METHOD OF ENCAPSULATING A MICROELECTRONIC COMPONENT

Abstract

Method for encapsulation of a microelectronic component, including making of a portion of sacrificial material on a front face of a first substrate in which the component is intended to be made, then making of a cover encapsulating the portion of sacrificial material, then making of the component by etching the first substrate from its back face, such that part of the component is arranged to face the portion of sacrificial material and such that the portion of sacrificial material is accessible from a back face of the component, then elimination of the portion of sacrificial material by etching from the back face of the component, then securing of the back face of the component to a second substrate.

Claims

1. Method for encapsulation of at least one microelectronic component, comprising at least: making of at least one portion of sacrificial material on a front face of a first substrate in which the microelectronic component is intended to be made, then making of at least one cover encapsulating at least the portion of sacrificial material, then making of the microelectronic component by etching the first substrate from a back face of the first substrate, such that at least part of the microelectronic component is arranged to face the portion of sacrificial material and such that the portion of sacrificial material is accessible from a back face of the microelectronic component, then elimination of the portion of sacrificial material by etching from the back face of the microelectronic component, then securing of the back face of the microelectronic component to a second substrate.

2. Method according to claim 1, in which said part of the microelectronic component comprises at least one mobile element.

3. Method according to claim 1, in which the etching used to make the microelectronic component in the first substrate forms at least one trench passing through the entire thickness of the first substrate, delimits said part of the microelectronic component and forms an access to the portion of sacrificial material from the back face of the microelectronic component.

4. Method according to claim 1, in which the securing of the back face of the microelectronic component to the second substrate forms at least one electrical bond between at least one electrical interconnection element of the second substrate and at least one electrically conducting portion of the microelectronic component.

5. Method according to claim 4, in which the second substrate comprises at least one electronic circuit capable of reading at least one electrical signal outputted by the microelectronic component.

6. Method according to claim 1, in which the securing of the back face of the microelectronic component to the second substrate is made hermetically such that at least said part of the microelectronic component is hermetically enclosed in a cavity formed between the cover and the second substrate.

7. Method according to claim 1, also comprising, between the making of the cover and the making of the microelectronic component: making of a temporary handle secured to the cover; thinning of the first substrate such that a remaining thickness of the first substrate corresponds to a thickness of the microelectronic component; and in which the temporary handle is decoupled from the cover after the back face of the microelectronic component has been secured to the second substrate.

8. Method according to claim 7, also comprising, between the securing of the back face of the microelectronic component to the second substrate and the decoupling of the temporary handle, a thinning of the second substrate.

9. Method according to claim 7, in which the making of the temporary handle includes: deposition of a securing layer on the cover and parts of the front face of the first substrate not covered by the cover; planarization of the securing layer; bonding of a temporary substrate on the securing layer.

10. Method according to claim 1, also comprising a making of at least one protection layer on the front face of the first substrate before the making of the cover, and in which: at least part of the portion of sacrificial material is arranged in at least one opening made through the protection layer; the material of the protection layer is able to resist against the etching carried out during elimination of the portion of sacrificial material.

11. Method according to claim 9, also comprising a making of at least one protection layer on the front face of the first substrate before the making of the cover, and in which: at least part of the portion of sacrificial material is arranged in at least one opening made through the protection layer; the material of the protection layer is able to resist against the etching carried out during elimination of the portion of sacrificial material and to protect the securing layer during this etching.

12. Method according to claim 10, in which the protection layer is made on the front face of the first substrate before the making of the portion of sacrificial material and in which the making of the portion of sacrificial material comprises: deposition of at least a first layer of sacrificial material on the protection layer and in said at least one opening made through the protection layer; planarisation of the first layer of sacrificial material stopping on the protection layer, forming at least one remaining portion of the first layer of sacrificial material arranged in said at least one opening formed through the protection layer; deposition of at least one second layer of sacrificial material on said at least one remaining portion of the first layer of sacrificial material and on the protection layer; etching of the second layer of sacrificial material such that the remaining portions of the second layer of sacrificial material define at least one zone in which the cover is anchored to the first substrate and at least one stop for at least one mobile element of the microelectronic component, and such that at least one of the remaining portions of the second layer of sacrificial material at least partially covers said at least one remaining portion of the first layer of sacrificial material; and in which the portion of sacrificial material encapsulated by the cover corresponds to said at least one remaining portion of the first layer of sacrificial material and the remaining portions of the second layer of sacrificial material.

