Integration Of Metal Floating Gate In Non-Volatile Memory

Abstract

A non-volatile memory cell that includes a silicon substrate, source and drain regions formed in the silicon substrate (where a channel region of the substrate is defined between the source and drain regions), a metal floating gate disposed over and insulated from a first portion of the channel region, a metal control gate disposed over and insulated from the metal floating gate, a polysilicon erase gate disposed over and insulated from the source region, and a polysilicon word line gate disposed over and insulated from a second portion of the channel region.

Claims

1. A non-volatile memory cell, comprising: a silicon substrate; source and drain regions formed in the silicon substrate, wherein a channel region of the substrate is defined between the source and drain regions; a metal floating gate disposed over and insulated from a first portion of the channel region; a metal control gate disposed over and insulated from the metal floating gate; a polysilicon erase gate disposed over and insulated from the source region; and a polysilicon word line gate disposed over and insulated from a second portion of the channel region.

2. The non-volatile memory cell of claim 1, wherein the metal floating gate is insulated from the substrate by a layer of high K dielectric material.

3. The non-volatile memory cell of claim 2, wherein the high K dielectric material is at least one of HfO.sub.2, ZrO.sub.2, TiO.sub.2, Ta.sub.2O.sub.5, Al.sub.2O.sub.3, and nitridation treated oxide.

4. The non-volatile memory cell of claim 2, wherein the metal floating gate is further insulated from the substrate by a layer of oxide.

5. The non-volatile memory cell of claim 4, wherein the metal floating gate comprises TiN.

6. The non-volatile memory cell of claim 1, wherein the metal floating gate comprises at least one of TaN, TaSiN, TiN/TiAl/TiN, and TiN/AlN/TiN.

7. The non-volatile memory cell of claim 1, wherein the metal floating gate comprises Al and at least one of TiN and TaN.

8. The non-volatile memory cell of claim 1, wherein the metal floating gate comprises AlN and TiN.

9. The non-volatile memory cell of claim 1, wherein the metal control gate is insulated from the metal floating gate by one or more high K dielectric materials.

10. The non-volatile memory cell of claim 1, wherein the metal control gate is insulated from the metal floating gate by a layer of Al.sub.2O.sub.3 disposed between layers of HfO.sub.2.

11. The non-volatile memory cell of claim 1, wherein the metal control gate comprises at least one of TaN, TaSiN, TiN/TiAl/TiN, TiN/AlN/TiN and W.

12. A method of forming a non-volatile memory cell, comprising: forming source and drain regions in a silicon substrate, wherein a channel region of the substrate is defined between the source and drain regions; forming a first insulation layer on the substrate; forming a metal floating gate on the first insulation layer and over a first portion of the channel region; forming a second insulation layer on the metal floating gate; forming a metal control gate on the second insulation layer and over the metal floating gate; forming a polysilicon erase gate over and insulated from the source region; and forming a polysilicon word line gate over and insulated from a second portion of the channel region.

13. The method of claim 12, wherein the first insulation layer comprises a high K dielectric material.

14. The method of claim 13, wherein the high K dielectric material is at least one of HfO.sub.2, ZrO.sub.2, TiO.sub.2, Ta.sub.2O.sub.5, Al.sub.2O.sub.3, and nitridation treated oxide.

15. The method of claim 12, wherein the first insulation layer comprises an oxide layer and a layer of high K dielectric material.

16. The method of claim 15, wherein the metal floating gate comprises TiN.

17. The method of claim 12, wherein the metal floating gate comprises at least one of TaN, TaSiN, TiN/TiAl/TiN, and TiN/AlN/TiN.

18. The method of claim 12, wherein the metal floating gate comprises Al and at least one of TiN and TaN.

19. The method of claim 12, wherein the metal floating gate comprises AlN and TiN.

20. The method of claim 12, wherein the forming of the second insulation layer comprises: depositing insulation material on the metal floating gate; and annealing the deposited insulation material.

21. The method of claim 12, wherein the second insulation layer comprises one or more high K dielectric materials.

22. The method of claim 12, wherein the second insulation layer comprises a layer of Al.sub.2O.sub.3 disposed between layers of HfO.sub.2.

23. The method of claim 12, wherein the metal control gate comprises at least one of TaN, TaSiN, TiN/TiAl/TiN, TiN/AlN/TiN and W.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0007] FIGS. 1-11 are side cross sectional views illustrating the steps in forming the non-volatile memory cells of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

[0008] The present invention provides the ability to scale the memory cells down in height in a manner that reduces ballistic transport through the floating gate. FIG. 1 illustrates the beginning of the process in forming the memory cells. Starting with a silicon substrate 10, isolation regions 12 are formed in the substrate (defining active regions 14 there between) by forming an oxide layer 16 over the substrate 10, and a nitride layer 18 over the oxide layer 16. A photolithography masking step is used to cover the structure with photo resist except for the isolation regions 12 which are left exposed, whereby the oxide, nitride and substrate silicon are etched to form trenches 20 that extend down into the substrate 10. These trenches are then filled with oxide 22 by oxide deposition and oxide CMP (chemical mechanical polish), and oxide anneal, as shown in FIG. 1. This technique of forming isolation regions of STI (shallow trench isolation) oxide is well known in the art and not further discussed.

