Precursor compounds for atomic layer deposition (ALD) and chemical vapor deposition (CVD) and ALD/CVD process using the same

Abstract

The present invention relates to precursor compounds, and more particularly to nonpyrophoric precursor compounds suitable for use in thin film deposition through atomic layer deposition (ALD) or chemical vapor deposition (CVD), and to an ALD/CVD process using the same.

Claims

1. A compound represented by Chemical Formula 1 below: ##STR00018## in Chemical Formula 1, when M is a divalent transition metal of Group 12 on a periodic table, n is 1; when M is a trivalent transition metal of Group 13 on a periodic table, n is 2; R.sub.1 to R.sub.3 and R.sub.5 are hydrogen, a substituted or unsubstituted C1 to C4 linear or branched alkyl group or an isomer thereof; and R.sub.4 is a tert-butyl group, wherein the compound has an atomic layer deposition (ALD) window of 130 to 320° C.

2. The compound of claim 1, wherein the M in Chemical Formula 1 is selected from Al, Zn, In and Ga.

3. The compound of claim 1, wherein the R.sub.1 to R.sub.3 and R.sub.5 in Chemical Formula 1 are selected from hydrogen, a methyl group, an ethyl group, an n-propyl group, an iso-propyl group, an n-butyl group, an iso-butyl group, a sec-butyl group, a tert-butyl group and an isomer thereof.

4. The compound of claim 1, wherein the R.sub.1 is a methyl group; the R.sub.2 and R.sub.3 are hydrogen or a methyl group; and the R.sub.5 is a methyl group or an ethyl group.

5. The compound of claim 1, wherein the Chemical Formula 1 is selected from Al(CH.sub.3).sub.2[CH.sub.3OC(CH.sub.3).sub.2CH.sub.2NtBu], Al(CH.sub.3).sub.2[CH.sub.3OCH(CH.sub.3)CH.sub.2NtBu], Al(CH.sub.3).sub.2[CH.sub.3OCH.sub.2CH.sub.2NtBu], Zn(CH.sub.3)[CH.sub.3OCH.sub.2CH.sub.2NtBu], Zn(CH.sub.3)[CH.sub.3OC(CH.sub.3).sub.2CH.sub.2NtBu], Zn(Et)[CH.sub.3OC(CH.sub.3).sub.2CH.sub.2NtBu], In(CH.sub.3).sub.2[CH.sub.3OCH.sub.2CH.sub.2NtBu], and Ga(CH.sub.3).sub.2[CH.sub.3OCH.sub.2CH.sub.2NtBu] (wherein Et is ethyl, and tBu is a tert-butyl group).

6. A precursor comprising the compound of claim 1.

7. A method of manufacturing a thin film, comprising introducing a precursor comprising the compound of claim 1 into a reactor; and injecting a reactive gas, wherein the reactive gas is O.sub.3 or H.sub.2O, wherein the method is conducted at a process temperature of 130 to 320° C., and the method is atomic layer deposition (ALD).

Description

BRIEF DESCRIPTION OF DRAWINGS

(1) FIG. 1 is a graph showing the results of thermogravimetric analysis (TGA) of the properties of novel precursor compounds according to the present invention;

(2) FIG. 2 is a graph showing changes in the thin film deposition rate depending on the precursor injection time in the atomic layer deposition process of the compound of Comparative Example 1 and the compound of Example 1 using ozone (O.sub.3) as an oxidizing agent in Preparation Example 1, in which the thin film deposition rate is uniform;

(3) FIG. 3 is a graph showing changes in the thin film deposition rate depending on the processing temperature in the atomic layer deposition process of the compound of Comparative Example 1 and the compound of Example 1 using ozone (O.sub.3) as an oxidizing agent in Preparation Example 1, in which a stable thin film deposition rate depending on the temperature and thus a wide processing temperature range (ALD window) are exhibited in Example 1;

(4) FIG. 4 is a graph showing the results of X-ray photoelectron spectroscopy (XPS) of the component content of the Al.sub.2O.sub.3 thin film resulting from atomic layer deposition (ALD) of the compound of Example 1, in the atomic layer deposition process of the compound of Comparative Example 1 and the compound of Example 1 using ozone (O.sub.3) as an oxidizing agent in Preparation Example 1;

(5) FIG. 5 is a graph showing changes in the thin film deposition rate depending on the precursor injection time in the atomic layer deposition process of the compound of Comparative Example 1 and the compound of Example 1 using water (H.sub.2O) as an oxidizing agent in Preparation Example 2, in which the thin film deposition rate is uniform;

(6) FIG. 6 is a graph showing changes in the thin film deposition rate depending on the processing temperature in the atomic layer deposition process of the compound of Comparative Example 1 and the compound of Example 1 using water (H.sub.2O) as an oxidizing agent in Preparation Example 2, in which a stable thin film deposition rate depending on the processing temperature and thus a wide processing temperature range (ALD window) are exhibited in Example 1;

(7) FIG. 7 is a graph showing the results of XPS of the component content of the Al.sub.2O.sub.3 thin film resulting from atomic layer deposition (ALD) of the compound of Example 1, in the atomic layer deposition process of the compound of Comparative Example 1 and the compound of Example 1 using water (H.sub.2O) as an oxidizing agent in Preparation Example 2;

(8) FIG. 8 is a graph showing the thickness of the Al.sub.2O.sub.3 thin film depending on the deposition cycles in the atomic layer deposition process of the compound of Example 1 using water (H.sub.2O) as an oxidizing agent in Preparation Example 2;

(9) FIG. 9 is a graph showing the Al.sub.2O.sub.3 thin film deposition rate and the density depending on the temperature in the atomic layer deposition process of the compound of Example 1 using water (H.sub.2O) as an oxidizing agent in Preparation Example 2; and

(10) FIG. 10 is transmission electron microscopy (TEM) images showing the results of step coverage in the atomic layer deposition process of the compound of Example 1 using water (H.sub.2O) as an oxidizing agent in Preparation Example 2, in which the processing temperature is 150° C. or 300° C., showing the hole structure and the trench structure, the aspect ratio (AR) of the hole structure being 26:1 and the aspect ratio of the trench structure being 40:1.

