Sputtering target for magnetic recording film and process for production thereof

Abstract

A sputtering target for a magnetic recording film containing SiO.sub.2, wherein a peak strength ratio of a (011) plane of quartz relative to a background strength (i.e. quartz peak strength/background strength) in an X-ray diffraction is 1.40 or more. An object of this invention is to obtain a sputtering target for a magnetic recording film capable of inhibiting the formation of cristobalites in the target which cause the generation of particles during sputtering, shortening the burn-in time, magnetically and finely separating the single-domain particles after deposition, and improving the recording density.

Claims

1. A sputtering target for a magnetic recording film containing SiO.sub.2, wherein a peak strength ratio of a (011) plane of quartz relative to a background strength in an X-ray diffraction is 1.40 or more.

2. The sputtering target for a magnetic recording film according to claim 1, wherein the sputtering target for a magnetic recording film contains Cr in an amount of 20 mol % or less (excluding 0 mol %), SiO.sub.2 in an amount of 1 mol % or more and 20 mol % or less, and remainder being Co.

3. The sputtering target for a magnetic recording film according to claim 1, wherein the sputtering target for a magnetic recording film contains Cr in an amount of 20 mol % or less (excluding 0 mol %), Pt in an amount of 1 mol % or more and 30 mol % or less, SiO.sub.2 in an amount of 1 mol % or more and 20 mol % or less, and remainder being Co.

4. The sputtering target for a magnetic recording film according to claim 1, wherein the sputtering target for a magnetic recording film contains Pt in an amount of 5 mol % or more and 60 mol % or less, SiO.sub.2 in an amount of 20 mol % or less, and remainder being Fe.

5. The sputtering target for a magnetic recording film according to claim 1, wherein the sputtering target for a magnetic recording film contains Pt in an amount of 5 mol % or more and 60 mol % or less, SiO.sub.2 in an amount of 20 mol % or less, and remainder being Co.

6. The sputtering target for a magnetic recording film according to claim 5, additionally containing, as an additive element, one or more elements selected from B, Ti, V, Mn, Zr, Nb, Ru, Mo, Ta, and W in an amount of 0.5 mol % or more and 10 mol % or less.

7. The sputtering target for a magnetic recording film according to claim 5, additionally containing, as an additive material, an inorganic material of one or more components selected from carbon, oxide excluding SiO.sub.2, nitride, and carbide.

8. The sputtering target according to claim 4, containing an additive element selected from the group consisting of B, Ti, V, Mn, Zr, Nb, Ru, Mo, Ta, and W in an amount of 0.5 to 10 mol %.

9. The sputtering target according to claim 4, containing an additive inorganic material selected from the group consisting of carbon, oxide excluding SiO.sub.2, nitride, and carbide.

10. The sputtering target according to claim 3, containing an additive element selected from the group consisting of B, Ti, V, Mn, Zr, Nb, Ru, Mo, Ta, and W in an amount of 0.5 to 10 mol %.

11. The sputtering target according to claim 3, containing an additive inorganic material selected from the group consisting of carbon, oxide excluding SiO.sub.2, nitride, and carbide.

12. The sputtering target according to claim 2, containing an additive element selected from the group consisting of B, Ti, V, Mn, Zr, Nb, Ru, Mo, Ta, and W in an amount of 0.5 to 10 mol %.

13. The sputtering target according to claim 2, containing an additive inorganic material selected from the group consisting of carbon, oxide excluding SiO.sub.2, nitride, and carbide.

14. The sputtering target according to claim 1, containing an additive element selected from the group consisting of B, Ti, V, Mn, Zr, Nb, Ru, Mo, Ta, and W in an amount of 0.5 to 10 mol %.

15. The sputtering target according to claim 1, containing an additive inorganic material selected from the group consisting of carbon, oxide excluding SiO.sub.2, nitride, and carbide.

16. A method of producing a sputtering target for a magnetic recording film, comprising the steps of using quartz as a powder raw material of SiO.sub.2, mixing the quartz powder raw material and magnetic metal powder raw material to form a powder mixture, and sintering the powder mixture at a temperature of 1300 C. or less to produce a sputtering target having a peak strength ratio of a (011) plane of quartz relative to a background strength in X-ray diffraction of 1.40 or more.

17. The method according to claim 16, wherein the sputtering target contains Cr in an amount that is greater than 0 mol % and equal to or less than 20 mol %, SiO.sub.2 in an amount of 1 to 20 mol %, and Co.

18. The method according to claim 16, wherein the sputtering target contains Cr in an amount that is greater than 0 mol % and equal to or less than 20 mol %, Pt in an amount of 1 to 30 mol %, SiO.sub.2 in an amount of 1 to 20 mol %, and Co.

19. The method according to claim 16, wherein the sputtering target contains Pt in an amount of 5 to 60 mol %, SiO.sub.2 in an amount of 20 mol % or less, and Fe.

20. The method according to claim 16, wherein the sputtering target contains Pt in an amount of 5 to 60 mol %, SiO.sub.2 in an amount of 20 mol % or less, and Co.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 is a structure photo of the target of Example 1 which uses quartz.

(2) FIG. 2 is a structure photo of the target of Comparative Example 1 which uses a cristobalite.

(3) FIG. 3 is a structure photo of the target of Comparative Example 2 in which amorphous SiO.sub.2 is formed into a cristobalite.

DETAILED DESCRIPTION OF THE INVENTION

(4) The sputtering target for a magnetic recording film is a sputtering target for a magnetic recording film containing SiO.sub.2, and uses quartz as the SiO.sub.2. It is thereby possible to obtain a sputtering target for a magnetic recording film in which a peak strength ratio of a (011) plane of quartz relative to a background strength (i.e. quartz peak strength/background strength) in an X-ray diffraction is 1.40 or more.

(5) Cristobalite, which is crystallized SiO.sub.2, will not exist, or can be considerably reduced. Note that the quartz peak strength is 26.64, and the calculation method of the background strength is (((average of 25.1 to 26.1)+(average of 27.1 to 28.1))/2).

(6) A compound material made of ferromagnetic alloy and non-magnetic inorganic substance is often used in a sputtering target for a magnetic recording film, and SiO.sub.2 is sometimes added as the inorganic substance.

(7) Nevertheless, when the SiO.sub.2 crystallizes in the target and exists as cristobalites, a sudden volume change will occur simultaneously with the foregoing phase transition, since the cristobalites have a phase transition point between a phase and phase near 270 C.

(8) When the sintered compact is cooled after the sintering process, or when processing the sintered compact, micro cracks will arise due to the volume change since the sintered compact will pass near 270 C. These micro cracks are considered to be the cause of particles during sputtering.

(9) Meanwhile, since quartz is not subject to a sudden volume change as with cristobalites (since quartz has no phase transition point), micro cracks will hardly occur. Hence, it is possible to reduce the generation of particles during sputtering.

(10) In addition, the density of quartz is higher than the density of amorphous SiO.sub.2 and cristobalites as described above, which enables to inject SiO.sub.2 in a greater amount of substance in the same volume. This is effective for magnetically separating the single-domain crystals after deposition.

(11) In other words, when SiO.sub.2 is sputtered, most of the SiO.sub.2 is once broken down into Si and O, and thereafter re-formed on the substrate. Here, the crystal structure after the reformation becomes amorphous without depending on the original crystal structure. Accordingly, high density quartz can discharge more Si and O with the same volume compared to amorphous SiO.sub.2 and cristobalites, and quartz is more advantageous in terms of the recording density of SiO.sub.2 after deposition.

(12) Thus, as a result of using quartz which causes the generation of crystallized cristobalite to be difficult, it is possible to increase the sintering temperature, and thereby improve the target density. Also, this is effective to improve the recording density since a greater amount of substance of SiO.sub.2 per unit volume can exist in the target.

(13) When referring to quartz as the sputtering target raw material, while it is known that quartz can be used as the material of SiO.sub.2, it could be said that there was no reason to use quartz powder unless there was some kind of special reason since amorphous SiO.sub.2 powder is a material that can be easily obtained as fine powder.

(14) Nevertheless, as a result of using quartz powder, it is possible to increase the sintering temperature and, consequently, improve the sintering density. By way of reference, the density of amorphous SiO.sub.2 is 2.2 g/cm.sup.3, the density of cristobalite is 2.33 g/cm.sup.3, and the density of quartz is 2.65 g/cm.sup.3, and the quartz itself is of high density. In order to increase the abundance ratio of quartz means to reduce the abundance ratio of amorphous SiO.sub.2 and cristobalites. Moreover, since cristobalites will not be generated easily when quartz is sintered at a high temperature compared to amorphous SiO.sub.2, the use of quartz is effective for improving the density of the sintered compact (target).