[0009] The memory cell formation discussed below is performed in the active regions 14 between adjacent STI isolation regions 12. After removal of nitride 18 and oxide 16, a floating gate (FG) insulation layer 24 is formed over the substrate 10. Insulation layer 24 can be SiO.sub.2, SiON, a high K dielectric (i.e. an insulation material having a dielectric constant K greater than that of oxide, such as HfO.sub.2, ZrO.sub.2, TiO.sub.2, Ta.sub.2O.sub.5, Al.sub.2O.sub.3, nitridation treated oxide or other adequate materials, etc.), or an IL/HK stack (where the interfacial layer (IL) is a thin silicon oxide layer disposed on the substrate, and the HK layer is disposed on the IL layer). Using an IL/HK stack will suppress tunneling leakage from the floating gate to the channel, and thus improve the data retention performance. A floating gate (FG) metal layer 26 is then deposited on insulation layer 24. The metal layer 26 can be any type of metal/alloy with a work function WF close to the silicon conduction band. Examples of preferred materials for the metal layer 26 include TaN, TaSiN, TiN/TiAl/TiN (i.e. sublayers of TiN, TiAl and TiN), TiN/AlN/TiN (i.e. sublayers of TiN, AlN and TiN), etc. When IL/HK is used for the insulation layer 24, TiN is preferred for the metal layer 26 due to process compatibility. The thickness of metal layer 26 can be around 100 A to get better WF stability and process control. The metal layer 26 contains no polysilicon. The resulting structure (in the active regions 14) is shown in FIG. 2.

[0010] It should be noted that TiN has an effective WF (EWF) that is suitable for PMOS (4.4 eV). However, with aluminum (Al) incorporation into the TiN layer, the EWF can be reduced. Titanium aluminum (TiAl), Al and AlN layer(s) can be introduced to reduced EWF. For example, the EWF for TiN/TiAl/TiN can be reduced to about 1 eV. AlN/TiN can also reduce the EWF to about 0.5 eV. TaN has an effective WF of about 3.75 eV, which is more suitable for NMOS, and can be tuned by Al incorporation.

[0011] An inter-gate dielectric (IGD) layer 28 is then formed over the metal layer 26. The IGD layer 28 can use high K dielectric material(s), as this will effectively reduce the ballistic leakage current and related reliability issues. A high K IGD layer 28 will also increase the control gate (CG) to floating gate (FG) coupling ratio to improve the program performance. The thickness of the IGD layer 28 can be around 100-200 A. A post deposition RTP anneal can be applied to densify the film to improve its quality and improve reliability. A tri-sublayer IGD layer 28 (i.e., HfO.sub.2/Al.sub.2O.sub.3/HfO.sub.2) is preferred because using only HfO.sub.2 may have higher leakage current if the subsequent annealing temperature is higher than its crystallization temperature. A control gate (CG) metal layer 30 is then deposited over the IGD layer 28. The CG metal layer 30 can be any type of n-type metal(s) such as TaN, TaSiN, TiN/TiAl/TiN, TiN/AlN/TiN, W, etc. The thickness of the CG metal layer 30 can be around 200 A. The CG metal layer 30 contains no polysilicon. A hard mask layer (HM) 32 is then formed on the CG metal layer 30. The HM layer 32 can be nitride, a Nitride/Oxide/Nitride tri-layer stack, or any other appropriate insulator. Layer 32 will protect against dry etch loss during the CG/IGD/FG stack etch. The resulting structure is shown in FIG. 3.

[0012] A photolithography masking step is performed to form photo resist over the structure, and to selectively remove the photo resist to leave portions of the underlying HM layer 32 exposed. An etch process is performed to remove the exposed portions of the HM layer 32 and CG metal layer 30. For a nitride HM layer 32, this etch can use a nitride and metallic TaN etch recipe, using the IGD layer 28 as an etch stop. The exposed portions of the IGD layer 28 (either HK or ONO) are then removed by a timed dry etch. The resulting structure is shown in FIG. 4 (after removal of the photoresist). This structure includes pairs of memory stack structures S1 and S2.

