ELECTRICAL STORAGE SYSTEM INCLUDING A SHEET-LIKE DISCRETE ELEMENT, SHEET-LIKE DISCRETE ELEMENT, METHOD FOR PRODUCING SAME, AND USE THEREOF

Abstract

An electrical storage element is provided that includes at least one discrete sheet-like element with increased transparency to high-energy electrical radiation. Discrete sheet-like elements exhibiting increased transparency to high-energy electrical radiation and the manufacturing thereof are also provided.

Claims

1. An electrical storage system, comprising: a sheet-like discrete element, wherein the sheet-like discrete element has a transmittance selected from the group consisting of: 0.1% or more in a range from 200 nm to 270 nm at a thickness of 30 m, more than 0.5% at 222 nm at a thickness of 30 m, more than 0.3% at 248 nm at a thickness of 30 m, more than 3% at 282 nm at a thickness of 30 m, more than 50% at 308 nm at a thickness of 30 m, more than 88% at 351 nm at a thickness of 30 m, 0.1% or more from 200 nm to 270 nm at a thickness of 100 m, more than 0.5% at 222 nm at a thickness of 100 m, more than 0.3% at 248 nm at a thickness of 100 m, more than 0.1% at 282 nm at a thickness of 100 m, more than 30% at 308 nm at a thickness of 100 m, more than 88% at 351 nm at a thickness of 100 m, and wherein the sheet-like discrete element has a thickness variation of not more than 25 m based on wafer or substrate sizes in a range of >100 mm in diameter.

2. The electrical storage system as claimed in claim 1, wherein the transmittance is 15% or more in the range from 200 nm to 270 nm at a thickness of 30 m.

3. The electrical storage system as claimed in claim 1, wherein the thickness variation is not more than 5 m.

4. The electrical storage system as claimed in claim 1, wherein the sheet-like discrete element exhibits a water vapor transmission rate (WVTR) of <10.sup.3 g/(m.sup.2.Math.d).

5. The electrical storage system as claimed in claim 1, wherein the sheet-like discrete element has a thickness of less than 2 mm.

6. The electrical storage system as claimed in claim 1, wherein the sheet-like discrete element has a thickness of less than or equal to 100 m.

7. The electrical storage system as claimed in claim 1, wherein the sheet-like discrete element has a specific electrical resistance at a temperature of 350 C. and at alternating current with a frequency of 50 Hz of greater than 1.0*10.sup.6 Ohm.Math.cm.

8. The electrical storage system as claimed in claim 1, wherein the sheet-like discrete element exhibits a maximum load temperature .sub.Max of at least 300 C.

9. The electrical storage system as claimed in claim 1, wherein the sheet-like discrete element has a coefficient of linear thermal expansion a in a range from 2.0*10.sup.6/K to 10*10.sup.6/K.

10. The electrical storage system as claimed in claim 1, wherein the sheet-like discrete element has a maximum load temperature .sub.Max of at least 300 C., a coefficient of linear thermal expansion a in a range from 2.0*10.sup.6/K to 10*10.sup.6/K, and a product of the maximum load temperature and the coefficient of linear thermal expansion of 600.Math.10.sup.6.sub.max.Math.8000.Math.10.sup.6.

11. The electrical storage system as claimed in claim 1, wherein the sheet-like discrete element comprises at least one oxide or a mixture or compound of a plurality of oxides.

12. The electrical storage system as claimed in claim 1, wherein the sheet-like discrete element contains SiO.sub.2 as an oxide.

13. The electrical storage system as claimed in claim 1, wherein the sheet-like discrete element is a glass.

14. The electrical storage system as claimed in claim 1, further comprising a region processed by high-energy electromagnetic radiation.

15. The electrical storage system as claimed in claim 14, wherein the high-energy electromagnetic radiation comprises a range of wavelengths from 200 to 400 nm.

16. The electrical storage system as claimed in claim 14, wherein the high-energy electromagnetic radiation was passed through the sheet-like discrete element.