(15) As described above, while there is no particular limitation in the magnetic material as the sputtering target for a magnetic recording film, preferably used is: (A) a sputtering target for a magnetic recording film containing Cr in an amount of 20 mol % or less (excluding 0 mol %), SiO.sub.2 in an amount of 1 mol % or more and 20 mol % or less, and remainder being Co, (B) a sputtering target for a magnetic recording film containing Cr in an amount of 20 mol % or less (excluding 0 mol %), Pt in an amount of 1 mol % or more and 30 mol % or less, SiO.sub.2 in an amount of 1 mol % or more and 20 mol % or less, and remainder being Co, (C) a sputtering target for a magnetic recording film containing Pt in an amount of 5 mol % or more and 60 mol % or less, SiO.sub.2 in an amount of 20 mol % or less, and remainder being Fe, or (D) a sputtering target for a magnetic recording film containing Pt in an amount of 5 mol % or more and 60 mol % or less, SiO.sub.2 in an amount of 20 mol % or less, and remainder being Co.

(16) Note that the foregoing indication of excluding 0 mol % means that the effect can be yielded even with the addition of trace amounts of that element; and 0 is excluded so as long as the addition of that element is the object. Meanwhile, in the case of the PtCoSiO.sub.2-based target, it means that the existence of Cr is not required.

(17) These are components which are required as the magnetic recording medium, and, although the blending ratio may be variously changed within the foregoing range, they are able to maintain characteristics as an effective magnetic recording medium.

(18) In the foregoing cases also, the SiO.sub.2 needs to exist as quartz in the target without becoming crystallized and existing as cristobalites.

(19) Note that, in (A) above, Cr is added as an essential component, and the amount excludes 0 mol %. In other words, the amount of Cr to be included needs to be at least an analyzable lower limit or higher. If the Cr amount is 20 mol % or less, an effect can be yielded even in cases where trace amounts are added. The present invention covers all of the foregoing aspects. These elements are components that are required as a magnetic recording medium, and while the blending ratio may vary within the foregoing range, all of these components are able to maintain the characteristics as an effective magnetic recording medium.

(20) Note that, in (B) above, Cr is added in an amount of 20 mol % or less, but the amount excludes 0 mol %. Moreover, when Pt is added in an amount of 1 mol % or more and 30 mol % or less, an effect is yielded even in cases of adding trace amounts of that element. The present invention covers all of the foregoing aspects. These elements are components that are required as a magnetic recording medium, and, while the blending ratio may be variously changed within the foregoing range, all blending ratios are able to maintain the characteristics as an effective magnetic recording medium.

(21) In addition, (C) above is a sputtering target for a magnetic recording film having FePt alloy as its main component, and this sputtering target also exhibits similar effects.

(22) Also effective is the foregoing sputtering target for a magnetic recording film containing, as an additive element, one or more elements selected from B, Ti, V, Mn, Zr, Nb, Ru, Mo, Ta, and W in an amount of 0.5 mol % or more and 10 mol % or less. The additive element is an element that is added as needed in order to improve the characteristics as a magnetic recording medium.

(23) Further, also effective is the foregoing sputtering target for a magnetic recording film containing, as an additive element, an inorganic material of one or more components selected from carbon, oxide excluding SiO.sub.2, nitride, and carbide.

(24) Upon producing this kind of sputtering target for a magnetic recording film, it is effective to use quartz as the powder raw material of SiO.sub.2. The quartz powder raw material and magnetic metal powder raw material are mixed, and sintered at a sintering temperature of 1300 C. or less. This high sintering temperature is enabled by the use of high density quartz, and this is effective in improving the target density.

(25) While a specific example of the production method is now explained, this production method is merely a representative and preferred example. In other words, the present invention is not limited to the following production method, and it should be easy to understand that other production methods may also be adopted so as long as they are able to achieve the object and conditions of the present invention.

(26) The ferromagnetic material sputtering target of the present invention can be manufactured with powder metallurgy. Foremost, powders of the respective metal elements, quartz powder, and powders of the additive metal elements are prepared as needed. Desirably, the maximum particle size of these powders is 20 m or less.

(27) Moreover, the alloy powders of these metals may also be prepared in substitute for the powders of the respective metal elements, and, desirably, the maximum particle size is also 20 m or less in the foregoing case.

(28) Meanwhile, if the particle size is too small, there is a problem in that oxidation is promoted and the component composition will not fall within the intended range. Thus, desirably, the particle size is 0.1 m or more.

(29) Then, these raw material powders are weighed to obtain the intended composition, mixed and pulverized with well-known methods by using a ball mill or the like. Inorganic powder should be added to the metal powders at this stage if needed.

(30) Carbon powder, oxide powder other than SiO.sub.2, nitride powder or carbide powder is prepared as the inorganic powder, and, desirably, the maximum particle size of the inorganic powder is 5 m or less. Meanwhile, if the particle size is too small, the powders become clumped together, and the particle size is therefore desirably 0.1 m or more.

(31) As the mixer, a planetary mixer or a planetary agitator/mixer is preferably used. In addition, mixing is preferably performed in an inert gas atmosphere or a vacuum in consideration of the problem of oxidation in the mixing process.

(32) By molding and sintering the powder obtained as described above using a vacuum hot press device, and cutting it into an intended shape, it is possible to produce the ferromagnetic material sputtering target of the present invention. Here, as described above, sintering is performed at a sintering temperature of 1300 C. or less. This high sintering temperature is a temperature that is required for inhibiting the deterioration of the sintering density.

(33) Moreover, the molding and sintering processes are not limited to the hot press method, and a plasma discharge sintering method or a hot isostatic sintering method may also be used. The holding temperature during the sintering process is preferably set to the lowest temperature within the temperature range in which the target can be sufficiently densified. Although this will depend on the composition of the target, in many cases a temperature range of 1100 to 1300 C. is preferable.

EXAMPLES

(34) The present invention is now explained in detail with reference to the Examples and Comparative Examples. Note that these Examples are merely illustrative and the present invention shall in no way be limited thereby. In other words, various modifications and other embodiments are covered by the present invention, and the present invention is limited only by the scope of its claims.

Example 1

(35) In Example 1, as the raw material powders, Co powder having an average grain size of 3 m, Cr powder having an average grain size of 5 m, and quartz powder (SiO.sub.2 powder) having an average grain size of 1 m were prepared. These powders were weighed at the weight percentage of Co powder 81.42 wt %, Cr powder 10.72 wt %, and SiO.sub.2 powder 7.84 wt % to achieve a target composition of 80.4 Co-12 Cr-7.6 SiO.sub.2 (mol %).

(36) Subsequently, the Co powder, Cr powder and quartz (SiO.sub.2) powder were placed in a ball mill pot with a capacity of 10 liters together with zirconia balls as the grinding medium, and rotated and mixed for 20 hours.

(37) This mixed powder was filled in a carbon mold, and hot pressed in a vacuum atmosphere under the conditions of temperature of 1160 C., holding time of 120 minutes, and pressure of 30 MPa to obtain a sintered compact. This was further processed with a lathe to obtain a disk-shaped target having a diameter of 180 mm and thickness of 5 mm. The structure photo of this target is shown in FIG. 1.

(38) The peak strength of quartz was measured by cutting out a part of the target and performing measurement based on the X-ray diffraction method. The results are shown in Table 1.

(39) The peak strength appearing at 20:26.64 was 404, and the background strength (((average value of strength of 25.1 to 26.1)+(average value of strength of 27.1 to) 28.1)+2) was also measured.

(40) The peak strength ratio of the quartz of the (011) plane relative to the background strength, i.e. quartz peak strength/background strength, was 10.98. Note that the measuring device was Ultima IV manufactured by Rigaku, and the measuring conditions were as follows: tube voltage of 40 kv, tube current of 30 mA, scan speed of 4/min, and step of 0.02.

