Nanopatterned substrate serving as both a current collector and template for nanostructured electrode growth
09601747 ยท 2017-03-21
Assignee
Inventors
Cpc classification
C25D11/024
CHEMISTRY; METALLURGY
Y02P70/50
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10T29/49115
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y02E60/10
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
H10F77/14
ELECTRICITY
H10F77/169
ELECTRICITY
Y02E10/52
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
International classification
H01L31/054
ELECTRICITY
H01L31/0352
ELECTRICITY
H01L31/0392
ELECTRICITY
Abstract
A process of forming and the resulting nano-pitted metal substrate that serves both as patterns to grow nanostructured materials and as current collectors for the resulting nanostructured material is disclosed herein. The nano-pitted substrate can be fabricated from any suitable conductive material that allows nanostructured electrodes to be grown directly on the substrate.
Claims
1. A method of constructing a nanobattery, said method comprising the steps of: a. forming a nanostructured anode electrode directly on a nano-pitted anode substrate, wherein said nano-pitted anode substrate is an oxidized metal thin film configured as both an anode current collector and an anode growth substrate for said nanostructured anode electrode, including the step of nano-pitting said anode substrate through an electrochemical process; b. forming a nanostructured cathode electrode directly on a nano-pitted cathode substrate, wherein said nano-pitted cathode substrate is an oxidized metal thin film configured as both a cathode current collector and a cathode growth substrate for said nanostructured cathode electrode, including the step of nano-pitting said cathode substrate through an electrochemical process; and c. forming an electrolyte layer intermediate of said nanostructured anode cathode and said nanostructured anode to construct said nanobattery.
2. The method of claim 1 wherein said oxidized metal thin film forming said nano-pitted anode substrate and/or said oxidized metal thin film forming said nano-pitted cathode substrate is selected from the group consisting of aluminum (Al), antimony (Sb), bismuth (Bi), boron (B), cadmium (Cd), carbon (C), cerium (Ce), chromium (Cr), cobalt (Co), copper (Cu), dysprosium (Dy), erbium (Er), europium (Eu), gadolinium (Gd), germanium (Ge), gold (Au), graphite (C), hafnium (Hf), holmium (Ho), indium (In), iridium (Ir), iron (Fe), lanthanum (La), lutetium (Lu), magnesium (Mg), manganese (Mn), molybdenum (Mo), neodymium (Nd), nickel (Ni), niobium (Nb), palladium (Pd), platinum (Pt), praseodymium (Pr), rhenium (Re), ruthenium (Ru), samarium (Sm), selenium (Se), scandium (Sc), silver (Ag), silicon (Si), tantalum (Ta), terbium (Tb), thulium (Tm), tin (Sn), titanium (Ti), tungsten (W), vanadium (V), ytterbium (Yb), yttrium (Y), zirconium (Zr) or zinc (Zn).
3. The method of claim 1 wherein said oxidized metal thin film forming said nano-pitted anode substrate and/or said oxidized metal thin film forming said nano-pitted cathode substrate is selected from the group consisting of aluminum copper (AlCu), aluminum chromium (AlCr), aluminum magnesium (AlMg), aluminum silicon (AlSi), aluminum silver (AlAg), cerium gadolinium (CeGd), cerium samarium (CeSm), chromium silicon (CrSi), cobalt chromium (CoCr), cobalt iron (CoFe), cobalt iron boron (CoFeB), copper cobalt (CuCo), copper gallium (CuGa), copper indium (CuIn), copper nickel (CuNi), copper zirconium (CuZr), hafnium iron (HfFe), iron boron (FeB), iron carbon (FeC), iron manganese (FeMn), iridium manganese (IrMn), iridium rhenium (IrRe), indium tin (InSn), molybdenum silicon (MoSi), nickel aluminum (NiAl), nickel chromium (NiCr), nickel chromium silicon (NiCrSi), nickel iron (NiFe), nickel niobium titanium (NiNbTi), nickel titanium (NiTi), nickel vanadium (NiV), samarium cobalt (SmCo), silver copper (AgCu), silver tin (AgSn), tantalum aluminum (TaAl), terbium dysprosium iron (TbDyFe), terbium iron alloy (TbFe), titanium aluminum (TiAl), titanium nickel (TiNi), titanium chromium (TiCr), tungsten rhenium (WRe), tungsten titanium (WTi), zirconium aluminum (ZrAl), zirconium iron (ZrFe), zirconium nickel (ZrNi), zirconium niobium (ZrNb), zirconium titanium (ZrTi), zirconium yttrium (ZrY), zinc aluminum (ZnAl) or zinc magnesium (ZnMg).