17. The electrical storage system as claimed in claim 14, wherein the region comprises lithium cobalt oxide (LCO).

18. The electrical storage system as claimed in claim 17, wherein lithium cobalt oxide (LCO) has influenced structural properties.

19. The electrical storage system as claimed in claim 17, wherein the lithium cobalt oxide (LCO) comprises a phase transition at least in sections thereof.

20. The electrical storage system as claimed in claim 19, wherein the phase transition comprises a phase transition from a cubic close-packing of equal spheres into a hexagonal close-packing of equal spheres.

21. A sheet-like discrete element for use in an electrical storage system, comprising a transmittance selected from the group consisting of: 0.1% or more in a range from 200 nm to 270 nm at a thickness of 30 m, more than 0.5% at 222 nm at a thickness of 30 m, more than 0.3% at 248 nm at a thickness of 30 m, more than 3% at 282 nm at a thickness of 30 m, more than 50% at 308 nm at a thickness of 30 m, more than 88% at 351 nm at a thickness of 30 m, 0.1% or more from 200 nm to 270 nm at a thickness of 100 m, more than 0.5% at 222 nm at a thickness of 100 m, more than 0.3% at 248 nm at a thickness of 100 m, more than 0.1% at 282 nm at a thickness of 100 m, more than 30% at 308 nm at a thickness of 100 m, more than 88% at 351 nm at a thickness of 100 m, wherein the sheet-like discrete element has a thickness variation of not more than 25 m based on wafer or substrate sizes in a range of >100 mm in diameter.

22. The sheet-like discrete element in particular as claimed in claim 21, wherein the transmittance is 15% or more in the range from 200 nm to 270 nm at a thickness of 30 m.

23. The sheet-like discrete element as claimed in claim 21, wherein the thickness variation is not more than 5 m.

24. The sheet-like discrete element as claimed in claim 21, further comprising a water vapor transmission rate (WVTR) of <10.sup.3 g/(m.sup.2.Math.d).

25. The sheet-like discrete element as claimed in claim 21, further comprising a thickness of less than 2 mm.

26. The sheet-like discrete element as claimed in claim 21, further comprising a thickness of less than or equal to 100 m.

27. The sheet-like discrete element as claimed in claim 21, further comprising a specific electrical resistance at a temperature of 350 C. and at alternating current with a frequency of 50 Hz of greater than 1.0*10.sup.6 Ohm.Math.cm.

28. The sheet-like discrete element as claimed in claim 21, further comprising a maximum load temperature .sub.Max of at least 300 C.

29. The sheet-like discrete element as claimed in claim 21, further comprising a coefficient of linear thermal expansion a in a range from 2.0*10.sup.6/K to 10*10.sup.6/K.

30. The sheet-like discrete element as claimed in claim 21, further comprising a maximum load temperature .sub.Max of at least 300 C., a coefficient of linear thermal expansion a in a range from 2.0*10.sup.6/K to 10*10.sup.6/K, and a product of the maximum load temperature and the coefficient of linear thermal expansion of 600.Math.10.sup.6.sub.Max.Math.8000.Math.10.sup.6.

31. The sheet-like discrete element as claimed in claim 21, further comprising at least one oxide or a mixture or compound of a plurality of oxides.

32. The sheet-like discrete element as claimed in claim 31, wherein the at least one oxide is SiO.sub.2.

33. The sheet-like discrete element as claimed in claim 21, wherein the element is made of glass.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0091] FIG. 1 schematically shows an electrical storage system according to the present invention;

[0092] FIG. 2 schematically illustrates a sheet-like discrete element according to the present invention;

[0093] FIG. 3 shows transmittance profiles of a sheet-like discrete element according to the invention at three different thicknesses;

[0094] FIG. 4 shows transmittance profiles for three different thicknesses for the glass BOROFLOAT33 from Schott AG;

[0095] FIG. 5 shows transmittance data for another sheet-like discrete element of the invention with three different thicknesses;

[0096] FIG. 6 shows transmittance data for another sheet-like discrete element of the invention with two different thicknesses;

[0097] FIG. 7 shows transmittance data for a further sheet-like discrete element of the invention with two different thicknesses; and

[0098] FIG. 8 shows transmittance data for a further sheet-like discrete element of the invention with two different thicknesses.