13. Method according to claim 1, in which the making of the cover comprises a deposition of an encapsulation layer with a thickness of less than about 10 m.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0043] This invention will be better understood after reading the description of example embodiments given purely for information and that are in no way limitative with reference to the appended drawings on which:

[0044] FIGS. 1 to 18 show the steps in a particular embodiment of a method for encapsulation of a microelectronic component according to one particular embodiment.

[0045] Identical, similar or equivalent parts of the different figures described below have the same numeric references to facilitate comparison between the different figures.

[0046] The different parts shown on the figures are not necessarily all at the same scale, to make the figures more easily understandable.

[0047] It must be understood that the different possibilities (variants and embodiments) are not mutually exclusive and that they can be combined with each other.

DETAILED PRESENTATION OF PARTICULAR EMBODIMENTS

[0048] Refer to FIGS. 1 to 18 that show the steps in a particular embodiment of a method for encapsulation of a microelectronic component 100.

[0049] The method begins using a first substrate 102, for example made of a semiconductor such as silicon, starting from which the microelectronic component 100 will be made (FIG. 1).

[0050] A protection layer 104 comprising a material resistant to at least one etching agent that will be used later to etch a sacrificial material that will be use to form the cavity in which the component 100 will be encapsulated, is deposited on a front face 106 of the first substrate 102. The front face 106 is plane, as is a back face 107 of the first substrate 102. For example, when the sacrificial material that will be used to form the cavity is SiO.sub.2 that will be chemically etched using a hydrofluoric acid solution, the protective layer 104 may be an Si.sub.3N.sub.4 layer. The thickness of the protection layer 104 may for example be between about 0.2 m and 1 m. Parts of the protection layer 104 are then etched (FIG. 2), forming one or several openings 105 in which the sacrificial material will be arranged and that will form part of the cavity in which the component 100 will be encapsulated.

[0051] A first layer of sacrificial material 108 is then deposited on the protection layer 104 in a conforming manner, and on the parts of the front face 106 of the first substrate 102 not covered by the protection layer 104, in other words in the openings 105 (FIG. 3). The thickness of this first layer of sacrificial material 108 is greater than or equal to the thickness of the protection layer 104 so that the openings 105 are filled by the sacrificial material of the first layer 108. The sacrificial layer of this first layer 108 is chosen as a function of the etching agent that will be used later to form the cavity in which the component 100 will be encapsulated. The material in the first layer 108 may for example be SiO.sub.2 that will be etched by a solution of hydrofluoric acid, or a polymer that will be eliminated by O.sub.2 plasma etching. In general, the sacrificial material of the first layer 108 may be a dielectric material, a polymer or a metal.

[0052] As shown on FIG. 4, a planarisation step is carried out to eliminate parts of the first layer of sacrificial material 108 that are not deposited in the openings 105 and that cover the protection layer 104. This planarisation can be stopped when the upper face of the protection layer 104 is reached. Therefore only the remaining portions 110 of sacrificial material filling the openings 105 are kept, these remaining portions 110 forming, with the protection layer 104, a plane layer covering the top face 106 of the first substrate 102. Therefore the thickness of the remaining portions 110 is equal to the thickness of the protection layer 104.

[0053] As a variant, instead of making these remaining portions 110 by a deposit as described above with reference to FIG. 3, these portions 110 can be obtained by the use of thermal oxidation of the semiconductor of the substrate 102 through the openings 105.