DESCRIPTION OF SPECIFIC EMBODIMENTS

(11) Hereinafter, a detailed description will be given of embodiments of the present invention, which may be easily performed by those skilled in the art to which the present invention belongs. However, the present invention may be embodied in a variety of different forms, and is not limited to the embodiments herein.

(12) An aspect of the present invention pertains to a compound represented by Chemical Formula 1 below.

(13) ##STR00002##

(14) In Chemical Formula 1, when M is a divalent transition metal of Group 12 on the periodic table, n is 1; when M is a trivalent transition metal of Group 13 on the periodic table, n is 2; and R.sub.1 to R.sub.5 are hydrogen, a substituted or unsubstituted C1 to C4 linear or branched alkyl group, or an isomer thereof.

(15) In an embodiment of the present invention, M in Chemical Formula 1 may include, but is not limited to, any one selected from the group consisting of Al, Zn, In and Ga.

(16) In an embodiment of the present invention, R.sub.1 to R.sub.5 in Chemical Formula 1 may include, but are not limited to, any one selected from the group consisting of hydrogen, a methyl group, an ethyl group, an n-propyl group, an iso-propyl group, an n-butyl group, an iso-butyl group, a sec-butyl group, a tert-butyl group and isomers thereof.

(17) In the above compound, M and R.sub.1 to R.sub.5 may be at least one selected from the group consisting of combinations of the above-listed examples, but are not limited thereto.

(18) In an embodiment of the present invention, the precursor compound of Chemical Formula 1 may be a solid or a liquid at room temperature, and also has high volatility and thermal stability, high reactivity with various oxidizing agents, and a wide processing temperature range (ALD window) in an ALD process.

(19) In an embodiment of the present invention, the compound of Chemical Formula 1 may be used as an alternative to an existing commercially available pyrophoric compound. The existing commercially available compound is composed exclusively of a transition metal and a homoleptic alkyl group, and specific examples thereof may include AlMe.sub.3, AlEt.sub.3, ZnMe.sub.2, ZnEt.sub.2, GaMe.sub.3, GaEt.sub.3, InMe.sub.3, and InEt.sub.3 (Me: methyl, Et: ethyl).

(20) The thin film deposition process includes an atomic layer deposition (ALD) process and a chemical vapor deposition (CVD) process.

(21) The atomic layer deposition process is a technique for forming a thin film through a self-limiting reaction by alternately feeding elements for use in forming a thin film. The atomic layer deposition process is able to deposit a very thin film and to precisely control the desired thickness and composition. This process enables the formation of a film having a uniform thickness on a large-area substrate, and exhibits superior step coverage even at a high aspect ratio. Furthermore, the thin film contains small amounts of impurities.

(22) The chemical vapor deposition process is a technique for forming a desired thin film on the surface of a substrate by applying appropriate activity and reactive energy through injection of reactive gas into a reactor. This process enables mass production, is cost-effective, makes it possible to deposit various kinds of elements and compounds, and makes it easy to obtain a thin film having various properties by virtue of wide processing control ranges, and moreover realizes superior step coverage.

(23) In an embodiment of the present invention, a precursor composition for use in the atomic layer deposition (ALD) and the chemical vapor deposition (CVD) includes a compound represented by Chemical Formula 1 below.

(24) ##STR00003##

(25) In an embodiment of the present invention, M in Chemical Formula 1 may be a transition metal of Groups 12 and 13 on the periodic table, and preferably M is any one selected from the group consisting of Al, Zn, In and Ga, but is not limited thereto.

(26) In an embodiment of the present invention, R.sub.1 to R.sub.5 in Chemical Formula 1 may be any one selected from the group consisting of hydrogen, a methyl group, an ethyl group, an n-propyl group, an iso-propyl group, an n-butyl group, an iso-butyl group, a sec-butyl group, a tert-butyl group and isomers thereof. Preferable is a compound in which R.sub.1 is a methyl group, R.sub.2 and R.sub.3 are hydrogen or a methyl group, R.sub.4 is a tert-butyl group, and R.sub.5 is a methyl group or an ethyl group. More preferable is any one selected from the group consisting of Al(CH.sub.3).sub.2[CH.sub.3OC(CH.sub.3).sub.2CH.sub.2NtBu], Al(CH.sub.3).sub.2[CH.sub.3OCH(CH.sub.3)CH.sub.2NtBu], Al(CH.sub.3).sub.2[CH.sub.3OCH.sub.2CH.sub.2NtBu], Zn(CH.sub.3)[CH.sub.3OCH.sub.2CH.sub.2NtBu], Zn(CH.sub.3)[CH.sub.3OC(CH.sub.3).sub.2CH.sub.2NtBu], Zn(Et)[CH.sub.3OC(CH.sub.3).sub.2CH.sub.2NtBu], In(CH.sub.3).sub.2[CH.sub.3OCH.sub.2CH.sub.2NtBu], and Ga(CH.sub.3).sub.2[CH.sub.3OCH.sub.2CH.sub.2NtBu] (Et: ethyl, tBu: tert-butyl), but the present invention is not limited thereto.

