Methods for manufacturing and operating a semiconductor device

Abstract

A method for manufacturing and operating a semiconductor device is disclosed. The semiconductor device includes a first capacitor node, a second capacitor node, a first capacitor electrode, a second capacitor electrode, a first switch and a second switch. The first switch is coupled between the first capacitor electrode and the first and second capacitor nodes such that the first switch has a first position that couples the first capacitor electrode to the first capacitor node and a second position that couples the first capacitor electrode to the second capacitor node. The second switch is coupled between the second capacitor electrode and the first and second capacitor nodes such that the second switch has a first position that couples the second capacitor electrode to the first capacitor node and a second position that couples the second capacitor electrode to the second capacitor node.

Claims

1. A method for driving a capacitor in a semiconductor component, the method comprising: (a) generating a first voltage between a first node and a second node; (b) for a first period of time, applying the first voltage to the capacitor by coupling a first capacitor electrode to the first node and coupling a second capacitor electrode to the second node, such that a voltage difference between the first and second capacitor electrodes is the first voltage; (c) for a second period of time after the first period of time, applying the first voltage to the capacitor by coupling the first capacitor electrode to the second node and coupling the second capacitor electrode to the first node, such that the voltage difference between the first and second capacitor electrodes is the first voltage, wherein a first switch couples the first node to the first capacitor electrode in a first position and to the second capacitor electrode in a second position; and (d) automatically repeating steps (b) and (c).

2. The method as claimed in claim 1, wherein generating the first voltage comprises generating a pulsating DC voltage.

3. The method as claimed in claim 1, wherein a first length of the first period of time and a second length of the second period of time are controlled by a control signal.

4. The method as claimed in claim 3, wherein the control signal is generated whenever an operating voltage is applied to the semiconductor component.

5. The method as claimed in claim 3, wherein the control signal is generated from an internal clock in the semiconductor component.

6. The method as claimed in claim 1, wherein generating the first voltage comprises generating the first voltage wherein a potential at the first node is always greater than or equal to a potential at the second node.

7. The method as claimed in claim 6, wherein generating the first voltage comprises generating a DC voltage.

8. The method as claimed in claim 1, further comprising a second switch, wherein the second switch couples the second node to the first capacitor electrode in a third position and the to the second capacitor electrode in a fourth position, wherein the second switch is in the third position when the first switch is in the first position and wherein the second switch is in the fourth position when the first switch is in the second position.

9. The method as claimed in claim 1, wherein a sum of the first periods of time and a sum of the second periods of time are approximately the same.

10. A method for driving a capacitor in a semiconductor component, the method comprising: (a) generating a first voltage between a first node and a second node; (b) for a first period of time, applying the first voltage to the capacitor by coupling a first capacitor electrode to the first node and coupling a second capacitor electrode to the second node, such that a voltage difference between the first and second capacitor electrodes is the first voltage; (c) for a second period of time after the first period of time, applying the first voltage to the capacitor by coupling the first capacitor electrode to the second node and coupling the second capacitor electrode to the first node, such that the voltage difference between the first and second capacitor electrodes is the first voltage, wherein a first switch couples the first node to the first capacitor electrode in a first position and to the second capacitor electrode in a second position; and (d) directly transitioning between steps (b) and (c), and between steps (c) and (b).

11. The method as claimed in claim 10, wherein generating the first voltage comprises generating a pulsating DC voltage.

12. The method as claimed in claim 10, wherein a first length of the first period of time and a second length of the second period of time are controlled by a control signal.

13. The method as claimed in claim 12, wherein the control signal is generated whenever an operating voltage is applied to the semiconductor component.

14. The method as claimed in claim 12, wherein the control signal is generated from an internal clock in the semiconductor component.

15. The method as claimed in claim 10, wherein generating the first voltage comprises generating the first voltage wherein a potential at the first node is always greater than or equal to a potential at the second node.

16. The method as claimed in claim 15, wherein generating the first voltage comprises generating a DC voltage.

17. The method as claimed in claim 10, further comprising a second switch, wherein the second switch couples the second node to the first capacitor electrode in a third position and the to the second capacitor electrode in a fourth position, wherein the second switch is in the third position when the first switch is in the first position and wherein the second switch is in the fourth position when the first switch is in the second position.

18. The method as claimed in claim 10, wherein a magnitude of time integrals of a voltage function of the first periods of time and a magnitude of time integrals of a voltage function of the second periods of time are approximately the same.

