ELECTRICAL STORAGE SYSTEM INCLUDING A SHEET-LIKE DISCRETE ELEMENT, SHEET-LIKE DISCRETE ELEMENT, METHOD FOR PRODUCING SAME, AND USE THEREOF

Abstract

An electrical storage element is provided that includes a discrete sheet-like element with particularly low transparency to high-energy electrical radiation, preferably in a range of wavelengths from 200 to 400 nm, and to the manufacturing thereof, and also relates to a discrete sheet-like element that exhibits particularly low transparency for high-energy electromagnetic radiation, preferably in a range of wavelengths from 200 to 400 nm, and to the manufacturing thereof.

Claims

1. An electrical storage system, comprising: a sheet-like discrete element, wherein the sheet-like discrete element has a transmittance selected from the group consisting of: 20% or less in a range from 200 nm to 270 nm at a thickness of 30 m, 2.0% or less at 222 nm at a thickness of 30 m, 1.0% or less at 248 nm at a thickness of 30 m, 50% or less at 282 nm at a thickness of 30 m, 85% or less at 308 nm at a thickness of 30 m, 92% or less at 351 nm at a thickness of 30 m, 3% or less in a range from 200 nm to 270 nm at a thickness of 100 m, 3.0% or less at 222 nm at a thickness of 100 m, 3.0% or less at 248 nm at a thickness of 100 m, 20% or less at 282 nm at a thickness of 100 m, 75% or less at 308 nm at a thickness of 100 m, and 92% or less at 351 nm at a thickness of 100 m, wherein the sheet-like discrete element has a total thickness variation of not more than 25 m based on wafer or substrate sizes in a range of >100 mm in diameter, and wherein the sheet-like discrete element comprises a composition range, in wt %, of: TABLE-US-00009 Component Range SiO.sub.2 30-85 Al.sub.2O.sub.3 0-15 B.sub.2O.sub.3 3-20 Na.sub.2O 3-15 K.sub.2O 3-15 CaO 0-0.1 ZnO 0-12 TiO.sub.2 0.5-10.

2. The electrical storage system as claimed in claim 1, wherein the transmittance is selected from the group consisting of 15% or less in the range from 200 nm to 270 nm at a thickness of 30 m, 10% or less at 282 nm at a thickness of 30 m, and 80% or less at 308 nm a thickness of 30 m.

3. The electrical storage system as claimed in claim 1, wherein the sheet-like discrete element exhibits a water vapor transmission rate (WVTR) of <10.sup.3 g/(m.sup.2.Math.d).

4. The electrical storage system as claimed in claim 1, wherein the sheet-like discrete element has a thickness of less than 2 mm.

5. The electrical storage system as claimed in claim 1, wherein the sheet-like discrete element has a thickness of less than or equal to 100 m.

6. The electrical storage system as claimed in claim 1, wherein the sheet-like discrete element has a specific electrical resistance at a temperature of 350 C. and at alternating current with a frequency of 50 Hz of greater than 1.0*10.sup.6 Ohm.Math.cm.

7. The electrical storage system as claimed in claim 1, wherein the sheet-like discrete element exhibits a maximum load temperature .sub.Max of at least 300 C.

8. The electrical storage system as claimed in claim 1, wherein the sheet-like discrete element has a coefficient of linear thermal expansion in a range from 2.0*10.sup.6/K to 10*10.sup.6/K.

9. The electrical storage system as claimed in claim 1, wherein the sheet-like discrete element has a maximum load temperature .sub.Max of at least 300 C., a coefficient of linear thermal expansion in a range from 2.0*10.sup.6/K to 10*10.sup.6/K, and a product of the maximum load temperature and the coefficient of linear thermal expansion of 600.Math.10.sup.6.sub.Max.Math.8000.Math.10.sup.6.