(27) Another aspect of the present invention pertains to a precursor including the compound represented by Chemical Formula 1.

(28) Still another aspect of the present invention pertains to a thin film formed by depositing the precursor including the compound represented by Chemical Formula 1.

(29) Yet another aspect of the present invention pertains to a method of manufacturing a thin film, including introducing a precursor including the compound represented by Chemical Formula 1 into a reactor. Also, the method of manufacturing a thin film according to the present invention provides a method of manufacturing an oxide film, a nitride film, or a metal film using an oxidizing agent, a nitriding agent or a reducing agent.

(30) In an embodiment of the present invention, the ALD processing temperature falls in the range of 80° C. to 400° C., but is not limited thereto, and the preferable processing temperature falls in the range of 130° C. to 320° C.

(31) In an embodiment of the present invention, the injection time of the precursor compound may fall in the range of 0.2 sec to 10 sec, but is not limited thereto, and the preferable injection time is 2 to 10 sec in an 03 process and 1 to 5 sec in a H.sub.2O process.

(32) In an embodiment of the present invention, the oxidizing agent is ozone (O.sub.3) or water (H.sub.2O), but is not limited thereto.

(33) A better understanding of the present invention will be given through the following examples, which are merely set forth to illustrate the present invention but are not to be construed as limiting the present invention.

(34) A typical synthesis process of the present embodiment is represented in Scheme 1 below.

(35) ##STR00004##

(36) Here, the synthesis process when M (transition metal) is Al (aluminum) is represented in Scheme 2 below.

(37) ##STR00005##

(38) [Example 1] Preparation of Al(CH.sub.3).sub.2[CH.sub.3OC(CH.sub.3).sub.2CH.sub.2NtBu]

(39) 1 equivalent of a ligand CH.sub.3OC(CH.sub.3).sub.2CH.sub.2NHtBu was added to 1 equivalent of 2M Al(Me).sub.3, dissolved in hexane or heptane at −78° C., after which the temperature was slowly elevated to room temperature and stirring was performed for about 16 hr. The reaction was completed and the solvent was removed in a vacuum. The compound thus obtained was subjected to vacuum distillation, thereby yielding a colorless liquid precursor Al(CH.sub.3).sub.2[CH.sub.3OC(CH.sub.3).sub.2CH.sub.2NtBu]. .sup.1H NMR (C.sub.6D.sub.6): δ 2.75 (Al(CH.sub.3).sub.2[CH.sub.3OC(CH.sub.3).sub.2CH.sub.2NtBu], s, 2H), 2.63 (Al(CH.sub.3).sub.2[CH.sub.3OC(CH.sub.3).sub.2CH.sub.2NtBu], s, 3H), 1.28 Al(CH.sub.3).sub.2[CH.sub.3OC(CH.sub.3).sub.2CH.sub.2NtBu], s, 9H), 0.83 (Al(CH.sub.3).sub.2[CH.sub.3OC(CH.sub.3).sub.2CH.sub.2NtBu], s, 6H), −0.43 (Al(CH.sub.3).sub.2[CH.sub.3OC(CH.sub.3).sub.2CH.sub.2NtBu], s, 6H).

(40) [Example 2] Preparation of Al(CH.sub.3).sub.2[CH.sub.3OCH(CH.sub.3)CH.sub.2NtBu]

(41) 1 equivalent of a ligand CH.sub.3OCH(CH.sub.3)CH.sub.2NHtBu was added to 1 equivalent of 2M Al(Me).sub.3, dissolved in hexane or heptane at −78° C., after which the temperature was slowly elevated to room temperature and stirring was performed for about 16 hr. The reaction was completed and the solvent was removed in a vacuum. The compound thus obtained was subjected to vacuum distillation, thereby yielding a colorless liquid precursor Al(CH.sub.3).sub.2[CH.sub.3OCH(CH.sub.3)CH.sub.2NtBu]. .sup.1H NMR (C.sub.6D.sub.6): δ 3.40-3.32 (Al(CH.sub.3).sub.2[CH.sub.3OCH(CH.sub.3)CH.sub.2NtBu], m, 1H), 2.88 (Al(CH.sub.3).sub.2[CH.sub.3OCH(CH.sub.3)CH.sub.2NtBu], dd, J, =11.1 Hz, J.sub.2=4.7 Hz, 1H), 2.69-2.65 (Al(CH.sub.3).sub.2[CH.sub.3OCH(CH.sub.3)CH.sub.2NtBu], m, 1H), 2.66 (Al(CH.sub.3).sub.2[CH.sub.3OCH(CH.sub.3)CH.sub.2NtBu], s, 3H), 1.29 (Al(CH.sub.3).sub.2[CH.sub.3OCH(CH.sub.3)CH.sub.2NtBu], s, 9H), 0.68 (Al(CH.sub.3).sub.2[CH.sub.3OCH(CH.sub.3)CH.sub.2NtBu], d, J=5.8 Hz, 3H), −0.40 (Al(CH.sub.3).sub.2[CH.sub.3OCH(CH.sub.3)CH.sub.2NtBu], s, 3H), −0.44 (Al(CH.sub.3).sub.2[CH.sub.3OCH(CH.sub.3)CH.sub.2NtBu], s, 3H).

