Ultrasonic generation device

Abstract

An ultrasonic generation device including an ultrasonic generation element having a frame, a first piezoelectric vibrator, and a second piezoelectric vibrator and configured to emit ultrasonic waves in a buckling tuning-fork vibration mode in which the first piezoelectric vibrator and the second piezoelectric vibrator vibrate in mutually opposite phases at the same frequency. Further, a housing receives the ultrasonic generation element and has ultrasonic emission ports, a first acoustic path extending from a vicinity of a vibration surface of the first piezoelectric vibrator to a vicinity of the ultrasonic emission ports, and a second acoustic path extending from a vicinity of a vibration surface of the second piezoelectric vibrator to the vicinity of the ultrasonic emission ports.

Claims

1. An ultrasonic generation device comprising: a housing having at least one ultrasonic emission port; and an ultrasonic generation element disposed in the housing, the ultrasonic generation element including: a frame having first and second surfaces and a through hole in a center portion thereof, a first planar piezoelectric vibrator bonded to the first surface of the frame, and a second planar piezoelectric vibrator bonded to the second surface of the frame, wherein the ultrasonic generation element is configured to emit ultrasonic waves in a buckling tuning-fork vibration mode such that the first and second planar piezoelectric vibrators vibrate in mutually opposite phases at a vibration frequency, wherein the ultrasonic generation element is disposed in the housing to define a first acoustic path that extends from a vibration surface of the first planar piezoelectric vibrator to the at least one ultrasonic emission port and a second acoustic path that extends from the second planar piezoelectric vibrator to the at least one ultrasonic emission port.

2. The ultrasonic generation device according to claim 1, wherein frequency-sound pressure characteristics representing a relationship between the vibration frequency and an output sound pressure of the ultrasonic waves emitted from the at least one ultrasonic emission port include a low-frequency side peak and a high-frequency side peak.

3. The ultrasonic generation device according to claim 1, wherein the low-frequency side peak and the high-frequency side peak have a frequency difference of at least 10 kHz.

4. The ultrasonic generation device according to claim 1, wherein the housing comprises a substrate and a cover member with a peripheral edge bonded to the substrate.

5. The ultrasonic generation device according to claim 4, wherein the ultrasonic generation element is disposed on the substrate.

6. The ultrasonic generation device according to claim 5, further comprising a plurality of pillow members disposed between the ultrasonic generation element and the substrate to form a fixed gap therebetween.

7. The ultrasonic generation device according to claim 4, wherein the cover members comprises an opening configured to receive the ultrasonic generation element.

8. The ultrasonic generation device according to claim 4, wherein the at least one ultrasonic emission port is disposed in the cover member.

9. The ultrasonic generation device according to claim 1, wherein the first surface is a lower surface of the frame, and the second surface is an upper surface of the frame.

10. The ultrasonic generation device according to claim 2, wherein the frequency-sound pressure characteristics includes an anacoustic zone between the low-frequency side peak and the high-frequency side peak where the output sound pressure becomes minimal.

11. The ultrasonic generation device according to claim 6, wherein the low-frequency side peak is formed by resonance of air with a vicinity of the vibration surface of the first planar piezoelectric vibrator as an antinode and a vicinity of the at least one ultrasonic emission port as a node.

12. The ultrasonic generation device according to claim 11, wherein the high-frequency side peak is formed by resonance of air with a vicinity of the vibration surface of the second piezoelectric vibrator as an antinode and a vicinity of the pillow members as a node.

13. The ultrasonic generation device according to claim 1, wherein the first and second planar piezoelectric vibrators are multimorph piezoelectric vibrators.

14. The ultrasonic generation device according to claim 13, wherein the multimorph piezoelectric vibrators are bimorph piezoelectric vibrators.

15. The ultrasonic generation device according to claim 1, wherein each of the first and second planar piezoelectric vibrators comprises an internal electrode and a pair of external electrodes disposed on upper and lower surfaces of the respective planar piezoelectric vibrator.

16. The ultrasonic generation device according to claim 15, wherein at least a portion of each of the internal electrodes and pairs of external electrodes are disposed in the through hole of the frame.

17. The ultrasonic generation device according to claim 15, further comprising four extended electrodes disposed on four corner portions of each of the first and second planar piezoelectric vibrators.

18. The ultrasonic generation device according to claim 17, wherein the four extended electrodes are electrically coupled to the pairs of external electrodes of the first and second planar piezoelectric vibrators.

