METHOD FOR FORMING LaNiO3 THIN FILM

Abstract

A method for forming a LaNiO.sub.3 thin film is provided, the method including: a step of forming a coating film by coating a substrate surface which is coated with a Pt electrode with a LaNiO.sub.3 thin film-forming liquid composition and drying the LaNiO.sub.3 thin film-forming liquid composition in a state where amounts of H.sub.2, H.sub.2O, and CO adsorbed on the substrate surface per 1 cm.sup.2 are 1.010.sup.10 g or less, 2.710.sup.10 g or less, and 4.210.sup.10 g or less, respectively; a step of pre-baking the coating film; and a step of forming a LaNiO.sub.3 thin film by baking the pre-baked coating film.

Claims

1. A method for forming a LaNiO.sub.3 thin film, the method comprising: a step of forming a coating film by coating a substrate surface which is coated with a Pt electrode with a LaNiO.sub.3 thin film-forming liquid composition and drying the LaNiO.sub.3 thin film-forming liquid composition in a state where amounts of H.sub.2, H.sub.2O, and CO adsorbed on the substrate surface per 1 cm.sup.2 are 1.010.sup.10 g or less, 2.710.sup.10 g or less, and 4.210.sup.10 g or less, respectively; a step of pre-baking the coating film; and a step of forming a LaNiO.sub.3 thin film by baking the pre-baked coating film.

2. The method for forming a LaNiO.sub.3 thin film according to claim 1, wherein the LaNiO.sub.3 thin film-forming liquid composition contains one or more organic solvents selected from the group consisting of carboxylic acids, alcohols, esters, ketones, ethers, cycloalkanes, and aromatic compounds.

3. The method for forming a LaNiO.sub.3 thin film according to claim 1, wherein the LaNiO.sub.3 thin film-forming liquid composition contains an inorganic metal compound and/or an organic metal compound, the inorganic metal compound is a nitrate or a chloride, and the organic metal compound is a carboxylate, a -diketonate, or an alkoxide.

4. The method for forming a LaNiO.sub.3 thin film according to claim 3, wherein the nitrate is lanthanum nitrate or nickel nitrate, the chloride is lanthanum chloride or nickel chloride, the carboxylate is lanthanum acetate, nickel acetate, lanthanum 2-ethylhexanoate, or nickel 2-ethylhexanoate, the -diketonate is lanthanum acetylacetonate or nickel acetylacetonate, and the alkoxide is lanthanum isopropoxide.

5. The method for forming a LaNiO.sub.3 thin film according to claim 2, wherein the organic solvent is a single solvent or a mixed solvent of two or more solvents selected from the group consisting of acetic acid, 2-ethylhexanoic acid, ethylene glycol monopropyl ether, ethylene glycol monoisopropyl ether, 3-methoxy-1-butanol, and ethanol.

6. A method for manufacturing a device, wherein the device includes an electrode having a LaNiO.sub.3 thin film which is formed using the method according to claim 1, and the device is a composite electronic component which is a thin film capacitor, a capacitor, an IPD, a DRAM memory capacitor, a laminated capacitor, a ferroelectric random access memory capacitor, a pyroelectric infrared-detecting element, a piezoelectric element, an electro-optic element, an actuator, a resonator, an ultrasonic motor, an electric switch, an optical switch, or an LC noise filter element.

7. The method for manufacturing a device according to claim 6, wherein the LaNiO.sub.3 thin film is a crystal orientation-controlling layer of a dielectric layer formed in the electrode.

8. A method for manufacturing a device, wherein the device includes an electrode having a LaNiO.sub.3 thin film which is formed using the method according to claim 2, and the device is a composite electronic component which is a thin film capacitor, a capacitor, an IPD, a DRAM memory capacitor, a laminated capacitor, a ferroelectric random access memory capacitor, a pyroelectric infrared-detecting element, a piezoelectric element, an electro-optic element, an actuator, a resonator, an ultrasonic motor, an electric switch, an optical switch, or an LC noise filter element.

9. A method for manufacturing a device, wherein the device includes an electrode having a LaNiO.sub.3 thin film which is formed using the method according to claim 3, and the device is a composite electronic component which is a thin film capacitor, a capacitor, an IPD, a DRAM memory capacitor, a laminated capacitor, a ferroelectric random access memory capacitor, a pyroelectric infrared-detecting element, a piezoelectric element, an electro-optic element, an actuator, a resonator, an ultrasonic motor, an electric switch, an optical switch, or an LC noise filter element.