(42) [Example 3] Preparation of Al(CH.sub.3).sub.2[CH.sub.3OCH.sub.2CH.sub.2NtBu]

(43) 1 equivalent of a ligand CH.sub.3OCH.sub.2CH.sub.2NHtBu was added to 1 equivalent of 2M Al(Me).sub.3 dissolved in hexane or heptane at −78° C., after which the temperature was slowly elevated to room temperature and stirring was performed for about 16 hr. The reaction was completed and the solvent was removed in a vacuum. The compound thus obtained was subjected to vacuum distillation, thereby yielding a colorless liquid precursor Al(CH.sub.3).sub.2[CH.sub.3OCH.sub.2CH.sub.2NtBu]. .sup.1H NMR (C.sub.6D.sub.6): δ 3.09 (Al(CH.sub.3).sub.2[CH.sub.3OCH.sub.2CH.sub.2NtBu], t, J=6.9 Hz, 2H), 2.79 (Al(CH.sub.3).sub.2[CH.sub.3OCH.sub.2CH.sub.2NtBu], t, J=6.9 Hz, 2H), 2.62 (Al(CH.sub.3).sub.2[CH.sub.3OCH.sub.2CH.sub.2NtBu], s, 3H), 1.28 (Al(CH.sub.3).sub.2[CH.sub.3OCH.sub.2CH.sub.2NtBu], s, 9H), −0.44 (Al(CH.sub.3).sub.2[CH.sub.3OCH.sub.2CH.sub.2NtBu], s, 6H).

(44) Here, the synthesis process when M (transition metal) is Zn (zinc) is represented in Scheme 3 below.

(45) ##STR00006##

(46) [Example 4] Preparation of Zn(CH.sub.3)[CH.sub.3OCH.sub.2CH.sub.2NtBu]

(47) 1 equivalent of a ligand CH.sub.3OCH.sub.2CH.sub.2NHtBu was added to 1 equivalent of 1.2M Zn(Me).sub.2 dissolved in toluene at −78° C., after which the temperature was slowly elevated to room temperature and stirring was performed for about 16 hr. The reaction was completed and the solvent was removed in a vacuum. The compound thus obtained was subjected to vacuum distillation, thereby yielding a white solid precursor Zn(CH.sub.3)[CH.sub.3OCH.sub.2CH.sub.2NtBu]. .sup.1H NMR (C.sub.6D.sub.6): δ 3.01-2.96 (Zn(CH.sub.3)[CH.sub.3OCH.sub.2CH.sub.2NtBu], m, 2H), 2.99 (Zn(CH.sub.3)[CH.sub.3OCH.sub.2CH.sub.2NtBu], s, 3H), 2.33-2.29 (Zn(CH.sub.3)[CH.sub.3OCH.sub.2CH.sub.2NtBu], m, 2H), 0.91 (Zn(CH.sub.3)[CH.sub.3OCH.sub.2CH.sub.2NtBu], s, 9H), −0.39 (Zn(CH.sub.3)[CH.sub.3OCH.sub.2CH.sub.2NtBu], s, 3H)

(48) Here, the synthesis process when M (transition metal) is In (indium) is represented in Scheme 4 below.

(49) ##STR00007##

(50) [Example 5] Preparation of In(CH.sub.3).sub.2[CH.sub.3OCH.sub.2CH.sub.2NtBu]

(51) 1 equivalent of a ligand CH.sub.3OCH.sub.2CH.sub.2NHtBu was added to 1 equivalent of In(Me).sub.3.EtO.sub.2 dissolved in toluene at −78° C., after which the temperature was slowly elevated to room temperature and heating to 110° C. was performed for about 16 hr. The reaction was completed and the solvent was removed in a vacuum. The compound thus obtained was subjected to vacuum distillation, thereby yielding a colorless liquid precursor In(CH.sub.3).sub.2[CH.sub.3OCH.sub.2CH.sub.2NtBu]. .sup.1H NMR (C.sub.6D.sub.6): δ 3.21 (In(CH.sub.3).sub.2[CH.sub.3OCH.sub.2CH.sub.2NtBu], t, J=5.5 Hz, 2H), 2.99 (In(CH.sub.3).sub.2[CH.sub.3OCH.sub.2CH.sub.2NtBu], s, 3H), 2.48-2.43 (In(CH.sub.3).sub.2[CH.sub.3OCH.sub.2CH.sub.2NtBu], m, 2H), 0.85 (In(CH.sub.3).sub.2[CH.sub.3OCH.sub.2CH.sub.2NtBu], s, 9H), 0.00 (In(CH.sub.3) 2[CH.sub.3OCH.sub.2CH.sub.2NtBu], s, 6H).

(52) Here, the synthesis process when M (transition metal) is Ga (gallium) is represented in Scheme 5 below.

(53) ##STR00008##

(54) [Example 6] Preparation of Ga(CH.sub.3).sub.2[CH.sub.3OCH.sub.2CH.sub.2NtBu]

(55) 1 equivalent of a ligand CH.sub.3OCH.sub.2CH.sub.2NHtBu was added to 1 equivalent of Ga(Me).sub.3.EtO.sub.2 dissolved in toluene at −78° C., after which the temperature was slowly elevated to room temperature and heating to 110° C. was performed for about 16 hr. The reaction was completed and the solvent was removed in a vacuum. The compound thus obtained was subjected to vacuum distillation, thereby yielding a colorless liquid precursor Ga(CH.sub.3).sub.2[CH.sub.3OCH.sub.2CH.sub.2NtBu]. .sup.1H NMR (C.sub.6D.sub.6): δ 3.21 (Ga(CH.sub.3).sub.2[CH.sub.3OCH.sub.2CH.sub.2NtBu], t, J=5.2 Hz, 2H), 3.00 (Ga(CH.sub.3).sub.2[CH.sub.3OCH.sub.2CH.sub.2NtBu], s, 3H), 2.55-2.51 (Ga(CH.sub.3).sub.2[CH.sub.30 CH.sub.2CH.sub.2NtBu], m, 2H), 0.92 (Ga(CH.sub.3).sub.2[CH.sub.3OCH.sub.2CH.sub.2NtBu], s, 9H), 0.00 (Ga(CH.sub.3).sub.2[CH.sub.3OCH.sub.2CH.sub.2NtBu], s, 6H).