4. The method of claim 1 wherein said step of forming said nanostructured anode electrode further comprises the step of depositing at least one anode material directly on said oxidized metal thin film forming said nano-pitted anode substrate and/or wherein said step of forming said nanostructured cathode electrode further comprises the step of depositing at least one cathode material directly on said oxidized metal thin film forming said nano-pitted cathode substrate.
5. The method of claim 4 wherein said step of depositing said anode material and/or said step of depositing said cathode material is accomplished by sputter-coating, chemical vapor deposition or pulsed laser method.
6. The method of claim 5 wherein said sputter-coating is selected from the group consisting of direct current sputter-coating, radio frequency sputter-coating, magnetron sputter-coating or reactive sputter-coating.
7. The method of claim 4 wherein said anode material and/or said cathode material is selected from the group consisting of conductive materials consisting of an oxide, polymeric, ceramic, mineral or metallic material.
8. The method of claim 7 wherein said anode material is selected from the group consisting of carbon, silicon, graphite, a mixed metal oxide, hydroxyapatite, nichrome or graphite.
9. The method of claim 7 wherein said anode material further comprises tin oxide (SnO.sub.2), zinc oxide, copper oxide, titanium oxide, titanium dioxide, vanadium pentoxide, magnesium oxide or silicon dioxide.
10. The method of claim 7 wherein said cathode material is selected from the group consisting of carbon, silicon, graphite, a copper oxide, graphite, a lithium-containing oxide, a phosphate, a fluorophosphate, a silicate, tin oxide, zinc oxide, titanium oxide, titanium dioxide, vanadium pentoxide, magnesium oxide, silicon dioxide, nichrome or hydroxyapatite.
11. The method of claim 7 wherein said cathode material further comprises lithium cobalt oxide (LiCoO.sub.2), tin oxide (SnO.sub.2), Li.sub.4Ti.sub.5O.sub.12, Li.sub.4Ti.sub.5O.sub.12, zinc oxide, copper oxide, titanium oxide, titanium dioxide, vanadium pentoxide, magnesium oxide, silicon dioxide, nichrome, Li.sub.4Ti.sub.5O.sub.12, Li.sub.4Ti.sub.5O.sub.12, LiNixCO.sub.1.sub._.sub.2xMnO.sub.2, LiNi.sub.0.5Mn.sub.1.5O.sub.4, Li(Ni.sub.0.8Co.sub.0.15Al.sub.0.05)O.sub.2, LiMn.sub.2O.sub.4, iron olivine (LiFePO.sub.4), LiFe.sub.1-xMgPO.sub.4, LiMoPO.sub.4, LiCoPO.sub.4, LiNiPO.sub.4, Li.sub.3V.sub.2(PO.sub.4).sub.3, LiVOPO.sub.4, LiMP.sub.2O.sub.7, LiFe.sub.1.5P.sub.2O.sub.7, LiVPO.sub.4F, LiAlPO.sub.4F, Li.sub.5V(PO.sub.4).sub.2F.sub.2, Li.sub.5Cr(PO.sub.4).sub.2F.sub.2, Li.sub.2CoPO.sub.4F, Li.sub.2NiPO.sub.4F, Li.sub.2FeSiO.sub.4, Li.sub.2MnSiO.sub.4 or Li.sub.2VOSiO.sub.4.
12. The method of claim 1 further comprising the steps of: a. chemically polishing a metal thin film in a first acid for a predetermined amount of polishing time; b. oxidizing said metal thin film with an acidic solution in an electrochemical cell at a predetermined temperature, a first predetermined voltage potential and for a predetermined amount of oxidation time; c. decreasing said first predetermined voltage potential at a predetermined step-down rate to a second predetermined voltage potential; and d. etching said oxidized metal thin film with a second acid to form said anode nano-pitted substrate and/or said cathode nano-pitted substrate.
13. The method of claim 1 wherein each of said nano-pits of said nano-pitted anode substrate and said nano-pitted cathode substrate has a diameter of up to about 200 nanometers and a depth of up to about 150 nanometers.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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(16) Other advantages and features will be apparent from the following description and from the claims.
DETAILED DESCRIPTION OF THE INVENTION
(17) The invention discussed herein is merely illustrative of specific manners in which to make and use this invention and are not to be interpreted as limiting in scope.
(18) While the invention has been described with a certain degree of particularity, it is to be noted that many modifications may be made in the details of the construction and the arrangement of the devices and components without departing from the spirit and scope of this disclosure. It is understood that the invention is not limited to the embodiments set forth herein for purposes of exemplification.