10. A method for manufacturing a device, wherein the device includes an electrode having a LaNiO.sub.3 thin film which is formed using the method according to claim 4, and the device is a composite electronic component which is a thin film capacitor, a capacitor, an IPD, a DRAM memory capacitor, a laminated capacitor, a ferroelectric random access memory capacitor, a pyroelectric infrared-detecting element, a piezoelectric element, an electro-optic element, an actuator, a resonator, an ultrasonic motor, an electric switch, an optical switch, or an LC noise filter element.

11. A method for manufacturing a device, wherein the device includes an electrode having a LaNiO.sub.3 thin film which is formed using the method according to claim 5, and the device is a composite electronic component which is a thin film capacitor, a capacitor, an IPD, a DRAM memory capacitor, a laminated capacitor, a ferroelectric random access memory capacitor, a pyroelectric infrared-detecting element, a piezoelectric element, an electro-optic element, an actuator, a resonator, an ultrasonic motor, an electric switch, an optical switch, or an LC noise filter element.)

12. The method for manufacturing a device according to claim 8, wherein the LaNiO.sub.3 thin film is a crystal orientation-controlling layer of a dielectric layer formed in the electrode.

13. The method for manufacturing a device according to claim 9, wherein the LaNiO.sub.3 thin film is a crystal orientation-controlling layer of a dielectric layer formed in the electrode.

14. The method for manufacturing a device according to claim 10, wherein the LaNiO.sub.3 thin film is a crystal orientation-controlling layer of a dielectric layer formed in the electrode.

15. The method for manufacturing a device according to claim 11, wherein the LaNiO.sub.3 thin film is a crystal orientation-controlling layer of a dielectric layer formed in the electrode.

Description

EXAMPLES

[0041] Next, examples of the present invention and comparative examples will be described in detail.

[Preparation of LaNiO.SUB.3 .Thin Film-Forming Liquid Composition]

[0042] The following composition was prepared as a LaNiO.sub.3 thin film-forming liquid composition. As La materials, lanthanum acetate, lanthanum nitrate, lanthanum chloride, lanthanum acetylacetonate, and lanthanum triisopropoxide were prepared. As Ni materials, nickel acetate, nickel nitrate, nickel chloride, and nickel acetylacetonate were prepared. As organic solvents, acetic acid, 2-ethylhexanoic acid, 3-methoxy-1-butanol, ethanol, ethylene glycol monopropyl ether, and ethylene glycol monoisopropyl ether were prepared. According to each of the compositions shown in Table 1 below, a La material, a Ni material, and an organic solvent were mixed with each other, were dehydrated by distillation, and were mixed with N-methylformamide as a stabilizer in an amount five times the total molar number of La and Ni. Further, the mass of the mixture was adjusted using the same organic solvent as the organic solvent used above. In this way, six LaNiO.sub.3 thin film-forming liquid compositions were prepared. This liquid composition was prepared by mixing the La material and the Ni material with each other such that the liquid composition contains each of metal oxides thereof in an amount of 4 mass % in terms of oxides in which a metal ratio La:Ni was 1:1.

TABLE-US-00001 TABLE 1 Composition No. La Material Ni Material Organic Acid 1 Lanthanum Nickel Acetate Acetic Acid Acetate 2 Lanthanum Nickel Nitrate Ethylene Glycol Nitrate Monopropyl Ether 3 Lanthanum Nickel Chloride Ethylene Glycol Chloride Monoisopropyl Ether 4 Lanthanum Nickel 3-Methoxy-1-Butanol Acetylacetonate Acetylacetonate 5 Lanthanum Nickel Acetate Ethylene Glycol Triisopropoxide Monopropyl Ether, Ethanol 6 Lanthanum Nickel 2-Ethylhexanoic Acid 2-Ethylhexanoate 2-Ethylhexanoate

[Pre-Baking of Pt Substrate and Formation of LaNiO.SUB.3 .Thin Film]