10. The electrical storage system as claimed in claim 1, wherein the sheet-like discrete element is a glass.

11. The electrical storage system as claimed in claim 10, wherein the sheet-like discrete element is a drawn glass

12. A sheet-like discrete element for use in an electrical storage system, comprising: a transmittance selected from the group consisting of: 20% or less in a range from 200 nm to 270 nm at a thickness of 30 m, 2.0% or less at 222 nm at a thickness of 30 m, 1.0% or less at 248 nm at a thickness of 30 m, 50% or less at 282 nm at a thickness of 30 m, 85% or less at 308 nm at a thickness of 30 m, 92% or less at 351 nm at a thickness of 30 m, 3% or less in a range from 200 nm to 270 nm at a thickness of 100 m, 3.0% or less at 222 nm at a thickness of 100 m, 3.0% or less at 248 nm at a thickness of 100 m, 20% or less at 282 nm at a thickness of 100 m, 75% or less at 308 nm at a thickness of 100 m, and 92% or less at 351 nm at a thickness of 100 m; a total thickness variation of not more than 25 m based on wafer or substrate sizes in a range of >100 mm in diameter; and a composition range, in wt %, of: TABLE-US-00010 Component Range SiO.sub.2 30-85 Al.sub.2O.sub.3 0-15 B.sub.2O.sub.3 3-20 Na.sub.2O 3-15 K.sub.2O 3-15 CaO 0-0.1 ZnO 0-12 TiO.sub.2 0.5-10.

13. The sheet-like discrete element as claimed in claim 12, wherein the transmittance is selected from the group consisting of 15% or less in the range from 200 nm to 270 nm at a thickness of 30 m, 10% or less at 282 nm at a thickness of 30 m, and 80% or less at 308 nm a thickness of 30 m.

14. The sheet-like discrete element as claimed in claim 12, further comprising a water vapor transmission rate (WVTR) of <10.sup.3 g/(m.sup.2.Math.d).

15. The sheet-like discrete element as claimed in claim 12, further comprising a thickness of less than 2 mm.

16. The sheet-like discrete element as claimed in claim 12, further comprising a thickness of not more than 100 m.

17. The sheet-like discrete element as claimed in claim 12, further comprising a specific electrical resistance at a temperature of 350 C. and at alternating current with a frequency of 50 Hz of greater than 1.0*10.sup.6 Ohm.Math.cm.

18. The sheet-like discrete element as claimed in claim 12, further comprising a maximum load temperature .sub.Max of at least 300 C.

19. The sheet-like discrete element as claimed in claim 12, further comprising a coefficient of linear thermal expansion in a range from 2.0*10.sup.6/K to 10*10.sup.6/K.

20. The sheet-like discrete element as claimed in claim 12, further comprising a maximum load temperature .sub.Max of at least 300 C., a coefficient of linear thermal expansion in a range from 2.0*10.sup.6/K to 10*10.sup.6/K, and a product of the maximum load temperature and the coefficient of linear thermal expansion of 600.Math.10.sup.6.sub.Max.Math.8000.Math.10.sup.6.

21. The sheet-like discrete element as claimed in claim 12, wherein the element is made of glass.

22. The sheet-like discrete element as claimed in claim 21, wherein the glass comprises drawn glass.

23. A method for producing a thin film storage element, comprising: providing a sheet-like discrete element; depositing a functional layer on the sheet-like discrete element; and processing the functional layer by focusing UV light onto the sheet-like discrete element which thereby absorbs the UV radiation and converts the UV radiation into heat energy, the heat energy thermally post-treating the functional layer.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0064] FIG. 1 schematically shows an electrical storage system according to the present invention;

[0065] FIG. 2 schematically illustrates a sheet-like discrete element according to the present invention;

[0066] FIG. 3 shows transmittance data for a sheet-like discrete element of the invention with three different thicknesses; and

[0067] FIG. 4 shows transmittance data for a sheet-like discrete element of the invention with two different thicknesses.