(56) Also, Zn(CH.sub.3)[CH.sub.3OC(CH.sub.3).sub.2CH.sub.2NtBu] in [Example 7] and Zn(Et)[CH.sub.3OC(CH.sub.3).sub.2CH.sub.2NtBu] in [Example 8] were synthesized using the reaction of Scheme 3.

(57) The structural formulas of the synthesized precursors of Examples and Comparative Example are shown in Table 1 below.

(58) TABLE-US-00001 TABLE 1 Precursor Structural Formula Example 1 Al(CH.sub.3).sub.2[CH.sub.3OC(CH.sub.3).sub.2CH.sub.2NtBu] (tBu: tert-Bu) Example 2 Al(CH.sub.3).sub.2[CH.sub.2OCH(CH.sub.3)CH.sub.2NtBu] 0 Example 3 Al(CH.sub.3).sub.2[CH.sub.3OCH.sub.2CH.sub.2NtBu] Example 4 Zn(CH.sub.3)[CH.sub.3OCH.sub.2CH.sub.2NtBu] Example 5 In(CH.sub.3).sub.2[CH.sub.3OCH.sub.2CH.sub.2NtBu] Example 6 Ga(CH.sub.3).sub.2[CH.sub.3OCH.sub.2CH.sub.2NtBu] Example 7 Zn(CH.sub.3)[CH.sub.3OC(CH.sub.3).sub.2CH.sub.2NtBu] Example 8 Zn(Et)[CH.sub.3OC(CH.sub.3).sub.2CH.sub.2NtBu] (Et: ethyl) Comparative Example 1 TMA [trimethylaluminum]

(59) [Test Example 1] Measurement of Properties of Precursor Compounds

(60) The properties of Al(CH.sub.3).sub.2 [CH.sub.3OC(CH.sub.3).sub.2CH.sub.2NtBu], Al(CH.sub.3).sub.2[CH.sub.3OCH(CH.sub.3)CH.sub.2NtBu] and Al(CH.sub.3).sub.2[CH.sub.3OCH.sub.2CH.sub.2NtBu] precursor compounds of Examples were measured. Here, the properties of interest were the state at room temperature (RT), the boiling point, and pyrophoric ignition.

(61) The measured values of the above properties are shown in Table 2 below.

(62) TABLE-US-00002 TABLE 2 Test Example 1 State Boiling point Reactivity in Precursor (RT) (based on bath) atmosphere Example 1 Al(CH.sub.3).sub.2[CH.sub.3OC(CH.sub.3).sub.2CH.sub.2NtBu] Liquid 50° C. @0.3 Torr Nonpyrophoric Example 2 Al(CH.sub.3).sub.2[CH.sub.3OCH(CH.sub.3)CH.sub.2NtBu] Liquid 50° C. @0.3 Torr Nonpyrophoric Example 3 Al(CH.sub.3).sub.2[CH.sub.3OCH.sub.2CH.sub.2NtBu] Liquid 45° C. @0.5 Torr Nonpyrophoric Example 4 Zn(CH.sub.3)[CH.sub.3OCH.sub.2CH.sub.2NtBu] Solid Sublimation point: Nonpyrophoric 35° C. @0.3 Torr Example 5 In(CH.sub.3).sub.2[CH.sub.3OCH.sub.2CH.sub.2NtBu] Liquid 60° C. @0.7 Torr Nonpyrophoric Example 6 Ga(CH.sub.3).sub.2[CH.sub.3OCH.sub.2CH.sub.2NtBu] Liquid 60° C. @0.7 Torr Nonpyrophoric Comparative TMA Liquid 125° C. Pyrophoric Example 1

(63) As is apparent from Table 2, Examples 1 to 6 of the present invention are nonpyrophoric under atmospheric conditions, and are a solid or a liquid at room temperature.

(64) [Test Example 2] Thermogravimetric Analysis (TGA) of Precursor Compounds

(65) The precursor compounds of Example 1 (Al(CH.sub.3).sub.2[CH.sub.3OC(CH.sub.3).sub.2CH.sub.2NtBu]), Example 2 (Al(CH.sub.3).sub.2[CH.sub.3OCH(CH.sub.3)CH.sub.2NtBu]) and Example 3 (Al(CH.sub.3).sub.2[CH.sub.3OCH.sub.2CH.sub.2NtBu]) were subjected to TGA.

(66) Upon TGA, a TGA/DSC 1 STAR′ System available from Mettler Toledo was used as an instrument, and 50 μL of an alumina crucible was used. The amounts of all samples were 10 mg, and measurement was performed in the temperature range of 30° C. to 400° C. The specific conditions and measured values for TGA are shown in Table 3 below and in FIG. 1.