(41) TABLE-US-00001 TABLE 1 Hot Press Quartz Composition Composition Temper- (011) Burn- Parti- Ratio Ratio ature 26.64 Strength in cle Composition (mol %) (wt %) ( C.) Strength Ratio (kWh) Count Example 1 CoCrSiO.sub.2 80.4-12-7.6 81.42-10.72-7.84 1160 404 10.98 0.25 1.2 Example 2 CoCrPtSiO.sub.2 67-12-15-6 50.24-7.94-37.23-4.59 1160 385 9.51 0.34 1.1 Example 3 FePtSiO.sub.2 41-41-18 20.14-70.35-9.51 1200 506 12.56 0.33 1.3 Comparative CoCrSiO.sub.2 80.4-12-7.6 81.42-10.72-7.84 1160 11 1.27 3.1 31 Example 1 (Cristobalites) Comparative CoCrSiO.sub.2 (Cristobalites 80.4-12-7.6 81.42-10.72-7.84 1160 11 1.23 1.76 20 Example 2 formed during sintering) Comparative CoCrSiO.sub.2 80.4-12-7.6 81.42-10.72-7.84 1100 11 1.24 0.48 2.9 Example 3 (Amorphous SiO.sub.2) Comparative CoCrPtSiO.sub.2 (Cristobalites 67-12-15-6 50.24-7.94-37.23-4.59 1160 10 1.23 1.54 23 Example 4 formed during sintering) Comparative FePtSiO.sub.2 (Cristobalites 41-41-18 20.14-70.35-9.51 1200 12 1.28 2.14 25 Example 5 formed during sintering) Example 4 CoPtSiO.sub.2 80-12-8 62.56-31.06-6.38 1160 413 11.21 0.31 1.1 Comparative CoPtSiO.sub.2 (Cristobalites 80-12-8 62.56-31.06-6.38 1160 11 1.24 1.37 24 Example 6 formed during sintering) Example 5 CoCrPtTiO.sub.2SiO.sub.2Cr.sub.2O.sub.3 69-10-12-3-3- 52.11-6.66-30.00-3.07- 1160 152 4.13 0.31 1.2 3 2.31-5.84 Comparative CoCrPtTiO.sub.2SiO.sub.2Cr.sub.2O.sub.3 69-10-12-3-3- 52.11-6.66-30.00-3.07- 1160 11 1.23 1.38 18 Example 7 (Cristobalites formed during 3 2.31-5.84 sintering) Example 6 CoCrPtRuTiO.sub.2SiO.sub.2Cr.sub.2O.sub.3 69-5-15-2-3- 48.81-3.12-35.13-2.43- 1160 148 4.05 0.33 1.3 3-3 2.88-2.16-5.47 Comparative CoCrPtRuTiO.sub.2SiO.sub.2Cr.sub.2O.sub.3 69-5-15-2-3- 48.81-3.12-35.13-2.43- 1160 12 1.29 1.45 19 Example 8 (Cristobalites formed during 3-3 2.88-2.16-5.47 sintering) Example 7 CoCrPtBSiO.sub.2 62-18-10-3- 52.24-13.38-27.89-0.46- 900 377 10.24 0.26 1.2 7 6.01 Comparative CoCrPtBSiO.sub.2 62-18-10-3- 52.24-13.38-27.89-0.46- 900 12 1.28 0.47 3.1 Example 9 (Amorphous SiO.sub.2) 7 6.01 Example 8 CoCrPtSiO.sub.2 72-12-15-1 54.03-7.94-37.26-0.77 1160 53 1.44 0.31 1.1 Comparative CoCrPtSiO.sub.2 72-12-15-1 54.03-7.94-37.26-0.77 1160 10 1.22 1.02 10.2 Example 10 Example 9 FePtSiO.sub.2C 43-43-9-5 21.51-73.64-4.75-0.53 1200 358 8.76 0.43 9.8 Comparative FePtSiO.sub.2C (Cristobalites 43-43-9-5 21.51-73.64-4.75-0.53 1200 11 1.23 2.06 31 Example 11 formed during sintering)

(42) The results upon sputtering this target are shown in Table 1. The number of particles that were generated in a stationary state was 1.2. Upon measuring the number of particles in a stationary state, the deposition thickness was caused to roughly 20 times the film thickness of HDD products for a better view of the particles.

(43) Moreover, the burn-in life of sputtering was 0.25 kWh. Thus, when the peak strength ratio of the quartz of the (011) plane is high, it was possible to shorten the burn-in time and reduce the number of particles that are generated.

(44) The occupancy of SiO.sub.2 in the target is shown in Table 2. This is the rate of SiO.sub.2 occupancy calculated from the structure photo upon preparing the target. As shown in Table 2, the result was 23.57% in Example 1 and showed a favorable value. The smaller the value in Table 2 is, the greater the amount of SiO.sub.2 can be injected within the same volume.

(45) The higher the occupancy of SiO.sub.2 in the target is, the more the generation of particles occurs. Thus, the use of high density quartz is advantageous in terms of particles. To put it differently, the lower the occupancy of SiO.sub.2 in the case of the same amount of substance, it could be said that the density of the SiO.sub.2 itself is high. This point is also evident from the comparison with Comparative Example 1 and Comparative Example 2 below.

(46) TABLE-US-00002 TABLE 2 Occupancy of SiO.sub.2 calculated from structure photo Composition ratio (mol %) upon producing the target Comparative 80.4Co12Cr7.6SiO.sub.2 25.61% Example 1 Cristobalite Comparative 80.4Co12Cr7.6SiO.sub.2 28.21% Example 2 Cristobalite formed during sintering Comparative 67Co12Cr15Pt6SiO.sub.2 22.5% Example 4 Cristobalite formed during sintering Comparative 41Fe41Pt18SiO.sub.2 42.53% Example 5 Cristobalite formed during sintering Example 1 80.4Co12Cr7.6SiO.sub.2 23.57% Quartz Example 2 67Co12Cr15Pt6SiO.sub.2 20.38% Quartz Example 3 41Fe41Pt18SiO.sub.2 39.10% Quartz

Example 2

(47) In Example 2, as the raw material powders, Co powder having an average grain size of 3 m, Cr powder having an average grain size of 5 m, Pt powder having an average grain size of 1 m, and quartz powder (SiO.sub.2 powder) having an average grain size of 1 m were prepared. These powders were weighed at the weight percentage of Co powder 50.24 wt %, Cr powder 7.94 wt %, Pt powder 37.23 wt %, and SiO.sub.2 powder 4.59 wt % to achieve a target composition of 67 Co-12 Cr-15 Pt-6 SiO.sub.2 (mol %).

(48) This mixed powder was filled in a carbon mold, and hot pressed in a vacuum atmosphere under the conditions of: temperature of 1160 C., holding time of 120 minutes, and pressure of 30 MPa to obtain a sintered compact. This was further processed with a lathe to obtain a disk-shaped target having a diameter of 180 mm and thickness of 5 mm.

(49) The peak strength of quartz was measured by cutting out a part of the target and performing measurement based on the X-ray diffraction method. The results are shown in Table 1.

(50) The peak strength appearing at 20:26.64 was 385, and the background strength (((average value of strength of 25.1 to 26.1)+(average value of strength of 27.1 to) 28.1)2) was also measured.

(51) The peak strength ratio of the quartz of the (011) plane relative to the background strength, i.e. quartz peak strength/background strength, was 9.51. The measuring device was Ultima IV by Rigaku, and the conditions were as follows: tube voltage of 40 kv, tube current of 30 mA, scan speed of 4/min, and step of 0.02.

(52) The results upon sputtering this target are shown in Table 1. The number of particles that were generated in a stationary state was 1.1. Upon measuring the number of particles in a stationary state, the deposition thickness was caused to roughly 20 times the film thickness of HDD products for a better view of the particles.

(53) Moreover, the burn-in life of sputtering was 0.34 kWh. Thus, when the peak strength ratio of the quartz of the (011) plane is high, it was possible to shorten the burn-in time and reduce the number of particles that are generated.

(54) The occupancy of SiO.sub.2 in the target is shown in Table 2. This is the rate of SiO.sub.2 occupancy calculated from the structure photo upon preparing the target. As shown in Table 2, the SiO.sub.2 occupancy was 20.38% in Example 2 and showed a favorable value. The smaller the value shown in Table 2 is, the greater the amount of SiO.sub.2 can be injected within the same volume.

(55) The higher the occupancy of SiO.sub.2 in the target is, the more the generation of particles occurs. Thus, the use of high density quartz is advantageous in terms of particles. To put it differently, the lower the occupancy of SiO.sub.2 in the case of the same amount of substance, it could be said that the density of the SiO.sub.2 itself is high. This point is also evident from the comparison with Comparative Example 4 below.

