Device for treating surfaces of wafer-shaped articles and gripping pin for use in the device
09633890 ยท 2017-04-25
Assignee
Inventors
- Ulrich Tschinderle (Feistriz/Gail, AT)
- Andreas Gleissner (Radenthein, AT)
- Thomas WIRNSBERGER (Seeboden, AT)
- Franz Kumnig (Lieserbrucke, AT)
- Rainer Obweger (Lind im Drautel, AT)
Cpc classification
H01L21/68728
ELECTRICITY
Y10T279/17213
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
H01L21/68785
ELECTRICITY
International classification
B23B31/18
PERFORMING OPERATIONS; TRANSPORTING
H01L21/67
ELECTRICITY
Abstract
A device for processing wafer-shaped articles comprises a rotary chuck having a series of pins adapted to hold a wafer shaped article on the rotary chuck. Each of the pins comprises a cylindrical body and a projecting gripping portion formed integrally therewith. The cylindrical body and gripping portion are made from a ceramic material. The gripping portion comprises cylindrical surfaces having a common generatrix with surfaces of the cylindrical body.
Claims
1. A device for processing a wafer, the device comprising: a rotary chuck; and a series of pins disposed on the rotary chuck and adapted to hold the wafer on the rotary chuck, wherein each of the pins comprises a body that is cylindrically-shaped, and a gripping portion formed integrally with the body and formed of a ceramic material, the gripping portion comprises a groove, a first section and a second section, the groove is configured to receive an edge of the wafer, the first section is at a distal most end of the pin and includes a first portion of the groove, the second section is at a distal most end of the body and includes a second portion of the groove, the gripping portion comprises a first surface having a common generatrix with a second surface of the body, the second surface is cylindrically-shaped, the groove comprises a first sloped region extending from a radially innermost portion of the groove to the second surface of the body, and each of the pins further includes a second sloped region distinct from the first sloped region and extending from the second surface of the body to the first section of the gripping portion and the first sloped region.
2. The device according to claim 1, further comprising: a plurality of gears, wherein each of the pins comprises a base portion rigidly mounted in one of the plurality of gears via a respective fastener; and a ring gear in meshing engagement with each of the plurality of gears to drive the pins in unison, wherein the ring gear rotates the plurality of gears and as a result the pins between corresponding angular positions.
3. The device according to claim 2, wherein each of said the plurality of gears is formed of metal or a thermally resistant and chemically inert plastic material.
4. The device according to claim 1, wherein the ceramic material includes at least one of Al.sub.2O.sub.3, Y.sub.2O.sub.3, SiC, Si.sub.3N.sub.4, AlN, cordierite (2MgO.Math.2Al.sub.2O.sub.3.Math.5SiO.sub.2) zirconia (ZrO.sub.2), or quartz (SiO.sub.2).
5. The device according to claim 1, wherein the pins are configured to rotate about respective central axes of the bodies of the pins.
6. The device according to claim 1, wherein the first surfaces of the gripping portions extend over 45 to 270 of respective circumferences of the bodies of the pins.
7. The device according to claim 1, wherein: the grooves extend radially inward from a respective one of the second surfaces of the bodies; and each of the grooves are dimensioned to receive and engage the edge of the wafer, where the edge of the wafer has a thickness of 500 to 1,000 microns.
8. The device according to claim 1, wherein: the gripping portions, in an end view of the pins, do not extend over more than two thirds of respective distal ends of the bodies of the pins; and the rotary chuck is configured to facilitate release of the wafer from the gripping portions as the first surfaces of the gripping portions are moved radially outward of an axis of rotation of the rotary chuck by rotation of the bodies of the pins about respective axes of the pins.
9. The device according to claim 1, wherein the rotary chuck is adapted to be driven via a magnetic bearing and without mechanical actuation and contact with the rotary chuck.
10. The device according to claim 1, wherein: the first surfaces of the gripping portions adjoin respective radially inwardly extending surfaces of the grooves; the radially inward extending surfaces of the grooves adjoin radially innermost surfaces of the grooves; the edge of the wafer comprises a radially outward facing surface; and the innermost surfaces of the grooves are adapted to engage only the radially outward facing surface of the wafer.
11. The device according to claim 1, wherein each of the gripping portions has no plane of symmetry that is parallel to a central axis of a corresponding one of the bodies of the pins.
12. The device according to claim 1, wherein widths of the grooves decrease circumferentially from first ends of the grooves to second ends of the grooves.
13. The device according to claim 12, wherein: each of the pins are configured to be rotated between a first position and a second position; while in the first position, the grooves receive or release the wafer at the first end of the groove; while in the second position, the grooves grip the wafer via the second end of the groove; and the pins are rotated between the first positions and the second positions to release and grip the wafer.