(67) TABLE-US-00003 TABLE 3 Test Example 2 Precursor Example 1 Example 2 Example 3 T.sub.1/2 (° C.) 155 150 132 Residual amount at 300° C. 0.1% 0.6% 0.8%

(68) As is apparent from Table 3, the half-weight loss temperature [T½ (′C)] of the precursors of Examples 1 to 3 is 132° C. to 155° C. Also, the residual amount is almost zero at 300° C., and thermal stability is exhibited without decomposition upon vaporization.

(69) [Preparation Example] Evaluation of Film Formation Through Atomic Layer Deposition (ALD) of Precursor Compound

(70) The precursor compound of Example 1 (Al(CH.sub.3).sub.2[CH.sub.3OC(CH.sub.3).sub.2CH.sub.2NtBu]) was evaluated for film formation through atomic layer deposition (ALD). As oxidizing agents, ozone (O.sub.3) and water (H.sub.2O) were used, and argon (Ar) or nitrogen (N.sub.2) inert gas was used for purging. The injection of the precursor, argon, ozone or water and argon was set as one cycle, and deposition was performed on a silicon (Si) wafer.

(71) As the film formation evaluation items of the thin film manufactured in Preparation Example 1, when ozone (O.sub.3) was used as the oxidizing agent during the processing of the precursor compound of Example 1 (Al(CH.sub.3).sub.2[CH.sub.3OC(CH.sub.3).sub.2CH.sub.2NtBu]), changes in the thin film deposition rate depending on the injection time of the precursor, changes in the thin film deposition rate depending on the processing temperature, and the amounts of aluminum (Al), oxygen (O), and carbon (C) in the deposited thin film and the O/Al ratio through XPS (X-ray photoelectron spectroscopy) were measured.

(72) As the film formation evaluation items of the thin film manufactured in Preparation Example 2, when water (H.sub.2O) was used as the oxidizing agent during the processing of the precursor compound of Example 1 (Al(CH.sub.3).sub.2[CH.sub.3OC(CH.sub.3).sub.2CH.sub.2NtBu]), changes in the thin film deposition rate depending on the injection time of the precursor, changes in the thin film deposition rate depending on the processing temperature, the amounts of aluminum (Al), oxygen (O), and carbon (C) in the deposited thin film and the O/Al ratio through XPS (X-ray photoelectron spectroscopy), changes in the thickness of the thin film depending on the deposition cycles (growth linearity), the density of Al.sub.2O.sub.3 depending on the temperature, and step coverage were measured.

(73) [Preparation Example 1] Evaluation of Film Formation Through Atomic Layer Deposition of Precursor of Example 1 Using 03 as Oxidizing Agent

(74) <Changes in Thin Film Deposition Rate Depending on Precursor Injection Time (Saturation)>

(75) Upon atomic layer deposition (ALD) of the precursor of Example 1 (Al(CH.sub.3).sub.2[CH.sub.3OC(CH.sub.3).sub.2CH.sub.2NtBu]) using ozone (O.sub.3), the injection time of the precursor compound, exhibiting a uniform thin film deposition rate, was measured, and thus a self-limiting reaction was confirmed.

(76) As shown in FIG. 2, the uniform thin film deposition rate was obtained after an injection time of 1 sec when the processing temperature of the precursor of Comparative Example 1 (TMA) was 300° C., and was obtained after an injection time of 4 sec when the processing temperature of the precursor of Example 1 was 260° C.

(77) TABLE-US-00004 TABLE 4 Carrier gas Purging gas Precursor O.sub.3 Precursor injection O.sub.3 Processing injection Injection Purging gas injection Purging gas Temp. amount Concent. Temp. amount time injection time time injection time Processes Precursor (° C.) (sccm) (g/m.sup.3) (° C.) (sccm) (sec) (sec) (sec) (sec) (cycles) Ex.1 40 5 144 260 100   2~10 10 3 10 200 C.Ex.1 5 10 144 300 500 0.2~2 10 1.2 10 200

(78) As is apparent from Table 4, in Example 1, a precursor (2 to 10 sec), Ar (10 sec), 03 (3 sec), and Ar (10 sec) were sequentially fed, and the flow rate of argon (Ar) for purging the precursor was set to 100 sccm. The reactive gas ozone (O.sub.3) was injected at a concentration of 144 g/m.sup.3. The temperature of the precursor was 40° C., the flow rate of the carrier gas was 5 sccm, the processing temperature was 260° C., and the number of process cycles was 200.

(79) In Comparative Example 1, a precursor (0.2 to 2 sec), Ar (10 sec), 03 (1.2 sec), and Ar (10 sec) were sequentially fed, and the flow rate of argon (Ar) for purging the precursor was set to 500 sccm. The reactive gas ozone was injected at a concentration of 144 g/m.sup.3. The temperature of the precursor of Comparative Example 1 was 5° C., the flow rate of the carrier gas was 10 sccm, the processing temperature was 300° C., and the number of process cycles was 200.

(80) <Changes in Thin Film Deposition Rate Depending on Processing Temperature (ALD Window)>

(81) Upon atomic layer deposition (ALD) of the precursor of Example 1 (Al(CH.sub.3).sub.2[CH.sub.3OC(CH.sub.3).sub.2CH.sub.2NtBu]) using ozone (O.sub.3), the thin film deposition rate at different temperatures was measured, and thus the processing temperature range (ALD window) was confirmed. As shown in FIG. 3, the precursor of Example 1 exhibited a uniform thin film deposition rate in a processing temperature range (ALD window) of 150° C. to 320° C.