Example 3

(56) In Example 3, as the raw material powders, Fe powder having an average grain size of 5 m, Pt powder having an average grain size of 1 m, and quartz powder (SiO.sub.2 powder) having an average grain size of 1 m were prepared. These powders were weighed at the weight percentage of Fe powder 20.14 wt %, Pt powder 70.35 wt %, and SiO.sub.2 powder 9.51 wt % to achieve a target composition of 41 Fe-41 Pt-18 SiO.sub.2 (mol %).

(57) This mixed powder was filled in a carbon mold, and hot pressed in a vacuum atmosphere under the conditions of temperature of 1200 C., holding time of 120 minutes, and pressure of 30 MPa to obtain a sintered compact. This was further processed with a lathe to obtain a disk-shaped target having a diameter of 180 mm and thickness of 5 mm.

(58) The peak strength of quartz was measured by cutting out a part of the target and performing measurement based on the X-ray diffraction method. The results are shown in Table 1.

(59) The peak strength appearing at 20:26.64 was 506, and the background strength (((average value of strength of 25.1 to 26.1)+(average value of strength of 27.1 to) 28.1)2) was also measured.

(60) The peak strength ratio of the quartz of the (011) plane relative to the background strength, i.e. quartz peak strength/background strength, was 12.56. The measuring device was Ultima IV by Rigaku, and the conditions were as follows: tube voltage of 40 kv, tube current of 30 mA, scan speed of 4/min, and step of 0.02.

(61) The results upon sputtering this target are shown in Table 1. The number of particles that were generated in a stationary state was 1.3. Upon measuring the number of particles in a stationary state, the deposition thickness was caused to roughly 20 times the film thickness of HDD products for a better view of the particles.

(62) Moreover, the burn-in life of sputtering was 0.33 kWh. Thus, when the peak strength ratio of the quartz of the (011) plane is high, it was possible to shorten the burn-in time and reduce the number of particles that are generated.

(63) The occupancy of SiO.sub.2 in the target is shown in Table 2. This is the rate of SiO.sub.2 occupancy calculated from the structure photo upon preparing the target. As shown in Table 2, the SiO.sub.2 occupancy was 39.10% in Example 3 and showed a favorable value compared to a target of the same composition. The smaller the value shown in Table 2 is, the greater the amount of SiO.sub.2 can be injected within the same volume.

(64) The higher the occupancy of SiO.sub.2 in the target is, the more the generation of particles occurs. Thus, the use of high density quartz is advantageous in terms of particles. To put it differently, the lower the occupancy of SiO.sub.2 in the case of the same amount of substance, it could be said that the density of the SiO.sub.2 itself is high. This point is also evident from the comparison with Comparative Example 5 below.

Comparative Example 1

(65) In Comparative Example 1, as the raw material powders, Co powder having an average grain size of 3 m, Cr powder having an average grain size of 5 m, and crystalline SiO.sub.2 powder (cristobalite powder) having an average grain size of 1 m were prepared. These powders were weighed at the weight percentage of Co powder 81.42 wt %, Cr powder 10.72 wt %, and SiO.sub.2 powder 7.84 wt % to achieve a target composition of 80.4 Co-12 Cr-7.6 SiO.sub.2 (mol %).

(66) Next, these powders were placed in a ball mill pot with a capacity of 10 liters together with zirconia balls as the grinding medium, and rotated and mixed for 20 hours.

(67) Then, this mixed powder was filled in a carbon mold, and hot pressed in a vacuum atmosphere under the conditions of temperature of 1160 C., holding time of 120 minutes, and pressure of 30 MPa to obtain a sintered compact.

(68) This was further processed with a lathe to obtain a disk-shaped target having a diameter of 180 mm and thickness of 5 mm. The structure photo of this target is shown in FIG. 2, and numerous SiO.sub.2 subject to grain growth can be observed.

(69) As with Example 1, the peak strength of the (011) plane of the quartz was measured by cutting out a part of the target and performing measurement based on the X-ray diffraction method. In other words, the peak strength appearing at 20:26.64 and the background strength (((average value of strength of 25.1 to 26.1)+(average value of strength of 27.1 to) 28.1)2) were measured.

(70) Consequently, the peak strength appearing at 2:26.64 was 11, and the peak strength ratio of the (011) plane of the quartz relative to the background strength, i.e. quartz peak strength/background strength, was 1.27.

(71) These were both smaller compared to Example 1. The results are shown in Table 1. Here, the measuring device and conditions were the same as Example 1.

(72) As a result of sputtering this target, the number of particles that were generated in a stationary state increased to 31. Moreover, the burn-in life of sputtering was 3.1 kWh, and the burn-in time increased. Thus, when the peak strength ratio of the (011) plane of the quartz decreased, the burn-in time of sputtering increased, and the number of particles that are generated during sputtering also increased. The results are shown in Table 1.

(73) The occupancy of SiO.sub.2 in the target is shown in Table 2. This is the rate of SiO.sub.2 occupancy calculated from the structure photo upon preparing the target. The result shown in Table 2 was 25.61%. The value is greater compared to the Examples.

(74) When the value shown in Table 2 is great, it is not possible to inject a greater amount of SiO.sub.2 within the same volume. The higher the occupancy of SiO.sub.2 in the target is, the more the generation of particles occurs. Thus, the use of high density quartz is advantageous in terms of particles, but the opposite result was obtained in this Comparative Example. To put it differently, since the SiO.sub.2 occupancy is great in the same amount of substance, the SiO.sub.2 density had deteriorated by that much.

Comparative Example 2

(75) In Comparative Example 2, as the raw material powders, Co powder having an average grain size of 3 m, Cr powder having an average grain size of 5 m, and SiO.sub.2 powder (amorphous SiO.sub.2 powder) having an average grain size of 1 m were prepared. These powders were weighed at the weight percentage of Co powder 81.42 wt %, Cr powder 10.72 wt %, and SiO.sub.2 powder 7.84 wt % to achieve a target composition of 80.4 Co-12 Cr-7.6 SiO.sub.2 (mol %).

(76) Next, these powders were placed in a ball mill pot with a capacity of 10 liters together with zirconia balls as the grinding medium, and rotated and mixed for 20 hours.

(77) Then, this mixed powder was filled in a carbon mold, and hot pressed in a vacuum atmosphere under the conditions of temperature of 1160 C., holding time of 120 minutes, and pressure of 30 MPa to obtain a sintered compact.

(78) This was further processed with a lathe to obtain a disk-shaped target having a diameter of 180 mm and thickness of 5 mm. Note that, in the foregoing production process, the amorphous SiO.sub.2 was formed into cristobalites. The structure photo of this target is shown in FIG. 3. In FIG. 3, some SiO.sub.2 subject to grain growth can be observed.

(79) As with Example 1, the peak strength of the (011) plane of the quartz was measured by cutting out a part of the target and performing measurement based on the X-ray diffraction method. In other words, the peak strength appearing at 20:26.64 and the background strength (((average value of strength of 25.1 to 26.1)+(average value of strength of 27.1 to) 28.1)2) were measured.

(80) Consequently, the peak strength appearing at 20:26.64 was 11, and the peak strength ratio of the (011) plane of the quartz relative to the background strength, i.e. quartz peak strength/background strength, was 1.23.

(81) These were both smaller compared to Example 1. The results are shown in Table 1. Here, the measuring device and conditions were the same as Example 1.

(82) As a result of sputtering this target, the number of particles that were generated in a stationary state increased to 20. Moreover, the burn-in life of sputtering was 1.76 kWh, and the burn-in time increased. Thus, when the peak strength ratio of the (011) plane of the quartz decreased, the burn-in time of sputtering increased, and the number of particles that are generated during sputtering also increased. The results are shown in Table 1.

(83) The occupancy of SiO.sub.2 in the target is shown in Table 2. This is the rate of SiO.sub.2 occupancy calculated from the structure photo upon preparing the target. As shown in Table 2, the result was 28.21%, and this value is greater compared to the Examples.

(84) In Table 2, the smaller the value upon comparing the same compositions, it is not possible to inject a greater amount of SiO.sub.2 within the same volume. The higher the occupancy of SiO.sub.2 in the target is, the more the generation of particles occurs. Thus, while the use of high density quartz is advantageous in terms of particles, the opposite result was obtained in Comparative Example 2. To put it differently, since the SiO.sub.2 occupancy is great in the same amount of substance, the SiO.sub.2 density had deteriorated by that much.

Comparative Example 3

(85) In Comparative Example 3, as the raw material powders, Co powder having an average grain size of 3 m, Cr powder having an average grain size of 5 m, and SiO.sub.2 powder (amorphous SiO.sub.2 powder) having an average grain size of 1 m were prepared. These powders were weighed at the weight percentage of Co powder 81.42 wt %, Cr powder 10.72 wt %, and SiO.sub.2 powder 7.84 wt % to achieve a target composition of 80.4 Co-12 Cr-7.6 SiO.sub.2 (mol %).