19. A method for driving a capacitor in a semiconductor component, the method comprising: (a) determining a length of a first time period and a length of a second time period; (b) applying a first voltage between a first node and a second node; (c) during the first time period, applying the first voltage to the capacitor by using a first switch in a first position to couple a first capacitor electrode to the first node, and using a second switch in a third position to couple a second capacitor electrode to the second node; (d) during the second time period, applying the first voltage to the capacitor by using the first switch in a second position to couple the first capacitor electrode to the second node, and using the second switch in a fourth position to couple the second capacitor electrode to the first node; and (e) repeating steps (c) and (d).

20. The method of claim 19, wherein determining the length of the first time period and the length of the second time period comprises: determining a first magnitude of a time integral of a function of the first voltage across the capacitor for the first time period; determining a second magnitude of the time integral of a function of the first voltage across the capacitor for the second time period; and setting the first time period and the second time period to substantially equalize the first magnitude and the second magnitude.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) The invention shall be explained in more detail below with reference to two exemplary embodiments. In the associated drawings:

(2) FIG. 1 shows an inventive distribution of the polarity of the capacitor voltage;

(3) FIG. 2 shows an inventive distribution of the polarity of the capacitor voltage as a pulsating DC voltage; and

(4) FIG. 3 shows a capacitor circuit arrangement according to the invention.

(5) The following list of reference symbols can be used in conjunction with the figures:

(6) 1 Capacitor

(7) 2 Changeover arrangement

(8) 3 First input

(9) 4 Second input

(10) 5 First switch

(11) 6 Second switch

(12) 7 Control line

(13) 8 First output

(14) 9 Second output

(15) N Event

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

(16) As illustrated in the drawings, the polarity at the capacitor 1 changes as a result of a regular event N, which can be selected depending on the application. The event N is formed by applying the operating voltage to the semiconductor component or by an internally generated clock.

(17) In this exemplary embodiment, the capacitor comprises two TiN electrodes and an SiN dielectric, which is surrounded by the electrodes.

(18) FIG. 3 illustrates a changeover arrangement 2 that is implemented using conventional components and is intended to reverse the polarity at the capacitor 1. The capacitor circuit arrangement includes a first input 3 and a second input 4 as well as a changeover arrangement 2 that contains a first switch 5 and a second switch 6. Both switches can be electronically controlled using a control line 7. The changeover arrangement 2 has a first output 8 and a second output 9 which equally constitute the inputs of the capacitor 1.

(19) If a control signal that is triggered by an event N is applied to the control line 7, the switches 5 and 6 are operated and the connections between the first input 3 and the first output 8 and between the second input 4 and the second output 9 are mutually interchanged. Depending on the signal applied and on the basis of the event N, capacitor voltage profiles as illustrated in FIG. 1 or FIG. 2 thus result.

(20) The effect achieved in this case is that it becomes possible to now operate a capacitor, which has previously been operated in a purely unipolar manner, in a bipolar manner using a change in polarity and thus to significantly extend the lifetime of the capacitor.

(21) In order to make optimum use of the effect to extend the lifetime of the capacitor, the stress levels of both polarities should compensate for each other.

(22) For applications in which the capacitor is operated using a DC voltage, it is, therefore, necessary for the cumulated time during which the capacitor is operated with the first polarity to be approximately equal to the cumulated time during which the capacitor is operated with the second polarity. This type of application is preferred for use of the invention.

(23) For applications in which the capacitor is operated using a voltage that varies over time, the time integral from the product of time and a suitable function of the voltage must be approximately compensated for with both polarities.

(24) In order to carry out the method according to the invention, the originally applied capacitor voltage may be both a constant DC voltage and/or a pulsating DC voltage. The method can thus be applied to all capacitors that are operated in a unipolar manner.

(25) In order to achieve the desired effect, the first and second periods of time may be seconds to weeks.

(26) In another variant of the method according to the invention, the changeover arrangement is driven using a control signal. This has the advantage of possible automation of the changes in polarity of the capacitor voltage. It is possible to use the application of the operating voltage to the semiconductor component as the control signal. It is also possible to use an internally generated clock as the control signal. The advantage of one of these two embodiments of the method is that the polarity of the capacitor voltage is changed over in a completely automatic manner.

(27) The considerable extension of the lifetime of the capacitor, which is achieved by means of the invention, can be used to increase the reliability and lifetime of the capacitor and thus of the overall semiconductor component. On the other hand, it is possible to reduce the thickness of the dielectric, which is required for a desired lifetime, and thus to reduce the space required by the capacitor in the semiconductor component.