19. The ultrasonic generation device according to claim 15, wherein the first planar piezoelectric vibrator is polarized and the direction of polarization between the internal electrode and a first external electrode of the pair of external electrodes and the direction of polarization between the internal electrode and a second external electrode of the pair of external electrodes is the same direction, and wherein the second planar piezoelectric vibrator is polarized and the direction of polarization between the internal electrode and a first external electrode of the pair of external electrodes and the direction of polarization between the internal electrode and a second external electrode of the pair of external electrodes is the same direction.

20. The ultrasonic generation device according to claim 19, wherein the direction of polarization of the first planar piezoelectric vibrator is opposite to the direction of polarization of the second planer piezoelectric vibrator.

Description

BRIEF DESCRIPTION OF DRAWINGS

(1) FIG. 1 is a perspective view of an ultrasonic generation device 100 according to an embodiment of the present invention.

(2) FIG. 2 is a cross-sectional view of the ultrasonic generation device 100 according to the embodiment of the present invention, taken along chain line X-X of FIG. 1.

(3) FIG. 3 is an exploded perspective view of an ultrasonic generation element 1 used in the ultrasonic generation device 100 according to the embodiment of the present invention.

(4) FIG. 4 includes explanatory views illustrating driving states of the ultrasonic generation device 100 according to the embodiment of the present invention.

(5) FIG. 5 is a graph showing the frequency-sound pressure characteristics of the ultrasonic generation device 100 according to the embodiment of the present invention.

(6) FIG. 6 is a graph showing the frequency-sound pressure characteristics when the frequency difference between two sound pressure peaks is changed in the ultrasonic generation device.

(7) FIG. 7 is a graph showing the temperature-sound pressure characteristics when the frequency difference between two sound pressure peaks is changed in the ultrasonic generation device.

(8) FIG. 8 is a graph showing the frequency-sound pressure characteristics when the size of ultrasonic emission ports is changed in the ultrasonic generation device.

(9) FIG. 9 is a graph showing the frequency-sound pressure characteristics when the size of a piezoelectric vibrator is changed in the ultrasonic generation device.

(10) FIG. 10 is a cross-sectional view of a conventional ultrasonic generation device 200.

(11) FIG. 11 is a simple cross-sectional view of an ultrasonic generation device 300 whose patent application has already been filed by the present applicant (not laid open).

(12) FIG. 12 is a graph showing the frequency-sound pressure characteristics of the ultrasonic generation device 300 whose patent application has already been filed by the present applicant (not laid open).

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

(13) An embodiment of the present invention will be described below with reference to the drawings.

(14) FIGS. 1 and 2 illustrate an ultrasonic generation device 100 according to an embodiment of the present invention. FIG. 1 is a perspective view, and FIG. 2 is a cross-sectional view taken along chain line X-X of FIG. 1. FIG. 3 illustrates an ultrasonic generation element 1 used in the ultrasonic generation device 100. FIG. 3 is an exploded perspective view.

(15) The ultrasonic generation device 100 includes the ultrasonic generation element 1.

(16) The ultrasonic generation element 1 includes a frame 2, a first bimorph piezoelectric vibrator 3, and a second bimorph piezoelectric vibrator 4. The frame 2 has a through hole 2a in its center portion. The first bimorph piezoelectric vibrator 3 is bonded to a lower principal surface of the frame 2 with an adhesive 5a, and the second bimorph piezoelectric vibrator 4 is bonded to an upper principal surface of the frame 2 with an adhesive 5b. That is, the through hole 2a of the frame 2 is covered with the first bimorph piezoelectric vibrator 3 and the second bimorph piezoelectric vibrator 4. The ultrasonic generation element 1 has a thickness of about 320 m, for example.

(17) The frame 2 is formed of, for example, a ceramic material (glass epoxy is adopted now), and has a thickness of about 200 m. The diameter of the through hole 2a is about 2.4 mm, for example. Instead of the through hole 2a, a groove may be provided in the center portion of the frame 2. That is, the frame 2 is not limited to a closed annular structure, but may be an annular structure that is partly open.