(86) Next, these powders were placed in a ball mill pot with a capacity of 10 liters together with zirconia balls as the grinding medium, and rotated and mixed for 20 hours.

(87) Then, this mixed powder was filled in a carbon mold, and hot pressed in a vacuum atmosphere under the conditions of temperature of 1100 C., holding time of 120 minutes, and pressure of 30 MPa to obtain a sintered compact.

(88) This was further processed with a lathe to obtain a disk-shaped target having a diameter of 180 mm and thickness of 5 mm. With the structure of this target, some SiO.sub.2 subject to grain growth can be observed.

(89) As with Example 1, the peak strength of the (011) plane of the quartz was measured by cutting out a part of the target and performing measurement based on the X-ray diffraction method. In other words, the peak strength appearing at 20:26.64 and the background strength (((average value of strength of 25.1 to 26.1)+(average value of strength of 27.1 to) 28.1)2) were measured.

(90) Consequently, the peak strength appearing at 20:26.64 was 11, and the peak strength ratio of the (011) plane of the quartz relative to the background strength, i.e. quartz peak strength/background strength, was 1.24.

(91) These were both smaller compared to Example 1. The results are shown in Table 1. Here, the measuring device and conditions were the same as Example 1.

(92) As a result of sputtering this target, the number of particles that were generated in a stationary state increased to 2.9. Moreover, the burn-in life of sputtering was 0.48 kWh, and the burn-in time increased. Thus, when the peak strength ratio of the (011) plane of the quartz decreased, the burn-in time of sputtering increased, and the number of particles that are generated during sputtering also increased. The results are shown in Table. 1.

Comparative Example 4

(93) In Comparative Example 4, as the raw material powders, Co powder having an average grain size of 3 m, Cr powder having an average grain size of 5 m, Pt powder having an average grain size of 1 m, and SiO.sub.2 powder (amorphous SiO.sub.2 powder) having an average grain size of 1 m were prepared. These powders were weighed at the weight percentage of Co powder 50.24 wt %, Cr powder 7.94 wt %, Pt powder 37.23 wt %, and SiO.sub.2 powder 4.59 wt % to achieve a target composition of 67 Co-12 Cr-15 Pt-6 SiO.sub.2 (mol %).

(94) Next, these powders were placed in a ball mill pot with a capacity of 10 liters together with zirconia balls as the grinding medium, and rotated and mixed for 20 hours.

(95) Then, this mixed powder was filled in a carbon mold, and hot pressed in a vacuum atmosphere under the conditions of temperature of 1160 C., holding time of 120 minutes, and pressure of 30 MPa to obtain a sintered compact.

(96) This was further processed with a lathe to obtain a disk-shaped target having a diameter of 180 mm and thickness of 5 mm. Note that, in the foregoing production process, the amorphous SiO.sub.2 was formed into cristobalites. With the structure of this target, some SiO.sub.2 subject to grain growth can be observed.

(97) As with Example 1, the peak strength of the (011) plane of the quartz was measured by cutting out a part of the target and performing measurement based on the X-ray diffraction method. In other words, the peak strength appearing at 20:26.64 and the background strength (((average value of strength of 25.1 to 26.1)+(average value of strength of 27.1 to) 28.1)2) were measured.

(98) Consequently, the peak strength appearing at 20:26.64 was 10, and the peak strength ratio of the (011) plane of the quartz relative to the background strength, i.e. quartz peak strength/background strength, was 1.23.

(99) These were both smaller compared to Example 2. The results are shown in Table 1. Here, the measuring device and conditions were the same as Example 1.

(100) As a result of sputtering this target, the number of particles that were generated in a stationary state increased to 23. Moreover, the burn-in life of sputtering was 1.54 kWh, and the burn-in time increased. Thus, when the peak strength ratio of the (011) plane of the quartz decreased, the burn-in time of sputtering increased, and the number of particles that are generated during sputtering also increased. The results are shown in Table 1.

Comparative Example 5

(101) In Comparative Example 5, as the raw material powders, Fe powder having an average grain size of 5 m, Pt powder having an average grain size of 1 m, and SiO.sub.2 powder (amorphous SiO.sub.2 powder) having an average grain size of 1 m were prepared. These powders were weighed at the weight percentage of Fe powder 20.14 wt %, Pt powder 70.35 wt %, and SiO.sub.2 powder 9.51 wt % to achieve a target composition of 41 Fe-41 Pt-18 SiO.sub.2 (mol %).

(102) Next, these powders were placed in a ball mill pot with a capacity of 10 liters together with zirconia balls as the grinding medium, and rotated and mixed for 20 hours.

(103) Then, this mixed powder was filled in a carbon mold, and hot pressed in a vacuum atmosphere under the conditions of temperature of 1200 C., holding time of 120 minutes, and pressure of 30 MPa to obtain a sintered compact.

(104) This was further processed with a lathe to obtain a disk-shaped target having a diameter of 180 mm and thickness of 5 mm. Note that, in the foregoing production process, the amorphous SiO.sub.2 was formed into cristobalites. With the structure of this target, some SiO.sub.2 subject to grain growth can be observed.

(105) As with Example 1, the peak strength of the (011) plane of the quartz was measured by cutting out a part of the target and performing measurement based on the X-ray diffraction method. In other words, the peak strength appearing at 20:26.64 and the background strength (((average value of strength of 25.1 to 26.1)+(average value of strength of 27.1 to) 28.1)2) were measured.

(106) Consequently, the peak strength appearing at 20:26.64 was 12, and the peak strength ratio of the (011) plane of the quartz relative to the background strength, i.e. quartz peak strength/background strength, was 1.28.

(107) These were both smaller compared to Example 3. The results are shown in Table 1. Here, the measuring device and conditions were the same as Example 1.

(108) As a result of sputtering this target, the number of particles that were generated in a stationary state increased to 25. Moreover, the burn-in life of sputtering was 2.14 kWh, and the burn-in time increased. Thus, when the peak strength ratio of the (011) plane of the quartz decreased, the burn-in time of sputtering increased, and the number of particles that are generated during sputtering also increased. The results are shown in Table 1.

Example 4

(109) In Example 4, as the raw material powders, Co powder having an average grain size of 3 m, Pt powder having an average grain size of 1 m, and quartz powder (SiO.sub.2 powder) having an average grain size of 1 m were prepared. These powders were weighed at the weight percentage of Co powder 62.56 wt %, Pt powder 31.06 wt %, and SiO.sub.2 powder 6.38 wt % to achieve a target composition of 80 Co-12 Pt-8 SiO.sub.2 (mol %).

(110) This mixed powder was filled in a carbon mold, and hot pressed in a vacuum atmosphere under the conditions of temperature of 1160 C., holding time of 120 minutes, and pressure of 30 MPa to obtain a sintered compact. This was further processed with a lathe to obtain a disk-shaped target having a diameter of 180 mm and thickness of 5 mm.

(111) The peak strength of quartz was measured by cutting out a part of the target and performing measurement based on the X-ray diffraction method. The results are shown in Table 1.

(112) The peak strength appearing at 2:26.64 was 413, and the background strength (((average value of strength of 25.1 to 26.1)+(average value of strength of 27.1 to) 28.1)2) was also measured.

(113) The peak strength ratio of the quartz of the (011) plane relative to the background strength, i.e. quartz peak strength/background strength, was 11.21. The measuring device was Ultima IV by Rigaku, and the conditions were as follows: tube voltage of 40 kv, tube current of 30 mA, scan speed of 4/min, and step of 0.02.

(114) The results upon sputtering this target are shown in Table 1. The number of particles that were generated in a stationary state was 1.1. Upon measuring the number of particles in a stationary state, the deposition thickness was caused to roughly 20 times the film thickness of HDD products for a better view of the particles.

(115) Moreover, the burn-in life of sputtering was 0.31 kWh. Thus, when the peak strength ratio of the quartz of the (011) plane is high, it was possible to shorten the burn-in time and reduce the number of particles that are generated.

Comparative Example 6

(116) In Comparative Example 6, as the raw material powders, Co powder having an average grain size of 3 m, Pt powder having an average grain size of 1 m, and SiO.sub.2 powder (amorphous SiO.sub.2 powder) having an average grain size of 1 m were prepared. These powders were weighed at the weight percentage of Co powder 62.56 wt %, Pt powder 31.06 wt %, and SiO.sub.2 powder 6.38 wt % to achieve a target composition of 80 Co-12 Pt-8 SiO.sub.2 (mol %).