[0054] A second layer of sacrificial material 112, for example comprising the same sacrificial material as portions 110, is then made for example by deposition over the entire front face of the previously made structure, in other words on the remaining portions 110 and on the protection layer 104 (FIG. 5). The thickness of this second layer 112 is chosen such that the sum of the thicknesses of the second layer 112 and portions 110 is approximately equal to the height of the required empty space above the component 100 when it will be encapsulated. The thickness of the second layer of sacrificial material 112 may for example be between about 0.5 m and 3 m.

[0055] On FIG. 6, the second layer 112 is then etched so that the remaining portions 114 of this second layer 112 define one or several future zones anchoring the cover to the first substrate 102 (through the protection layer 104) and one or several stops for one or several mobile elements of the component 100, adjacent to the portions of the second layer. Furthermore, the remaining portions 114 of the second layer of sacrificial material 112 at least partly cover the remaining portions 110 of the first layer of sacrificial material 108 so that the etching agent that will be used afterwards can reach the remaining portions 114 from the back face of the component 100.

[0056] The cover 116 is then made by depositing an encapsulation layer particularly covering the remaining portions 114 and filling in the openings formed between the portions 114 (FIG. 7). The parts of the encapsulation layer deposited in the openings formed between the portions 114 form the anchor zones and the stop(s). The encapsulation layer may be etched so as to delimit the cover 116 in the principal plane of the first substrate 102 (plane parallel to faces 106, 107 of the first substrate 102). The material of the cover 116 is chosen to resist the etching agent that will be used to etch the remaining portions 110 and 114. For example, if this etching agent is a solution of hydrofluoric acid and the sacrificial material is SiO.sub.2, the cover 116 may include polycrystalline silicon. When the sacrificial material is a polymer that will be etched by an organic compound or by an O.sub.2 plasma, the cover 116 may contain SiO.sub.2. The material chosen for the cover 116 must be such that etching of the sacrificial material applied later is sufficiently selective relative to the material of the cover 116, otherwise it will be etched completely when the sacrificial material is etched. The thickness of the deposited encapsulation layer is advantageously between about 0.5 m and 10 m.

[0057] A temporary handle is then made on the cover 116. As shown on FIG. 8, this is done by depositing a securing layer 118 to which a temporary substrate will be secured, on the previously made structure thus covering the cover 116 and the remaining portions 114 not covered by the cover 116. The material of the securing layer 118 is chosen so that it can be etched selectively relative to the material of the cover 116. For example, when the cover 116 is made of silicon, the material of the securing layer 118 may be SiO.sub.2, Si.sub.3N.sub.4, or even PSG or BPSG glass. Thus, this securing layer 118 advantageously comprises a material similar to the material in the remaining portions 114, in other words in this case SiO.sub.2. The thickness of this securing layer 118 is at least equal to the topology formed by the cover 116. For example, considering that the maximum variation of the height at the surface of the substrate 102 is h, the thickness of the securing layer 118 is advantageously chosen to be equal to about 1.5.h. In general, the thickness of the securing layer 118 is between about 1 m and 5 m.

[0058] The securing layer 118 is then planarized by the use of chemical mechanical polishing (CMP) such that the top face 120 of the securing layer 118 (face opposite the face covering the cover 116) is plane and can be secured to the future temporary handle (FIG. 9).

[0059] As shown on FIG. 10, a temporary substrate 122, in this case corresponding to a semiconductor substrate such as silicon, is secured to the top face 120 of the securing layer 118. This securing of the temporary substrate 122 on the top face 120 of the securing layer 118 may be made by direct bonding (if the materials of the temporary substrate 122 and of the securing layer 118 are compatible with the use of such bonding, or by using an adhesive layer arranged between the temporary substrate 122 and the securing layer 118.