(18) The first bimorph piezoelectric vibrator 3 includes piezoelectric ceramics 3a shaped like a rectangular flat plate and formed of, for example, lead zirconate titanate (PZT). An inner electrode 3b is provided within the piezoelectric ceramics 3a, and outer electrodes 3c and 3d are provided on both principal surfaces of the piezoelectric ceramics 3a, respectively. For example, the inner electrode 3b and the outer electrodes 3c and 3d are formed of Ag or Pd. The inner electrode 3b is extended to two adjacent corners of the piezoelectric ceramics 3a. In contrast, each of the outer electrodes 3c and 3d is extended to two adjacent corners of the piezoelectric ceramics 3a where the inner electrode 3b is not extended. The thickness of the first bimorph piezoelectric vibrator 3 is about 60 m, for example.

(19) Similarly to the first bimorph piezoelectric vibrator 3, the second bimorph piezoelectric vibrator 4 also includes piezoelectric ceramics 4a shaped like a rectangular flat plate and formed of, for example, PZT. An inner electrode 4b is provided within the piezoelectric ceramics 4a, and outer electrodes 4c and 4d are provided on both principal surfaces of the piezoelectric ceramics 4a, respectively. The inner electrode 4b and the outer electrodes 4c and 4d are also formed of Ag or Pd, for example. The inner electrode 4b is extended to two adjacent corners of the piezoelectric ceramics 4a. In contrast, each of the outer electrodes 4c and 4d is extended to two adjacent corners of the piezoelectric ceramics 4a where the inner electrode 4b is not extended. The thickness of the second bimorph piezoelectric vibrator 4 is also about 60 m, for example.

(20) The piezoelectric ceramics 3a of the first bimorph piezoelectric vibrator 3 and the piezoelectric ceramics 4a of the second bimorph piezoelectric vibrator 4 are each polarized therein. In the piezoelectric ceramics 3a, the direction of polarization is the same between the outer electrode 3c and the inner electrode 3b and between the inner electrode 3b and the outer electrode 3d. Similarly, in the piezoelectric ceramics 4a, the direction of polarization is the same between the outer electrode 4c and the inner electrode 4b and between the inner electrode 4b and the outer electrode 4d. In contrast, the direction of polarization between the outer electrode 3c and the inner electrode 3b and between the inner electrode 3b and the outer electrode 3d in the piezoelectric ceramics 3a is opposite from the direction of polarization between the outer electrode 4c and the inner electrode 4b and between the inner electrode 4b and the outer electrode 4d in the piezoelectric ceramics 4a.

(21) Extended electrodes 6a, 6b, 6c, and 6d are provided at four corners of the ultrasonic generation element 1, respectively. Two adjacent extended electrodes 6a and 6b are electrically connected to the inner electrode 3b of the piezoelectric ceramics 3a and the inner electrode 4b of the piezoelectric ceramics 4a. In contrast, two remaining adjacent extended electrodes 6c and 6d are electrically connected to the outer electrodes 3c and 3d of the piezoelectric ceramics 3a and the outer electrodes 4c and 4d of the piezoelectric ceramics 4a. (While the extended electrodes 6a and 6d are illustrated in FIG. 2, illustrations of the extended electrodes 6b and 6c are omitted, and the extended electrodes 6b and 6c are not illustrated in any of the drawings.) The extended electrodes 6a, 6b, 6c, and 6d are formed of Ag, for example.

(22) The ultrasonic generation device 100 further includes a housing composed of a substrate 7 and a cover member 8.

(23) The substrate 7 is formed of, for example, glass epoxy, and is shaped like a rectangular flat plate. A plurality of land electrodes (not illustrated) are provided on an upper principal surface of the substrate 7. The ultrasonic generation element 1 is mounted on the substrate 7 by bonding the extended electrodes 6a, 6b, 6c, and 6d of the ultrasonic generation element 1 to the land electrodes with pillow members 9 formed of conductive adhesive. The ultrasonic generation element 1 is mounted on the substrate 7 with a fixed gap being disposed therebetween.

(24) The cover member 8 is formed of, for example, nickel silver, and has an opening 8a that receives the ultrasonic generation element 1. The cover member 8 further has rectangular ultrasonic emission ports 8b in its top surface. While any number of ultrasonic emission ports 8b can be provided, four ultrasonic emission ports 8b are provided in the embodiment. The ultrasonic generation element 1 is received in the opening 8a, a peripheral edge of the opening 8a of the cover member 8 is bonded to the upper principal surface of the substrate 7, for example, with adhesive (not illustrated). The ultrasonic generation element 1 is mounted on the substrate 7 with a fixed gap being disposed between the ultrasonic generation element 1 and the cover member 8.

