possible to remove the mask 15 from the carrier substrate 1 after the matrix material 2 is applied.

[0066] FIG. 3 shows a sequence of method steps for producing a plurality of conversion elements 10 in a plan view, in which the carrier substrate 1 has squared cavities K in which the matrix material 2 is introduced, in particular filled in as a liquid material. The shape of the cavities and their arrangement are arbitrary. FIG. 3 also shows a side view of the carrier substrate 1 with the cavities K along a sectional line S.

[0067] FIG. 4 shows a sequence of method steps for producing a plurality of conversion elements in a plan view, wherein the conversion elements are additionally arranged on semiconductor chips 21.

[0068] In a first method method step, a plurality of semiconductor chips 21 are provided on a connecting plate 11. Here, the semiconductor chips may be arranged in an arbitrary grid on the connecting plate.

[0069] In further method steps of the method according to the method of FIG. 1a, a carrier substrate 1, a matrix material 2 and a barrier substrate 5 are provided and applied over the semiconductor chips 21. Here, the matrix material 2 is spaced from the emission surface 22 of the semiconductor chip 21. The distance is selected by the thickness of the carrier substrate 1. Here, the barrier substrate 5 is applied in such a way that it encapsulates the entire arrangement of matrix material 2, carrier substrate 1, semiconductor chip 21 and connecting plate 11.

[0070] Singulation along singulation lines V is effected in the next method step, so that a plurality of optoelectronic components 20 with in each case one semiconductor chip 21 on a connecting plate 11 develops. In the last image sequence, FIG. 4 shows a side view of the optoelectronic component 20, in which the spacing of the matrix material 2 to the semiconductor chip 21 and the encapsulation of the matrix material 2, the carrier substrate 1 and the semiconductor chip 21 on the connecting plate 11 can be discerned.

[0071] FIG. 5a shows a direct arrangement of a conversion element 10 in an optoelectronic component 20, for example directly on an emission surface 22 of a semiconductor chip 21, wherein the conversion element 10 and the semiconductor chip 21 are casted within a cavity of a housing 9 as a QFN-package, for example.

[0072] FIG. 5b shows the optoelectronic component 20 according to FIG. 5a, wherein the conversion element 10 is not directly arranged on the semiconductor chip 21, but on the housing 9. A further converter material can be introduced into the casting 12 of the semiconductor chip 21 here.

[0073] FIG. 5c shows an optoelectronic component 20, wherein the conversion element 10 is attached directly on an emission surface 22 of a semiconductor chip 21 and a casting material 12 encapsulates the conversion element 10 and the semiconductor chip 21, in the shape of a lens, on a connecting plate 11.

[0074] FIG. 5d shows an optoelectronic component 20 according to FIG. 5c, wherein a casting 12 is not formed in the shape of a lens, does not cover a radiation surface of the conversion element 10, and comprises a converter material per se. The optoelectronic component may be designed as a chip-scale package (CSP), for example.

[0075] FIG. 6 shows an optoelectronic component 20 with a multitude of semiconductor chips 21 on a connecting plate 11, wherein the semiconductor chips 21 are covered with a strip-shaped conversion element 10.

[0076] The invention is not limited by the description by means of the exemplary embodiments. The invention rather comprises any new feature as well as any combination of features, particularly including any combination of features in the patent claims, even if this combination or this feature per se is not explicitly indicated in the patent claims or the exemplary embodiments.