(82) TABLE-US-00005 TABLE 5 Carrier gas Purging gas Precursor O.sub.3 Precursor injection O.sub.3 Processing injection Injection Purging gas injection Purging gas Temp. amount Concent. Temp. amount time injection time time injection time Processes Precursor (° C.) (sccm) (g/m.sup.3) (° C.) (sccm) (sec) (sec) (sec) (sec) (Cycles) Ex.1 40 5 144 150~320 100 5 10 3 10 200 C.Ex.1 5 10 144 130~320 500 1 10 1.2 10 200

(83) As is apparent from Table 5, the processing temperature range (ALD window) of the precursor of Example 1 was wide to an extent comparable to that of the commercially available precursor (TMA) of Comparative Example 1.

(84) <Element Content in Al.sub.2O.sub.3 Thin Film and O/Al Ratio>

(85) Upon atomic layer deposition (ALD) of the precursor of Example 1 (Al(CH.sub.3).sub.2[CH.sub.3OC(CH.sub.3).sub.2CH.sub.2NtBu]) using ozone (O.sub.3), the element content (atomic %) and the element ratio (atomic ratio, O/Al) depending on the processing temperature were measured through XPS (X-ray photoelectron spectroscopy).

(86) As seen in FIG. 4, the processing temperature fell in the range of 80° C. to 300° C. and the amount of the stoichiometric Al.sub.2O.sub.3 thin film depending on the temperature was determined.

(87) TABLE-US-00006 TABLE 6 Preparation Example 1 Temperature Example 1 (Al(CH.sub.3).sub.2[CH.sub.3OC(CH.sub.3).sub.2CH.sub.2NtBu] + O.sub.3 (° C.) Al (%) O (%) C (%) O/Al Ratio 80 38.91 61.09 — 1.57 200 41.54 58.46 — 1.41 300 42.33 57.67 — 1.36

(88) As is apparent from Table 6, no carbon (C) was observed, even at a low temperature. As the temperature was elevated, the amount of Al (aluminum) was increased and the amount of O (oxygen) was decreased, and thus the O/Al ratio was reduced.

(89) [Preparation Example 2] Evaluation of Film Formation Through Atomic Layer Deposition of Precursor of Example 1 Using H.sub.2O as Oxidizing Agent

(90) <Changes in Thin Film Deposition Rate Depending on Precursor Injection Time (Saturation)>

(91) Upon atomic layer deposition (ALD) of the precursor of Example 1 (Al(CH.sub.3).sub.2[CH.sub.3OC(CH.sub.3).sub.2CH.sub.2NtBu]) using water (H.sub.2O), the injection time of the precursor compound, exhibiting the uniform thin film deposition rate, was measured, and thus a self-limiting reaction was confirmed. As shown in FIG. 5, a uniform thin film deposition rate was obtained after an injection time of the precursor (TMA) of Comparative Example 1 of 1 sec when the processing temperature was 150° C.

(92) TABLE-US-00007 TABLE 7 Carrier Gas Purging Gas Precursor H.sub.2O Precursor Injection H.sub.2O Processing Injection Injection Purging Gas Injection Purging Gas Temp. Amount Temp. Temp. Amount Time Injection Time Time Injection Time Processes Precursor (° C.) (sccm) (° C.) (° C.) (sccm) (sec) (sec) (sec) (sec) (Cycles) Ex.1 40 10 10 150 100 .sup. 1-5 20 1.2 20 200 C.Ex.1 5 10 10 150 500 0.2-2 10 1.2 10 200

(93) As is apparent from Table 7, in Example 1, the precursor (1 to 5 sec), Ar (20 sec), H.sub.2O (1.2 sec), and Ar (20 sec) were sequentially fed, and the flow rate of argon (Ar) for purging the precursor was set to 100 sccm. The temperature of the precursor of Example 1 was 40° C., the flow rate of the carrier gas was 10 sccm, the temperature of water, serving as the oxidizing agent, was 10° C., the processing temperature was 150° C., and the number of process cycles was 200.

(94) In Comparative Example 1, the precursor (0.2 to 2 sec), Ar (10 sec), H.sub.2O (1.2 sec), and Ar (10 sec) were sequentially fed, and the flow rate of argon (Ar) for purging the precursor was set to 500 sccm. The temperature of the precursor of Comparative Example 1 was 5° C., the flow rate of the carrier gas was 10 sccm, the temperature of water, serving as the oxidizing agent, was 10° C., the processing temperature was 150° C., and the number of process cycles was 200.

(95) <Changes in Thin Film Deposition Rate Depending on Processing Temperature (ALD Window)>

(96) Upon atomic layer deposition (ALD) of the precursor of Example 1 (Al(CH.sub.3).sub.2[CH.sub.3OC(CH.sub.3).sub.2CH.sub.2NtBu]) using water (H.sub.2O), the thin film deposition rate at different temperatures was measured and thus the processing temperature range (ALD window) was confirmed. As shown in FIG. 6, the precursor of Example 1 exhibited a uniform thin film deposition rate in the processing temperature range (ALD window) of 130° C. to 320° C. The precursor of Comparative Example 1 showed a uniform thin film deposition rate in the range of 130° C. to 200° C., but the thin film deposition rate was lowered in the range of 200° C. to 320° C. As is apparent from Table 8 below and the above description, the processing temperature range (ALD window) was wider in the precursor of Example 1 than in the precursor of Comparative Example 1.