(25) In the ultrasonic generation device 100, a first acoustic path R1 and a second acoustic path R2 are formed by the gaps provided between the ultrasonic generation element 1 and an inner surface of the housing composed of the substrate 7 and the cover member 8. The first bimorph piezoelectric vibrator 3 has a vibration surface F1 opposed to the inner surface of the housing. The second bimorph piezoelectric vibrator 4 has a vibration surface F2 opposed to the inner surface of the housing. The first acoustic path R1 extends from the vibration surface F1 of the first bimorph piezoelectric vibrator 3 to the ultrasonic emission ports 8b. The second acoustic path R2 extends from the vibration surface F2 of the second bimorph piezoelectric vibrator 4 to the ultrasonic emission ports 8b.

(26) Since the ultrasonic generation element 1 is bonded at four corners to the substrate 7 with the pillow members 9, propagation of ultrasonic waves emitted from the ultrasonic generation element 1 is not hindered.

(27) A description will now be given of a driving state of the ultrasonic generation device 100 of the embodiment (a driving state of the ultrasonic generation element 1).

(28) FIGS. 4(A) and 4(B) illustrate states in which a driving signal with a predetermined frequency is applied to the ultrasonic generation element 1 in the ultrasonic generation device 100.

(29) The first bimorph piezoelectric vibrator 3 and the second bimorph piezoelectric vibrator 4 that constitute the ultrasonic generation element 1 include the inner electrodes 3b and 4b and the outer electrodes 3c, 3d, 4c, and 4d, as described above, and are polarized, as described above. Hence, when the driving signal is applied, the first bimorph piezoelectric vibrator 3 and the second bimorph piezoelectric vibrator 4 vibrate at the same frequency in mutually opposite phases, and repeat the states illustrated in FIGS. 4(A) and 4(B). That is, the ultrasonic generation element 1 vibrates in a buckling tuning-fork vibration mode, and emits ultrasonic waves from each of the first bimorph piezoelectric vibrator 3 and the second bimorph piezoelectric vibrator 4.

(30) Ultrasonic waves emitted from the first bimorph piezoelectric vibrator 3 pass through the first acoustic path R1 and propagate to the ultrasonic emission ports 8b. Ultrasonic waves emitted from the second bimorph piezoelectric vibrator 4 pass through the second acoustic path R2, and propagate to the ultrasonic emission ports 8b. These ultrasonic waves are combined near the ultrasonic emission ports 8b to increase the output sound pressure, and are then emitted outside. In this way, the ultrasonic waves emitted from the two piezoelectric vibrators are combined in the ultrasonic generation device of the present invention. Hence, ultrasonic waves having a high output sound pressure can be emitted outside.

(31) FIG. 5 shows the frequency-sound pressure characteristics of the ultrasonic generation device 100 of the embodiment. The frequency represents a frequency of a driving signal to be applied to the ultrasonic generation element 1 (first bimorph piezoelectric vibrator 3, second bimorph piezoelectric vibrator 4). The sound pressure represents an output sound pressure of ultrasonic waves emitted from the ultrasonic emission ports 8b. As described above, the frequency-sound pressure characteristics are values calculated by FEM. However, since it is assumed that the amplitude of the vibrator is fixed over the entire frequency range to clarify the degree of influence of resonance, the influence of resonance of the vibrator is not reflected.

(32) As shown in FIG. 5, in the frequency-sound pressure characteristics of the ultrasonic generation device 100, a low-frequency side peak Lp serving as a peak of sound pressure, where the output sound pressure becomes maximal, exists near 40 kHz, a high-frequency side peak Hp serving as a peak of sound pressure, where the output sound pressure becomes maximal, exists near 50.5 kHz, and an anacoustic zone Ns, where the output sound pressure becomes minimal, exists near 49 kHz.

(33) The low-frequency side peak Lp is formed by resonance of air using the vicinity of the vibration surface F1 of the first bimorph piezoelectric vibrator 3 as an antinode and each of the ultrasonic emission ports 8b as a node. At this time, in the ultrasonic generation device 100, the sound pressure near the vibration surface F1 of the first bimorph piezoelectric vibrator 3 becomes the highest, and the sound pressure near the ultrasonic emission ports 8b becomes the lowest. Ultrasonic waves that are generated in the first bimorph piezoelectric vibrator 3 and propagate through the first acoustic path R1 and ultrasonic waves that are generated in the second bimorph piezoelectric vibrator 4 and propagate through the second acoustic path R2 are in phase with each other.