DETAILED DESCRIPTION

[0068] FIG. 1 schematically shows an electrical storage system 1 according to the present invention. It comprises a sheet-like discrete element 2 which is used as a substrate. A sequence of different layers is applied on the substrate. By way of example and without being limited to the present example, first the two collector layers are applied on the sheet-like discrete element 2, cathode collector layer 3, and anode collector layer 4. Such collector layers usually have a thickness of a few micrometers and are made of a metal, for example of copper, aluminum, or titanium. Superimposed on collector layer 3 is cathode layer 5. If the electrical storage system 1 is a lithium-based thin film battery, the cathode is made of a lithium/transition metal compound, preferably an oxide, for example of LiCoO.sub.2, of LiMnO.sub.2, or else of LiFePO.sub.4. Furthermore, the electrolyte 6 is applied on the substrate and is at least partially overlapping cathode layer 5. In the case of a lithium-based thin film battery, this electrolyte is mostly LiPON, a compound of lithium with oxygen, phosphorus, and nitrogen. Furthermore, the electrical storage system 1 comprises an anode 7 which may for instance be made of lithium titanium oxide or else of metallic lithium. Anode layer 7 is at least partially overlapping electrolyte layer 6 and collector layer 4. Furthermore, the electrical storage system 1 comprises an encapsulation layer 8.

[0069] In the context of the present invention, any material which prevents or greatly reduces the attack of fluids or other corrosive materials on the electrical storage system 1 is considered as an encapsulation or sealing of the electrical storage system 1.

[0070] FIG. 2 schematically illustrates a sheet-like discrete element according to the present invention, here in the form of a sheet-like shaped body 10. In the context of the present invention, a shaped body is referred to as being sheet-like or a sheet if its dimension in one spatial direction is not more than half of that in the two other spatial directions. A shaped body is referred to as a ribbon in the present invention if it has a length, width, and thickness for which the following relationship applies: the length is at least ten times larger than the width which in turn is at least twice as large as the thickness.

[0071] FIG. 3 shows transmittance data for a sheet-like discrete element of the invention according to the composition of exemplary embodiment 2, with three different thicknesses. At rather large wavelengths, clearly perceptible interference effects occur, which are caused by measurement technology and thus do not represent a characteristic of the discrete sheet-like element.

[0072] FIG. 4 shows transmittance data for a sheet-like discrete element of the invention according to the composition of exemplary embodiment 4, with two different thicknesses. At rather large wavelengths, clearly perceptible interference effects occur, which are caused by measurement technology and thus do not represent a characteristic of the discrete sheet-like element.

[0073] Thus, as part of the present disclosure an electrical storage system is furthermore described, which comprises at least one sheet-like discrete element which in particular in case of a thickness of 30 m has a transmittance in a range from 200 nm to 270 nm of 20% or less transmittance, and/or of 2.0% or less in particular preferably at 222 nm, of 1.0% or less in particular preferably at 248 nm, of 50% or less in particular preferably at 282 nm, of 85% or less in particular preferably at 308 nm, and of 92% or less in particular preferably at 351 nm, and in particular in case of a thickness of 100 m has a transmittance in the range from 200 nm to 270 nm of 3% or less, and/or of 3.0% or less in particular preferably at 222 nm, of 3.0% or less in particular preferably at 248 nm, of 20% or less in particular preferably at 282 nm, of 75% or less in particular preferably at 308 nm, and of 92% or less in particular preferably at 351 nm.

[0074] Also disclosed is an electrical storage system that comprises at least one sheet-like discrete element which in particular in case of a thickness of 30 m has a transmittance in the range from 200 nm to 270 nm of 15% or less, and/or of 2.0% or less in particular preferably at 222 nm, of 1.0% or less in particular preferably at 248 nm, of 10% or less in particular preferably at 282 nm, of 80% or less in particular preferably at 308 nm, and of 92% or less in particular preferably at 351 nm.

[0075] Also disclosed is an electrical storage system that comprises at least one sheet-like discrete element, wherein the at least one sheet-like discrete element exhibits a total thickness variation of not more than 25 m, preferably of not more than 15 m, more preferably of not more than 10 m, and most preferably of not more than 5 m, based on wafer or substrate sizes in a range of >100 mm in diameter, in particular with a lateral dimension of 100 mm100 mm, preferably based on wafer or substrate sizes in a range of >200 mm in diameter, in particular with a lateral dimension of 200 mm200 mm, and more preferably based on wafer or substrate sizes in a range of >400 mm in diameter, in particular with a lateral dimension of 400 mm400 mm.

[0076] Also disclosed is an electrical storage system that comprises at least one sheet-like discrete element, wherein the at least one sheet-like discrete element exhibits a water vapor transmission rate (WVTR) of <10.sup.3 g/(m.sup.2.Math.d), preferably of <10.sup.6 g/(m.sup.2.Math.d), and more preferably of <10.sup.6 g/(m.sup.2.Math.d).