DETAILED DESCRIPTION

[0099] FIG. 1 schematically shows an electrical storage system 1 according to the present invention. It comprises a sheet-like discrete element 2 which is used as a substrate. A sequence of different layers is applied on the substrate. By way of example and without being limited to the present example, first the two collector layers are applied on the sheet-like discrete element 2, cathode collector layer 3, and anode collector layer 4. Such collector layers usually have a thickness of a few micrometers and are made of a metal, for example of copper, aluminum, or titanium. Superimposed on collector layer 3 is cathode layer 5. If the electrical storage system 1 is a lithium-based thin film battery, the cathode is made of a lithium/transition metal compound, preferably an oxide, for example of LiCoO.sub.2, of LiMnO.sub.2, or else of LiFePO.sub.4. Furthermore, the electrolyte 6 is applied on the substrate and is at least partially overlapping cathode layer 5. In the case of a lithium-based thin film battery, this electrolyte is mostly LiPON, a compound of lithium with oxygen, phosphorus, and nitrogen. Furthermore, the electrical storage system 1 comprises an anode 7 which may for instance be made of lithium titanium oxide or else of metallic lithium. Anode layer 7 is at least partially overlapping electrolyte layer 6 and collector layer 4. Furthermore, the electrical storage system 1 comprises an encapsulation layer 8.

[0100] In the context of the present invention, any material which prevents or greatly reduces the attack of fluids or other corrosive materials on the electrical storage system 1 is considered as an encapsulation or sealing of the electrical storage system 1.

[0101] FIG. 2 schematically illustrates a sheet-like discrete element according to the present invention, here in the form of a sheet-like shaped body 10. In the context of the present invention, a shaped body is referred to as being sheet-like or a sheet if its dimension in one spatial direction is not more than half of that in the two other spatial directions. A shaped body is referred to as a ribbon in the present invention if it has a length, width, and thickness for which the following relationship applies: the length is at least ten times larger than the width which in turn is at least twice as large as the thickness.

[0102] FIG. 3 shows, by way of example, transmittance profiles of a sheet-like discrete element according to the invention which has a composition according to exemplary embodiment 4, with three different thicknesses. At rather large wavelengths, clearly perceptible interference effects occur, which are caused by measurement technology and thus do not represent a characteristic of the discrete sheet-like element.

[0103] FIG. 4 shows transmittance profiles for three different thicknesses for the glass BOROFLOAT33 from Schott AG. The composition of the glass corresponds to exemplary embodiment 7.

[0104] FIG. 5 shows transmittance data for another sheet-like discrete element of the invention, which has a composition according to exemplary embodiment 5, with three different thicknesses. At rather large wavelengths, clearly perceptible interference effects occur, which are caused by measurement technology and thus do not represent a characteristic of the discrete sheet-like element.

[0105] FIG. 6 shows transmittance data for another sheet-like discrete element of the invention, which has a composition according to exemplary embodiment 6, with two different thicknesses. At rather large wavelengths, clearly perceptible interference effects occur, which are caused by measurement technology and thus do not represent a characteristic of the discrete sheet-like element. Moreover, for the sheet-like discrete element of 30 m thickness preparation-related surface defects were obtained, which in the measurement cause an increase in the scattered fraction and hence a reduction of the transmittance of the sheet-like discrete element illustrated herein, which takes effect starting at wavelengths of about 250 nm and above. These preparation-related defects thus do not represent a characteristic of the sheet-like discrete element.

[0106] FIG. 7 shows transmittance data for a further sheet-like discrete element of the invention, which has a composition according to exemplary embodiment 10, with two different thicknesses. In the range of wavelengths below 400 nm the transmittance profile shows effects which are presumably caused by fluorescence due to the cerium contained in the composition of the sheet-like discrete element.