14. A system comprising: the device of claim 1; and a closed process chamber containing the rotary chuck.
15. A gripping pin for use in a device that processes a wafer, the gripping pin comprising: a body, wherein the body is cylindrically-shaped; a gripping portion formed integrally with the body, wherein the gripping portion is formed of a ceramic material, the gripping portion comprises a first cylindrically-shaped surface having a common generatrix with a second cylindrically-shaped surface of the body, the gripping portion comprises a groove, a width of the groove decreases circumferentially from a first end of the groove to a second end of the groove, the pin is configured to be rotated between a first position and a second position, while in the first position, the groove receives or releases the wafer at the first end of the groove, while in the second position, the groove grips the wafer via the second end of the groove, and the pin is rotated between the first position and the second position to release and grip the wafer; and a first sloped region extending between the body and the gripping portion.
16. The gripping pin according to claim 15, further comprising a gear and a fastener, wherein: the gear is attached to a base portion of the gripping pin via the fastener; and the gear is formed of metal or a thermally resistant and chemically inert plastic material.
17. The gripping pin according to claim 15, wherein the gripping portion, in an end view of the gripping pin, does not extend radially outward of the body and does not extend over more than two thirds of a distal end of the body.
18. The gripping pin of claim 15, wherein: the groove comprises a second sloped region; the second sloped region extends from the body to a radially innermost surface of the groove; and the first sloped region is distinct from the second sloped region and extends from the body to the second sloped region.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1) Other objects, features and advantages of the invention will become more apparent after reading the following detailed description of preferred embodiments of the invention, given with reference to the accompanying drawings, in which:
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DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS
(18) Referring now to
(19) A rotary chuck 30 is disposed in the upper part of chamber 1, and surrounded by the cylindrical wall 34. Rotary chuck 30 rotatably supports a wafer W during used of the apparatus. The rotary chuck 30 incorporates a rotary drive comprising ring gear 38, which engages and drives a plurality of eccentrically movable gripping members 60 for selectively contacting and releasing the peripheral edge of a wafer W, as will be described in detail below.
(20) In this embodiment, the rotary chuck 30 is a ring rotor provided adjacent to the interior surface of the cylindrical wall 34. A stator 32 is provided opposite the ring rotor adjacent the outer surface of the cylindrical wall 34. The rotor 30 and stator 32 serve as a motor by which the ring rotor 30 (and thereby a supported wafer W) may be rotated through an active magnetic bearing. For example, the stator 34 can comprise a plurality of electromagnetic coils or windings that may be actively controlled to rotatably drive the rotary chuck 30 through corresponding permanent magnets provided on the rotor. Axial and radial bearing of the rotary chuck 30 may be accomplished also by active control of the stator or by permanent magnets. Thus, the rotary chuck 30 may be levitated and rotatably driven free from mechanical contact. Alternatively, the rotor may be held by a passive bearing where the magnets of the rotor are held by corresponding high-temperature-superconducting magnets (HTS-magnets) that are circumferentially arranged on an outer rotor outside the chamber. With this alternative embodiment each magnet of the ring rotor is pinned to its corresponding HTS-magnet of the outer rotor. Therefore the inner rotor makes the same movement as the outer rotor without being physically connected.
(21) The lid 36 has a manifold 42 mounted on its exterior, which supplies a medium inlet 44 that traverses the lid 36 and opens into the chamber above the wafer W. It will be noted that the wafer W in this embodiment hangs downwardly from the rotary chuck 30, supported by the gripping members 60, such that fluids supplied through inlet 44 would impinge upon the upwardly facing surface of the wafer W.
(22) In case wafer 30 is a semiconductor wafer, for example of 300 mm or 450 mm diameter, the upwardly facing side of wafer W could be either the device side or the obverse side of the wafer W, which is determined by how the wafer is positioned on the rotary chuck 30, which in turn is dictated by the particular process being performed within the chamber 1.
(23) The apparatus of
(24) Hollow shaft 22 is surrounded by a boss 12 formed in the main chamber 1, and these elements are connected via a dynamic seal that permits the hollow shaft 22 to be displaced relative to the boss 12 while maintaining a gas-tight seal with the chamber 1.
(25) At the top of cylindrical wall 21 there is attached an annular deflector member 24, which carries on its upwardly-facing surface a gasket 26. Cover 2 preferably comprises a fluid medium inlet 28 traversing the base 20, so that process fluids and rinsing liquid may be introduced into the chamber onto the downwardly facing surface of wafer W.
(26) Cover 2 furthermore includes a process liquid discharge opening 23, which opens into a discharge pipe 25. Whereas pipe 25 is rigidly mounted to base 20 of cover 2, it traverses the bottom wall 14 of chamber 1 via a dynamic seal 17 so that the pipe may slide axially relative to the bottom wall 14 while maintaining a gas-tight seal.