[0060] The temporary handle thus formed by the temporary substrate 122 and the securing layer 118 is then used to mechanically retain the structure made by thinning the first substrate 102 from its back face 107, as shown on FIG. 11. For example, this thinning corresponds to the use of CMP. The remaining part of the first substrate 102 will be used to make the component 100. For example, the initial thickness of the first substrate 102 is equal to about 725 m (standard thickness of a silicon substrate with a diameter equal to 200 m), and the final thickness of the first substrate 102 after thinning may advantageously be equal to a few tens of microns, particularly less than 100 m. The remaining thickness of the first substrate 102 is chosen such that it corresponds to the required final thickness of the microelectronic component 100. This thinning is not done when the first substrate 102 initially has the required thickness for the component 100.

[0061] On FIG. 12, a layer of electrically conducting material, for example a metallic layer, is then deposited on the back face 107 of the first substrate 102, and is then etched such that the remaining portions of this layer form electrically conducting portions 124. For example, the electrically conducting material of the portions 124 is aluminium, this material being adapted so that AlGe eutectic bonding can then be made between these electrically conduction portions 124 and electrical interconnection elements to which the portions 124 are connected. The first substrate 102 is then etched, for example by a deep anisotropic etching of the DRIE type, from its back face 107 stopping on the protection layer 104 and on the remaining portions 110, thus forming the different parts of the microelectronic component 100 (FIG. 13). In particular, this etching forms trenches 125 passing through the entire thickness of the first substrate 102 and delimiting the fixed and mobile elements of the component 100. The component 100 is made such that at least one mobile element of the component 100 is arranged facing the remaining portions 110. The trenches 125 also form accesses from a back face 127 of the component 100 to the remaining portions 110, 114 of sacrificial material that are covered by the cover 116.

[0062] On FIG. 14, the remaining portions 110, 114 of sacrificial material are etched using the trenches 125 from the back face 127 of the component 100, forming the cavity 126 and also releasing the mobile parts of the component 100 (for example the seismic mass(es) in the case of a component 100 corresponding to an accelerometer).

[0063] Other parts of the component 100 remain secured to the protection layer 104 and/or the cover 116. This etching may be done using a liquid or vapour hydrofluoric acid solution when the sacrificial material of the remaining portions 110, 114 is SiO.sub.2. When the sacrificial material of the remaining portions 110, 114 is a polymer, O.sub.2 plasma type etching may be used. When etching the sacrificial material of the remaining portions 110, 114, the protection layer 104 protects some of the remaining portions 114 located outside the cavity 126 and the securing layer 118 from the etching agent used to eliminate the sacrificial material encapsulated by the cover 116.

[0064] A second substrate 128 is secured to the back face 127 of the component 100 through the electrically conducting portions 124 located on the back face 127 of the component 100. The second substrate 128 is advantageously an interconnections substrate for routing different electrical parts of the component 100 to contact pads 129. This second substrate 128 may also correspond to an electronic circuit capable of reading the electrical signal(s) outputted by the component 100, for example of the ASIC type. In this case, this bonding is done hermetically so that the component 100 will be encapsulated hermetically, for example in an atmosphere under a vacuum or in a neutral gas environment between the cover 116 and the second substrate 128. Some of the electrically conduction portions 124 to which the second substrate 128 is secured (references 124a on FIG. 15) form a sealed or hermetic bonding bead closing or hermetically sealing the cavity 126. Other electrically conducting portions 124, referenced 124b on FIG. 15, are secured to electrical interconnection elements 131 of the second substrate 128 and form electrical connections between the component 100 and the electronic circuit of the second substrate 128. For example, the securing between the component 100 and the second substrate 128 is achieved by the use of eutectic bonding, for example of the AuSi type, or by thermocompression bonding. After this securing, the substrate 128 may be thinned from its back face 130, for example by CMP.

[0065] The temporary handle is then decoupled from the remaining elements firstly by removing the temporary substrate 122 (FIG. 16), and then etching the securing layer 118 (FIG. 17). The remaining portions 114 not covered by the cover 116 are also eliminated, for example by etching. As a variant, the temporary substrate 122 may be decoupled directly as a result of etching the securing layer 118.

[0066] Finally, as shown on FIG. 18, the method is completed by etching the portions of the protection layer 104 that project laterally from the component 100.