(117) Next, these powders were placed in a ball mill pot with a capacity of 10 liters together with zirconia balls as the grinding medium, and rotated and mixed for 20 hours.

(118) Then, this mixed powder was filled in a carbon mold, and hot pressed in a vacuum atmosphere under the conditions of temperature of 1160 C., holding time of 120 minutes, and pressure of 30 MPa to obtain a sintered compact.

(119) This was further processed with a lathe to obtain a disk-shaped target having a diameter of 180 mm and thickness of 5 mm. Note that, in the foregoing production process, the amorphous SiO.sub.2 was formed into cristobalites. With the structure photo of this target, some SiO.sub.2 subject to grain growth can be observed.

(120) As with Example 1, the peak strength of the (011) plane of the quartz was measured by cutting out a part of the target and performing measurement based on the X-ray diffraction method. In other words, the peak strength appearing at 20:26.64 and the background strength (((average value of strength of 25.1 to 26.1)+(average value of strength of 27.1 to) 28.1)2) were measured.

(121) Consequently, the peak strength appearing at 20:26.64 was 11, and the peak strength ratio of the (011) plane of the quartz relative to the background strength, i.e. quartz peak strength/background strength, was 1.24.

(122) These were both smaller compared to Example 4. The results are shown in Table 1. Here, the measuring device and conditions were the same as Example 1.

(123) As a result of sputtering this target, the number of particles that were generated in a stationary state increased to 24. Moreover, the burn-in life of sputtering was 1.37 kWh, and the burn-in time increased. Thus, when the peak strength ratio of the (011) plane of the quartz decreased, the burn-in time of sputtering increased, and the number of particles that are generated during sputtering also increased. The results are shown in Table 1.

Example 5

(124) In Example 5, as the raw material powders, Co powder having an average grain size of 3 m, Cr powder having an average grain size of 5 m, Pt powder having an average grain size of 1 m, TiO.sub.2 powder having an average grain size of 1 m, quartz powder (SiO.sub.2 powder) having an average grain size of 1 m, and Cr.sub.2O.sub.3 powder having an average grain size of 1 m were prepared. These powders were weighed at the weight percentage of Co powder 52.11 wt %, Cr powder 6.66 wt %, Pt powder 30.00 wt %, TiO.sub.2 powder 3.07 wt %, SiO.sub.2 powder 2.31 wt %, and Cr.sub.2O.sub.3 powder 5.84 wt % to achieve a target composition of 69 Co-10 Cr-12 Pt-3 TiO.sub.2-3 SiO.sub.2-3 Cr.sub.2O.sub.3 (mol %).

(125) This mixed powder was filled in a carbon mold, and hot pressed in a vacuum atmosphere under the conditions of temperature of 1160 C., holding time of 120 minutes, and pressure of 30 MPa to obtain a sintered compact. This was further processed with a lathe to obtain a disk-shaped target having a diameter of 180 mm and thickness of 5 mm.

(126) The peak strength of quartz was measured by cutting out a part of the target and performing measurement based on the X-ray diffraction method. The results are shown in Table 1.

(127) The peak strength appearing at 20:26.64 was 152, and the background strength (((average value of strength of 25.1 to 26.1)+(average value of strength of 27.1 to) 28.1)2) was also measured.

(128) The peak strength ratio of the quartz of the (011) plane relative to the background strength, i.e. quartz peak strength/background strength, was 4.13. The measuring device was Ultima IV by Rigaku, and the conditions were as follows: tube voltage of 40 kv, tube current of 30 mA, scan speed of 4/min, and step of 0.02.

(129) The results upon sputtering this target are shown in Table 1. The number of particles that were generated in a stationary state was 1.2. Upon measuring the number of particles in a stationary state, the deposition thickness was caused to roughly 20 times the film thickness of HDD products for a better view of the particles.

(130) Moreover, the burn-in life of sputtering was 0.31 kWh. Thus, when the peak strength ratio of the quartz of the (011) plane is high, it was possible to shorten the burn-in time and reduce the number of particles that are generated.

Comparative Example 7

(131) In Comparative Example 7, as the raw material powders, Co powder having an average grain size of 3 m, Cr powder having an average grain size of 5 m, Pt powder having an average grain size of 1 m, TiO.sub.2 powder having an average grain size of 1 m, quartz powder (amorphous SiO.sub.2 powder) having an average grain size of 1 m, and Cr.sub.2O.sub.3 powder having an average grain size of 1 m were prepared. These powders were weighed at the weight percentage of Co powder 52.11 wt %, Cr powder 6.66 wt %, Pt powder 30.00 wt %, TiO.sub.2 powder 3.07 wt %, SiO.sub.2 powder 2.31 wt %, and Cr.sub.2O.sub.3 powder 5.84 wt % to achieve a target composition of 69 Co-10 Cr-12 Pt-3 TiO.sub.2-3 SiO.sub.2-3 Cr.sub.2O.sub.3 (mol %).

(132) Next, these powders were placed in a ball mill pot with a capacity of 10 liters together with zirconia balls as the grinding medium, and rotated and mixed for 20 hours.

(133) Then, this mixed powder was filled in a carbon mold, and hot pressed in a vacuum atmosphere under the conditions of temperature of 1160 C., holding time of 120 minutes, and pressure of 30 MPa to obtain a sintered compact.

(134) This was further processed with a lathe to obtain a disk-shaped target having a diameter of 180 mm and thickness of 5 mm. Note that, in the foregoing production process, the amorphous SiO.sub.2 was formed into cristobalites. With the structure of this target, some SiO.sub.2 subject to grain growth can be observed.

(135) As with Example 1, the peak strength of the (011) plane of the quartz was measured by cutting out a part of the target and performing measurement based on the X-ray diffraction method. In other words, the peak strength appearing at 20:26.64 and the background strength (((average value of strength of 25.1 to 26.1)+(average value of strength of 27.1 to) 28.1)2) were measured.

(136) Consequently, the peak strength appearing at 20:26.64 was 11, and the peak strength ratio of the (011) plane of the quartz relative to the background strength, i.e. quartz peak strength/background strength, was 1.23.

(137) These were both smaller compared to Example 5. The results are shown in Table 1. Here, the measuring device and conditions were the same as Example 1.

(138) As a result of sputtering this target, the number of particles that were generated in a stationary state increased to 18. Moreover, the burn-in life of sputtering was 1.38 kWh, and the burn-in time increased. Thus, when the peak strength ratio of the (011) plane of the quartz decreased, the burn-in time of sputtering increased, and the number of particles that are generated during sputtering also increased. The results are shown in Table 1.

Example 6

(139) In Example 6, as the raw material powders, Co powder having an average grain size of 3 m, Cr powder having an average grain size of 5 m, Ru powder having an average grain size of 8 m, Pt powder having an average grain size of 1 m, TiO.sub.2 powder having an average grain size of 1 m, quartz powder (SiO.sub.2 powder) having an average grain size of 1 m, and Cr.sub.2O.sub.3 powder having an average grain size of 1 m were prepared. These powders were weighed at the weight percentage of Co powder 48.81 wt %, Cr powder 3.12 wt %, Pt powder 35.13 wt %, Ru powder 2.43 wt %, TiO.sub.2 powder 2.88 wt %, SiO.sub.2 powder 2.16 wt %, and Cr.sub.2O.sub.3 powder 5.47 wt % to achieve a target composition of 69 Co-5 Cr-15 Pt-2 Ru-3 TiO.sub.2-3 SiO.sub.2-3 Cr.sub.2O.sub.3 (mol %).

(140) This mixed powder was filled in a carbon mold, and hot pressed in a vacuum atmosphere under the conditions of temperature of 1160 C., holding time of 120 minutes, and pressure of 30 MPa to obtain a sintered compact. This was further processed with a lathe to obtain a disk-shaped target having a diameter of 180 mm and thickness of 5 mm.

(141) The peak strength of quartz was measured by cutting out a part of the target and performing measurement based on the X-ray diffraction method. The results are shown in Table 1.

(142) The peak strength appearing at 2:26.64 was 148, and the background strength (((average value of strength of 25.1 to 26.1)+(average value of strength of 27.1 to) 28.1)2) was also measured.

(143) The peak strength ratio of the quartz of the (011) plane relative to the background strength, i.e. quartz peak strength/background strength, was 4.05. The measuring device was Ultima IV by Rigaku, and the conditions were as follows: tube voltage of 40 kv, tube current of 30 mA, scan speed of 4/min, and step of 0.02.