[0077] Also disclosed is an electrical storage system in which the sheet-like discrete element has a thickness of less than 2 mm, preferably less than 1 mm, more preferably less than 500 m, yet more preferably of less than or equal to 200 m, and most preferably of less than or equal to 100 m.

[0078] Also disclosed is an electrical storage system that comprises at least one sheet-like discrete element, wherein the at least one sheet-like discrete element has a specific electrical resistance at a temperature of 350 C. and at alternating current with a frequency of 50 Hz of greater than 1.0*10.sup.6 Ohm.Math.cm.

[0079] Also disclosed is an electrical storage system that comprises at least one sheet-like discrete element, wherein the at least one sheet-like discrete element exhibits a maximum load temperature .sub.Max of at least 300 C., preferably at least 400 C., most preferably at least 500 C.

[0080] Also disclosed is an electrical storage system that comprises at least one sheet-like discrete element, wherein the at least one sheet-like discrete element has a coefficient of linear thermal expansion in a range from 2.0*10.sup.6/K to 10*10.sup.6/K, preferably from 2.5*10.sup.6/K to 9.5*10.sup.6/K, and most preferably from 3.0*10.sup.6/K to 9.5*10.sup.6/K.

[0081] Also disclosed is an electrical storage system that comprises at least one sheet-like discrete element, wherein the following relationship applies to a product of maximum load temperature .sub.Max, in C., and coefficient of linear thermal expansion of the at least one sheet-like discrete element: 600.Math.10.sup.6.sub.Max.Math.8000.Math.10.sup.6, particularly preferably 800.Math.10.sup.6.sub.Max.Math.5000.Math.10.sup.6.

[0082] Also disclosed is an electrical storage system in which the at least one sheet-like discrete element comprises at least one oxide or a mixture or compound of a plurality of oxides.

[0083] Also disclosed is an electrical storage system in which the at least one sheet-like discrete element contains SiO.sub.2 as an oxide.

[0084] Also disclosed is an electrical storage system in which the at least one sheet-like discrete element is a glass.

[0085] Also disclosed is an electrical storage system in which the at least one sheet-like discrete element was formed into a sheet-like shape by a melting process with a subsequent shaping process.

[0086] Also disclosed is an electrical storage system in which the at least one sheet-like discrete element was formed by a shaping process which is a drawing process.

[0087] Also disclosed is a sheet-like discrete element for use in an electrical storage system, which sheet-like discrete element in particular in case of a thickness of 30 m has a transmittance in a range from 200 nm to 270 nm of 20% or less transmittance, and/or of 2.0% or less in particular preferably at 222 nm, of 1.0% or less in particular preferably at 248 nm, of 50% or less in particular preferably at 282 nm, of 85% or less in particular preferably at 308 nm, and of 92% or less in particular preferably at 351 nm, and in particular in case of a thickness of 100 m has a transmittance in the range from 200 nm to 270 nm of 3% or less, and/or of 3.0% or less in particular preferably at 222 nm, of 3.0% or less in particular preferably at 248 nm, of 20% or less in particular preferably at 282 nm, of 75% or less in particular preferably at 308 nm, and of 92% or less in particular preferably at 351 nm.

[0088] Also disclosed is a sheet-like discrete element for use in an electrical storage system, which in particular in case of a thickness of 30 m has a transmittance in the range from 200 nm to 270 nm of 15% or less, and/or a transmittance of 2.0% or less in particular preferably at 222 nm, of 1.0% or less in particular preferably at 248 nm, of 10% or less in particular preferably at 282 nm, of 80% or less in particular preferably at 308 nm, and of 92% or less in particular preferably at 351 nm.

[0089] Also disclosed is a sheet-like discrete element for use in an electrical storage system, the sheet-like discrete element exhibiting a thickness variation of not more than 25 m, preferably of not more than 15 m, more preferably of not more than 10 m, and most preferably of not more than 5 m, based on wafer or substrate sizes in a range of >100 mm in diameter, in particular with a lateral dimension of 100 mm100 mm, preferably based on wafer or substrate sizes in a range of >200 mm in diameter, in particular with a lateral dimension of 200 mm200 mm, and more preferably based on wafer or substrate sizes in a range of >400 mm in diameter, in particular with a lateral dimension of 400 mm400 mm.