Example 1

[0043] A SiO.sub.2 layer, a TiO.sub.2 layer, and a Pt layer (top layer) were laminated in this order on a Si base material having a size of 17 mm17 mm which was oriented to (100) plane. The Pt layer was formed by sputtering a Pt source in an argon atmosphere at room temperature, and then was not heated in an argon atmosphere. The substrate (hereinafter, referred to as Pt substrate) was placed on a hot plate heated to 300 C. for 1 minute and then was pre-baked in the air. After the pre-baking, the Pt substrate was allowed to cool. Next, immediately, molecular species adsorbed on the Pt substrate surface were identified using thermal desorption spectroscopy (hereinafter, referred to as TDS). On the other hand, the Pt substrate was pre-baked under the same conditions as described above, and then immediately was moved onto a spin coater so as to be spin-coated with Composition No. 1 shown in Table 1 without being left to stand in the air. Next, the substrate was moved onto a hot plate heated to 65 C., was dried for 1 minute, and was further moved to a hot plate heated to 450 C. so as to be pre-baked for 5 minutes. The pre-baked film was rapid-thermally annealed (RTA) to 800 C. so as to be baked in an oxygen atmosphere for 5 minutes. As a result, a LaNiO.sub.3 thin film was formed.

Example 2

[0044] The same Pt substrate as that of Example 1 was pre-baked using the same hot plate as that of Example 1 at 300 C. for 5 minutes and then was allowed to cool. Next, immediately, molecular species adsorbed on the Pt substrate surface were identified using TDS. On the other hand, the Pt substrate was pre-baked under the same conditions as described above, and then immediately was moved onto a spin coater so as to be spin-coated with Composition No. 2 shown in Table 1 without being left to stand in the air. Next, the Pt substrate was dried, pre-baked, and baked under the same conditions as those of Example 1. As a result, a LaNiO.sub.3 thin film was formed.

Example 3

[0045] The same Pt substrate as that of Example 1 was pre-baked using the same hot plate as that of Example 1 at 200 C. for 1 minute and then was allowed to cool. Next, immediately, molecular species adsorbed on the Pt substrate surface were identified using TDS. On the other hand, the Pt substrate was pre-baked under the same conditions as described above, and then immediately was moved onto a spin coater so as to be spin-coated with Composition No. 3 shown in Table 1 without being left to stand in the air. Next, the Pt substrate was dried, pre-baked, and baked under the same conditions as those of Example 1. As a result, a LaNiO.sub.3 thin film was formed.

Example 4

[0046] The same Pt substrate as that of Example 1 was pre-baked using the same hot plate as that of Example 1 at 200 C. for 5 minutes and then was allowed to cool. Next, immediately, molecular species adsorbed on the Pt substrate surface were identified using TDS. On the other hand, the Pt substrate was pre-baked under the same conditions as described above, and then immediately was moved onto a spin coater so as to be spin-coated with Composition No. 4 shown in Table 1 without being left to stand in the air. Next, the Pt substrate was dried, pre-baked, and baked under the same conditions as those of Example 1. As a result, a LaNiO.sub.3 thin film was formed.

Example 5

[0047] The same Pt substrate as that of Example 1 was pre-baked using the same hot plate as that of Example 1 at 400 C. for 1 minute and then was allowed to cool. Next, immediately, molecular species adsorbed on the Pt substrate surface were identified using TDS. On the other hand, the Pt substrate was pre-baked under the same conditions as described above, and then immediately was moved onto a spin coater so as to be spin-coated with Composition No. 5 shown in Table 1 without being left to stand in the air. Next, the Pt substrate was dried, pre-baked, and baked under the same conditions as those of Example 1. As a result, a LaNiO.sub.3 thin film was formed.

Example 6

[0048] The same Pt substrate as that of Example 1 was pre-baked using the same hot plate as that of Example 1 at 400 C. for 5 minutes and then was allowed to cool. Next, immediately, molecular species adsorbed on the Pt substrate surface were identified using TDS. On the other hand, the Pt substrate was pre-baked under the same conditions as described above, and then immediately was moved onto a spin coater so as to be spin-coated with Composition No. 6 shown in Table 1 without being left to stand in the air. Next, the Pt substrate was dried, pre-baked, and baked under the same conditions as those of Example 1. As a result, a LaNiO.sub.3 thin film was formed.

Example 7

[0049] The same Pt substrate as that of Example 1 was pre-baked using the same hot plate as that of Example 1 at 300 C. for 1 minute and then was left to stand at 232 C. in the air of 5010% for 60 minutes. Next, molecular species adsorbed on the Pt substrate surface were identified using TDS. On the other hand, the Pt substrate was pre-baked under the same conditions as described above, was left to stand at 232 C. in the air of 5010% for 60 minutes, and then immediately was moved onto a spin coater so as to be spin-coated with Composition No. 1 shown in Table I. Next, the Pt substrate was dried, pre-baked, and baked under the same conditions as those of Example 1. As a result, a LaNiO.sub.3 thin film was formed.