(144) The results upon sputtering this target are shown in Table 1. The number of particles that were generated in a stationary state was 1.3. Upon measuring the number of particles in a stationary state, the deposition thickness was caused to roughly 20 times the film thickness of HDD products for a better view of the particles.

(145) Moreover, the burn-in life of sputtering was 0.33 kWh. Thus, when the peak strength ratio of the quartz of the (011) plane is high, it was possible to shorten the burn-in time and reduce the number of particles that are generated.

Comparative Example 8

(146) In Comparative Example 8, as the raw material powders, Co powder having an average grain size of 3 m, Cr powder having an average grain size of 5 m, Ru powder having an average grain size of 8 m, Pt powder having an average grain size of 1 m, TiO.sub.2 powder having an average grain size of 1 m, quartz powder (amorphous SiO.sub.2 powder) having an average grain size of 1 m, and Cr.sub.2O.sub.3 powder having an average grain size of 1 m were prepared. These powders were weighed at the weight percentage of Co powder 48.81 wt %, Cr powder 3.12 wt %, Pt powder 35.13 wt %, Ru powder 2.43 wt %, TiO.sub.2 powder 2.88 wt %, SiO.sub.2 powder 2.16 wt %, and Cr.sub.2O.sub.3 powder 5.47 wt % to achieve a target composition of 69 Co-5 Cr-15 Pt-2 Ru-3 TiO.sub.2-3 SiO.sub.2-3 Cr.sub.2O.sub.3 (mol %).

(147) Next, these powders were placed in a ball mill pot with a capacity of 10 liters together with zirconia balls as the grinding medium, and rotated and mixed for 20 hours.

(148) Then, this mixed powder was filled in a carbon mold, and hot pressed in a vacuum atmosphere under the conditions of temperature of 1160 C., holding time of 120 minutes, and pressure of 30 MPa to obtain a sintered compact.

(149) This was further processed with a lathe to obtain a disk-shaped target having a diameter of 180 mm and thickness of 5 mm. Note that, in the foregoing production process, the amorphous SiO.sub.2 was formed into cristobalites. With the structure of this target, some SiO.sub.2 subject to grain growth can be observed.

(150) As with Example 1, the peak strength of the (011) plane of the quartz was measured by cutting out a part of the target and performing measurement based on the X-ray diffraction method. In other words, the peak strength appearing at 2:26.64 and the background strength (((average value of strength of 25.1 to 26.1)+(average value of strength of 27.1 to) 28.1)2) were measured.

(151) Consequently, the peak strength appearing at 2:26.64 was 12, and the peak strength ratio of the (011) plane of the quartz relative to the background strength, i.e. quartz peak strength/background strength, was 1.29.

(152) These were both smaller compared to Example 6. The results are shown in Table 1. Here, the measuring device and conditions were the same as Example 1.

(153) As a result of sputtering this target, the number of particles that were generated in a stationary state increased to 19. Moreover, the burn-in life of sputtering was 1.45 kWh, and the burn-in time increased. Thus, when the peak strength ratio of the (011) plane of the quartz decreased, the burn-in time of sputtering increased, and the number of particles that are generated during sputtering also increased. The results are shown in Table 1.

Example 7

(154) In Example 7, as the raw material powders, Co powder having an average grain size of 3 m, Cr powder having an average grain size of 5 m, Pt powder having an average grain size of 1 m, B powder having an average grain size of 3 m, and quartz powder (SiO.sub.2 powder) having an average grain size of 1 m were prepared. These powders were weighed at the weight percentage of Co powder 52.24 wt %, Cr powder 13.38 wt %, Pt powder 27.89 wt %, B powder 0.46 wt %, and SiO.sub.2 powder 6.01 wt % to achieve a target composition of 62 Co-18 Cr-10 Pt-3 B-7 SiO.sub.2 (mol %).

(155) This mixed powder was filled in a carbon mold, and hot pressed in a vacuum atmosphere under the conditions of temperature of 900 C., holding time of 120 minutes, and pressure of 30 MPa to obtain a sintered compact. This was further processed with a lathe to obtain a disk-shaped target having a diameter of 180 mm and thickness of 5 mm.

(156) The peak strength of quartz was measured by cutting out a part of the target and performing measurement based on the X-ray diffraction method. The results are shown in Table 1.

(157) The peak strength appearing at 2:26.64 was 377, and the background strength (((average value of strength of 25.1 to 26.1)+(average value of strength of 27.1 to) 28.1)2) was also measured.

(158) The peak strength ratio of the quartz of the (011) plane relative to the background strength, i.e. quartz peak strength/background strength, was 10.24. The measuring device was Ultima IV by Rigaku, and the conditions were as follows: tube voltage of 40 kv, tube current of 30 mA, scan speed of 4/min, and step of 0.02.

(159) The results upon sputtering this target are shown in Table 1. The number of particles that were generated in a stationary state was 1.2. Upon measuring the number of particles in a stationary state, the deposition thickness was caused to roughly 20 times the film thickness of HDD products for a better view of the particles.

(160) Moreover, the burn-in life of sputtering was 0.26 kWh. Thus, when the peak strength ratio of the quartz of the (011) plane is high, it was possible to shorten the burn-in time and reduce the number of particles that are generated.

Comparative Example 9

(161) In Comparative Example 9, as the raw material powders, Co powder having an average grain size of 3 m, Cr powder having an average grain size of 5 m, Pt powder having an average grain size of 1 m, B powder having an average grain size of 3 m, and quartz powder (amorphous SiO.sub.2 powder) having an average grain size of 1 m were prepared. These powders were weighed at the weight percentage of Co powder 52.24 wt %, Cr powder 13.38 wt %, Pt powder 27.89 wt %, B powder 0.46 wt %, and SiO.sub.2 powder 6.01 wt % to achieve a target composition of 62 Co-18 Cr-10 Pt-3 B-7 SiO.sub.2 (mol %).

(162) Next, these powders were placed in a ball mill pot with a capacity of 10 liters together with zirconia balls as the grinding medium, and rotated and mixed for 20 hours.

(163) Then, this mixed powder was filled in a carbon mold, and hot pressed in a vacuum atmosphere under the conditions of temperature of 900 C., holding time of 120 minutes, and pressure of 30 MPa to obtain a sintered compact.

(164) This was further processed with a lathe to obtain a disk-shaped target having a diameter of 180 mm and thickness of 5 mm. With the structure photo of this target, some SiO.sub.2 subject to grain growth can be observed.

(165) As with Example 1, the peak strength of the (011) plane of the quartz was measured by cutting out a part of the target and performing measurement based on the X-ray diffraction method. In other words, the peak strength appearing at 2:26.64 and the background strength (((average value of strength of 25.1 to 26.1)+(average value of strength of 27.1 to) 28.1)2) were measured.

(166) Consequently, the peak strength appearing at 2:26.64 was 12, and the peak strength ratio of the (011) plane of the quartz relative to the background strength, i.e. quartz peak strength/background strength, was 1.28.

(167) These were both smaller compared to Example 7. The results are shown in Table 1. Here, the measuring device and conditions were the same as Example 1.

(168) As a result of sputtering this target, the number of particles that were generated in a stationary state increased to 3.1. Moreover, the burn-in life of sputtering was 0.47 kWh, and the burn-in time increased. Thus, when the peak strength ratio of the (011) plane of the quartz decreased, the burn-in time of sputtering increased, and the number of particles that are generated during sputtering also increased. The results are shown in Table 1.

Example 8

(169) In Example 8, as the raw material powders, Co powder having an average grain size of 3 m, Cr powder having an average grain size of 5 m, Pt powder having an average grain size of 1 m, and quartz powder (SiO.sub.2 powder) having an average grain size of 1 m were prepared. These powders were weighed at the weight percentage of Co powder 54.03 wt %, Cr powder 7.94 wt %, Pt powder 37.26 wt %, and SiO.sub.2 powder 0.77 wt % to achieve a target composition of 72 Co-12 Cr-15 PtSiO.sub.2 (mol %).

(170) This mixed powder was filled in a carbon mold, and hot pressed in a vacuum atmosphere under the conditions of temperature of 1160 C., holding time of 120 minutes, and pressure of 30 MPa to obtain a sintered compact. This was further processed with a lathe to obtain a disk-shaped target having a diameter of 180 mm and thickness of 5 mm.