[0107] FIG. 8 shows transmittance data for a further sheet-like discrete element of the invention, which has a composition according to exemplary embodiment 12, with two different thicknesses.

[0108] As part of the present specification, an electrical storage system is disclosed, comprising at least one sheet-like discrete element which in particular in case of a thickness of 30 m has a transmittance in a range from 200 nm to 270 nm of 0.1% or more, and/or a transmittance of more than 0.5% in particular preferably at 222 nm, of more than 0.3% in particular preferably at 248 nm, of more than 3% in particular preferably at 282 nm, of more than 50% in particular preferably at 308 nm, and of more than 88% in particular preferably at 351 nm, and in particular in case of a thickness of 100 m has a transmittance in the range from 200 nm to 270 nm of 0.1% or more, and/or of more than 0.5% in particular preferably at 222 nm, of more than 0.3% in particular preferably at 248 nm, of more than 0.1% in particular preferably at 282 nm, of more than 30% in particular preferably at 308 nm, and of more than 88% in particular preferably at 351 nm.

[0109] Also disclosed is an electrical storage system comprising at least one sheet-like discrete element which in particular in case of a thickness of 30 m has a transmittance in the range from 200 nm to 270 nm of 15% or more and/or a transmittance of more than 0.5% in particular preferably at 222 nm, of more than 0.3% in particular preferably at 248 nm, of more than 3% in particular preferably at 282 nm, of more than 50% in particular preferably at 308 nm, and of more than 88% in particular preferably at 351 nm.

[0110] Also disclosed is an electrical storage system comprising at least one sheet-like discrete element, wherein the sheet-like discrete element exhibits a thickness variation of not more than 25 m, preferably of not more than 15 m, more preferably of not more than 10 m, and most preferably of not more than 5 m, based on wafer or substrate sizes in a range of >100 mm in diameter, in particular with a lateral dimension of 100 mm100 mm, preferably based on wafer or substrate sizes in a range of >200 mm in diameter, in particular with a lateral dimension of 200 mm200 mm, and more preferably based on wafer or substrate sizes in a range of >400 mm in diameter, in particular with a lateral dimension of 400 mm400 mm.

[0111] Also disclosed is an electrical storage system comprising at least one sheet-like discrete element, the at least one sheet-like discrete element exhibiting a water vapor transmission rate (WVTR) of <10.sup.3 g/(m.sup.2.Math.d), preferably of <10.sup.5 g/(m.sup.2.Math.d), and more preferably of <10.sup.6 g/(m.sup.2.Math.d).

[0112] Also disclosed is an electrical storage system in which the sheet-like discrete element has a thickness of less than 2 mm, preferably less than 1 mm, more preferably less than 500 m, yet more preferably of less than or equal to 200 m, and most preferably of less than or equal to 100 m.

[0113] Also disclosed is an electrical storage system comprising at least one sheet-like discrete element, wherein the at least one sheet-like discrete element has a specific electrical resistance at a temperature of 350 C. and at alternating current with a frequency of 50 Hz of greater than 1.0*10.sup.6 Ohm.Math.cm.

[0114] Also disclosed is an electrical storage system comprising at least one sheet-like discrete element, wherein the at least one sheet-like discrete element exhibits a maximum load temperature .sub.Max of at least 300 C., preferably at least 400 C., most preferably at least 500 C.

[0115] Also disclosed is an electrical storage system comprising at least one sheet-like discrete element, wherein the at least one sheet-like discrete element has a coefficient of linear thermal expansion a in a range from 2.0*10.sup.6/K to 10*10.sup.6/K, preferably from 2.5*10.sup.6/K to 9.5*10.sup.6/K, and most preferably from 3.0*10.sup.6/K to 9.5*10.sup.6/K.