Example 8

[0050] The same Pt substrate as that of Example 1 was pre-baked using the same hot plate as that of Example l at 300 C. for 5 minutes and then was left to stand at 232 C. in the air of 5010% for 60 minutes. Next, molecular species adsorbed on the Pt substrate surface were identified using TDS. On the other hand, the Pt substrate was pre-baked under the same conditions as described above, was left to stand at 232 C. in the air of 5010% for 60 minutes, and then immediately was moved onto a spin coater so as to be spin-coated with Composition No. 2 shown in Table 1. Next, the Pt substrate was dried, pre-baked, and baked under the same conditions as those of Example 1. As a result, a LaNiO.sub.3 thin film was formed.

Example 9

[0051] The same Pt substrate as that of Example 1 was pre-baked using the same hot plate as that of Example 1 at 200 C. for 1 minute and then was left to stand at 232 C. in the air of 5010% for 60 minutes. Next, molecular species adsorbed on the Pt substrate surface were identified using TDS. On the other hand, the Pt substrate was pre-baked under the same conditions as described above, was left to stand at 232 C. in the air of 5010% for 60 minutes, and then immediately was moved onto a spin coater so as to be spin-coated with Composition No. 3 shown in Table 1. Next, the Pt substrate was dried, pre-baked, and baked under the same conditions as those of Example 1. As a result, a LaNiO.sub.3 thin film was formed.

Example 10

[0052] The same Pt substrate as that of Example 1 was pre-baked using the same hot plate as that of Example 1 at 200 C. for 5 minutes and then was left to stand at 232 C. in the air of 5010% for 60 minutes. Next, molecular species adsorbed on the Pt substrate surface were identified using TDS. On the other hand, the Pt substrate was pre-baked under the same conditions as described above, was left to stand at 232 C. in the air of 5010% for 60 minutes, and then immediately was moved onto a spin coater so as to be spin-coated with Composition No. 4 shown in Table 1. Next, the Pt substrate was dried, pre-baked, and baked under the same conditions as those of Example 1. As a result, a LaNiO.sub.3 thin film was formed.

Example 11

[0053] The same Pt substrate as that of Example 1 was pre-baked using the same hot plate as that of Example 1 at 400 C. for 1 minute and then was left to stand at 232 C. in the air of 5010% for 60 minutes. Next, molecular species adsorbed on the Pt substrate surface were identified using TDS. On the other hand, the Pt substrate was pre-baked under the same conditions as described above, was left to stand at 232 C. in the air of 5010% for 60 minutes, and then immediately was moved onto a spin coater so as to be spin-coated with Composition No. 5 shown in Table 1. Next, the Pt substrate was dried, pre-baked, and baked under the same conditions as those of Example 1. As a result, a LaNiO.sub.3 thin film was formed.

Example 12

[0054] The same Pt substrate as that of Example 1 was pre-baked using the same hot plate as that of Example 1 at 400 C. for 5 minutes and then was left to stand at 232 C. in the air of 5010% for 60 minutes. Next, molecular species adsorbed on the Pt substrate surface were identified using TDS. On the other hand, the Pt substrate was pre-baked under the same conditions as described above, was left to stand at 232 C. in the air of 5010% for 60 minutes, and then immediately was moved onto a spin coater so as to be spin-coated with Composition No. 6 shown in Table 1. Next, the Pt substrate was dried, pre-baked, and baked under the same conditions as those of Example 1. As a result, a LaNiO.sub.3 thin film was formed.

Comparative Example 1

[0055] Using the same Pt substrate as that of Example 1 except that it is was not pre-baked, molecular species adsorbed on the Pt substrate surface were identified using

[0056] TDS. On the other hand, the non-pre-baked Pt substrate was moved onto a spin coater so as to be spin-coated with Composition No. 1 shown in Table 1. Next, the Pt substrate was dried, pre-baked, and baked under the same conditions as those of Example 1. As a result, a LaNiO.sub.3 thin film was formed.