(27) An exhaust opening 16 traverses the wall 10 of chamber 1, whereas a separate exhaust opening 46 traverses the lid 36 near the inner surface of rotary chuck 30. Each exhaust opening is connected to suitable exhaust conduits (not shown), which are preferably independently controlled via respective valves and venting devices.
(28) The position depicted in
(29) In
(30) When the interior cover 2 reaches its second position as depicted in
(31) During processing of a wafer, processing fluids may be directed through medium inlets 44 and/or 28 to a rotating wafer W in order to perform various processes, such as etching, cleaning, rinsing, and any other desired surface treatment of the wafer undergoing processing.
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(33) In particular, wafer W is loaded onto spin chuck 50 when interior cover 2 is in the loading/unloading position depicted in
(34) As the spin chuck 50 of this embodiment is not vertically moveable relative to the interior cover 2, the movement of the interior cover 2 serves simultaneously to position wafer W at its final processing position within the chamber 48. Spin chuck 50 is then rotated by a motor (not shown) acting upon shaft 55.
(35) Referring now to
(36) The gripping portion 62 is formed by grinding a cylindrical blank of ceramic material, such as Al.sub.2O.sub.3, Y.sub.2O.sub.3, SiC, Si.sub.2N.sub.4, AlN, cordierite (2MgO.2 Al.sub.2O.sub.2.5SiO.sub.2) zirconia (ZrO.sub.2), quartz (SiO.sub.2) and combinations thereof. In particular, material is ground away from one end of the cylindrical blank to form the sloped region 65 depicted in
(37) Thus, a significant surface area of the gripping portion 62 is original to the cylindrical blank, with these original surfaces 66 thus having a common generatrix as the cylindrical surfaces of the body 61. As a result, gripping portion 62 has far greater mechanical strength than in none of its surfaces shared a common generatrix with the underlying body portion 61, as is the case for conventional gripping pins.
(38) At the base of the gripping pin 60 there is a gear element 63, which is preferably a separately-formed element made from a metal or a thermally-resistant and chemically inert plastic material such as polyetheretherketone (PEEK). Gear element 63 is secured to pin 60 via a screw 67. Forming the gear element 63 separately from metal or plastic is advantageous in that the gear teeth can be formed more readily in such materials, as compared to a ceramic material in which it is very difficult to form gear teeth.
(39) Screw 67 is preferably threaded into a bore in the gear element 63, but there need not be threading provided in the corresponding bore 69 in the ceramic pin 60, as the screw 67 serves mainly to prevent axial movement of the pin 60 relative to the gear element 63. Indeed, screw 67 may also be replaced by a smooth pin where the chuck structure surrounding the gear element would prevent outward displacement of such a smooth pin.
(40) In
(41) The position of screw 67 in
(42) This is also the position illustrated in
(43) Alternatively, the circular series of pins 60 could surround the ring gear, in which case the ring gear would be designed with an outer ring of gear teeth in simultaneous meshing engagement with the gear elements 63 of each of the circular series of pins 60. In that case, the screw would be positioned on the side of the gear element 63 opposite that shown in
(44) The plan view of
(45) Further structural details of the pin 60 of the present embodiment are revealed by the axial sections of
(46) Operation of the pin 60 depicted in
(47) Typically the number of pins 60 is six, although depending upon the application that number could be as few as three and as many as twelve or more. The pins 60 are preferably regularly spaced outside the periphery of the article to be processed, thus in the case of six pins 60 they would be spaced apart by 60.
(48) When the article to be processed is a semiconductor wafer, such wafers are of standard diameters and thicknesses. Thus, for a 300 mm diameter wafer, the pins 60 are positioned and dimensioned such that body portion 61 overlaps the wafer diameter (and so too the surfaces 66 when the pins are closed), whereas the groove 64 is dimensioned such that the base (radially innermost part) of the groove will always lie just outside the wafer diameter. The same of course applies for wafers of other diameters, such as 200 mm and 450 mm.
(49) The groove 64 of this embodiment has a width (or axial extent) designed to securely hold a wafer-shaped article when pins 60 are closed. Such a width would be just greater than the wafer thickness, which will typically be in a range from 500 micron to 1000 micron.
(50) Once a wafer W is correctly positioned on the chuck 30 or 50, the pins 60 are conjointly turned by ring gear 38 a quarter turn, from the position shown in
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(52) Instead, wafer W is forced against surface 73 of groove 64 solely by the force of a gas flow applied against the proximal wafer surface, and may be retracted from contact with surface 73 by a suitable decrease in the gas flow. The bottom (or radially innermost) surface 75 of groove 64 thus corresponds to the range of axial travel permitted to a wafer W in this embodiment.