Textile component and method for producing a textile component

Abstract

The invention relates to an embodiment in which the textile component comprises at least one flexible thread that can be woven. A plurality of semiconductor columns are attached in or on the thread and are configured to generate radiation. Furthermore, a plurality of electrical lines are located in or on the thread, by means of which lines the semiconductor columns are electrically contacted. An average height (H) of the semiconductor columns in a direction transverse to a longitudinal direction (L) of the thread is at most 20% of an average diameter (D) of the thread.

Claims

1. A textile component comprising at least one flexible, weavable thread, wherein a multiplicity of semiconductor pillars are secured in or on the thread, the semiconductor pillars are configured for generating radiation, a plurality of electrical lines are fitted in or on the thread, the semiconductor pillars are electrically contacted by means of the electrical lines, and an average height of the semiconductor pillars in a transverse direction with respect to a longitudinal direction of the thread is at most 20% of an average diameter of the thread, the thread comprises a core material and a cladding layer, the semiconductor pillars are either restricted to the cladding layer or introduced directly into the core material, the semiconductor pillars in or on the thread or in at least one fiber with the semiconductor pillars are oriented alternately, such that apices and base points of the semiconductor pillars alternately point toward a center of the thread or of a relevant fiber, and the plurality of electrical lines include respective electrical line sections that run along the longitudinal direction and connect, on alternating sides of the thread, an apex and a base point of adjacent semiconductor pillars.

2. The textile component as claimed in claim 1, in which the thread is composed of a plurality of fibers, wherein at least one of the fibers is provided with the semiconductor pillars and the electrical lines.

3. The textile component as claimed in claim 1, in which the semiconductor pillars are restricted to the cladding layer, and wherein the core material is responsible for at least 90% of a tensile strength of the thread.

4. The textile component as claimed in claim 3, in which the electrical lines extend on both sides of the cladding layer and the core material is free of the electrical lines.

5. The textile component as claimed in claim 3, in which the core material is only partly covered by the electrical lines and the cladding layer.

6. The textile component as claimed in claim 3, in which the respective electrical line sections are positioned on opposing sides of the thread alternately on an inner side of the cladding layer, facing the core material, and on an outer side of the cladding layer, facing away from the core material, such that the semiconductor pillars are electrically interconnected in series.

7. The textile component as claimed in claim 2, in which the semiconductor pillars are introduced directly into the core material of the thread or into the core material of the at least one relevant fiber, wherein the core material contributes to the average diameter of the thread or of the relevant fiber to the extent of at least 80%.

8. The textile component as claimed in claim 1, in which the semiconductor pillars and also conductor tracks are covered by a light-transmissive protective sheath.

9. The textile component as claimed in claim 1, comprising a plurality of the threads with the semiconductor pillars, wherein the threads are woven in a fabric and the fabric additionally comprises a multiplicity of woven threads.

10. The textile component as claimed in claim 9, furthermore comprising at least one electrically conductive contact thread, wherein the contact thread runs transversely with respect to at least one portion of the threads with the semiconductor pillars, and at least some of said threads are electrically connected by means of the contact thread.

11. The textile component as claimed in claim 9, in which at least one portion of the woven threads and/or at least one portion of the threads with the semiconductor pillars are light-transmissive and light-guiding.

12. The textile component as claimed in claim 9, in which the fabric has a mesh periodicity M of between 50 μm and 2 mm inclusive and the following holds true in each case for a distance between adjacent semiconductor pillars along the longitudinal direction: W=M×n±0.1 M where n ∈ N.

13. The textile component as claimed in claim 1, in which an average distance between adjacent semiconductor pillars along the longitudinal direction is at least double the average diameter of the thread, wherein the average diameter of the thread is at least 30 μm and at most 300 μm, the average height (H) of the semiconductor pillars is between 0.5 μm and 5 μm inclusive and the thread extends along the longitudinal direction at least 25 m.

14. The textile component as claimed in claim 1, furthermore comprising at least one induction coil, wherein the induction coil is configured to energize the semiconductor pillars by means of an alternating electrical field generated externally.

15. A method for producing a textile component as claimed in claim 2, comprising: Providing a growth substrate having the semiconductor pillars, Fitting or introducing the semiconductor pillars on the thread or on the fiber and detaching from the growth substrate, and Electrically contacting the semiconductor pillars.

16. The method as claimed in the claim 15, in which the semiconductor pillars still situated on the growth substrate are embossed into a material on the thread or on the fiber, whereupon said material is solidified and, by means of said material being removed from the growth substrate, the semiconductor pillars are detached together with said material from the growth substrate.