(171) The peak strength of quartz was measured by cutting out a part of the target and performing measurement based on the X-ray diffraction method. The results are shown in Table 1.

(172) The peak strength appearing at 2:26.64 was 53, and the background strength (((average value of strength of 25.1 to 26.1)+(average value of strength of 27.1 to) 28.1)2) was also measured.

(173) The peak strength ratio of the quartz of the (011) plane relative to the background strength, i.e. quartz peak strength/background strength, was 1.44. The measuring device was Ultima IV by Rigaku, and the conditions were as follows: tube voltage of 40 kv, tube current of 30 mA, scan speed of 4/min, and step of 0.02.

(174) The results upon sputtering this target are shown in Table 1. The number of particles that were generated in a stationary state was 1.1. Upon measuring the number of particles in a stationary state, the deposition thickness was caused to roughly 20 times the film thickness of HDD products for a better view of the particles.

(175) Moreover, the burn-in life of sputtering was 0.31 kWh. Thus, when the peak strength ratio of the quartz of the (011) plane is high, it was possible to shorten the burn-in time and reduce the number of particles that are generated.

Comparative Example 10

(176) In Comparative Example 10, as the raw material powders, Co powder having an average grain size of 3 m, Cr powder having an average grain size of 5 m, Pt powder having an average grain size of 1 m, and quartz powder (amorphous SiO.sub.2 powder) having an average grain size of 1 m were prepared. These powders were weighed at the weight percentage of Co powder 54.03 wt %, Cr powder 7.94 wt %, Pt powder 37.26 wt %, and SiO.sub.2 powder 0.77 wt % to achieve a target composition of 72 Co-12 Cr-15 PtSiO.sub.2 (mol %).

(177) Next, these powders were placed in a ball mill pot with a capacity of 10 liters together with zirconia balls as the grinding medium, and rotated and mixed for 20 hours.

(178) Then, this mixed powder was filled in a carbon mold, and hot pressed in a vacuum atmosphere under the conditions of temperature of 1160 C., holding time of 120 minutes, and pressure of 30 MPa to obtain a sintered compact.

(179) This was further processed with a lathe to obtain a disk-shaped target having a diameter of 180 mm and thickness of 5 mm. Note that, in the foregoing production process, the amorphous SiO.sub.2 was formed into cristobalites. With the structure photo of this target, some SiO.sub.2 subject to grain growth can be observed.

(180) As with Example 1, the peak strength of the (011) plane of the quartz was measured by cutting out a part of the target and performing measurement based on the X-ray diffraction method. In other words, the peak strength appearing at 2:26.64 and the background strength (((average value of strength of 25.1 to 26.1)+(average value of strength of 27.1 to) 28.1)2) were measured.

(181) Consequently, the peak strength appearing at 2:26.64 was 10, and the peak strength ratio of the (011) plane of the quartz relative to the background strength, i.e. quartz peak strength/background strength, was 1.22.

(182) These were both smaller compared to Example 8. The results are shown in Table 1. Here, the measuring device and conditions were the same as Example 1.

(183) As a result of sputtering this target, the number of particles that were generated in a stationary state increased to 10.2. Moreover, the burn-in life of sputtering was 1.02 kWh, and the burn-in time increased. Thus, when the peak strength ratio of the (011) plane of the quartz decreased, the burn-in time of sputtering increased, and the number of particles that are generated during sputtering also increased. The results are shown in Table 1.

Example 9

(184) In Example 9, as the raw material powders, Fe powder having an average grain size of 5 m, Pt powder having an average grain size of 1 m, SiO.sub.2 powder (amorphous SiO.sub.2 powder) having an average grain size of 1 m, and C powder having an average grain size of 0.05 m were prepared. These powders were weighed at the weight percentage of Fe powder 21.51 wt %, Pt powder 73.64 wt %, SiO.sub.2 powder 4.75 wt %, and C powder 0.53 wt % to achieve a target composition of 43 Fe-43 Pt-9 SiO.sub.2-5 C (mol %).

(185) This mixed powder was filled in a carbon mold, and hot pressed in a vacuum atmosphere under the conditions of temperature of 1200 C., holding time of 120 minutes, and pressure of 30 MPa to obtain a sintered compact. This was further processed with a lathe to obtain a disk-shaped target having a diameter of 180 mm and thickness of 5 mm.

(186) The peak strength of quartz was measured by cutting out a part of the target and performing measurement based on the X-ray diffraction method. The results are shown in Table 1. The peak strength appearing at 2:26.64 was 358, and the background strength (((average value of strength of 25.1 to 26.1)+(average value of strength of 27.1 to) 28.1)2) was also measured.

(187) The peak strength ratio of the quartz of the (011) plane relative to the background strength, i.e. quartz peak strength/background strength, was 8.76. The measuring device was Ultima IV by Rigaku, and the conditions were as follows: tube voltage of 40 kv, tube current of 30 mA, scan speed of 4/min, and step of 0.02.

(188) The results upon sputtering this target are shown in Table 1. The number of particles that were generated in a stationary state was 9.8. Upon measuring the number of particles in a stationary state, the deposition thickness was caused to roughly 20 times the film thickness of HDD products for a better view of the particles.

(189) Moreover, the burn-in life of sputtering was 0.43 kWh. Thus, when the peak strength ratio of the quartz of the (011) plane is high, it was possible to shorten the burn-in time and reduce the number of particles that are generated.

Comparative Example 11

(190) In Comparative Example 11, as the raw material powders, Fe powder having an average grain size of 5 m, Pt powder having an average grain size of 1 m, SiO.sub.2 powder (amorphous SiO.sub.2 powder) having an average grain size of 1 m, and C powder having an average grain size of 0.05 m were prepared. These powders were weighed at the weight percentage of Fe powder 21.51 wt %, Pt powder 73.64 wt %, SiO.sub.2 powder 4.75 wt %, and C powder 0.53 wt % to achieve a target composition of 43 Fe-43 Pt-9 SiO.sub.2-5 C (mol %).

(191) Next, these powders were placed in a ball mill pot with a capacity of 10 liters together with zirconia balls as the grinding medium, and rotated and mixed for 20 hours.

(192) Then, this mixed powder was filled in a carbon mold, and hot pressed in a vacuum atmosphere under the conditions of temperature of 1200 C., holding time of 120 minutes, and pressure of 30 MPa to obtain a sintered compact.

(193) This was further processed with a lathe to obtain a disk-shaped target having a diameter of 180 mm and thickness of 5 mm. Note that, in the foregoing production process, the amorphous SiO.sub.2 was formed into cristobalites. With the structure of this target, some SiO.sub.2 subject to grain growth can be observed.

(194) As with Example 1, the peak strength of the (011) plane of the quartz was measured by cutting out a part of the target and performing measurement based on the X-ray diffraction method. In other words, the peak strength appearing at 2:26.64 and the background strength (((average value of strength of 25.1 to 26.1)+(average value of strength of 27.1 to) 28.1)2) were measured.

(195) Consequently, the peak strength appearing at 2:26.64 was 11, and the peak strength ratio of the (011) plane of the quartz relative to the background strength, i.e. quartz peak strength/background strength, was 1.23.

(196) These were both smaller compared to Example 9. The results are shown in Table 1. Here, the measuring device and conditions were the same as Example 1.

(197) As a result of sputtering this target, the number of particles that were generated in a stationary state increased to 31. Moreover, the burn-in life of sputtering was 2.062 kWh, and the burn-in time increased.

(198) Thus, when the peak strength ratio of the (011) plane of the quartz decreased, the burn-in time of sputtering increased, and the number of particles that are generated during sputtering also increased. The results are shown in Table 1.

(199) The sputtering target for a magnetic recording film target of the present invention yields superior effects of being able to inhibit the generation of micro cracks in a target, inhibit the generation of particles during sputtering, and shorten the burn-in time. Since few particles are generated, a significant effect is yielded in that the percent defective of the magnetic recording film is reduced and cost reduction can be realized. Moreover, shortening of the burn-in time contributes significantly to the improvement of production efficiency.

(200) In addition, since the density of quartz is higher than the density of amorphous SiO.sub.2 or cristobalite, the amount of substance of SiO.sub.2 per unit volume can be increased by using quartz; that is, by increasing the amount of substance of oxide (i.e. quartz) in the target, the present invention yields a significant effect of being able to magnetically and finely separate the single-domain particles after deposition, and improve recording density.

(201) Accordingly, the present invention is effective as a ferromagnetic material sputtering target for use in forming a magnetic body thin film of a magnetic recording medium, and particularly for forming a hard disk drive recording layer.