(19) Referring to the figures of the drawings, wherein like numerals of reference designate like elements throughout the several views, and initially to
(20) The nanostructured electrodes can be formed using sputter-coating techniques, including but not limited to, DC sputter-coating, RF sputter-coating and RF magnetron sputter-coating. Chemical reactive sputtering could also be used to form the nanostructured electrodes. In addition, the nanostructured electrodes could also be formed using chemical vapor deposition or pulsed laser methods.
(21) At the surface of the nanostructured or nano-pitted substrate, the pores have a continuous edge, which could be of any relative geometric configuration. As a target material is sputter-coated, nanoscale clusters of the material collect preferentially on the continuous edge of the pores of the underlying substrate. As the process of depositing material continues, a gradual build-up of walls effectively extends the pore structure with the target material to form a nanotube. The pore size of these nanotubes is dependent on the substrate's original pore structure and, therefore, their diameter can be varied by using substrates of varying pore sizes.
(22) As the sputter-coating process is continued, the walls grow thicker as they grow taller so that they will eventually touch, capping over the pore spaces with deposited material to form the base or end of a nanostructured electrode. Depending on the parameters used in the sputter-coating process, such as plasma gas concentration, power, target materials, and underlying substrate, the pores can be made to cap at various lengths or heights from the substrate surface, ranging from tens to hundreds of nanometers.
(23) The substrate could be made from numerous materials whose surface energy values are such that they are conducive to the formation of nanostructured electrodes. In one example, a substrate has a plurality of pores that range between ten (10) micrometers to one (1) nanometer (nm) in diameter. Various substrates could be used, e.g., either polymeric (such as polycarbonate), ceramic material (such as alumina oxide (Al.sub.2O.sub.3)), silicon or metallic porous structures (such as aluminum (Al), antimony (Sb), bismuth (Bi), boron (B), cadmium (Cd), carbon (C), cerium (Ce), chromium (Cr), cobalt (Co), copper (Cu), dysprosium (Dy), erbium (Er), europium (Eu), gadolinium (Gd), germanium (Ge), gold (Au), graphite (C), hafnium (Hf), holmium (Ho), indium (In), iridium (Ir), iron (Fe), lanthanum (La), lutetium (Lu), magnesium (Mg), manganese (Mn), molybdenum (Mo), neodymium (Nd), nickel (Ni), niobium (Nb), palladium (Pd), platinum (Pt), praseodymium (Pr), rhenium (Re), ruthenium (Ru), samarium (Sm), selenium (Se), scandium (Sc), silver (Ag), silicon (Si), tantalum (Ta), terbium (Tb), thulium (Tm), tin (Sn), titanium (Ti), tungsten (W), vanadium (V), ytterbium (Yb), yttrium (Y), zirconium (Zr) or zinc (Zn)), metal alloy porous structures (such as aluminum copper (AlCu), aluminum chromium (AlCr), aluminum magnesium (AlMg), aluminum silicon (AlSi), aluminum silver (AlAg), cerium gadolinium (CeGd), cerium samarium (CeSm), chromium silicon (CrSi), cobalt chromium (CoCr), cobalt iron (CoFe), cobalt iron boron (CoFeB), copper cobalt (CuCo), copper gallium (CuGa), copper indium (CuIn), copper nickel (CuNi), copper zirconium (CuZr), hafnium iron (HfFe), iron boron (FeB), iron carbon (FeC), iron manganese (FeMn), iridium manganese (IrMn), iridium rhenium (IrRe), indium tin (InSn), molybdenum silicon (MoSi), nickel aluminum (NiAl), nickel chromium (NiCr), nickel chromium silicon (NiCrSi), nickel iron (NiFe), nickel niobium titanium (NiNbTi), nickel titanium (NiTi), nickel vanadium (NiV), samarium cobalt (SmCo), silver copper (AgCu), silver tin (AgSn), tantalum aluminum (TaAl), terbium dysprosium iron (TbDyFe), terbium iron alloy (TbFe), titanium aluminum (TiAl), titanium nickel (TiNi), titanium chromium (TiCr), tungsten rhenium (WRe), tungsten titanium (WTi), zirconium aluminum (ZrAl), zirconium iron (ZrFe), zirconium nickel (ZrNi), zirconium niobium (ZrNb), zirconium titanium (ZrTi), zirconium yttrium (ZrY), zinc aluminum (ZnAl) or zinc magnesium (ZnMg)), among others, could also be used. The nanoporous substrate could be created by laser ablation, a chemical etching process, an electrochemical process, track etching, micro- or nano-lithography, contact lithography, X-ray-beam lithography, electron-beam lithography, ion-beam lithography, photo-lithography, nano-imprint lithography, chemical self-assembly or by other methods.