[0013] Oxide and nitride are deposited on the structure, followed by oxide and nitride etches that remove these materials except for spacers 34 thereof along the sides of the stacks S1 and S2. Sacrificial spacers 36 are formed along spacers 34 (e.g. by TEOS oxide deposition and anisotropic etch), as shown in FIG. 5. Photo resist 38 is then formed in the area between stacks S1 and S2 (herein referred to as the inner stack area), and extending partially over stacks S1 and S2 themselves. Those areas outside of stacks S1 and S2 (herein referred to as the outer stack areas) are left exposed by the photo resist 38. A WL Vt implantation is then performed, followed by an oxide etch that removes the sacrificial spacers 36 in outer stack areas, as shown in FIG. 6. After the photoresist 38 is removed, a metal etch is performed to remove those exposed portions of the FG metal layer 26 (i.e., those portions not protected by stacks S1 and S2). Oxide spacers 40 are then formed on the sides of stacks S1 and S2, preferably by HTO deposition, anneal and etch, as shown in FIG. 7. Processing steps for forming low and high voltage (LV and HV) logic devices on the same wafer can be performed at this time. For example, a masking step can be used to cover the memory cell area and the LV logic device area with photoresist, while leaving open the HV logic device area. RTO oxide, HTO deposition, logic well implantation and LV well activation steps can then be performed.

[0014] Photoresist is then formed over the outer stack areas and partially over stacks S1 and S2, leaving the inner stack area exposed. A HVII implantation is then performed for the inner stack area for forming the source region 44 (source line SL). An oxide etch is then used to remove the oxide spacers 40 and 36 and oxide layer 24 from the inner stack area. After photoresist removal, a HVII implant anneal is then performed to complete the formation of the source region 44. A tunnel oxide layer 46 is then formed in the inner stack area and on the stacks S1 and S2 by depositing oxide over the entire structure, as shown in FIG. 8 (which increases the thickness of spacers 40 and oxide layer 24). Additional processing steps for forming the LV and HV logic devices can be performed at this time. For example, masking steps and gate oxide layer formation steps can be performed to form layers of oxide of different thicknesses in the LV and HV logic device areas in preparation for forming the logic gates.

[0015] A thick layer of polysilicon (poly) 48 is deposited over the structure, followed by a chemical mechanical polish to reduce the height of the poly layer 48 to the tops of stacks S1 and S2. A further poly etch back is used to reduce the height of the poly layer 48 below the tops of stacks S1 and S2. A hard mask (e.g. nitride) layer 50 is then deposited on the structure, as shown in FIG. 9. A series of masking steps are performed to selectively expose the portions of the nitride and poly in the logic area, followed by nitride/poly etches to form the conductive poly logic gates, and to selectively expose portions of the outer stack areas, followed by nitride/poly etches to remove exposed portions of HM layer 50 and poly 48, which defines the outer edges of the remaining poly blocks 48a that will eventually become the word lines (WL), as shown in FIG. 10. After photoresist removal, a MCEL masking step is performed, followed by an implant step.

[0016] Spacers 52 are formed alongside the structure in the memory area by oxide and nitride depositions and etches. Masking and implant steps are performed to form drain regions (also referred to bit line contact regions) 54 on either side of the memory stacks S1 and S2. The final structure is shown in FIG. 11. The memory cells are formed in pairs sharing a single source region 44. Each memory cell includes a source region 44 and drain region 54 in the substrate 10 (defining a channel region 56 there between), a metal floating gate 26 disposed over a first portion of the channel region, a polysilicon erase gate 48b disposed over and insulated from the source region 44, a metal control gate 30 disposed over and insulated from the floating gate 26, and a polysilicon word line gate 48a disposed over and insulated from a second portion of the channel region. By reducing the overall height of the stacks S1 and S2 by using metal floating and control gates 26/30, cell height can be reduced from about 1200 A to about 600-700 A.

[0017] It is to be understood that the present invention is not limited to the embodiment(s) described above and illustrated herein. For example, references to the present invention herein are not intended to limit the scope of any claim or claim term, but instead merely make reference to one or more features that may be covered by one or more claim. Materials, processes and numerical examples described above are exemplary only, and should not be deemed to limit the claims. Further, not all method steps need be performed in the exact order illustrated, but rather in any order that allows the proper formation of the memory cell of the present invention. It is possible that some method step could be omitted. The control gate could instead be formed of polysilicon instead of a metal. Lastly, single layers of material could be formed as multiple layers of such or similar materials, and vice versa.

[0018] It should be noted that, as used herein, the terms over and on both inclusively include directly on (no intermediate materials, elements or space disposed therebetween) and indirectly on (intermediate materials, elements or space disposed therebetween). Likewise, the term adjacent includes directly adjacent (no intermediate materials, elements or space disposed therebetween) and indirectly adjacent (intermediate materials, elements or space disposed there between), mounted to includes directly mounted to (no intermediate materials, elements or space disposed there between) and indirectly mounted to (intermediate materials, elements or spaced disposed there between), and electrically coupled includes directly electrically coupled to (no intermediate materials or elements there between that electrically connect the elements together) and indirectly electrically coupled to (intermediate materials or elements there between that electrically connect the elements together). For example, forming an element over a substrate can include forming the element directly on the substrate with no intermediate materials/elements therebetween, as well as forming the element indirectly on the substrate with one or more intermediate materials/elements therebetween.