Description

IN THE FIGURES

(1) FIGS. 1A to 1F show schematic sectional illustrations of method steps of a method described here for producing exemplary embodiments of textile components,

(2) FIGS. 1G and 1H show schematic perspective illustrations of method steps of a method described here,

(3) FIGS. 2A to 2C show schematic perspective illustrations of method steps of a method described here,

(4) FIG. 3 shows a schematic perspective illustration of one exemplary embodiment of a textile component described here,

(5) FIG. 4 shows a schematic sectional illustration of one exemplary embodiment of a textile component described here,

(6) FIGS. 5 to 12 show schematic plan views of exemplary embodiments of textile components described here,

(7) FIGS. 13 and 14 show schematic sectional illustrations of exemplary embodiments of textile components described here, and

(8) FIGS. 15 and 16 show schematic perspective illustrations of exemplary embodiments of textile components described here.

(9) FIG. 1 schematically illustrates a method for producing a textile component 1. In accordance with FIG. 1A, semiconductor pillars 3 are provided on a growth substrate 30. Optionally, a growth layer 37 is situated on the growth substrate 30. The growth layer 37 is preferably partly covered by a mask layer 38.

(10) The semiconductor pillars 3 preferably grow out of openings in the mask layer 38. The semiconductor pillars 3 comprise a semiconductor core 31 followed by an active zone 32, a semiconductor shell 33 and optionally a current distribution layer 34. The layers 32, 33, 34 in each case copy the shape of the semiconductor core 31. Preferably, the semiconductor pillars 3 and thus the layers 31, 32, 33 are based on the material system InGaN and are configured for generating blue light, for instance. The current distribution layer 34 can be formed by a semiconductor material, by a transparent conductive oxide such as ITO or else by a reflective material such as a metal, for example silver. A height H of the semiconductor pillars 3 is in the range of a few micrometers;

(11) a diameter of the semiconductor pillars 3 is approximately 1 μm, for example.

(12) FIG. 1B illustrates that an intermediate carrier 91 is provided. An island-shaped detachment matrix 92 can be situated on the intermediate carrier 91. Some of the semiconductor pillars 3 are embossed into the islands of the detachment matrix 92, in particular by means of hot embossing. After the embossing of the semiconductor pillars 3, the detachment matrix is correspondingly hardened, for instance by reducing the temperature or by photochemical curing. Afterward, the semiconductor pillars 3 remaining in the detachment matrix 92 are detached from the growth substrate 30. This is illustrated in FIG. 1C. This type of detachment can also be referred to as tether lift-off.

(13) The use of an intermediate carrier 91, as illustrated in FIGS. 1B and 1C, is optional.

(14) A connection material 93 can thereupon be molded around the islands of the detachment matrix 92 with the semiconductor pillars 3. The connection material 93 is a thermoplastic material or a silicone, for example. The connection material 93 makes it possible to integrate the semiconductor pillars 3 fixedly into a common body. In accordance with FIG. 1D, here apices 35 of the semiconductor pillars 3 and also base points 36 of the semiconductor pillars 3 point in the same direction in each case.

(15) By contrast, the semiconductor pillars 3 in FIG. 1E are oriented alternately, such that the apices 35 and the base points 36 point upward and downward alternately. Both configurations as depicted in FIGS. 1D and 1E can correspondingly be used in all exemplary embodiments.

(16) It is possible for a respective insulation layer 94 to be situated at the base points 36. The insulation layer 94 can be formed by a material of the mask layer 38 or by a separate material. The insulation layer 94 can terminate flush with the islands of the detachment matrix 92 or be set back relative to the detachment matrix 92 or else project laterally beyond the latter.

(17) On the apices 35 and also on the base points 36, electrical connections 43 are fitted, for example composed of a transparent conductive oxide or at least on one side of the semiconductor pillars 3, composed of a metal that can be fashioned as a mirror for the radiation generated during operation. By way of the connections 43, the semiconductor pillars 3 are electrically contactable directly.

(18) Optionally, a respective energization layer 39 is situated on the semiconductor pillars 3, in particular on the semiconductor shell 33 or on the current distribution layer 34. The energization layer 39 is composed of a transparent conductive oxide or composed of a metal. It is possible for the energization layer 39 on the apices 35 to be electrically connected in each case to the associated connections 43. The energization layer 39, like the layers 31, 32, 33, 34, as well, can project into the insulation layer 94 or extend as far as the insulation layer 94.