[0116] Also disclosed is an electrical storage system comprising at least one sheet-like discrete element, wherein the following relationship applies to a product of maximum load temperature .sub.Max, in C., and coefficient of linear thermal expansion a of the at least one sheet-like discrete element: 600.Math.10.sup.6.sub.Max.Math.8000.Math.10.sup.6, particularly preferably 800.Math.10.sup.6.sub.Max.Math.5000.Math.10.sup.6.

[0117] Also disclosed is an electrical storage system in which the at least one sheet-like discrete element comprises at least one oxide or a mixture or compound of a plurality of oxides.

[0118] Also disclosed is an electrical storage system in which the at least one sheet-like discrete element contains SiO.sub.2 as an oxide.

[0119] Also disclosed is an electrical storage system in which the at least one sheet-like discrete element is a glass.

[0120] Also disclosed is an electrical storage system in which the at least one sheet-like discrete element was formed into a sheet-like shape by a melting process with a subsequent shaping process.

[0121] Also disclosed is an electrical storage system in which the subsequent shaping process is a drawing process.

[0122] Also disclosed is an electrical storage system in which at least one region of the storage system was processed using high-energy electromagnetic radiation, preferably in a range of wavelengths from 200 to 400 nm.

[0123] Also disclosed is an electrical storage system in which the at least one region of the storage system that was processed using high-energy electromagnetic radiation preferably in a range of wavelengths from 200 to 400 nm was supplied with the high-energy electromagnetic radiation passing through the sheet-like discrete element.

[0124] Also disclosed is an electrical storage system in which the at least one region of the storage system that was processed using high-energy electromagnetic radiation comprises a lithium cobalt oxide (LCO).

[0125] Also disclosed is an electrical storage system in which in the at least one region of the storage system that was processed using high-energy electromagnetic radiation, the lithium cobalt oxide (LCO) was influenced in its structural properties.

[0126] Also disclosed is an electrical storage system in which in the at least one region of the storage system that was processed using high-energy electromagnetic radiation, a phase transition of the lithium cobalt oxide (LCO) has been caused at least in sections thereof.

[0127] Also disclosed is an electrical storage system in which in the at least one region of the storage system that was processed using high-energy electromagnetic radiation, the phase transition of the lithium cobalt oxide (LCO) at least in sections thereof comprises a phase transition from a cubic close-packing of equal spheres into a hexagonal close-packing of equal spheres.

[0128] Also disclosed is a sheet-like discrete element for use in an electrical storage system, which in particular in case of a thickness of 30 m has a transmittance in a range from 200 nm to 270 nm of 0.1% or more, and/or of more than 0.5% in particular preferably at 222 nm, of more than 0.3% in particular preferably at 248 nm, of more than 3% in particular preferably at 282 nm, of more than 50% in particular preferably at 308 nm, and of more than 88% in particular preferably at 351 nm, and in particular in case of a thickness of 100 m has a transmittance in the range from 200 nm to 270 nm of 0.1% or more, and/or of more than 0.5% in particular preferably at 222 nm, of more than 0.3% in particular preferably at 248 nm, of more than 0.1% in particular preferably at 282 nm, of more than 30% in particular preferably at 308 nm, and of more than 88% in particular preferably at 351 nm.

[0129] Also disclosed is a sheet-like discrete element for use in an electrical storage system, which in particular in case of a thickness of 30 m has a transmittance in the range from 200 nm to 270 nm of 15% or more and/or a transmittance of more than 0.5% in particular preferably at 222 nm, of more than 0.3% in particular preferably at 248 nm, of more than 3% in particular preferably at 282 nm, of more than 50% in particular preferably at 308 nm, and of more than 88% in particular preferably at 351 nm.

[0130] Also disclosed is a sheet-like discrete element for use in an electrical storage system, the sheet-like discrete element exhibiting a thickness variation of not more than 25 m, preferably of not more than 15 m, more preferably of not more than 10 m, and most preferably of not more than 5 m, based on wafer or substrate sizes in a range of >100 mm in diameter, in particular with a lateral dimension of 100 mm100 mm, preferably based on wafer or substrate sizes in a range of >200 mm in diameter, in particular with a lateral dimension of 200 mm200 mm, and more preferably based on wafer or substrate sizes in a range of >400 mm in diameter, in particular with a lateral dimension of 400 mm400 mm.

