Electrical circuit in the magnetic field of an MR apparatus

Abstract

An electrical circuit with one or more semiconductor components (10) is characterized in that at least one semiconductor junction of at least one of the semiconductor components of the electrical circuit is disposed such that the average direction of motion of the charge carriers in the semiconductor junction is essentially parallel to the lines of force of the magnetic field B.sub.0, wherein the corresponding semiconductor component is disposed directly on a substrate (12), which is made of a material with good thermal conduction properties. In this way, undistorted characteristics of the semiconductor component used can be ensured despite the very strong magnetic field and the low operating temperatures.

Claims

1. An electrical circuit adapted for use in an MR apparatus, the MR apparatus structured for MR (magnetic resonance) spectroscopy or tomography, the MR apparatus comprising: a magnet or a superconducting magnet structured to produce a B.sub.0 magnetic field of at least 1T in a direction of a z-axis in a working volume disposed on the z-axis about z=0; a cryogenic MR receiver; and an MR transmitter, wherein the electrical circuit is disposed in the MR apparatus as part of the cryogenic MR receiver and/or of the MR transmitter at an operating temperature below 100K and in the B.sub.0 magnetic field, the electrical circuit comprising: one or more semiconductor components, wherein at least one semiconductor junction of at least one of said semiconductor components is disposed such that an average direction of motion of charge carriers in said semiconductor junction is substantially parallel to lines of force of the B.sub.0 magnetic field; and a substrate, said substrate being made of a material having thermal conduction properties better than 10 Wm.sup.1K.sup.1, wherein said semiconductor component having said semiconductor junction is directly disposed on said substrate.

2. The electrical circuit of claim 1, wherein all said semiconductor junctions of all said semiconductor components of the electrical circuit are oriented such that said direction of motion of said charge carriers is substantially parallel to the B.sub.0 magnetic field lines of force.

3. The electrical circuit of claim 1, wherein said substrate is made of an electrically conductive substrate material and said semiconductor components of said electrical circuit are thermally conductively connected to said substrate.

4. The electrical circuit of claim 3, wherein said substrate material comprises copper, silver and/or aluminum.

5. The electrical circuit of claim 1, wherein said substrate is made of an electrically insulating material.

6. The electrical circuit of claim 5, wherein said substrate material comprises ceramic aluminum oxide, aluminum nitride, sapphire, beryllium oxide and/or silicon oxide.

7. The electrical circuit of claim 1, wherein the electrical circuit is disposed in a vacuum.

8. The electrical circuit of claim 1, wherein said substrate is made of a material having thermal conduction properties better than 10 Wm.sup.1K.sup.1, which is connected to a heat sink.

9. The electrical circuit of claim 1, wherein all materials used are non-magnetizable.

10. The electrical circuit of claim 1, wherein RF (radio frequency) switching diodes, RF limiter diodes and/or varactor diodes are provided as said semiconductor components.

11. The electrical circuit of claim 1, wherein active elements FET and/or bipolar transistors are provided as said semiconductor components.

12. The electrical circuit of claim 1, wherein initial materials of said semiconductor components comprise GaAs, GaN, silicon, germanium and/or SiGe.

13. A method for operating the electrical circuit of claim 1, the method comprising the step of amplifying an MR signal.

14. A method for operating the electrical circuit of claim 1, the method comprising the step of tuning and/or matching an MR receiver coil.

15. A method for operating the electrical circuit of claim 1, the method comprising the step of reducing a current induced by an MR transmitter coil in an MR receiver coil and/or switching over the MR receiver coil to transmit during transmission.

Description

BRIEF DESCRIPTION OF THE DRAWING

(1) FIG. 1 an embodiment of the inventive device;

(2) FIG. 2 a schematic overview of an MRI system;

(3) FIG. 3 the cross section of a planar structured diode;

(4) FIG. 4 a FET structure with a finger structure in an oblique view;

(5) FIG. 5 the motion of a charge carrier in the xy-plane under the influence of an E and B-field;

(6) FIG. 6 the average drift angle of a charge carrier;

(7) FIG. 7 prior art 1; and

(8) FIG. 8 prior art 2.

DESCRIPTION OF THE PREFERRED EMBODIMENT

(9) FIG. 1 illustrates an embodiment of the inventive electrical circuit with one or more semiconductor components 10 for use in an apparatus for MR (=magnetic resonance) spectroscopy or tomography with a preferably superconducting magnet 20 for producing a magnetic field in the direction of a z-axis in a working volume disposed on the z-axis about z=0, wherein the electrical circuit, as part of a cryogenic MR receive 29 and/or MR transmit device 24, is disposed at an operating temperature below 100K and in a magnetic field B.sub.0 of at least 1T in the MR apparatus, which is characterized in that at least one semiconductor junction of at least one semiconductor component 10 of the electrical circuit is disposed such that the average direction of motion of the charge carriers in the semiconductor junction is essentially parallel to the lines of force of the magnetic field B.sub.0, wherein the corresponding semiconductor component 10 is disposed directly on a substrate 12, which is made of a material with good thermal conduction properties.

(10) TABLE-US-00001 List of reference symbols Semiconductor component 10 Bond connection 11 Substrate 12 Screw fastening 13 Heat sink 14 Coolant 15 Terminals 16 Medium 17 Conductor structure 18 Magnetic field B.sub.0 Magnet coil system 20 Dewar 21 Shim and gradient system 22 Room temperature bore 23 Transmitter coil 24 Receiver coil 25 Tune/match/detune circuit 26 Preamplifier 27 Electrical circuit 28 Cryogenic receiver device 29 Cooler 30 Sample 31 MRI electronics 32 Excitation field B.sub.1 Transmitter TX Receiver RX Anode 40 Cathode 41 Junction w Electron e Positively doped region p Negatively doped region n Drain 42 Gate 43 Source 44 Charge carrier flow 45 Semiconductor material N Charge carrier e+ Printed circuit board 70 Plastic housing 71 Semiconductor component 72 Liquid nitrogen 73 Printed circuit board 70 Plastic housing 71 Semiconductor component 72 Liquid nitrogen 73 Heat sink 74

LIST OF REFERENCES

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