(19) FIG. 1F illustrates that electrical lines 4 are fitted on the connection material 93 and also on the connections 43. A series connection of the semiconductor pillars 3 can be obtained by way of the electrical lines 4. If the configuration from FIG. 1D is used, the semiconductor pillars 3 can also be electrically connected in parallel. Mixed forms comprising a parallel connection and a series connection are likewise possible. The electrical lines 4 are formed by silver nanowires, for example, which can be applied by printing.

(20) In accordance with FIG. 1F, the lines 4 run alternately on an underside and on a top side of the connection material 93. In this case, the connection material 93 can be fashioned in the shape of a plate. Alternatively, the connection material 93 can run in an elongated manner and already be fashioned in the shape of a fiber or in the shape of a thread, see FIG. 1G. In accordance with FIG. 1G, the connection material 93 has a circular or round cross section.

(21) If the connection material 93 is fashioned in the shape of a plate, as indicated in FIG. 1F, for instance, it is possible to extract narrow strips from the connection material 93, thus giving rise to fiberlike or threadlike structures, for example having a square or rectangular cross section, different than the round cross section in FIG. 1G. Independently of the cross-sectional shape of a corresponding core material 91, formed by the connection material 93, the further processing can be carried out in the same way in each case.

(22) The method step in FIG. 1H illustrates that a cladding layer 22 is produced around the connection material 93. To that end, the connection material 93 is guided through an extrusion nozzle, for example, in which the cladding layer 22 is produced around the core material 21.

(23) The core material 21 has a diameter substantially the same as the height of the semiconductor pillars 3. An average diameter D of the thread 10 produced, composed of the core material 21 and the cladding layer 22, is preferably significantly greater than the height H of the semiconductor pillars 3. In this case, a mechanical stabilization of the thread 10 is primarily provided by the cladding layer 22.

(24) The semiconductor pillars 3 can be at a comparatively large distance W from one another along a longitudinal direction L of the thread 10. The distance W can be in the range of a plurality of millimeters. The average diameter D of the thread is preferably between 0.1 mm and 1 mm inclusive. By contrast, the diameter of the core material 21 can be at least 10 μm and/or at most 1 mm.

(25) The method step in FIG. 2A illustrates that the detachment matrix 92 in the form of islands is fitted on the core material 21. The detachment matrix 92 preferably only partly covers the semiconductor core 21, for example along a line running straight parallel to the longitudinal direction L. The core material 21 is very large in comparison with a thickness of the detachment matrix 22. In this configuration, a diameter of the core material 21 can exceed a thickness of the detachment matrix 92 by a factor of 10 or 20 or 100, for example. The core material 21 is composed of a plastic or is composed of a glass, for example.

(26) FIG. 2B illustrates that the semiconductor pillars 3 are transferred into the detachment matrix 92 analogously to FIGS. 1B and 1C, proceeding from a growth substrate, not depicted in FIG. 2.

(27) A protective sheath 6 can subsequently be produced. The protective sheath 6 is light-transmissive. Optionally, the protective sheath 6 can contain an optically effective material such as scattering particles and/or at least one phosphor. The semiconductor pillars 3 and also electrical lines, not depicted in FIG. 2, are sealed by way of the protective sheath 6. With the fitting of the protective sheath 6, the thread 10 arises, which forms the textile component 1.

(28) In a departure from the illustration in FIG. 2C, it is possible that the protective sheath 6 is applied to the core material 21 only in the region of the detachment matrix 92 and, accordingly, the core material 21 is then not completely sheathed.

(29) In the variant of the production method as elucidated in FIG. 3, the semiconductor pillars 3 are pressed directly into the core material 21 and then the protective sheath 6 or alternatively the cladding layer is produced.

(30) The exemplary embodiment in FIG. 4 illustrates that one of the electrical lines 4 is applied on the core material 21. The line 4 on the core material 21 is realized by a metal coating of the core material 21, for example. The semiconductor pillars 3, optionally in the detachment matrix 92, are situated on the line 4. Afterward an insulation layer 94 is present, followed by a further electrical line 4 and optionally the protective sheath 6. Various electrical interconnections of the semiconductor pillars 3 can be realized by way of such lines 4 in combination with an insulation layer 94 and the protective sheath 6. The same correspondingly applies in all the other exemplary embodiments.

(31) FIGS. 5 to 12 illustrate in each case that the threads 10 with the semiconductor pillars 3 together with woven threads 8 form a fabric, which is simultaneously the textile component 1. Various woven patterns can be used here.

(32) In accordance with FIG. 5, a distance between the semiconductor pillars 3 along the thread 10 is equal to a mesh periodicity M of the woven fabric composed of the woven threads 8, for example. The semiconductor pillars 3 can thus become located in each case on crossover points between the threads 10, 8.