(24) For example, a nanoporous anodized aluminum oxide (AAO) substrate could be prepared by applying an electrical potential to an aluminum sheet while in an aqueous acid solution and then electro-polishing the surface. In particular, AAO synthesis is accomplished by assembling an electrochemical cell with a sheet of polished high-purity aluminum as the anode, graphite or steel as the counter electrode and an acidic electrolyte (usually oxalic, phosphoric, or sulfuric acid). When a potential is applied across the cell, aluminum oxide is formed at the surface of the aluminum sheet, and under certain conditions the oxide layer forms well-ordered pores in a hexagonal pattern. The pores self-assemble during anodization due to competition between two processes: the formation of alumina at the oxide/aluminum interface, and the dissolution of the alumina at the oxide/electrolyte interface. As the aluminum oxide grows, the aluminum is removed from the aluminum substrate leaving a nano-pitted surface having pores that match the arrangement of pores in the oxide layer. The aluminum metal layer is removed once the oxide has reached the desired thickness. The AAO substrate can then be used as a growth template for nanostructured electrodes, or as illustrated in
(25) The processes and methods disclosed herein are robust and can be utilized with various materials for making the nanostructure electrodes. For example, copper oxide electrodes are of importance in catalytic operations, while metal alloys, such as nichrome, are useful for the manufacture of thermal devices. Other materials such as hydroxyapatite, the mineral closest in composition to bone, are amenable to this technique and have been observed to form nanobaskets. These materials may have important applications as bone mimics and tissue scaffolding. In addition, anode materials could be graphite, SnO.sub.2, silicon, Li.sub.4Ti.sub.5O.sub.12, Li.sub.4Ti.sub.5O.sub.12, or any other suitable anode material. Cathode materials could include lithium-containing oxides, such as lithium cobalt oxide (LiCoO.sub.2), mixed metal oxides, such as LiNixCO.sub.1.sub._.sub.2xMnO.sub.2, LiNi.sub.0.5Mn.sub.1.5O.sub.4, Li(Ni.sub.0.8Co.sub.0.15Al.sub.0.05)O.sub.2, LiMn.sub.2O.sub.4; phosphates, such as iron olivine (LiFePO.sub.4) and it is variants such as LiFe.sub.1-xMgPO.sub.4, LiMoPO.sub.4, LiCoPO.sub.4, LiNiPO.sub.4, Li.sub.3V.sub.2(PO.sub.4).sub.3, LiVOPO.sub.4, LiMP.sub.2O.sub.7, or LiFe.sub.1.5P.sub.2O.sub.7; fluorophosphates, such as LiVPO.sub.4F, LiAlPO.sub.4F, Li.sub.5V(PO.sub.4).sub.2F.sub.2, Li.sub.5Cr(PO.sub.4).sub.2F.sub.2, Li.sub.2CoPO.sub.4F, or Li.sub.2NiPO.sub.4F; silicates, such as Li.sub.2FeSiO.sub.4, Li.sub.2MnSiO.sub.4, or Li.sub.2VOSiO.sub.4, or any other suitable cathode material.
(26) The fabrication processes disclosed herein also allow the formation of nanostructured electrodes composed of multiple compositions. The ability to create layered electrodes directly on a nanostructure or nano-pitted metal substrate allows for the straightforward and easy assembly of nano-devices using appropriate selections of materials, such as current collectors, electrodes, and semiconductors or layered semiconductors. A layered nanobasket system may made by sputtering a first material, but stopping the sputtering at some desired point before the walls have grown thick enough to form a cap. A second material can then be sputtered atop the first, continuing to extend the walls of the baskets upward. Sputtering of this second material can continue until capping occurs, or it can also be stopped at a desired point before the walls have grown together, and more layers can be added. The number of layers possible is dependent upon the materials and pore sizes used. The nanobasket structures and/or layers within them may be made from doped elements or compounds; for example, SnO.sub.2 doped with Indium.