Comparative Example 2

[0057] The same Pt substrate as that of Example 1 was pre-baked using the same hot plate as that of Example 1 at 150 C. for 5 minutes and then was allowed to cool. Next, immediately, molecular species adsorbed on the Pt substrate surface were identified using TDS. On the other hand, the Pt substrate was pre-baked under the same conditions as described above, and then immediately was moved onto a spin coater so as to be spin-coated with Composition No. 2 shown in Table 1 without being left to stand in the air. Next, the Pt substrate was dried, pre-baked, and baked under the same conditions as those of Example 1. As a result, a LaNiO.sub.3 thin film was formed.

Comparative Example 3

[0058] The same Pt substrate as that of Example 1 was pre-baked using the same hot plate as that of Example 1 at 300 C. for 5 minutes and then was left to stand at 232 C. in the air of 5010% for 90 minutes. Next, molecular species adsorbed on the Pt substrate surface were identified using TDS. On the other hand, the Pt substrate was pre-baked under the same conditions as described above, was left to stand at 232 C. in the air of 5010% for 60 minutes, and then immediately was moved onto a spin coater so as to be spin-coated with Composition No. 3 shown in Table 1. Next, the Pt substrate was dried, pre-baked, and baked under the same conditions as those of Example 1. As a result, a LaNiO.sub.3 thin film was formed.

Comparative Example 4

[0059] The same Pt substrate as that of Example 1 was pre-baked using the same hot plate as that of Example 1 at 200 C. for 5 minutes and then was left to stand at 232 C. in the air of 5010% for 90 minutes. Next, molecular species adsorbed on the Pt substrate surface were identified using TDS. On the other hand, the Pt substrate was pre-baked under the same conditions as described above, was left to stand at 232 C. in the air of 5010% for 60 minutes, and then immediately was moved onto a spin coater so as to be spin-coated with Composition No. 4 shown in Table 1. Next, the Pt substrate was dried, pre-baked, and baked under the same conditions as those of Example 1. As a result, a LaNiO.sub.3 thin film was formed.

Comparative Example 5

[0060] The same Pt substrate as that of Example 1 was pre-baked using the same hot plate as that of Example 1 at 400 C. for 5 minutes and then was left to stand at 232 C. in the air of 5010% for 90 minutes. Next, molecular species adsorbed on the Pt substrate surface were identified using TDS. On the other hand, the Pt substrate was pre-baked under the same conditions as described above, was left to stand at 232 C. in the air of 5010% for 60 minutes, and then immediately was moved onto a spin coater so as to be spin-coated with Composition No. 5 shown in Table 1. Next, the Pt substrate was dried, pre-baked, and baked under the same conditions as those of Example 1. As a result, a LaNiO.sub.3 thin film was formed.

Evaluation

[0061] The amount of desorption gas of molecular species adsorbed on the Pt substrate surface immediate after pre-baking in each of Examples 1 to 12 and Comparative Examples 1 to 5 was measured in a temperature range of 50 C. to 400 C. using a high-accuracy temperature-programmed desorption gas analyzer (TDS 1200, manufactured by ESCO Ltd.). Based on this measurement, the amount of adsorption of each of H.sub.2, H.sub.2O, and CO was obtained. In addition, regarding each of Examples 1 to 12 and Comparative Examples 1 to 5, whether or not there were pinholes in the dry coating film and whether or not there were voids in the LaNiO.sub.3 thin film were investigated by visual inspection over the entire region of the substrate. The results are shown in Table 2 below.