(34) The anacoustic zone Ns is formed when the ultrasonic waves that are generated in the first bimorph piezoelectric vibrator 3 and propagate through the first acoustic path R1 and the ultrasonic waves that are generated in the second bimorph piezoelectric vibrator 4 and propagate through the second acoustic path R2 are opposite in phase.

(35) The high-frequency side peak Hp is formed by resonance of air using the vicinity of the vibration surface F2 of the second bimorph piezoelectric vibrator 4 as an antinode and each of the pillow members 9 as a node. Although the resonance itself occurs within the ultrasonic generation device 100, since the vicinities of the ultrasonic emission ports 8b are open ends, ultrasonic waves having a comparatively high sound pressure are emitted from the ultrasonic emission ports 8b. At this time, in the ultrasonic generation device 100, the sound pressure near the vibration surface F2 of the second bimorph piezoelectric vibrator 4 becomes the highest, and the sound pressure near the pillow members 9 becomes the lowest. The ultrasonic waves that are generated in the first bimorph piezoelectric vibrator 3 and propagate through the first acoustic path R1 and the ultrasonic waves that are generated in the second bimorph piezoelectric vibrator 4 and propagate through the second acoustic path R2 are opposite in phase.

(36) The ultrasonic generation device 100 (ultrasonic generation element 1) most efficiently emits ultrasonic waves when being driven at a frequency near 40 kHz serving as the low-frequency side peak Lp where the output sound pressure becomes maximal.

(37) In the present invention, the frequency difference between the low-frequency side peak Lp and the high-frequency side peak Hp is set at 10 kHz or more. In the embodiment, the frequency difference between the low-frequency side peak Lp and the high-frequency side peak Hp is set at 10.5 kHz. In this case, the frequency of the acoustic zone Ns is sufficiently apart from the frequency of the driving signal for driving the ultrasonic generation device 100 (ultrasonic generation element 1). Hence, the output sound pressure does not rapidly fall, for example, even if the temperature of the usage environment changes.

(38) The reason why the output sound pressure of the ultrasonic generation device changes with a change in temperature of the usage environment is as follows. That is, the output sound pressure of the ultrasonic generation device is greatly influenced by resonance of air occurring in the acoustic paths of the ultrasonic generation device. The frequency at which the resonance occurs changes with acoustic velocity, and the acoustic velocity changes with temperature. That is, since the acoustic velocity (m/s) is expressed by 331.5+0.61 t (t: degrees C.), for example, when the temperature of the usage environment falls, the acoustic velocity decreases, and the frequencies of the low-frequency side peak Lp, the anacoustic zone Ns, and the high-frequency side peak Hp also decrease totally. However, the frequency of the driving signal for driving the ultrasonic generation device 100 (ultrasonic generation element 1), which is initially set at a frequency near the low-frequency side peak Lp, does not change even if the temperature of the usage environment changes. As a result, the frequency of the driving signal approaches the frequency of the anacoustic zone Ns, and thus, the output sound pressure falls rapidly.

(39) FIG. 6 shows the frequency-sound pressure characteristics when the frequency difference between the low-frequency side peak Lp and the high-frequency side peak Hp is changed in an ultrasonic generation device having a structure similar to that adopted in the embodiment. As shown in FIG. 6, when the frequency difference between the low-frequency side peak Lp and the high-frequency side peak Hp is 5.5 kHz or 8.0 kHz, the frequency of the driving signal for driving the ultrasonic generation device (frequency near the low-frequency side peak Lp) is close to the frequency of the anacoustic zone Ns. In contrast, when the frequency difference between the low-frequency side peak Lp and the high-frequency side peak Hp is 10.5 kHz or 14.0 kHz, the frequency of the driving signal for driving the ultrasonic generation device (frequency near the low-frequency side peak Lp) is sufficiently apart from the frequency of the anacoustic zone Ns.

(40) FIG. 7 shows the sound pressure change amounts at temperatures when the frequency difference between the low-frequency side peak Lp and the high-frequency side peak Hp is changed in the ultrasonic generation device having a structure that conforms to that adopted in the embodiment. In FIG. 7, the output sound pressure of the ultrasonic generation device when the temperature of the usage environment is 25 C. is used as the reference.