(33) FIG. 6 shows that the thread 10 with the semiconductor pillars 3 is guided across the woven fabric 1 in a serpentine fashion. Longitudinal threads are predominantly formed by the woven threads 8. For the purpose of electrical contacting, at least one contact thread 7, for example a metal thread, can also be present. What is achievable by means of the contact thread 7 is that the lines 4 along the thread 10 with the semiconductor pillars 3 need have only a comparatively low electrical conductivity since it is not necessary for relatively large distances to be coped with by means of the lines 4 themselves. For this purpose, the contact thread 7 can have a comparatively high electrical conductivity.

(34) Various possible woven patterns, which can correspondingly be used in all the exemplary embodiments, may be found in figures to 12. The threads 10, 8 and optionally also the contact threads 7 can be interwoven in different patterns. The patterns differ for example in the number of longitudinal threads spanned by a transverse thread. The individual patterns can run vertically and horizontally or else along 45° diagonals. Thus, see FIG. 11, for instance, complex patterns and point arrangements of the semiconductor pillars 3 can be realized; see likewise FIG. 8.

(35) FIG. 12 especially illustrates that the threads 10 with the semiconductor pillars 3 can cross one another and run diagonally along two 45° directions, for example. It is possible, in contrast to the illustration in FIG. 12, for additional threads running vertically and/or horizontally to be present in the textile component 1.

(36) FIG. 13 illustrates schematically that the threads 10 with the semiconductor pillars 3 can be arranged on both sides of a contact thread 12 in order to form the textile component 1.

(37) For supplying the textile component 1 with energy it is possible for a secondary coil to be formed by way of the contact threads 7. An external primary coil 95 can generate, by means of wire 96, an alternating electric field that supplies enough current for operating the textile component 1, such that the semiconductor pillars 3 emit light. This is illustrated in FIG. 14.

(38) Alternatively, the threads 10 with the semiconductor pillars 3 can be connected to an energy source such as a battery.

(39) FIG. 15 schematically illustrates that the thread 10 is composed of a plurality of fibers 5. One of the fibers 5 has the semiconductor pillars 3. Corresponding fibers 5 can be produced analogously to FIGS. 1 to 3. In a departure from the illustration in FIG. 15, it is also possible for a plurality of the fibers 5 of the thread 10 to be provided with the semiconductor pillars 3.

(40) FIG. 16 schematically illustrates that a textile component 1 can be worn as a wristband on a wrist, for example, and that the semiconductor pillars 3 can form a display for displaying information.

(41) Corresponding textile components 1 which are self-luminous can also find application in the area of safety, for instance for safety clothing.

(42) Unless indicated otherwise, the components shown in the figures succeed one another directly preferably in the order specified. Layers not touching one another in the figures are preferably spaced apart from one another. Insofar as lines are drawn parallel to one another, the corresponding areas are preferably likewise oriented parallel to one another.

(43) Likewise, unless indicated otherwise, the relative positions of the depicted components with respect to one another are rendered correctly in the figures.

(44) The invention described here is not restricted by the description on the basis of the exemplary embodiments. Rather, the invention encompasses any novel feature and also any combination of features, which in particular includes any combination of features in the patent claims, even if this feature or this combination itself is not explicitly specified in the patent claims or exemplary embodiments.

(45) This patent application claims the priority of German patent application 10 2017 129 994.7, the disclosure content of which is hereby incorporated by reference.

LIST OF REFERENCE SIGNS

(46) 1 Textile component

(47) 10 Thread

(48) 21 Core material

(49) 22 Cladding layer

(50) 3 Semiconductor pillar

(51) 30 Growth substrate

(52) 31 Semiconductor core

(53) 32 Active zone

(54) 33 Semiconductor shell

(55) 34 Current distribution layer

(56) 35 Apex

(57) 36 Base point

(58) 37 Growth layer

(59) 38 Mask layer

(60) 4 Electrical line

(61) 43 Electrical connection

(62) 5 Fiber

(63) 6 Light-transmissive protective sheath

(64) 7 Contact thread

(65) 8 Woven thread

(66) 91 Intermediate carrier

(67) 92 Detachment matrix

(68) 93 Connection material

(69) 94 Insulation layer

(70) 95 Primary coil

(71) 96 Wire

(72) D Average diameter of the thread

(73) H Average height of the semiconductor pillars

(74) L Longitudinal direction of the thread

(75) M Mesh periodicity

(76) W Distance between the semiconductor pillars along the longitudinal direction