TABLE-US-00002 TABLE 2 Pt Substrate Molecular Species Adsorbed on Pt Substrate Surface and Amount of Pre-Baking Standing Desorption Coating Thin Conditions Time After H.sub.2 H.sub.2O CO Film Film Temperature Time Pre-Baking (g/cm.sup.2) (g/cm.sup.2) (g/cm.sup.2) Pinholes Voids Example 1 300 C. 1 min 0 min 4.0 10.sup.12 9.0 10.sup.11 1.4 10.sup.10 None None Example 2 300 C. 5 min 0 min 2.2 10.sup.12 8.1 10.sup.11 1.3 10.sup.10 None None Example 3 200 C. 1 min 0 min 5.0 10.sup.12 1.2 10.sup.10 1.8 10.sup.10 None None Example 4 200 C. 5 min 0 min 4.2 10.sup.12 9.9 10.sup.11 1.5 10.sup.10 None None Example 5 400 C. 1 min 0 min 2.4 10.sup.12 8.5 10.sup.11 1.3 10.sup.10 None None Example 6 400 C. 5 min 0 min 2.0 10.sup.12 7.2 10.sup.11 1.2 10.sup.10 None None Example 7 300 C. 1 min 60 min 7.0 10.sup.11 1.8 10.sup.10 3.1 10.sup.10 None None Example 8 300 C. 5 min 60 min 6.8 10.sup.11 1.8 10.sup.10 3.1 10.sup.10 None None Example 9 200 C. 1 min 60 min 9.8 10.sup.11 2.5 10.sup.10 3.9 10.sup.10 None None Example 10 200 C. 5 min 60 min 9.6 10.sup.11 2.3 10.sup.10 3.4 10.sup.10 None None Example 11 400 C. 1 min 60 min 6.6 10.sup.11 1.8 10.sup.10 2.8 10.sup.10 None None Example 12 400 C. 5 min 60 min 6.4 10.sup.11 1.8 10.sup.10 3.1 10.sup.10 None None Comparative 2.2 10.sup.10 4.1 10.sup.9 5.9 10.sup.9 Present Present Example 1 Comparative 150 C. 5 min 0 min 1.8 10.sup.10 1.4 10.sup.9 2.1 10.sup.9 Present Present Example 2 Comparative 300 C. 5 min 90 min 1.6 10.sup.10 3.2 10.sup.10 5.6 10.sup.10 Present Present Example 3 Comparative 200 C. 5 min 90 min 1.8 10.sup.10 3.6 10.sup.10 5.9 10.sup.10 Present Present Example 4 Comparative 400 C. 5 min 90 min 1.6 10.sup.10 3.2 10.sup.10 5.3 10.sup.10 Present Present Example 5

[0062] As can be seen from Table 2, in Comparative Example 1 in which pre-baking was not performed, Comparative Example 2 in which the pre-baking temperature was 150 C., and Comparative Examples 3 to 5 in which the standing time after pre-baking was 90 minutes, the amount of H.sub.2 adsorbed on the Pt substrate surface was 1.610.sup.10 g/cm.sup.2 to 2.210.sup.10 g/cm.sup.2, the amount of H.sub.2O adsorbed on the Pt substrate surface was 3.210.sup.10 g/cm.sup.2 to 4.110.sup.9 g/cm.sup.2, and the amount of CO adsorbed on the Pt substrate surface was 5.310.sup.10 g/cm.sup.2 to 5.910.sup.9 g/cm.sup.2. In addition, in Comparative Examples 1 to 5, pinholes were formed on the coating film, and voids were formed on the LaNiO.sub.3 thin film. On the other hand, in Examples 1 to 12, in which the pre-baking temperature was 200 C. to 400 C., the pre-baking time was 1 minute to 5 minutes, and the standing time after pre-baking was 0 minutes to 60 minutes, the amount of H.sub.2 adsorbed on the Pt substrate surface was 2.010.sup.12 g/cm.sup.2 to 9.810.sup.11 g/cm.sup.2, the amount of H.sub.2O adsorbed on the Pt substrate surface was 7.210.sup.11 g/cm.sup.2 to 2.510.sup.10 g/cm.sup.2, and the amount of CO adsorbed on the Pt substrate surface was 1.210.sup.10 g/cm.sup.2 to 3.910.sup.10 g/cm.sup.2. That is, the amounts of H.sub.2, H.sub.2O, and CO were less than those of Comparative Examples 1 to 5. In addition, in Examples 1 to 12, no pinholes were formed on the coating film, and no voids were formed on the LaNiO.sub.3 thin film. In addition, in the LaNiO.sub.3 thin films of Comparative Examples 1 to 5, convex and concave portions were partially observed by visual inspection. On the other hand, the LaNiO.sub.3 thin films of Examples 1 to 12 had a uniform thickness without convex and concave portions being formed thereon.

INDUSTRIAL APPLICABILITY

[0063] The present invention can be used for manufacturing an electrode in a device, the electrode including a LaNiO.sub.3 thin film, and the device being a composite electronic component such as a thin film capacitor, a capacitor, an IPD, a DRAM memory capacitor, a laminated capacitor, a ferroelectric random access memory capacitor, a pyroelectric infrared-detecting element, a piezoelectric element, an electro-optic element, an actuator, a resonator, an ultrasonic motor, an electric switch, an optical switch, or an LC noise filter element.