(41) As shown in FIG. 7, in a case in which the frequency difference between the low-frequency side peak Lp and the high-frequency side peak Hp is 5.5 kHz or 8.0 kHz, when the temperature of the usage environment falls, the output sound pressure falls more than in other examples. For example, in a case in which the frequency difference between the low-frequency side peak Lp and the high-frequency side peak Hp is 5.5 kHz, when the temperature of the usage environment falls to 20 C. or less, the output sound pressure falls more than in the other examples. In a case in which the frequency difference between the low-frequency side peak Lp and the high-frequency side peak Hp is 8.0 kHz, when the temperature of the usage environment falls to 0 C. or less, the output sound pressure falls more than in the other examples. This seems because, when the temperature of the usage environment falls, the frequency of the anacoustic zone Ns approaches the frequency of the driving signal (frequency near the low-frequency side peak Lp) and the output sound pressure falls.

(42) In contrast, when the frequency difference between the low-frequency side peak Lp and the high-frequency side peak Hp is 10.5 kHz or 14.0 kHz, even if the temperature of the usage environment falls, the output sound pressure falls less than when the frequency difference is 5.5 kHz or 8.0 kHz. This seems because, even if the frequency of the anacoustic zone Ns approaches the frequency of the driving signal (frequency near the low-frequency side peak Lp) with a fall in temperature of the usage environment, the output sound pressure does not fall since both the frequencies are sufficiently apart from each other.

(43) It is known from the above that, when the frequency difference between the low-frequency side peak Lp and the high-frequency side peak Hp is set at 10 kHz or more as in the present invention, even if the temperature of the usage environment changes, the output sound pressure does not fall and a stable output sound pressure can be obtained.

(44) Next, a description will be given of a method for setting the frequency difference between the low-frequency side peak Lp and the high-frequency side peak Hp at 10 kHz or more in the present invention. To set the frequency difference between the low-frequency side peak Lp and the high-frequency side peak Hp at 10 kHz or more in the present invention, it is only necessary to adjust (design) the dimensions of the members and parts that constitute the ultrasonic generation device so that each of the frequency of the low-frequency side peak Lp and the frequency of the high-frequency side peak Lp takes a desired value.

(45) The low-frequency side peak Lp can be set at a desired frequency by adjusting the length of the acoustic path (first acoustic path R1) from the vicinity of the vibration surface F1 of the first bimorph piezoelectric vibrator 3 to the vicinity of the ultrasonic emission ports 8b or the size or shape of the ultrasonic emission ports 8b. Specifically, the frequency of the low-frequency side peak Lp can be moved to a lower side by increasing the length of the acoustic path (first acoustic path R1) from the vicinity of the vibration surface F1 of the first bimorph piezoelectric vibrator 3 to the vicinity of the ultrasonic emission ports 8b. Alternatively, the frequency of the low-frequency side peak Lp can be moved to the lower side by reducing the size of the ultrasonic emission ports 8b.

(46) The high-frequency side peak Hp can be set at a desired frequency by adjusting the size of the ultrasonic generation element 1 or the housing. Specifically, the frequency of the high-frequency side peak Hp can be moved to a lower side by increasing the size of the ultrasonic generation element 1 or the housing.

(47) FIG. 8 shows the frequency-sound pressure characteristics when the size of the ultrasonic emission ports is changed in the ultrasonic generation device having a structure similar to that adopted in the embodiment. Here, the ultrasonic emission ports are square in plan view, and the length of each side of the ultrasonic emission ports is changed. Other dimensions are fixed. As shown in FIG. 8, as the size of the ultrasonic emission ports is reduced by shortening each side of the ultrasonic emission ports from 1.6 mm to 1.4 mm, and further from 1.4 mm to 1.2 mm, the frequency of the low-frequency side peak Lp and the frequency of the high-frequency side peak Hp move to the lower side.

(48) FIG. 9 shows the frequency-sound pressure characteristics when the size of the first bimorph piezoelectric vibrator and the second bimorph piezoelectric vibrator (that is, ultrasonic generation element) is changed in the ultrasonic generation device having a structure similar to that adopted in the embodiment. Here, the first bimorph piezoelectric vibrator and the second bimorph piezoelectric vibrator are square in plan view, and the length of each side of the vibrators is changed. Other dimensions are fixed. As shown in FIG. 9, as the length of each side of the first bimorph piezoelectric vibrator and the second bimorph piezoelectric vibrator increases from 3.2 mm to 3.3 mm, from 3.3 mm to 3.4 mm, and from 3.4 mm to 3.5 mm, the frequency of the low-frequency side peak Lp and the frequency of the high-frequency side peak Hp move to the lower side. This seems because, when the size of the ultrasonic generation element is increased by increasing the size of each of the piezoelectric vibrators, the resonance paths are lengthened and this decreases the resonance frequencies.