[0090] Also disclosed is a sheet-like discrete element for use in an electrical storage system, the sheet-like discrete element exhibiting a water vapor transmission rate (WVTR) of <10.sup.3 g/(m.sup.2.Math.d), preferably of <10.sup.6 g/(m.sup.2.Math.d), and more preferably of <10.sup.6 g/(m.sup.2.Math.d).

[0091] Also disclosed is a sheet-like discrete element for use in an electrical storage system, the sheet-like discrete element having a thickness of less than 2 mm, preferably less than 1 mm, more preferably less than 500 m, yet more preferably of less than or equal to 200 m, and most preferably of not more than 100 m.

[0092] Also disclosed is a sheet-like discrete element for use in an electrical storage system, the sheet-like discrete element having a specific electrical resistance at a temperature of 350 C. and at alternating current with a frequency of 50 Hz of greater than 1.0*10.sup.6 Ohm.Math.cm.

[0093] Also disclosed is a sheet-like discrete element for use in an electrical storage system, the sheet-like discrete element exhibiting a maximum load temperature .sub.Max of at least 300 C., preferably at least 400 C., most preferably at least 500 C.

[0094] Also disclosed is a sheet-like discrete element for use in an electrical storage system, the sheet-like discrete element having a coefficient of linear thermal expansion in a range from 2.0*10.sup.6/K to 10*10.sup.6/K, preferably from 2.5*10.sup.6/K to 9.5*10.sup.6/K, and most preferably from 3.0*10.sup.6/K to 9.5*10.sup.6/K.

[0095] Also disclosed is a sheet-like discrete element for use in an electrical storage system, wherein the following relationship applies to a product of maximum load temperature .sub.Max, in C., and coefficient of linear thermal expansion of the at least one sheet-like discrete element: 600.Math.10.sup.6.sub.Max.Math.8000.Math.10.sup.6, particularly preferably 800.Math.10.sup.6.sub.Max.Math.5000.Math.10.sup.6.

[0096] Also disclosed is a sheet-like discrete element for use in an electrical storage system, the sheet-like discrete element comprising at least one oxide or a mixture or compound of a plurality of oxides.

[0097] Also disclosed is a sheet-like discrete element for use in an electrical storage system in which the at least one oxide is SiO.sub.2.

[0098] Also disclosed is a sheet-like discrete element for use in an electrical storage system in which the element is made of glass.

[0099] Also disclosed is a sheet-like discrete element for use in an electrical storage system in which the element was formed into a sheet-like shape by a melting process with a subsequent shaping process.

[0100] Also disclosed is a sheet-like discrete element for use in an electrical storage system in which the subsequent shaping process comprises a drawing process.

[0101] Also disclosed is a method for producing a thin film storage element that comprises at least one sheet-like discrete element, the method comprising: [0102] providing a sheet-like discrete element; [0103] depositing at least one functional layer of a thin film storage element; [0104] processing the at least one functional layer by focusing UV light onto the sheet-like discrete element which thereby absorbs the UV radiation and converts it into heat energy, which heat energy serves for thermal post-treatment of the at least one functional layer.

[0105] Also within the scope of the invention are discrete sheet-like elements of greater or smaller thickness, if these thicker or thinner discrete sheet-like elements meet the values of the disclosure when converted into a thickness of 30 m.

[0106] Thicker substrates may be thinned to a thickness of 30 m in order to determine whether they fall into the scope of protection.

[0107] Thinner discrete elements may also be brought to a thickness of 30 m by being stacked and optionally thinned, if necessary, so that instead of the converting a physical measurement of transmittance can be performed in order to determine whether these thinner substrates fall into the scope of protection.

LIST OF REFERENCE NUMERALS

[0108] 1 Electrical storage system [0109] 2 Sheet-like discrete element used as a substrate [0110] 3 Cathode collector layer [0111] 4 Anode collector layer [0112] 5 Cathode [0113] 6 Electrolyte [0114] 7 Anode [0115] 8 Encapsulation layer [0116] 10 Sheet-like discrete element in the form of a sheet-like shaped body