(27) In addition, a thin layer of liquid electrolyte or a thin layer of solid electrolyte can be utilized. The liquid electrolyte could be aqueous or non-aqueous in nature. A solid electrolyte could include oxides, ceramics or polymer electrolytes. The thin layer could be placed on the electrodes by several methods, including but not limited to DC sputter coating, RF magnetron sputter coating, vapor deposition, spin coating and chemical self-assembly to form molecular level layers. Liquids and solutions could also be placed between the two electrode layers by placing micro- or nanoparticle insulation spacers between the two electrode structures and allowing capillary action to pull the liquids or solvents between the two electrodes. These spacers could be placed on one or both electrode surfaces, such as by dusting the surface with insulating micro- or nanoscale particles that would serve as the spacers, and then the two electrodes would be placed together. Dispersed insulating particles on the electrode surface would prevent the two electrodes from making direct contact and would leave a thin continuous void that the electrolyte could fill. Exposure of an edge of the two electrodes separated by the spacers to a liquid or solution would draw the liquid or solution into the thin void, thereby filling this space with electrolyte. The insulating spacer particles could be dispersed in the liquid or solution for placement. In this method, the solution or liquid could be placed on the electrode surface by solvent casting, spin coating or other techniques. The two electrodes would be placed together with the solvent and spacers already on one or both electrodes trapping the electrolyte between the two electrodes. Direct electrode contact would again be prevented by the spacers on the electrode surface. The liquid could be any aqueous or non-aqueous electrolyte. The solvent could contain a dissolved polymer and inorganic salts. With this solution, the solvent maybe evaporated leaving a polymer electrolyte between the two electrodes.
(28) In whatever means the thin layer of electrolyte is placed or deposited between the two electrode surfaces to complete a nanobattery system, the electrolyte will take advantage of the enhanced surface area of each electrode surface. The electrolyte will disperse itself into the fissures and crevices between the nanobasket structure, and onto the roughened nanostructure of the top surface of the nanobaskets taking advantage of the enhanced electrode surface area.
Example 1
(29) An AAO substrate is placed on the sample stage of an RF-magnetron sputtering system which is fitted with a tin oxide (SnO.sub.2) target. A chamber is filled and flushed with argon gas, and sputtering is initiated under system conditions of 0.01 mbar argon pressure and 35 watts forward power. In accordance with the generally recognized principles of sputter depositions, SnO.sub.2 is removed from the target and deposited onto the AAO substrate. Film thickness is monitored using a quartz crystal thickness monitor. When the desired thickness is reached, turning off the power halts the sputtering process.
Example 2
(30) An AAO substrate is placed on the sample stage of an RF-magnetron sputtering system which is fitted with a gold (Au) target. The chamber is filled and flushed with argon, and sputtering is initiated under system conditions of 0.01 mbar argon pressure and 35 watts forward power. In accordance with the generally recognized principles of sputter depositions, gold is removed from the target and deposited onto the AAO substrate. Film thickness is monitored using a quartz crystal thickness monitor. When the desired thickness is reached, sputtering is halted and the chamber is opened. A new target of LiCoO.sub.2 is installed. The chamber is again filled and flushed with argon, and sputtering is initiated under system conditions of 0.01 mbar argon pressure and 35 watts forward power. LiCoO.sub.2 is removed from the target and deposited onto the gold layer previously deposited on the AAO substrate. Film thickness is monitored using a quartz crystal thickness monitor. When the desired thickness is reached, turning off the power halts the sputtering process.
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Example 3
(32) A nanostructured metal substrate was formed by chemical polishing of an aluminum film in concentrated phosphoric acid for 5 minutes and then rinsed. The aluminum film was then placed into electrochemical cell with 0.3 M oxalic acid electrolyte solution at near 4 C., and a potential of 40 V was applied for 1 hour. The 40 V potential was then decreased in steps of 2 Vmin.sup.1 until the potential reached 2 V. Then, pores were widened by etching in phosphoric acid to form a nano-pitted aluminum substrate that can serve as both a growth template for nanostructured materials and as a current collector for the resulting nanostructured material.
(33) The potential factors in controlling the dimensions of the pits in the nano-pitted aluminum substrate include oxidation voltage, time of oxidation, temperature and concentration of the oxalic acid electrolyte, and the electrochemical conditions of the step-down potential oxide layer dissolution procedure.
(34) The results of the above procedure are shown in
Example 4
(35) Nanostructured films of tin oxide were deposited directly on nano-pitted aluminum substrates, such as those fabricated above in Example 3, by radio frequency (RF) magnetron sputtering from a SnO.sub.2 target in an argon atmosphere, utilizing a Cressington 208 sputter coater with Manitou power source. The pits in the aluminum substrate were approximately 200 nm in diameter and approximately 150 nm deep. Sputtering was performed at room temperature under approximately 0.01 mbar of argon pressure, with a spacing of 7 cm between the target and the sample. As can be seen in
Example 5
(36) The nanostructures disclosed herein can be utilized in photovoltaic devices 18 as shown in
Example 6
(37) A multilayered, nanostructured material could also be used to make thin film battery systems as shown in
Example 7
(38) Another battery configuration as depicted in
Example 8
(39) As shown in
(40) Whereas, the invention has been described in relation to the drawings and claims, it should be understood that other and further modifications, apart from those shown or suggested herein, may be made within the scope of the invention.