(49) When the frequency of the high-frequency side peak Hp is moved by adjusting the size of the ultrasonic generation element or the housing, the frequency of the low-frequency side peak Lp also moves. Specifically, when the frequency of the high-frequency side peak Hp is moved to the lower side by adjusting the size of the ultrasonic generation element or the housing, the frequency of the low-frequency side peak Lp also moves to the lower side. That is, when the dimensions of the members and parts that constitute the ultrasonic generation device are adjusted to move the frequency of the high-frequency side peak Hp, the frequency of the low-frequency side peak Lp is also influenced. Therefore, the frequency of the high-frequency side peak Hp and the frequency of the low-frequency side peak Lp are preferably adjusted not by only the size of the ultrasonic generation element or the housing, by a combination of the size of the ultrasonic generation element or the housing and the size or shape of the ultrasonic emission ports. Specifically, for example, the frequency difference between the low-frequency side peak Lp and the high-frequency side peak Hp may be controlled by adjusting the size or shape of the ultrasonic emission ports, and the frequency of the low-frequency side peak Lp may be controlled by adjusting the size of the ultrasonic generation element or the housing.

(50) The ultrasonic generation device 100 having the above-described structure according to the embodiment of the present invention is manufactured by the following method, for example.

(51) First, the first bimorph piezoelectric vibrator 3 and the second bimorph piezoelectric vibrator 4 are produced. Specifically, a plurality of piezoelectric ceramic green sheets each having a predetermined shape are prepared, and conductive paste for forming the inner electrodes 3b and 4b and the outer electrodes 3c, 3d, 4c, and 4d is printed on surfaces of the piezoelectric ceramic green sheets in a predetermined shape. Next, the predetermined piezoelectric ceramic green sheets are stacked, pressed, and fired at a predetermined profile, and the first bimorph piezoelectric vibrator 3 with the inner electrode 3b and the outer electrodes 3c and 3d and the second bimorph piezoelectric vibrator 4 with the inner electrode 4b and the outer electrodes 4c and 4d are obtained. The outer electrodes 3c, 3d, 4c, and 4d may be formed by printing or sputtering after the stacked piezoelectric ceramic green sheets are fired.

(52) Next, the frame 2 previously formed in a predetermined shape is prepared, and the first bimorph piezoelectric vibrator 3 and the second bimorph piezoelectric vibrator 4 are bonded to both principal surfaces of the frame 2 with the adhesives 5a and 5b, respectively, so that the ultrasonic generation element 1 is obtained.

(53) Next, the extended electrodes 6a, 6b, 6c, and 6d are formed at four corners of the ultrasonic generation element 1 by a technique such as sputtering.

(54) Next, the substrate 7 and the cover member 8 each previously formed in a predetermined shape are prepared, the ultrasonic generation element 1 is mounted on the substrate 7 with the conductive adhesive 9, and the cover member 8 is bonded to the upper principal surface of the substrate 7 with adhesive (not illustrated), so that the ultrasonic generation device 100 is completed.

(55) The structure, the driving state, and the exemplary manufacturing method for the ultrasonic generation device 100 according to the first embodiment of the present invention have been described above. However, the ultrasonic generation device of the present invention is not limited to the above description, and various changes can be made in accordance with the purport of the invention.

(56) For example, the first and second vibrators that constitute the ultrasonic generation element 1 may be vibrators of other types, such as unimorph piezoelectric vibrators or multimorph piezoelectric vibrators, instead of the first and second bimorph piezoelectric vibrators 3 and 4.

REFERENCE SIGNS LIST

(57) 1 ultrasonic generation element 2 frame 2a through hole 3 first bimorph piezoelectric vibrator 4 second bimorph piezoelectric vibrator 3a, 4a piezoelectric ceramics 3b, 4b inner electrode 3c, 3d, 4c, 4d outer electrode 5a, 5b adhesive 6a, 6b, 6c, 6d extended electrode 7 substrate 8 cover member 8a opening 8b ultrasonic emission port 9 pillow member 100 ultrasonic generation device F1 vibration surface of first bimorph piezoelectric vibrator 3 F2 vibration surface of second bimorph piezoelectric vibrator 4 R1 first acoustic path R2 second acoustic path