(97) TABLE-US-00008 TABLE 8 Carrier gas Purging gas Precursor H.sub.2O Precursor injection H.sub.2O Processing injection Injection Purging gas injection Purging gas Temp. amount Temp. Temp. amount time injection time time injection time Processes Precursor (° C.) (sccm) (° C.) (° C.) (sccm) (sec) (sec) (sec) (sec) (Cycles) Ex.1 40 10 10 130-320 100 5 20 1.2 20 200 C.Ex.1 5 10 10 130-320 500 1 10 1.2 10 200

(98) As is apparent from Table 8 and the above description, the precursor of Example 1 had a wider processing temperature range (ALD window) than the commercially available precursor (TMA) of Comparative Example 1. Furthermore, upon measurement of the processing temperature range, in the precursor of Comparative Example 1, the amount of the purging gas that was injected was five times that of Example 1, the injection time of the precursor was one fifth as long thereof, and the injection time of the purging gas was half thereof.

(99) <Element Content in Al.sub.2O.sub.3 Thin Film and O/Al Ratio>

(100) Upon atomic layer deposition (ALD) of the precursor of Example 1 (Al(CH.sub.3).sub.2[CH.sub.3OC(CH.sub.3).sub.2CH.sub.2NtBu]) using water (H.sub.2O), the element content (atomic %) and the element ratio (atomic ratio, O/Al) depending on the processing temperature were measured through XPS (X-ray photoelectron spectroscopy).

(101) As seen in FIG. 7, the processing temperature fell in the range of 150° C. to 300° C., and the amount of stoichiometric Al.sub.2O.sub.3 thin film was determined depending on the temperature.

(102) TABLE-US-00009 TABLE 9 Preparation Example 2 Temperature Example 1 (Al(CH.sub.3).sub.2[CH.sub.3OC(CH.sub.3).sub.2CH.sub.2NtBu]) + H.sub.2O (° C.) Al (%) O (%) C (%) O/Al ratio 150 37.93 59.36 1.93 1.57 300 38.7 60.3 0.99 1.56

(103) As is apparent from Table 9, the amounts of Al (aluminum) and O (oxygen) and the O/Al ratios were similar at temperatures of 150° C. and 300° C.

(104) <Changes in Thickness of Thin Film Depending on Process Cycles (Growth Linearity)>

(105) Upon atomic layer deposition (ALD) of the precursor of Example 1 (Al(CH.sub.3).sub.2[CH.sub.3OC(CH.sub.3).sub.2CH.sub.2NtBu]) using water (H.sub.2O), changes in the thickness of the thin film depending on the deposition cycles were similar at temperatures of 150° C. and 300° C. FIG. 8 is a graph showing changes in the thickness of the thin film depending on the process cycles, showing that the thin film deposition rate was 0.91 Å/cycle at 150° C. and 0.93 Å/cycle at 300° C.

(106) <Density of Al.sub.2O.sub.3 Thin Film at Different Temperatures (Film Density by XRR)>

(107) Upon atomic layer deposition (ALD) of the precursor of Example 1 (Al(CH.sub.3).sub.2[CH.sub.3OC(CH.sub.3).sub.2CH.sub.2NtBu]) using water (H.sub.2O), the density of the thin film depending on the processing temperature was found to increase with an elevation in the temperature, and the density of the thin film was higher when using the precursor of Example 1 than when using the precursor of Comparative Example 1, which is apparent from FIG. 9 and Table 10 below. Table 10 below shows the density of Al.sub.2O.sub.3(Bulk) and the density depending on the temperature upon atomic layer deposition of the precursor (TMA) of Comparative Example 1 using water (H.sub.2O), in connection with which reference may be made to Chem. Mater. 2004, 16, 639.

(108) TABLE-US-00010 TABLE 10 Al.sub.2O.sub.3 Density Bulk 3.70-3.80 g/cm.sup.3 Example 3.20 g/cm.sup.3 (150° C.) 3.60 g/cm.sup.3 (300° C.) Comparative Example 1 2.46 g/cm.sup.3 (33° C.) 3.06 g/cm.sup.3 (177° C.)

(109) <Step Coverage of Al.sub.2O.sub.3 Thin Film at Different Temperatures (Step Coverage by TEM)>

(110) Upon atomic layer deposition (ALD) of the precursor of Example 1 (Al(CH.sub.3).sub.2[CH.sub.3OC(CH.sub.3).sub.2CH.sub.2NtBu]) using water (H.sub.2O), the step coverage of the hole and trench structures depending on the temperature was observed through TEM (Transmission Electron Microscopy). The processing temperatures were 150° C. and 300° C., and the aspect ratio (AR) was 26:1 in the hole structure and 40:1 in the trench structure.

(111) TABLE-US-00011 TABLE 11 Hole structure Trench structure [AR 26:1] [AR 40:1] 150° C. 300° C. 150° C. 300° C. Top thickness 21.57 nm 21.41 nm 20.92 nm 22.82 nm Side thickness 22.18 nm 22.42 nm 21.45 nm 22.80 nm Bottom thickness 21.13 nm 20.89 nm 20.64 nm 22.50 nm Bottom step coverage  97.9%  97.5%  98.6% 98.6% Side step coverage 102.8% 104.7% 102.5% 99.9%

(112) As is apparent from Table 11, the step coverage in the hole and trench structures was 98% or more at 150° C. and 300° C. Thus, the precursor of Example 1 exhibited superior step coverage in a wide temperature range.

(113) Although embodiments of the present invention have been described, those skilled in the art will appreciate that the present invention may be embodied in other specific forms without changing the technical spirit or essential features thereof. Thus, the embodiments described above should be understood to be non-limiting and illustrative in every way.

(114) The scope of the present invention is represented by the following claims, rather than the detailed description, and it is to be understood that the meaning and scope of the claims and all variations or modified forms derived from equivalent concepts thereof fall within the scope of the present invention.