[0131] Also disclosed is a sheet-like discrete element for use in an electrical storage system, the sheet-like discrete element exhibiting a water vapor transmission rate (WVTR) of <10.sup.3 g/(m.sup.2.Math.d), preferably of <10.sup.6 g/(m.sup.2.Math.d), and more preferably of <10.sup.6 g/(m.sup.2.Math.d).

[0132] Also disclosed is a sheet-like discrete element for use in an electrical storage system, wherein the sheet-like discrete element has a thickness of less than 2 mm, preferably less than 1 mm, more preferably less than 500 m, yet more preferably of less than or equal to 200 m, and most preferably of smaller than or equal to 100 m.

[0133] Also disclosed is a sheet-like discrete element for use in an electrical storage system, wherein the sheet-like discrete element has a specific electrical resistance at a temperature of 350 C. and at alternating current with a frequency of 50 Hz of greater than 1.0*10.sup.6 Ohm.Math.cm.

[0134] Also disclosed is a sheet-like discrete element for use in an electrical storage system, the sheet-like discrete element exhibiting a maximum load temperature .sub.Max of at least 300 C., preferably at least 400 C., most preferably at least 500 C.

[0135] Also disclosed is a sheet-like discrete element for use in an electrical storage system, wherein the sheet-like discrete element has a coefficient of linear thermal expansion a in a range from 2.0*10.sup.6/K to 10*10.sup.6/K, preferably from 2.5*10.sup.6/K to 9.5*10.sup.6/K, and most preferably from 3.0*10.sup.6/K to 9.5*10.sup.6/K.

[0136] Also disclosed is a sheet-like discrete element for use in an electrical storage system, wherein the following relationship applies to a product of maximum load temperature .sub.Max, in C., and coefficient of linear thermal expansion a of the at least one sheet-like discrete element: 600.Math.10.sup.6.sub.Max.Math.8000.Math.10.sup.6, particularly preferably 800.Math.10.sup.6.sub.Max.Math.5000.Math.10.sup.6.

[0137] Also disclosed is a sheet-like discrete element for use in an electrical storage system, in which the sheet-like discrete element comprises at least one oxide or a mixture or compound of a plurality of oxides.

[0138] Also disclosed is a sheet-like discrete element for use in an electrical storage system, in which the at least one oxide is SiO.sub.2.

[0139] Also disclosed is a sheet-like discrete element for use in an electrical storage system, in which the element is made of glass.

[0140] Also disclosed is a sheet-like discrete element for use in an electrical storage system, in which the element is formed into a sheet-like shape by a melting process with a subsequent shaping process.

[0141] Also disclosed is a sheet-like discrete element for use in an electrical storage system, in which the subsequent shaping process comprises a drawing process.

[0142] Also within the scope of the invention are discrete sheet-like elements of greater or smaller thickness, if these thicker or thinner discrete sheet-like elements meet the values of the recited herein when converted into a thickness of 30 m.

[0143] Thicker substrates may be thinned to a thickness of 30 m in order to determine whether they fall into the scope of protection.

[0144] Thinner discrete elements may also be brought to a thickness of 30 m by being stacked and optionally thinned, if necessary, so that instead of the converting a physical measurement of transmittance can be performed in order to determine whether these thinner substrates fall into the scope of protection.

LIST OF REFERENCE NUMERALS

[0145] 1 Electrical storage system [0146] 2 Sheet-like discrete element used as a substrate [0147] 3 Cathode collector layer [0148] 4 Anode collector layer [0149] 5 Cathode [0150] 6 Electrolyte [0151] 7 Anode [0152] 8 Encapsulation layer [0153] 10 Sheet-like discrete element in the form of a sheet-like shaped body